JP2001118812A - Chemical mechanical-polishing device and manufacturing method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a chemical mechanical-polishing device of a substrate where a metal layer is provided on an insulation layer whose dicing and erosion have been suppressed. SOLUTION: By relatively moving a polishing pad and a substrate while polishing liquid is included between the polishing pad and the substrate, in the chemical mechanical-polishing device for polishing the substrate, the shape of the polishing pad is in an annular body where the central part of a circle or an ellipse has been hollowed out in a circular shape or an elliptical shape with a smaller diameter.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing apparatus and a semiconductor using the same, which can provide a substrate which suppresses dishing and erosion and has excellent uniformity in thickness distribution of a chemically mechanically polished substrate. The present invention relates to a device manufacturing method. According to the chemical mechanical polishing apparatus of the present invention, there is provided a method for removing a metal film formed on an insulating layer, removing an insulating layer film on a substrate surface provided with an insulating layer film on a pattern pattern of a metal film, and performing STI.
(Shallow Trench Insulator) is useful for removing the P-TEOS layer.

[0002]

2. Description of the Related Art A polishing pad mounted on a spindle shaft is used. A polishing slurry is supplied to the surface of the polishing pad while a wafer held by a chuck is pressed to rotate the pad and the wafer in the same direction or in the opposite direction. A polishing apparatus for polishing or CMP polishing a wafer by polishing the wafer is known (Japanese Unexamined Patent Publication No.
21028, JP-A-7-266219, JP-A-8-
192353, JP-A-8-293377, JP-A-1
0-173715, JP-A-11-156711, British Patent No. 2331948, etc.).

[0003] Pad materials include hard foamed urethane sheet, polyester fiber non-woven fabric, felt, and polyvinyl alcohol.
Rualcoal fiber nonwoven fabrics, nylon fiber nonwoven fabrics, and those obtained by casting a foamable urethane resin solution on these nonwoven fabrics and then foaming and curing are used.

Heretofore, the pad shape has a circular shape similar to the shape of a substrate to be polished, and a pad having a thickness of 3 to 7 mm has been used by being attached to a mounting plate such as an aluminum plate or a stainless steel plate.

In order to perform CMP polishing of a substrate having a metal film using such a circular pad, for example, Japanese Patent Application Laid-Open No. H10-173
No. 715 and JP-A-11-156711, a substrate having a metal film is held on a chuck table with the metal film surface facing upward, and mounted on a spindle shaft having a vertical axis in a vertical direction. Pressing the polishing pad surface attached to the plate relatively against the substrate via loose abrasive grains,
The chemical mechanical polishing was performed by sliding the substrate and the polishing pad and swinging the polishing pad in the horizontal direction by 20 to 50 mm on the substrate surface to remove at least a part of the metal film on the substrate surface.

The diameter of the polishing pad is approximately half the diameter of the substrate having the metal film, and the polishing pad is
Swing to the left and right direction by 50mm
Polish by rotating at a high speed of 0-800 rpm, 300m
It satisfies the high-speed processing required for CMP polishing of a substrate having a diameter of m, but the dishing of the metal layer of the substrate obtained by the high-speed polishing is as large as 200 to 320 nm, and the erosion is high if the density of the metal film with respect to the insulating layer is high. 60 to 100 nm, a device wafer has a device layer of 5 to 10 nm.
60n dishing for high integration with layers
The market demands that the erosion be 80 nm or less.

[0007]

SUMMARY OF THE INVENTION The present invention provides a chemical polishing method for polishing a substrate by relatively moving the polishing pad and the substrate while a polishing liquid is interposed between the polishing pad and the substrate. In a mechanical polishing apparatus, an object is to provide a CMP apparatus that satisfies the above market requirements.

Further, the present invention improves the yield by satisfying the market requirements for dishing and erosion in the polishing process, thereby manufacturing a semiconductor device at a lower cost than a conventional semiconductor device manufacturing method. It is an object of the present invention to provide a semiconductor device manufacturing method capable of performing the above.

[0009]

According to one aspect of the present invention, a polishing pad is polished by relatively moving the polishing pad and the substrate while a polishing liquid is interposed between the polishing pad and the substrate. In the chemical mechanical polishing apparatus, the polishing pad is an annular body in which a central portion of a circle or an ellipse is hollowed out in a circular or elliptical shape with a smaller diameter. Is what you do.

