TWI692385B - Method, system and polishing pad for chemical mechancal polishing - Google Patents
Method, system and polishing pad for chemical mechancal polishing Download PDFInfo
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- TWI692385B TWI692385B TW104122052A TW104122052A TWI692385B TW I692385 B TWI692385 B TW I692385B TW 104122052 A TW104122052 A TW 104122052A TW 104122052 A TW104122052 A TW 104122052A TW I692385 B TWI692385 B TW I692385B
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- 238000005498 polishing Methods 0.000 title claims abstract description 354
- 239000000126 substance Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 224
- 239000002002 slurry Substances 0.000 claims description 13
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 229920002635 polyurethane Polymers 0.000 claims description 5
- 239000004814 polyurethane Substances 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 3
- 238000010408 sweeping Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 42
- 238000007517 polishing process Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 239000000945 filler Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- 230000032798 delamination Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000001303 quality assessment method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
本發明係關於一種化學機械研磨(chemical mechanical polishing;CMP)系統之架構。 The invention relates to a structure of a chemical mechanical polishing (CMP) system.
通常藉由在矽晶圓上連續沉積導電、半導電或絕緣層來在基板上形成積體電路。一個製造步驟涉及在非平面表面上方沉積填料層及平坦化該填料層。對於某些應用,平坦化填料層直至曝露圖案化層之頂表面。舉例而言,可在圖案化絕緣層上沉積導電填料層以填充絕緣層中的溝槽或孔。在平坦化之後,絕緣層之凸起圖案之間剩餘的金屬層之部分形成通孔、插塞及接線,該等通孔、插塞及接線在基板上的薄膜電路之間提供導電路徑。對於諸如氧化物研磨之其他應用,平坦化填料層直至在非平面表面上留下預定厚度。另外,光微影術通常需要基板表面之平坦化。 Generally, an integrated circuit is formed on a substrate by continuously depositing conductive, semiconductive, or insulating layers on a silicon wafer. One manufacturing step involves depositing a filler layer over the non-planar surface and planarizing the filler layer. For some applications, the filler layer is planarized until the top surface of the patterned layer is exposed. For example, a conductive filler layer can be deposited on the patterned insulating layer to fill the trench or hole in the insulating layer. After planarization, portions of the remaining metal layer between the raised patterns of the insulating layer form through holes, plugs, and wires, and these through holes, plugs, and wires provide conductive paths between the thin film circuits on the substrate. For other applications such as oxide grinding, the filler layer is planarized until a predetermined thickness is left on the non-planar surface. In addition, photolithography usually requires planarization of the substrate surface.
化學機械研磨(CMP)係一種公認的平坦化方法。此平坦化方法通常需要在承載頭或研磨頭上安裝基板。通常抵靠旋轉研磨墊置放基板之曝露表面。承載頭在基板上提供可控負載以抵靠研磨墊推動該承載頭。通常將磨蝕研磨漿供應至研磨墊之表面。 Chemical mechanical polishing (CMP) is a recognized method of planarization. This planarization method usually requires mounting the substrate on the carrier head or the grinding head. The exposed surface of the substrate is usually placed against the rotating polishing pad. The carrier head provides a controllable load on the substrate to push the carrier head against the polishing pad. Abrasive slurry is usually supplied to the surface of the polishing pad.
本發明提供用於基板研磨(例如,「修整研磨」)之系統及設備,其中在基板之前表面之受限區域上執行研磨。 The present invention provides a system and apparatus for substrate polishing (eg, "dressing polishing"), where the polishing is performed on a limited area of the front surface of the substrate.
在一個態樣中,化學機械研磨系統包括基板支撐件、可移動襯墊支撐件及驅動系統。基板支撐件經配置以在研磨操作期間在實質固定角度定向上固持基板。可移動襯墊支撐件經配置以固持研磨墊,該研磨墊具有不大於基板之半徑的直徑。驅動系統經配置以在研磨墊與基板之上表面接觸的同時在軌道運動中移動襯墊支撐件及研磨墊。軌道運動具有不大於研磨墊之直徑的軌道半徑且在相對於基板的固定角度定向上維持研磨墊。 In one aspect, the chemical mechanical polishing system includes a substrate support, a movable pad support, and a drive system. The substrate support is configured to hold the substrate in a substantially fixed angular orientation during the grinding operation. The movable pad support is configured to hold the polishing pad, the polishing pad having a diameter no greater than the radius of the substrate. The drive system is configured to move the pad support and the polishing pad in orbital motion while the polishing pad is in contact with the upper surface of the substrate. The orbital motion has an orbital radius no greater than the diameter of the polishing pad and maintains the polishing pad in a fixed angular orientation relative to the substrate.
實行方案可包括以下特徵中的一或更多者。研磨墊可具有接觸基板的接觸區域。接觸區域之直徑可介於基板之直徑的約1%與10%之間。軌道半徑可介於接觸區域之直徑的約5%與50%之間。驅動系統可包括襯墊支撐頭中的凹部、延伸至凹部中的可旋轉凸輪及連至凸輪的馬達。連桿組可將襯墊支撐頭耦接至固定支撐件以防止襯墊支撐頭之旋轉。定位驅動系統可跨基板橫向移動襯墊支撐頭。定位驅動系統可包括兩個線性致動器,該等線性致動器經配置以在兩個垂直方向上移動襯墊支撐頭。 The implementation plan may include one or more of the following features. The polishing pad may have a contact area that contacts the substrate. The diameter of the contact area may be between about 1% and 10% of the diameter of the substrate. The track radius may be between about 5% and 50% of the diameter of the contact area. The drive system may include a recess in the cushion support head, a rotatable cam extending into the recess, and a motor connected to the cam. The link set can couple the pad support head to the fixed support to prevent rotation of the pad support head. The positioning drive system can move the pad support head laterally across the substrate. The positioning drive system may include two linear actuators configured to move the pad support head in two vertical directions.
在另一態樣中,化學機械研磨系統包括基板支撐件、研磨墊、可移動襯墊支撐件及驅動系統。基板支撐件經配置以在研磨操作期間在實質固定角度定向上固持 基板。研磨墊具有接觸基板的接觸區域,該接觸區域具有不大於基板之半徑的直徑。可移動襯墊支撐件經配置以固持研磨墊。驅動系統經配置以在研磨墊之接觸區域與基板之上表面接觸的同時在軌道運動中移動襯墊支撐件及研磨墊。軌道運動具有不大於研磨墊之直徑的軌道半徑且在相對於基板的固定角度定向上維持研磨墊。 In another aspect, the chemical mechanical polishing system includes a substrate support, a polishing pad, a movable pad support, and a drive system. The substrate support is configured to be held in a substantially fixed angular orientation during the grinding operation Substrate. The polishing pad has a contact area that contacts the substrate, the contact area having a diameter no greater than the radius of the substrate. The movable pad support is configured to hold the polishing pad. The drive system is configured to move the pad support and the polishing pad in orbital motion while the contact area of the polishing pad is in contact with the upper surface of the substrate. The orbital motion has an orbital radius no greater than the diameter of the polishing pad and maintains the polishing pad in a fixed angular orientation relative to the substrate.
實行方案可包括以下特徵中的一或更多者。研磨墊可包括自層的突起部分,且突起部分之底表面可提供接觸區域。壓敏黏合劑或夾持件之至少一者可在襯墊支撐件上固持研磨墊。接觸區域可為碟形或弧形。 The implementation plan may include one or more of the following features. The polishing pad may include a protruding portion from the layer, and the bottom surface of the protruding portion may provide a contact area. At least one of the pressure-sensitive adhesive or the clamping member can hold the polishing pad on the pad support. The contact area may be dish-shaped or arc-shaped.
在另一態樣中,化學機械研磨之方法包括:使研磨墊與基板在接觸區域內產生接觸,該接觸區域具有不大於基板之半徑的直徑;及在研磨墊之接觸區域與基板之上表面接觸的同時產生研磨墊與基板之間的相對運動。相對運動包括軌道運動,該軌道運動具有不大於研磨墊之直徑的軌道半徑。在軌道運動期間,在相對於基板的實質固定角度定向上維持研磨墊。 In another aspect, the method of chemical mechanical polishing includes: contacting the polishing pad with the substrate in a contact area, the contact area having a diameter no greater than the radius of the substrate; and contacting the polishing pad with the upper surface of the substrate At the same time, the relative movement between the polishing pad and the substrate is generated. The relative motion includes an orbital motion having an orbital radius not greater than the diameter of the polishing pad. During orbital movement, the polishing pad is maintained in a substantially fixed angular orientation relative to the substrate.
