509993 A7 ____B7___ 五、發明說明（I ) 【發明之詳細說明】 【發明所屬之技術領域】 本發明，係一種CMP裝置(化學機械拋光裝置），其邊 對拋光墊與拋光對象物之間供給拋光劑(slurry)，邊使拋光 墊與拋光對象物進行相對運動，以同時進行化學方式之拋 光及機械方式之拋光。 【習知技術】 就周知之CMP裝置（日本之特開平6-21028號、特開平 7-266219號、特開平8-192353號、特開平8-293477號、特 開平10-173715號、特開平11-156711號、英國公開專利第 2331948號公報等)而言，用主軸(spindle)支撐貼有拋光墊之 轉盤並加以旋轉，並且在面向該轉盤之夾頭上保持一拋光 對象物並加以旋轉，邊對拋光墊面供給拋光劑’邊壓接保 持於夾頭上之拋光對象物，使拋光墊及拋光對象物往同一 方向或相反方向進行相對旋轉，而且邊搖動拋光墊’邊拋 光拋光對象物。 拋光墊之素材上，有硬質發泡聚氨酯片、聚酯纖維不 織布、毛氍、聚乙烯醇纖維不織布、尼龍纖維不織布’使 發泡性聚氨酯樹脂溶液散布於這些不織布上。 從前，拋光墊之形狀爲圓形，與被拋光基板之形狀相 同，並且將厚度3〜7mm之拋光墊貼在鋁板、不鏽鋼板等 轉盤上後才使用。 又，以前都是使用形狀比拋光對象物爲大之拋光墊’ 然而，因在其周邊部之圓周速度與在其中心部之圓周速度 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------------丨丨訂--------- (請先閱讀背面之注意事項再填寫本頁) 509993 A7 ______B7____ 五、發明說明（Ό 兩者之差距大，故要進行平均的拋光有困難，還有因讓具 大尺寸的轉盤高速旋轉也有困難等因素，故最近開始使用 小口徑墊，亦即形狀比拋光對象物爲小之拋光墊。 一般決定拋光量的公式上，使用如下所示之Preston的 公式。 V 二 η · P · v · t 在此，V是拋光速度，η是常數，P是拋光墊與拋光對 象物之接觸壓力，v是拋光墊與拋光對象物之相對線速，t 是拋光墊與拋光對象物之接觸時間。爲進行均勻的拋光， 由該V所決定之拋光速度在拋光對象物各點都必須大約相 等。 在使用小口徑墊之拋光方式之場合，因在某一瞬間拋 光著拋光對象物之一部分，而爲了確保高拋光速度、拋光 的均勻性，故都採用以使拋光墊突出(overhang)拋光對象物 之搖動條件來拋光的方法。 然而，若使拋光墊突出拋光對象物，拋光墊與拋光對 象物之接觸面積就因搖動而變化，而使單位面積之負荷改 變。又，在使用隔膜(diaphragm)方式之加壓機構的場合， 拋光墊之傾斜度、負荷將因突出拋光對象物而發生變化。 .因此，在拋光時間內之相對線速積分値與負荷積分値之兩 者的積在拋光對象物面內各點均不相等。亦即，將進行不 平均的拋光。 於是，爲讓兩者的積相等，故有藉由搖動位置來使搖 動速度可變（利用拋光對象物與拋光墊之接觸時間來調整) 4 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公釐) ------------裝--------訂------ !羲 (請先閱讀背面之注意事項再填寫本頁) 509993 A7 __B7__ 五、發明說明（》） 之方法，也有將荷重控制成一定之方法。 【發明欲解決之課題】 然而，在藉由搖動位置來使搖動速度可變之場合，有 均勻拋光的可變速條件複雜、所決定的指令速度機械系統 無法跟上之問題發生。又，在藉由搖動位置將壓力控制成 單位面積之荷重一定之場合，有由於加壓流體之壓縮性等 而產生控制延遲的問題。因此，使用小口徑墊之拋光裝置 難以將拋光對象物均勻地拋光。 【發明之揭示】 本發明係有鑑於以上問題點而完成者，其目的爲提供 一種CMP裝置、及使用該CMP裝置之半導體元件之製造 方法，使得在使用小口徑的場合，也能均勻地拋光拋光對 象物。 爲達成前述目的之第1發明是一種CMP裝置(化學機 械拋光裝置），係把比拋光對象物爲小的拋光墊相對地壓在 拋光對象物上，使拋光對象物及拋光墊邊以兩者間產生相 對運動之方式都進行旋轉，邊搖動拋光墊，來進行拋光； 其特徵在於拋光墊之形狀滿足以下條件： 在拋光時間內拋光墊與拋光對象物之間的相對線速度 .之積分値、壓力之積分値、及接觸時間之積分値三者的積 ，係在拋光對象物面上所有的點，均佔由該三者的積在拋 光對象物面上所有的點之値當中的平均値之±30%以內。 本發明中，對於拋光墊之形狀下工夫，使得前述 Preston式之三個要素的積在拋光對象物之全表面上都保持 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 509993 A7 _____Β7_ 五、發明說明（ψ ) 於既定範圍內。亦即，使用一種形狀滿足以下條件之拋光 墊： 在拋光時間內拋光墊與拋光對象物之間的相對線速度 之積分値、壓力之積分値、及接觸時間之積分値三者的積 ，係在拋光對象物面上所有的點，均佔由該三者的積在拋 光對象物面上所有的點之値當中的平均値之士 30%以內。 若採用這種拋光墊之形狀雖因拋光墊與拋光對象物間 大小的比、拋光墊之搖動範圍等而不同，但一般而言，藉 由削掉周速快的拋光墊外周部所得之形狀，而能實現，越 往拋光墊外周部，拋光對象物與拋光墊之接觸時間就越短 。·爲何要使前述三個積相對於平均値之分布範圍落在土 30%以內？其理由爲： 發明者們經實驗後發現，若控制在此範圍內，則在 CMP裝置實際使用時沒有問題之下都能對矽晶片進行均勻 的拋光。 本發明使拋光墊之形狀滿足上述條件，故不須進行複 雜的搖動，而以機械系統能追蹤的範圍內之搖動就足夠， 而能在拋光對象物之全面進行均勻的拋光。拋光墊外形的 形狀未必需要對稱性。 爲達成前述目的之第2發明，係前述第1發明，進一 步在拋光墊上，設有至少1處以上之中空部分。 中空部分最好設在旋轉周速慢的中心部。藉此，拋光 一定不會在旋轉周速慢的部分上進行，碰觸拋光墊之各部 分i：之拋光對象構件與拋光墊間之相對速度的分布因變小 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------裝--------訂--------- (請先閲讀背面之注意事項再填寫本頁) 509993 A7 ____B7____ 五、發明說明（< ) ，故容易滿足前述第1發明之條件。中空形狀之對稱性未 必需要。又，中空位置，係不一定要配置成對於拋光墊外 形形狀之中心成對稱，也未必要配置成對於轉盤之旋轉中 心成對稱。 爲達成前述目的之第3發明，係前述第2發明，其中 中空部分之面積佔拋光墊全體面積之80%以下。 前述第2發明中，若增加中空部分之面積太大，不僅 不會保持拋光之均勻性，拋光效率也變低。根據發明者之 實驗，若中空部分之面積超過80%，拋光之均勻性及拋光 效率均會急速惡化，故要限定在80%以下。 爲達成前述目的之第4發明，係前述第2發明或第3 發明，並且進一步設有一從中空部分供給硏漿之機構。 CMP裝置雖對拋光墊與拋光對象物之間供給硏漿(拋光 劑），但一旦從拋光墊外側供給，硏漿就因拋光對象物之旋 轉所伴隨之離心力而飛濺，有時候有不進入拋光墊與拋光 對象物之間的情形。本發明因從拋光墊之中空部分供給硏 漿，故拋光劑不會飛濺，而向拋光墊與拋光對象物之間供 給。 爲達成前述目的之第5發明，係前述第2發明〜第4 .發明中之任一發明，其中前述中空部分之形狀是圓以外的 形狀。 本發明即使在拋光墊之旋轉中心和中空部分一致的情 形，中空部分與其他部分之境界位置因隨著拋光墊之旋轉 而發生變化，故能防止拋光在境界部分變得不均勻。 7 -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 509993 A7 _________B7 _____ 五、發明說明（t ) 爲達成前述目的之第6發明，係前述第1發明，在拋 光墊中心設有圓形之中空部分，當半徑爲r時，在離前述 拋光墊中心既定距離之圓周上之有效拋光墊部之長度，扣 除前述拋光墊端部後將在0.5 7Γ r〜4 7Γ r之範圍內。 此處之端部，係距離角部(構成拋光墊之構件)5mm以 內之部分，或距離多角形(將構成拋光墊之緣部的線予以延 長而成者)之頂點5mm以內之部分。 本發明使拋光墊之形狀滿足上述條件，故不須進行複 雜的搖動，而以機械系統能追蹤的範圍內之搖動就足夠。 藉此，能在拋光對象物之全面進行均勻的拋光。拋光墊外 形的形狀未必需要對稱性。 相反地，若在離前述拋光墊之中心既定距離上有效的 拋光墊部的長度不在0.5 ;rr〜4/rr之範圍內，則必須進行 複雜的搖動，機械系統因而無法追蹤。又，前述端部避開 該條件的理由，係因端部有助於拋光的程度小，故忽視此 部分也沒有影響。 爲達成前述目的之第7發明，係前述第1發明〜第6 發明中之任一發明，拋光墊外形形狀之中心與貼有拋光墊 之轉盤的旋轉中心兩者不會一致。 若拋光墊外形形狀之中心與貼有拋光墊之轉盤的旋轉 中心兩者一致，拋光墊之外周側會經常在線速快的狀態下 旋轉，而中心部則經常在線速慢的狀態下旋轉。線速的差 値因而變大而不佳。又，前述第2發明中，若在中心部設 有中心部分，在搖動之端部不連續部分會出現在中心部分 8 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 509993 A7 ___B7__ 五、發明說明（1 ) 及非中心部分，因此拋光有時候會變得不均勻。 本發明因拋光墊外形形狀之中心與貼有拋光墊之轉盤 的旋轉中心兩者不一致，故拋光墊內之線速的差値變小， 而能使拋光對象物之拋光量更平均。又，因給與實質上複 雜的搖動，故即使在拋光墊中心部被挖空的情形，也能在 搖動之端部防止不連續部分出現在中空部分及非中心部分 Ο 爲達成前述目的之第8發明，係具有使用前述第1發 明〜第7發明中之任一種CMP裝置來拋光晶圓之工程。 本發明因能進行良好均勻性之晶圓拋光，故能以高良 率製造出具有細線寬之半導體元件。 【發明之實施例】 雖然以下將使用圖式來說明用於實施本發明之最佳實 施形態，但是本發明之範圍並不被所說明之實施形態所限 制。 圖1，係本發明實施形態CMP裝置之一個例子之立體 圖。圖2，係拋光墊傳送機構之立體圖。圖3，係拋光墊及 修整(conditioning)裝置之部分剖面圖。圖4，係拋光墊之剖 .面圖。 顯示於圖卜圖2、及圖3之轉位(index)型CMP裝置1 中，2是拋光頭，2a是粗拋光用拋光頭，2b是最後拋光加 工頭，3是旋轉軸，3a是馬達，3b是齒輪，3c是滑輪，3d 是齒輪，4是拋光墊，5是拋光墊修整機構，5a是修整圓 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） —1-------—-----訂--------1 (請先閱讀背面之注意事項再填寫本頁) 509993 A7 ____B7____ 五、發明說明（f ) (請先閱讀背面之注意事項再填寫本頁) 盤，5b是噴嘴，5c是保護罩，6是可旋轉之洗滌刷，7是 拋光墊之傳送機構，7a是導軌，7b是螺桿。7c係螺裝於螺 桿之移動體，用以保持拋光頭。 7d、7e是齒輪，7f是馬達，8是氣壓缸(拋光頭之升降 機構），9是晶圓W之收納匣盒，10是裝載輸送用機械手 臂，11是晶圓暫置台。12係轉位台(index table)，具有4組 可旋轉的晶圓夾頭機構12a、12b、12c、12d(以軸12e爲軸 芯等間隔設置）。轉位台12分成si之晶圓裝載區、s2之粗 拋光區、S3之晶圓最後拋光加工區、S4之晶圓卸載區。 13是卸載用輸送機械手臂，14a是夾頭修整器，14b是 夾頭洗滌機構，15是晶圓暫置台，16是帶式輸送帶(belt conveyor)，17是晶圓洗滌機構。 就圖4所示之拋光頭2而言，拋光頭2之基板21之突 出緣21a被加壓圓筒20之凸緣部分20a所支撐，拋光墊(環 狀拋光布)4則透過拋光布安裝板22而保持於基板21。在 加壓圓筒20內之加壓室20b內，張掛一隔膜(diaphi:agm)23 ，壓縮空氣經由主軸3內而被壓入加壓室20b內，藉由其 壓力，基板21被支撐成在3維(X，Y，Z)方向上搖動自如，而 拋光墊4則被保持成平行於晶圓表面。 在拋光頭2中央，設有拋光液供給管24或洗滌液供給 管24，供給管24之一端避開拋光墊4之中央中空部4a而 面臨環狀體裏面，拋光液經由環狀體對基板表面供給。又 ，也可對拋光墊4之中央中空部4a內供給拋光液。 拋光墊素材中，使用硬質發泡聚氨酯片、聚酯纖維不 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 509993 A7 ______B7__ 五、發明說明（1 ) 織布、毛氈、聚乙烯醇纖維不織布、尼龍纖維不織布、使 發泡性聚氨酯樹脂溶液散布在這些不織布上並加以發泡硬 化後而成者等。厚度爲1〜7mm。又’也可利用這些素材 之積層體。 拋光液，係使用漿料’該物質有⑷膠態氧化鋁、成型 二氧化矽、氧化鈽、二氧化鈦等固型硏磨粒佔重量百分率 0.01〜20%，（b)硝酸銅、枸櫞酸鐵，過氧化錳、二胺四乙酸 、三水合六氰合鐵、氟化氫酸、氟鈦酸、無定性硫酸 '氟 化氨、二氟化氫氛、過硫酸氨、過氧化氫等氧化劑佔重量 百分比1〜15%，（c)界面活性劑佔重量百分率0·3〜3%， (d)pH調整劑，（e)防腐劑，等(記載於日本專利之特開平6-313164號、特開平8-197414號、特表平8-510437號、特開 平10-67986號、特開平10-226784號等）。 適合於銅、銅-鈦、銅-鎢、鈦-鋁等金屬拋光之拋光劑 漿料由曰本之FUJIMI INCORPORATED公司、日本之 RODEL NITTA公司、美國之CABOT公司、美國之R0DEL 公司取得。 一使用前述CMP裝置來拋光在絕緣層上有金屬膜之晶 圓之工程，係由以下說明來進行。 1)把晶圓wl(圖中晶圓符號爲W，但說明中將第1晶 圓稱爲wl，將第2晶圓稱爲w2等），藉由輸送機械手臂10 之臂從匣盒9中取出，以金屬膜面朝上之方式裝載於暫置 台11上，在此處洗滌裏面，然後藉由輸送機械手臂傳送至 轉位台12之晶圓裝載區si，藉由夾頭機構12a予以吸附。 11 ;紙張尺度翻中關家標準（CNS)A4規格（21G X 297公楚) ' ----------1 --------訂--------* (請先閱讀背面之注意事項再填寫本頁) 509993 A7 ^_____B7____ 五、發明說明（P ) 2) 把轉位台12往順時鐘方向旋動90度，把晶圓wl引 導至第1拋光區s2，使主軸3下降，把安裝於粗拋光用拋 光頭2a之拋光墊4按壓於晶圓wl上，使主軸3及夾頭機 構之軸都旋轉，以進行晶圓之化學機械拋光。在這過程中 ，把另一晶圓w2裝載於暫置台上，並且傳送至晶圓裝載 區si，藉由夾頭機構12d予以吸附。 CMP加工中，藉由滾珠螺桿使拋光墊在自晶圓中心點 起在左右方向（X軸方向）上往復搖動。若假設拋光墊位於 晶圓中心點和外周之間之速度爲基準速度，則須使拋光墊 在晶圓中心點之搖動速度較慢，而在晶圓外周部之搖動速 度較快，以均勻地進行凹狀扭曲硏磨(dishing)。 在第1拋光區s2進行化學機械拋光既定時間之後，使 主軸3上升並向右後退，引導至拋光墊洗滌機構5上，在 此邊將高壓噴射水透過噴嘴5b噴在上面，邊用旋轉刷6除 去附著於拋光墊正面之硏磨粒、金屬硏磨屑，再把拋光墊 往左傳送至拋光區s2上等待。 3) 使轉位台12往順時鐘方向旋動90度，將拋光過的 晶圓wl引導至第2拋光區s3，使主軸3下降，將安裝於 最後拋光加工頭2b上之拋光墊4按壓在粗拋光過的晶圓 .wl上，使主軸3及夾頭機構之軸都旋轉，以進行晶圓之最 後化學機械拋光。