JP2001239458A - Chemical mechanical polishing device for substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To uniformize thickness distribution of an edge part of a machined substrate obtained when it is polished using a polishing pad having a smaller diameter than that of the substrate. SOLUTION: In this polishing device in which a substrate w is held on chucks 12a, 12b, 12c, 12d by facing a metallic film face or an insulation film face of the substrate upward, a face of the polishing pad 4 bonded on a mounting plate supported on a spindle shaft having a shaft core in the vertical direction is pressed against the substrate through an abrasive powder liquid, and the polishing pad is reciprocated and oscillated on the substrate to remove a metallic film or an insulation film on a surface of the substrate, a diameter of the polishing pad is smaller than that of the substrate, a substrate end polishing tool 50 having a wider polishing face than a thickness of the substrate on an extended horizontal face of the surface of the substrate held on the chucks is provided independently from the chucks, a position where the substrate end polishing tool is provided is a position where it does not collide against the polishing pad reciprocating and oscillating linearly, and the polishing face of the substrate end polishing tool comes into contact with an end of the substrate and rotates when polishing is done.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an edge of a polishing substrate obtained when a polishing pad having a diameter smaller than the diameter of the substrate is linearly reciprocated on the substrate to perform chemical mechanical polishing.
The present invention relates to a chemical mechanical polishing apparatus capable of providing a substrate having excellent thickness distribution uniformity. The chemical mechanical polishing apparatus according to the present invention includes the steps of: removing a metal film formed on an insulating layer of a substrate; removing an insulating layer film on a substrate surface provided with an insulating layer film on a pattern pattern of the metal film; STI (ShallowTrench Insulator)
It is useful for removing the P-TEOS layer.

[0002]

2. Description of the Related Art A polishing pad mounted on a spindle shaft is used. A polishing slurry is supplied to the surface of the polishing pad while a substrate held by a chuck is pressed against the polishing pad to rotate the pad and the substrate in the same direction or in the opposite direction. While sliding, and
2. Description of the Related Art A chemical mechanical polishing apparatus that reciprocates (oscillates) a polishing pad in one direction on a substrate and performs chemical mechanical polishing (CMP polishing) on the substrate is known (Japanese Patent Application Laid-Open No. 10-303152;
JP-A-11-156711, Patent No. 2968784
No. 2,331,948). 5 to 8 show the chemical mechanical polishing apparatus.

FIG. 5 is a perspective view showing an example of a chemical mechanical polishing apparatus, FIG. 6 is a perspective view showing a polishing pad transfer mechanism, and FIG.
Is a partial cross-sectional view of the polishing pad and the conditioning device,
FIG. 8 is a sectional view of the polishing head.

In the index type chemical mechanical polishing apparatus 1 shown in FIGS. 5, 6 and 7, reference numeral 2 denotes a polishing head, 2a
Is a polishing head for rough polishing, 2b is a head for finish polishing, 3,
3 is a rotating shaft, 3a is a motor, 3b is a gear, and 3c is a gear.
Re, 3d is a gear, 4, 4 is a polishing pad, 5, 5 is a pad conditioning mechanism, 5a is a dressing disk, 5b is an injection nozzle, 5c is a protective cover, 6, 6 is a rotatable cleaning brush, 7 is Polishing head transfer mechanism, 7a
Is a rail, 7b is a feed screw, and 7c is a moving body screwed to the feed screw and has a polishing head 2. 7d and 7e are gears, 7f is a motor, 8 is an air cylinder which is a head elevating mechanism, 9 is a wafer w storage cassette, and 10 is a low.
Robot 11 for transferring wafers, 11 is a temporary wafer mounting table, 12 is a rotatable wafer chuck mechanism 12a, 12b, which is provided at equal intervals on the same circumference with a shaft 12e as an axis.
An index table having 12c and 12d,
The bull 12 is classified into a wafer loading zone of s1, a rough polishing zone of s2, a finishing polishing zone of s3, and a wafer unloading zone of s4.

[0005] 13 is a transfer robot for unloading, 14 a is a chuck dresser, 14 b is a chuck cleaning mechanism, 15 is a temporary wafer mounting table, 16 is a belt conveyor,
Reference numeral 7 denotes a wafer cleaning mechanism.