實行方案可包括以下特徵中的一或更多者。在軌道運動期間,可在固定橫向位置中固持基板。在軌道運動期間,可以不大於軌道運動之瞬時速度的約5%的速度跨基板橫向掃掠研磨墊。 The implementation plan may include one or more of the following features. During orbital movement, the substrate can be held in a fixed lateral position. During orbital motion, the polishing pad may be swept laterally across the substrate at a speed no greater than about 5% of the instantaneous speed of the orbital motion.
在另一態樣中,化學機械研磨系統包括:基板支撐件,經配置以在研磨操作期間固持基板;研磨墊支撐件;研磨墊,由襯墊支撐件固持;及驅動系統,經配置以 產生基板支撐件與研磨墊支撐件之間的相對運動。研磨墊具有緊固至研磨墊支撐件的上部分及自上部分向下凸出的下部分。上部分之上表面毗連研磨墊支撐件。下部分之底表面提供在研磨期間接觸基板之頂表面的接觸表面。接觸表面比基板之頂表面小。上部分具有第一橫向尺寸且下部分具有第二橫向尺寸,該第二橫向尺寸比該第一橫向尺寸小。 In another aspect, the chemical mechanical polishing system includes: a substrate support configured to hold the substrate during the polishing operation; a polishing pad support; a polishing pad held by the pad support; and a drive system configured to A relative movement between the substrate support and the polishing pad support is generated. The polishing pad has an upper portion fastened to the polishing pad support and a lower portion protruding downward from the upper portion. The upper surface of the upper part adjoins the polishing pad support. The bottom surface of the lower portion provides a contact surface that contacts the top surface of the substrate during grinding. The contact surface is smaller than the top surface of the substrate. The upper portion has a first lateral dimension and the lower portion has a second lateral dimension, which is smaller than the first lateral dimension.
實行方案可包括以下特徵中的一或更多者。研磨墊支撐件可包括板材,該板材具有跨越研磨墊的表面,且研磨墊之上部分之實質整個上表面可毗連板材之表面。黏合劑可在襯墊支撐件上固持研磨墊。研磨墊支撐件可包括環形構件,研磨墊之上部分之上表面之周邊部分可毗連環形構件,及周邊部分內的上表面之剩餘部分可不接觸研磨墊支撐件。一或更多個夾持件可在襯墊支撐件上固持研磨墊之周邊區段。研磨墊之上部分可包括撓曲區段,該撓曲區段比接觸表面上方的研磨墊之區段具有更大可撓性。研磨墊之上部分可包括聚對苯二甲酸乙二酯片材。 The implementation plan may include one or more of the following features. The polishing pad support may include a sheet material having a surface spanning the polishing pad, and substantially the entire upper surface of the upper portion of the polishing pad may abut the surface of the sheet material. The adhesive can hold the polishing pad on the pad support. The polishing pad support may include an annular member, the peripheral portion of the upper surface of the upper portion of the polishing pad may adjoin the annular member, and the remaining portion of the upper surface in the peripheral portion may not contact the polishing pad support. One or more clamping members may hold the peripheral section of the polishing pad on the pad support. The upper portion of the polishing pad may include a flexure section that is more flexible than the section of the polishing pad above the contact surface. The upper portion of the polishing pad may include a polyethylene terephthalate sheet.
可在研磨墊之下部分之接觸表面上形成用於漿料輸送的複數個槽。複數個槽可具有比下部分之厚度小的深度。複數個槽中的至少一些可跨研磨墊之下部分完全延伸。壓力腔室可由研磨墊支撐件之內部腔室形成,該腔室可具有面向基板的開口,且可藉由研磨墊耦接至研磨墊支撐件來密封該開口。可在研磨墊之上表面中形成複數個 孔,且自研磨墊支撐件之複數個凸部可裝配至複數個孔中以相對於研磨墊支撐件對準下部分。 A plurality of grooves for slurry transport can be formed on the contact surface of the lower part of the polishing pad. The plurality of grooves may have a smaller depth than the thickness of the lower part. At least some of the plurality of grooves may extend completely across the portion below the polishing pad. The pressure chamber may be formed by an internal chamber of the polishing pad support, the chamber may have an opening facing the substrate, and the opening may be sealed by the polishing pad coupled to the polishing pad support. Can form multiple in the upper surface of the polishing pad Holes, and the plurality of protrusions from the polishing pad support can be fitted into the plurality of holes to align the lower portion with respect to the polishing pad support.
在另一態樣中,研磨墊包括上部分及一或更多個下部分。上部分具有附接於襯墊載體的上表面及第一橫向尺寸。一或更多個下部分自上部分向下凸出。一或更多個下部分之底表面提供在化學機械研磨期間接觸基板的接觸表面。每一下部分具有比第一橫向尺寸小的第二橫向尺寸。自一或更多個下部分的接觸表面之總表面積不超過上表面之表面積的10%。 In another aspect, the polishing pad includes an upper portion and one or more lower portions. The upper portion has an upper surface attached to the cushion carrier and a first lateral dimension. One or more lower portions protrude downward from the upper portion. The bottom surface of the one or more lower portions provides a contact surface that contacts the substrate during chemical mechanical polishing. Each lower portion has a second lateral dimension smaller than the first lateral dimension. The total surface area of the contact surface from one or more lower portions does not exceed 10% of the surface area of the upper surface.
實行方案可包括以下特徵中的一或更多者。至少下部分可包括聚合物主體,該聚合物主體具有實質均勻組成物且具有分佈在該主體內之複數個孔。研磨墊可包括研磨層,且可在研磨層中形成向下凸出的下部分。襯墊可包括比研磨層軟的背托層。可在一或更多個下部分之底表面上形成用於漿料輸送的槽。一或更多個下部分可由單個凸部組成。研磨層可包括可撓性橫向區段,該橫向區段比組成研磨區域的橫向區段更薄。下部分可包括微孔聚胺基甲酸酯。 The implementation plan may include one or more of the following features. At least the lower portion may include a polymer body having a substantially uniform composition and having a plurality of pores distributed within the body. The polishing pad may include a polishing layer, and a lower portion protruding downward may be formed in the polishing layer. The liner may include a backing layer that is softer than the abrasive layer. Grooves for slurry transport may be formed on the bottom surface of one or more lower portions. One or more lower portions may be composed of a single convex portion. The abrasive layer may include a flexible lateral section that is thinner than the lateral sections that make up the abrasive region. The lower part may include microporous polyurethane.
在另一態樣中,化學機械研磨系統包括:基板支撐件,經配置以在研磨操作期間固持實質圓形基板;研磨墊支撐件;研磨墊,由襯墊支撐件固持;及驅動系統,經配置以產生基板支撐件與研磨墊支撐件之間的相對運動。研磨墊具有弧形接觸區域,且由弧形接觸區域所界定 之弧之中心點與由基板支撐件所固持之基板之中心實質上對準。 In another aspect, a chemical mechanical polishing system includes: a substrate support configured to hold a substantially circular substrate during a polishing operation; a polishing pad support; a polishing pad held by a pad support; and a drive system, via It is configured to generate relative movement between the substrate support and the polishing pad support. The polishing pad has an arc-shaped contact area and is defined by the arc-shaped contact area The center point of the arc is substantially aligned with the center of the substrate held by the substrate support.
實行方案可包括以下特徵中的一或更多者。由弧形接觸區域所界定之弧之寬度可介於1mm與3mm之間,且弧之長度可等於或大於30mm。壓敏黏合劑或夾持件之至少一者可在襯墊支撐頭上固持研磨墊。基板支撐件與研磨墊支撐件之間的相對運動可為軌道運動,該軌道運動在固定角度定向上維持研磨墊支撐件。相對運動可圍繞基板之中心旋轉。 The implementation plan may include one or more of the following features. The width of the arc defined by the arc-shaped contact area may be between 1 mm and 3 mm, and the length of the arc may be equal to or greater than 30 mm. At least one of the pressure-sensitive adhesive or the clamping member can hold the polishing pad on the pad support head. The relative movement between the substrate support and the polishing pad support may be an orbital motion that maintains the polishing pad support in a fixed angle orientation. The relative motion can rotate around the center of the substrate.