By performing chemical mechanical polishing using an annular polishing pad having a hollow central portion, dishing and erosion can be reduced even in high-speed polishing.

According to a second aspect of the present invention, there is provided a polishing pad which is attached to a mounting plate which is held on a chuck table with a substrate having a metal film with the metal film surface facing upward and which has a shaft center in a vertical direction. A chemical mechanical polishing apparatus that presses a surface relative to the substrate via loose abrasive grains, and slides the substrate and a polishing pad to remove at least a part of a metal film on the surface of the substrate. It has a pad lifting / lowering mechanism and a transfer mechanism capable of reciprocating the polishing pad in the left-right direction, and the polishing pad has a circular or elliptical central portion that is hollowed out into a circular or elliptical shape with a smaller diameter. An object of the present invention is to provide a chemical mechanical polishing apparatus characterized by being an annular body, wherein the diameter of the polishing pad is smaller than the diameter of the substrate.

A dish is reduced to 60 nm or less even in a high-speed polishing process by using an annular polishing pad having a hollow central portion, and performing chemical mechanical polishing while oscillating the polishing pad back and forth in the left-right direction during polishing. -It became possible to suppress the John to 80 nm or less.

A third aspect of the present invention is an S-type semiconductor device having a P-TEOS film.
The TI substrate is held on a chuck table with the P-TEOS film surface facing upward, and the polishing pad surface affixed to a mounting plate that is mounted on a spindle shaft having a shaft center in a vertical direction is relatively loose abrasive particles. A chemical mechanical polishing apparatus for removing at least a part of a P-TEOS film on a surface of a substrate by pressing the polishing pad against the substrate and sliding the polishing pad with the substrate, wherein the polishing pad lifting and lowering mechanism; A transfer mechanism capable of reciprocating the pad in the left-right direction, wherein the shape of the polishing pad is an annular body in which the center of a circle or an ellipse is hollowed out into a circle or an ellipse of a smaller diameter; The present invention provides a chemical mechanical polishing apparatus characterized in that the diameter is smaller than the diameter of the substrate.

According to a fourth aspect of the present invention, a substrate having an insulating layer film formed on a pattern of a metal film is held on a chuck table with the insulating layer film surface facing upward, and has a shaft center in a vertical direction. Pressing the polishing pad surface attached to the mounting plate bearing on the spindle shaft relatively to the substrate via loose abrasive grains,
A chemical mechanical polishing apparatus that slides the substrate and the polishing pad to remove at least a part of the insulating layer film on the substrate surface,
The polishing pad lifting and lowering mechanism, and a transfer mechanism that can reciprocate the polishing pad in the left-right direction, the shape of the polishing pad is a circle or an ellipse in the center of a circle or an ellipse smaller diameter. An object of the present invention is to provide a chemical mechanical polishing apparatus characterized in that the polishing pad is a hollow body and the diameter of the polishing pad is smaller than the diameter of the substrate.

According to 3 or 4 of the present invention, dishing and erosion can be suppressed not only in the removal of the metal film but also in the removal of the insulating layer and the removal of the P-TEOS film of the STI.

According to a fifth aspect of the present invention, in the chemical mechanical polishing apparatus according to any one of the second to fourth aspects of the present invention, the transfer mechanism changes a moving speed of the polishing pad in the left-right direction according to a position of the polishing pad with respect to the substrate. Characterized by having a function of causing

Dishing and erosion can be further suppressed. According to a sixth aspect of the present invention, in the chemical mechanical polishing apparatus according to any one of the first to fifth aspects of the present invention, the bored inner diameter of the polishing pad is 5 to 75 times the outer diameter of the polishing pad.
% Length.

The dishing and erosion can be effectively suppressed by setting the above-mentioned hollowing ratio of the polishing pad. A seventh aspect of the present invention provides a method for manufacturing a semiconductor device, comprising a step of flattening a surface of a semiconductor wafer using the chemical mechanical polishing apparatus according to any one of the first to sixth aspects of the present invention.