[0008] In the polishing head 2 shown in FIG. 8, the head 2 has an overhanging edge 21 a of a substrate 21 and a pressing cylinder 20.
The polishing pad (annular polishing cloth) 4 is supported by a substrate 21 via a polishing cloth mounting plate 22. A diaphragm 23 is stretched in a pressurizing chamber 20b in the pressurizing cylinder 20, and compressed air is press-fitted into the pressurizing chamber 20b through the spindle shaft 3, and the substrate 21 is three-dimensionally (X, Y) by the pressure. , Z), and the pad 4 is held parallel to the wafer surface. A polishing liquid or cleaning liquid supply pipe 24 is provided at the center of the head 2, and the end of the pipe faces the back surface of the polishing pad annular body avoiding the central hollow portion 4 a of the polishing pad, and passes through the annular body to the surface of the metal layer of the substrate. Is supplied with a polishing liquid or an etching liquid.

The step of polishing a wafer (substrate) having a metal film on an insulating layer using the chemical mechanical polishing apparatus 1 is performed as follows. 1) The wafer w1 is taken out of the cassette 9 by the arm of the transfer robot 10, placed on the temporary mounting table 11 with the metal film surface facing upward, the back surface thereof is cleaned, and then the index table 12 is transferred by the transfer robot. Uehara-
It is transferred to the ding zone s1 and is sucked by the chuck mechanism 12a.

2) Rotate the index table 12 clockwise by 90 degrees to rotate the wafer w1 in the first polishing zone s.
2, the spindle shaft 3 is lowered, the polishing pad 4 attached to the head 2a is pressed against the wafer w1, and the wafer is chemically and mechanically polished by rotating the spindle shaft 3 and the chuck mechanism. During this time, a new wafer w
2 is placed on the temporary table, transferred to the wafer loading zone s1, and sucked by the chuck mechanism 12b. At the time of CMP processing of the wafer, the abrasive liquid is applied to the back surface of the annular body 4 through the supply pipe 24 provided in the hollow portion of the spindle shaft 3.
It is supplied at a rate of 100 ml / min. The number of rotations of the wafer adsorbed on the chuck table is 200 to 800 rpm.
m, preferably 200 to 600 rpm, and the rotation speed of the polishing pad is 400 to 3000 rpm, preferably 400 to 1
000 rpm and the pressure on the substrate is 1.2-3 psi.

During the CMP process, the polishing pad 4 is rotated by a ball screw to the left of the center point O of the wafer at an 8th to 2nd point of the radius of the substrate (for a 200 mm diameter wafer and a 150 mm outer diameter polishing pad, The position of the quarter point (about 25 mm) is defined as a swing start point (Xo), and a width of about 10 to 50 mm, preferably 20 to 50 mm to the left (toward the periphery of the wafer) from the start point position.
The position of 40 mm is defined as the swing end point (Xe), and the distance (L) between them is reciprocated in the left-right direction (X-axis direction) (see FIG. 9).

When the chemical mechanical polishing in the first polishing zone s2 has been performed for a desired time, the spindle shaft 3 is raised and retracted to the right, and guided onto a pad cleaning mechanism 5, where high-pressure jet water is jetted. Abrasive particles and metal polishing debris attached to the front pad surface are removed by the rotating brush 5 while spraying from the polishing pad 5b, and the polishing pad is transported to the right again.
Wait on top.

3) The index table is rotated clockwise by 90 degrees, the polished wafer w1 is guided to the second polishing zone s3, and the spindle shaft 3 is moved down so that the head 2
The polishing pad 4 attached to the wafer b is pressed against the roughly polished wafer w1, and the spindle mechanical shaft and the chuck mechanism are rotated to perform the chemical mechanical finish polishing of the wafer.
After finishing polishing, the spindle shaft 3 is raised and retracted to the right, the polishing pad attached to the head 2b is cleaned by the cleaning mechanism 5, and transferred to the right again, and the second polishing zone is moved.
On standby s3. During this time, a new wafer w3 is placed on the temporary mounting table, transferred to the wafer loading zone s1, and sucked by the chuck mechanism 12c. In the first polishing zone s2, the chemical mechanical rough polishing of the wafer w2 is performed.

