CN102884612B - Pressure controlled polishing platen - Google Patents
Pressure controlled polishing platen Download PDFInfo
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- CN102884612B CN102884612B CN201180010227.9A CN201180010227A CN102884612B CN 102884612 B CN102884612 B CN 102884612B CN 201180010227 A CN201180010227 A CN 201180010227A CN 102884612 B CN102884612 B CN 102884612B
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- pressure
- pad
- pressing plate
- polishing pad
- applicator
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- 238000005498 polishing Methods 0.000 title claims abstract description 109
- 238000003825 pressing Methods 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 40
- 239000012530 fluid Substances 0.000 claims description 32
- 239000012528 membrane Substances 0.000 claims description 24
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 24
- 239000000758 substrate Substances 0.000 abstract description 102
- 238000000034 method Methods 0.000 abstract description 29
- 238000007517 polishing process Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 12
- 230000033001 locomotion Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 239000004033 plastic Substances 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- 239000004734 Polyphenylene sulfide Substances 0.000 description 4
- 230000003321 amplification Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 229920000069 polyphenylene sulfide Polymers 0.000 description 4
- -1 Merlon Polymers 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 3
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 229920001903 high density polyethylene Polymers 0.000 description 3
- 239000004700 high-density polyethylene Substances 0.000 description 3
- 229920002530 polyetherether ketone Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229950000845 politef Drugs 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 241001597008 Nomeidae Species 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 231100000289 photo-effect Toxicity 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229920000785 ultra high molecular weight polyethylene Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A method and apparatus for controlling pressure or forces applied to a substrate in a polishing process is described. In one embodiment, a polishing system is described. The system includes a platen rotatably disposed on a base, the platen having a sidewall and a polishing pad disposed thereon forming an interior volume, and a pad pressure applicator disposed in the interior volume of the platen adjacent the underside of the polishing pad.
Description
Technical field
Embodiments of the present invention relate generally to photopolymer substrate, such as semiconductor crystal wafer.More specifically, the reality of the present invention
The mode of applying is related to change during glossing and puts on or act on the power on substrate.
Background technology
Chemically-mechanicapolish polish as being usually used in manufacturing a kind of technique of high density integrated circuit, with by there is polishing fluid
Move the feature side contacting substrate with polishing pad simultaneously, that is, deposit receiving surface, to planarize or light deposition is on substrate
Material layer.In typical glossing, substrate is maintained in rubbing head, described rubbing head promotes towards polishing medium or presses
Substrate backside.Material is removed from the feature side of the substrate being contacted with polishing medium with the combination of mechanism by chemistry.
The rigidity of substrate is being provided as from the feature side of substrate successfully and equably removes and contacts necessary to material
To important function.Putting on the drastically change of substrate backside pressure is preferable for contribute to uniform material removing sometimes.
However, the rigidity of substrate is tended to redistribute the pressure putting on substrate, so that can spread or smooth putting on substrate
Pressure.In some instances, it is undesirable that described smoothing effect, and described smoothing effect may produce on substrate bad
Light result.
Accordingly, it would be desirable to a kind of contribute to focusing on, high-resolution controls and puts on the pressure of substrate or power to contribute to from base
The method and apparatus that the feature side of plate removes material.
Content of the invention
Present invention offer is a kind of to put on the pressure of substrate and the method and apparatus of power for controlling in glossing.?
In one embodiment, a kind of photosystem is described.System includes the pressing plate being rotatably disposed within pedestal and pad pressure is applied
Plus device, described pressing plate has side wall and is fixed to the polishing pad of pressing plate to form internal volume in pressing plate periphery, described pad pressure
Applicator is arranged in the internal volume of pressing plate on the downside of neighbouring described polishing pad.
In another embodiment, provide a kind of photosystem.System includes the pressing plate being rotatably disposed within pedestal
With pad pressure applicator, described pressing plate has side wall and is fixed to the polishing pad of pressing plate to form internal volume in pressing plate periphery,
Described pad pressure applicator is arranged in the internal volume of pressing plate on the downside of neighbouring polishing pad, and described pad pressure applicator comprises rigidity
Sheet material or flexible membrane.
In another embodiment, provide a kind of method of photopolymer substrate.Methods described includes using to be applied from first pressure
Plus device applies to promote substrate against the first surface of polishing pad to the first pressure of substrate backside, and pass through the second of polishing pad
Surface applies second pressure to the feature side of substrate.
In another embodiment, provide a kind of method of photopolymer substrate.Methods described includes:Substrate is maintained at
In the carrier head with respect to polishing pad moving substrate, described carrier head has with substrate moveable first pressure applicator,
Described first pressure applicator has one or more pressure spans applying pressure to substrate first side, with respect to the of polishing pad
Side is to scan pattern moving substrate, and when substrate is to scan pattern movement, back pressure is transmitted from second pressure applicator
To the second side of substrate, described second pressure applicator is arranged on the second side of polishing pad.
Brief description
Therefore, in the way of the features described above structure that the present invention can be understood in detail, may be referred to embodiment and obtain above
The present invention of brief overview is discussed in greater detail, and some of them embodiment is illustrated in accompanying drawing.However, it should be noted that accompanying drawing is only
The exemplary embodiment of the diagram present invention, and therefore drawings are not to be considered as the restriction to scope, because the present invention can
To allow other equally effective embodiments.
Fig. 1 is the phantom of an embodiment for the treatment of stations.
Fig. 2A is the schematical sections sectional view of another embodiment for the treatment of stations.
Fig. 2 B is that the figure of the pressure applying to substrate backside represents.
Fig. 2 C is that the figure redistributing pressure on substrate represents.
Fig. 3 is the diagrammatic top view of an embodiment for the treatment of stations.
Fig. 4 A be have with asymmetrical stress region pad pressure applicator treating stations another embodiment etc.
Angle top view.
Fig. 4 B is the isogonism of another embodiment of the treating stations with the pad pressure applicator with symmetric pressure region
Top view.