The use of any one of the chemical mechanical polishing apparatuses of the present invention in the CMP step can satisfy the market requirements for dishing and erosion, thereby improving the yield and thereby improving the conventional semiconductor device. A semiconductor device can be manufactured at a lower cost than a manufacturing method.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings. 1 is a perspective view showing an example of a chemical mechanical polishing apparatus, FIG. 2 is a perspective view showing a polishing pad transfer mechanism, and FIG.
Is a partial cross-sectional view of the polishing pad and the conditioning device,
4 is a cross-sectional view of the polishing head, FIG. 5 is a perspective view of the polishing pad, FIG. 6 is a correlation diagram between the rotation speed of the polishing pad and the dishing depth, and FIG. 7 is a correlation between the pattern density of the metal layer and the erosion. 8 and FIG. 8 are correlation diagrams between the wiring pattern width and the dishing depth, FIG. 9 is a correlation diagram between the STI trench width and the erosion, and FIG. 10 is a correlation diagram between the STI trench density and the erosion.

In the index type chemical mechanical polishing apparatus 1 shown in FIGS. 1, 2 and 3, 2 is a polishing head, 2a
Is a polishing head for rough polishing, 2b is a head for finish polishing, 3,
3 is a rotating shaft, 3a is a motor, 3b is a gear, and 3c is a gear.
Re, 3d is a gear, 4, 4 is a polishing pad, 5, 5 is a pad conditioning mechanism, 5a is a dressing disk, 5b is an injection nozzle, 5c is a protective cover, 6, 6 is a rotatable cleaning brush, 7 is Polishing head transfer mechanism, 7a
Is a rail, 7b is a feed screw, and 7c is a moving body screwed to the feed screw and has a polishing head 2. 7d and 7e are gears, 7f is a motor, 8 is an air cylinder which is a head elevating mechanism, 9 is a wafer w storage cassette, and 10 is a low.
Robot 11 for transferring wafers, 11 is a temporary wafer mounting table, 12 is a rotatable wafer chuck mechanism 12a, 12b, which is provided at equal intervals on the same circumference with a shaft 12e as an axis.
An index table having 12c and 12d,
The bull 12 is classified into a wafer loading zone of s1, a rough polishing zone of s2, a finishing polishing zone of s3, and a wafer unloading zone of s4.

13 is a transfer robot for unloading,
14a is a chuck dresser, 14b is a chuck cleaning mechanism, 15 is a temporary wafer placement table, 16 is a belt conveyor, 17
Denotes a wafer cleaning mechanism.

In the polishing head 2 shown in FIG. 4, the overhanging edge 21a of the substrate 21 is
The polishing pad (annular polishing cloth) 4 is supported by a substrate 21 via a polishing cloth mounting plate 22. A diaphragm 23 is stretched in a pressurizing chamber 20b in the pressurizing cylinder 20, and compressed air is press-fitted into the pressurizing chamber 20b through the spindle shaft 3, and the substrate 21 is three-dimensionally (X, Y) by the pressure. , Z), and the pad 4 is held parallel to the wafer surface.

A polishing liquid or cleaning liquid supply pipe 24 is provided at the center of the head 2, and the tip of the pipe faces the back surface of the polishing pad ring body avoiding the central hollow portion 4 a of the polishing pad.
A polishing liquid or an etching liquid is supplied to the surface of the metal layer of the substrate via the annular body.

In the polishing pad 4 shown in FIG. 5, (a)
Is an annular polishing pad used in the present invention, and (b) is an elliptical annular polishing pad used in the present invention. The hollow inner diameter li of the annular polishing pad is 5 to 75%, preferably 30 to 50% of the length of the polishing pad outer diameter lo.

The outer diameter of the polishing pad with respect to the outer diameter of the substrate w having the metal film to be polished is 0.1 mm in the case of an annular pad.
In the case of an oval annular pad, the minor axis is 0.5 to 0.75 times.
It is 35 to 0.40 times and the major axis is 0.5 to 0.75 times.

As the pad material, rigid urethane sheet, polyester fiber non-woven fabric, felt, polyvinyl alcohol
Rualcol fiber nonwoven fabric, nylon fiber nonwoven fabric, foamed urethane resin solution cast on these nonwoven fabrics, and then foamed and cured are used. The thickness is 3-7m
m. Further, these laminates can also be used.

The polishing liquid is (a) colloidal alumina,
0.01-20% by weight of solid abrasive grains such as fumed silica, cerium oxide, titania, and (b) copper nitrate, iron citrate,
1 to 15% by weight of an oxidizing agent such as manganese peroxide, ethylenediaminetetraacetic acid, hexacyanoiron, hydrofluoric acid, fluorotitanic acid, dipersulfate, ammonium fluoride, ammonium hydrogen difluoride, ammonium persulfate, hydrogen peroxide, etc. (C) 0.3 to 3% by weight of a surfactant,
A slurry containing (d) a pH adjuster, (e) a preservative, and the like is used (JP-A-6-313164, JP-A-8-197414, JP-A-8-51037, and JP-A-10-104). 67986, JP-A-10-226784, etc.).

