CN106463383A - Method, system and polishing pad for chemical mechancal polishing - Google Patents
Method, system and polishing pad for chemical mechancal polishing Download PDFInfo
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- CN106463383A CN106463383A CN201580030724.3A CN201580030724A CN106463383A CN 106463383 A CN106463383 A CN 106463383A CN 201580030724 A CN201580030724 A CN 201580030724A CN 106463383 A CN106463383 A CN 106463383A
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- substrate
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- pad
- support member
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- 239000000126 substance Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 224
- 230000033001 locomotion Effects 0.000 claims abstract description 51
- 238000000227 grinding Methods 0.000 claims description 385
- 230000004888 barrier function Effects 0.000 claims description 14
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 14
- 238000010276 construction Methods 0.000 claims description 12
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Chemical mechanical polishing can be used for "touch-up polishing" in which polishing is performed on a limited area of the front surface of the substrate. The contact area between the polishing pad and the substrate can be substantially smaller than the radius surface of the substrate. During polishing, the polishing pad can undergo an orbital motion. The polishing pad can be maintained in a fixed angular orientation during the orbital motion. The contact area can be arc-shaped. The contact area can be provided by one or more lower portions projecting downward from an upper portion of the polishing pad. A perimeter portion of the polishing pad can be vertically fixed to an annular member and a remainder of the polishing pad within the perimeter portion can be vertically free.
Description
Technical field
It relates to a kind of cmp (chemical mechanical polishing；CMP) frame of system
Structure.
Background technology
Generally to be formed integrated circuit on substrate by successive sedimentation conduction on silicon, semiconductive or insulating barrier.
One manufacturing step relates to side's deposit filler layer and planarize this packing layer on a non-planar surface.For some application, smooth
Change packing layer until the top surface of exposure pattern layer.For example, conductive filler layer can be deposited on patterned insulation layer to fill
Groove in insulating barrier or hole.After planarization, between the raised design of insulating barrier, the part of remaining metal level forms logical
Hole, connector and wiring, such through hole, connector and wiring provide the conductive path between the barrier film circuit on substrate.For all
Other application ground such as oxide, planarization packing layer is until leaving predetermined thickness on a non-planar surface.In addition, photoetching is led to
Often need the planarization of substrate surface.
Cmp (CMP) is a kind of generally acknowledged flattening method.This flattening method typically requires at carrier head
Or installation base plate on grinding head.Generally rotate against grinding pad and put the exposed surface of substrate.Carrier head provides on substrate can
Control load is to promote this carrier head against grinding pad.The generally surface by abrasion slurry supply to grinding pad.
Content of the invention
The present invention is provided to system and the equipment of the grinding (for example, " finishing is ground ") of substrate, wherein before substrate
Grinding is performed on the confined area on surface.
In an aspect, chemical machinery polishing system includes substrate support, moveable pad support and driving
System.Substrate support holds substrate during being configured to grinding operation on substantially fixed angular orientation.Movably
Pad support is configured to hold grinding pad, and this grinding pad has the diameter of the no more than radius of substrate.Drive system is through joining
Put to move pad support and grinding pad with track motion while grinding pad is with the upper surface of substrate.Track moves
There is the orbit radius of the no more than diameter of grinding pad and grinding pad is maintained relative on the fixing angular orientation of substrate.
Embodiment can include the one in following characteristics or more person.Grinding pad can have the contact zone of contact substrate
Territory.The diameter of contact area can between the diameter of substrate about between 1% and 10%.Orbit radius can straight between contact area
About between 5% and 50% of footpath.Drive system can include the recess in lining pad support head, the rotatable cam extending in recess
And it is connected to the motor of cam.The support member that lining pad support head can be coupled to fix by connecting rod is to prevent liner from propping up the rotation of fastener.
Locating driver system can across substrate transverse shifting lining pad support head.Locating driver system can include two linear actuators, such
Linear actuators is configured to move lining pad support head in two perpendicular direction.
In another aspect, chemical machinery polishing system includes substrate support, grinding pad, moveable pad support
And drive system.Substrate support holds substrate during being configured to grinding operation on substantially fixed angular orientation.Grind
Mill pad has the contact area of contact substrate, and this contact area has the diameter of the no more than radius of substrate.Removable liner props up
Support member is configured to hold grinding pad.Drive system is configured to the contact area of grinding pad and the upper surface of substrate
Simultaneously with the mobile pad support of track motion and grinding pad.Track motion has the orbit radius of the no more than diameter of grinding pad
And maintain grinding pad relative on the fixing angular orientation of substrate.
Embodiment can include the one in following characteristics or more person.Grinding pad can include the jut from layer, and prominent
The basal surface in the portion of rising can provide contact area.At least one of pressure-sensitive cement or holder can hold in pad support and grind
Mill pad.Contact area can be dish type or arc.
In another aspect, the method for cmp includes：Grinding pad is made to contact in contact area with substrate, should
Contact area has the diameter of the no more than radius of substrate；And contact area and the upper surface of substrate same at grinding pad
When produce the relative motion between grinding pad and substrate.Relative motion includes that track moves, and the motion of this track has no more than grinds
The orbit radius of the diameter of mill pad.During track moves, it is fixed relative to the substantially fixed angle of substrate that grinding pad maintains
Upwards.
Embodiment can include the one in following characteristics or more person.During track moves, can be fixing horizontal
Position holds substrate.During track moves, can be with the speed of about the 5% of the instantaneous velocity of no more than track motion across base
Plate laterally scans grinding pad.
In another aspect, chemical machinery polishing system includes：Substrate support, solid during being configured to grinding operation
Hold substrate；Grinding pad support member；Grinding pad, is held by pad support；And drive system, it is configured to produce substrate support
And the relative motion between grinding pad support member.Grinding pad has and is fastened to the top of grinding pad support member and convex downwards from top
The bottom going out.The upper surface on top adjoins grinding pad support member.The basal surface of bottom provides the top contacting substrate during grinding
The contact surface on surface.Contact surface is less than the top surface of substrate.Top has the first lateral dimension and bottom has the second horizontal stroke
To size, this second lateral dimension is less than this first lateral dimension.
Embodiment can include the one in following characteristics or more person.Grinding pad support member can include plate, and this plate has
Cross over the surface of grinding pad, and the substantially all of upper surface on the top of grinding pad can the surface of adjoining plate.Binder can be
Grinding pad is held in pad support.Grinding pad support member can include annular construction member, the periphery of the upper surface on the top of grinding pad
The remainder that part can adjoin the upper surface in annular construction member, and peripheral part can not contact grinding pad support member.One or
More holders can hold the peripheral zone of grinding pad in pad support.The top of grinding pad can include bending section,
This flexure section has bigger flexibility than the section of the grinding pad above contact surface.The top of grinding pad can include poly-to benzene
Dioctyl phthalate second diester sheet material.
The multiple grooves for slurry conveying can be formed in the contact surface of the bottom of grinding pad.Multiple grooves can have than under
The little degree of depth of the thickness in portion.At least some in multiple grooves fully can extend across the bottom of grinding pad.Pressure chamber can be by grinding
The internal chamber of mill pad support is formed, and this chamber can have the opening towards substrate, and can be by being coupled to grind grinding pad
Mill pad support seals this opening.Can form multiple hole in the upper surface of grinding pad, and self-grind pad support is multiple
Protuberance can be assembled in multiple hole with relative to grinding pad support member aligned with lower.