Fig. 4 C is the isometric cross-sectional view of the treating stations being illustrated in Fig. 4 A and Fig. 4 B.
Fig. 5 A is the schematic sectional view of another embodiment of pad pressure applicator.
Fig. 5 B is the schematic sectional view of another embodiment of pad pressure applicator.
Fig. 6 A is the isometric plan view of another embodiment for the treatment of stations.
Fig. 6 B is that the isogonism of the embodiment of the first pad pressure applicator in the treating stations can be used in Fig. 6 A cuts open
View.
Fig. 7 A is that the isogonism of the embodiment of annular slab in the first pad pressure applicator can be used in Fig. 6 A regards
Figure.
Fig. 7 B is the amplification view of the first pad pressure applicator of Fig. 6 B.
Fig. 7 C is the amplification view of the ring of Fig. 7 B.
The schematic plan view of another embodiment that Fig. 8 arranges for ring-type actuator.
Fig. 9 is the flow chart of an embodiment of graphic technique.
Figure 10 is the flow chart of another embodiment of graphic technique.
In order to make it easy to understand, in the conceived case, represent that all figures are shared using identical component symbol identical
Element.It is contemplated that disclosed element can be advantageously used in it in the case of without specific narration in one embodiment
His embodiment.
Specific embodiment
Fig. 1 is the phantom of an embodiment for the treatment of stations 100, and described treating stations 100 are arranged to execute throwing
Light technique, such as chemically-mechanicapolish polishes (chemical mechanical polishing;CMP) technique or electrochemical machinery are thrown
Light (electrochemical mechanical polishing;ECMP) technique.Treating stations 100 can be separate unit or larger
A part for processing system.Be suitably adapted for the larger process system using treating stations 100 example include can from positioned at the U.S. plus
Li Funiya state Santa Clara (Santa Clara, California) Applied Materials (Applied Materials,
Inc.) obtain GTTM、MIRRALight
System, and other optoelectronic systems.
Treating stations 100 include pressing plate 105, and pressing plate 105 is pivotally supported on pedestal 110.Pressing plate 105 operationally coupling
It is connected to drive motor 115, drive motor 115 is suitable for around rotary shaft A rotary pressure plate 105.Pressing plate 105 supports by polishing material
The polishing pad 120 that 122 make.In one embodiment, the polishing material 122 of polishing pad 120 is commercially available cushion material, such as
It is typically used in the cushion material based on polymer in CMP.Polymeric material can for polyurethanes, Merlon,
Fluoropolymer, politef (PTFE), polyphenylene sulfide (PPS), or the combination of above-mentioned material.Polishing material 122 can enter one
Step comprises the perforate compatible with processing chemical technology or closed-cell foam polymer, elastomer, felt, the felt of dipping, plastics, and
Similar material.In another embodiment, polishing material 122 is the felt materials with porous coating dipping.In other embodiment party
In formula, polishing material 122 includes at least partly conductive material.
Carrier head 130 is arranged on the process surface 125 of polishing pad 120.Rubbing head 130 keeps substrate during processing
135, and rubbing head 130 controllably by substrate 135 towards polishing pad 120 process surface 125(Along Z axis)Promote.Pressing plate 105
Comprise to pad pressure applicator 138(With dotted line diagram), pad the downside that pressure applicator 138 applies pressure to polishing pad 120.Carrier
130 are attached to supporting member 140, supporting member 140 supporting carrier 130 and supporting member 140 contributes to carrier head 130 phase
Motion for polishing pad 120.Supporting member 140 may be coupled to pedestal 110, or carrier head 130 can be hanged by supporting member 140
The mode being hung on polishing pad 120 top is arranged on treating stations 100.In one embodiment, supporting member 140 is to install
Circuit orbit on treating stations 100.Carrier head 130 is coupled to drive system 145, and drive system 145 provides carrier head 130
At least rotary motion around rotary shaft B.Drive system 145 may also be arranged to respect to polishing pad 120 along supporting member
140 laterally(X-axis and/or Y-axis)Mobile carrier head 130.In one embodiment, in addition to transverse movement, drive system
145 with respect to polishing pad 120 vertically(Z axis)Mobile carrier head 130.For example, except offer substrate 135 is with respect to polishing pad 120
Rotation and/or transverse movement outside, be also with drive system 145 towards polishing pad 120 moving substrate 135.Carrier head 130
Transverse movement can be linear motion, arcuate movement or swing.
Adjusting means 150 and fluid applicator 155 are illustrated as being positioned on the process surface 125 of polishing pad 120.Adjust
Device 150 is coupled to pedestal 110, and adjusting means 150 includes actuator 185, and actuator 185 is suitably adapted for rotation adjustment device
150, or the mobile adjusting means 150 in one or more rectilinear directions with respect to polishing pad 120 and/or pedestal 110.Fluid applies
Device 155 includes one or more nozzles 160, and one or more nozzles 160 are suitable for being transferred to polishing fluid one of polishing pad 120
Point.Fluid applicator 155 is rotatably coupled to pedestal 110.In one embodiment, fluid applicator 155 is suitable for enclosing
Around the rotation of rotary shaft C, and fluid applicator 155 provides and is directed to the polishing fluid processing surface 125.Polishing fluid can be chemical solution
Liquid, water, polishing agent, cleanout fluid, or the combination of aforesaid liquid.
Fig. 2A is the schematical sections sectional view of another embodiment for the treatment of stations 200, and treating stations 200 have carrier head 130
With the polishing pad 120 being arranged on pressing plate 105(With dotted line diagram).Carrier head 130 is illustrated as having and is arranged in carrier head 130
Substrate 135 so that the feature side of substrate 135 is contacted with the process surface 125 of polishing pad 120.Carrier head 130 includes clasp
205, clasp 205 restricting substrate 135 and prevent substrate 135 from skidding off from carrier head 130 during processing.Carrier head 130 includes
Flexible membrane 210, the backside contact of flexible membrane 210 and substrate 135.In one embodiment, carrier head 130 includes main body 215,
Main body 215 comprises carrier head pressure applicator 220, and carrier head pressure applicator 220 applies pressure or power to flexible membrane 210.Make
Power for flexible membrane 210 is transferred to the dorsal part of substrate 135, promotes substrate with the process surface 125 towards polishing pad 120
The region 225A of 135 feature side to region 225B.