在另一態樣中,研磨組件包括研磨墊支撐件及由襯墊支撐件固持的研磨墊。研磨墊支撐件包括環形構件及具有面向基板的開口之凹部。研磨墊具有在研磨期間接觸基板的研磨表面。將研磨墊之周邊部分垂直固定至環形構件及周邊部分內的研磨墊之剩餘部分自由垂直。藉由研磨墊密封研磨墊支撐件之面向基板的開口以界定可加壓腔室來在研磨墊之背表面上提供可調壓力。 In another aspect, the polishing assembly includes a polishing pad support and a polishing pad held by the pad support. The polishing pad support includes an annular member and a recess having an opening facing the substrate. The polishing pad has a polishing surface that contacts the substrate during polishing. The peripheral part of the polishing pad is vertically fixed to the ring member and the remaining part of the polishing pad in the peripheral part is free and vertical. The adjustable pressure is provided on the back surface of the polishing pad by sealing the opening of the polishing pad support facing the substrate by the polishing pad to define a pressurizable chamber.
實行方案可包括以下特徵中的一或更多者。黏合劑可將研磨墊之周邊部分緊固至環形構件。一或更多個夾持件可在環形構件上固持研磨墊之周邊區段。研磨墊支撐件可包括基座及緊固至基座的薄膜,基座與薄膜之間的容積可界定第二可加壓腔室以使得薄膜之外表面在研磨墊之背表面上提供第二可調壓力。薄膜及第二可加壓腔室可經配置以使得第二可加壓腔室中的壓力控制研磨表面抵靠基板的負載區域之橫向尺寸。 The implementation plan may include one or more of the following features. The adhesive can fasten the peripheral portion of the polishing pad to the ring member. One or more clamps can hold the peripheral section of the polishing pad on the ring member. The polishing pad support may include a base and a film secured to the base, the volume between the base and the film may define a second pressurizable chamber so that the outer surface of the film provides a second on the back surface of the polishing pad Adjustable pressure. The membrane and the second pressurizable chamber may be configured such that the pressure in the second pressurizable chamber controls the lateral dimension of the load area of the abrasive surface against the substrate.
在另一態樣中,研磨墊包括上部分、一或更多個下部分及複數個孔。上部分具有附接於襯墊載體的上表面及第一橫向尺寸。一或更多個下部分自上部分向下凸出。一或更多個下部分之底表面提供在化學機械研磨期間接觸基板的接觸表面。每一下部分具有比第一橫向尺寸小的第二橫向尺寸以使得上部分凸出通過下部分之所有橫向側面。複數個孔位於上部分之上表面中以自襯墊載體接收凸部。在下部分橫向向外的研磨墊之上部分之區段中安置孔。 In another aspect, the polishing pad includes an upper portion, one or more lower portions, and a plurality of holes. The upper portion has an upper surface attached to the cushion carrier and a first lateral dimension. One or more lower portions protrude downward from the upper portion. The bottom surface of the one or more lower portions provides a contact surface that contacts the substrate during chemical mechanical polishing. Each lower portion has a second lateral dimension smaller than the first lateral dimension so that the upper portion protrudes through all lateral sides of the lower portion. A plurality of holes are located in the upper surface of the upper portion to receive the protrusion from the cushion carrier. A hole is placed in a section of the upper portion of the polishing pad laterally outward from the lower portion.
實行方案可包括以下特徵中的一或更多者。可在研磨墊之轉角處安置複數個孔。研磨墊可為長方形。一或更多個下部分可具有弧形接觸表面。可在研磨墊之下部分之接觸表面上形成用於漿料輸送的複數個槽。 The implementation plan may include one or more of the following features. Multiple holes can be placed at the corners of the polishing pad. The polishing pad may be rectangular. One or more lower portions may have curved contact surfaces. A plurality of grooves for slurry transport can be formed on the contact surface of the lower part of the polishing pad.
本發明之優勢可包括以下中的一或更多者。 The advantages of the present invention may include one or more of the following.
可使用經歷軌道運動的小襯墊補償非同心研磨均勻性。軌道運動可在避免具有不欲研磨之區域的襯墊之重疊的同時提供可接受之研磨速率,從而改良基板均勻性。另外,與旋轉相比,維持研磨墊相對於基板之固定定向的軌道運動可跨正研磨之區域提供更加均勻的研磨速率。 Small pads that experience orbital motion can be used to compensate for non-concentric grinding uniformity. The orbital motion can provide an acceptable polishing rate while avoiding overlap of pads with areas not to be polished, thereby improving substrate uniformity. In addition, orbital motion that maintains a fixed orientation of the polishing pad relative to the substrate can provide a more uniform polishing rate across the area being polished compared to rotation.
使得緊固至研磨墊支撐件的研磨墊之頂部部分比與基板接觸的底部突起部分在橫向上更寬可增加襯墊連接至支撐件(例如,藉由壓敏黏合劑連接)之可用區域。此可使得研磨墊較不容易於研磨操作期間分層。 Making the top portion of the polishing pad fastened to the polishing pad support wider in the lateral direction than the bottom protruding portion in contact with the substrate can increase the available area for the pad to connect to the support (for example, by a pressure sensitive adhesive). This may make the polishing pad less susceptible to delamination during the polishing operation.
具有弧形接觸區域接觸基板的研磨墊可在維持研磨區域之令人滿意的徑向解析度的同時提供改良的研磨速率。 A polishing pad having an arc-shaped contact area contacting the substrate can provide an improved polishing rate while maintaining a satisfactory radial resolution of the polishing area.
對準特徵可確保相對於襯墊支撐件在已知位置中橫向置放研磨墊之受限接觸區域,從而減小研磨基板之非所欲區域的可能性。 The alignment feature may ensure that the limited contact area of the polishing pad is placed laterally in a known position relative to the pad support, thereby reducing the possibility of polishing undesired areas of the substrate.
提供撓曲之研磨墊的一部分可減小研磨墊之接觸表面之部分的撓曲,從而改良所研磨區域與操作者所預期相匹配的可能性。 Providing a portion of the deflecting polishing pad can reduce the deflection of the portion of the polishing pad that contacts the surface, thereby improving the likelihood that the polished area matches the operator's expectations.
研磨墊之凸部中的槽可促進漿料之輸送,且因此可改良研磨速率。 The grooves in the convex portions of the polishing pad can facilitate the transport of the slurry, and thus can improve the polishing rate.
未接觸基板之研磨墊的一部分可由較低成本材料形成,從而降低襯墊總成本。 A portion of the polishing pad that is not in contact with the substrate can be formed from lower cost materials, thereby reducing the total cost of the pad.
容許控制抵靠基板負載之接觸區域之部分尺寸的襯墊載體容許負載區域與待研磨之點位尺寸相匹配,從而在避免研磨基板之非所欲區域的同時改良產量。 A liner carrier that allows control of the size of a portion of the contact area against the substrate load allows the load area to match the size of the point to be polished, thereby improving yield while avoiding grinding undesired areas of the substrate.
總體而言,可減少基板之非均勻研磨,且可改良基板之所得平坦度及光潔度。 Overall, non-uniform polishing of the substrate can be reduced, and the resulting flatness and finish of the substrate can be improved.
本發明之其他態樣、特徵及優勢將自描述及圖式以及自申請專利範圍顯而易見。 Other aspects, features and advantages of the present invention will be apparent from the description and drawings and from the scope of patent application.