最後拋光完成後，使主軸3上升並向右 後退，用洗滌機構5將安裝於最後拋光加工頭2b之拋光墊 予以洗滌，再往左傳送至第2拋光區S3上等待。 在這過程中，把另一晶圓w3裝載於暫置台上，再傳 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------------訂·-------- (請先閱讀背面之注意事項再填寫本頁) 509993 A7 _______B7_____ 五、發明說明（I I ) 送至晶圓裝載區sl，並利用夾頭機構i2c予以吸附住。又 ，在第1拋光區S2會對晶圓w2進行化學機械粗拋光。 4) 使轉位台12往順時鐘方向旋動90度，將拋光過的 晶圓wl引導至晶圓卸載區s4。然後，利用卸載輸送用機 械手臂13來將最後拋光過之晶圓往暫置台15輸送，在把 晶圓反面予以洗滌後，再藉由輸送用機械手臂13來引導至 使用帶式輸送帶之傳送機構，從噴嘴Π將洗滌液噴在拋光 過的晶圓圖案面上而得以洗滌，再將晶圓引導至下一工程 〇 在這過程中，把另一晶圓裝載於暫置台上，再傳 送至晶圓裝載區si，並利用夾頭機構12b予以吸附住。又 ，在第1拋光區s2會對晶圓w3進行化學機械粗拋光。 5) 使轉位台12往順時鐘方向旋轉90度，然後重覆操 作和前述2)〜4)相同的工程，來進行晶圓之化學機械拋光 〇 上述例子中，雖然爲了縮短生產時間而將化學機械拋 光加工分成第1粗拋光及第2最後拋光加工，但是也可以 一次就完成CMP加工，也可以分成粗拋光、中等拋光加工 、最後拋光加工三階段來進一步縮短生產時間。當採用三 .階段式CMP加工工程時，把si兼作晶圓裝載及晶圓卸載 使用，把s2當作第1拋光區，把S3當作第2拋光區，把 s4當作第3拋光區。 又，拋光墊素材上也可改變第1拋光墊及第2拋光墊 之素材。 13 本紙張尺度翻巾酬家標準（CNS)A4規格（21G X 297公釐) " -----------•裝--------訂-------- (請先閱讀背面之注意事項再填寫本頁) 509993 A7 ______B7 _ 五、發明說明（/l) 本發明之CMP裝置當然也能用於除去在基板之金屬圖 案上所形成之絕緣層膜，以及除去STI之P-TEOS膜層。 (實施例） 在本發明實施例當中以下就最佳實施例加以說明。 (實施例1) 使用以上所說明之CMP裝置，對成膜有l/zm熱氧化 膜之8吋晶圓在以下條件之下予以拋光。雖使用前述CMP 裝置來進行2階段式拋光，但因是實驗的關係，僅進行第 2拋光區S3之拋光，並未進行第1拋光區S2之拋光。拋光 條件則是按照以下而設定。 拋光墊轉速：400rpm 晶圓轉速：-200rpm(旋轉方向和拋光墊相反） 荷重：200gf/cm2 拋光時間：120秒 漿料：把CABOT公司SS25以2倍稀釋，75ml/min 搖動開始位置：拋光墊中心距離晶圓中心25mm 搖動寬度：從開始位置起到晶圓外周之距離爲40.0mm 搖動速度：速度可分10個階段變化，1個階段之寬度 爲 4.0mm 實施例中使用如圖5(a)所示之頂端呈圓形之三角形拋 光墊(又，以下所示拋光墊之尺寸單位爲mm)。這是爲了按 照’不須依靠搖動速度即可縮短晶圓外周之拋光墊與晶圓 之接觸時間而把拋光墊外周削去一部分之技術思想。如圖 所示’在這種拋光墊之中心上設有直徑50mm之圓形中空 14 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公釐） -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 509993 B7 五、發明說明（丨、） 部。 比較例中如圖5(b)所示使用直徑150mm之圓形拋光墊 ，在其中心設有直徑50mm之圓形中空部。 使用這些拋光墊，並且由計算求得在搖動各位置之滿 足一定條件之搖動速度；所謂一定條件，係把搖動幅度分 成10等分，在各搖動幅度內，在晶圓面內各點，在拋光時 間內拋光墊與拋光對象物之間的相對線速度之積分値、壓 力之積分値、及接觸時間之積分値三者的積均佔由該三者 的積在拋光對象物面上所有的點之値當中的平均値之土 30%以內。使用如圖5(a)所示之拋光墊後之結果係顯示於圖 6。如圖6所示，實線爲計算出來之指示速度，圓記號爲實 際上之速度。根據此實驗結果得知，實際上所得之搖動速 度跟隨著指令値，而得到了所需之拋光狀態。 圖7顯示由前述拋光所得之拋光量(A，1 A=l(T1()m)。 根據圖7得知，在任何之測定位置均獲得大約一定之拋光 量。拋光均勻性（σ)爲12.3%。 使用如圖5(b)所示之拋光墊，並且由計算求得在搖動 各位置之滿足一定條件之搖動速度；所謂一定條件，係把 搖動幅度分成10等分，在各搖動幅度內，在晶圓面內各點 .，在拋光時間內拋光墊與拋光對象物之間的相對線速度之 積分値、壓力之積分値、及接觸時間之積分値三者的積均 佔由該三者的積在拋光對象物面上所有的點之値當中的平 均値之土30%以內。使用如圖5(b)所示之拋光墊後之結果係 顯示於圖8。 15 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------裝--------訂.-------- (請先閱讀背面之注意事項再填寫本頁) 509993 A7 ____B7 ___ 五、發明說明（ι|) 比較圖6及圖8後得知，圖8的情形中搖動速度之變 化變大了。又，圓記號所標示之實測値並未跟隨指令値。 亦即，在圖8的拋光並未滿足以下條件：在晶圓面內各點 ，在拋光時間內拋光墊與拋光對象物之間的相對線速度之 積分値、壓力之積分値、及接觸時間之積分値三者的積均 佔由該三者的積在拋光對象物面上所有的點之値當中的平 均値之±30%以內。 亦即，具有如圖5(b)所示形狀之拋光墊並未滿足以下 條件：在晶圓面內各點，在拋光時間內拋光墊與拋光對象 物之間的相對線速度之積分値、壓力之積分値、及接觸時 間之積分値三者的積均佔由該三者的積在拋光對象物面上 所有的點之値當中的平均値之±30%以內。 圖9，係顯示使用如圖5(b)所示之拋光墊，並且以如 圖8所示之搖動模式來進行拋光後之結果。比較圖7與圖 9之拋光量(A)後得知，作爲比較例之圖9中，拋光量之分 布區域變大了。這是因在晶圓外周部搖動之可變速並未有 效地發生作用，故在晶圓邊緣之拋光速度大所致。拋光均 勻性（σ )爲17.3%。 (實施例2) 由圖7得知，在距離晶圓中心50mm附近有拋光不均 勻之現象。這是由於圖5(a)拋光墊之直徑爲50mm之中空 部所影響。亦即，在距離拋光墊中心25mm之位置上存在 孔之邊緣，由於此部分而產生不連續的部分，故受其影響 而產生不均勻部。爲防止此現象發生，故做出如圖10所示 16 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------------訂·-------1 (請先閱讀背面之注意事項再填寫本頁) 509993 A7 ____B7___ 五、發明說明（β) 在中心部之中空部爲正六角形之拋光墊或做出具有和圖 5(a)相同形狀之拋光墊’並且以和圖6相同的搖動條件來進 行拋光。拋光條件則和實施例1相同。 其結果顯示於圖11。由圖11得知’圖7中所見之在 距離晶圓中心50mm附近發生之拋光不均勻部分消失了。 拋光均勻性（σ )變爲6.3%。這是因把中心部之中空部做成 正六角形，而使中空部與非中空部分之交接處之離旋轉中 心之距離隨著拋光墊之旋轉而改變，使得交接處的部分變 得平滑之結果。因此，只要把該中空部之形狀做成圓以外 之形狀，則均可獲得同樣的效果。根據同樣的想法’若使 中心部之中心偏離拋光墊之旋轉中心，也能獲得相同的效 果。 (實施例3) 圖12係本發明第3實施例之拋光墊俯視圖。該拋光墊 具有和如圖5所示者相同之構造，在各頂角被做成圓弧之 正三角形之中心部有一圓形中空部。假設該圓形中空部之 半徑爲r。此時，將離開該拋光墊中心0 rl距離之場所(在 半徑rl之圓周上影響拋光之長度)設定成滿足〇·5ττι:〜47rr 之條件。 在圖12之場合，當半徑rl之圓內接於正三角形時， 在其圓周上影響拋光之長度爲最大。因此，內接圓之半徑 只要設定在中空部分半徑之2倍以內即可。 在半徑比內接圓半徑爲大之部分上，半徑越大，不落 在拋光墊上之長度就越大，因而影響拋光之長度變短。正 17 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------------訂--------1 (請先閱讀背面之>i意事項再填寫本頁) 509993 A7 ______ 五、發明說明（fL) 三角形之頂點A、B、C是把構成拋光墊緣部(三角形之邊) 之線予以延長而成。當把半徑放大到不在離頂點A、B、C 5mm以內之處時，只要把其範圍設定成影響拋光之長度在 0.5 7Γ r以上即可。 (實施例4) 圖13係顯示半導體元件之製程流程圖。啓動半導體元 件之製程，在步驟S200，先從後面所舉出的步驟S201〜 S204中選擇適當的處理工程。然後按照選擇進行S201〜 S204中之一步驟。 步驟S201係使矽晶圓表面氧化之氧化工程。步驟 S202係CVD工程，利用CVD等在矽晶圓表面上形成絕緣 膜。步驟S203係電極形成工程’利用蒸鍍等工程在砂晶圓 上形成電極。步驟S2Q4係離子植入工程，將離子植入矽晶 圓。 在CVD工程或電極形成工程之後，進行步驟S205。 步驟S205爲CMP工程。在CMP工程，利用本發明之CMP 裝置來進行由層間絕緣膜之平坦化、半導體元件表面金屬 膜之拋光所造成之金屬鑲嵌(damascene)形成等。 在CMP工程或氧化工程之後，進行步驟S206。步驟 .S206爲微影成像工程。在微影成像工程進行以下步驟：把 抗蝕劑(resist)塗佈在矽晶圓上、利用曝光裝置之曝光來把 迴路圖案印在矽晶圓上、及進行曝光後矽晶圓之顯影。在 步驟S207，係蝕刻工程，其利用蝕刻削去完成顯影之抗蝕 劑以外之部分，然後進行抗蝕劑之剝離，蝕刻結束後將除 18 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 509993 A7 ___B7_ 五、發明說明（1) 去不要的抗蝕劑。 在步驟S208，判斷所有需要的工程是否完成，若仍未 完成，則回到步驟S200，反覆前述步驟，而在矽晶圓上形 成迴路圖案。若在步驟S208判斷爲全部工程都完成了，則 結束。 本發明之半導體元件製造方法中，因在CMP工程中使 用本發明之CMP裝置，故在CMP工程之拋光均勻性會提 高。因此，和習知半導體元件製造方法相比，本發明之半 導體元件製造方法能以低成本製造具有較細微圖案之半導 體元件。 又，在上述半導體元件製程以外之半導體元件製程之 CMP工程上，也可使用本發明之CMP裝置。 【產業上之利用可能性】 如上述說明得知，本發明之CMP裝置可使用於例如半 導體元件製程中，用來拋光晶圓表面。又，本發明之半導 體元件製造方法也可使用於製造高圖案密度之半導體元件 .【圖式之簡單說明】 圖1，係本發明實施例CMP裝置一個例子之立體圖。 圖2，係拋光墊傳送機構之立體圖。 圖3，係拋光墊及修整裝置之部分剖面圖。 圖4，係拋光墊之剖面圖。 19 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） " "~ --------------------^--------« (請先閱讀背面之注意事項再填寫本頁) 509993 A7 _ B7_ 五、發明說明（（P) 圖5，係實施例及比較例中之拋光墊之一個例子。 圖6，係顯示本發明實施例中之搖動速度。 (請先閱讀背面之注意事項再填寫本頁) 圖7，係本發明第1實施例中晶圓之拋光結果。 圖8，係顯示比較例中之搖動速度。 圖9，係比較例中晶圓之拋光結果。 圖10，係本發明第2實施例中之拋光墊。 圖11，係本發明第2實施例中晶圓之拋光結果。 圖12，係本發明第3實施例中之拋光墊。 圖13，係半導體元件之製程。 【符號說明】 1 轉位型CMP裝置 2 拋光頭 2a 粗拋光用拋光頭 2b 最後拋光加工頭 3 旋轉軸 3a 馬達 3b 齒輪 3c 滑輪 3d 齒輪 4 拋光墊 5 拋光墊修整機構 5a 修整圓盤 5b 噴嘴 20 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 509993 A7 _ B7 五、發明說明（1，） 5c 保護罩 6 洗滌刷 7 拋光墊之傳送機構 7a 導軌 7b 螺桿 7c 移動體 7d、7e 齒輪 7f 馬達 8 氣壓缸(拋光頭之升降機構) 9 晶圓W之收納匣盒 10 裝載輸送用機械手臂 11 晶圓暫置台 12 轉位台 12a 、 12b 、 12c、12d晶圓夾頭機構 12e 軸 13 卸載用輸送機械手臂 14a 夾頭修整器 14b 夾頭洗滌機構 15 晶圓暫置台 16 帶式輸送帶 17 晶圓洗滌機構。 20 加壓圓筒 20a 凸緣部分 20b 加壓室 21 -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 509993 A7 _ B7 五、發明說明（y0) 21 基板 21a 突出緣 22 拋光布安裝板 23 隔膜 24 拋光液供給管 si 晶圓裝載區 s2 粗拋光區 s3 晶圓最後抛光加工區 s4 晶圓卸載區 W 晶圓 -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）509993 A7 ____B7___ 5. Description of the invention (I) [Detailed description of the invention] [Technical field to which the invention belongs] The present invention is a CMP device (chemical mechanical polishing device), which supplies polishing between a polishing pad and a polishing object Agent (slurry), while the polishing pad and the polishing object relative movement, to simultaneously perform chemical polishing and mechanical polishing. [Knowledge technology] Known CMP devices (Japanese Patent Application No. 6-21028, Japanese Patent Application No. 7-266219, Japanese Patent Application No. 8-192353, Japanese Patent Application No. 8-293477, Japanese Patent Application No. 10-173715, Japanese Patent Application No. 6 No. 11-156711, British Patent Publication No. 2331948, etc.), a rotating disk attached with a polishing pad is supported by a spindle and