TWI692385B - 化學機械硏磨所用的方法、系統與硏磨墊 - Google Patents
化學機械硏磨所用的方法、系統與硏磨墊 Download PDFInfo
- Publication number
- TWI692385B TWI692385B TW104122052A TW104122052A TWI692385B TW I692385 B TWI692385 B TW I692385B TW 104122052 A TW104122052 A TW 104122052A TW 104122052 A TW104122052 A TW 104122052A TW I692385 B TWI692385 B TW I692385B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing pad
- substrate
- polishing
- support
- pad
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 354
- 239000000126 substance Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 224
- 239000002002 slurry Substances 0.000 claims description 13
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 229920002635 polyurethane Polymers 0.000 claims description 5
- 239000004814 polyurethane Substances 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 3
- 238000010408 sweeping Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 42
- 238000007517 polishing process Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 239000000945 filler Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- 230000032798 delamination Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000001303 quality assessment method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/334,608 | 2014-07-17 | ||
US14/334,608 US10076817B2 (en) | 2014-07-17 | 2014-07-17 | Orbital polishing with small pad |
US201462039840P | 2014-08-20 | 2014-08-20 | |
US14/464,633 | 2014-08-20 | ||
US14/464,633 US10207389B2 (en) | 2014-07-17 | 2014-08-20 | Polishing pad configuration and chemical mechanical polishing system |
US62/039,840 | 2014-08-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201609313A TW201609313A (zh) | 2016-03-16 |
TWI692385B true TWI692385B (zh) | 2020-05-01 |
Family
ID=55078940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104122052A TWI692385B (zh) | 2014-07-17 | 2015-07-07 | 化學機械硏磨所用的方法、系統與硏磨墊 |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP2017522733A (ko) |
KR (1) | KR102399064B1 (ko) |
CN (2) | CN106463383B (ko) |
TW (1) | TWI692385B (ko) |
WO (1) | WO2016010866A1 (ko) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108883515A (zh) * | 2016-03-24 | 2018-11-23 | 应用材料公司 | 用于化学机械抛光的纹理化的小垫 |
CN109155249B (zh) * | 2016-03-25 | 2023-06-23 | 应用材料公司 | 局部区域研磨系统以及用于研磨系统的研磨垫组件 |
JP6792988B2 (ja) * | 2016-09-30 | 2020-12-02 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法、並びに、研磨加工品の製造方法 |
SG11201902651QA (en) * | 2016-10-18 | 2019-05-30 | Ebara Corp | Substrate processing control system, substrate processing control method, and program |
WO2018164804A1 (en) * | 2017-03-06 | 2018-09-13 | Applied Materials, Inc. | Spiral and concentric movement designed for cmp location specific polish (lsp) |
KR102432581B1 (ko) * | 2017-07-11 | 2022-08-17 | 주식회사 케이씨텍 | 순환 운동 유닛 및 이를 포함하는 기판 연마 장치 |
CN107253131A (zh) * | 2017-07-31 | 2017-10-17 | 深圳市汉匠自动化科技有限公司 | 一种3d屏幕研磨机 |
KR20190014307A (ko) * | 2017-08-02 | 2019-02-12 | 새솔다이아몬드공업 주식회사 | 에지부분이 라운드된 연마패드 드레서 및 그 연마장치 |
JP6986930B2 (ja) * | 2017-11-07 | 2021-12-22 | 株式会社荏原製作所 | 基板研磨装置および研磨方法 |
CN208584374U (zh) * | 2018-02-26 | 2019-03-08 | 凯斯科技股份有限公司 | 基板处理装置 |
KR102564114B1 (ko) * | 2018-05-16 | 2023-08-07 | 주식회사 케이씨텍 | 기판 처리 장치 |
WO2020106904A1 (en) * | 2018-11-21 | 2020-05-28 | Applied Materials, Inc. | Offset head-spindle for chemical mechanical polishing |