5‧‧‧接觸區域/碟形幾何形狀 5‧‧‧Contact area/dish geometry
10‧‧‧基板 10‧‧‧ substrate
12‧‧‧表面 12‧‧‧Surface
20‧‧‧軌道半徑 20‧‧‧ Orbit radius
22‧‧‧接觸區域直徑 22‧‧‧Diameter of contact area
60‧‧‧埠 60‧‧‧ port
65‧‧‧研磨液 65‧‧‧Slurry
91‧‧‧中央處理單元 91‧‧‧Central Processing Unit
92‧‧‧記憶體 92‧‧‧Memory
93‧‧‧支援電路 93‧‧‧Support circuit
99‧‧‧控制器 99‧‧‧Controller
100‧‧‧研磨設備 100‧‧‧Grinding equipment
105‧‧‧基板支撐件 105‧‧‧ substrate support
106‧‧‧真空夾盤/基板支撐件 106‧‧‧Vacuum chuck/substrate support
110‧‧‧研磨墊 110‧‧‧Abrasive pad
111‧‧‧夾持組件 111‧‧‧Clamping assembly
112‧‧‧環形夾持環/弧形夾持件 112‧‧‧Annular clamping ring/arc clamping part
113‧‧‧致動器 113‧‧‧Actuator
114‧‧‧凸緣 114‧‧‧Flange
116‧‧‧上表面 116‧‧‧Upper surface
122‧‧‧腔室 122‧‧‧ chamber
124‧‧‧埠 124‧‧‧ port
129‧‧‧泵 129‧‧‧Pump
131‧‧‧保持器 131‧‧‧ retainer
200‧‧‧研磨墊 200‧‧‧Abrasive pad
203‧‧‧研磨墊 203‧‧‧Abrasive pad
204‧‧‧研磨墊 204‧‧‧Abrasive pad
231‧‧‧黏合劑 231‧‧‧adhesive
250‧‧‧研磨表面 250‧‧‧Abrasive surface
258‧‧‧研磨表面 258‧‧‧Abrasive surface
260‧‧‧下部分/底部部分/突起部分 260‧‧‧lower part/bottom part/protruding part
263‧‧‧底部部分 263‧‧‧Bottom part
267‧‧‧區段
270‧‧‧上部分 270‧‧‧Part
273‧‧‧頂部部分 273‧‧‧Top part
274‧‧‧上部分 274‧‧‧Part
275‧‧‧上部分 275‧‧‧Part
285‧‧‧區段
299‧‧‧槽 299‧‧‧slot
300‧‧‧研磨墊支撐件 300‧‧‧Grinding pad support
311‧‧‧下表面 311‧‧‧Lower surface
315‧‧‧研磨墊支撐件 315‧‧‧Grinding pad support
317‧‧‧基座 317‧‧‧Dock
320‧‧‧壁 320‧‧‧ Wall
325‧‧‧腔室 325‧‧‧ chamber
327‧‧‧凹部 327‧‧‧recess
405‧‧‧薄膜 405‧‧‧ film
406‧‧‧腔室 406‧‧‧Chamber
410‧‧‧夾持件 410‧‧‧Clamping parts
426‧‧‧腔室 426‧‧‧ chamber
500‧‧‧研磨驅動系統 500‧‧‧Grinding drive system
506‧‧‧致動器 506‧‧‧Actuator
508‧‧‧致動器 508‧‧‧Actuator
509‧‧‧致動器 509‧‧‧Actuator
510‧‧‧臂 510‧‧‧arm
550‧‧‧支撐結構 550‧‧‧support structure
560‧‧‧定位驅動系統 560‧‧‧ Positioning drive system
562‧‧‧線性致動器 562‧‧‧Linear actuator
564‧‧‧線性致動器 564‧‧‧Linear actuator
610‧‧‧研磨墊 610‧‧‧Abrasive pad
620‧‧‧中央馬達輸出軸 620‧‧‧Central motor output shaft
625‧‧‧凸輪 625‧‧‧Cam
630‧‧‧抗旋轉連桿 630‧‧‧Anti-rotation link
809‧‧‧負載區域 809‧‧‧ Load area
810‧‧‧負載區域 810‧‧‧ Load area
901‧‧‧接觸區域 901‧‧‧ contact area
910‧‧‧機械系統基座 910‧‧‧ Mechanical system base
912‧‧‧抗旋轉連桿 912‧‧‧Anti-rotation link
915‧‧‧致動器 915‧‧‧Actuator
920‧‧‧襯墊固持器 920‧‧‧Padding holder
922‧‧‧凸輪 922‧‧‧Cam
924‧‧‧馬達輸出軸 924‧‧‧Motor output shaft
928‧‧‧凹部 928‧‧‧recess
990‧‧‧旋轉軸 990‧‧‧spindle
1032‧‧‧黏合層 1032‧‧‧adhesive layer
1052‧‧‧背托層 1052‧‧‧Backrest
1062‧‧‧研磨層/上區段 1062‧‧‧Grinding layer/upper section
1064‧‧‧上區段 1064‧‧‧Upper section
1066‧‧‧下區段 1066‧‧‧ Lower section
1221‧‧‧上部分 1221‧‧‧Part
1222‧‧‧下部分/突起部分 1222‧‧‧Lower part/protruding part
1301‧‧‧接觸區域 1301‧‧‧ contact area
1402‧‧‧凹部 1402‧‧‧recess
1404‧‧‧插針 1404‧‧‧pin
1406‧‧‧邊緣 1406‧‧‧edge
1900‧‧‧底表面 1900‧‧‧Bottom surface
1903‧‧‧中心 1903‧‧‧ Center
第1圖係研磨系統之示意性橫截面側視圖;第2圖係包括真空夾盤以固持基板的研磨系統之實行方案之示意性橫截面側視圖; 第3圖係具有不包括向下凸部的研磨墊之研磨系統之實行方案之示意性橫截面側視圖;第4圖係具有帶有上層及向下凸部的研磨墊之研磨系統之實行方案之示意性橫截面側視圖,該上層具有比基板大的直徑且該向下凸部具有比基板小的直徑;第5圖係圖示在維持固定角度定向的同時在軌道中移動的研磨墊之示意性橫斷面俯視圖;第6圖係研磨系統之研磨墊支撐及驅動列系統之示意性橫截面俯視圖;第6A圖係與基板相關的第6圖之系統之示意性橫截面俯視圖;第6B圖係第6圖之系統之示意性橫截面俯視圖,相對於第6A圖轉動四分之一;第7A圖係連接至具有複數個夾持件的研磨墊之可移動研磨墊支撐件之示意性橫截面側視圖;第7B圖係包括由內膜圍束的內部加壓空間之可移動研磨墊支撐件之實行方案之示意性橫截面視圖;第8A圖係處於低壓狀態中的第7B圖之可移動研磨墊支撐件之示意性橫截面側視圖;第8B圖係處於高壓狀態中的第7B圖之可移動研磨墊支撐件之示意性橫截面側視圖;第9圖係研磨墊之接觸區域之示意性仰視圖;第10A圖及第10B圖係研磨墊之實行方案之示意性橫截面側視圖; 第11圖係可移動研磨墊支撐件之另一實行方案之示意性橫截面側視圖;第12圖係具有帶有弧形凸部層的研磨墊之研磨系統之實行方案之示意性俯視圖,該弧形凸部層形成相應弧形負載區域;以及第13圖係具有經歷軌道運動的弧形研磨表面之研磨系統之實行方案之示意性橫截面側視圖。 Figure 1 is a schematic cross-sectional side view of a polishing system; Figure 2 is a schematic cross-sectional side view of an implementation of a polishing system including a vacuum chuck to hold a substrate; Figure 3 is a schematic cross-sectional side view of an implementation of a polishing system with a polishing pad that does not include downward convex portions; Figure 4 is an implementation of a polishing system with a polishing pad with upper layers and downward convex portions A schematic cross-sectional side view of the upper layer having a larger diameter than the substrate and the downward convex portion having a smaller diameter than the substrate; Figure 5 illustrates a polishing pad moving in a track while maintaining a fixed angle orientation Schematic cross-sectional top view; FIG. 6 is a schematic cross-sectional top view of the polishing pad support and drive column system of the polishing system; FIG. 6A is a schematic cross-sectional top view of the system of FIG. 6 related to the substrate; 6B Fig. 6 is a schematic cross-sectional top view of the system of Fig. 6, rotated by a quarter relative to Fig. 6A; Fig. 7A is a schematic view of a movable polishing pad support connected to a polishing pad having a plurality of clamping members Cross-sectional side view; Figure 7B is a schematic cross-sectional view of an implementation plan of a movable polishing pad support including an internal pressurized space surrounded by an inner film; Figure 8A is a drawing of Figure 7B in a low-pressure state Schematic cross-sectional side view of the movable polishing pad support; Figure 8B is a schematic cross-sectional side view of the movable polishing pad support of Figure 7B in a high-pressure state; Figure 9 is the contact area of the polishing pad Fig. 10A and Fig. 10B are schematic cross-sectional side views of the implementation of the polishing pad; Figure 11 is a schematic cross-sectional side view of another implementation of a movable polishing pad support; Figure 12 is a schematic top view of an implementation of a polishing system having a polishing pad with a curved convex layer, the The arc-shaped convex layer forms a corresponding arc-shaped load region; and FIG. 13 is a schematic cross-sectional side view of an implementation of a polishing system having an arc-shaped polishing surface that undergoes orbital motion.