rotated, and a polishing object is held and rotated on a chuck facing the rotating disk, While polishing agent is supplied to the polishing pad surface, the polishing object held on the chuck is crimped, the polishing pad and the polishing object are relatively rotated in the same direction or opposite directions, and the polishing object is polished while shaking the polishing pad. As the material of the polishing pad, there are rigid foamed polyurethane sheet, polyester fiber nonwoven fabric, woolen fabric, polyvinyl alcohol fiber nonwoven fabric, nylon fiber nonwoven fabric 'to spread the foamable polyurethane resin solution on these nonwoven fabrics. In the past, the shape of the polishing pad was circular, the same as the shape of the substrate to be polished, and the polishing pad with a thickness of 3 to 7 mm was affixed to a turntable such as an aluminum plate or a stainless steel plate. In the past, polishing pads with a shape larger than that of the object to be polished were used. However, the peripheral speed of the peripheral part and the peripheral speed of the center part are 3. This paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----------------- 丨 丨 Order --------- (Please read the precautions on the back before filling this page) 509993 A7 ______B7____ V. Description of the invention (Ό There is a large gap between the two, so it is difficult to perform average polishing, and because it is difficult to rotate a large-sized turntable at high speed, etc., so recently, small-caliber pads have been used, that is, the shape is better than polishing. The object is a small polishing pad. Generally, the formula for determining the polishing amount is as follows: Preston's formula: V 2 η · P · v · t Here, V is the polishing speed, η is a constant, and P is a polishing pad. The contact pressure with the polishing object, v is the relative line speed of the polishing pad and the polishing object, and t is the contact time between the polishing pad and the polishing object. For uniform polishing, the polishing speed determined by the V All points must be approximately equal. When using small-caliber pads In the case of the polishing method, because a part of the polishing object is polished at a certain instant, and in order to ensure high polishing speed and uniformity of polishing, the polishing condition is used to make the polishing pad overhang the polishing object to shake. However, if the polishing pad is made to protrude from the polishing object, the contact area between the polishing pad and the polishing object will change due to shaking, thereby changing the load per unit area. In addition, a pressure mechanism using a diaphragm (diaphragm) method is used. In the case of polishing, the inclination and load of the polishing pad will change due to the protruding object. Therefore, the product of the relative linear velocity integral 负荷 and load integral 在 during polishing time is accumulated at each point on the object surface. They are not equal. That is, uneven polishing will be performed. Therefore, in order to make the product of the two equal, the shaking speed is variable by the shaking position (adjusted by the contact time between the polishing object and the polishing pad) 4 This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) ------------ installed -------- ordered ------! 羲(Please read the notes on the back first (Write this page) 509993 A7 __B7__ 5. The method of the invention description (") also has a method to control the load to a certain level. [Problems to be solved by the invention] However, in the case where the shaking speed is variable by the shaking position, The problems of uniform polishing, variable speed conditions, and the determined command speed of the mechanical system cannot keep up. In addition, when the pressure is controlled to a constant unit load by the rocking position, there is a compressibility of the pressurized fluid, etc. This causes a problem of control delay. Therefore, it is difficult for a polishing device using a small-diameter pad to uniformly polish an object to be polished. [Disclosure of the invention] The present invention was made in view of the above problems, and its purpose is to provide a CMP device and a method for manufacturing a semiconductor device using the CMP device, so that it can be polished uniformly even in the case of using a small diameter Polish the object. The first invention for achieving the aforementioned object is a CMP apparatus (chemical mechanical polishing apparatus), which relatively presses a polishing pad smaller than the polishing target on the polishing target, so that the polishing target and the polishing pad are both The relative movements between the two methods are rotated, and the polishing pad is shaken to perform polishing; it is characterized in that the shape of the polishing pad meets the following conditions: the relative linear velocity between the polishing pad and the polishing object during the polishing time. The product of the integral of the pressure, the integral of the pressure, and the integral of the contact time, all of the points on the surface of the polishing object, are the average of all the points accumulated by the three on the surface of the polishing object. Within ± 30%. In the present invention, the shape of the polishing pad is worked so that the product of the aforementioned three elements of the Preston formula is maintained on the entire surface of the polishing object. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). ) ----------- Installation -------- Order --------- (Please read the notes on the back before filling this page) 509993 A7 _____ Β7_ V. Invention The description (ψ) is within the given range. That is, a polishing pad having a shape that satisfies the following conditions: the integral of the relative linear velocity between the polishing pad and the object to be polished during the polishing time, the integral of the pressure, and the integral of the contact time is the product of the three. All points on the surface of the polishing object account for less than 30% of the average person among all the points accumulated by the three on the surface of the polishing object. If the shape of such a polishing pad is different depending on the size ratio between the polishing pad and the object to be polished, the rocking range of the polishing pad, etc., in general, the shape obtained by cutting off the outer periphery of the polishing pad with a fast peripheral speed It can be realized that the closer to the outer periphery of the polishing