KR20210100702A (ko) * | 2018-12-20 | 2021-08-17 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 |
CN112171504B (zh) * | 2020-09-30 | 2021-08-10 | 车艾建 | 一种晶圆蚀刻背面研磨机 |
USD1027345S1 (en) | 2022-06-03 | 2024-05-14 | Entegris, Inc. | Polyvinyl alcohol pad |
WO2023235574A1 (en) * | 2022-06-03 | 2023-12-07 | Entegris, Inc. | Devices for cleaning substrates and related methods |
USD1022364S1 (en) | 2022-06-03 | 2024-04-09 | Entegris, Inc. | Polyvinyl alcohol pad |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5785584A (en) * | 1996-08-30 | 1998-07-28 | International Business Machines Corporation | Planarizing apparatus with deflectable polishing pad |
US6354913B1 (en) * | 1997-05-07 | 2002-03-12 | Kabushiki Kaisha Toshiba | Abrasive and method for polishing semiconductor substrate |
TW550143B (en) * | 1999-03-26 | 2003-09-01 | Applied Materials Inc | A carrier head for providing a polishing slurry |
US20030168169A1 (en) * | 2000-08-03 | 2003-09-11 | Akira Ishikawa | Chemical-mechanical polishing apparatus, polishing pad and method for manufacturing semiconductor device |
TWI299015B (en) * | 2004-06-04 | 2008-07-21 | Samsung Electronics Co Ltd | Carrier head of chemical mechanical polishing apparatus having barriers dividing pressure chamber into a plurality of pressure zones |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5274960A (en) * | 1990-10-23 | 1994-01-04 | Speedfam Corporation | Uniform velocity double sided finishing machine |
MY114512A (en) * | 1992-08-19 | 2002-11-30 | Rodel Inc | Polymeric substrate with polymeric microelements |
US5232875A (en) * | 1992-10-15 | 1993-08-03 | Micron Technology, Inc. | Method and apparatus for improving planarity of chemical-mechanical planarization operations |
US5558563A (en) * | 1995-02-23 | 1996-09-24 | International Business Machines Corporation | Method and apparatus for uniform polishing of a substrate |
US5897424A (en) * | 1995-07-10 | 1999-04-27 | The United States Of America As Represented By The Secretary Of Commerce | Renewable polishing lap |
JP3329644B2 (ja) * | 1995-07-21 | 2002-09-30 | 株式会社東芝 | 研磨パッド、研磨装置及び研磨方法 |
JPH10329012A (ja) * | 1997-03-21 | 1998-12-15 | Canon Inc | 研磨装置および研磨方法 |
US5964653A (en) * | 1997-07-11 | 1999-10-12 | Applied Materials, Inc. | Carrier head with a flexible membrane for a chemical mechanical polishing system |
KR100443330B1 (ko) * | 1998-07-31 | 2004-08-09 | 쎄미콘테크 주식회사 | 화학 기계적 연마 방법 및 장치 |
JP2000158327A (ja) * | 1998-12-02 | 2000-06-13 | Rohm Co Ltd | 化学的機械的研磨用研磨布およびそれを用いた化学的機械的研磨装置 |
JP2000218514A (ja) * | 1999-02-02 | 2000-08-08 | Nikon Corp | 研磨装置及び研磨方法 |
JP2000301450A (ja) * | 1999-04-19 | 2000-10-31 | Rohm Co Ltd | Cmp研磨パッドおよびそれを用いたcmp処理装置 |
JP2001118812A (ja) * | 1999-08-09 | 2001-04-27 | Nikon Corp | 化学機械研磨装置および半導体デバイス製造方法 |
US6343975B1 (en) * | 1999-10-05 | 2002-02-05 | Peter Mok | Chemical-mechanical polishing apparatus with circular motion pads |
US20020037649A1 (en) | 1999-12-15 | 2002-03-28 | Matsushita Electric Industrial Co., Ltd. | Method for carrying out planarization processing |
JP2001237206A (ja) * | 1999-12-15 | 2001-08-31 | Matsushita Electric Ind Co Ltd | 平坦化加工方法 |
US7255637B2 (en) * | 2000-09-08 | 2007-08-14 | Applied Materials, Inc. | Carrier head vibration damping |
US6676497B1 (en) * | 2000-09-08 | 2004-01-13 | Applied Materials Inc. | Vibration damping in a chemical mechanical polishing system |
