TWI698782B - 具有觸控感測器的顯示器及製造其之方法 - Google Patents

具有觸控感測器的顯示器及製造其之方法 Download PDF

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TWI698782B
TWI698782B TW107144755A TW107144755A TWI698782B TW I698782 B TWI698782 B TW I698782B TW 107144755 A TW107144755 A TW 107144755A TW 107144755 A TW107144755 A TW 107144755A TW I698782 B TWI698782 B TW I698782B
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planarization layer
protective film
common electrode
touch sensing
openings
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TW201928635A (zh
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白正善
南承熙
方政鎬
李承柱
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南韓商樂金顯示科技股份有限公司
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3266—Details of drivers for scan electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3275—Details of drivers for data electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

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Abstract

本發明係具有可降低寄生電容的觸控感測的顯示器及製造其之方法。顯示器包含多個觸控感測線路、底平坦化層、頂平坦化層以及頂保護膜。多個觸控感測線路分別排列以穿過多個共用電極區塊，且共用電極區塊與多個像素電極形成電場。底平坦化層在重疊於多個薄膜電晶體的多個汲極電極的區域具有多個開口。頂平坦化層設置於像素電極與共用電極區塊其中一者以及觸控感測線路之間，藉以覆蓋底平坦化層的側面。頂保護膜介於像素電極及共用電極區塊之間而在不降低液晶電容及儲存電容的前提下可降低觸控感測線路及共用電極區塊之間產生的寄生電容。

Description

具有觸控感測器的顯示器及製造其之方法
本發明係關於一種顯示器及製造所述顯示器的一種方法，尤其是關於具有能降低寄生電容的觸控感測器之顯示器及製造所述顯示器的方法。
觸控面板係做為顯示器，例如液晶顯示器(liquid crystal display)、有機發光顯示器(organic light emitting display)或電泳顯示器(electrophoretic display)，之一種輸入裝置，且可讓使用者利用手指或手寫筆(stylus pen)直接接觸螢幕來輸入資訊。
近年來，為了滿足可攜式終端裝置(例如智慧型手機、平板電腦等)的薄化，對於觸控感測器構成安裝於顯示器中的觸控面板之顯示器的需求逐漸增加。
然而，在具有內建(built-in)觸控感測器的顯示器中，顯示面板的多個訊號線路或多個電極排列於觸控感測器附近。不必要的寄生電容便因為顯示面板的這些電子或訊號線路而形成。所述的寄生電容便增加觸控驅動承載(touch driving load)並降低觸控感測的精確度，或更甚者，可能造成無法執行觸控感測。
因此，本發明係針對具有多個觸控感測器的一顯示器以及製造所述顯示器的一方法，且所述顯示器及製造其之方法實質上解決因習知技術的限制與缺點而造成的一或多個問題。
本發明的一目的在於提供具有能降低寄生電容(parasitic capacitance)的多個觸控感測器的一顯示器及製造所述顯示器的一方法。
本發明額外的優點、目的與特徵將部分地於以下之描述之闡述，且熟悉本技藝者可參閱以下之描述或可由實施本發明所習得而清楚理解。本發明的目的及其他優點可尤其藉由以下之描述、於此描述的請求項及相關圖式所指出的態樣被實現及獲得。