pad, the shorter the contact time between the polishing object and the polishing pad. · Why should the distribution range of the above three products relative to the average radon fall within 30% of the soil? The reason is that the inventors found after experiments that if controlled within this range, the silicon wafer can be polished uniformly without any problems when the CMP device is actually used. The present invention enables the shape of the polishing pad to meet the above conditions, so that no complicated shaking is required, but shaking within a range that can be tracked by a mechanical system is sufficient, and uniform polishing can be performed on the entire polishing object. The shape of the polishing pad shape need not necessarily be symmetrical. A second invention for achieving the aforementioned object is the above-mentioned first invention. The polishing pad is further provided with at least one hollow portion. The hollow portion is preferably provided at the center where the rotation speed is slow. As a result, the polishing will not be performed on the part with a slow rotation speed, and the parts of the polishing pad that touch the polishing pad i: the relative speed distribution between the polishing object member and the polishing pad becomes smaller. (CNS) A4 specification (210 X 297 mm) ----------- install -------- order --------- (Please read the precautions on the back first (Fill in this page again) 509993 A7 ____B7____ 5. Description of the invention (<), so it is easy to meet the conditions of the aforementioned first invention. The symmetry of the hollow shape is not necessary. In addition, the hollow position does not necessarily need to be arranged symmetrically with respect to the center of the shape of the polishing pad, and it is not necessarily arranged symmetrically with respect to the center of rotation of the turntable. A third invention for achieving the aforementioned object is the aforementioned second invention, wherein the area of the hollow portion accounts for 80% or less of the entire area of the polishing pad. In the aforementioned second invention, if the area of the hollow portion is increased too much, not only the polishing uniformity is not maintained, but also the polishing efficiency is lowered. According to the inventor's experiments, if the area of the hollow portion exceeds 80%, the polishing uniformity and polishing efficiency will deteriorate rapidly, so it should be limited to 80% or less. A fourth invention for achieving the aforementioned object is the aforementioned second or third invention, and a mechanism for supplying the pulp from the hollow portion is further provided. Although the CMP device supplies the slurry (polishing agent) between the polishing pad and the object to be polished, once it is supplied from the outside of the polishing pad, the slurry will splash due to the centrifugal force accompanying the rotation of the polishing object, and sometimes it does not enter the polishing. Between the pad and the object to be polished. In the present invention, since the slurry is supplied from the hollow portion of the polishing pad, the polishing agent is not splashed and is supplied between the polishing pad and the object to be polished. The fifth invention for achieving the aforementioned object is any one of the aforementioned second to fourth inventions, wherein the shape of the hollow portion is a shape other than a circle. Even when the rotation center of the polishing pad is consistent with the hollow portion, the boundary position of the hollow portion and other portions changes with the rotation of the polishing pad, so that the polishing can be prevented from becoming uneven in the boundary portion. 7 ----------- Installation -------- Order --------- (Please read the precautions on the back before filling this page) This paper size applies to China Standard (CNS) A4 specification (210 X 297 mm) 509993 A7 _________B7 _____ V. Description of the invention (t) The sixth invention to achieve the aforementioned purpose is the aforementioned first invention, and a circular hollow portion is provided in the center of the polishing pad When the radius is r, the length of the effective polishing pad portion on the circumference at a predetermined distance from the center of the polishing pad, after deducting the end of the polishing pad, will be in the range of 0.5 7Γ r to 4 7Γ r. The end here is within 5 mm from the corner (the member constituting the polishing pad) or within 5 mm from the vertex of the polygon (by extending the line forming the edge of the polishing pad). According to the present invention, the shape of the polishing pad satisfies the above conditions, so that no complicated shaking is required, but shaking within a range that can be tracked by a mechanical system is sufficient. Thereby, uniform polishing can be performed on the entire surface of the polishing object. The shape of the polishing pad shape need not necessarily be symmetrical. Conversely, if the length of the polishing pad portion that is effective at a predetermined distance from the center of the aforementioned polishing pad is not in the range of 0.5; rr ~ 4 / rr, a complicated shaking must be performed, and the mechanical system cannot be tracked. The reason for avoiding this condition is that the end portion contributes little to polishing, so ignoring this portion has no effect. The seventh invention for achieving the aforementioned object is any one of the aforementioned first to sixth inventions, and the center of the external shape of the polishing pad and the center of rotation of the turntable to which the polishing pad is affixed do not coincide. If the center of the shape of the polishing pad and the rotation center of the turntable with the polishing pad coincide, the outer peripheral side of the polishing pad will often rotate at a fast line speed, and the center portion will often rotate at a slow line speed. The difference in line speed is therefore large and unfavorable. In the second invention described above, if a central portion is provided at the central portion, discontinuous portions will appear at the central portion at the end of the shaking. 