4) The index table 12 is rotated 90 degrees clockwise to guide the polished wafer w1 to the unloading zone s4. Next, the wafer polished and finished by the unloading transfer robot 13 is placed on the temporary table 1.
5 and after cleaning the back surface, further transfer robot 13
The cleaning liquid is sprayed from a nozzle 17 onto the polished wafer pattern surface to clean the wafer, and the wafer is further guided to the next step. During this time,
A new wafer w4 is placed on the temporary table, and the wafer
It is transferred to the ding zone s1 and is sucked by the chuck mechanism 12d. In the first polishing zone s2, the chemical mechanical rough polishing of the wafer w3 is performed, and in the second polishing zone s3, the chemical mechanical finish polishing of the wafer w2 is performed.

5) The index table 12 is rotated clockwise by 90 degrees, and the same operations as in the above steps 2) to 4) are repeated to perform chemical mechanical polishing of the wafer.

In the above example, the chemical mechanical polishing is divided into two stages of the first rough polishing and the second finish polishing in order to reduce the throughput time. However, the CMP may be performed in one stage. Alternatively, rough polishing, medium finish polishing, and finish polishing are divided into three stages to further reduce the throughput time. When a three-step CMP process is performed, s1 is used as a wafer loading and unloading zone.
S2 is the first polishing zone, and s3 is the second polishing zone.
And s4 is a third polishing zone (an example of a CMP apparatus shown in FIG. 1 described later).

The material of the polishing pad may be different from that of the first polishing pad and the second polishing pad. The abrasive slurry may also vary.

The substrate is held on a chuck table with the surface of the metal film or the surface of the insulating layer (including the surface where both are mixed) facing upward, and is mounted on a spindle shaft having a vertical axis with respect to the substrate. The surface of the polishing pad adhered to the attached mounting plate is pressed through loose polishing abrasive grains (abrasive)) to slide the substrate and the polishing pad, and reciprocally oscillate the polishing pad smaller in diameter than the substrate diameter. In chemical mechanical polishing by removing at least a part of the metal film or the insulating film on the substrate surface, the thickness distribution of the edge portion of the substrate polished by CMP due to the small diameter of the polishing pad is compared with the thickness of the central portion of the substrate. Two
There is a disadvantage that it becomes 30% thicker.

Therefore, after CMP polishing, it is necessary to chamfer the edge of the substrate in order to make the overall thickness distribution of the substrate uniform. In addition, when the polishing pad reciprocates and reciprocates, and the polishing pad protrudes from the outer periphery of the substrate, there is no support for the protruding polishing pad portion. A thick mountain portion is formed on the inner portion near the outer periphery, and C
There is a disadvantage that non-uniformity of the MP polished substrate occurs.

[0018]

SUMMARY OF THE INVENTION The present invention relates to a chemical mechanical polishing apparatus which uses a polishing pad having a small diameter relative to the substrate diameter and performs CMP polishing of the substrate while swinging the polishing pad.
It is an object of the present invention to provide a chemical mechanical polishing apparatus capable of performing edge processing of a substrate simultaneously with CMP polishing of the substrate. Another object of the present invention is to provide a chemical mechanical polishing apparatus that provides a processed substrate with no non-uniformity.

[0019]

SUMMARY OF THE INVENTION According to one aspect of the present invention, a substrate is held on a chuck with a metal film surface or an insulating film surface of the substrate facing upward and a spindle shaft having a vertical axis with respect to the substrate is provided. The surface of the polishing pad attached to the mounted mounting plate is pressed with an abrasive solution, and the chuck holding the substrate and the polishing pad are slid, and the polishing pad is linearly moved horizontally on the substrate. A chemical mechanical polishing apparatus used to remove at least part of a metal film or an insulating film on a substrate surface by reciprocatingly oscillating, wherein the polishing pad diameter is smaller than the diameter of the substrate, On the extended horizontal surface of the held substrate surface, a substrate edge polishing tool having a polishing surface wider than the thickness of the substrate is provided independently of the chuck, and the position where the substrate edge polishing tool is provided is Polishing pad that reciprocates linearly A chemical mechanical polishing apparatus for a substrate, characterized in that the polishing surface of the substrate end polishing tool abuts on the edge of the substrate and rotates when the substrate is chemically mechanically polished. Things.

Since the edge portion of the substrate is polished or ground simultaneously with the surface CMP of the substrate, the process can be omitted once.

According to a second aspect of the present invention, in the chemical mechanical polishing apparatus, the polishing pad is further provided on an extended horizontal surface of the surface of the substrate held by the chuck when the polishing pad linearly reciprocates on the substrate. A guide member for supporting the surface of the polishing pad portion protruding from the outer periphery is provided independently of the chuck.