An abrasive slurry suitable for polishing metals such as copper, copper-titanium, copper-tungsten, and titanium-aluminum.
Is Fujimi Incorporated, Inc.
It can be obtained from Nitta Corporation, Cabot Corporation in the United States, and Rodell Corporation in the United States.

The step of polishing a wafer having a metal film on an insulating layer using the above-described chemical mechanical polishing apparatus is performed as follows. 1) The wafer w1 is taken out of the cassette 9 by the arm of the transfer robot 10, placed on the temporary mounting table 11 with the metal film surface facing upward, the back surface thereof is cleaned, and then the index table 12 is transferred by the transfer robot. Uehara-
It is transferred to the ding zone s1 and is sucked by the chuck mechanism 12a.

2) The index table 12 is rotated clockwise by 90 degrees to rotate the wafer w1 in the first polishing zone s.
2, the spindle shaft 3 is lowered, the polishing pad 4 attached to the head 2a is pressed against the wafer w1, and the wafer is chemically and mechanically polished by rotating the spindle shaft 3 and the chuck mechanism. During this time, a new wafer w
2 is placed on the temporary table, transferred to the wafer loading zone s1, and sucked by the chuck mechanism 12b.

At the time of CMP processing of the wafer, an abrasive liquid is supplied to the back surface of the annular body 4 at a rate of 10 to 100 ml / min from a supply pipe 24 provided in a hollow portion of the spindle shaft 3. The number of rotations of the wafer adsorbed on the chuck table is 200 to 80.
0 rpm, preferably 300-600 rpm, and the rotation speed of the polishing pad is 400-3000 rpm, preferably 60 rpm.
0 to 1000 rpm.

During the CMP process, the distance between the points where the polishing pad is moved to the left by 10 to 60 mm width from the center point of the wafer by the ball screw and to the right by 10 to 60 mm width from the outer periphery of the wafer is measured in the horizontal direction (X-axis direction). ). The reciprocating swing of the polishing pad is defined as a reference speed when the outer periphery of the polishing pad is located between the center point and the outer periphery of the wafer. The moving speed is increased so that dishing is performed uniformly. For example, when the swing width is 40 mm and the swing speed when the outer periphery of the polishing pad is located between the center point and the outer periphery of the wafer is 300 mm / min, the swing speed of the polishing pad at the center point of the wafer is 260 mm. / Min, and the swing speed of the polishing pad at the outer peripheral portion of the wafer is 320 mm / min.

The pressure of the polishing pad on the wafer surface is 50 to
150 g / cm ² . When the chemical mechanical polishing in the first polishing zone s2 has been performed for a desired time, the spindle shaft 3 is raised and retracted to the right, and guided onto the pad cleaning mechanism 5, where high-pressure jet water is sprayed from the nozzle 5b. While removing the abrasive grains and metal polishing debris adhered to the front pad surface with the rotating brush 6, the polishing pad is transferred to the right again, and waits on the polishing zone s2.

3) The index table is rotated clockwise by 90 degrees, the polished wafer w1 is guided to the second polishing zone s3, and the spindle shaft 3 is moved down so that the head 2
The polishing pad 4 attached to the wafer b is pressed against the roughly polished wafer w1, and the spindle mechanical shaft and the chuck mechanism are rotated to perform the chemical mechanical finish polishing of the wafer.
After finishing polishing, the spindle shaft 3 is raised and retracted to the right, the polishing pad attached to the head 2b is cleaned by the cleaning mechanism 5, and transferred to the right again, and the second polishing zone is moved.
On standby s3.

During this time, a new wafer w3 is placed on the temporary table and transferred to the wafer loading zone s1.
It is sucked by the chuck mechanism 12c. In the first polishing zone s2, the chemical mechanical rough polishing of the wafer w2 is performed.

4) The index table 12 is rotated clockwise by 90 degrees to guide the polished wafer w1 to the unloading zone s4. Next, the wafer polished and finished by the unloading transfer robot 13 is placed on the temporary table 1.
5 and after cleaning the back surface, further transfer robot 13
The cleaning liquid is sprayed from a nozzle 17 onto the polished wafer pattern surface to clean the wafer, and the wafer is further guided to the next step.