如於此實施及廣泛地描述，為了根據本發明的目的達成這些目標及其他優點，具有多個觸控感測器的一顯示器包含多個觸控感測線路、一底平坦化層以及一頂平坦化層。多個觸控感測線路分別排列以穿過多個共用電極區塊(common electrode block)，且這些共用電極區塊與多個像素電極形成一電場。底平坦化層在重疊於多個薄膜電晶體的多個汲極電極的區域具有多個開口。頂平坦化層設置於像素電極與共用電極區塊之其中一者以及觸控感測線路之間，藉以覆蓋底平坦化層的一側面。
關於具有多個觸控感測器的一顯示器之部份實施例包含：多個薄膜電晶體、多個像素電極、多個共用電極區塊、多個觸控感測線路、一底保護膜、一底平坦化層、一頂平坦化層以及一頂保護膜。這些薄膜電晶體排列於一基板；這些像素電極各連接至相對應的其中一個薄膜電晶體；這些共用電極區塊用於與這些像素電極形成一電場，且設置於基板；這些觸控感測線路各連接至相對應的其中一個共用電極區塊；底保護膜佈置於這些薄膜電晶體及這些觸控感測線路之間，且底保護膜具有重疊於這些薄膜電晶體的多個汲極電極的多個開口；底平坦化層佈置於底保護膜，且底平坦化層具有重疊於底保護膜的這些開口的多個開口；頂平坦化層設置於像素電極與這些共用電極區塊之其中一者以及這些觸控感測線路之間。頂平坦化層的多個側面覆蓋底平坦化層中由底平坦化層的這些開口所暴露的多個側面，且頂平坦化層的這些側面、底平坦化層中的這些開口以及底保護膜中的這些開口形成多個像素接觸孔，且這些像素接觸孔暴露這些薄膜電晶體的這些汲極電極；頂保護膜佈置於這些像素電極及這些共用電極區塊之間。這些像素電極接觸頂平坦化層及底保護膜中由這些像素接觸孔所暴露之多個側面。
關於製造具有多個觸控感測器的一顯示器之一方法的部份實施例包含：形成多個薄膜電晶體於一基板；形成一底保護膜以覆蓋這些薄膜電晶體，且底保護膜具有重疊於這些薄膜電晶體的多個汲極電極的多個開口；形成一底平坦化層於底保護膜，且底平坦化層具有重疊於底保護膜的這些開口的多個開口；形成多個觸控感測線路於底平坦化層；形成一頂平坦化層於這些觸控感測線路及底平坦化層。頂平坦化層的多個側面覆蓋底平坦化層中由底平坦化層的這些開口暴露的多個側面，且頂平坦化層的這些側面、底平坦化層中的這些開口以及底保護膜中的這些開口形成多個像素接觸孔，且這些像素接觸孔暴露這些薄膜電晶體的這些汲極電極；形成多個像素電極，這些像素各透過這些像素接觸孔的多個側面連接至相對應的一個薄膜電晶體；形成一頂保護膜於頂平坦化層及這些像素電極；以及形成用於與這些像素電極形成一電場的多個共用電極區塊，且這些共用電極區塊各佈置於頂保護膜而連接至相對應的一個觸控感測線路。
關於具有多個觸控感測器的一顯示器之部份實施例包含：一基板、一薄膜電晶體(Thin-Film Transistor，TFT)、一第一保護膜、一第一平坦化層、一觸控感測線路(Touch Sensing Line，TSL)、一第二平坦化層、一像素電極以及一共用電極區塊。薄膜電晶體佈置於基板，且薄膜電晶體包含一電極；第一保護膜位於薄膜電晶體，且第一保護膜包含暴露薄膜電晶體之電極之一孔洞的一部份；第一平坦化層位於第一保護膜及薄膜電晶體之上。第一平坦化層包含一孔洞，且第一平坦化層的孔洞重疊於由第一保護膜的孔洞所暴露的電極之部分；觸控感測線路位於底平坦化層；第二平坦化層位於觸控感測線路及第一平坦化層之上，且第二平坦化層覆蓋第一平坦化層中由第一平坦化層的孔洞所暴露的一側面，而使一孔洞形成於第二平坦化層中；像素電極位於第二平坦化層，且像素電極透過第二平坦化層中的孔洞、第一平坦化層的孔洞以及第一保護膜中的孔洞電性連接至薄膜電晶體的電極；共用電極區塊位於像素電極上，且共用電極區塊電性連接至觸控感測線路。
可以理解的是，本發明以上之概略敘述以及以下之詳細描述皆為示範性質，並用於提供本發明的請求項更進一步的解釋。
現在將參照相關圖式詳細說明本發明優選的實施例。
圖1為根據一實施例所繪示之具有多個觸控感測器的顯示器之方塊圖。
如圖1所示之顯示器包含一資料驅動器 (data driver) 204、一閘極驅動器 (gate driver) 202、一觸控驅動器 (touch driver) 206以及一顯示面板200。
資料驅動器204將來自一時序控制器(timing controller)(未繪示)的資料轉換成類比資料電壓(analog data voltage)，並將該類比資料電壓提供至資料線路(data lines) DL (也可指資料線路DL1、DL2、DL3至DLm)以響應來自該時序控制器的一資料控制訊號。