In one embodiment, carrier head pressure applicator 220 includes one or more bladders 230, one or more capsules
Shape thing 230 is coupled to fluid supply machine 235.Fluid supply machine 235 selectively provides gas or liquid to each bladder
230, to apply pressure to flexible membrane 210.Flexible membrane 210 deflection is to apply force to the dorsal part of substrate 135.Put on bladder
230 pressure can differ and can be in response to the uniformity or non-homogeneous at rigid, desired center to the edge of such as substrate 135
The factor of property etc, and other factors and select.In one embodiment, put on the pressure of bladder 230 about -10
Pound/square inch (pounds per square inch;Psi) to about 90psi, for example, in about -10psi to about 80psi
Between.
The rigidity of substrate 135 is tended to redistribute the power from flexible membrane 210.For example it may be desirable between bladder 230
Well-defined pressure boundary produces required center to edge uniformity, as shown shown in the curve chart in Fig. 2 B.For example,
May want to apply more pressure the central area 225A to substrate 135 and apply less pressure to the marginal area of substrate 135
225B(For example, substrate 135 periphery inwardly about 10mm to about 20mm), or vice versa as the same, and may want to these regions it
Between there is abrupt pressure border.However, the rigidity of substrate 135 is tended to smooth these desired abrupt pressure borders, such as scheme
Shown in chart in 2C.As a result, the feature side experience smoothed pressure effect of substrate 135 is so that central area 225A may be for filling
Ground light marginal area 225B is divided to be polished by crossing.The alternative result of smoothed pressure effect is that marginal area 225B may be for filling
Light splitting central area 225A and by deficient polishing.Smooth pressure boundary produces difficult in terms of controlling optical uniformity.Smooth
Pressure boundary afterwards can negatively affect light, and smooth after pressure boundary and the tuning of the edge contour of restricting substrate 135.
Similar to embodiment illustrated in Fig. 1, treating stations 200 include the pad pressure applicator being encapsulated in pressing plate 105
138.In one embodiment, pad pressure applicator 138 include one or more pressure sources 240, one or more pressure sources 240 from
Pressure supply 260 transmission liquid or gas, liquid or gas form FDB 245.Available FDB 245 is independently
Apply pressure to the discontinuity zone of polishing pad 120 downside.In an example, pad pressure applicator 138 includes cover plate 250,
Described cover plate 250 is coupled to the shell 255 containing pressure source 240.Pressure source 240 is adapted to provide for multiple pressure spans, can be only
The plurality of pressure span of Site control is to apply predetermined pressure to each region defined by pressure source 240.Implement at one
In mode, pressure source 240 may include bladder, baffle plate, plenum portion or chamber, and described chamber is by separating pressure source 240
Side wall is formed.Pressure source 240 can form pressure span, and described pressure span is with one heart and/or symmetrical or non-concentric and/or non-right
Claim.In one embodiment, pressure source 240 and the pressure supply 260 being coupled to controller are in fluid communication.Various valves(Not
Diagram)Be coupled between pressure supply 260 and each pressure source 240, with control put on pressure source 240 fluid and/or
Pressure.
In one embodiment, cover plate 250 comprises the porous plate with multiple nozzles 265, and multiple nozzles 265 are suitable for
Fluid is directed to the downside 270 of polishing pad 120 from shell 255.Each pressure source 240 is fluidly coupled to one or more nozzles
265, to provide FDB 245 between the downside 270 of cover plate 250 and polishing pad 120.In this embodiment, pressure supplies
Device 260 is answered to comprise fluid, such as gas or liquid.In one embodiment, pressure supply 260 comprises compressed gas, all
As air, nitrogen, helium, argon, the derivant of above-mentioned gas and above-mentioned gas combination.In another embodiment, pressure
Supply 260 comprises liquid, such as deionized water.Fluid can leave the inside of pressing plate 105 by opening 262, and opening 262 is formed
In the wall of pressing plate 105.In one embodiment, pedestal 110 may include drain port 264, and drain port 264 is suitable for leaving when fluid
Fluid is received during pressing plate 105.
Can independently controlled each pressure source 240 to provide the fluid of pressurization to the downside 270 of polishing pad 120.At some
In embodiment, pressing plate 105 may include the flexible backings 275 between the downside 270 of polishing pad 120.Flexible backings 275 can be
Flexible board or flexible membrane, described flexible board or flexible membrane are suitable for covering pressing plate 105 and preventing polishing fluid from entering the interior of pressing plate 105
Portion's volume 278.In one embodiment, flexible backings 275 are to have the fiber/plastic composite of low-friction coefficient and soft
Property backing 275 includes about 10 Mills to the thickness of about 20 Mills.In an aspect, flexible backings 275 comprise byThe PEEK material that fiber is strengthened.Available flexible backings 275 enter pressing plate 105 to prevent liquid and polishing fragment
Internal volume 278.In addition it is also possible to use the pressure that flexible backings 275 control the downside 270 applying to polishing pad 120.One
In individual embodiment, flexible backings 275 are passed through multiple clamps or tensioner 280 is coupled to the periphery of pressing plate 105, described many
Individual clamp or tensioner 280 are suitable for launching flexible backings 275 and contributing to fastening on pressing plate 105 for the flexible backings 275.
One or more tensioners 280 can be configured to unclamp clamp, the described clamp that unclamps has the spiral shell being coupled to described clamp
Screw thread, spring or other tension force apply component.