第14圖係研磨墊之示意性俯視圖。 Figure 14 is a schematic top view of the polishing pad.
各個圖式中的相同元件符號指示相同元件。 The same element symbol in each drawing indicates the same element.
1.引言 1 Introduction
一些研磨製程導致跨基板之表面的厚度不均勻。舉例而言,塊體研磨製程可導致基板上的研磨不足區域。為解決此問題,在塊體研磨之後,可能執行「修整」研磨製程,該「修整」研磨製程集中於研磨不足的基板部分。 Some grinding processes result in uneven thickness across the surface of the substrate. For example, the bulk polishing process can result in under-polished areas on the substrate. To solve this problem, after the block is polished, a "trimming" polishing process may be performed, and the "trimming" polishing process focuses on the substrate portion that is insufficiently polished.
在塊體研磨製程中,在基板之整個前表面上發生研磨,即便是可能在前表面之不同區域中以不同速率研磨。並非基板的整個表面皆可在塊體研磨製程中的給定瞬間經歷研磨。舉例而言,由於在研磨墊中存在槽,基板表面之某個部分可未與研磨墊接觸。儘管如此,在塊體研磨製程的過程中,由於研磨墊與基板之間的相對運動,並未定位此部分,使得基板之整個前表面經歷一定量的研磨。 In the bulk polishing process, polishing occurs on the entire front surface of the substrate, even though it may be polished at different rates in different areas of the front surface. Not the entire surface of the substrate can be polished at a given instant in the bulk polishing process. For example, due to the grooves in the polishing pad, a certain portion of the substrate surface may not be in contact with the polishing pad. Nevertheless, during the block polishing process, due to the relative movement between the polishing pad and the substrate, this part is not positioned, so that the entire front surface of the substrate undergoes a certain amount of polishing.
相比之下,在「修整」研磨製程中,研磨墊可接觸少於基板之整個前表面。另外,研磨墊相對於基板之運動範圍經配置以使得在修整研磨製程的過程中,研磨墊僅接觸基板之局部區域,且基板之前表面之較大部分(例如,至少50%、至少75%或至少90%)從不接觸研磨墊且因此並非經受研磨。舉例而言,在修整研磨中,接觸區域可實質上比基板之半徑表面小。 In contrast, in the "trimming" polishing process, the polishing pad can contact less than the entire front surface of the substrate. In addition, the range of motion of the polishing pad relative to the substrate is configured so that during the polishing process, the polishing pad only contacts a local area of the substrate, and a larger portion of the front surface of the substrate (eg, at least 50%, at least 75% or (At least 90%) never touches the polishing pad and is therefore not subject to polishing. For example, in dressing polishing, the contact area may be substantially smaller than the radius surface of the substrate.
如上文所指出,一些塊體研磨製程導致非均勻研磨。詳言之,一些塊體研磨製程導致研磨不足的局部非同心及非均勻點位。在修整研磨製程中,圍繞基板之中心旋轉的研磨墊可能夠補償非均勻性之同心環,但可能無法解決局部非同心及非均勻點位,例如,厚度分佈中的角度不對稱性。然而,小襯墊(例如,經歷軌道運動的小襯墊)可用於補償非同心研磨均勻性。對於一些實行方案,在研磨期間,研磨墊可經歷具有固定角度定向的軌道運動。 As noted above, some bulk grinding processes result in non-uniform grinding. In detail, some block grinding processes result in local non-concentric and non-uniform points of insufficient grinding. In the finishing and polishing process, the polishing pad rotating around the center of the substrate may be able to compensate for non-uniform concentric rings, but may not be able to solve local non-concentric and non-uniform points, such as angular asymmetry in the thickness distribution. However, small pads (eg, small pads that undergo orbital motion) can be used to compensate for non-concentric grinding uniformity. For some implementations, during polishing, the polishing pad may undergo orbital motion with a fixed angular orientation.
參看第1圖,用於研磨基板之局部區域的研磨設備100包括固持基板10的基板支撐件105及固持研磨墊200的可移動研磨墊支撐件300。研磨墊200包括研磨表面250,該研磨表面具有比正研磨之基板10之半徑小的直徑。
Referring to FIG. 1, a
研磨墊支撐件300自研磨驅動系統500懸掛下來,該研磨驅動系統將在研磨操作期間提供研磨墊支撐件300相對於基板10之運動。研磨驅動系統500可自支撐結構550懸掛下來。
The
在一些實行方案中,將定位驅動系統560連接至基板支撐件105及/或研磨墊支撐件300。舉例而言,研磨驅動系統500可提供定位驅動系統560與研磨墊支撐件300之間的連接。定位驅動系統560可操作以在基板支撐件105上方的所欲橫向位置處安置襯墊支撐件300。舉例而言,支撐結構550可包括兩個線性致動器562及564,該等線性致動器經定向在基板支撐件105上方相對於彼此垂直,以提供定位驅動系統560。或者,可藉由兩個線性致動器支撐基板支撐件105。或者,基板支撐件105可為可旋轉的,且研磨墊支撐件300可自單個線性致動器懸掛下來,該單個線性致動器提供沿徑向方向的運動。或者,研磨墊支撐件可自旋轉致動器508懸掛下來且可利用旋轉致動器506旋轉基板支撐件105。
In some implementations, the
視情況,可將垂直致動器(藉由506及/或508圖示)連接至基板支撐件105及/或研磨墊支撐件300。舉例而言,可將基板支撐件105連接至垂直可驅動活塞,該活塞可升高或降低基板支撐件105。
Optionally, a vertical actuator (illustrated by 506 and/or 508) may be connected to the
研磨設備100包括埠60以將研磨液65(諸如磨蝕漿)分配在待研磨之基板10之表面12上。研磨設備100亦可包括研磨墊調節器以磨蝕研磨墊200來將研磨墊200維持在一致磨蝕狀態中。
The polishing
在操作中,例如藉由機器人將基板10裝載至基板支撐件105上。定位驅動系統500在基板10上的所欲位置處安置研磨墊支撐件300及研磨墊200,且垂直致動
器506將基板移動成與研磨墊200接觸(或反之利用致動器508來進行)。研磨驅動系統500產生研磨墊支撐件300與基板支撐件105之間的相對運動以引發基板10之研磨。
In operation, the
在研磨操作期間,定位驅動系統560可實質上相對於彼此固定地固持研磨驅動系統500及基板10。舉例而言,定位系統可相對於基板10靜止地固持研磨驅動系統500,或可跨待研磨之區域緩慢(與研磨驅動系統500提供給基板10的運動相比)掃掠研磨驅動系統500。舉例而言,定位驅動系統500提供給基板的瞬時速度可小於研磨驅動系統500提供給基板的瞬時速度的5%,例如,小於2%。
During the polishing operation, the
研磨系統亦包括控制器90,例如,可程式化電腦。控制器可包括中央處理單元91、記憶體92及支援電路93。控制器90之中央處理單元91經由支援電路93執行自記憶體92載入的指令,以允許控制器基於環境及所欲研磨參數接收輸入並控制各種致動器及驅動系統。
The grinding system also includes a controller 90, for example, a programmable computer. The controller may include a
對於「修整」研磨操作,控制器90經程式化以控制定位驅動系統560,如此一來即使正在緩慢掃掠研磨驅動系統500,亦限制研磨驅動系統500之運動範圍,使得在修整研磨製程的過程中,基板之前表面之顯著部分(例如,至少50%、至少75%或至少90%)從不接觸研磨墊且因此並不經受研磨。
For the "dressing" grinding operation, the controller 90 is programmed to control the
2.研磨系統 2. Grinding system
A.基板支撐件 A. Substrate support
參看第1圖,基板支撐件105係位於研磨墊支撐件下方的板狀主體。主體之上表面116提供大到足以容納待處理之基板的負載區域。舉例而言,基板可為200mm至450mm直徑基板。基板支撐件105之上表面116接觸基板10之背表面(亦即,未受研磨之表面)並維持背表面之位置。
Referring to FIG. 1, the
基板支撐件105具有與基板10大約相同或更大的半徑。在一些實行方案中,基板支撐件105比基板略窄(例如,參看第2圖),例如小於基板直徑的1%-2%。當置放在支撐件105上時,基板10之邊緣略微伸出支撐件105之邊緣。此可提供間隙以便邊緣夾緊機器人在支撐件上置放基板。在一些實行方案中,基板支撐件105比基板寬。在此情況中,具有帶有真空夾盤的端效器的機器人可用於在支撐件上置放基板。在任一種情況中,基板支撐件105可與基板之背側上的大部分表面接觸。
The
在一些實行方案中,如第1圖所示,基板支撐件105在研磨操作期間利用夾持組件111維持基板10位置。在一些實行方案中,夾持組件111可為單個環形夾持環112,該夾持環接觸基板10之頂表面之邊緣。或者,夾持組件111可包括兩個弧形夾持件112,該等弧形夾持件接觸基板10之相對側上的頂表面之邊緣。可藉由一或更多個致動器113將夾持組件111之夾持件112降低至與基板之邊緣接觸。夾持件之向下力抑制基板在研磨操作
期間的橫向移動。在一些實行方案中,一或多個夾持件包括圍繞基板之外邊緣的向下凸出凸緣114。
In some implementations, as shown in FIG. 1, the
在一些實行方案中,如第2圖所示,基板支撐件105為真空夾盤106。真空夾盤106包括腔室122及複數個埠124,該等埠將腔室122連接至支撐基板10的表面116。在操作中,可例如藉由泵129從腔室122中排出空氣,從而經由埠124施加吸力以將基板固持在基板支撐件106上的適當位置中。
In some implementations, as shown in FIG. 2, the
在一些實行方案中,如第3圖所示,基板支撐件105包括保持器131。可將保持器131附接於支撐基板10的表面116,並在該表面上方凸出。通常,保持器至少與基板10一樣厚(垂直於表面12量測)。在操作中,保持器131圍繞基板10。舉例而言,保持器131可為環形主體,該環形主體具有比基板10之直徑略大的直徑。在研磨期間,自研磨墊200的摩擦可在基板10上產生橫向力。然而,保持器131限制基板10之橫向運動。
In some implementations, as shown in FIG. 3, the
上文所描述之各種基板支撐件特徵可視情況彼此組合。舉例而言,基板支撐件可包括真空夾盤及保持器兩者。 The various substrate support features described above may be combined with each other as appropriate. For example, the substrate support may include both a vacuum chuck and a holder.
