TWI699460B - 電解鍍敷裝置及電解鍍敷方法 - Google Patents
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- 238000009713 electroplating Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 164
- 238000007789 sealing Methods 0.000 claims abstract description 85
- 238000007747 plating Methods 0.000 claims abstract description 65
- 238000003825 pressing Methods 0.000 claims abstract description 33
- 230000002093 peripheral effect Effects 0.000 claims abstract description 17
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Abstract
本發明之一態樣提供一種可將密封部件與接觸部件配置於最佳場所,且可個別地調整密封部件與接觸部件之按壓之電解鍍敷裝置及電解鍍敷方法。 實施形態之電解鍍敷裝置具備:鍍敷槽,其可填充鍍敷液;密封部件,其配置於被處理基板之被處理面之周緣部,於將被處理基板浸漬於鍍敷槽時,將鍍敷液密封於被處理面之中央側;以及接觸部件,其係與密封部件獨立地設置,於較密封部件更靠被處理基板之周緣部側進行對被處理面之電性導通;密封部件賦予被處理基板之按壓力、與接觸部件賦予被處理基板之按壓力係可分別獨立地調整。
Description
本發明之實施形態係關於一種電解鍍敷裝置及電解鍍敷方法。
於半導體裝置用之電解鍍敷裝置中,需要應對各種材料之基板。作為具體之基板之材料,例如考慮有矽、玻璃、化合物半導體等。又,亦有對貼合複數個基板之基板進行鍍敷之狀況。
於電解鍍敷裝置中,為將半導體基板浸漬於鍍敷槽,需要設置密封部件,以使鍍敷液不會浸入多餘之部位。通常係將密封部件配置於經圖案化之抗蝕劑層之上,並使接地電位用之接觸部件接觸低電阻之金屬晶種層。
然而,密封部件之按壓最佳值係根據抗蝕劑之材料、膜厚、圖案開口率即接觸面積而大幅變化。若密封部件之按壓過高,則有晶圓黏在密封部件上,導致晶圓裂開之虞。又,若接觸部件之按壓過高,則有半導體基板出現缺口、或產生龜裂之虞。
電解鍍敷裝置中之密封部件及接觸部件大多係以一體成形之構造體形式提供,難以個別地控制密封部件與接觸部件之壓力。
又,作為進行鍍敷之對象之半導體基板即晶圓若邊緣被切去,則接觸部件接觸晶圓之邊緣部分時,有無法充分確保接觸面積之虞。如此,若密封部件與接觸部件一體成形,則無法將密封部件及接觸部件分別配置於獨立之場所,因此密封部件與接觸部件之配置場所產生限制。
本發明之一態樣提供一種可將密封部件與接觸部件配置於最佳場所、且可個別地調整密封部件與接觸部件之按壓之電解鍍敷裝置及電解鍍敷方法。
根據本實施形態,提供一種電解鍍敷裝置,其具備:鍍敷槽,其可填充鍍敷液; 密封部件,其配置於被處理基板之被處理面之周緣部,於上述被處理基板被浸漬於上述鍍敷槽時,將上述鍍敷液密封於上述被處理面之中央側;以及 接觸部件,其係與上述密封部件獨立地設置,於較上述密封部件更靠上述被處理基板之周緣部側進行對上述被處理面之電性導通; 上述密封部件賦予上述被處理基板之按壓力、與上述接觸部件賦予上述被處理基板之按壓力係可分別獨立地調整。
以下,參照圖式對本發明之一實施形態進行說明。再者,本件說明書添附之圖式中,為了便於圖示及理解,適當地將比例尺及縱橫尺寸比等,自實物進行變更而予以誇張描繪。
進而,關於本說明書中使用之特定形狀、幾何學條件以及其等之程度之例如「平行」、「正交」、「相同」等用語、長度、角度之值等,並不限制為嚴格之含義,應包含能獲得相同功能之程度之範圍而進行理解。