Since the surface of the polishing pad portion protruding from the outer periphery of the substrate is supported by the guide member, the spindle shaft is prevented from tilting, and a processed substrate having a good thickness distribution can be obtained. Further, since the guide member is fixedly provided independently of the rotating chuck, its surface area can be reduced, and wear of the polishing pad due to the guide agent can be reduced.

According to a third aspect of the present invention, the outer diameter r of the polishing pad of the chemical mechanical polishing apparatus is 1/2 to 3/3 of the diameter R of the substrate.
4, and the reciprocating swing width of the polishing pad is 20 to 60 mm.

By making the diameter of the polishing pad smaller than the diameter of the substrate, it is possible to increase the number of changes in the swing speed and the swing acceleration of the polishing pad. Further, during the CMP polishing, the polishing state of the metal layer and the insulating layer of the substrate can be visually observed, and
The thickness of the substrate can be measured by the sensor, and the polishing state can be observed by the color identification sensor and the color identification camera, and the end point of polishing can be easily detected.

According to a fourth aspect of the present invention, in the chemical opportunity polishing apparatus, the chuck for holding the substrate is formed by hollowing out the index tables provided at equal intervals on the concentric circle of the axis of the index table. The four guide holes are independently rotatable, and the guide member has an arc shape having a size that surrounds 1/4 to 1/2 of the outer circumference of the chuck, and the polishing pad swings for each chuck. And fixed to the index table in the direction in which it is to be mounted.

By using an index table type chemical mechanical polishing apparatus, the throughput time for processing a substrate can be reduced.

[0027]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings. FIG. 1 shows the chuck of the chemical mechanical polishing apparatus
FIG. 2 is a sectional view taken along the line II in FIG. 1, FIG. 3 is a partial side view of the guide member viewed from the II-II direction in FIG. 1, and FIG. 4 is a line III in FIG. Cross-sectional view of the substrate edge polishing tool viewed from the -III direction,
FIG. 12 is a plan view of an index table provided with four chucks of a chemical mechanical polishing apparatus according to another embodiment.

In FIG. 1, the index table 12
Is a substrate loading / unloading zone s1,
The first polishing zone s2, the second polishing zone s3, and the third polishing zone s4 are instructed to rotate intermittently by 90 degrees. Chucks 12a and 12 for holding a substrate
The b, 12c, and 12d are provided at equal intervals on the concentric circle of the axis of the index table 12, and each of the four b, 12c, and 12d is independently rotatably provided in a hole 12f formed by hollowing the index table. The guide member 30 has an arc shape having a size that surrounds 1/4 to 1/2 of the outer circumference of the chuck, and has an index tee in a direction in which the polishing pad 4 swings for each of the chucks 12a, 12b, 12c, and 12d. Bull 12
(See FIG. 2) The guide members 30, 30, 30, 30 provided fixed to each chuck and provided for each chuck are provided at point contrast positions rotated by 180 degrees with respect to the axis of the index table. Can be

The guide member 30 is provided on the outer periphery of the chuck in the swinging direction of the polishing pad (the direction of the arrow in FIG. 1). Since the index table 12 is rotated 90 degrees at a time, the guide members 30 are present in the swinging directions of the polishing pad in the respective zones s1, s2, s3, and s4.
Reference numerals 30, 30, and 30 are provided at point-symmetric positions rotated by 180 degrees with respect to the axis of the index table. The guide member 30 may be divided into two parts 30a and 30b as shown in FIG. The surface height of the guide member 30 is the same as the surface height of the substrate on the chuck or the thickness of the layer to be polished and removed from the surface height of the substrate.
10 to 10 μm).

The third arm 10c and the suction pad 10d of the transfer robot 10 are indicated by phantom lines in FIG.
c is configured to be rotatable about the axis O. The claw 10e of the transfer robot can be inserted into the space 30c of the guide member 30a. The substrate end polishing tool 50 is provided on an index table 12 base as shown in an enlarged view in FIG. 4, and a shaft 52 rotatably provided by bearings 51, 51.
A disc-shaped fixing tool 53 is attached to the upper end of the fixing tool, and a felt or grindstone 53a is provided on the surface of the fixing tool. The polishing surface 53 of the substrate edge polishing tool 50 is rotated by the rotation of the substrate w.
The fixing tool 53 provided with a rotates together. Polished surface 53
a may be provided with a Japanese drum-shaped groove wider than the thickness of the substrate.