In one embodiment, pad pressure applicator 138 is coupled to pedestal 110 so that padding pressure applicator 138
Fixing with respect to pedestal 110.In another embodiment, pad pressure applicator 138 may move with respect to pedestal 110.At one
In embodiment, the shell 255 of pad pressure applicator 138 is coupled to actuator 285, actuator 285 is suitable for respect to base
Seat 110 mobile shells 255.Actuator 285 is suitable for respect to pedestal 110 at least horizontal(I.e., flatly)Side moves up
Pad pressure applicator 138, with mat pressure applicator 138 can with the substrate 135 identical direction being maintained in carrier head 130
Mobile.In another embodiment, actuator 285 can be configured to by pad pressure applicator 138 towards and away from(I.e., vertically
Ground)The downside 270 of polishing pad 120 is mobile.
In one embodiment, the Fluid pressure being applied to the downside 270 of polishing pad 120 is about -10psi to about
10psi.Within pressure source 240 or the pressure between pressure source 240 can be constant or for interval.In an embodiment
In, carrier head 130 be set with across the process surface 125 of polishing pad 120 by scanning pattern laterally moving substrate 135.?
In this embodiment, in response to substrate 135 with respect to the position of pad pressure applicator 138, apply to the downside of polishing pad 120
270 pressure alterable.In another embodiment, pad pressure applicator 138 is set with by scanning pattern and substrate 135 1
Rise and move.In this embodiment, when substrate 135 and pad pressure applicator 138 are to scan pattern movement, it is applied to polishing pad
The pressure alterable or invariable of 120 downside 270.
Fig. 3 is the diagrammatic top view of an embodiment for the treatment of stations 300, and described top view diagram substrate 135 is in polishing
Light on pad 120 scans the embodiment of pattern 305.Substrate 135 is maintained at carrier head 130(Fig. 1)In, for clarity
And carrier head 130 not shown.Carrier head point-blank or with across process surface 125 camber line moving substrate 135, simultaneously with respect to
Rotating polishing pad 120 rotary plate 135 is to realize the removal from substrate 135 for the material.Also show the regulation dress with adjustment disk 310
Put 150 embodiments scanning pattern 315 with the regulation illustrating on the polishing pad 120.By adjustment disk 310 across process table
Face 125 and scan with adjust and/or refresh process surface 125, thus contributing to the clearance from substrate 135 for the reinforcing material.
Treating stations 300 are included under polishing pad 120 with the first pad pressure applicator 325A of dotted line diagram.As this paper institute
State, can be similar to pad pressure applicator 138 ground configuration the first pad pressure applicator 325A.In one embodiment, the first pad
Pressure applicator 325A includes defining the size of an area, and described area is more than the area of substrate 135.First pad pressure applicator
It is to scan pattern 305 more than the substrate on polishing pad that the area of 325A may also be arranged size.In an aspect, the first pad
The shape of pressure applicator 325A is general oval in plan view, and described shape has major axis or axis, described major axis
Scan length axle or the longer axis aligned in general of pattern 305 with axis and polishing.In one embodiment, the first pad pressure is applied
Plus device 325A shape in plan view comprises the minor diameter more than substrate 135 diameter or short axle, and at least above 135 liang of substrate
Major diameter again or major axis.For example, for the substrate of 300mm, minor diameter or short axle be about 310mm to about 380mm, and major diameter
Or major axis is about 310mm to about 760mm.
In one embodiment, treating stations 300 are additionally included under polishing pad 120 with the second pad pressure of dotted line diagram
Applicator 325B, the second pad pressure applicator 325B is adjacent with adjustment disk 310.As described herein, can be similar to pad pressure applying
Device 138 configuration the second pad pressure applicator 325B, and the second pad pressure applicator 325B can be configured to apply pressure to regulation
Disk 310 is across the downside of the polishing pad 120 processing surface 125 movement.Second pad pressure applicator 325B may also include defining surface
Long-pending size, described size is more than the size of adjustment disk 310.Also can the second pad pressure applicator 325B area configured big
The little size being to scan pattern 315 more than regulation.
Fig. 4 A is the isometric plan view of another embodiment for the treatment of stations 400.Treating stations 400 include pressing plate 105, pressing plate
105 are rotatably disposed within pedestal 110.In order to illustrate the first pad pressure applicator being encapsulated within internal volume 405
The details of one embodiment of 325A and second pad pressure applicator 325B, carrier head not shown and polishing on pressing plate 105
Pad, the downside 270 of the side wall 409 by pressing plate 105 for the described internal volume 405 and polishing pad 120(Do not show)Defined.At one
In embodiment, the first pad pressure applicator 325A and the second pad pressure applicator 325B are coupled to fixed pedestal 407.Fixed base
Seat 407 is coupled to pedestal 110 by the opening 415 of pressing plate 105 bottom.Fixed pedestal 407 allows the first pad pressure applicator
325A and second pad pressure applicator 325B is rigidly coupled to pedestal 110, allows with respect to the first pad pressure applicator simultaneously
325A and second pad pressure applicator 325B rotary pressure plate 105.
First pad pressure applicator 325A includes the cover plate 250 being arranged on shell 255.Shell 255 comprises with dashed line view
One or more pressure spans showing are as center pressure region 440A and one or more rim pressure regions 440B to 440E.Each
Pressure span 440A to 440E can the pressure source 240 described in Fig. 2A be formed.In one embodiment, by carrier head
130(Fig. 2A)Apply first pressure to substrate backside, and the first pad pressure applicator 325A applies the second pressure by polishing pad 120
Power to substrate feature side.In an aspect, can configure each pressure span 440A to 440E to provide time pressure to polishing
The downside of pad.In one embodiment, center pressure region 440A can be configured to provide first time pressure to polishing pad
Downside, and can be by one or more rim pressure regions 440B to 440E configuration to provide second pressure to the downside of polishing pad.
First time pressure can be identical or different with second pressure.In one embodiment, first time pressure is more than second pressure
With than substrate periphery apply bigger pressure to substrate center, or vice versa as the same.
In this embodiment, pressure span 440A to 440E is asymmetric, so that being applied on the downside of polishing pad
Pressure is different, and produces transition region in the neighbouring region contacting with pressure span 440A to 440E or being in fluid communication.