During this time, a new wafer w4 is placed on the temporary table and transferred to the wafer loading zone s1.
It is sucked by the chuck mechanism 12d. In the first polishing zone s2, chemical mechanical rough polishing of the wafer w3 is performed, and in the second polishing zone s3, chemical mechanical finish polishing of the wafer w2 is performed.

5) The index table 12 is rotated clockwise by 90 degrees, and the same operations as in the above steps 2) to 4) are repeated to perform chemical mechanical polishing of the wafer. In the above example, the chemical mechanical polishing is divided into the first rough polishing and the second finish polishing in order to reduce the throughput time, but the CMP may be performed in one step,
Medium finishing polishing and finishing polishing may be divided into three stages to further reduce the throughput time. When a three-step CMP process is performed, s1 is used for wafer loading and wafer unloading.
S2 is the first polishing zone, s2
3 is a second polishing zone, and s4 is a third polishing zone.

The material of the polishing pad may be different from that of the first polishing pad and the second polishing pad. The chemical mechanical polishing apparatus of the present invention can of course be used for removing an insulating layer film of a substrate having an insulating layer film formed on a metal pattern and removing a P-TEOS film layer of STI.

[0041]

EXAMPLE 1 A silicon substrate having a copper film provided on a silicon oxide insulating film having a diameter of 300 mm was used as a substrate, a slurry for polishing a copper film of Company A was used as an abrasive at a rate of 50 ml / min, and a polyurethane was used as a polishing pad. Center part 5 of a 150 mm outer diameter disk made of resin
An annular pad having a diameter of 0 mm is used as a polishing apparatus by using the automatic chemical mechanical polishing apparatus shown in FIG. 1 as a polishing apparatus. Pressure 1.
4 psi (100 g / cm ² ), and the horizontal swing width is 54
mm (the swing start point is 27 mm left inside from the substrate outer diameter and 27 mm right inside from the substrate center point), and the swing speed is 260 m from the left inner 27 mm from the board outer diameter to the substrate outer periphery.
m / min, 320 mm / min at the substrate center point from the right inner side 27 mm from the substrate center point, 300 m between them
Polishing at m / min (throughput time 3.0
Min) to obtain a wafer having a pattern width of 150 μm.

The dishing was 18 nm. Comparative Example 1 In Example 1, a disk-shaped pad made of polyurethane resin and having an outer diameter of 150 mm was used as the polishing pad, the rotation speed of the substrate chuck table was 400 rpm, the rotation speed of the polishing pad was 700 rpm, and the polishing pad applied to the substrate. The pressure was 1.4 psi (100 g / cm ² ), the horizontal swing width was 54 mm (the swing start point was 27 mm left inside from the outer diameter of the substrate, 27 mm right inner from the center of the substrate), and the swing speed was outside the substrate. Polishing is performed at 260 mm / min from the left inner side of the diameter to the substrate outer circumferential side at 260 mm / min, at 320 mm / min from the right inner side of the substrate 27 mm to the substrate central point, and at 300 mm / min between them (throughput time 3. (0 min), a wafer having a pattern width of 150 μm was obtained.

The dishing was 241 nm. Comparative Example 2 In Example 1, an elliptic disk-shaped pad made of polyurethane resin and having a major axis of 160 mm and a minor axis of 80 mm was used as the polishing pad, and the number of rotations of the substrate chuck table was 400.
rpm, the rotation speed of the polishing pad is 700 rpm, and the pressure of the polishing pad applied to the substrate is 1.4 psi (100 g / cm
² ), the horizontal swing width is 54 mm (the swing start point is 27 mm left inside from the substrate outer diameter, and 27 mm right inside from the substrate center point), and the swing speed is 27 mm left inside from the substrate outer diameter to the substrate outer periphery. Is 260 mm / min, and 320 mm / min at the substrate center point from the right inner side 27 mm from the substrate center point.
And polishing is performed at a rate of 300 mm / minute (throughput time: 3.0 minutes), and the pattern width is 150 μm.
m wafers were obtained.

The dishing was 124 nm. FIG. 6 shows the correlation between the dishing of the wafer and the polishing pad rotation speed obtained when the polishing was performed while changing the rotation speed of the polishing pad in Example 1, Comparative Example 1, and Comparative Example 2.