8 This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm). ) ----------- Installation -------- Order --------- (Please read the notes on the back before filling this page) 509993 A7 ___B7__ V. Invention Note (1) and the non-central part, so polishing sometimes becomes uneven. In the present invention, since the center of the shape of the polishing pad and the rotation center of the turntable attached with the polishing pad are inconsistent, the difference in the line speed in the polishing pad becomes smaller, and the polishing amount of the polishing object can be more even. In addition, since substantially complicated shaking is given, even if the center portion of the polishing pad is hollowed out, discontinuous portions can be prevented from appearing in the hollow portion and the non-central portion at the end of the shaking. The eighth invention is a process for polishing a wafer using any one of the first to seventh inventions of the CMP apparatus. Since the present invention can perform wafer polishing with good uniformity, a semiconductor element having a fine line width can be manufactured with a high yield. [Embodiment of the Invention] Although the best mode for carrying out the present invention will be described below using drawings, the scope of the present invention is not limited by the described embodiment. Fig. 1 is a perspective view of an example of a CMP apparatus according to an embodiment of the present invention. Figure 2 is a perspective view of a polishing pad transfer mechanism. Fig. 3 is a partial cross-sectional view of a polishing pad and a conditioning device. Fig. 4 is a sectional view of a polishing pad. In the index type CMP device 1 shown in Figures 2 and 3, 2 is a polishing head, 2a is a polishing head for rough polishing, 2b is a final polishing processing head, 3 is a rotating shaft, and 3a is a motor 3b is a gear, 3c is a pulley, 3d is a gear, 4 is a polishing pad, 5 is a polishing pad dressing mechanism, and 5a is a dressing circle. 9 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) — 1 -------------- Order -------- 1 (Please read the notes on the back before filling out this page) 509993 A7 ____B7____ 5. Description of the Invention (f) (Please first Read the notes on the back and fill in this page again). 5b is the nozzle, 5c is the protective cover, 6 is the rotatable washing brush, 7 is the transfer mechanism of the polishing pad, 7a is the guide rail, and 7b is the screw. The 7c series is mounted on the moving body of the screw rod to hold the polishing head. 7d and 7e are gears, 7f is a motor, 8 is a pneumatic cylinder (lifting mechanism of the polishing head), 9 is a storage box for the wafer W, 10 is a robot arm for loading and conveying, and 11 is a wafer temporary table. The 12 series index table has 4 sets of rotatable wafer chuck mechanisms 12a, 12b, 12c, and 12d (equally spaced with the shaft 12e as the core). The index table 12 is divided into a wafer loading area of si, a rough polishing area of s2, a final polishing processing area of the wafer of S3, and a wafer unloading area of S4. 13 is a transfer robot for unloading, 14a is a chuck dresser, 14b is a chuck cleaning mechanism, 15 is a wafer temporary table, 16 is a belt conveyor, and 17 is a wafer cleaning mechanism. For the polishing head 2 shown in FIG. 4, the protruding edge 21 a of the substrate 21 of the polishing head 2 is supported by the flange portion 20 a of the pressure cylinder 20, and the polishing pad (annular polishing cloth) 4 is installed through the polishing cloth. The plate 22 is held on the substrate 21. A diaphragm (diaphi: agm) 23 is hung in the pressurizing chamber 20b in the pressurizing cylinder 20, and compressed air is pressed into the pressurizing chamber 20b through the main shaft 3, and the substrate 21 is supported by the pressure. Shake freely in the 3D (X, Y, Z) direction, while the polishing pad 4 is held parallel to the wafer surface. In the center of the polishing head 2, a polishing liquid supply pipe 24 or a washing liquid supply pipe 24 is provided. One end of the supply pipe 24 avoids the central hollow portion 4a of the polishing pad 4 and faces the inside of the ring body. The polishing liquid passes through the ring body to the substrate. Surface supply. It is also possible to supply a polishing liquid into the central hollow portion 4a of the polishing pad 4. In the polishing pad material, the rigid foamed polyurethane sheet and polyester fiber are not used. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 509993 A7 ______B7__ 5. Description of the invention (1) Woven cloth and felt , Non-woven fabrics of polyvinyl alcohol fibers, non-woven fabrics of nylon fibers, and those obtained by spreading a foamable polyurethane resin solution on these non-woven fabrics and subjecting them to foaming and hardening. The thickness is 1 ~ 7mm. It is also possible to use a laminated body of these materials. Polishing liquid, which uses slurry. The substance includes solid colloidal alumina, shaped silicon dioxide, hafnium oxide, titanium dioxide, and other solid honing particles, which account for 0.01% to 20% by weight. (B) Copper nitrate and iron citrate. , Manganese peroxide, diamine tetraacetic acid, ferric hexacyanotrihydrate, hydrofluoric acid, fluotitanic acid, amorphous sulfuric acid 'ammonia fluoride, hydrogen difluoride atmosphere, ammonia persulfate, hydrogen peroxide and other oxidants account for 1% by weight 15%, (c) surfactant percentage 0.3 ~ 3%, (d) pH adjuster, (e) preservative, etc. (documented in Japanese Patent Application Laid-Open No. 6-313164, Japanese Patent Laid-Open No. 6-313164 No. 197414, No. 8-510437, No. 10-67986, No. 10-226784, etc.). Polishing agents suitable for copper, copper-titanium, copper-tungsten, titanium-aluminum and other metal polishing pastes were obtained from Fujitsu Inc., Japan's Fujitsu Inc., RODEL NITTA from Japan, CABOT from the US, and RODEL from the US. A process for polishing a crystal circle having a metal film on an insulating layer using the aforementioned CMP apparatus is performed by the following description. 1) The wafer wl (wafer symbol is W in the figure, but in the description, the first wafer is referred to as wl, the second wafer is referred to as w2, etc.), and the cassette 9 is transferred from the cassette 9 by the arm of the transport robot 10 Take it out, load it on the temporary table 11 with the metal film facing up, wash it inside, and then transfer it to the wafer loading area si of the indexing table 12 by the conveying robot arm, and apply it through the chuck mechanism 12a. Adsorption. 