In another aspect, grinding pad includes top and one or more bottom.Top has and attaches to liner carrier
Upper surface and the first lateral dimension.One or more bottoms are downwardly projecting from top.The end table of one or more bottoms
Face provides the contact surface contacting substrate during cmp.Each bottom has less than the first lateral dimension
Two lateral dimensions.The total surface area of the contact surface from one or more bottoms is less than the surface area of upper surface
10%.
Embodiment can include the one in following characteristics or more person.At least bottom can include polymer body, and this gathers
Compound main body has substantially homogeneous compositional thing and has the multiple holes being distributed in this main body.Grinding pad can include grinding
Layer, and downwardly projecting bottom can be formed in grinding layer.Liner can include the back bracket layer softer than grinding layer.Can at one or more
Form the groove for slurry conveying on the basal surface of multiple bottoms.One or more bottoms can be made up of single protuberance.Grind
Layer can include flexible transverse section, and this flexible transverse section is thinner than the transverse section of composition abrasive areas.Bottom can include micro-
Hole polyurethane.
In another aspect, chemical machinery polishing system includes：Substrate support, solid during being configured to grinding operation
Hold substantially circular substrate；Grinding pad support member；Grinding pad, is held by pad support；And drive system, it is configured to produce
Relative motion between raw substrate support and grinding pad support member.Grinding pad has arc contact area, and is contacted by arc
The central point of the arc that region is defined and the center substantial registration of the substrate being held by substrate support.
Embodiment can include the one in following characteristics or more person.The width of the arc being defined by arc contact area
Can be between 1mm and 3mm, and the length of arc can be equal to or more than 30mm.At least one of pressure-sensitive cement or holder can
Fixing grinding pad on lining pad support head.Relative motion between substrate support and grinding pad support member can be track fortune
Dynamic, grinding pad support member is maintained in fixed angles orientation by the motion of this track.Relative motion can be around the central rotation of substrate.
In another aspect, grinding assembly includes grinding pad support member and the grinding pad being held by pad support.Grind
Pad support includes annular construction member and has the recess of the opening towards substrate.Grinding pad has contact substrate during grinding
Lapped face.By the remainder of the grinding pad that the peripheral part of grinding pad is vertically fixed in annular construction member and peripheral part
Divide freely vertical.The opening towards substrate being sealed grinding pad support member by grinding pad can pressurised chamber be ground to define
Adjustable pressure is provided on the back surface of pad.
Embodiment can include the one in following characteristics or more person.The peripheral part of grinding pad can be fastened by binder
To annular construction member.One or more holders can hold the peripheral zone of grinding pad on annular construction member.Grinding pad support member
Pedestal can be included and be fastened to the barrier film of pedestal, the volume between pedestal and barrier film can define second can pressurised chamber so that every
The outer surface of film provides the second adjustable pressure on the back surface of grinding pad.Barrier film and second can pressurised chamber can be configured so that
Second can Stress control lapped face in pressurised chamber against the lateral dimension of the load area of substrate.
In another aspect, grinding pad includes top, one or more bottom and multiple hole.Top have attach to lining
The upper surface of pad carrier and the first lateral dimension.One or more bottoms are downwardly projecting from top.One or more bottoms
Basal surface provide during cmp contact substrate contact surface.Each bottom has than the first lateral dimension
The second little lateral dimension is so that top projects past all transverse sides of bottom.In the superposed upper surface in multiple holes
To receive protuberance from liner carrier.Hole is positioned in the section on the top of the transversely outer grinding pad of bottom.
Embodiment can include the one in following characteristics or more person.Can be in the multiple hole of the corner of grinding pad positioning.
Grinding pad can be rectangle.One or more bottoms can have arc-shaped contact surface.Can be in the contact of the bottom of grinding pad
Form the multiple grooves for slurry conveying on surface.
The advantage of the present invention can include following in one or more person.
The little gasket-compensating non-concentric lapping uniformity of experience track motion can be used.Track motion can avoid liner with
There is provided acceptable grinding rate while the undesirable region being ground overlapping, thus improve substrate uniformity.In addition, with
Rotation is compared, and maintains grinding pad can provide more uniform across the region just ground relative to the motion of the track of the fixed orientation of substrate
Grinding rate.
Make to be fastened to the top of the grinding pad of grinding pad support member than the bottom salient portions contacting with substrate in the horizontal
Wider increase the Free Region that liner is connected to support member (for example, passing through pressure-sensitive cement).This can make grinding pad less
Easily leafing during grinding operation.
There is arc contact area so that the grinding pad of contact substrate can maintain the gratifying radial direction of abrasive areas
The grinding rate of improvement is provided while resolution ratio.
Alignment characteristics can ensure that the limited contact district laterally putting grinding pad relative to pad support in known location
Territory, thus reduce the possibility in the undesirable region of grinding base plate.
The part providing the grinding pad of flexure can reduce the flexure of the part of the contact surface of grinding pad, thus improves institute
Abrasive areas and the possibility matching desired by operator.
Groove in the protuberance of grinding pad can promote the conveying of slurry, and therefore can improve grinding rate.
Part not in contact with the grinding pad of substrate can be formed by the material of lower cost, thus reduces liner totle drilling cost.
The liner carrier allowing the size of the part of the contact area against substrate load for the control allows load area and treats
The size of the some position ground matches, thus improves yield while avoiding the undesirable region of grinding base plate.
In general, the non-homogeneous grinding of substrate can be reduced, and gained flatness and the finish of substrate can be improved.
Other aspects of the present invention, feature and advantage will be according to describing and accompanying drawing and aobvious and easy according to claims
See.
Brief description
Fig. 1 is the cross-sectional schematic side view of grinding system；
Fig. 2 is the cross-sectional schematic side view of the embodiment of the grinding system including vacuum chuck to hold substrate；
Fig. 3 is that the schematic cross-sectional side of the embodiment of the grinding system with the grinding pad not including downward protuberance regards
Figure；
Fig. 4 is the schematic cross-section having with upper strata and the embodiment of the grinding system of the grinding pad of downward protuberance
Side view, this upper strata has the diameter bigger than substrate and this downward protuberance has the diameter less than substrate；
While Fig. 5 is to be shown in the angular orientation remaining fixing, in track, the schematic transverse section of the grinding pad of movement is bowed
View；
Fig. 6 is the grinding pad support member of grinding system and the schematic cross-section top view driving row system；
Fig. 6 A is the schematic cross-section top view of the system of Fig. 6 related to substrate；
Fig. 6 B is the schematic cross-section top view of the system of Fig. 6, rotates 1/4th circles relative to Fig. 6 A；
Fig. 7 A is coupled to the schematic cross-section with the removable grinding pad support member of the grinding pad of multiple holder
Side view；
Fig. 7 B is the embodiment of the removable grinding pad support member including the internal pressurization space being sealed by internal diaphragm
Schematic cross-sectional view；
The cross-sectional schematic side view of the removable grinding pad support member of Fig. 7 B that Fig. 8 A is in low-pressure state；
The cross-sectional schematic side view of the removable grinding pad support member of Fig. 7 B that Fig. 8 B is in high pressure conditions；
Fig. 9 is the schematic, bottom view of the contact area of grinding pad；
Figure 10 A and Figure 10 B is the cross-sectional schematic side view of the embodiment of grinding pad；
Figure 11 is the cross-sectional schematic side view of another embodiment of removable grinding pad support member；
Figure 12 is the schematic plan of the embodiment of the grinding system with the grinding pad with arc protuberance layer, should
Arc protuberance layer forms corresponding arc load area；And
Figure 13 is the diagrammatic cross-sectional of the embodiment of the grinding system of the arc lapped face with experience track motion
Face side view.