In FIG. 2, reference numeral 40 denotes a fixing base for the ceramic porous chuck 12a, and reference numeral 41 denotes an air supply pipe for depressurizing or pressurizing the ceramic porous chuck 12a and a pipe also serving as a cleaning liquid supply pipe. Guide member 30
May be flat with a surface roughness of 0.1 μm or less, or arc-shaped grooves 30d, 30d, 30d having a width of 0.5 to 3 mm and a depth of 0.3 to 3 mm may have a pitch interval of 1 to 5 mm. A large number may be provided for each. The guide member is formed using aluminum, polyfluoroethylene, ceramics or the like as a material.

Examples of the polishing pad material include hard urethane sheet, polyfluoroethylene sheet, polyester fiber non-woven fabric, felt, polyvinyl alcohol fiber non-woven fabric, nylon fiber non-woven fabric, and foamable urethane resin solution on these non-woven fabrics. What is cast, then foamed and cured is used. As the pad shape, a disk shape, a donut shape, or an elliptical shape is used, and the thickness is 3 to 7 mm.
Is used by being attached to a mounting plate such as an aluminum plate or a stainless steel plate. Preferably, an annular polishing pad shown in FIG. 10 is used. The hollow inner diameter li of the annular polishing pad is 15 to 75 times the length of the polishing pad outer diameter lo.
%, Preferably 30 to 50%. Substrate w to be polished
The outer diameter r of the polishing pad with respect to the outer diameter R of
It is 0.75 times.

The polishing liquid is (a) colloidal alumina,
0.01-20% by weight of solid abrasive grains such as fumed silica, cerium oxide, titania, and (b) copper nitrate, iron citrate,
1 to 15% by weight of an oxidizing agent such as manganese peroxide, ethylenediaminetetraacetic acid, hexacyanoiron, hydrofluoric acid, fluorotitanic acid, dipersulfate, ammonium fluoride, ammonium hydrogen difluoride, ammonium persulfate, hydrogen peroxide, etc. (C) 0.3 to 3% by weight of a surfactant,
A slurry containing (d) a pH adjuster, (e) a preservative, and the like is used (JP-A-6-313164, JP-A-8-197414, JP-A-8-51037, and JP-A-10-104). 67986, JP-A-10-226784, etc.). Abrasive slurries suitable for polishing metals such as copper, copper-titanium, copper-tungsten, and titanium-aluminum are available from Fujimi Incorporated Co., Ltd., Roder Nitta Co., Ltd., Cabot Corporation in the United States, Available from Olin Arch Inc., USA.

The swing distance (L) of the polishing pad when the substrate is chemically and mechanically polished using the chemical and mechanical polishing apparatus is 200 m.
Preferably, the substrate has a diameter of 20 to 50 mm for a substrate having an m diameter, and 20 to 60 mm for a substrate having a diameter of 300 mm. Oscillation of the polishing pad is performed by rotating the polishing pad 4 with a ball screw to the left of the center point O of the wafer at an 8th or 2nd point of the radius of the substrate (for a 200 mm diameter substrate and an annular pad having an outer diameter of 150 mm). Is about 25 mm of the quarter point) as the swing start point (Xo),
Approximately 10 to the left (toward the outer periphery of the wafer) from this start point.
A swing end point (Xe) having a width of ５０50 mm, preferably 20-40 mm is set as a swing end point (Xe), and the distance (L) therebetween is swinged back and forth.

The reciprocating swing of the polishing pad is defined as a reference speed when the outer periphery of the polishing pad is located between the center point and the outer periphery of the substrate. In the portion, the swinging speed of the polishing pad is increased so that dishing is performed uniformly, and the swinging speed is set to n times (5 to 3) when the substrate diameter is 200 mm.
(0 times), it is preferable to make a change to increase or decrease for a while. When the diameter of the substrate is 300 mm, the swing width (L) is 2
A change is made to increase or decrease the swinging speed temporarily for 0 to 60 mm and for 5 to 50 times.

For example, on a substrate with a diameter of 200 mm, the speed change is made until the swing width (L) reaches 36 mm at a position where the swing start point (Xo = Po) is 25 mm to the left of the wafer center point.
In the case of rotation, the swing start point (Xo = Po) to the swing end point (X
During the movement up to e = P ₉ ), the swing speed of the polishing pad is changed nine times as shown in FIG.

