KR20160116185A

KR20160116185A - Semiconductor test socket and manufacturing method thereof

Info

Publication number: KR20160116185A
Application number: KR1020150042576A
Authority: KR
Inventors: 이은주
Original assignee: 주식회사 이노글로벌
Priority date: 2015-03-26
Filing date: 2015-03-26
Publication date: 2016-10-07
Also published as: KR101694768B1

Abstract

The present invention relates to a semiconductor test socket and a method of manufacturing the same. A semiconductor test socket according to the present invention comprises: an insulating main body having elasticity; An insulating sheet disposed in the insulating body so as to be spaced apart from each other in the transverse direction; A plurality of conductive patterns spaced apart from each other along a depth direction on one surface of each of the insulating sheets; A plurality of upper conductive pins each having one side attached to an upper edge region of each of the conductive patterns and the other side exposed to an upper surface of the insulating body; And a ground sheet which is attached to a central region in a vertical direction on the other surface of the insulating sheet and which is formed along the depth direction and which can be electrically grounded. Accordingly, the disadvantages of the pogo-pin type semiconductor test socket and the disadvantages of the PCR socket type semiconductor test socket can be overcome, so that it is possible to overcome the thickness limitation in the up and down direction while implementing the fine pattern. In addition, in manufacturing semiconductor test sockets, it is possible to improve the accuracy of testing by realizing more efficient grounding in the actual semiconductor testing process while providing convenience of manufacturing.

Description

TECHNICAL FIELD [0001] The present invention relates to a semiconductor test socket,

The present invention relates to a semiconductor test socket and a method of manufacturing the same, and more particularly, to a semiconductor test socket and a semiconductor test socket which can overcome the disadvantages of the pogo-pin type semiconductor test socket and the disadvantages of the PCR socket type semiconductor test socket And a manufacturing method thereof.

The semiconductor device is subjected to a manufacturing process and then an inspection for judging whether the electrical performance is good or not. Inspection is carried out with a semiconductor test socket (or a connector or a connector) formed so as to be in electrical contact with a terminal of a semiconductor element inserted between a semiconductor element and an inspection circuit board. Semiconductor test sockets are used in burn-in testing process of semiconductor devices in addition to final semiconductor testing of semiconductor devices.

The size and spacing of terminals or leads of semiconductor devices are becoming finer in accordance with the development of technology for integrating semiconductor devices and miniaturization trends and there is a demand for a method of finely forming spaces between conductive patterns of test sockets. Therefore, conventional Pogo-pin type semiconductor test sockets have a limitation in manufacturing semiconductor test sockets for testing integrated semiconductor devices.

A technique proposed to be compatible with the integration of such semiconductor devices is to form a perforated pattern in a vertical direction on a silicon body made of a silicone material made of an elastic material and then to fill the perforated pattern with a conductive powder to form a conductive pattern PCR socket type is widely used.

1 is a cross-sectional view of a conventional semiconductor test apparatus 1 of PCR socket type. Referring to FIG. 1, a conventional semiconductor testing apparatus 1 includes a support plate 30 and a semiconductor test socket 10 of PCR socket type.

The support plate 30 supports the semiconductor test socket 10 when the semiconductor test socket 10 moves between the semiconductor element 3 and the test circuit board 5. [ Here, a main through hole (not shown) for the advance and retreat guide is formed at the center of the support plate 30, and the through holes for coupling are spaced apart from each other along the edge forming the main through hole . The semiconductor test socket 10 is fixed to the support plate 30 by a peripheral support portion 50 joined to the upper and lower surfaces of the support plate 30.

The PCR socket type semiconductor test socket 10 has a perforated pattern formed on an insulating silicon body and conductive patterns are formed in the vertical direction by the conductive powder 11 filled in the perforated pattern.

The PCR socket has the advantage of being capable of realizing fine pitches. However, since the conductive powder 11 filled in the perforation pattern is caused by the pressure generated when the semiconductor element 3 is in contact with the inspection circuit board 5 There is a disadvantage in that it is restricted in the thickness formation in the vertical direction.

That is, the conductive powders 11 are brought into contact with each other by the pressure in the vertical direction, so that the conductivity is formed. When the thickness is increased, the pressure to be transmitted to the inside of the conductive powder 11 becomes weak, and conductivity may not be formed. Therefore, the PCR socket has a disadvantage in that the thickness of the PCR socket is restricted in the vertical direction.