CN1287042A (zh) * | 2000-09-12 | 2001-03-14 | 王楠 | 平动公转磨头 |
JP3663348B2 (ja) * | 2000-09-26 | 2005-06-22 | Towa株式会社 | 研磨装置及び研磨方法 |
US6561881B2 (en) * | 2001-03-15 | 2003-05-13 | Oriol Inc. | System and method for chemical mechanical polishing using multiple small polishing pads |
JP2004074310A (ja) * | 2002-08-12 | 2004-03-11 | Nikon Corp | 研磨体、この研磨体を備えた研磨装置、この研磨装置を用いた半導体デバイス製造方法及びこの半導体デバイス製造方法により製造された半導体デバイス |
JP2006026844A (ja) * | 2004-07-20 | 2006-02-02 | Fujitsu Ltd | ポリッシングパッド、それを備えた研磨装置及び貼り付け装置 |
KR100634450B1 (ko) * | 2005-01-06 | 2006-10-16 | 삼성전자주식회사 | 화학적 기계적 연마 장치 및 이에 사용되는 플레이튼 |
CN101484979A (zh) * | 2006-05-03 | 2009-07-15 | 圣劳伦斯纳米科技有限公司 | 能够抛光单个管芯的用于对大尺寸晶片进行化学机械抛光的方法及装置 |
CN100478138C (zh) * | 2006-07-03 | 2009-04-15 | 三芳化学工业股份有限公司 | 具有表面纹路的研磨垫 |
JP2008290197A (ja) * | 2007-05-25 | 2008-12-04 | Nihon Micro Coating Co Ltd | 研磨パッド及び方法 |
JP5120697B2 (ja) * | 2007-12-18 | 2013-01-16 | 株式会社ニコン | 研磨装置 |
JP2010064196A (ja) * | 2008-09-11 | 2010-03-25 | Ebara Corp | 基板研磨装置および基板研磨方法 |
JP5347980B2 (ja) * | 2010-01-14 | 2013-11-20 | 住友金属鉱山株式会社 | 金属化ポリイミドフィルム、及びそれを用いたフレキシブル配線板 |
JP3163748U (ja) * | 2010-08-19 | 2010-10-28 | 新日鉄マテリアルズ株式会社 | Cmpドレッサー |
KR101941586B1 (ko) | 2011-01-03 | 2019-01-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 압력 제어되는 폴리싱 플래튼 |
KR101387923B1 (ko) * | 2012-08-27 | 2014-04-22 | 주식회사 케이씨텍 | 화학 기계적 연마 장치의 캐리어 헤드용 멤브레인 및 이를 구비한 캐리어 헤드 |
KR101411836B1 (ko) * | 2012-11-27 | 2014-06-25 | 주식회사 케이씨텍 | 화학 기계적 연마 장치의 캐리어 헤드용 멤브레인 |
-
2015
- 2015-07-07 TW TW104122052A patent/TWI692385B/zh active
- 2015-07-10 JP JP2017502673A patent/JP2017522733A/ja not_active Ceased
- 2015-07-10 WO PCT/US2015/040065 patent/WO2016010866A1/en active Application Filing
- 2015-07-10 CN CN201580030724.3A patent/CN106463383B/zh active Active
- 2015-07-10 CN CN202010973754.0A patent/CN112123196B/zh active Active
- 2015-07-10 KR KR1020177002230A patent/KR102399064B1/ko active IP Right Grant
-
2020
- 2020-02-05 JP JP2020017600A patent/JP6955592B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5785584A (en) * | 1996-08-30 | 1998-07-28 | International Business Machines Corporation | Planarizing apparatus with deflectable polishing pad |
US6354913B1 (en) * | 1997-05-07 | 2002-03-12 | Kabushiki Kaisha Toshiba | Abrasive and method for polishing semiconductor substrate |
TW550143B (en) * | 1999-03-26 | 2003-09-01 | Applied Materials Inc | A carrier head for providing a polishing slurry |
US20030168169A1 (en) * | 2000-08-03 | 2003-09-11 | Akira Ishikawa | Chemical-mechanical polishing apparatus, polishing pad and method for manufacturing semiconductor device |
TWI299015B (en) * | 2004-06-04 | 2008-07-21 | Samsung Electronics Co Ltd | Carrier head of chemical mechanical polishing apparatus having barriers dividing pressure chamber into a plurality of pressure zones |
Also Published As
Publication number | Publication date |
---|---|
CN106463383B (zh) | 2020-10-16 |
JP6955592B2 (ja) | 2021-10-27 |
JP2020092276A (ja) | 2020-06-11 |
CN112123196A (zh) | 2020-12-25 |
CN112123196B (zh) | 2023-05-30 |
TW201609313A (zh) | 2016-03-16 |
KR102399064B1 (ko) | 2022-05-16 |
JP2017522733A (ja) | 2017-08-10 |
KR20170032325A (ko) | 2017-03-22 |
WO2016010866A1 (en) | 2016-01-21 |
CN106463383A (zh) | 2017-02-22 |
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