圖1係表示一實施形態之電解鍍敷裝置1之要部之剖視圖。圖1之電解鍍敷裝置1具備被處理基板支持部2、鍍敷槽3、及移動機構4。被處理基板支持部2係對作為鍍敷對象之被處理基板5進行支持者,其係本實施形態之特徵部分,故而詳細說明將於下文進行敍述。
被處理基板支持部2係於移動機構4之移動控制之下,經由閘閥14而進行對電解鍍敷裝置1之搬入及搬出。鍍敷槽3係上端側開口之圓筒形之容器。於鍍敷槽3之大致中央部,沿鉛直方向配置有噴出鍍敷液3a之噴出管6。再者,於圖1中,將圖示之垂直方向設為鉛直方向、即鍍敷槽3之液面之法線方向(深度方向),將圖示之水平方向設為鍍敷槽3之液面方向。該噴出管6之前端部係設置於鍍敷槽3之深度方向之中間附近。於噴出管6之周圍,配置有大致圓板狀之陽極電極7。將陽極電極7溶解時產生之Cu離子供給至鍍敷液3a中,藉此將鍍敷液3a中之Cu離子濃度維持為大致固定。
於陽極電極7施加有特定之電壓,藉此,於陽極電極7、與藉由後述接觸部件23被設定為接地電位之被處理基板5之間形成電場。
鍍敷槽3係藉由間隔壁8而被隔開。該間隔壁8之內周側連接於噴出管6之前端部,外周側連接於鍍敷槽3之內壁。經間隔壁8隔開之上側係自噴出管6被供給鍍敷液3a。經間隔壁8隔開之下側係自循環配管9被供給鍍敷液3a。間隔壁8使離子透過,但不使陽極電極7溶解時產生之雜質、鍍敷處理中產生之氧氣、氫氣等之泡透過。
於鍍敷槽3之底面側設置有循環配管9。該等循環配管9使用未圖示之泵,於鍍敷槽3之較間隔壁8更下側之區域,使鍍敷液3a循環。於包圍鍍敷槽3之周圍之外槽10之底部,設置有2個排出口11。於該等排出口11連接有配管12。該配管12與噴出管6之間配置有泵13。泵13係將未圖示之罐內之鍍敷液3a通過配管12供給至鍍敷槽3。
圖1所示之鍍敷槽3之構造為一例,本實施形態之電解鍍敷裝置1可應用於任意構造之鍍敷槽3。
被處理基板支持部2如後述般係以使密封部件21接觸被處理基板5,且利用接觸部件23將被處理面5a設定為接地電位之狀態對被處理基板5進行支持。於被處理基板支持部2連接有移動機構4。移動機構4具有使被處理基板5沿著鍍敷槽3之液面之法線方向移動之功能、及使被處理基板5沿著鍍敷槽3之液面之方向移動之功能。
此處,所謂密封部件21,係指以下部件:其配置於被處理基板5之被處理面5a之周緣部,於被處理基板5被浸漬於鍍敷槽3時,將鍍敷液3a密封於被處理面5a之中央側。又,所謂接觸部件23,係指以下部件:與密封部件21獨立地設置,於較密封部件21更靠被處理基板5之周緣部側進行對被處理面5a之電性導通。接觸部件23於較密封部件21更靠被處理基板5之周緣部側接觸被處理基板5、或者接觸支持被處理基板5之支持基板20。
接觸部件23接觸被處理基板5或者支持基板20之部位之被處理面5a之法線方向之高度、及密封部件21接觸被處理基板5之部位之被處理面5a之法線方向之高度係獨立地被控制。接觸部件23接觸被處理基板5之與被處理面5a相連之側方之第1端面、與被處理面5a為相反側之第2端面、支持被處理基板5之支持基板20之側方之第3端面、及與支持基板20之被處理基板5之接觸面為相反側之第4端面中之至少一者。密封部件21對被處理基板5賦予之按壓力、與接觸部件23對被處理基板5或者支持基板20賦予之按壓力係分別獨立地控制。
如後所述,接觸部件23亦可於第1至第4端面中之至少一者分別相隔開而於複數個部位連接。又,於複數個部位之各者,接觸部件23對被處理基板5賦予之按壓力亦可分別獨立地被控制。接觸部件23接觸被處理基板5或者支持基板20之部位之被處理面5a之法線方向之高度、及密封部件21接觸被處理基板5之部位之被處理面5a之法線方向之高度亦可於複數個部位之各者獨立地被控制。
圖2係表示被處理基板支持部2之詳細構造之圖。圖2之被處理基板支持部2係表示具備對被處理基板5進行支持之支持基板20之例。為實現微細化而於被處理基板5形成Si貫通電極(TSV:Through Silicon Via)時,需要藉由研磨處理將被處理基板5薄膜化,故而通常係將被處理基板5接著於支持基板20。即便為鍍敷處理,於將被處理基板5接著於支持基板20之狀態下進行之狀況亦較多。