另外,儘管為了便於圖示結合壓敏黏合劑可移動襯墊支撐件配置圖示基板支撐件配置,但該等配置可與下文描述之襯墊支撐頭及/或驅動系統之實施例中的任一者一起使用。 In addition, although the configuration of the substrate support is illustrated for ease of illustration in conjunction with a pressure sensitive adhesive movable pad support configuration, these configurations may be any of the embodiments of the pad support head and/or drive system described below Use them together.
B.研磨墊 B. Grinding pad
參看第1圖,研磨墊200具有研磨表面250,該研磨表面在研磨期間與基板10在接觸區域(亦稱為負載區域)中產生接觸。研磨表面250可具有比基板10之半徑小的直徑。舉例而言,研磨表面之直徑可為基板之直徑的約5%-10%。舉例而言,對於具有自200mm至300mm範圍內直徑之晶圓,研磨表面之直徑可介於10mm與30mm之間。較小研磨表面提供更多精確性但產量較低。
Referring to FIG. 1, the
在一些實行方案中,基板表面的小於1%可在任何給定時間處與研磨表面接觸。大體而言,儘管此可用於修整研磨操作,但此小區域因低產量而不可為塊體研磨操作所接受。 In some implementations, less than 1% of the substrate surface can be in contact with the abrasive surface at any given time. In general, although this can be used for dressing and grinding operations, this small area is not acceptable for block grinding operations due to low throughput.
在一些實行方案中,例如如第3圖所示,整個研磨墊(例如,襯墊之外邊緣所量測)具有比基板10之半徑小的直徑。舉例而言,研磨墊之直徑可為基板之直徑的約5%-10%。
In some implementations, for example, as shown in FIG. 3, the entire polishing pad (e.g., measured at the outer edge of the pad) has a diameter smaller than the radius of the
在第1圖中的實例中,在基板10之上表面上方安置研磨墊200,且該研磨墊包括耦接至可移動襯墊支撐件300之底部的上部分270及具有底表面250的下部分260,該底表面在研磨操作期間與基板10接觸。在一些情形中,如第1圖所示,藉由自較寬上部分270的突起部分提供研磨墊200之底部部分260。突起部分260之底表面250在研磨操作期間接觸到基板,並提供研磨表面。
In the example in FIG. 1, a
在第1圖中的實例中,使用壓敏黏合劑231將可移動襯墊支撐件300耦接至研磨墊200之上部分270。塗覆於研磨墊支撐件300之底表面與研磨墊200之頂表面之間的壓敏黏合劑231在研磨操作期間維持研磨墊200在襯墊支撐件300上耦接。
In the example in FIG. 1, the pressure-
藉由使得研磨墊200之上部分270比下部分260寬,增加黏合劑231的可用表面區域。增加黏合劑231之表面積可改良襯墊200與襯墊支撐件之間的黏結強度,且降低研磨期間的研磨墊之分層風險。
By making the
參看第3圖,研磨墊203之下部分260可具有與頂部部分273相同的半徑。然而,當壓敏黏合劑231提供襯墊與可移動襯墊支撐件300之間的耦接時,較佳的是底部部分263比頂部部分273窄。
Referring to FIG. 3, the
參看第5圖,研磨墊之接觸區域5可為由研磨墊之碟形底部突起部分形成的碟形幾何形狀5。
Referring to FIG. 5, the
參看第9A圖及第9B圖,與基板10接觸的研磨墊110之接觸區域901可為由研磨墊之弧形突起部分290形成的弧形接觸區域901。
Referring to FIGS. 9A and 9B, the
參看第1圖,在一些實行方案中,研磨墊200之上部分270之直徑可比基板10之直徑小。
Referring to FIG. 1, in some implementations, the diameter of the
參看第4圖,在一些實行方案中,研磨墊204之上部分274之直徑可比基板10之直徑大。
Referring to FIG. 4, in some implementations, the diameter of the
參看第1圖,研磨墊200可由均勻組成物之單個層組成。在此情況中,上部分270與下部分260(亦稱為突起部分260)之材料組成物為相同的。
Referring to Figure 1, the
參看第10B圖,在一些實行方案中,研磨墊200可包括不同組成物之兩個或更多個層,例如研磨層1062及較可壓縮背托層1052。視情況,中間壓敏黏合層1032可用於將研磨層1061緊固至背托層1061。在此情況中,上部分1221可對應於背托層102,且下部分1222可對應於研磨層1062。可經由壓敏黏合層231將研磨墊耦接至研磨墊支撐件。
Referring to FIG. 10B, in some implementations, the
參看第10A圖,在一些實行方案中,研磨墊可包括具有不同組成物之兩個或更多個層,且研磨墊200之上部分1221可包括背托層1052及研磨層1062之上區段1064兩者。因此,研磨層1062包括提供突起部分1222的下區段1066及上區段1062兩者,其中上區段1064比下區段1066寬。
Referring to FIG. 10A, in some implementations, the polishing pad may include two or more layers with different compositions, and the
可經由壓敏黏合層321將研磨墊耦接至研磨墊支撐件。 The polishing pad can be coupled to the polishing pad support via the pressure-sensitive adhesive layer 321.