SUMMARY OF THE INVENTION Accordingly, the present invention has been made in order to solve the above problems, and it is an object of the present invention to overcome the disadvantages of the pogo-pin type semiconductor test socket and the disadvantage of the PCR socket type semiconductor test socket, The present invention also provides a method of manufacturing a semiconductor test socket.

In addition, it is another object of the present invention to provide a semiconductor test socket capable of enhancing the accuracy of testing by realizing more efficient grounding in a semiconductor test process while providing convenience in manufacturing semiconductor test socket. .

According to the present invention, the above objects can be accomplished by providing an insulating main body having elasticity; An insulating sheet disposed in the insulating body so as to be spaced apart from each other in the transverse direction; A plurality of conductive patterns spaced apart from each other along a depth direction on one surface of each of the insulating sheets; A plurality of upper conductive pins each having one side attached to an upper edge region of each of the conductive patterns and the other side exposed to an upper surface of the insulating body; And a ground sheet made of an electrically groundable material attached to a central region in a vertical direction on the other surface of the insulating sheet and formed along the depth direction.

The conductive pin may further include a plurality of lower conductive pins, one side of which is attached to the lower edge region of each conductive pattern and the other side of which is exposed to the lower surface of the insulating main body.

The insulating sheet and the conductive pattern may have a shape in which the central region in the up and down direction is curved in the transverse direction about the central axis.

Further, the insulating sheet and the conductive pattern have a shape which is convexly curved in a direction in which the conductive pattern of the insulating sheet is formed; The ground sheet may be adhered to the insulating sheet so as to be located inside the partially bent region of the insulating sheet.

The insulating sheet may include an upper cut-out portion formed by cutting a predetermined length in a downward direction from an upper end of the insulating sheet, between the adjacent upper conductive pins; And a lower cut-out portion formed by cutting a predetermined length in a direction upward from a lower end of the insulating sheet between adjacent lower conductive fins.

The insulating sheet is provided in the form of a PI film; Each of the conductive patterns includes a base conductive layer formed by patterning the conductive layer of a flexible circuit board having a conductive layer formed on one side of the PI film, and a nickel plating layer and a gold plating layer sequentially coated on the base conductive layer can do.

The ground sheet may be made of stainless steel or FR-4.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor test socket, including: forming a plurality of conductive patterns spaced apart from each other along a depth direction on a surface of an insulating sheet; A pin attaching step of attaching an upper conductive pin to a top edge surface of each of the conductive patterns; A unit sheet forming step of forming a unit sheet by attaching a ground sheet made of an electrically groundable material along the depth direction to a central region in a vertical direction on the other surface of the insulating sheet; Forming an insulating main body such that a plurality of unit sheets formed through the pattern forming step, the fin forming step, and the unit sheet forming step are arranged to be spaced apart from each other along the transverse direction, And a main body forming step of forming the insulating main body so as to be exposed to an upper portion of the semiconductor test socket.

Wherein the fin forming step further comprises attaching a lower conductive pin to a lower edge surface of each of the conductive patterns; In the body forming step, the insulating main body may be formed such that a lower portion of the lower conductive pin is exposed to a lower portion of the insulating main body.

The conductive sheet may further include a bending forming step of bending the central region in the vertical direction of the insulating sheet and the conductive pattern to the center axis in the transverse direction.

In the bending forming step, the insulating sheet and the conductive pattern may be convex in a direction in which the conductive pattern of the insulating sheet is formed.

And, in the unit sheet forming step, the ground sheet may be adhered to the insulating sheet so as to be located inside the unexpectedly curved region of the insulating sheet.

Cutting the insulating sheet at a predetermined length in a downward direction from an upper end of the insulating sheet to form an upper cutout portion between adjacent upper conductive fins; Forming a lower cutout portion by cutting a predetermined length from the lower end of the insulating sheet in an upper direction between the adjacent lower conductive fins, respectively.

The body forming step may include forming a unit body of an insulating material on both lateral sides of one unit sheet, wherein an upper portion of the upper conductive pin and a lower portion of the lower conductive pin are exposed to upper and lower portions of the unit body, And a module attaching step of sequentially attaching the plurality of unit modules in the transverse direction; The insulating main body may be formed by the unit bodies constituting the plurality of unit modules sequentially attached in the lateral direction.

At least one through hole penetrating in the transverse direction is formed in both side edge regions in the depth direction of the ground sheet; Wherein the unit body is formed such that the through holes of the ground sheet are exposed on both sides of the unit body in the lateral direction in the module manufacturing step; In the module attaching step, the plurality of unit modules may be sequentially attached while the through holes formed on both sides of the ground sheet are inserted into the transversely extending connecting rods.