In an example, transition region is the adjacent boundary of pressure span 440A to 440E.In one embodiment, the first pad pressure
Applicator 325A includes being not added with nip 410.In one embodiment, it is not added with the region that nip 410 comprises cover plate 250, described
Region is not contacted with pressure span 440A to 440E or is in fluid communication.Can be using being not added with nip 410 and offset leading to substrate
135 photo effects crossing polishing.In an example, can be using being not added with the mistake that nip 410 prevents or minimizes substrate 135
Light, the trailing edge that described light excessively may work as rotary plate 135 occurs when first pads on pressure applicator 325A.In another reality
Apply in mode, can reduce or remove and be not added with nip 410, and the pressure in the 440A to 440E of one or more pressure spans can be reduced
Power is with the light excessively of offset substrate 135.In one embodiment, can be by the pressure in the 440A to 440E of one or more pressure spans
Power is reduced to vacuum(That is, about -10psi)Light excessively with offset substrate 135.
In one embodiment, similar to the pad pressure applicator 138 described in Fig. 2A, the second pad pressure applicator
325B includes cover plate 417 and shell 420.Shell 420 can comprise pressure span 430, and described pressure span 430 is by being described in Fig. 2A
In pressure source 240 formed.Although only illustrating a pressure span 430, extra pressure region can be utilized.Pressure span
430 are suitable for applying pressure to adjustment disk 310 on the downside of the polishing pad that polishing pad scans.Cover plate 417 can be similar to cover plate
250, and cover plate 417 can perforated, and be suitable for contact with the downside of polishing pad, and the combination of above-mentioned situation be to apply pressure to polishing
On the downside of pad.
Fig. 4 B is the isometric plan view of another embodiment for the treatment of stations 400, and described embodiment is similar to being illustrated in figure
Embodiment in 4A, difference is symmetrical or concentric pressure zones 440A in the first pad pressure applicator 325 extremely
440E.In this embodiment, remove and be not added with nip 410(Fig. 4 A), and can reduce in one or more pressure spans 440A extremely
Pressure in 440E is with the light excessively of offset substrate 135.
Fig. 4 C is the isometric cross-sectional view of the treating stations 400 being illustrated in Fig. 4 A and Fig. 4 B.In this view not shown second
Pad pressure applicator 325B, therefore can see that the details of the interface between pedestal 110 and pressing plate 105.In one aspect
In, polishing pad 120 is circular or ring-type.The periphery of polishing pad 120 is coupled to pressing plate 105, to demarcate the one of internal volume 405
Side.In one embodiment, pressing plate 105 is coupled to motor 115 by gear mechanism 450.First pad pressure applicator 325A
Pedestal 110 is coupled to by opening 415, and the first pad pressure applicator 325A is not to disturb gear mechanism 450 and/or pressing plate
The mode of 105 rotation deviates gear mechanism 450.In another embodiment, the first pad pressure applicator 325A can be by causing
Dynamic device(The actuator 285 of diagram in such as Fig. 2A)It is removably coupled to pedestal 110.
Fig. 5 A is the schematic sectional view of another embodiment of pad pressure applicator 500, and described pad pressure applicator 500 can
Using in the treating stations 100 of Fig. 1 or the first pad pressure applicator 325A of Fig. 4 A and Fig. 4 B and the second pad pressure applicator 325B
In any one in.In this embodiment, pad pressure applicator 500 includes bearing surface 505, and bearing surface 505 comprises multiple
Contact bearing 510, multiple contact bearings 510 are suitable for contact with the downside 270 of polishing pad 120.Each contact bearing 510 can comprise
The group of the jut that stretches out from bearing surface 505, the roller element stretching out from bearing surface 505 and above-mentioned jut and roller element
Close.In one embodiment, contact bearing 510 is the jut of bearing surface 505 or raised areas, and contact bearing 510 by
The material with low-friction coefficient is made or contact bearing 510 includes the material with low-friction coefficient.In an embodiment
In, contact bearing 510 comprises the roller element being at least partially recessed in depression 515, and depression 515 is arranged in pad pressure and applies
In the cover plate 250 of device 500.Each roller element is made up of the material with low-friction coefficient or each roller element includes having
The material of low-friction coefficient.
In one embodiment, the shell 255 of pad pressure applicator 500 includes one or more bladders 520, and one or many
Individual bladder 520 is coupled to pressure supply 260, and pressure supply 260 is suitable for applying force to bearing surface 505 and/or contact
Bearing 510.Independently controlled can send the pressure of each bladder 520 to provide controlled power to contact bearing 510 and extremely
The downside 270 of polishing pad 120.In one embodiment, the pressure applying the fluid to bladder 520 is about -10psi to about
10psi.
Fig. 5 B is the schematic sectional view of another embodiment of pad pressure applicator 525, and pad pressure applicator 525 can be utilized
In the treating stations 100 of Fig. 1 or the first pad pressure applicator 325A of Fig. 4 A and Fig. 4 B and the second pad pressure applicator 325B
In any one.In this embodiment, pad pressure applicator 500 includes contact surface 530, and contact surface 530 is suitable for contact with throwing
A part for the downside 270 of light pad 120.Contact surface 530 comprises flexible membrane 535, and flexible membrane 535 is arranged in pad pressure applicator
In 525 shell 255.Flexible membrane 535 may be arranged at the cover plate 250 of pad pressure applicator 500(Do not show)Go up or flexible membrane 535
Cover plate 250 can be replaced.Flexible membrane 535 is suitable for contact with the downside 270 of polishing pad 120.Flexible membrane 535 can be by having low friction system
The material of number is made, described material such as fluoropolymer, politef (PTFE), high density polyethylene (HDPE) (HDPE), superelevation
Molecular weight (UHMW) plastics, polyphenylene sulfide (PPS), or the combination of above-mentioned material.