在第10A圖或者第10B圖所示之任一實行方案中,研磨層1062可由均勻組成物之單個層組成。舉例而言,在第10A圖或者第10B圖所示之任一實行方案中,接觸基板的襯墊之部分可具有習知材料,例如微孔聚合物,諸如聚胺基甲酸酯。
In any implementation shown in FIG. 10A or FIG. 10B, the
參看第10A圖,背托層1052可相對較軟以在研磨不均勻的基板表面點位時允許較佳的研磨墊可撓性。研磨層1064可為硬聚胺基甲酸酯。
Referring to FIG. 10A, the
參看第10B圖,背托層1052可相對較軟,但亦可為由諸如聚對苯二甲酸乙二酯(例如,MylarTM)之材料製成的可撓不可壓縮層。舉例而言,此襯墊配置可用於實行方案中,其中將第10B圖之研磨墊耦接至第11圖之加壓腔室研磨墊支撐件。研磨層1062可為硬聚胺基甲酸酯。
Referring to FIG. 10B, the
參看第11圖,在一些實行方案中,研磨墊205可包括上部分275及下部分260。研磨墊205具有較厚橫向區段267,該橫向區段包括組合的下部分260及上部分275。上部分275在較厚區段267之任一側上橫向延伸以提供橫向側面區段285。橫向側面區段285回應於較厚區段267上的壓力而撓曲。較厚區段267可在研磨區域內具有約2mm之襯墊厚度,該研磨區域類似於大尺寸襯墊。撓曲橫向區段285中的襯墊厚度可為約0.5mm。
Referring to FIG. 11, in some implementations, the polishing pad 205 may include an
在一些實行方案中,研磨墊200之下部分之底表面250可包括槽以容許在研磨操作期間輸送漿料。槽299可比下部分260之深度更淺(例如,參看第11圖)。然而,在一些實行方案中,下部分不包括槽。若研磨墊包括槽,則槽299可跨下部分260之橫向寬度完全延伸。另外,槽可比下部分260之垂直厚度更淺,亦即槽以垂直方式部分地而非完全地通過下部分260。
In some implementations, the
參看第9圖,研磨墊200之底表面1900可為弧形區域。若此研磨墊包括槽,則槽299可跨弧形區域之橫向寬度完全延伸。可沿弧形區域之長度以均勻間距間隔槽299。每一槽299可沿通過槽及弧形區域之中心1903的半徑延伸,或相對於該半徑以一角度(例如,45°)安置每一槽299。
Referring to FIG. 9, the
參看第14圖,在一些實行方案中,研磨墊200包括對準特徵,該等對準特徵與襯墊支撐件300上的匹配特徵插接,以確保研磨墊200及提供接觸區域250的下部分260位於相對於襯墊支撐件300的已知橫向位置中。
Referring to FIG. 14, in some implementations, the
舉例而言,研磨墊200可包括形成於研磨墊200之背表面中的凹部1402。可在研磨墊中相對於接觸區域250的已知位置中機器鑽出凹部1402。可在研磨墊200之上部分270之薄凸緣或外部橫向部分285中安置凹部1402。凹部可部分或完全延伸穿過研磨墊。襯墊支撐件300可包括插針1404(例如,自板材向下凸出),該等插針裝配至凹部1402中。
For example, the
作為另一實例,在研磨墊200上界定接觸區域250之後,可加工研磨墊200之至少一些邊緣1406。襯墊支撐件300可包括加工進入支撐件板材中的凹部。凹部之邊緣包括對準表面,且研磨墊之邊緣1406經定位以毗連板材中的凹部之對準表面。
As another example, after the
接觸基板的研磨墊200之下部分260可由高品質材料形成,該高品質材料例如滿足剛性、孔隙率及類
似者之高精密規格的材料。然而,不接觸基板的研磨墊之其他部分不必滿足此類高精密規格,且因此可由較低成本的材料形成。此可降低襯墊總成本。
The
C.襯墊之驅動系統及軌道運動 C. Drive system and track movement of the pad
參看第1圖及第5圖,研磨驅動系統500可經配置以在研磨操作期間在基板10上方的軌道運動中移動耦接之研磨墊支撐件300及研磨墊200。詳言之,如第5圖所示,研磨驅動系統500可經配置以在研磨操作期間在相對於基板的固定角度定向上維持研磨墊。
Referring to FIGS. 1 and 5, the polishing
參看第5圖,與基板接觸的研磨墊之軌道半徑20較佳地比接觸區域之直徑22小。舉例而言,軌道半徑可為接觸區域之直徑的約5%-50%(例如,5%-20%)。對於20mm至30mm直徑接觸區域,軌道半徑可為1mm至6mm。此實現了負載區域5中更加均勻的速度分佈。研磨墊可以每分鐘轉數1000至5000(「rpm」)之速率在軌道中運轉。
Referring to FIG. 5, the
參看第6圖,驅動列可包括機械系統基座910,該機械系統基座利用單個致動器915實現軌道運動。將馬達輸出軸924連接性耦接至凸輪922。凸輪922延伸至研磨墊固持器920中的凹部928中。在研磨操作期間,馬達輸出軸924圍繞旋轉軸990旋轉,從而引發凸輪922轉動研磨墊固持器920。複數個抗旋轉連桿912自機械系統基座910延伸至研磨墊固持器920之上部分以防止襯墊固持器920旋轉。與凸輪922之運動結合的抗旋轉
連桿912實現了研磨墊支撐件之軌道運動,其中研磨墊固持器920之角度定向在研磨操作期間並未改變。
Referring to FIG. 6, the drive train may include a
如第6A圖及第6B圖中所描繪,軌道運動可在研磨操作期間維持研磨墊相對於基板之固定角度定向。隨著中央馬達輸出軸620旋轉,與抗旋轉連桿630組合的凸輪625將旋轉運動平移至研磨墊610的軌道運動中,該等抗旋轉連桿將上方機械系統基座連接至研磨墊支撐件。此實現了比單純旋轉更加均勻的速度分佈。
As depicted in Figures 6A and 6B, the orbital motion can maintain a fixed angular orientation of the polishing pad relative to the substrate during the polishing operation. As the central
在一些實行方案中,藉由相同元件提供研磨驅動系統及定位驅動系統。舉例而言,單個驅動系統可包括兩個線性致動器,該等線性致動器經配置以在兩個垂直方向上移動襯墊支撐頭。對於定位,控制器可引發致動器將襯墊支撐件移動至基板上的所欲位置。對於研磨,控制器可例如藉由應用相位偏移正弦訊號至兩個致動器來引發致動器在軌道運動中移動襯墊支撐件。 In some implementations, the grinding drive system and the positioning drive system are provided by the same components. For example, a single drive system may include two linear actuators that are configured to move the pad support head in two perpendicular directions. For positioning, the controller can cause the actuator to move the pad support to the desired position on the substrate. For grinding, the controller may cause the actuator to move the pad support in orbital motion, for example, by applying a phase-shifted sinusoidal signal to the two actuators.
參看第1圖,在一些實行方案中,研磨驅動系統500可包括兩個旋轉致動器。舉例而言,研磨墊支撐件可自旋轉致動器508懸掛下來,接著該旋轉致動器自第二旋轉致動器509懸掛下來。在研磨操作期間,第二旋轉致動器509旋轉臂510,該臂在軌道運動中掃掠研磨墊支撐件300。第一旋轉致動器508例如在與第二旋轉致動器509相反方向上但以相同的轉速旋轉以抵消旋轉運動,以使得研磨墊組件在保持相對於基板的實質固定角度位置中的同時沿軌道運動。
Referring to FIG. 1, in some implementations, the grinding
D.襯墊支撐件 D. Pad support
可移動襯墊支撐件300固持研磨墊,且耦接至研磨驅動系統500。
The
在一些實施例中,例如如第1圖至第4圖所示,襯墊支撐件300為簡單剛性板材。板材之下表面311足夠大以便容納研磨墊200之上部分270。
In some embodiments, for example, as shown in FIGS. 1 to 4, the
然而,襯墊支撐件300亦可包括致動器508以控制研磨墊200對基板10之向下壓力。
However, the
在第7A圖中的實例中,圖示襯墊支撐件300,該襯墊支撐件可在研磨墊200上施加可調壓力。襯墊支撐件300包括基座317,該基座經耦接至研磨驅動系統500。基座317之底部包括凹部327。襯墊支撐件300包括夾持件410,該夾持件在基座317上固持研磨墊200之邊緣。研磨墊200可覆蓋凹部327以界定可加壓腔室426。藉由將流體泵送進出腔室426,可調節研磨墊200對基板10之向下壓力。
In the example in FIG. 7A, a
在一些實行方案中,如第7B圖、第8A圖及第8B圖所示,襯墊支撐件300可具有內部薄膜405,該內部薄膜界定薄膜405與基座317之間的第一可加壓腔室406。薄膜經定位以接觸遠離研磨表面258的研磨墊200之側面275。薄膜405及腔室406經配置以使得當襯墊支撐件300在研磨操作期間固持研磨墊200時,腔室406中的壓力控制研磨墊200在基板10上的負載區域809之尺寸。當腔室內部的壓力增加時,薄膜擴大半徑,從而對襯
墊之底部突起部分層之較大部分施加壓力,且因此增加負載區域810之面積。當壓力減小時,結果為較小尺寸的負載區域809。
In some implementations, as shown in FIGS. 7B, 8A, and 8B, the
參看第11圖,在一些實行方案中,研磨墊支撐件315可包括由研磨墊支撐件315之壁320形成的內部可加壓腔室325。腔室325可具有面向基板的開口327。可藉由例如由夾持件410將研磨墊200緊固至研磨墊支撐件315來密封開口327。在研磨操作期間,可例如藉由控制器及液壓泵動態控制壓力腔室425中的壓力以調節至正研磨之非均勻點位。
Referring to FIG. 11, in some implementations, the
參看第12圖,在一些實行方案中,研磨墊20之接觸區域1301可為弧形區域。舉例而言,突起部分可為弧形。驅動系統500可圍繞基板10之中心1302旋轉該弧。
Referring to FIG. 12, in some implementation solutions, the
參看第13圖,在一些實施例中,研磨墊200接觸區域901可為弧形區域,該弧形區域經歷相對於基板10的軌道運動。
Referring to FIG. 13, in some embodiments, the
3.結論 3. Conclusion
基板上的非均勻性之點位尺寸將指示在彼點位之研磨期間的接觸區域之理想尺寸。若接觸區域太大,則對基板上的一些區域之研磨不足的修正可導致其他區域之過度研磨。另一方面,若接觸區域太小,則襯墊將需要跨基板移動以覆蓋研磨不足區域,從而減少了產量。 The point size of the non-uniformity on the substrate will indicate the ideal size of the contact area during grinding at that point. If the contact area is too large, the correction of insufficient polishing of some areas on the substrate may lead to excessive polishing of other areas. On the other hand, if the contact area is too small, the liner will need to be moved across the substrate to cover the under-polished area, thereby reducing throughput.