圖2表示將支持基板20上接著之被處理基板5朝下配置之例。被處理基板5之被鍍敷處理之被處理面5a之進而下方,配置有圖1所示之鍍敷槽3,於鍍敷處理時將被處理基板5浸漬於鍍敷槽3。
密封部件21係配置於被處理基板5之被處理面5a之周緣部。密封部件21係包圍被處理面5a之中央側之環狀構造體,於被處理基板5被浸漬於鍍敷槽3時,將鍍敷液3a密封於被處理面5a之中央側。密封部件21接著於被處理面5a上之例如抗蝕劑膜5b上。密封部件21係樹脂等具有彈性之絕緣材料。於將被處理基板5浸漬於鍍敷槽3時,移動機構4使被處理基板5移動至圖2之下方。於密封部件21接合有密封支持部件22,若藉由移動機構4使被處理基板5移動至下方,則密封支持部件22向上方按壓密封部件21,藉此密封部件21按壓被處理基板5之應力增大,密封效果提昇。藉由調整密封支持部件22之鉛直方向之長度,可調整密封部件21按壓被處理基板5之應力。藉此,不會施加密封部件21黏在被處理基板5上之程度之過大按壓力,且可調整為以能獲得適切之密封效果之程度之按壓力對被處理基板5進行按壓。
接觸部件23係與密封部件21獨立地設置。接觸部件23接觸支持基板20之外周側面。接觸部件23係導電材料,於接觸部件23接合有向上方延伸之接觸支持部件24。藉由調整該接觸支持部件24之鉛直方向之長度,可調整支持基板20之鉛直方向之高度。藉此,可調整接觸部件23對支持基板20之按壓力。接觸部件23係設定為接地電位,於鍍敷處理時,變成與施加於圖1之陽極電極7之陽極電位相對之基準電位。
如上所述,接觸部件23係與密封部件21分開設置,故而可無關於密封部件21之接著位置、接著高度及按壓力,而調整接觸部件23之接著位置、接著高度及按壓力。因此,與接觸部件23及密封部件21一體成形之情形相比,接觸部件23與密封部件21均容易使接著位置、接著高度及按壓力最佳化。
圖2中,係表示使接觸部件23接觸支持基板20之外周側面之例,但亦可如圖3所示,使其接觸支持基板20之與被處理面5a為相反側之面(本說明書中亦稱為背面)。或者,亦可如圖4所示,使接觸部件23接觸支持基板20之被處理面5a。
圖2~圖4均係與密封部件21分開設置接觸部件23,該點係共通的,接觸部件23只要與密封部件21分開設置,則接觸部件23之接觸態樣並無限制。例如,接觸部件23亦可接觸支持基板20之被處理面5a、側面及背面中之至少2個以上之面。
圖5係自被處理面5a側觀察被處理基板支持部2之俯視圖。如圖5所示,密封部件21為圓環狀之形狀,相對於此,接觸部件23沿著支持基板20之外周緣以特定之間隔設置於複數個部位。複數個接觸部件23分別分開設置,且亦與密封部件21隔開配置。由此,可針對各接觸部件23調整與支持基板20之接著位置、接著高度及按壓力。被處理基板5根據製造時之加工精度而面內方向之厚度、應力之施加方式均不同。此種被處理基板5之偏差,可藉由個別地調整複數個接觸部件23之接著位置、接著高度及按壓力而吸收。
圖2~圖4係表示於將被處理基板5接著於支持基板20上之狀態下進行鍍敷處理之例,但於無支持基板20而對被處理基板5進行鍍敷處理時亦可應用本實施形態。圖6係表示無支持基板20而對被處理基板5進行鍍敷處理時之密封部件21與接觸部件23之接觸態樣之一例的圖。於圖6之情形時,密封部件21之接觸態樣係與圖2~圖4相同,但接觸部件23接觸被處理基板5之與被處理面5a為相反側之面、即背面。作為圖6之一變化例,亦可於被處理基板5之外周側面配置接觸部件23。
如此,於本實施形態中,將密封部件21與接觸部件23分開設置,可與接觸部件23之接著位置、接著高度及按壓力無關地調整密封部件21之接著位置、接著高度及按壓力。由此,可使密封部件21與接觸部件23之接著位置、接著高度及按壓力分別最佳化。
根據本實施形態,無論於將被處理基板5接著於支持基板20之狀態進行鍍敷處理時,抑或將被處理基板5不接著支持基板20而進行鍍敷處理時,均可使密封部件21與接觸部件23之接著位置、接著高度及按壓力分別最佳化。
雖對本發明之若干實施形態進行了說明,但該等實施形態係作為示例而提示者,並不意圖限定發明之範圍。該等新穎之實施形態能以其他各種形態實施,且於不脫離發明之主旨之範圍內,可進行各種省略、置換、變更。該等實施形態及其變化包含於發明之範圍及主旨,且包含於申請專利範圍記載之發明及其均等範圍內。
1‧‧‧電解鍍敷裝置2‧‧‧被處理基板支持部3‧‧‧鍍敷槽3a‧‧‧鍍敷液4‧‧‧移動機構5‧‧‧被處理基板5a‧‧‧被處理面5b‧‧‧抗蝕劑膜6‧‧‧噴出管7‧‧‧陽極電極8‧‧‧間隔壁9‧‧‧循環配管10‧‧‧外槽11‧‧‧排出口12‧‧‧配管13‧‧‧泵14‧‧‧閘閥20‧‧‧支持基板21‧‧‧密封部件22‧‧‧密封支持部件23‧‧‧接觸部件24‧‧‧接觸支持部件
圖1係表示一實施形態之電解鍍敷裝置之要部之剖視圖。 圖2係表示被處理基板支持部之詳細構造之圖。 圖3係表示使接觸部件接觸支持基板之與被處理面為相反側之面之例的圖。 圖4係表示使接觸部件接觸支持基板之被處理面之例之圖。 圖5係自被處理面側觀察被處理基板支持部之俯視圖。 圖6係表示無支持基板而對被處理基板進行鍍敷處理時之密封部件與接觸部件之接觸態樣之一例的圖。
1‧‧‧電解鍍敷裝置
2‧‧‧被處理基板支持部
3‧‧‧鍍敷槽
3a‧‧‧鍍敷液
4‧‧‧移動機構
5‧‧‧被處理基板
5a‧‧‧被處理面
6‧‧‧噴出管
7‧‧‧陽極電極
8‧‧‧間隔壁
9‧‧‧循環配管
10‧‧‧外槽
11‧‧‧排出口
12‧‧‧配管
13‧‧‧泵
14‧‧‧閘閥
20‧‧‧支持基板
21‧‧‧密封部件
23‧‧‧接觸部件
Claims (16)
- 一種電解鍍敷裝置,其具備:鍍敷槽,其可填充鍍敷液;密封部件,其配置於被處理基板之被處理面之周緣部,於將上述被處理基板浸漬於上述鍍敷槽時,將上述鍍敷液密封於上述被處理面之中央側;以及接觸部件,其係與上述密封部件獨立地設置,於較上述密封部件更靠上述被處理基板之周緣部側進行對上述被處理面之電性導通;上述密封部件賦予上述被處理基板之按壓力、與上述接觸部件賦予上述被處理基板之按壓力係可分別獨立地調整。
- 如請求項1之電解鍍敷裝置,其中上述接觸部件係於較上述密封部件更靠上述被處理基板之周緣部側,接觸上述被處理基板,上述接觸部件接觸上述被處理基板之部位之上述被處理面之法線方向之高度、與上述密封部件接觸上述被處理基板之部位之上述被處理面之法線方向之高度係獨立地被調整。
- 如請求項1或2之電解鍍敷裝置,其中上述接觸部件接觸上述被處理基板之與被處理面相連之側方之第1端面、以及與上述被處理面為相反側之第2端面中之至少一者。
- 如請求項3之電解鍍敷裝置,其中上述接觸部件係於上述第1端面以 及上述第2端面中之至少一者,分別隔開而於複數個部位連接,於上述複數個部位之各者,上述接觸部件賦予上述被處理基板之按壓力分別獨立地被調整。
- 如請求項4之電解鍍敷裝置,其中上述接觸部件接觸上述被處理基板之部位之上述被處理面之法線方向之高度、與上述密封部件接觸上述被處理基板之部位之上述被處理面之法線方向之高度,於上述複數個部位之各者係獨立地被調整。
- 一種電解鍍敷裝置,其具備:鍍敷槽,其可填充鍍敷液;密封部件,其配置於被處理基板之被處理面之周緣部,於將上述被處理基板浸漬於上述鍍敷槽時,將上述鍍敷液密封於上述被處理面之中央側;以及接觸部件,其係與上述密封部件獨立地設置,於較上述密封部件更靠上述被處理基板之周緣部側進行對上述被處理面之電性導通;以及支持基板,其支持上述被處理基板;且上述密封部件賦予上述被處理基板之按壓力、與上述接觸部件賦予上述支持基板之按壓力係可分別獨立地調整。
- 如請求項6之電解鍍敷裝置,其中上述接觸部件接觸上述支持基板,上述接觸部件接觸上述支持基板之部位之上述被處理面之法線方向之高度、與上述密封部件接觸上述被處理基板之部位之上述被處理面之法 線方向之高度係獨立地被調整。
- 如請求項6或7之電解鍍敷裝置,其中上述接觸部件接觸上述支持基板之側方之第3端面、以及上述支持基板與上述被處理基板之接觸面為相反側之第4端面中之至少一者。
- 如請求項8之電解鍍敷裝置,其中上述接觸部件係於上述第3端面以及上述第4端面中之至少一者,分別隔開而於複數個部位連接,於上述複數個部位之各者,上述接觸部件賦予上述支持基板之按壓力分別獨立地被調整。