Figure 14 is the schematic plan of grinding pad.
Same reference numerals instruction similar elements during each is graphic.
Detailed description of the invention
1. introduction
Some grinding technics cause the thickness offset on the surface across substrate.For example, block grinding technics may result in base
Grinding deficiency region on plate.For solving this problem, after block grinds, " finishing " grinding technics may be performed, should " repair
Whole " grinding technics focus on substrate grind not enough part.
In block grinding technics, whole front surfaces of substrate grind, although may be in the difference of front surface
Region is ground with different rates.Not all surfaces of substrate all can the given instant in block grinding technics stand to grind
Mill.For example, owing to there is groove in grinding pad, certain part of substrate surface can not contact with grinding pad.While it is true, at block
During body grinding technics, due to the relative motion between grinding pad and substrate, and this part of no-fix so that substrate complete
A certain amount of grinding of portion's front surface experience.
By contrast, in " finishing " grinding technics, grinding pad may contact the whole front surfaces less than substrate.In addition,
Relative to the range of movement of substrate, grinding pad is configured such that grinding pad only contacts substrate during finishing grinding technics
Regional area, and the signal portion (for example, at least 50%, at least 75% or at least 90%) of the front surface of substrate never contacts
Grinding pad and therefore be not subject to grind.For example, in finishing is ground, contact area can be substantially less than the radius table of substrate
Face.
As noted above, some block grinding technics cause non-homogeneous grinding.Specifically, some block grinding technics are led
Cause to grind not enough local non-concentric and some position heterogeneous.In finishing grinding technics, around the grinding of central rotation of substrate
Mill pad can compensate for the heterogeneity of concentric ring, but possibly cannot solve local non-concentric and some position heterogeneous, for example, thickness
Angle asymmetry in distribution.But, little liner (for example, experiencing the little liner of track motion) can be used for compensating non-concentric and grinds
Mill uniformity.For some embodiments, during grinding, grinding pad can experience the track motion with fixed angles orientation.
Referring to Fig. 1, the milling apparatus 100 of the regional area being used for grinding base plate includes the substrate support holding substrate 10
105 and fixing grinding pad 200 moveable grinding pad support member 300.Grinding pad 200 includes lapped face 250, this grind table
Mask has the diameter less than the radius of the substrate 10 being just ground.
Grinding pad support member 300 dangles from grinding drive system 500, and this grinding drive system will carry during grinding operation
Supply the motion relative to substrate 10 for the grinding pad support member 300.Grind drive system 500 to dangle from supporting construction 550.
In some embodiments, Locating driver system 560 is connected to substrate support 105 and/or grinding pad supports
Part 300.For example, grinding drive system 500 can provide the connection between Locating driver system 560 and grinding pad support member 300.Fixed
Position drive system 560 is operable with the expectation lateral position positioning pad support 300 above substrate support 105.Example
As supporting construction 550 can include two linear actuators 562 and 564, and such linear actuators is oriented as at substrate support
Above in the of 105 relative to each other vertically, to provide Locating driver system 560.Or, substrate can be supported by two linear actuators
Support member 105.Or, substrate support 105 can be rotatable, and grinding pad support member 300 can be from single linear activated
Device dangles, and this single linear actuators provides motion radially.Or, grinding pad support member can be from revolving actuator
508 pendencys and available revolving actuator 506 rotating substrate support 105.
Optionally, vertical actuator (by 506 and/or 508 diagrams) can be connected to substrate support 105 and/or grind
Mill pad support 300.For example, substrate support 105 can be connected to vertically can drive piston, this piston can be raised and lowered base
Plate support 105.
Milling apparatus 100 includes port 60 to distribute the table at substrate 10 to be ground by lapping liquid 65 (such as abrasion slurry)
On face 12.Milling apparatus 100 may also comprise grinding pad regulator and maintains unanimously grinding pad 200 to denude grinding pad 200
In abrasion state.
In operation, for example loaded substrate 10 to substrate support 105 by robot.Locating driver system 500
Position grinding pad support member 300 and grinding pad 200 at desired locations on the substrate 10, and substrate is moved by vertical actuator 506
Move into and contact with grinding pad 200 (or vice versa utilize actuator 508 to carry out).Grind drive system 500 and produce grinding pad support
Relative motion between part 300 and substrate support 105 is to cause the grinding of substrate 10.
During grinding operation, Locating driver system 560 can be substantially opposite hold grinding drivetrain with being fixed to one another
System 500 and substrate 10.For example, alignment system can hold grinding drive system 500 still relative to substrate 10, or can be across waiting to grind
The region of mill slowly (is supplied to compared with the motion of substrate 10 with grinding drive system 500) scan grinding drive system 500.Example
As the instantaneous velocity that Locating driver system 500 is supplied to substrate is smaller than grinding the instantaneous speed that drive system 500 is supplied to substrate
The 5% of degree, for example, is less than 2%.
Grinding system also includes controller 90, for example, programmable computer.Controller can include CPU
91st, memory 92 and support circuit 93.The CPU 91 of controller 90 performs from memory 92 via support circuit 93
The instruction loading, to allow controller receive input based on environment and desired abrasive parameters and control various actuator and drive
Dynamic system.
For " finishing " grinding operation, controller 90 is programmed to control Locating driver system 560, even if thus
Slowly scan grinding drive system 500, also limit the range of movement grinding drive system 500 so that grind work in finishing
During skill, the signal portion (for example, at least 50%, at least 75% or at least 90%) of the front surface of substrate never contacts and grinds
Mill pads and is therefore not subject to grind.
2. grinding system
A. substrate support
Referring to Fig. 1, substrate support 105 is in the plate-like body below grinding pad support member.The upper surface 116 of main body
The load area being sufficiently large to receive pending substrate is provided.For example, substrate can be 200mm to 450mm diameter substrates.Base
The upper surface 116 of plate support 105 contacts the back surface (that is, the surface do not ground) of substrate 10 position maintaining back surface
Put.
Substrate support 105 has the radius about the same or bigger with substrate 10.In some embodiments, substrate props up
Support member 105 slightly narrower than substrate (for example, referring to Fig. 2), the 1%-2% of for example narrow than substrate substrate diameter.When being seated in support member
When on 105, the edge of substrate 10 extends slightly from the edge of support member 105.This can provide gap so that edge clamping device people exists
Substrate is put on support member.In some embodiments, substrate support 105 is wider than substrate.In this case, have with very
The robot of the end effectors of empty chuck can be used for putting substrate on support member.In either case, substrate support 105 can
Contact with the most surfaces on the dorsal part of substrate.
In some embodiments, as it is shown in figure 1, substrate support 105 utilizes clamp assemblies 111 during grinding operation
Maintain substrate 10 position.In some embodiments, clamp assemblies 111 can be single ring gripping ring 112, and this holding ring connects
Touch the edge of the top surface of substrate 10.Or, clamp assemblies 111 can include two arc holders 112, such arc holder
The edge of the top surface on the opposite side of contact substrate 10.Can be by one or more actuators 113 by clamp assemblies 111
Holder 112 is reduced to the EDGE CONTACT with substrate.Horizontal shifting during grinding operation for the downward force suppression substrate of holder
Dynamic.In some embodiments, one or more holders include the outer peripheral downwardly projecting flange 114 around substrate.