In one embodiment, the shell 255 of pad pressure applicator 500 includes one or more chambers 540, one or more
Chamber 540 is coupled to pressure supply 260, and pressure supply 260 is suitable for applying force to flexible membrane 535.Can be independently controlled
Send the pressure of each chamber 540 downside 270 to provide controlled power to flexible membrane 535 and to polishing pad 120 to.At one
In embodiment, the pressure applying the fluid to chamber 540 is about -10psi to about 10psi.
Fig. 6 A is the isometric plan view of another embodiment for the treatment of stations 600, and treating stations 600 have the first pad pressure and apply
Another embodiment of device 625A.For simplicity will not repeat in treating stations 600 similar to being shown in Fig. 4 A and Fig. 4 B
In the embodiment for the treatment of stations 400 element.In this embodiment, the first pad pressure applicator 625A includes multiple rings
605th, 610 and 615, multiple rings 605,610 and 615 are movably disposed within cover plate 250 and multiple ring 605,610 and 615
Spread within the 440A to 440C of one or more pressure spans.In one embodiment, in multiple rings 605,610 and 615
One or more rings are semi-flexible ring, and described semi-flexible ring can be independently within the cover plate 250 of the first pad pressure applicator 625A
Mobile.
Fig. 6 B is an embodiment of the first pad pressure applicator 625A in the treating stations 600 can be used in Fig. 6 A
Isometric cross-sectional view.In this embodiment, the first pad pressure applicator 625A includes internal pressure region 620A, intermediate pressure zone
Domain 620B, the first external pressure region 620C and the second external pressure region 620D.Internal pressure region 620A, intermediate pressure zone
Each of domain 620B, the first external pressure region 620C and the second external pressure region 620D are coupled to independent by controller
One or more source of pressurised fluid controlling.
In one embodiment, internal pressure region 620A comprises dual zone air bearing, and described dual zone is empty
Gas bearing has the independently-controlled secondary interior zone 626A and time perimeter 626B.Secondary interior zone 626A includes the first inflation
Plenum 630A, the first plenum portion 630A is coupled to pressure supply 260 by conduit 635A, and secondary perimeter 626B
Pressure supply 260 is coupled to by one or more conduits 635B.In one embodiment, the first plenum portion 630A with
Multiple openings 632 connect, and secondary perimeter 626B comprises passage 634.Pressure fluid flows to passage from pressure supply 260
634 and/or the first plenum portion 630A, at the first plenum portion 630A, pressure fluid passes through opening 632 and passage
634 discharge from cover plate 250.
Intermediate pressure region 620B comprises the second plenum portion 630B, and the second plenum portion 630B passes through conduit 635C
It is coupled to pressure supply 260.Second external pressure region 620D comprises the 3rd plenum portion 630C, the 3rd plenum portion
630C is coupled to pressure supply 260 by conduit 635D.Flow to plenum portion 630B from the fluid of pressure supply 260
And 630C, and flow through the opening 632 in cover plate 250.In one embodiment, internal pressure region 620A and intermediate pressure zone
Domain 620B is to the central area 225A of substrate(Fig. 2A)Back pressure is provided, and the first external pressure region 620C is to the Zhou Bianqu of substrate
Domain 225B(Fig. 2A)Back pressure is provided.In an aspect, the first external pressure region 620C is positioned at the periphery of substrate, and second
The configured size of external pressure region 620D and position with to carrier head 130 clasp 205 provide back pressure(Clasp 205 and carrier
130 both of which are illustrated in Fig. 2A).
In this embodiment, the first external pressure region 620C comprises one or more rings 605,610 and 615.At one
In embodiment, the first external pressure region 620C is positioned on cover plate 250 with corresponding to substrate periphery.In an aspect,
A diameter of about 280mm to about 320mm of the first external pressure region 620C, such as about 290mm to about 310mm.Implement at one
In mode, one of ring 605 to 615 ring comprises the diameter of about 300mm, and other rings are concentric and other rings include being slightly larger than
Or the diameter less than 300mm.Each ring in ring 605,610 and 615 is coupled to one or more actuators independently controlled
640.In one embodiment, each actuator 640 includes piston 645, and piston 645 is suitable for applying with respect to the first pad pressure
Plus the pedestal 650 of device 625A is selectively raised and lowered.
Fig. 7 A is an embodiment of the annular slab 655 in the first pad pressure applicator 625A can be used in Fig. 6 A
Isometric view.Annular slab 655 is included the rigid element 660A on footpath, and rigid element 660A is coupled to the first pad pressure and applies
The pedestal 650 of device 625A.Rigid element 660A includes hole 700, and hole 700 is used for being attached to the base of the first pad pressure applicator 625A
Seat 650.Annular slab 655 is additionally included in the flexible portion 660B on the external diameter of annular slab 655.Form groove 705 in annular slab 655
To separate rigid element 660A with flexible portion 660B at least in part, and connecting material 710 is allowed to form movable spring.Ring
Shape plate 655 can be by plastic material or such as stainless metal material manufacture.
Fig. 7 B is the amplification view of the first pad pressure applicator 625A of Fig. 6 B.Piston 645 is suitable for contact with annular slab
655 flexible portion 660B.Flexible portion 660B is suitable for the bending when having from the pressure of piston 645, and contact is coupled to
The leg 665A to 665C of each ring 605 to 615.
Fig. 7 C is the amplification view of the ring 605 to 615 of Fig. 7 B.In an embodiment of ring-type actuator arrangement,
Each ring 605 to 615 includes leg 665A to 665C, and leg 665A to 665C is suitable for engagement with the flexible portion of annular slab 655
The desired zone of 660B.Each leg 665A to 665C is positioned with respect to flexible portion 660B, so that flexible portion 660B
Engagement contact specific leg 665A, 665B or 665C, and do not contact another leg, thus allow to activate respectively ring 605 to
615.In an aspect, each leg 665A to 665C being shaped and/or interlocks is to be spaced apart with another leg, to prevent from working as
During actuating, flexible portion 660B contacts more than one leg.Each leg 665A to 665C can be by rigid metallic material or plastics material
Material manufactures.