閘極驅動器202依序驅動顯示面板200的閘極線路(gate line) GL (也可指閘極線路GL1、GL2、GL3至GLn)以響應來自該時序控制器的一閘極控制訊號。當其中一條閘極線路GL處於一掃描期間(scan period)時，閘極驅動器202提供一閘極導通電壓(gate-on voltage)的一掃描脈衝(scan pulse)至相對應的閘極線路GL；而於剩下的期間，也就是當其他閘極線路GL處於被驅動期間時，閘極驅動器202提供一閘極中斷電壓(gate-off voltage)至相對應的閘極線路GL。在製造薄膜電晶體的過程中，閘極驅動器202與各個像素的這些薄膜電晶體一起形成，並且閘極驅動器202位於一非顯示區域中，其中該非顯示區域形成於顯示面板200的一基板之一側或兩側。
觸控驅動器206連接至顯示面板200的多個觸控感測線路(Touch Sensing Line，TSL)，而從這些觸控感測線路TSL接收來自使用者的觸控訊號。 當使用者觸控時電容會改變，觸控驅動器206可藉由感測電容的變化來偵測使用者的觸控是否發生以及觸控位置。
多個像素以一矩陣配置排列於顯示面板200中並顯示一影像。當顯示面板200為一液晶面板時，顯示面板200可包含一色彩過濾器基板、一薄膜電晶體基板以及一液晶層；其中一色彩過濾器陣列形成於色彩過濾器基板，一薄膜電晶體陣列形成於薄膜電晶體基板，而液晶層介於色彩過濾器基板及薄膜電晶體基板之間。
如圖2所示，顯示面板200包含一主動區域AA以及一邊框區域BA，且邊框區域BA設置於主動區域AA的至少一側。
連接至主動區域AA的訊號線路GL、DL、TSL的多個墊片(pads)排列於邊框區域BA中。也就是說，連接至閘極線路GL的閘極墊片(未繪示)、連接至資料線路DL的資料墊片(未繪示)以及連接至觸控感測線路TSL的共用墊片(common pad)(未繪示)排列於邊框區域BA中。此外，閘極驅動器202、資料驅動器204或觸控驅動器206至少其中一者可佈置於邊框區域BA中。
多個觸控感測線路TSL分別連接多個共用電極塊132至觸控驅動器206。這些共用電極區塊132及這些觸控感測線路TSL排列於主動區域AA中。於此，各個觸控感測線路TSL以一垂直或水平的方向佈置，並穿過這些共用電極區塊132。舉例來說，這些觸控感測線路TSL可平行於資料線路DL的一方向佈置，並穿過以資料線路DL的方向佈置的這些共用電極區塊132。
於圖2的示例中，多個共用電極區塊132以平行閘極線路GL的一第一方向以及平行於資料線路DL的一第二方向佈置。這些共用電極區塊132也可彼此分隔。
這些共用電極區塊132藉由分隔顯示器的共用電極而形成。這些共用電極區塊132能於顯示影像期間(image display period)作為一共用電極，且能於觸控感測期間(touch sensing period)作為一觸控電極。也就是說，於顯示影像期間，這些共用電極區塊132接收來自這些觸控感測線路TSL所提供的一共用電壓。此外，於觸控感測期間(例如無顯示影像期間)，這些共用電極區塊132透過這些觸控感測線路TSL提供所感測到的觸控感測電壓至觸控驅動器206。
如圖3所示，考慮到使用者觸控區域(user touch area)，各個共用電極區塊132的尺寸需對應於至少兩個像素區域(pixel areas)。因此，一個共用電極區塊132可重疊於多個像素電極122。
如圖4所示，閘極線路GL及資料線路DL的交會處定義有一像素區域。在每一像素區域中，一像素電極122連接至一薄膜電晶體100。
薄膜電晶體100可利用資料線路DL的一資料訊號向像素電極122提供電荷(charge)以響應閘極線路GL(未繪示於圖4)的一掃描訊號，並保持像素電極122的提供電荷的狀態。為了達到此目的，薄膜電晶體100可包含一閘極電極106、一源極電極108、一汲極電極110以及一半導體層；其中閘極電極106連接至閘極線路GL、源極電極108連接至資料線路DL、汲極電極110連接至像素電極122。而半導體層形成於一閘極絕緣膜112而在源極電極108及汲極電極110之間形成一通道(channel)。於此，該半導體層包含一主動層102及一歐姆接觸層(ohmic contact layer) 104。主動層102形成於閘極絕緣膜112而重疊於閘極電極106，進而形成源極電極108及汲極電極110之間的該通道。歐姆接觸層104形成於主動層102中除了形成有該通道之外的部分，而於源極及汲極電極108、110以及主動層102之間形成歐姆接觸(ohmic contact)。主動層102以及歐姆接觸層104重疊於資料線路DL以及源極及汲極電極108、110。
在薄膜電晶體100上，依序堆疊有一底保護膜118、一底平坦化層116、一夾層保護膜124、一頂平坦化層126以及一頂保護膜128。