In some embodiments, as in figure 2 it is shown, substrate support 105 is vacuum chuck 106.Vacuum chuck 106 includes
Chamber 122 and multiple port 124, chamber 122 is connected to support the surface 116 of substrate 10 by such port.In operation, can example
As discharged air from chamber 122 by pump 129, thus apply suction to support substrate holder at substrate via port 124
In appropriate location on part 106.
In some embodiments, as it is shown on figure 3, substrate support 105 includes retainer 131.Can be by attached for retainer 131
It is connected to support the surface 116 of substrate 10, and side protrudes on a surface.Generally, retainer is at least thick (vertical as substrate 10
Measure in surface 12).In operation, retainer 131 is around substrate 10.For example, retainer 131 can be circumferential body, this ring
Shape main body has the diameter slightly larger diameter than substrate 10.During grinding, the friction from grinding pad 200 can be on the substrate 10
Produce cross force.But, the transverse movement of retainer 131 restricting substrate 10.
Various substrate support feature as described above can optionally combination with one another.For example, substrate support can include
Both vacuum chuck and retainer.
Although in addition, for the ease of diagram combine pressure-sensitive cement may move pad support configuration substrate support is shown
Configuration, but such configuration can make together with any one in the embodiment of lining pad support head described below and/or drive system
With.
B. grinding pad
Referring to Fig. 1, grinding pad 200 has lapped face 250, this lapped face during grinding with substrate 10 in contact zone
Territory (also referred to as load area) produces contact.Lapped face 250 can have the diameter less than the radius of substrate 10.For example, grind
The diameter on mill surface can be the about 5%-10% of the diameter of substrate.For example, straight for having in the range of 200mm to 300mm
The wafer in footpath, the diameter of lapped face can be between 10mm and 30mm.Less lapped face provides more accuracy but yield
Relatively low.
In some embodiments, substrate surface can locate at any given time to contact with lapped face less than 1%.Greatly
For body, although this can be used for repairing grinding operation, but this zonule can not be accepted by block grinding operation because of low yield.
In some embodiments, for example as it is shown on figure 3, whole grinding pad (for example, such as the outward flange of measurement to liner)
There is the diameter less than the radius of substrate 10.For example, the diameter of grinding pad can be the about 5%-10% of the diameter of substrate.
In example in FIG, upper surface grinding pad positioned over 200 at substrate 10, and this grinding pad includes coupling
To top 270 and the bottom 260 with basal surface 250 of the bottom that may move pad support 300, this basal surface is grinding behaviour
Contact with substrate 10 during work.In some cases, as it is shown in figure 1, ground by dividing the jut of 270 to provide from upper wide
The bottom 260 of pad 200.The basal surface 250 of jut 260 touches substrate during grinding operation, and provides lapped face.
In example in FIG, use pressure-sensitive cement 231 that moveable pad support 300 is coupled to grinding pad
The top 270 of 200.It is coated on the pressure-sensitive cement between the basal surface of grinding pad support member 300 and the top surface of grinding pad 200
231 maintain grinding pad 200 to couple in pad support 300 during grinding operation.
Wider than bottom 260 by the top 270 that makes grinding pad 200, increase the available surface area of binder 231.Increase
The surface area adding binder 231 can improve the bond strength between liner 200 and pad support, and reduces grinding during grinding
The leafing risk of mill pad.
Referring to Fig. 3, the bottom 260 of grinding pad 203 can have the radius identical with top 273.But, work as pressure-sensitive cement
Between 231 offer liners and removable pad support 300 when coupling, preferably bottom is 263 narrower than top 273.
Referring to Fig. 5, the contact area 5 of grinding pad can be the dish type geometry being formed by the tray-shaped bottom jut of grinding pad
Shape 5.
Referring to Fig. 9 A and Fig. 9 B, the contact area 901 of the grinding pad 110 contacting with substrate 10 can be by the arc of grinding pad
The arc contact area 901 that shape jut 290 is formed.
Referring to Fig. 1, in some embodiments, the diameter on the top 270 of grinding pad 200 is little than the diameter of substrate 10.
Referring to Fig. 4, in some embodiments, the diameter on the top 274 of grinding pad 204 is big than the diameter of substrate 10.
Referring to Fig. 1, grinding pad 200 can be made up of the single layer of uniform constituent.In this case, top 270 and bottom
The material composite of 260 (also referred to as juts 260) is identical.
Referring to Figure 10 B, in some embodiments, grinding pad 200 can include two or more layers of different constituent,
Such as grinding layer 1062 and more compressible back bracket layer 1052.Optionally, middle pressure-sensitive bonding coat 1032 can be used for grinding layer
1061 are fastened to back bracket layer 1061.In this case, top 1221 may correspond to back bracket layer 102, and bottom 1222 may correspond to
Grinding layer 1062.Via pressure sensitive adhesion layer 231, grinding pad can be coupled to grinding pad support member.
Referring to Figure 10 A, in some embodiments, grinding pad can include having two or more of different constituent
Layer, and the top 1221 of grinding pad 200 can include both upper curtates 1064 of back bracket layer 1052 and grinding layer 1062.Therefore, grind
Mill layer 1062 includes both lower curtate 1066 and the upper curtate 1062 providing jut 1222, and wherein upper curtate 1064 compares lower curtate
1066 is wide.
Via pressure sensitive adhesion layer 321, grinding pad can be coupled to grinding pad support member.
In any embodiment shown in Figure 10 A or Figure 10 B, grinding layer 1062 can be by the single layer of uniform constituent
Composition.For example, in any embodiment shown in Figure 10 A or Figure 10 B, the part of the liner of contact substrate can have routine
Material, such as microporous polymer, such as polyurethane.
Referring to Figure 10 A, back bracket layer 1052 can be relatively soft to allow preferably when grinding uneven substrate surface point position
Grinding pad flexible.Grinding layer 1064 can be hard polyurethane.
Referring to Figure 10 B, back bracket layer 1052 can be relatively soft but it also may is by such as PET (example
Such as MylarTM) the flexible incompressible stratum made of material.For example, this liner configuration can be used in embodiment, wherein will figure
The grinding pad of 10B is coupled to the pressurised chamber grinding pad support member of Figure 11.Grinding layer 1062 can be hard polyurethane.
Referring to Figure 11, in some embodiments, grinding pad 205 can include top 275 and bottom 260.Grinding pad 205 has
Having thicker transverse section 267, this transverse section includes bottom 260 and the top 275 of combination.Top 275 is at thicker section 267
On either side laterally extending to provide transverse side section 285.Transverse side section 285 is in response to the pressure on thicker section 267
Power and bend.Thicker section 267 can have the liner thickness of about 2mm in abrasive areas, and this abrasive areas is similar to large scale
Liner.Liner thickness in the transverse section 285 of flexure can be about 0.5mm.
In some embodiments, the basal surface 250 of the bottom of grinding pad 200 can include groove to allow in the grinding operation phase
Between conveying slurry.Groove 299 more shallow than the degree of depth of bottom 260 (for example, referring to Figure 11).But, in some embodiments, under
Portion does not include groove.If grinding pad includes groove, then groove 299 can be fully extended across the transverse width of bottom 260.In addition, under groove is comparable
The vertical thickness in portion 260 is more shallow, i.e. groove in a vertical manner partly rather than pass completely through bottom 260.