Each ring 605 to 615 includes supporting the circular passage 670 of compressible member 675.Circular passage 670 can be by rigidity
Plastics or metal are made.Circular passage 670 includes a structure and/or thickness, and described structure and/or thickness are compressible member
675 provide rigid or rigid backing.In one embodiment, circular passage 670 is manufactured by stainless steel material.Compressible member
675 are suitable for contact with polishing pad(Not shown)Downside, and by configured for compressible member 675 size and shape to prevent from polishing
Pad contact between circular passage 670.In one embodiment, circular passage includes C-shaped or U-shaped cross-section, and can press
Contracting component 675 includes T-shaped cross section, as shown in the figure.Compressible member 675 can be by the compressible material system with low-friction coefficient
Become, such as PEEK.PEEK material may also include the other materials of such as carbon fiber to form composite.
The schematic plan view of another embodiment for ring-type actuator arrangement 800 for the Fig. 8.In this embodiment, relatively
Schematically illustrate the position of piston 810A to 810C in ring 605 to 615.Each piston 810A to 810C is and Fig. 6 B and Fig. 6 C
The schematically illustrating of the piston 645 that actuator 640 couples.In an aspect, each ring 605 to 615 is aligned with three pistons, institute
State three pistons along ring to be substantially equidistantly spaced.For example, ring 605 is aligned with piston 810C, and ring 610 is aligned with piston 810B
And ring 615 is aligned with piston 810A.Each piston 810A to 810C independently can be activated to carry independent of other rings or piston
At least a portion for pressure to each ring.In one embodiment, each ring 605 to 615 is independent by three actuators
Ground activates.In one embodiment, each actuator in three actuators is half with respect to a ring and/or a ring
Footpath is spaced with about 120 degree of spacing.In another embodiment, each actuator is spaced and with one heart with about 40 degree of angle
Degree is spaced apart.In this embodiment, the annular slab 655 as described in Fig. 6 B and Fig. 6 C can be utilized in each ring 605 to 615
And piston 810A to 810C between.
Fig. 9 is the flow chart of an embodiment of graphic technique 900.At step 910, promote substrate 135 against throwing
The first surface of light pad 120(For example, process surface 125).In one embodiment, using from first pressure applicator
(For example, carrier head pressure applicator 220)At least first pressure promote substrate 135 against first surface, described first pressure
Applicator is connected with substrate backside.In an example, pressure is sent to one or many being arranged in first pressure applicator
Individual bladder 230, to provide pressure to the dorsal part of substrate 135.Bladder 230 can be independent of the marginal zone providing to substrate 135
The second pressure of domain 225B, provides first pressure to the central area 225A of substrate 135.First pressure can be identical with second pressure
Or it is different.In one embodiment, being applied to the first pressure of bladder 230 and second pressure is about -10psi to about
80psi.
At step 920, second pressure is sent to the feature side of substrate 135.Second pressure is from second pressure applicator
(For example, pad pressure applicator 138,325A, 500,525 or 625A)By the second surface transmission of polishing pad, described second pressure
Force applicator is arranged on the opposite side of polishing pad 120 with respect to substrate 135.Second pressure can be essentially equal to or different from the
One pressure.In one embodiment, second pressure applicator includes center pressure region 440A and one or more rim pressures
Region 440B to 440E.Center pressure region 440A and one or more rim pressure regions 440B to 440E can comprise pressure source
240, pressure source 240 comprises bladder or is formed at the discontinuous chamber in second pressure applicator.In one embodiment,
The pressure sending each pressure source 240 to includes providing respectively to center pressure region 440A and one or more rim pressure regions
At least the 3rd pressure of 440B to 440E and the 4th pressure.3rd pressure and the 4th pressure may be the same or different.Implement at one
In mode, being applied to the 3rd pressure of pressure source 240 and the 4th pressure is about -10psi to about 10psi.In another embodiment
In, in addition to the 620A to 620D of one or more pressure spans, second pressure carries also by one or more rings 605,610 and 615
For as described by Fig. 6 A to Fig. 6 C.
Figure 10 is the flow chart of another embodiment of graphic technique 1000.At step 1010, substrate 135 is maintained at
It is suitable in the carrier head 130 with respect to polishing pad 120 moving substrate 135.Carrier head 130 includes can moving together with substrate
First pressure applicator(For example, carrier head pressure applicator 220).In one embodiment, first pressure applicator includes
One or more can pressurised zone(For example, bladder 230), described one or more can apply pressure to substrate 135 by pressurised zone
First side(For example, dorsal part).In one embodiment, the pressure being applied to the first side of substrate is about -10psi to about
80psi.
At step 1020, by substrate 135 for example to scan the first side that pattern 305 is with respect to polishing pad 120(For example,
Process surface 125)Mobile.At step 1030, back pressure is sent to the second side of substrate 135(For example, feature side).Back pressure is
When substrate is to scan when pattern moves from the second side being arranged in polishing pad 120(For example, downside 270)On second pressure apply
Device(For example, pad pressure applicator 138,325A, 500,525 or 625A)There is provided.Therefore, when substrate 135 is across polishing pad 120
When mobile, the first pressure acting on the first side of substrate 135 can be compensated by second pressure.In one embodiment, second
Pressure applicator is fixing with respect to polishing pad 120.In another embodiment, second pressure applicator is with respect to polishing pad
120 is moveable.Back pressure can be essentially equal to or be different from first pressure.In one embodiment, back pressure can be about-
10psi to about 10psi.Back pressure can be the form of static force or air bearing.