底保護膜118、夾層保護膜124及頂保護膜128各自具有一單層結構(monolayer structure)或多層結構(multilayer structure)，且單層結構或多層結構由無機絕緣材料所形成，其中無機絕緣材料例如為矽氮化物(SiNx )、矽氮氧化物(SiON)或二氧化矽(SiO2 )。尤其，主動層102可由氧化半導體(oxide semiconductor)所形成，接觸主動層102的底保護膜118可由矽氧化物(silicon oxide，SiOx )所形成。相較於利用氫氣生成一薄膜的矽氮化物(silicon nitride，SiNx )，矽氧化物具有較低的氫含量(hydrogen content)。因此，便可防止氫氣於形成底保護膜118時擴散至主動層102中，進而可防止薄膜電晶體100的一臨界電壓(threshold voltage)被改變。此外，夾層保護膜124可由矽氮化物(silicon nitride，SiNx )所形成並可防止這些觸控感測線路TSL氧化。
底平坦化層116及頂平坦化層126各自可由感光有機絕緣材料(photosensitive organic insulating material)所形成而無須蝕刻製程。舉例來說，底平坦化層116及頂平坦化層126可由光丙烯酸(photoacryl)、聚對二甲苯(parylene)或矽氧烷(siloxane)所組成的有機絕緣材料所形成。於此，底平坦化層116在重疊於薄膜電晶體100的汲極電極110的一區域具有一開口116A。頂平坦化層126及夾層保護膜124覆蓋於底平坦化層116暴露在開口116A的側面。因此，開口116A形成一像素接觸孔120，其中像素接觸孔120穿過頂平坦化層126、夾層保護膜124及底保護膜118，而像素接觸孔120具有較開口116A還小的線寬度(line width)。在像素接觸孔120周圍，位於頂平坦化層126與汲極電極110之間且位於頂平坦化層126之下的夾層保護膜124及底保護膜118能夠自動對位(self-aligned)。因此，僅夾層保護膜124及底保護膜118於像素接觸孔120周圍佈置於頂平坦化層126及汲極電極110之間。
據此，於本發明中，底保護膜118佈置於薄膜電晶體100及底平坦化層116之間，且夾層保護膜124介於觸控感測線路TSL及頂平坦化層126之間，其中底保護膜118與夾層保護膜124係由無機絕緣材料所形成，而底平坦化層116與頂平坦化層126係由有機絕緣材料所形成。相較於由有機絕緣材料形成的底平坦化層116及頂平坦化層126，由無機絕緣材料形成的底保護膜118及夾層保護膜124能與薄膜電晶體100及觸控感測線路TSL具有較佳的黏著強度。因此，便可防止底保護膜118及夾層保護膜124自薄膜電晶體100及觸控感測線路TSL的頂面分離，進而防止薄膜電晶體100及觸控感測線路TSL氧化。
像素電極122電性連接至汲極電極110，且汲極電極110暴露於像素接觸孔120。像素接觸孔120穿過底保護膜118、夾層保護膜124及頂平坦化層126，且底保護膜118的側面、夾層保護膜124的側面及頂平坦化層126的側面暴露於像素接觸孔120，而讓像素電極122直接接觸這些側面。
於此，由一有機絕緣材料形成的頂平坦化層126之側面以及由無機絕緣材料形成的底保護膜118及夾層保護膜124之側面暴露於相同的像素接觸孔120。因此，本發明可將所需要的像素接觸孔120之數量最小化，而縮小像素接觸孔120所佔據的區域並改善開孔率(aperture ratio)。
共用電極區塊132形成於各個像素區域的頂保護膜128而具有多個狹縫130。頂保護膜128設置於各個像素區域之間，且頂保護膜128與共用電極區塊132重疊於像素電極122，而形成一邊緣電場(fringe field)。因此，於顯示影像期間，提供一共用電壓至共用電極區塊132，並提供一像素電壓至像素電極122，且共用電極區塊132與像素電極122形成該邊緣電場，而使設置於薄膜電晶體基板及色彩過濾器基板之間的液晶分子藉由介電各向異性(dielectric anisotropy)旋轉。此外，像素區域的光穿透性(light transmissivity)根據這些液晶分子的旋轉程度變化，進而實現層次變化(gradation)。
此外，這些共用電極區塊132於觸控感測期間，例如無顯示影像期間，作為感測使用者觸控位置的觸控電極。
為此，各個共用電極區塊132連接至穿過共用電極區塊132的一個觸控感測線路TSL。舉例來說，圖3中所示的共用電極區塊132連接至第一至第三觸控感測線路TSL1、TSL2、TSL3中的一第一觸控感測線路TSL1。詳細來說，觸控感測線路TSL設置於底平坦化層116且連接至設置於頂保護膜128的共用連接電極。底平坦化層116由穿過夾層保護膜124及頂平坦化層126的一第一觸控接觸孔166及穿過頂保護膜128的一第二觸控接觸孔168所暴露。