在基板處理操作中,基板可先經歷塊體研磨製程,其中在基板之整個前表面上執行研磨。視情況,在塊體研磨操作之後,可例如在生產線內或獨立測量站處量測基板之非均勻性。可隨後將基板輸送至研磨設備100,並經歷修整研磨製程。在研磨設備處對待研磨之區域的控制可基於基板之研磨不足區域之識別,該識別來自歷史資料(例如,品質鑑定期間產生的厚度量測)或者來自生產線內或獨立測量站處的基板量測。
In the substrate processing operation, the substrate may first undergo a bulk polishing process, where the polishing is performed on the entire front surface of the substrate. As the case may be, after the block grinding operation, the non-uniformity of the substrate may be measured, for example, in a production line or at an independent measuring station. The substrate can then be transported to the
可排列整個研磨系統,其中垂直或面朝下(相對於重力)安置基板之前表面。然而,使得基板之前表面面朝上的優勢在於此容許在基板之面上分佈漿料。由於基板相對於研磨墊之研磨表面的較大尺寸,此可改良漿料滯留且因此減少漿料使用。 The entire grinding system can be arranged with the front surface of the substrate placed vertically or face down (relative to gravity). However, the advantage of having the front surface of the substrate face up is that this allows the slurry to be distributed on the surface of the substrate. Due to the larger size of the substrate relative to the polishing surface of the polishing pad, this can improve slurry retention and thus reduce slurry usage.
已經描述本發明之眾多實施例。儘管如此,應理解,可在不脫離本發明之精神及範疇的情況下實行各種修改。舉例而言,在一些實施例中,基板支撐件可包括自己的致動器,該等致動器能夠將基板移動至相對於研磨墊的適當位置中。作為另一實例,儘管上文所描述之系統包括在實質固定位置中固持基板的同時在軌道中移動研磨墊的驅動系統,但可在實質固定位置中固持研磨墊且在軌道中移動基板。在此情況中,研磨驅動系統可為類似驅動系統,但耦接至基板支撐件,而非研磨墊支撐件。儘管採用大體圓形基板,但此並非必需,且支撐件及/或研磨墊 可為諸如長方形之其他形狀(在此情況中,「半徑」或「直徑」之論述將大體適於沿主軸的橫向尺寸)。 Numerous embodiments of the present invention have been described. Nevertheless, it should be understood that various modifications can be made without departing from the spirit and scope of the invention. For example, in some embodiments, the substrate support may include its own actuators that can move the substrate into the appropriate position relative to the polishing pad. As another example, although the system described above includes a drive system that moves the polishing pad in the track while holding the substrate in a substantially fixed position, the polishing pad can be held in the substantially fixed position and the substrate is moved in the track. In this case, the polishing drive system may be a similar drive system, but coupled to the substrate support instead of the polishing pad support. Although a substantially circular substrate is used, this is not necessary and the support and/or polishing pad It may be other shapes such as a rectangle (in this case, the discussion of "radius" or "diameter" will generally be adapted to the lateral dimension along the major axis).
因此,其他實施例處於以下申請專利範圍之範疇內。 Therefore, other embodiments are within the scope of the following patent applications.
10‧‧‧基板 10‧‧‧ substrate
12‧‧‧表面 12‧‧‧Surface
60‧‧‧埠 60‧‧‧ port
65‧‧‧研磨液 65‧‧‧Slurry
91‧‧‧中央處理單元 91‧‧‧Central Processing Unit
92‧‧‧記憶體 92‧‧‧Memory
93‧‧‧支援電路 93‧‧‧Support circuit
99‧‧‧控制器 99‧‧‧Controller
100‧‧‧研磨設備 100‧‧‧Grinding equipment
105‧‧‧基板支撐件 105‧‧‧ substrate support
111‧‧‧夾持組件 111‧‧‧Clamping assembly
112‧‧‧環形夾持環/弧形夾持件 112‧‧‧Annular clamping ring/arc clamping part
113‧‧‧致動器 113‧‧‧Actuator
114‧‧‧凸緣 114‧‧‧Flange
116‧‧‧上表面 116‧‧‧Upper surface
200‧‧‧研磨墊 200‧‧‧Abrasive pad
231‧‧‧黏合劑 231‧‧‧adhesive
250‧‧‧研磨表面 250‧‧‧Abrasive surface
260‧‧‧下部分/底部部分/突起部分 260‧‧‧lower part/bottom part/protruding part
270‧‧‧上部分 270‧‧‧Part
300‧‧‧研磨墊支撐件 300‧‧‧Grinding pad support
311‧‧‧下表面 311‧‧‧Lower surface
500‧‧‧研磨驅動系統 500‧‧‧Grinding drive system
506‧‧‧致動器 506‧‧‧Actuator
508‧‧‧致動器 508‧‧‧Actuator
509‧‧‧致動器 509‧‧‧Actuator
510‧‧‧臂 510‧‧‧arm
550‧‧‧支撐結構 550‧‧‧support structure
560‧‧‧定位驅動系統 560‧‧‧ Positioning drive system
562‧‧‧線性致動器 562‧‧‧Linear actuator
564‧‧‧線性致動器 564‧‧‧Linear actuator
Claims (25)
Applications Claiming Priority (6)
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US14/334,608 US10076817B2 (en) | 2014-07-17 | 2014-07-17 | Orbital polishing with small pad |
US14/334,608 | 2014-07-17 | ||
US201462039840P | 2014-08-20 | 2014-08-20 | |
US62/039,840 | 2014-08-20 | ||
US14/464,633 US10207389B2 (en) | 2014-07-17 | 2014-08-20 | Polishing pad configuration and chemical mechanical polishing system |
US14/464,633 | 2014-08-20 |
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TWI692385B true TWI692385B (en) | 2020-05-01 |
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- 2015-07-10 WO PCT/US2015/040065 patent/WO2016010866A1/en active Application Filing
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2020
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Also Published As
Publication number | Publication date |
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JP2020092276A (en) | 2020-06-11 |
KR102399064B1 (en) | 2022-05-16 |
KR20170032325A (en) | 2017-03-22 |
CN112123196A (en) | 2020-12-25 |
JP6955592B2 (en) | 2021-10-27 |
CN106463383B (en) | 2020-10-16 |
JP2017522733A (en) | 2017-08-10 |
TW201609313A (en) | 2016-03-16 |
CN106463383A (en) | 2017-02-22 |
WO2016010866A1 (en) | 2016-01-21 |
CN112123196B (en) | 2023-05-30 |
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