In Example 1 and Comparative Example 1, the rotation speed of the wafer substrate was 400 rpm, and the rotation speed of the polishing pad was 700 rpm.
FIG. 7 shows the correlation between the pattern density of the insulating layer and the erosion when the polishing was performed at a polishing pad pressure of 1.4 psi for the wafer.

In Example 1 and Comparative Example 1, the rotational speed of the wafer substrate was 400 rpm, and the rotational speed of the polishing pad was 700 rpm.
FIG. 8 shows the correlation between the pattern width and the dishing when the polishing was performed with the polishing pad pressure at 1.4 psi and the polishing pad pressure at 1.4 psi.

Example 2 In Example 1, as a wafer, a 15-nm silicon oxide insulating layer was formed on the surface of a 300-mm-diameter silicon substrate, a 200-nm silicon nitride insulating layer was formed thereon, and a 800-nm silicon nitride insulating layer was formed thereon.
STI substrate provided with m-P-TEOS layer (trench width 2
Polishing was carried out for 4 minutes in the same manner except that a polishing slurry containing 1% by weight of cerium oxide abrasive grains of Company B was used as a polishing agent.

The erosion of the trench was 41 nm and the SiN removed was 12 nm. FIG. 9 shows the correlation between the trench width and the erosion, and FIG. 10 shows the correlation between the trench density and the erosion.

FIG. 11 is a flowchart showing a semiconductor device manufacturing process. After the semiconductor device manufacturing process is started, first, in step S200, an appropriate processing step is selected from the following steps S201 to S204. Steps S201 to S20 according to the selection
Go to any of 4

Step S201 is an oxidation step for oxidizing the surface of the wafer. Step S202 is a CVD step of forming an insulating film on the wafer surface by CVD or the like. Step S203 is an electrode forming step of forming electrodes on the wafer by steps such as vapor deposition. Step S204 is an ion implantation step of implanting ions into the wafer.

After the CVD step or the electrode forming step,
Proceed to step S205. Step S205 is a CMP process. In the CMP process, the polishing apparatus according to the present invention performs flattening of an interlayer insulating film, formation of a damascene by polishing a metal film on the surface of a semiconductor device, and the like.

After the CMP step or the oxidation step, the process proceeds to step S206. Step S206 is a photolithography step. In the photolithography process, a resist is applied to the wafer, a circuit pattern is printed on the wafer by exposure using an exposure device, and the exposed wafer is developed. Further, the next step S207 is an etching step of removing portions other than the developed resist image by etching, removing the resist, and removing unnecessary resist after etching.

Next, in step S208, it is determined whether or not all the necessary processes have been completed.
Returning to 0, the previous steps are repeated to form a circuit pattern on the wafer. If it is determined in step S208 that all steps have been completed, the process ends.

In the method of manufacturing a semiconductor device according to the present invention, since the chemical mechanical polishing apparatus according to the present invention is used in the CMP process, the CM requirement is satisfied by satisfying the market requirements for dishing and erosion in the CMP process.
The yield in the P process is improved. As a result, there is an effect that a semiconductor device can be manufactured at a lower cost than a conventional semiconductor device manufacturing method.

The polishing apparatus according to the present invention may be used in a CMP process of a semiconductor device manufacturing process other than the semiconductor device manufacturing process described above.

[0056]

By performing chemical mechanical polishing using the polishing apparatus having the annular polishing pad of the present invention, dishing and erosion are suppressed, and a device wafer having a uniform pattern thickness is obtained. be able to. further,
Dishing, erosion and erosion are performed by performing chemical mechanical polishing by changing the speed of swinging in the left-right direction on the substrate having the metal film formed on the insulating layer depending on the position of the polishing pad with respect to the substrate.
John is further suppressed.

The removal of the insulating layer film of the substrate having the insulating layer film formed on the metal pattern and the removal of the P-TEOS film layer of the STI can be performed while suppressing erosion and dishing. it can.

Further, the present invention improves the yield by satisfying the market requirements for dishing and erosion in the CMP process, thereby manufacturing a semiconductor device at a lower cost than a conventional semiconductor device manufacturing method. And a method for manufacturing a semiconductor device.

[Brief description of the drawings]

FIG. 1 is a perspective view of a polishing apparatus.

FIG. 2 is a perspective view of a polishing apparatus.

FIG. 3 is a sectional view illustrating a positional relationship between a polishing head and a conditioning mechanism.

FIG. 4 is a sectional view of a polishing head.