在穿過共用電極區塊132的觸控感測線路TSL之中，每一個共用電極區塊132僅會連接至一條觸控感測線路TSL而無連接至其餘的觸控感測線路TSL。舉例來說，圖3中所示的共用電極區塊132在第一至第三觸控感測線路TSL1、TSL2、TSL3中，除了第一觸控感測線路TSL1之外，並沒有連接至第二及第三觸控感測線路TSL2、TSL3。詳細來說，除了穿過各個共用電極區塊132的觸控感測線路TSL，其餘的觸控感測線路TSL並無連接至共用電極區塊132；並且，其餘的觸控感測線路TSL以由一無機絕緣材料形成的夾層保護膜124、由一有機絕緣材料形成的頂平坦化層126以及由一無機絕緣材料形成的頂保護膜128重疊於常見電極區塊132，且夾層保護膜124、頂平坦化層126及頂保護膜128設置於其餘的觸控感測線路TSL及常見電極區塊132之間。因此，這些觸控感測線路TSL及這些共用電極區塊132之間的距離便會隨著有機絕緣材料之頂平坦化層126的厚度而增加，而使這些觸控感測線路TSL及這些共用電極區塊132之間的寄生電容(parasitic capacitance) Cc可被降低。隨著寄生電容Cc降低，便可降低觸控驅動承載(touch driving load)，進而提升觸控感測的準確度。
據此，於本發明中，共用電極區塊132及這些像素電極122以頂保護膜128彼此分隔，且頂保護膜128以一無機絕緣材料形成並設置於共用電極區塊132及這些像素電極122之間。並且，這些觸控感測線路TSL及共用電極區塊132以夾層保護膜124、頂保護膜128及頂平坦化層126彼此分隔。夾層保護膜124及頂保護膜128以無機絕緣材料形成，且頂平坦化層126以有機絕緣材料形成。而夾層保護膜124、頂保護膜128及頂平坦化層126設置於這些觸控感測線路TSL及共用電極區塊132之間。因此，於本發明中，便可在不降低產生於這些共用電極區塊132及這些像素電極122之間的液晶電容(liquid crystal capacitance)及儲存電容(storage capacitance)的前提下，降低這些觸控感測線路TSL及這些共用電極區塊132之間所產生的寄生電容。
圖5A至圖5G為根據一實施例說明製造圖4中的顯示器之方法的剖面示意圖。
如圖5A所示，資料線路DL及薄膜電晶體100透過至少兩次光罩製程(mask processes)而形成於一基板101。
詳細來說，一閘極金屬層沉積於基板101的整個頂面後被圖案化，而形成閘極電極106。此後，藉由塗覆一無機絕緣材料於設有閘極電極106的基板101之整個頂面上而形成閘極絕緣膜112。一半導體材料及一資料金屬層依序堆疊於閘極絕緣膜112後被圖案化，而形成主動層102、歐姆接觸層104、源極電極108、汲極電極110以及資料線路DL。
如圖5B所示，在設有資料線路DL與薄膜電晶體100的基板101上依序形成底保護膜118及底平坦化層116。
詳細來說，堆疊一無機絕緣材料於設有資料線路DL與薄膜電晶體100的基板101之整個頂面上而形成底保護膜118。於此，底保護膜118所使用的一無機絕緣材料例如為矽氮化物(SiNx )、矽氮氧化物(SiON)或二氧化矽(SiO2 )。此後，一有機絕緣材料塗佈於底保護膜118的整個頂面上後透過光刻製程(photolithographic process)被圖案化，進而形成具有這些開口116A的底平坦化層116。底平坦化層116使用光丙烯酸(photoacryl)、聚對二甲苯(parylene)或矽氧烷(siloxane)所組成的有機絕緣材料。這些開口116A重疊於這些薄膜電晶體100的這些汲極電極110。
如圖5C所示，在形成有底平坦化層116的基板101上形成這些觸控感測線路TSL。
一不透明導體層(opaque conductive layer)沉積於形成有底平坦化層116的基板101之整個頂面上，且接著透過一光刻製程及一蝕刻製程(etching process)被圖案化。因此，這些觸控感測線路TSL形成於底平坦化層116。於此，這些觸控感測線路TSL由一不透明導體層形成而具有單層結構或多層結構，所述結構由鋁(Al)、鈦(Ti)、銅(Cu)、鉬(Mo)、鉭(Ta)及鉬鈦合金(MoTi)至少其中一種金屬所組成。
如圖5D所示，在設有這些觸控感測線路TSL的基板101上形成夾層保護膜124及頂平坦化層126。