Referring to Fig. 9, the basal surface 1900 of grinding pad 200 can be arc area.If this grinding pad includes groove, then groove 299
Can be fully extended across the transverse width of arc area.Can the length in arcuately region with proportional spacing spaced-apart slots 299.Each groove
299 can extend along the radius at the center 1903 through groove and arc area, or relative to this radius with an angle (for example, 45 °)
Position each groove 299.
Referring to Figure 14, in some embodiments, grinding pad 200 includes alignment characteristics, and such alignment characteristics and liner prop up
Matching characteristic in support member 300 matches, and the bottom 260 to guarantee grinding pad 200 and offer contact area 250 is located relative to lining
In the known lateral attitude of pad support 300.
For example, grinding pad 200 can include the recess 1402 being formed in the back surface of grinding pad 200.Can be in grinding pad
Get out recess 1402 relative in the known location of contact area 250 with machine.Can thin convex on the top 270 of grinding pad 200
Location indentations 1402 in edge or outside lateral part 285.Recess can partially or completely extend through grinding pad.Pad support
300 can include pin 1404 (for example, downwardly projecting from plate), and such pin is assembled in recess 1402.
As another example, after grinding pad 200 defines contact area 250, at least the one of grinding pad 200 can be processed
A little edges 1406.Pad support 300 can include the recess being machined in support member plate.The edge of recess includes alignment table
Face, and the alignment surface of recess that the edge 1406 of grinding pad is located in adjoining plate.
The bottom 260 of the grinding pad 200 of contact substrate can be formed by high-quality material, and this high-quality material for example meets just
The material of the high-accuracy specification of property, porosity etc..But, it is high that other parts of the grinding pad not contacting substrate need not meet this type of
Tight specifications, and therefore can be formed by the material of lower cost.This can reduce liner totle drilling cost.
C. drive system and the track of liner moves
Referring to Fig. 1 and Fig. 5, grind drive system 500 can be configured with during grinding operation on the substrate 10 side with rail
The mobile grinding pad support member 300 coupling of road motion and grinding pad 200.Specifically, as it is shown in figure 5, grinding drive system 500 can
Surely it is maintained upward by grinding pad in the fixed angles relative to substrate during being configured to grinding operation.
Referring to Fig. 5, the orbit radius 20 of the grinding pad contacting with substrate is preferably little than the diameter 22 of contact area.For example,
Orbit radius can be the about 5%-50% (for example, 5%-20%) of the diameter of contact area.20mm to 30mm diameter is connect
Touching region, orbit radius can be 1mm to 6mm.This achieves more uniform VELOCITY DISTRIBUTION in load area 5.Grinding pad can
Move in track transfer with the speed with revolutions per minute 1000 to 5000 (" rpm ").
Referring to Fig. 6, driving row (drive train) can include mechanical system pedestal 910, this mechanical system pedestal utilizes single
Individual actuator 915 realizes that track moves.Motor output shaft 924 connectivity is coupled to cam 922.Cam 922 extends to grind
In recess 928 in pad holder 920.During grinding operation, motor output shaft 924 rotates around rotary shaft 990, thus draws
Send out cam 922 and rotate grinding pad holder 920.It is solid that multiple anti-rotation connecting rods 912 extend to grinding pad from mechanical system pedestal 910
The top of holder 920 rotates to prevent liner holder 920.The anti-rotation connecting rod 912 that motion with cam 922 combines achieves
The track motion of grinding pad support member, wherein the angular orientation of grinding pad holder 920 does not change during grinding operation.
As described in Fig. 6 A and Fig. 6 B, track motion can maintain grinding pad consolidating relative to substrate during grinding operation
Determine angular orientation.As central motor output shaft 620 rotates, with the cam 625 of anti-rotation connecting rod 630 combination, rotary motion is translated
To the track motion of grinding pad 610, top mechanical system pedestal is connected to grinding pad support member by such anti-rotation connecting rod.This
Achieve more more uniform VELOCITY DISTRIBUTION than simple rotation.
In some embodiments, grinding drive system and Locating driver system are provided by same components.For example, single
Drive system can include two linear actuators, and such linear actuators is configured to move liner in two perpendicular direction and props up
Fastener.For positioning, controller can cause actuator that pad support moves the desired locations to substrate.For grinding,
Controller can be for example by causing actuator mobile with track motion to two actuators the application of phase offset sinusoidal signal
Pad support.
Referring to Fig. 1, in some embodiments, grind drive system 500 and can include two revolving actuators.For example, grind
Mill pad support can dangle from revolving actuator 508, this revolving actuator and then dangle from the second revolving actuator 509.Grinding
During mill operation, the second revolving actuator 509 turning arm 510, this arm scans grinding pad support member 300 in track motion.The
One revolving actuator 508 is for example on the direction contrary with the second revolving actuator 509 but with identical rotating speed rotation to offset
Rotary motion, so that along track while grinding pad assembly is in being maintained at relative to the substantially fixed Angle Position of substrate
Motion.
D. pad support
Moveable pad support 300 holds grinding pad, and is coupled to grind drive system 500.
In certain embodiments, for example as shown in Figures 1 to 4, pad support 300 is simple rigid plate.The following table of plate
Face 311 is sufficiently large to accommodate the top 270 of grinding pad 200.
But, pad support 300 may also comprise actuator 508 to control the downward pressure to substrate 10 for the grinding pad 200.
In example in fig. 7, illustrating pad support 300, this pad support can apply on grinding pad 200 can
Pressure regulation power.Pad support 300 includes pedestal 317, and this pedestal is through being coupled to grind drive system 500.The bottom bag of pedestal 317
Include recess 327.Pad support 300 includes holder 410, and this holder holds the edge of grinding pad 200 on pedestal 317.
Grinding pad 200 can cover recess 327 can pressurised chamber 426 to define.By by fluid pumping turnover chamber 426, can adjust and grind
Mill pad 200 downward pressures to substrate 10.
In some embodiments, as shown in Fig. 7 B, Fig. 8 A and Fig. 8 B, pad support 300 can have internal diaphragm
405, this internal diaphragm defines first between barrier film 405 and pedestal 317 can pressurised chamber 406.Barrier film be located to contact from
The side 275 of the farther grinding pad of lapped face 258 200.Barrier film 405 and chamber 406 are configured such that and work as pad support
300 during grinding operation hold grinding pad 200 when, the load on the substrate 10 of the Stress control grinding pad 200 in chamber 406
The size in region 809.When the pressure of chamber interior increases, expand barrier film radius, thus to the bottom salient portions layer of liner
Major part applies pressure, and therefore increases the area of load area 810.When the pressure decreases, result is the negative of reduced size
Carry region 809.
Referring to Figure 11, in some embodiments, grinding pad support member 315 can include by the wall of grinding pad support member 315
320 inside being formed can pressurised chamber 325.Chamber 325 can have the opening 327 towards substrate.Can be by for example by holder
Grinding pad 200 is fastened to grinding pad support member 315 by 410 seals opening 327.During grinding operation, can be for example by control
Device processed and hydraulic pump dynamically control the pressure in pressure chamber 425 to regulate to the non-uniform point position just ground.
Referring to Figure 12, in some embodiments, the contact area 1301 of grinding pad 20 can be arc area.For example,
Jut can be arc.Drive system 500 can rotate this arc around the center 1302 of substrate 10.
Referring to Figure 13, in certain embodiments, grinding pad 200 contact area 901 can be arc area, this arc area
Experience is relative to the track motion of substrate 10.
3. conclusion
Heteropical some position size on substrate will indicate the preferable chi of contact area during the grinding of this some position
Very little.If contact area is excessive, then the not enough correction of grinding to some regions on substrate may result in excessively grinding of other regions
Mill.On the other hand, if contact area is too small, then needs are moved to cover the not enough region of grinding by liner across substrate, thus reduce
Yield.
In substrate processing operation, substrate can first experience block grinding technics, wherein holds on the whole front surface of substrate
Row grinds.Optionally, after block grinding operation, for example the non-homogeneous of substrate can be measured at in-line arrangement or individually tolerance station
Property.Milling apparatus 100 can be delivered the substrate to subsequently, and experience finishing grinding technics.To district to be ground at milling apparatus
The control in territory can be based on the identification grinding not enough region of substrate, and this identification (for example, is produced during Quality Identification from historical data
Raw thickness measure) or the substrate measurement at in-line arrangement or individually tolerance station.
Whole grinding system may be disposed to vertical or (relative to gravity) positioning substrate that faces down front surface.But, make
The supine advantage of front surface obtaining substrate is that this allows distributed slurry on the face of substrate.Owing to substrate is relative to grinding pad
The large-size of lapped face, this can improve slurry and be detained and therefore reduce slurry and use.
Have been described above numerous embodiments of the present invention.Nevertheless, it will be understood that, can be without departing substantially from the spirit of the present invention and model
In the case of enclosing, various modification can be adapted.For example, in certain embodiments, substrate support can include the actuator of oneself, such
Actuator can move substrate to the appropriate location relative to grinding pad.As another example, although as described above
Move the drive system of grinding pad in orbital path while system includes holding substrate in substantially fixed position, but
Can hold in substantially fixed position grinding pad and in track moving substrate.In this case, grinding drive system can
It being similar drive system, but is coupled to substrate support, rather than grinding pad support member.Although with substantial circular substrate, but
This is simultaneously nonessential, and support member and/or grinding pad can be other shapes such as rectangular (in this case, " radius " or
The discussion of " diameter " will be generally adapted for the lateral dimension along main shaft).
Therefore, in the range of other embodiments are in claims below.
Claims (25)
1. a chemical machinery polishing system, comprises：
Substrate support, is configured to fixing substrate during grinding operation；
Grinding pad support member；
Grinding pad, is held by described pad support, described grinding pad have be fastened to described grinding pad support member top and
From downwardly projecting bottom, described top, the upper surface on wherein said top adjoins described grinding pad support member, described bottom
Basal surface provides the contact surface of the top surface contacting described substrate during grinding, and described contact surface is than the institute of described substrate
State top surface little, and described top has the first lateral dimension and described bottom has the second lateral dimension, described second horizontal stroke
Less than described first lateral dimension to size；And
Drive system, is configured to produce the relative motion between described substrate support and described grinding pad support member.
2. chemical machinery polishing system as claimed in claim 1, wherein said grinding pad support member comprises plate, and described plate has
Cross over the surface of described grinding pad, and the substantially all of upper surface on the described top of described grinding pad adjoins the table of described plate
Face.
3. chemical machinery polishing system as claimed in claim 1, wherein said grinding pad support member comprises annular construction member, described
The peripheral part of the upper surface on the described top of grinding pad adjoins the described upper table in described annular construction member, and described peripheral part
The remainder in face does not contact described grinding pad support member.
4. chemical machinery polishing system as claimed in claim 3, comprises one or more holder, one further
Or more holders hold the peripheral zone of described grinding pad in described pad support.
5. chemical machinery polishing system as claimed in claim 3, the described top of wherein said grinding pad includes bending section,
Described flexure section has bigger flexibility than the section of the described grinding pad above described contact surface.
6. chemical machinery polishing system as claimed in claim 1, further contained in the connecing of described bottom of described grinding pad
Touch the multiple grooves for slurry conveying on surface, at least some in wherein said multiple grooves across described grinding pad described under
Portion is fully extended.
7. chemical machinery polishing system as claimed in claim 1, comprises pressure chamber further, and described pressure chamber is by described
The internal chamber of grinding pad support member is formed, and described chamber has the opening towards substrate, and by coupling described grinding pad
Seal described opening to described grinding pad support member.
8. a grinding pad, comprises：
Top, described top has the upper surface attaching to liner carrier, and described top has the first lateral dimension；And
One or more bottoms, one or more bottoms are downwardly projecting from described top, one or more
The basal surface of bottom provides the contact surface contacting substrate during cmp, and each bottom has ratio described first
The second little lateral dimension of lateral dimension, and wherein from one or the contact surface of more bottoms total surface area not
Exceed described upper surface surface area 10%.
9. grinding pad as claimed in claim 8, bottom described at least a part of which is polymer body, and described polymer body has
Substantially homogeneous compositional thing and there are the multiple holes being distributed in described main body.
10. grinding pad as claimed in claim 8, comprises grinding layer, wherein formed in described grinding layer downwardly projecting under
Portion.
11. grinding pads as claimed in claim 8, wherein said one or more bottoms are made up of single protuberance.
12. grinding pads as claimed in claim 8, wherein said grinding layer includes flexible transverse section, described flexible transverse district
The transverse section of section described abrasive areas than composition is thinner.
13. 1 kinds of chemical machinery polishing systems, comprise：
Substrate support, holds substrate on substantially fixed angular orientation during being configured to grinding operation；
Moveable pad support, is configured to hold grinding pad, and described grinding pad has the radius of no more than described substrate
Diameter；And
Drive system, with the mobile institute of track motion while being configured to the upper surface of described grinding pad and described substrate
Stating pad support and grinding pad, the motion of described track has the orbit radius of the diameter of no more than described grinding pad and by described
Grinding pad maintains relative on the fixing angular orientation of described substrate.
14. systems as claimed in claim 13, comprise described grinding pad further, and it is described that wherein said grinding pad has contact
The contact area of substrate, and the diameter of described contact area is between about between 1% and 10% of diameter of described substrate.
15. systems as claimed in claim 13, comprise described grinding pad further, and it is described that wherein said grinding pad has contact
The contact area of substrate, and wherein said orbit radius is between about between 5% and 50% of diameter of described contact area.
16. systems as claimed in claim 13, wherein said drive system comprises the recess in described lining pad support head, extension
To the rotatable cam in described recess, for rotating motor and the connecting rod of described cam, described liner is propped up by described connecting rod
The support member that fastener is coupled to fix is to prevent the rotation of described lining pad support head.
17. 1 kinds of chemical machinery polishing systems, comprise：
Substrate support, holds described substrate on substantially fixed angular orientation during being configured to grinding operation；
Grinding pad, described grinding pad has the contact area contacting described substrate, and described contact area has no more than described base
The diameter of the radius of plate；
Moveable pad support, is configured to hold described grinding pad；
Drive system, with track while being configured to the upper surface of the contact area of described grinding pad and described substrate
The mobile described pad support of motion and grinding pad, the motion of described track has the track half of the diameter of no more than described grinding pad
Footpath and described grinding pad being maintained relative on the fixing angular orientation of described substrate.