The ground sheet may be made of stainless steel or FR-4.

In the pattern formation step, the conductive layer of the flexible circuit board on which the conductive layer is formed on one surface of the PI film is patterned to form the insulating sheet with the PI film, Forming a base conductive layer on the base substrate; Forming a nickel plating layer on the base conductive layer by nickel plating; And forming a gold plating layer on the nickel plating layer to form the conductive pattern.

According to the present invention, the disadvantages of the pogo-pin type semiconductor test socket and the disadvantage of the PCR socket-type semiconductor test socket can be overcome to realize a fine pattern, A semiconductor test socket capable of overcoming the limitations and a manufacturing method thereof are provided.

In addition, in manufacturing semiconductor test sockets, it is possible to improve the accuracy of testing by realizing more efficient grounding in the actual semiconductor testing process while providing convenience of manufacturing.

1 is a cross-sectional view of a semiconductor test apparatus to which a conventional PCR socket is applied,
2 is a perspective view of a semiconductor test socket according to the present invention,
3 is a sectional view taken along the line III-III in Fig. 2,
4 to 9 are views for explaining a method of manufacturing a semiconductor test socket according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the embodiments according to the present invention, the overall configuration of a semiconductor test apparatus will be described with reference to FIG. 1, and corresponding elements will be described using the same reference numerals even if the embodiments are different, Can be omitted.

FIG. 2 is a perspective view of a semiconductor test socket 100 according to the present invention, and FIG. 3 is a sectional view taken along a line III-III in FIG. 2 and 3, a semiconductor test socket 100 according to the present invention includes an insulating sheet 310, a plurality of conductive patterns 320, a plurality of upper conductive pins 331 and a ground sheet 340, . In addition, the semiconductor test socket 100 according to the present invention may include a plurality of lower conductive pins 332.

The insulating main body 200 forms an overall appearance of the semiconductor test socket 100 according to the present invention and is made of an elastic material. In the present invention, it is assumed that the insulating main body 200 is made of a silicone material having an elastic material.

Here, in the present invention, the unit bodies 210 constituting the unit module 110 to be described later are attached to each other in the lateral direction to form the entire insulating main body 200, which will be described in detail later.

The insulating sheet 310 is arranged inside the insulating main body 200 so as to be spaced apart from each other along the transverse direction. In the present invention, it is exemplified that the insulating sheet 310 is provided in the form of a PI film.

A plurality of conductive patterns 320 are formed on one surface of each insulating sheet 310 so as to be spaced from each other along the depth direction (see FIG. 7). At this time, the conductive patterns 320 are spaced apart from each other to be electrically isolated from each other. In the present invention, the insulating sheet 310 and the plurality of conductive patterns 320 are formed through patterning of the flexible circuit board, and a detailed description thereof will be described later.

On the other hand, the upper conductive pins 331 are attached to the conductive patterns 320 one by one. More specifically, one side of the upper conductive pin 331, that is, the lower region is attached to the upper edge region of the conductive pattern 320, and the other side region of the upper conductive pin 331 is shown in FIGS. 2 and 3 Is exposed to the upper surface of the insulating body 200, as shown. 2, the upper conductive pins 331 exposed on the upper surface of the insulating main body 200 are arranged so as to be spaced apart from each other in the depth direction corresponding to the shape of the conductive pattern 320 .

Likewise, the lower conductive pin 332 is attached to each conductive pattern 320 one by one. More specifically, one side or upper region of the lower conductive pin 332 is attached to the lower edge region of the conductive pattern 320, and the other side region of the lower conductive pin 332 is shown in FIGS. 2 and 3 Is exposed to the lower surface of the insulating body 200, as shown. Here, the lower conductive pins 332 exposed on the lower surface of the insulating main body 200 are arranged so as to be spaced apart from each other in the depth direction corresponding to the shape of the conductive pattern 320, as shown in FIG. 2 .

The upper conductive pin 331, the conductive pattern 320 and the lower conductive pin 332 form a conductive line in the vertical direction, And a plurality of insulating sheets 310 are arranged in the lateral direction, so that the semiconductor test socket 100 according to the present invention can be formed.

Here, the ground sheet 340 is attached to the central region in the vertical direction on the other surface of each insulating sheet 310, that is, on the surface opposite to the surface on which the conductive pattern 320 is formed among the both lateral surfaces of the insulating sheet 310 And has a sheet shape formed along the depth direction. Here, the ground sheet 340 is made of an electrically groundable material, and may be made of, for example, stainless steel or FR-4 material.