詳細來說，在形成有這些觸控感測線路TSL的基板101之整個頂面上，藉由沉積一無機絕緣材料而形成夾層保護膜124。於此，夾層保護膜124所使用的一無機絕緣材料例如為矽氮化物(SiNx )、矽氮氧化物(SiON)或二氧化矽(SiO2 )。此後，在夾層保護膜124的整個頂面上，藉由沉積一有機絕緣材料而形成頂平坦化層126。頂平坦化層126使用光丙烯酸(photoacryl)、聚對二甲苯(parylene)或矽氧烷(siloxane)所組成的有機絕緣材料。頂平坦化層126透過一光刻製程被圖案化，而形成多個像素接觸孔120及多個第一觸控接觸孔166。此後，使用頂平坦化層126作為一遮罩而透過一蝕刻製程來蝕刻夾層保護膜124及底保護膜118。因此，這些像素接觸孔120穿過頂平坦化層126、夾層保護膜124及底保護膜118，並因而暴露出汲極電極110。此外，這些第一觸控接觸孔166穿過頂平坦化層126及夾層保護膜124，而暴露出這些觸控感測線路TSL。
如圖5E所示，在形成有夾層保護膜124及頂平坦化層126的基板101上形成這些像素電極122。
詳細來說，一透明導體層(transparent conductive layer)沉積於形成有頂平坦化層126的基板101之整個頂面上。此後，該透明導體層透過一光刻製程及一蝕刻製程被圖案化，而形成這些像素電極122。
如圖5F所示，在形成有這些像素電極122的基板101上形成具有第二觸控接觸孔168的頂保護膜128。
詳細來說，頂保護膜128所使用的一無機絕緣材料例如為矽氮化物(SiNx )、矽氮氧化物(SiON)或二氧化矽(SiO2 )，且頂保護膜128形成於形成有這些像素電極122的基板101之整個表面上。此後，頂保護膜128透過一光刻製程及一蝕刻製程被圖案化，而形成暴露這些觸控感測線路TSL的這些第二觸控接觸孔168。
如圖5G所示，在具有這些第二觸控接觸孔168的基板101上形成這些共用電極區塊132。
詳細來說，一透明導體層沉積於具有這些第二觸控接觸孔168的基板101之整個頂面上。此後，該透明導體層透過一光刻製程及一蝕刻製程被圖案化，而形成這些共用電極區塊132。
雖然本發明示範性地描述這些像素電極122設置於這些常見電極區塊132之下的結構，但是這些常見電極區塊132可設置於這些像素電極122之下。
由以上述敘顯而易見的是，依據本發明之具有多個觸控感測器的一顯示器中，這些共用電極區塊及這些像素電極以頂保護膜彼此分隔，且頂保護膜以無機絕緣材料形成並設置於這些共用電極區塊及這些像素電極之間。並且，這些觸控感測線路及這些共用電極區塊以夾層保護膜、頂保護膜及頂平坦化層彼此分隔。夾層保護膜及頂保護膜由無機絕緣材料形成，且頂平坦化層由有機絕緣材料形成。夾層保護膜、頂保護膜及頂平坦化層設置於這些觸控感測線路及這些共用電極區塊之間。因此，於本發明中，在不降低這些共用電極區塊及這些像素電極之間所產生的液晶電容及儲存電容的前提下，這些觸控感測線路及這些共用電極區塊之間所產生的寄生電容可被降低。此外，於本發明中，由有機絕緣材料形成的頂平坦化層之側面及由無機絕緣材料形成的底保護膜及夾層保護膜的側面由相同像素接觸孔所暴露，而使像素電極電性連接至由一像素接觸孔所暴露的一汲極電極。因此，依據本發明的顯示器中，所需的像素接觸孔的數量可被最小化，而縮小這些像素接觸孔所佔的區域，進而優化開孔率。此外，於本發明中，穿過底保護膜及夾層保護膜的這些像素接觸孔使用頂平坦化層作為一遮罩，而可簡化製造顯示器的過程，並降低製造顯示器的成本。
對熟悉本技藝者顯而易見的是，在不脫離本發明的精神或範圍下，皆能對本發明作出各種修改與變化。因此，本發明包含涵蓋於相關請求項及其相等之範圍內所作出的變化及改變。
100‧‧‧薄膜電晶體 101‧‧‧基板 102‧‧‧主動層 104‧‧‧歐姆接觸層 106‧‧‧閘極電極 108‧‧‧源極電極 110‧‧‧汲極電極 112‧‧‧閘極絕緣膜 116‧‧‧底平坦化層 116A‧‧‧開口 118‧‧‧底保護膜 120‧‧‧像素接觸孔 122‧‧‧像素電極 124‧‧‧夾層保護膜 126‧‧‧頂平坦化層 128‧‧‧頂保護膜 130‧‧‧狹縫 132‧‧‧共用電極區塊 166‧‧‧第一觸控接觸孔 168‧‧‧第二觸控接觸孔 200‧‧‧顯示面板 202‧‧‧閘極驅動器 204‧‧‧資料驅動器 206‧‧‧觸控驅動器 DL1、DL2、DL3‧‧‧至DLm資料線路 GL1、GL2、GL3‧‧‧至GLn閘極線路 TSL‧‧‧觸控感測線路 AA‧‧‧主動區域 BA‧‧‧邊框區域 TSL1、TSL2、TSL3‧‧‧第一至三觸控感測線路 Cc‧‧‧寄生電容