- 如請求項9之電解鍍敷裝置,其中上述接觸部件接觸上述支持基板之部位之上述被處理面之法線方向之高度、與上述密封部件接觸上述被處理基板之部位之上述被處理面之法線方向之高度,於上述複數個部位之各者係獨立地被調整。
- 一種電解鍍敷方法,其包含以下步驟:向鍍敷槽供給鍍敷液;以及將被處理基板浸漬於經供給之上述鍍敷液;且浸漬於上述鍍敷液時,使用配置於上述被處理基板之被處理面之周緣部之密封部件、及與上述密封部件獨立地設置於較上述密封部件更靠上述被處理基板之周緣部側之接觸部件,將上述被處理基板朝向上述密封部件按壓。
- 如請求項11之電解鍍敷方法,其中上述接觸部件係於較上述密封部件更靠上述被處理基板之周緣部側,接觸上述被處理基板、或者接觸支持上述被處理基板之支持基板,上述接觸部件接觸上述被處理基板或者上述支持基板之部位之上述被處理面之法線方向之高度、與上述密封部件接觸上述被處理基板之部位之上述被處理面之法線方向之高度係獨立地被調整。
- 如請求項12之電解鍍敷方法,其中上述接觸部件接觸上述被處理基板之與被處理面相連之側方之第1端面、與上述被處理面為相反側之第2端面、支持上述被處理基板之支持基板之側方之第3端面、以及上述支持基板之與上述被處理基板之接觸面為相反側之第4端面中之至少一者。
- 如請求項13之電解鍍敷方法,其中上述密封部件賦予上述被處理基板之按壓力、與上述接觸部件賦予上述被處理基板或者上述支持基板之按壓力係分別獨立地被調整。
- 如請求項14之電解鍍敷方法,其中上述接觸部件係於上述第1至第4端面之至少一者,分別隔開而於複數個部位連接,於上述複數個部位之各者,上述接觸部件賦予上述被處理基板或者上述支持基板之按壓力分別獨立地被調整。
- 如請求項15之電解鍍敷方法,其中上述接觸部件接觸上述被處理基板或者上述支持基板之部位之上述被處理面之法線方向之高度、與上述密 封部件接觸上述被處理基板之部位之上述被處理面之法線方向之高度,於上述複數個部位之各者獨立地被調整。
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- 2018-03-20 JP JP2018053267A patent/JP6963524B2/ja active Active
- 2018-08-06 TW TW107127305A patent/TWI699460B/zh active
- 2018-08-06 CN CN201810886865.0A patent/CN110306231B/zh active Active
- 2018-08-27 US US16/113,960 patent/US10985006B2/en active Active
Patent Citations (2)
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TWI468552B (zh) * | 2008-11-14 | 2015-01-11 | Ct De Rech Public Gabriel Lippmann | 用以電鍍導電基板之系統以及在電鍍期間用以支承導電基板的基板支承件 |
TWI522496B (zh) * | 2012-01-30 | 2016-02-21 | Ebara Corp | Substrate holder and plating device |
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JP6963524B2 (ja) | 2021-11-10 |
CN110306231A (zh) | 2019-10-08 |
JP2019163529A (ja) | 2019-09-26 |
US10985006B2 (en) | 2021-04-20 |
US20190295836A1 (en) | 2019-09-26 |
CN110306231B (zh) | 2021-07-13 |
TW201940749A (zh) | 2019-10-16 |
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