18. 1 kinds of chemical and mechanical grinding methods, described method comprises the steps of：
Making grinding pad produce in contact area with substrate to contact, described contact area has the radius of no more than described substrate
Diameter；
Produce described grinding pad and described base while the upper surface of contact area and the described substrate of described grinding pad
Relative motion between plate, described relative motion comprises track motion, and the motion of described track has no more than described grinding pad
The orbit radius of diameter；And
During described track moves, described grinding pad is maintained the substantially fixed angular orientation relative to described substrate
On.
19. methods as claimed in claim 18, comprise the steps of：During described track moves, in fixing horizontal position
Put the described substrate of middle fixing.
20. methods as claimed in claim 19, comprise the steps of further：During described track moves, to be not more than
The speed of about the 5% of the instantaneous velocity of described track motion laterally scans described grinding pad across described substrate.
21. 1 kinds of chemical machinery polishing systems, comprise：
Substrate support, holds substantially circular substrate during being configured to grinding operation；
Grinding pad support member；
Grinding pad, is held by described pad support, and described grinding pad has arc contact area, is wherein contacted by described arc
The central point of the arc that region is defined and the center substantial registration of the described substrate being held by described substrate support；And
Drive system, is configured to produce the relative motion between described substrate support and described grinding pad support member.
22. 1 kinds of grinding assemblies, comprise：
Grinding pad support member, described grinding pad support member includes annular construction member and has the recess of the opening towards substrate；And
Grinding pad, is held by described pad support, and described grinding pad has during grinding the lapped face contacting substrate, its
The middle peripheral part by described grinding pad is vertically fixed to the described grinding pad in described annular construction member, and described peripheral part
Remainder freely vertical；And wherein described grinding pad is sealed the opening towards substrate described in described grinding pad support member
Pressurised chamber can to provide adjustable pressure on the back surface of described grinding pad to define.
23. grinding assemblies as claimed in claim 22, wherein said grinding pad support member includes pedestal and is fastened to described base
The barrier film of seat, the volume between described pedestal and described barrier film define second can pressurised chamber so that the outer surface of described barrier film
The back surface of described grinding pad provides the second adjustable pressure.
24. 1 kinds of grinding pads, comprise：
Top, described top has the upper surface attaching to liner carrier, and described top has the first lateral dimension；
One or more bottoms, one or more bottoms are downwardly projecting from described top, one or more
The basal surface of bottom provides the contact surface contacting substrate during cmp, and each bottom has ratio described first
The second little lateral dimension of lateral dimension is so that described top projects past all transverse sides of described bottom；And
Multiple holes, the plurality of hole is positioned in the upper surface on described top to receive protuberance, described Kong Ding from described liner carrier
Position is in the section on the top of the transversely outer described grinding pad of described bottom.
25. grinding pads as claimed in claim 24, wherein in the plurality of hole of the corner of described grinding pad positioning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010973754.0A CN112123196B (en) | 2014-07-17 | 2015-07-10 | Method, system and polishing pad for chemical mechanical polishing |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/334,608 US10076817B2 (en) | 2014-07-17 | 2014-07-17 | Orbital polishing with small pad |
| US14/334,608 | 2014-07-17 | ||
| US201462039840P | 2014-08-20 | 2014-08-20 | |
| US14/464,633 US10207389B2 (en) | 2014-07-17 | 2014-08-20 | Polishing pad configuration and chemical mechanical polishing system |
| US62/039,840 | 2014-08-20 | ||
| US14/464,633 | 2014-08-20 | ||
| PCT/US2015/040065 WO2016010866A1 (en) | 2014-07-17 | 2015-07-10 | Method, system and polishing pad for chemical mechancal polishing |
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| CN202010973754.0A Division CN112123196B (en) | 2014-07-17 | 2015-07-10 | Method, system and polishing pad for chemical mechanical polishing |
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| CN106463383A true CN106463383A (en) | 2017-02-22 |
| CN106463383B CN106463383B (en) | 2020-10-16 |
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| CN202010973754.0A Active CN112123196B (en) | 2014-07-17 | 2015-07-10 | Method, system and polishing pad for chemical mechanical polishing |
| CN201580030724.3A Active CN106463383B (en) | 2014-07-17 | 2015-07-10 | Method and system for chemical mechanical polishing and polishing pad |
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|---|---|
| JP (2) | JP2017522733A (en) |
| KR (1) | KR102399064B1 (en) |
| CN (2) | CN112123196B (en) |
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| WO (1) | WO2016010866A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107253131A (en) * | 2017-07-31 | 2017-10-17 | 深圳市汉匠自动化科技有限公司 | A kind of 3D screens grinder |
| CN110352115A (en) * | 2017-03-06 | 2019-10-18 | 应用材料公司 | It is mobile for the spiral and concentric circles of the position CMP particular abrasive (LSP) design |
| CN112171504A (en) * | 2020-09-30 | 2021-01-05 | 李善龙 | Wafer etching back grinding machine |
| USD1022364S1 (en) | 2022-06-03 | 2024-04-09 | Entegris, Inc. | Polyvinyl alcohol pad |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| US20230390808A1 (en) * | 2022-06-03 | 2023-12-07 | Entegris, Inc. | Devices for cleaning substrates and related methods |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5558563A (en) * | 1995-02-23 | 1996-09-24 | International Business Machines Corporation | Method and apparatus for uniform polishing of a substrate |
| JP2001237206A (en) * | 1999-12-15 | 2001-08-31 | Matsushita Electric Ind Co Ltd | Flattening method |
| US20010019934A1 (en) * | 1997-03-21 | 2001-09-06 | Matsuomi Nishimura | Polishing apparatus including holder and polishing head with rotational axis of polishing head offset from rotational axis of holder and method of using |
| US6315641B1 (en) * | 1998-07-31 | 2001-11-13 | Semicontect Corp | Method and apparatus for chemical mechanical polishing |
| US20020037685A1 (en) * | 2000-09-26 | 2002-03-28 | Towa Corporation | Polishing apparatus and polishing method |
| US20020037649A1 (en) * | 1999-12-15 | 2002-03-28 | Matsushita Electric Industrial Co., Ltd. | Method for carrying out planarization processing |
| JP2004074310A (en) * | 2002-08-12 | 2004-03-11 | Nikon Corp | Polishing body, polishing device equipped therewith, semiconductor device manufacturing method using the same, and semiconductor device manufactured thereby |