相關圖式係為用於更進一步地理解本發明，這些相關圖式可併入並構成本申請、本發明示範實施例及用於解釋本發明原理之描述的一部分。於圖式中： 圖1為根據一實施例所繪示之具有多個觸控感測器的顯示器之方塊圖。 圖2為根據一實施例所繪示之具有如圖1的觸控感測器之顯示面板的細部平面圖。 圖3為根據一實施例之圖2中的A部分之平面圖的局部放大圖。 圖4為根據圖3的顯示面板沿割面線I-I’及II-II’所繪示之剖面示意圖。 圖5A至圖5G為說明製造圖4中的顯示器之方法的剖面示意圖。
100‧‧‧薄膜電晶體
101‧‧‧基板
102‧‧‧主動層
104‧‧‧歐姆接觸層
106‧‧‧閘極電極
108‧‧‧源極電極
110‧‧‧汲極電極
112‧‧‧閘極絕緣膜
116‧‧‧底平坦化層
116A‧‧‧開口
118‧‧‧底保護膜
120‧‧‧像素接觸孔
122‧‧‧像素電極
124‧‧‧夾層保護膜
126‧‧‧頂平坦化層
128‧‧‧頂保護膜
130‧‧‧狹縫
132‧‧‧共用電極區塊
166‧‧‧第一觸控接觸孔
168‧‧‧第二觸控接觸孔
TSL‧‧‧觸控感測線路
Cc‧‧‧寄生電容
DL1、DL2‧‧‧資料線路

Claims (20)

  1. 一種顯示器，具有多個觸控感測器，該顯示器包含：多個薄膜電晶體，排列於一基板；多個像素電極，該些像素電極各連接至相對應的一個該薄膜電晶體；多個共用電極區塊，用於與該些像素電極形成一電場，該些共用電極區塊排列於該基板；多個觸控感測線路，該些觸控感測線路各連接至相對應的一個該共用電極區塊；一底保護膜，佈置於該些薄膜電晶體及該些觸控感測線路之間，該底保護膜具有多個開口，且該底保護膜的該些開口重疊於該些薄膜電晶體的多個汲極電極；一底平坦化層，佈置於該底保護膜，該底平坦化層具有多個開口，且該底平坦化層的該些開口重疊於該底保護膜的該些開口；一頂平坦化層，佈置於該像素電極與該些共用電極區塊之其中一者以及該些觸控感測線路之間，其中該頂平坦化層的多個側面覆蓋該底平坦化層中由該底平坦化層的該些開口所暴露的多個側面，且該頂平坦化層的該些側面、該底平坦化層中的該些開口以及該底保護膜中的該些開口形成多個像素接觸孔，且該些像素接觸孔暴露該些薄膜電晶體的該些汲極電極；以及一頂保護膜，佈置於該些像素電極及該些共用電極區塊之間，其中，該些像素電極接觸該頂平坦化層及該底保護膜中由該些像素接觸孔所暴露之多個側面。
  2. 如申請專利範圍第1項所述之顯示器，更包含：一夾層保護膜，佈置於該些觸控感測線路及該頂平坦化層之間，該夾層保護膜具有多個開口，且該夾層保護膜的該些開口重疊於該底保護膜的該些開口，其中，該頂平坦化層的多個側面、該夾層保護膜的該些開口以及該底保護膜的該些開口形成該些像素接觸孔。
  3. 如申請專利範圍第2項所述之顯示器，其中該頂平坦化層及該底平坦化層各包含一有機絕緣材料，且該底保護膜、該夾層保護膜及該頂保護膜各包含一無機絕緣材料。
  4. 如申請專利範圍第2項所述之顯示器，其中：穿過各個該些共用電極區塊之該些觸控感測線路中，其中一個該觸控感測線路暴露於一觸控接觸孔，並連接至相對應的其中一個該共用電極區塊，該觸控接觸孔穿過該夾層保護膜、該頂平坦化層及該頂保護膜；並且其餘的該些觸控感測線路藉由與該夾層保護膜、該頂平坦化層以及該頂保護膜重疊於相對應的該共用電極區塊，而穿過相對應的其中一個該共用電極區塊，且該夾層保護膜、該頂平坦化層以及該頂保護膜設置於其餘的該些觸控感測線路以及相對應的該共用電極區塊之間。
  5. 如申請專利範圍第3項所述之顯示器，其中：穿過各個該些共用電極區塊之該些觸控感測線路中，其中一個該觸控感測線路暴露於一觸控接觸孔，並連接至相對應的其中一個該共用電極區塊，該觸控接觸孔穿過該夾層保護膜、該頂平坦化層及該頂保護膜；並且 其餘的該些觸控感測線路藉由與該夾層保護膜、該頂平坦化層以及該頂保護膜重疊於相對應的其中一個該共用電極區塊而穿過相對應的其中一個該共用電極區塊，且該夾層保護膜、該頂平坦化層以及該頂保護膜設置於其餘的該些觸控感測線路以及相對應的該共用電極區塊之間。
  6. 如申請專利範圍第1項所述之顯示器，其中：該些像素電極排列於該頂平坦化層，並且該些共用電極區塊排列於該頂保護膜，且覆蓋該些像素電極。
  7. 一種製造具有多個觸控感測器的一顯示器的方法，包含：形成多個薄膜電晶體於一基板；形成覆蓋該些薄膜電晶體的一底保護膜，該底保護膜具有多個開口，且該底保護膜的該些開口重疊於該些薄膜電晶體的多個汲極電極；形成一底平坦化層於該底保護膜，該底平坦化層具有多個開口，且該底平坦化層的該些開口重疊於該底保護膜的該些開口；形成多個觸控感測線路於該底平坦化層；形成一頂平坦化層於該些觸控感測線路以及該底平坦化層，其中該頂平坦化層的多個側面覆蓋該底平坦化層中由該底平坦化層的該些開口暴露的多個側面，且該頂平坦化層的該些側面、該底平坦化層中的該些開口以及該底保護膜的該些開口形成多個像素接觸孔，且該些像素接觸孔暴露該些薄膜電晶體的該些汲極電極；形成多個像素電極，該些像素電極各透過該些像素接觸孔的多個側面連接至相對應的一個該薄膜電晶體； 形成一頂保護膜於該頂平坦化層及該些像素電極；以及形成多個共用電極區塊，該些共用電極區塊用於與該些像素電極形成一電場，該些共用電極區塊各佈置於該頂保護膜而連接至相對應的一個該觸控感測線路。