11; Paper Standards (CNS) A4 Specification (21G X 297 Gongchu) '---------- 1 -------- Order -------- * (Please read the precautions on the back before filling this page) 509993 A7 ^ _____ B7____ V. Description of the invention (P) 2) Rotate the index table 12 90 degrees clockwise to guide the wafer wl to the first polishing In the area s2, the spindle 3 is lowered, and the polishing pad 4 mounted on the polishing head 2a for rough polishing is pressed on the wafer w1, so that both the spindle 3 and the chuck mechanism are rotated to perform chemical mechanical polishing of the wafer. In this process, another wafer w2 is loaded on the temporary table, and transferred to the wafer loading area si, and sucked by the chuck mechanism 12d. During CMP processing, the polishing pad is reciprocated in the left-right direction (X-axis direction) from the wafer center point by a ball screw. If it is assumed that the speed at which the polishing pad is located between the center point of the wafer and the periphery is the reference speed, the shaking speed of the polishing pad at the center point of the wafer should be slower, and the shaking speed at the outer periphery of the wafer should be faster to uniformly Concave twisted dishing is performed. After a predetermined time of chemical mechanical polishing in the first polishing zone s2, the main shaft 3 is raised and backed to the right, and guided to the polishing pad washing mechanism 5, where high-pressure spray water is sprayed on through the nozzle 5b, and a rotary brush is used 6 Remove the honing abrasive particles and metal honing debris adhering to the front of the polishing pad, and then transfer the polishing pad to the left to the polishing area s2 and wait. 3) Turn the index table 12 90 degrees clockwise to guide the polished wafer wl to the second polishing area s3, lower the spindle 3, and press the polishing pad 4 mounted on the final polishing head 2b On the rough polished wafer .wl, both the main shaft 3 and the chuck mechanism are rotated to perform the final chemical mechanical polishing of the wafer. After the final polishing is completed, the main shaft 3 is raised and backed to the right, and the polishing pad mounted on the final polishing head 2b is washed by the washing mechanism 5, and then transferred to the second polishing area S3 to the left to wait. In this process, another wafer w3 is loaded on the temporary table, and then 12 paper sizes are transmitted to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ----------- -------- Order · -------- (Please read the notes on the back before filling out this page) 509993 A7 _______B7_____ 5. Description of the invention (II) Send to the wafer loading area sl, and It is adsorbed by the chuck mechanism i2c. In addition, the wafer w2 is subjected to chemical mechanical rough polishing in the first polishing region S2. 4) Rotate the index table 12 90 degrees clockwise to guide the polished wafer w1 to the wafer unloading area s4. Then, the last polished wafer is transferred to the temporary table 15 by the unloading conveying robot arm 13, and after the reverse side of the wafer is washed, it is guided by the conveying robot arm 13 to the conveyance using the belt conveyor. The mechanism sprays the washing liquid on the polished wafer pattern surface from the nozzle Π to be washed, and then guides the wafer to the next process. In the process, another wafer is loaded on the temporary table and then transferred. It goes to the wafer loading area si and is sucked by the chuck mechanism 12b. In addition, the wafer w3 is subjected to chemical mechanical rough polishing in the first polishing region s2. 5) Rotate the index table 12 90 degrees clockwise, and then repeat the same process as 2) ~ 4) above to perform chemical mechanical polishing of the wafer. In the above example, although to shorten the production time, The chemical mechanical polishing process is divided into the first rough polishing and the second final polishing processing, but the CMP processing can also be completed at one time, and it can also be divided into three stages of rough polishing, medium polishing processing, and final polishing processing to further shorten the production time. When a three-stage CMP process is used, si is also used for wafer loading and wafer unloading, with s2 as the first polishing area, S3 as the second polishing area, and s4 as the third polishing area. In addition, the materials of the first polishing pad and the second polishing pad can be changed in the polishing pad material. 13 Standards for this paper (CNS) A4 (21G X 297 mm) " ----------- • Installation -------- Order ----- --- (Please read the precautions on the back before filling out this page) 509993 A7 ______B7 _ 5. Explanation of the invention (/ l) Of course, the CMP device of the present invention can also be used to remove the insulating layer formed on the metal pattern of the substrate Film, and P-TEOS film layer with STI removed. (Embodiment) Among the embodiments of the present invention, a preferred embodiment will be described below. (Example 1) Using the CMP apparatus described above, an 8-inch wafer formed with a 1 / zm thermal oxide film was polished under the following conditions. Although the aforementioned CMP apparatus was used for the two-stage polishing, due to the experimental relationship, only the polishing of the second polishing region S3 was performed, and the polishing of the first polishing region S2 was not performed. The polishing conditions were set as follows. Rotation speed of polishing pad: 400rpm Wafer rotation speed: -200rpm (Reverse rotation direction and polishing pad) Load: 200gf / cm2 Polishing time: 120 seconds Slurry: Dilute CABOT SS25 at 2 times, 75ml / min Shake start position: polishing pad The distance from the center to the center of the wafer is 25mm. Rocking width: The distance from the starting position to the wafer periphery is 40.0mm. Rocking speed: The speed can be changed in 10 stages, and the width in one stage is 4.0mm. The example is shown in Figure 5 (a ) Shows a triangular polishing pad with a round top end (also, the dimensions of the polishing pad shown below are in mm). This is to reduce the contact time between the polishing pad on the periphery of the wafer and the wafer without relying on the shaking speed, and to remove a part of the periphery of the polishing pad. As shown in the figure, there is a circular hollow 14 with a diameter of 50mm on the center of this polishing pad. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (21 × 297 mm) -------- --- Installation -------- Order --------- (Please read the precautions on the back before filling this page) 509993 B7 V. Description of the Invention (丨,) Department. In the comparative example, as shown in FIG. 5 (b), a circular polishing pad having a diameter of 150 mm was used, and a circular hollow portion having a diameter of 50 mm was provided at the center. Use these polishing pads, and calculate the shaking speed that satisfies certain conditions at each position of the shaking; the so-called certain conditions are divided into 10 equal divisions within each shaking range, at each point in the wafer surface, within The integral of the relative linear velocity between the polishing pad and the polishing object within the polishing time, the integral of the pressure, and the integral of the contact time. The product of the three accounts for all the product of the three on the surface of the polishing object. Within 30% of the average 値 soil among the points. The results after using the polishing pad shown in Fig. 5 (a) are shown in Fig. 6. As shown in Figure 6, the solid line is the calculated indicated speed, and the circle mark is the actual speed. According to the results of this experiment, it is known that the obtained shaking speed actually follows the command 値, and the desired polishing state is obtained. FIG. 7 shows the polishing amount (A, 1 A = 1 (T1 () m)) obtained from the aforementioned polishing. According to FIG. 7, it is known that a certain polishing amount is obtained at any measurement position. The polishing uniformity (σ) is 12.3%. Use the polishing pad as shown in Figure 5 (b), and calculate the shaking speed that satisfies certain conditions at each shaking position by calculation; the so-called certain condition is to divide the shaking amplitude into 10 equal parts, at each shaking amplitude In each point of the wafer surface, the integral of the relative linear velocity between the polishing pad and the object to be polished during the polishing time, the integral of the pressure, and the integral of the contact time. The average of the soil of all three points accumulated on the surface of the object to be polished is within 30% of the average soil. The results after using the polishing pad shown in Figure 5 (b) are shown in Figure 8. 15 Paper Size Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) ----------- Installation -------- Order .-------- (Please read first Note on the back, please fill in this page again) 509993 A7 ____B7 ___ V. Description of the invention (ι |) After comparing Fig. 6 and Fig. 8, we know that the variation of the shaking speed in the situation of Fig. 8 changes. In addition, the actual measurement indicated by the circle mark does not follow the instruction. That is, the polishing in FIG. 8 does not meet the following conditions: at each point in the wafer surface, the polishing pad and the polishing object are within the polishing time. The integral of the relative linear velocity, the integral of the pressure, and the integral of the contact time. The product of the three accounts for the average of ± 30 of the total of all the points accumulated by the three on the object surface. That is, a polishing pad having a shape as shown in FIG. 5 (b) does not satisfy the following conditions: at each point in the wafer surface, the relative linear velocity between the polishing pad and the object to be polished during the polishing time The product of the integral 値, the integral of the pressure 値, and the integral of the contact time 均 accounts for within ± 30% of the average 値 among all the points accumulated by the three on the surface of the object to be polished. Figure 9, It shows the results after polishing using the polishing pad shown in Fig. 5 (b) and the shaking mode shown in Fig. 8. Comparing the polishing amount (A) of Fig. 7 and Fig. 9 is obtained as a comparison. In Figure 9 of the example, the distribution area of the polishing amount becomes larger. This is because it is on the outer periphery of the wafer. The variable speed of shaking does not work effectively, so the polishing speed at the edge of the wafer is large. The polishing uniformity (σ) is 17.3%. (Example 2) It is known from FIG. 7 that the distance from the center of the wafer is 50 mm There is a phenomenon of uneven polishing nearby. This is affected by the hollow part of the polishing pad having a diameter of 50mm in Fig. 5 (a). That is, the edge of the hole exists at a position 25mm away from the center of the polishing pad. The discontinuous part is affected by it to produce an uneven part. In order to prevent this phenomenon, as shown in Figure 10, 16 paper sizes are made according to the Chinese National Standard (CNS) A4 (210 X 297 mm)- ------------------ Order · ------- 1 (Please read the notes on the back before filling out this page) 509993 A7 ____B7___ V. Description of the invention (β ) A polishing pad having a regular hexagon in the hollow portion of the central portion or a polishing pad having the same shape as that of FIG. 5 (a) and polished under the same shaking conditions as in FIG. 6. The polishing conditions were the same as in Example 1. The results are shown in Fig. 11. It is understood from FIG. 11 that the unevenness in polishing occurring in the vicinity of 50 mm from the center of the wafer as seen in FIG. 7 disappeared. The polishing uniformity (σ) becomes 6.3%. This is because the hollow part of the central part is made into a regular hexagon, so that the distance from the center of the intersection between the hollow part and the non-hollow part changes with the rotation of the polishing pad, so that the part at the junction becomes smooth. . Therefore, as long as the shape of the hollow portion is made into a shape other than a circle, the same effect can be obtained. According to the same idea, if the center of the center portion is deviated from the center of rotation of the polishing pad, the same effect can be obtained. (Embodiment 3) FIG. 12 is a plan view of a polishing pad according to a third embodiment of the present invention. This polishing pad has the same structure as that shown in Fig. 5, and a circular hollow portion is formed at the center of an equilateral triangle whose top corners are made into arcs. Assume that the radius of the circular hollow portion is r. At this time, a place at a distance of 0 rl from the center of the polishing pad (the length that affects the polishing on the circumference of the radius rl) is set to satisfy the condition of 0.55ττι: ~ 47rr. In the case of FIG. 12, when a circle with a radius rl is inscribed in a regular triangle, the length that affects polishing on its circumference is the largest. Therefore, the radius of the inscribed circle need only be set within 2 times the radius of the hollow portion. On the part where the radius is larger than the radius of the inscribed circle, the larger the radius, the greater the length that does not fall on the polishing pad, and the shorter the length that affects polishing. 