The present invention describe a kind of in glossing control put on the pressure of substrate and the method and apparatus of power.This
Method and apparatus described in literary composition contributes to focusing, high-resolution controls pressure or the power being applied to substrate, so help to strengthening
Remove material from substrate.Equipment includes padding the embodiment party of pressure applicator 138,325A, 500,525 or 625A as described herein
Formula.The pressure side that can be experienced in glossing using pad pressure applicator 138,325A, 500,525 or 625A control base board
Boundary.Therefore, act on the pressure of substrate or power improve control contribute to bigger optical uniformity, enhanced clearance and
Enhanced profile tuning.Pad pressure applicator 138,325A, 500,525 or 625A are suitable for when substrate is to scan pattern movement
When, it is applied to the pressure between about -10psi to about 10psi.In this way, substrate is required along entirely scanning pattern experience
Back pressure.In addition, describing the second pad pressure applicator 325B for adjusting means.Second pad pressure applicator 325B can be with class
It is similar to pad pressure applicator 138, the mode of 325A, 500,525 or 625A constructs and operates.Can apply independent of from the second pad pressure
Plus device 325B is applied to the pressure of polishing pad 120, to control and to provide from pad pressure applicator 138,325A, 500,525 or 625A
Back pressure to polishing pad 120.
Although the above is for embodiments of the present invention, in the case of without departing substantially from scope of the invention,
Other and the further embodiment of the present invention can be designed.
Claims (17)
1. a kind of photosystem, comprises:
It is rotatably disposed within the pressing plate on pedestal, described pressing plate has side wall and is fixed to described pressing plate in described pressing plate periphery
Polishing pad to form internal volume;With
Pad pressure applicator, described pad pressure applicator is arranged in the described internal volume of described pressing plate neighbouring described polishing pad
Downside, described pad pressure applicator can with respect to the downside of described polishing pad by scan pattern move.
2. the system as claimed in claim 1 is it is characterised in that described pad pressure applicator comprises there is multiple perforation further
Sheet material, the plurality of perforation is suitable for guiding fluid to the downside of described polishing pad.
3. system as claimed in claim 2 is it is characterised in that the plurality of perforation is coupled to pressure source.
4. system as claimed in claim 3 is it is characterised in that described pressure source comprises one or more chambeies being arranged within the casing
Room.
5. the system as claimed in claim 1 it is characterised in that described pad pressure applicator to comprise one or more further concentric
Ring, one or more concentric rings described are suitable for contact with the downside of described polishing pad.
6. the system as claimed in claim 1 is it is characterised in that comprise further:It is suitable for contact with the downside of described polishing pad
Flexible membrane.
7. system as claimed in claim 6 is it is characterised in that described flexible membrane is coupled to institute by one or more tensioners
State the periphery of pressing plate.
8. system as claimed in claim 7 is it is characterised in that described pad pressure applicator is in described flexible membrane and described pad pressure
Air bearing is provided between force applicator.
9. system as claimed in claim 8 is it is characterised in that described air bearing comprises multiple laterally spaced pressure areas
Domain.
10. a kind of photosystem, comprises:
It is rotatably disposed within the pressing plate on pedestal, described pressing plate has side wall and is fixed to described pressing plate in described pressing plate periphery
Polishing pad to form internal volume;With
Pad pressure applicator, described pad pressure applicator is arranged in the described internal volume of described pressing plate neighbouring described polishing pad
Downside, described pad pressure applicator comprises rigid sheet material or flexible membrane and can be with respect to the downside of described polishing pad by scanning
Pattern moves.
11. systems as claimed in claim 10, it is characterised in that described rigid sheet material includes multiple perforation, the plurality of are worn
Hole is suitable for the downside to described polishing pad and guides fluid.
12. systems as claimed in claim 11 are it is characterised in that the plurality of perforation is coupled to pressure source.
13. systems as claimed in claim 12 are it is characterised in that described pressure source comprises one or more being arranged within the casing
Chamber.
14. systems as claimed in claim 10 are it is characterised in that described pad pressure applicator comprises one or more together further
Thimble, one or more concentric rings described are suitable for contact with the downside of described polishing pad.
15. systems as claimed in claim 10 are it is characterised in that described flexible membrane is coupled to by one or more tensioners
The periphery of described pressing plate.
16. systems as claimed in claim 10 are it is characterised in that described pad pressure applicator is in described flexible membrane and described pad
Air bearing is provided between pressure applicator.
17. systems as claimed in claim 16 are it is characterised in that described air bearing comprises multiple laterally spaced pressure areas
Domain.
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US201161429422P | 2011-01-03 | 2011-01-03 | |
US61/429,422 | 2011-01-03 | ||
PCT/US2011/064396 WO2012094102A2 (en) | 2011-01-03 | 2011-12-12 | Pressure controlled polishing platen |
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CN102884612A CN102884612A (en) | 2013-01-16 |
CN102884612B true CN102884612B (en) | 2017-02-15 |
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CN201180010227.9A Active CN102884612B (en) | 2011-01-03 | 2011-12-12 | Pressure controlled polishing platen |
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US (1) | US20120171933A1 (en) |
JP (1) | JP2014501455A (en) |
KR (1) | KR101941586B1 (en) |
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WO (1) | WO2012094102A2 (en) |
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2011
- 2011-12-12 KR KR1020127021056A patent/KR101941586B1/en active IP Right Grant
- 2011-12-12 CN CN201180010227.9A patent/CN102884612B/en active Active
- 2011-12-12 JP JP2013547510A patent/JP2014501455A/en active Pending
- 2011-12-12 WO PCT/US2011/064396 patent/WO2012094102A2/en active Application Filing
- 2011-12-13 US US13/324,285 patent/US20120171933A1/en not_active Abandoned
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CN101722464A (en) * | 2008-10-17 | 2010-06-09 | 罗门哈斯电子材料Cmp控股股份有限公司 | Chemical mechanical polishing pad having sealed window |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI821857B (en) * | 2021-02-17 | 2023-11-11 | 德商萊普瑪斯特沃斯特股份有限公司 | Double-side or one-side machine tool |
Also Published As
Publication number | Publication date |
---|---|
KR101941586B1 (en) | 2019-01-23 |
JP2014501455A (en) | 2014-01-20 |
CN102884612A (en) | 2013-01-16 |
KR20140001733A (en) | 2014-01-07 |
US20120171933A1 (en) | 2012-07-05 |
WO2012094102A2 (en) | 2012-07-12 |
WO2012094102A3 (en) | 2012-10-04 |
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