  8. 如申請專利範圍第7項所述之方法，更包含：形成一夾層保護膜於該觸控感測線路及該頂平坦化層之間，該夾層保護膜具有多個開口，該夾層保護膜的該些開口重疊於該底保護膜的該些開口，其中，該頂平坦化層的多個側面、該夾層保護膜的多個開口以及該底保護膜的多個開口形成該些像素接觸孔。
  9. 如申請專利範圍第8項所述之方法，其中該頂平坦化層以及該底平坦化層各以一有機絕緣材料形成，且該底保護膜、該夾層保護膜及該頂保護膜各以一無機絕緣材料形成。
  10. 如申請專利範圍第8項所述之方法，更包含形成多個觸控接觸孔，該些觸控接觸孔穿過該夾層保護膜、該頂平坦化層以及該頂保護膜以暴露該些觸控感測線路，其中，穿過各個該些共用電極區塊之該些觸控感測線路中，其中一個該觸控感測線路暴露於其中一個該觸控接觸孔，並連接至相對應的其中一個該共用電極區塊，並且其餘的該些觸控感測線路藉由與該夾層保護膜、該頂平坦化層以及該頂保護膜重疊於相對應的該共用電極區塊，而穿過相對應的其中一個該共用電 極區塊，且該夾層保護膜、該頂平坦化層以及該頂保護膜設置於其餘的該些觸控感測線路及相對應的該共用電極區塊之間。
  11. 如申請專利範圍第9項所述之方法，更包含：形成多個觸控接觸孔，該些觸控接觸孔穿過該夾層保護膜、該頂平坦化層以及該頂保護膜以暴露該些觸控感測線路，其中，穿過各個該些共用電極區塊之該些觸控感測線路中，其中一個該觸控感測線路暴露於其中一個該觸控接觸孔，並連接至相對應的其中一個該共用電極區塊，並且其餘的該些觸控感測線路藉由與該夾層保護膜、該頂平坦化層以及該頂保護膜重疊於相對應的其中一個該共用電極區塊，而穿過相對應的其中一個該共用電極區塊，且該夾層保護膜、該頂平坦化層以及該頂保護膜設置於其餘的該些觸控感測線路及相對應的該共用電極區塊之間。
  12. 如申請專利範圍第8項所述之方法，其中以該頂平坦化層作為一遮罩，並透過一蝕刻製程而形成該底保護膜的該些開口以及該夾層保護膜的該些開口。
  13. 一種顯示器，具有多個觸控感測器，該顯示器包含：一基板；一薄膜電晶體，佈置於該基板，且該薄膜電晶體包含一電極；一第一保護膜，位於該薄膜電晶體，該第一保護膜包含一孔洞，且該第一保護膜的該孔洞暴露該薄膜電晶體的該電極的一部分； 一第一平坦化層，位於該第一保護膜以及該薄膜電晶體之上，該第一平坦化層包含一孔洞，且該第一平坦化層的該孔洞重疊於由該第一保護膜的該孔洞所暴露的該電極之該部分；一觸控感測線路，位於該第一平坦化層；一第二平坦化層，位於該觸控感測線路以及該第一平坦化層之上，該第二平坦化層覆蓋該第一平坦化層中由該第一平坦化層的該孔洞所暴露的一側面，而使一孔洞形成於該第二平坦化層中；一夾層保護膜，位於該第二平坦化層以及該觸控感測線路之間，其中該觸控感測線路佈置於該第一平坦化層；一像素電極，位於該第二平坦化層，該像素電極透過該第二平坦化層中的該孔洞、該第一平坦化層中的該孔洞以及該第一保護膜中的該孔洞，電性連接至該薄膜電晶體的該電極；一第二保護膜，位於該像素電極及該第二平坦化層上；以及一共用電極區塊，位於該像素電極之上，且該共用電極區塊電性連接至該觸控感測線路，其中，該夾層保護膜及該第二保護膜其中至少一者位於該共用電極區塊及該觸控感測線路之間。
  14. 如申請專利範圍第13項所述之顯示器，其中該像素電極接觸於該第二平坦化層中的該孔洞之一側面。
  15. 如申請專利範圍第13項所述之顯示器，其中：該夾層保護膜覆蓋該第一平坦化層的該孔洞的該側面。
  16. 如申請專利範圍第15項所述之顯示器，其中該第一保護膜、該夾層保護膜以及該第二保護膜包含多個無機絕緣材料。
  17. 如申請專利範圍第16項所述之顯示器，其中該夾層保護膜降低該觸控感測線路的氧化。
  18. 如申請專利範圍第13項所述之顯示器，其中該第一平坦化層及該第二平坦化層包含多個有機絕緣材料。
  19. 如申請專利範圍第13項所述之顯示器，其中該共用電極區塊透過該第二平坦化層中的另一個孔洞電性連接至該觸控感測線路。
  20. 如申請專利範圍第19項所述之顯示器，其中該第二保護膜與該第二平坦化層的另一個孔洞之一側面接觸。
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