17 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ------------------- Order -------- 1 (Please read > i on the back before filling in this page) 509993 A7 ______ V. Description of the Invention (fL) The vertices A, B, and C of the triangle extend the line that constitutes the edge of the polishing pad (edge of the triangle). Made. When the radius is enlarged to be within 5 mm from the apex A, B, and C, it is only necessary to set the range to a length that affects polishing above 0.5 7Γ r. (Embodiment 4) FIG. 13 is a flowchart showing a manufacturing process of a semiconductor device. Start the semiconductor device manufacturing process. In step S200, first select the appropriate processing process from the steps S201 to S204 listed later. Then perform one of steps S201 to S204 according to the selection. Step S201 is an oxidation process for oxidizing the surface of the silicon wafer. Step S202 is a CVD process, and an insulating film is formed on the surface of the silicon wafer by using CVD or the like. Step S203 is an electrode formation process. The electrode is formed on the sand wafer by a process such as vapor deposition. Step S2Q4 is an ion implantation process, implanting ions into a silicon wafer. After the CVD process or the electrode formation process, step S205 is performed. Step S205 is a CMP project. In the CMP process, the CMP device of the present invention is used to perform damascene formation by planarizing an interlayer insulating film, polishing a metal film on the surface of a semiconductor element, and the like. After the CMP process or the oxidation process, step S206 is performed. Step .S206 is a lithography imaging project. In the lithography imaging process, the following steps are performed: a resist is coated on a silicon wafer, a circuit pattern is printed on the silicon wafer by exposure of an exposure device, and the silicon wafer is developed after exposure. In step S207, it is an etching process, which uses etching to remove the part other than the resist that has been developed, and then strips the resist. After the etching is completed, the paper size of 18 papers will be subject to the Chinese National Standard (CNS) A4 specification 210 X 297 mm) ----------- Install -------- Order --------- (Please read the precautions on the back before filling this page) 509993 A7 ___B7_ 5. Description of the invention (1) Remove unnecessary resist. In step S208, it is judged whether all required projects are completed. If it is still not completed, it returns to step S200, repeats the foregoing steps, and forms a loop pattern on the silicon wafer. If it is determined in step S208 that all the projects are completed, the process ends. In the semiconductor device manufacturing method of the present invention, since the CMP device of the present invention is used in the CMP process, the polishing uniformity in the CMP process is improved. Therefore, the semiconductor device manufacturing method of the present invention can manufacture a semiconductor device having a finer pattern at a lower cost than the conventional semiconductor device manufacturing method. In addition, the CMP device of the present invention may be used in a CMP process of a semiconductor element process other than the above-mentioned semiconductor element process. [Industrial Applicability] As can be seen from the above description, the CMP device of the present invention can be used, for example, in semiconductor device manufacturing processes to polish the surface of a wafer. In addition, the semiconductor device manufacturing method of the present invention can also be used to manufacture a semiconductor device with a high pattern density. [Simplified description of the drawing] FIG. 1 is a perspective view of an example of a CMP device according to an embodiment of the present invention. Figure 2 is a perspective view of a polishing pad transfer mechanism. Fig. 3 is a partial sectional view of a polishing pad and a dressing device. FIG. 4 is a sectional view of a polishing pad. 19 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) " " ~ -------------------- ^ ---- ---- «(Please read the notes on the back before filling out this page) 509993 A7 _ B7_ V. Description of the invention ((P) Figure 5, is an example of polishing pads in the examples and comparative examples. Figure 6, Shows the shaking speed in the embodiment of the present invention. (Please read the precautions on the back before filling this page.) Figure 7 shows the polishing results of the wafer in the first embodiment of the present invention. Figure 8 shows the comparison in the comparative example. Shaking speed. Figure 9 shows the polishing results of the wafer in the comparative example. Figure 10 shows the polishing pads in the second embodiment of the present invention. Figure 11 shows the polishing results of the wafer in the second embodiment of the present invention. Figure 12 Fig. 13 shows the polishing pad in the third embodiment of the present invention. Fig. 13 shows the manufacturing process of the semiconductor device. [Symbols] 1 Indexing CMP device 2 Polishing head 2a Rough polishing head 2b Final polishing processing head 3 Rotary shaft 3a Motor 3b gear 3c pulley 3d gear 4 polishing pad 5 polishing pad dressing mechanism 5a dressing disc 5b nozzle 20 paper size China National Standard (CNS) A4 specification (210 X 297 mm) 509993 A7 _ B7 V. Description of the invention (1,) 5c Protective cover 6 Washing brush 7 Polishing pad transmission mechanism 7a Guide rail 7b Screw 7c Moving body 7d, 7e Gear 7f Motor 8 Pneumatic cylinder (lifting mechanism of polishing head) 9 Storage box for wafer W 10 Robot arm for loading and conveying 11 Wafer temporary table 12 Indexing table 12a, 12b, 12c, 12d Wafer chuck mechanism 12e Shaft 13 Unloading conveying robot arm 14a Chuck trimmer 14b Chuck washing mechanism 15 Wafer temporary table 16 Belt conveyor 17 Wafer washing mechanism 20 Pressurizing cylinder 20a Flange part 20b Pressurizing chamber 21 ----- ------ Installation -------- Order --------- (Please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 509993 A7 _ B7 V. Description of the invention (y0) 21 Substrate 21a Protruding edge 22 Polishing cloth mounting plate 23 Diaphragm 24 Polishing liquid supply tube si Wafer loading area s2 Rough polishing area s3 Final polishing of the wafer Area s4 Wafer unloading area W Wafer ----------- Load --- ----- Order --------- (Please read the notes on the back before filling out this page) This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)