In FIG. 11, the swing start point (Xo = P
The swing speed in o) is 0 mm / min, and the swing speed is 400 mm / min from Po to the first conversion point (P1).
The maximum speed of 30 from 1 to the second conversion point (P2)
The speed is temporarily increased to be 00 mm / min, and the speed is 2000 mm / min from P2 to the third conversion point (P3).
Speed 1000mm from to the fourth conversion point (P4)
/ Min, speed 5 from P4 to the fifth conversion point (P5)
00 mm / min, the speed temporarily decreased to 100 mm / min from P5 to the sixth conversion point (P6), and increased to 200 mm / min from P6 to the seventh conversion point (P7).
Min, the peak speed reaches 2000 mm / min from P7 to the eighth conversion point (P8), and then decelerates from P8 to the ninth conversion point (Xe = P9) at the end of swing. The swing speed is changed so that the swing speed at the ninth conversion point (P9) is 0 mm / min.

The position of Po on the substrate is 2 from the center of the substrate.
5 mm, P1 is 29 mm from the substrate center point, P2 is 33 mm from the substrate center point, P3 is 37 mm from the substrate center point, P3
4 is 41 mm from the substrate center point, and P5 is 4 mm from the substrate center point.
5 mm, P6 is 49 mm from the substrate center point, P7 is 53 mm from the substrate center point, P8 is 57 mm from the substrate center point, and P9 at the swing end point is 61 mm from the substrate center point. When the polishing pad reaches the swing end point P9 (Xe) and the swing speed becomes 0 mm / min, the swing direction of the polishing pad is changed to the direction of the center point O of the substrate, and P8, P7, P6, P5,
P4, P3, P2, P1, and the rocking speed at each position to the rocking start point Po (2000 mm / min, 20 mm
0 mm / min, 100 mm / min, 500 mm / min, 100
0 mm / min, 2000 mm / min, 3000 mm / min, 4
(00 mm / min, 0 mm / min).

The swing speed, the number of changes in the swing speed, the position of the end point of the swing, and the number of appearances of the peak speed depend on the type of substrate used,
It depends on the diameter, outer diameter of the polishing pad, etc. However, to change the swing speed, the swing speed is changed from the swing start point Po to the swing end point Pn.
0 mm / min, the speed is temporarily reduced when the speed increases from the temporary speed increase to the maximum speed, and the speed is temporarily increased again, the peak speed, and the speed is temporarily reduced again.
The pattern tends to be 0 mm / min.

As another embodiment of the present invention, an index table 12 provided with a substrate end polishing tool 50 as shown in FIG. 12 but having no guide may be used. Further, the fixture of the substrate end polishing tool 50 may be structured to be driven by a motor.

[0041]

EXAMPLES Example 1 A silicon substrate having a copper film provided on a silicon oxide insulating film having a diameter of 200 mm as a substrate was used as a polishing agent, and a polishing slurry for a first step copper film of Fujimi Incorporated was used as a polishing agent (prototype product). ) At a volume of 75 ml / min.
Made of Le Polyurethane resin (Product name: IC1000)
An annular pad obtained by hollowing out a center portion of a circular plate having an outer diameter of 150 mm and a circle having a diameter of 50 mm was used as a polishing device as an index table, a chuck, a guide member, a substrate end polishing tool and a three-head polishing tool shown in FIG. Using an automatic chemical mechanical polishing apparatus equipped with a polishing pad, the rotation speed of the substrate chuck table is 200 rpm in a counterclockwise direction, the rotation speed of the polishing pad is 400 rpm in a clockwise direction, and the pressure of the polishing pad applied to the substrate is 2.
8 psi (200 g / cm ² ), and the horizontal swing width is 36
mm (the swing start point is 26 mm outside diameter from the center of the substrate), and the swing speed is 9 within one swing width (L) as shown in FIG.
Chemical mechanical polishing was performed for 60 seconds while changing the number of times. The copper removal rate is 7550 Å / min and the non-uniformity is 2.
4%.

Comparative Example 1 In Example 1, a CMP apparatus (without a guide member) shown in FIG. 5 was used as a chemical mechanical polishing apparatus, and a disk-shaped pad made of polyurethane resin and having an outer diameter of 150 mm was used as a polishing pad. The width of the polishing pad is 54m.
m (the oscillation start point was 27 mm from the substrate center point), and the copper film-clad substrate was subjected to chemical mechanical polishing at a constant speed of 300 mm / min without changing the oscillation speed. The copper removal rate was 3540 Å / min and the non-uniformity was 7.8%.