As described above, since the ground sheet 340 is formed so as to be close to the electrically conductive line through which the electrically conductive electricity flows and the insulating sheet 310 made of the insulating material, the flow of the test signal through the conductive line is smooth, A more accurate test of the test apparatus 100 becomes possible.

3, the insulating sheet 310 and the conductive pattern 320 according to the present invention are formed in a central region in the up and down direction, that is, between the upper conductive pin 331 and the lower conductive pin 332 The area may be provided so as to have a shape in which the horizontal direction is curved toward the central axis.

Accordingly, when a pressure is applied to the semiconductor test socket 100 by the semiconductor element 3 in the process of inspecting the semiconductor element 3 using the semiconductor test socket 100 according to the present invention, The conductive pattern 320 and the conductive pattern 320 may be elastically pressed while being bent inward to minimize damage to the ball or terminal of the conductive pattern 320 or the semiconductor element 3 .

3, the insulating sheet 310 and the conductive pattern 320 are convex in a direction in which the conductive pattern 320 of the insulating sheet 310 is formed, May be provided so as to have a concave curved shape. Then, the ground sheet 340 can be attached to the insulating sheet 310 such that the insulating sheet 310 is located inside the area where the insulating sheet 310 is in an unintentionally bent region.

According to the above configuration, the semiconductor test socket 100 according to the present invention can be manufactured by forming the conductive patterns 320 in the insulating sheet 310 to form the conductive lines in the vertical direction and to have the fin shape, The limitation of the pitch of the pin type semiconductor test socket 100 and the disadvantage of the PCR socket type semiconductor test socket 100, that is, the limitation of the thickness in the up and down direction, There is provided a semiconductor test socket 100 capable of overcoming the thickness limitation in the up and down direction while being capable of being implemented, and a method of manufacturing the same.

In addition, in manufacturing semiconductor test socket 100, it is possible to improve the accuracy of testing by realizing more efficient grounding in actual semiconductor testing process, while providing convenience of manufacturing.

Hereinafter, a method of manufacturing the semiconductor test socket 100 according to the present invention will be described with reference to FIGS. 4 to 9. FIG.

First, a plurality of conductive patterns 320 spaced from each other along the depth direction is formed on one surface of the insulating sheet 310. In the present invention, a plurality of conductive patterns 320 are formed on the insulating sheet 310 using the flexible circuit board 311 having the conductive layer 320a formed on one surface of the PI film.

Referring to FIG. 4, a flexible circuit board 311 having a conductive layer 320a formed on one surface of a PI film is prepared as shown in FIG. 4 (a). Then, the conductive layer 320a is patterned by using a mask to form a base conductive layer 320b corresponding to the conductive pattern 320 on the PI film, as shown in Fig. 4 (a). Here, the PI film becomes the insulating sheet 310 according to the present invention, and the conductive pattern 320 according to the present invention of the base conductive layer 320b is formed.

In the present invention, in forming the conductive pattern 320, the base conductive layer 320b is plated with nickel to form a nickel plated layer, and the plated nickel layer is plated with gold to form gold plating to finally form the conductive pattern 320 For example.

As described above, when the conductive pattern 320 is formed on the insulating sheet 310, the upper conductive pin 331 is attached to the upper edge surface of each conductive pattern 320, as shown in FIG. Further, a lower conductive pin 332 is attached to the lower edge surface of each conductive pattern 320. [ The attachment of the upper conductive pin 331 and the lower conductive pin 332 may be accomplished by soldering or by using a conductive adhesive, or by other methods of electrically bonding conductive materials.

When the upper conductive pin 331 and the lower conductive pin 332 are attached to each other, the ground sheet 340 is attached to the opposite surface of the insulating sheet 310 on the opposite side of the surface on which the conductive pattern 320 is formed . In the present invention, as shown in FIG. 6, the process of bending the insulating sheet 310 and the conductive pattern 320 before attaching the ground sheet 340 proceeds first.

6, when the insulating sheet 310 with the upper conductive pin 331 and the lower conductive pin 332 is seated on the press (see FIG. 6A) and the central region is pressed The center region of the insulating sheet 310 and the conductive pattern 320 is bent as shown in FIG. 6 (b).

In this case, the deflection direction in the present invention is exemplified as the deflection in the direction in which the surface side of the insulating sheet 310 on which the conductive pattern 320 is formed is convex and the opposite side is concave, as described above.