FIG. 5 is a perspective view of a polishing pad.

FIG. 6 is a correlation diagram between the number of rotations of a polishing pad and dishing.

FIG. 7 is a correlation diagram between pattern density and erosion of a substrate.

FIG. 8 is a correlation diagram between a pattern width of a substrate and dishing.

FIG. 9 is a correlation diagram between an STI trench width and erosion.

FIG. 10 is a correlation diagram between STI trench density and erosion.

FIG. 11 is a flowchart showing a semiconductor device manufacturing process.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Chemical mechanical polishing apparatus w Wafer 2 Polishing head 3 Spindle shaft 4 Polishing pad 5 Conditioning mechanism 5a Dressing disk 5b Spray nozzle 5c Protective cover 7 Polishing head transfer mechanism 8 Polishing head elevating mechanism

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme Court II (Reference) (72) Inventor Kiyoshi Tanaka 3009 Jyochi, Atsugi-shi, Kanagawa Semiconductor Company, Okamoto Machine Tool Works, Ltd. (72) Inventor Mitsui Takahiko 3009 Kamiyori, Atsugi City, Kanagawa Prefecture Okamoto Machine Tool Works, Ltd.

Claims (7)

[Claims] 1. A chemical mechanical polishing apparatus for polishing a substrate by relatively moving the polishing pad and the substrate in a state where a polishing liquid is interposed between the polishing pad and the substrate. The chemical mechanical polishing apparatus according to any one of claims 1 to 3, wherein the shape of (1) is an annular body obtained by hollowing out a central portion of a circle or an ellipse into a circle or an ellipse having a smaller diameter. 2. A substrate having a metal film is held on a chuck table with the metal film surface facing upward, and a polishing pad surface adhered to a mounting plate mounted on a spindle shaft having a vertical axis in a vertical direction is freely polished. A chemical mechanical polishing apparatus for relatively pressing against said substrate via abrasive grains, sliding said substrate and a polishing pad to remove at least a part of a metal film on a substrate surface, wherein said polishing pad elevating mechanism And a transfer mechanism capable of reciprocating the polishing pad in the left-right direction, wherein the shape of the polishing pad is an annular body having a central portion of a circle or an ellipse hollowed out in a circular or elliptical shape with a smaller diameter. A polishing pad having a diameter smaller than a diameter of the substrate. 3. An STI substrate having a P-TEOS film is made of P
The TEOS film surface is held on a chuck table with the film surface facing upward, and the polishing pad surface attached to a mounting plate supported on a spindle shaft having a shaft center in a vertical direction is relatively fixed to the substrate via free polishing abrasive grains. A chemical mechanical polishing apparatus that removes at least a part of the P-TEOS film on the surface of the substrate by sliding the substrate and the polishing pad, wherein the polishing pad elevating mechanism and the polishing pad are moved in the left-right direction. The polishing pad has a circular or elliptical hollow body with a smaller diameter at the center of the circle or ellipse. A chemical mechanical polishing apparatus characterized by being smaller than a diameter. 4. A chuck table in which an insulating layer film is formed on a pattern of a metal film with the insulating layer film surface facing upward.
Holding the polishing pad, the surface of the polishing pad attached to a mounting plate which is supported on a spindle shaft having a vertical axis in a vertical direction is relatively pressed against the substrate via loose abrasive grains, and the substrate and the polishing pad are removed. A chemical mechanical polishing apparatus that removes at least a portion of an insulating layer film on a substrate surface by sliding, comprising: a polishing pad elevating mechanism; and a transfer mechanism capable of reciprocating the polishing pad in a left-right direction. The shape of the polishing pad is an annular body obtained by hollowing out the center of a circle or an ellipse into a circle or an ellipse having a smaller diameter, and the diameter of the polishing pad is smaller than the diameter of the substrate. Mechanical polishing equipment. 5. The apparatus according to claim 2, wherein the transfer mechanism has a function of changing a moving speed of the polishing pad in the left-right direction according to a position of the polishing pad with respect to the substrate. Chemical mechanical polishing equipment. 6. The hollow inner diameter of the polishing pad is:
The chemical mechanical polishing apparatus according to claim 1, wherein the length of the polishing pad is 5 to 75% of the outer diameter of the polishing pad. 7. A method for manufacturing a semiconductor device, comprising a step of flattening a surface of a semiconductor wafer using the chemical mechanical polishing apparatus according to claim 1.