| US20060019588A1 (en) * | 2004-07-20 | 2006-01-26 | Fujitsu Limited | Polishing pad, polishing apparatus having the same, and bonding apparatus |
| CN101100048A (en) * | 2006-07-03 | 2008-01-09 | 三芳化学工业股份有限公司 | Grinding cushion with surface texture |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5274960A (en) * | 1990-10-23 | 1994-01-04 | Speedfam Corporation | Uniform velocity double sided finishing machine |
| MY114512A (en) * | 1992-08-19 | 2002-11-30 | Rodel Inc | Polymeric substrate with polymeric microelements |
| US5232875A (en) * | 1992-10-15 | 1993-08-03 | Micron Technology, Inc. | Method and apparatus for improving planarity of chemical-mechanical planarization operations |
| US5897424A (en) * | 1995-07-10 | 1999-04-27 | The United States Of America As Represented By The Secretary Of Commerce | Renewable polishing lap |
| JP3329644B2 (en) * | 1995-07-21 | 2002-09-30 | 株式会社東芝 | Polishing pad, polishing apparatus and polishing method |
| US5785584A (en) * | 1996-08-30 | 1998-07-28 | International Business Machines Corporation | Planarizing apparatus with deflectable polishing pad |
| JPH10309660A (en) * | 1997-05-07 | 1998-11-24 | Tokuyama Corp | Finishing abrasive |
| US5964653A (en) * | 1997-07-11 | 1999-10-12 | Applied Materials, Inc. | Carrier head with a flexible membrane for a chemical mechanical polishing system |
| JP2000158327A (en) * | 1998-12-02 | 2000-06-13 | Rohm Co Ltd | Polishing cloth for chemimechanical polishing and chemimechanical polisher using same |
| JP2000218514A (en) * | 1999-02-02 | 2000-08-08 | Nikon Corp | Polisher and polishing method |
| US6527624B1 (en) * | 1999-03-26 | 2003-03-04 | Applied Materials, Inc. | Carrier head for providing a polishing slurry |
| JP2000301450A (en) * | 1999-04-19 | 2000-10-31 | Rohm Co Ltd | Cmp polishing pad and cmp processing device using it |
| JP2001118812A (en) * | 1999-08-09 | 2001-04-27 | Nikon Corp | Chemical mechanical-polishing device and manufacturing method of semiconductor device |
| US6343975B1 (en) * | 1999-10-05 | 2002-02-05 | Peter Mok | Chemical-mechanical polishing apparatus with circular motion pads |
| KR20030028482A (en) * | 2000-08-03 | 2003-04-08 | 가부시키가이샤 니콘 | Chemical-mechanical polishing apparatus, polishing pad, and method for manufacturing semiconductor device |
| US6676497B1 (en) * | 2000-09-08 | 2004-01-13 | Applied Materials Inc. | Vibration damping in a chemical mechanical polishing system |
| US7255637B2 (en) * | 2000-09-08 | 2007-08-14 | Applied Materials, Inc. | Carrier head vibration damping |
| CN1287042A (en) * | 2000-09-12 | 2001-03-14 | 王楠 | Translating revoluting grinding head |
| US6561881B2 (en) * | 2001-03-15 | 2003-05-13 | Oriol Inc. | System and method for chemical mechanical polishing using multiple small polishing pads |
| KR100621629B1 (en) * | 2004-06-04 | 2006-09-19 | 삼성전자주식회사 | Polishing head used in chemical mechanical polishing apparatus and polishing method |
| KR100634450B1 (en) * | 2005-01-06 | 2006-10-16 | 삼성전자주식회사 | Chemical mechanical polishing apparatus and platen used in the apparatus |
| JP2009536462A (en) * | 2006-05-03 | 2009-10-08 | セント ローレンス ナノテクノロジー， インコーポレイテッド | Chemical mechanical polishing method and apparatus for large wafer capable of polishing individual dies |
| JP2008290197A (en) * | 2007-05-25 | 2008-12-04 | Nihon Micro Coating Co Ltd | Polishing pad and method |
| JP5120697B2 (en) * | 2007-12-18 | 2013-01-16 | 株式会社ニコン | Polishing equipment |
| JP2010064196A (en) * | 2008-09-11 | 2010-03-25 | Ebara Corp | Substrate polishing device and substrate polishing method |
| JP5347980B2 (en) * | 2010-01-14 | 2013-11-20 | 住友金属鉱山株式会社 | Metallized polyimide film and flexible wiring board using the same |
| JP3163748U (en) * | 2010-08-19 | 2010-10-28 | 新日鉄マテリアルズ株式会社 | CMP dresser |
| CN102884612B (en) * | 2011-01-03 | 2017-02-15 | 应用材料公司 | Pressure controlled polishing platen |
| KR101387923B1 (en) * | 2012-08-27 | 2014-04-22 | 주식회사 케이씨텍 | Membrane of carrier head in chemical mechanical polishing apparatus and carrier head having same |
| KR101411836B1 (en) * | 2012-11-27 | 2014-06-25 | 주식회사 케이씨텍 | Membrane of carrier head in chemical mechanical polishing apparatus and carrier head using same |
-
2015
- 2015-07-07 TW TW104122052A patent/TWI692385B/en active
- 2015-07-10 CN CN202010973754.0A patent/CN112123196B/en active Active
- 2015-07-10 CN CN201580030724.3A patent/CN106463383B/en active Active
- 2015-07-10 WO PCT/US2015/040065 patent/WO2016010866A1/en active Application Filing
- 2015-07-10 KR KR1020177002230A patent/KR102399064B1/en active IP Right Grant
- 2015-07-10 JP JP2017502673A patent/JP2017522733A/en not_active Ceased
-
2020
- 2020-02-05 JP JP2020017600A patent/JP6955592B2/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5558563A (en) * | 1995-02-23 | 1996-09-24 | International Business Machines Corporation | Method and apparatus for uniform polishing of a substrate |
| US20010019934A1 (en) * | 1997-03-21 | 2001-09-06 | Matsuomi Nishimura | Polishing apparatus including holder and polishing head with rotational axis of polishing head offset from rotational axis of holder and method of using |
| US6315641B1 (en) * | 1998-07-31 | 2001-11-13 | Semicontect Corp | Method and apparatus for chemical mechanical polishing |
| JP2001237206A (en) * | 1999-12-15 | 2001-08-31 | Matsushita Electric Ind Co Ltd | Flattening method |
| US20020037649A1 (en) * | 1999-12-15 | 2002-03-28 | Matsushita Electric Industrial Co., Ltd. | Method for carrying out planarization processing |
| US20020037685A1 (en) * | 2000-09-26 | 2002-03-28 | Towa Corporation | Polishing apparatus and polishing method |
| JP2004074310A (en) * | 2002-08-12 | 2004-03-11 | Nikon Corp | Polishing body, polishing device equipped therewith, semiconductor device manufacturing method using the same, and semiconductor device manufactured thereby |
| US20060019588A1 (en) * | 2004-07-20 | 2006-01-26 | Fujitsu Limited | Polishing pad, polishing apparatus having the same, and bonding apparatus |
| CN101100048A (en) * | 2006-07-03 | 2008-01-09 | 三芳化学工业股份有限公司 | Grinding cushion with surface texture |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110352115A (en) * | 2017-03-06 | 2019-10-18 | 应用材料公司 | It is mobile for the spiral and concentric circles of the position CMP particular abrasive (LSP) design |
| CN107253131A (en) * | 2017-07-31 | 2017-10-17 | 深圳市汉匠自动化科技有限公司 | A kind of 3D screens grinder |
| CN112171504A (en) * | 2020-09-30 | 2021-01-05 | 李善龙 | Wafer etching back grinding machine |
| CN112171504B (en) * | 2020-09-30 | 2021-08-10 | 车艾建 | Wafer etching back grinding machine |
| USD1022364S1 (en) | 2022-06-03 | 2024-04-09 | Entegris, Inc. | Polyvinyl alcohol pad |
| USD1027345S1 (en) | 2022-06-03 | 2024-05-14 | Entegris, Inc. | Polyvinyl alcohol pad |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102399064B1 (en) | 2022-05-16 |
| JP2017522733A (en) | 2017-08-10 |
| WO2016010866A1 (en) | 2016-01-21 |
| KR20170032325A (en) | 2017-03-22 |
| CN106463383B (en) | 2020-10-16 |
| JP6955592B2 (en) | 2021-10-27 |
| CN112123196A (en) | 2020-12-25 |
| JP2020092276A (en) | 2020-06-11 |
| CN112123196B (en) | 2023-05-30 |
| TWI692385B (en) | 2020-05-01 |
| TW201609313A (en) | 2016-03-16 |
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