Then, the ground sheet 340 is attached to the inside of the concave curved region of the insulating sheet 310, that is, the surface opposite to the surface on which the conductive pattern 320 is formed, as shown in FIG. 6C .

5, the insulating sheet 310 is formed by cutting a predetermined length of the insulating sheet 310 in the downward direction from the upper end of the insulating sheet 310, between the adjacent upper conductive pins 331, (312). The insulating sheet 310 may include a lower cut-out portion formed by cutting a predetermined length from the lower end of the insulating sheet 310 in the upper direction between the adjacent lower conductive pins 332.

In this way, both ends are cut off in one conductive line unit constituted by the upper conductive pin 331, the conductive pattern 320 and the lower conductive pin 332, so that in the test process of the semiconductor element 3, Can be independently moved without affecting the other conductive lines by the upper cut-out portion 312 or the lower cut-out portion.

The process of forming the upper cutout portion 312 and the lower cutout portion may be performed before or after the attachment of the upper conductive pin 331 and the lower conductive pin 332 in the stage before the unit body 210 to be described later is formed Can be carried out in suitable steps.

7, the conductive pattern 320, the upper conductive pin 331, the lower conductive pin 332, the upper cut-out portion 312, and the lower conductive pin 332 are formed on one insulating sheet 310, And a unit sheet 300 is formed in a state in which the insulating sheet 310 is bent.

When one unit sheet 300 is formed as described above, a unit body 210 made of an insulating material is formed on the unit sheet 300 using a metal mold, as shown in FIG. 8, the upper and lower conductive pins 331 and 332 may be formed of a unit body 210 of insulating material on both sides of one unit sheet 300 in the transverse direction. In this case, The unit main body 210 is formed such that the lower portions of the unit main body 332 are exposed to the upper and lower portions of the unit main body 210. Finally, one unit module 110 shown in FIG.

As described above, a plurality of unit modules 110 are manufactured through the above process, and a plurality of unit modules 110 are sequentially attached in the lateral direction as shown in FIG. 9, The test socket 100 is produced. At this time, the insulating main body 200 is formed by unit bodies 210 constituting each of a plurality of unit modules 110 sequentially attached in the lateral direction.

Here, as shown in FIG. 8, at least one through hole 341a penetrating in the transverse direction may be formed in both side edge regions of the ground sheet 340 in the depth direction. In FIG. 8, one through hole 341a is formed on both sides in the transverse direction. When the unit body 210 is formed on the ground sheet 340, the unit body 210 is formed such that the through holes 341a formed in the ground sheet 340 are exposed on both sides of the unit body 210 in the transverse direction .

9, the plurality of unit modules 110 may be sequentially attached while the through holes 341a formed on both sides of the ground sheet are inserted into the laterally extending connecting rods as shown in FIG. Accordingly, the ground sheet 340 added for the function of the ground can also serve as a guide for smooth attachment of the unit modules 110 in the manufacturing process of the semiconductor test socket 100 according to the present invention, It is possible to improve the grounding function at the same time while improving manufacturing convenience.

In the above-described embodiment, the configuration in which the terminals of the inspection circuit board 3 are in contact with the terminals of the semiconductor test socket 100 is composed of the lower conductive pins 332. However, May be provided in other forms. In addition, although a lower perforated line is formed in the lower portion of the insulating sheet 310, the formation of the perforated line may be selectively applied depending on the configuration of contacting the terminal of the test circuit board 3.

Although several embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various modifications may be made without departing from the spirit or scope of the present invention . The scope of the invention will be determined by the appended claims and their equivalents.

100: Semiconductor test socket 110: Unit module
200: insulative body 210: unit body
300: unit sheet 310: insulating sheet
311: Flexible circuit board 312: Upper cut-
313: Lower cut-out portion 320: Conductive pattern
331: upper conductive pin 332: lower conductive pin
340: ground sheet

Claims

An insulating main body having elasticity;
An insulating sheet disposed in the insulating body so as to be spaced apart from each other in the transverse direction;
A plurality of conductive patterns spaced apart from each other along a depth direction on one surface of each of the insulating sheets;
A plurality of upper conductive pins each having one side attached to an upper edge region of each of the conductive patterns and the other side exposed to an upper surface of the insulating body;
And an electrically groundable ground sheet attached to a central region in a vertical direction on the other surface of the insulating sheet and formed along the depth direction.

The method according to claim 1,
Further comprising a plurality of lower conductive pins, one side of which is attached to the lower edge region of each of the conductive patterns, and the other side of which is exposed to the lower surface of the insulating main body.

3. The method of claim 2,
The insulating sheet and the conductive pattern
And the central region in the up-and-down direction has a shape bent toward the center axis in the lateral direction.

The method of claim 3,
Wherein the insulating sheet and the conductive pattern are convexly curved in a direction in which the conductive pattern of the insulating sheet is formed;
Wherein the ground sheet is attached to the insulating sheet such that the ground sheet is located inside the loosely curved region of the insulating sheet.

3. The method of claim 2,
The insulating sheet
An upper cut-out portion formed by cutting a predetermined length in a downward direction from an upper end of the insulating sheet in each of the adjacent upper conductive fins;
And a lower cut-out portion formed by cutting a predetermined length in a direction upward from a lower end of the insulating sheet between adjacent lower conductive fins.

The method according to claim 1,
The insulating sheet is provided in the form of a PI film;
Each of the conductive patterns
A base conductive layer formed by patterning the conductive layer of the flexible circuit board having a conductive layer formed on one side of the PI film;
And a nickel plating layer and a gold plating layer which are sequentially plated on the base conductive layer.

The method according to claim 1,
Wherein the ground sheet is made of stainless steel or FR-4 material.

A method of manufacturing a semiconductor test socket,
Forming a plurality of conductive patterns spaced apart from each other along the depth direction on one surface of the insulating sheet;
A pin attaching step of attaching an upper conductive pin to a top edge surface of each of the conductive patterns;
A unit sheet forming step of forming a unit sheet by attaching a ground sheet made of an electrically groundable material along the depth direction to a central region in a vertical direction on the other surface of the insulating sheet;
Forming an insulating main body such that a plurality of unit sheets formed through the pattern forming step, the fin forming step, and the unit sheet forming step are arranged to be spaced apart from each other along the transverse direction, And forming the insulating main body so as to be exposed to an upper portion of the semiconductor test socket.

9. The method of claim 8,
The fin forming step further comprises attaching a lower conductive pin to a lower edge surface of each of the conductive patterns;
Wherein the insulating main body is formed such that a lower portion of the lower conductive pin is exposed to a lower portion of the insulating main body in the main body forming step.

10. The method of claim 9,
Further comprising a bending forming step of bending the central region in the vertical direction of the insulating sheet and the conductive pattern to a center axis in the transverse direction.

11. The method of claim 10,
In the bending formation step
Wherein the insulating sheet and the conductive pattern are bent so as to be convex in a direction in which the conductive pattern of the insulating sheet is formed.

12. The method of claim 11,
Wherein in the unit sheet forming step, the ground sheet is attached to the insulating sheet such that the ground sheet is located inside the unfavorably curved region of the insulating sheet.

10. The method of claim 9,
Cutting the insulating sheet at a predetermined length in a downward direction from an upper end of each of the adjacent upper conductive pins to form an upper cut-out portion;
Forming a lower cut-out portion by cutting a predetermined length in an upper direction from a lower end of the insulating sheet in each of the adjacent lower conductive fins

10. The method of claim 9,
The body forming step
The unit main body is formed such that an upper portion of the upper conductive pin and a lower portion of the lower conductive pin are respectively exposed to upper and lower portions of the unit body, A module manufacturing step of manufacturing a unit module,
And a module attaching step of sequentially attaching the plurality of unit modules in the transverse direction;
Wherein the insulating main body is formed by the unit bodies constituting the plurality of unit modules sequentially attached in the lateral direction.

15. The method of claim 14,
Wherein at least one through hole penetrating in the transverse direction is formed in both side edge regions in the depth direction of the ground sheet;
Wherein the unit body is formed such that the through holes of the ground sheet are exposed on both sides of the unit body in the lateral direction in the module manufacturing step;
Wherein the plurality of unit modules are sequentially attached while the through holes formed on both sides of the ground sheet are inserted into the transversely extending connecting rods in the module attaching step.

9. The method of claim 8,
Wherein the ground sheet is made of stainless steel or FR-4 material.

9. The method of claim 8,
The pattern forming step
The conductive layer of the flexible circuit board on which the conductive layer is formed on one surface of the PI film is patterned to form the insulating sheet with the PI film and a base conductive layer corresponding to the conductive pattern is formed on the insulating sheet ;
Forming a nickel plating layer on the base conductive layer by nickel plating;
And forming a gold plating layer by gold plating the nickel plating layer to form the conductive pattern.