[0043]

According to the chemical mechanical polishing apparatus of the present invention, the edge of the substrate is polished simultaneously with the chemical mechanical polishing of the surface of the substrate, so that one step can be reduced. In addition, since the polishing pad portion that deviates from the outer periphery of the substrate when the polishing pad swings is supported by the guide member, the inclination of the spindle shaft is suppressed, and the flatness (Non-Uniformity) is reduced.
A processed substrate excellent in the above can be obtained.

[Brief description of the drawings]

FIG. 1 is a plan view showing a positional relationship among an index table, a chuck, and a guide member of a CMP apparatus according to the present invention.

FIG. 2 is a partial sectional view taken along a line II in FIG.

FIG. 3 is a side view of the guide member viewed from the II-II direction in FIG.

FIG. 4 is a partial cross-sectional view of the substrate edge polishing tool taken along the line III-III in FIG.

FIG. 5 is a perspective view of a known CMP apparatus.

FIG. 6 is a perspective view of a polishing apparatus.

FIG. 7 is a sectional view showing a positional relationship between a polishing head and a conditioning mechanism.

FIG. 8 is a sectional view of a polishing head.

FIG. 9 is a diagram illustrating a positional relationship between a substrate and a swing start point of a polishing pad.

FIG. 10 is a perspective view of a polishing pad.

FIG. 11 is a diagram showing a swing speed change pattern of a polishing pad.

FIG. 12 is a plan view of an index table used in a chemical mechanical polishing apparatus showing another embodiment.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Chemical mechanical polishing apparatus w Substrate L Swing width 2 Polishing head 3 Spindle shaft 4 Polishing pad 7 Polishing head transfer mechanism 8 Polishing head elevating mechanism 12 Index table 12a, 12b, 12c, 12d Chuck 30 Guide member 50 Substrate edge polishing Ingredient

 ────────────────────────────────────────────────── ─── Continued on the front page F term (reference) 3C058 AA07 AA09 AA11 AA14 AA18 AB04 AB08 AC04 BA07 CB08 CB10 DA17

Claims (4)

[Claims] 1. A polishing apparatus, comprising: holding a substrate on a chuck with a metal film surface or an insulating film surface of the substrate facing upward, and affixing to a mounting plate supported by a spindle shaft having a vertical axis with respect to the substrate. Pressing the pad surface through the polishing agent liquid, sliding the chuck and the polishing pad holding the substrate, and swinging the polishing pad linearly and reciprocally in the horizontal direction on the substrate, thereby reducing the surface of the substrate. A chemical mechanical polishing apparatus used to remove at least a part of a metal film or an insulating film, wherein the polishing pad diameter is smaller than the diameter of the substrate, and the polishing pad diameter is on an extended horizontal surface of the surface of the substrate held by the chuck. The substrate end polishing tool having a polishing surface wider than the thickness of the substrate is provided independently of the chuck, and the position at which the substrate end polishing tool is provided is a polishing pad that reciprocates and swings linearly. Collision-free position Chemical mechanical polishing during contact with an end polished surface of the substrate of the substrate edge polishing tool, a chemical mechanical polishing apparatus of the substrate, characterized in that has a structure to rotate. 2. A guide member for supporting a surface of a polishing pad portion protruding from an outer periphery of the substrate when the polishing pad linearly reciprocates on the substrate on an extended horizontal plane of the surface of the substrate held by the chuck. The chemical mechanical polishing apparatus for a substrate according to claim 1, wherein the substrate is provided independently of the chuck. 3. An outer diameter r of the polishing pad is one of a diameter R of the substrate.
/ 2 to 3/4, and the reciprocating swing width of the polishing pad is 20 to
The chemical mechanical polishing apparatus for a substrate according to claim 1, wherein the apparatus is 60 mm. 4. A chuck for holding a substrate is provided with four independently rotatable holes in hollow holes formed at equal intervals on concentric circles of the axis of the index table. The guide member has an arc shape having a size that surrounds 1/4 to 1/2 of the outer periphery of the chuck, and is fixed to an index table in a direction in which the polishing pad swings for each chuck. 3. The chemical mechanical polishing apparatus for a substrate according to claim 2, wherein: