CN109732472A - Polissoir and method - Google Patents
Polissoir and method Download PDFInfo
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- CN109732472A CN109732472A CN201711047198.9A CN201711047198A CN109732472A CN 109732472 A CN109732472 A CN 109732472A CN 201711047198 A CN201711047198 A CN 201711047198A CN 109732472 A CN109732472 A CN 109732472A
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Abstract
It includes: catalysis grinding pad that the present invention, which provides a kind of polissoir and method, the polissoir, and surface includes catalyst；First rotating device is connected to catalysis grinding pad, and provides clockwise and two kinds of rotary powers counterclockwise for catalysis grinding pad；Wafer fixed disk, for fixing wafer to be ground, so that wafer to be ground is contacted with catalysis grinding pad；Second rotating device is connected to wafer fixed disk, provides rotary power for wafer fixed disk and wafer to be ground, and provides wafer to be ground and be catalyzed the pressure of grinding pad；And voltage device, for applying voltage for catalysis grinding pad and wafer to be ground.The present invention can substantially reduce the defect of the wafer to be ground or the generation of crackle, improve grinding quality.
Description
Technical field
The invention belongs to semiconductor manufacturing facility and method field of manufacturing, more particularly to a kind of polissoir and method.
Background technique
SiC material has compared with first generation semiconductor material (Ge and Si), second generation semiconductor material (GaAs, InP etc.)
There is superior characteristic, becomes third generation semiconductor material.SiC has excellent thermal conductivity simultaneously, is manufacture large scale, superelevation
The ideal substrate material of brightness white and blue light GaN LED and laser diode, become photovoltaic industry key basic material it
One.SiC semiconductor device performance with super strength and wide application prospect are paid much attention to by various countries all the time.
Ideal substrate material substrate quality requirement SiC wafer has surface ultra-smooth, not damaged, the high (Mohs of SiC hardness
Hardness 9.2~9.6) and extensive chemical stability (minimum atomic distance is 1.8A), so that it is difficult polishing, surface often goes out
Existing some scratches and damage, directly affect the quality of light emitting diode.The current developed Ultraprecise polished method of SiC wafer,
It mainly include chemical polishing, the polishing of catalyst assistant chemical, electrochemical polish, tribochemistry polishing and chemically mechanical polishing
Deng.
Chemical polishing is traditional semiconductor wafer surface processing technology, belongs to the chemical corrosion process of no abrasive grain, such as adopts
Use HNO3, HF and H2O constitutes polishing fluid and polishes to SiC crystal column surface.The polishing of catalyst assistant chemical is in chemical polishing
Using catalyst to improve SiC material removal rate, belong to no abrasive machining mode.Electrochemical polish is electrochemical oxidation and oxygen
Change layer and removes the process combined.Current density when by control polishing realizes the oxidation rate to SiC crystal column surface
It is controlled, and then improves polishing speed.Tribochemistry polishing is to make SiC wafer surface to be machined generationization using rubbing action
Learn variation, the polishing method of forming material removal.Chemically mechanical polishing be by working fluid to the chemical action of SiC crystal column surface and
Abrasive grain combines wafer surface mechanism, thus the processing method for realizing smooth not damaged surface, and in the first generation and
It is used widely in the processing of two generation semiconductor materials.
Traditional SiC polishing wafer device and method are easy to generate defect or crackle in SiC wafer, to influence subsequent
The performance of device is manufactured, this is based on, a kind of polissoir that SiC polishing wafer defect can be effectively reduced is provided and method belongs in fact
It is necessary.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of polissoir and methods, use
In solving the problems, such as that SiC polishing wafer device and method are easy to generate defect or crackle in SiC wafer in the prior art.
In order to achieve the above objects and other related objects, the present invention provides a kind of polissoir, and the polissoir includes:
It is catalyzed grinding pad, surface includes catalyst；First rotating device is connected to the catalysis grinding pad, and is the catalysis
Grinding pad provide clockwise with two kinds of rotary powers counterclockwise；Wafer fixed disk, for fixing wafer to be ground so that it is described to
Grinding crystal wafer is contacted with the catalysis grinding pad；Second rotating device is connected to the wafer fixed disk, fixes for the wafer
Disk and the wafer to be ground provide rotary power, and provide the pressure of the wafer to be ground and the catalysis grinding pad；With
And voltage device, for applying voltage for the catalysis grinding pad and the wafer to be ground.
Preferably, the polissoir further includes a liquid feed device, for providing reaction liquid for the catalysis grinding pad.
Preferably, the reaction liquid includes water (H2) or hydrogen peroxide (H O2O2) aqueous solution.
Preferably, the catalyst includes platinum (Pt), palladium (Pd), ruthenium (Ru), nickel (Ni), cobalt (Co), chromium (Cr) and molybdenum
(Mo) combination of one or more of group composed by.
Preferably, the wafer to be ground includes one of silicon carbide (SiC) wafer and gallium nitride (GaN) wafer.
Preferably, second rotating device provides the wafer to be ground and the pressure limit for being catalyzed grinding pad is
500hpa~2000hpa.
Preferably, it is little that second rotating device, which provides the wafer fixed disk and the revolving speed of the wafer to be ground,
In 30rpm.
Preferably, the voltage device be the catalysis grinding pad and the wafer to be ground apply voltage range be-
1.5V~+1.5V.
Preferably, the polissoir further includes a fluid circulation system, comprising: accommodation groove is surrounded on the catalysis and grinds
Mill pad, and reaction liquid is provided for the catalysis grinding pad；Feeding device, for providing reaction liquid for the accommodation groove；With
And pumping equipment, for the reaction liquid in the accommodation groove to be discharged.
Further, the reaction liquid that the feeding device provides includes water (H2) or hydrogen peroxide (H O2O2) it is water-soluble
Liquid.
The present invention also provides a kind of polishing methods, comprising: 1) provides polissoir described in as above any one scheme；2) make
The wafer fixed disk and the wafer to be ground keep preset rotation speed, protect the wafer to be ground and the catalysis grinding pad
Preset pressure is held, applies predeterminated voltage to the catalysis grinding pad and the wafer to be ground, and to the catalysis grinding pad
Inject reaction liquid；3) it is based on first rotating device, the catalysis grinding pad is controlled and rotates clockwise first distance, then
It controls the catalysis grinding pad and rotates second distance counterclockwise；4) repeat step 3), until completing to the crystalline substance to be ground
Round polishing.
Preferably, the wafer to be ground and it is described catalysis grinding pad keep pre-set pressure range be 500hpa~
The preset rotation speed of 2000hpa, the wafer fixed disk and the wafer to be ground is to grind no more than 30rpm to the catalysis
The predetermined voltage range that pad and the wafer to be ground apply is -1.5V~+1.5V.
Preferably, in step 3), first rotating device control it is described catalysis grinding pad rotate clockwise first away from
From for no more than the brilliant diameter of a circle to be ground, first rotating device controls what the catalysis grinding pad rotated counterclockwise
Second distance is no more than the brilliant diameter of a circle to be ground.
Preferably, during step 3) and step 4), the wafer fixed disk and the wafer to be ground are kept towards same
One direction rotates.
The present invention also provides a kind of polishing methods, comprising: 1) provides polissoir described in as above any one scheme；2) make
The wafer fixed disk and the wafer to be ground keep preset rotation speed, protect the wafer to be ground and the catalysis grinding pad
Preset pressure is held, applies predeterminated voltage to the catalysis grinding pad and the wafer to be ground, and to the catalysis grinding pad
Inject reaction liquid；3) it is based on first rotating device, controls the catalysis grinding pad clockwise or counterclockwise first
Distance continues to control catalysis grinding pad second distance clockwise or counterclockwise after then stopping between default,
In, the first distance is identical as the direction of rotation of the second distance；And 4) repeat step 3), until completing to institute
State the polishing of wafer to be ground.
Preferably, the wafer to be ground and it is described catalysis grinding pad keep pre-set pressure range be 500hpa~
The preset rotation speed of 2000hpa, the wafer fixed disk and the wafer to be ground is to grind no more than 30rpm to the catalysis
The predetermined voltage range that pad and the wafer to be ground apply is -1.5V~+1.5V.
Preferably, in step 3), the first distance that first rotating device controls the catalysis grinding pad rotation is not
Greater than the brilliant diameter of a circle to be ground, the second distance that first rotating device controls the catalysis grinding pad rotation is not
Greater than the brilliant diameter of a circle to be ground.
Preferably, the preset time of the stopping is 1sec~60sec.
Preferably, during step 3) and step 4), the wafer fixed disk and the wafer to be ground are kept towards same
One direction rotates.
As described above, polissoir and method of the invention, have the advantages that
By providing a kind of polissoir, the first rotating device in the equipment can provide the present invention for catalysis grinding pad
Clockwise with two kinds of rotary powers counterclockwise, while the second rotating device can provide rotation for wafer fixed disk and wafer to be ground
Rotatory force and pressure, voltage device provide voltage for catalysis grinding pad and wafer to be ground, realize the polishing of wafer to be ground.Together
When, different from traditional, continuous rotation, the present invention are designed as up time for grinding pad is catalyzed to catalysis grinding pad in the same direction always
Needle rotation and counterclockwise rotation combine, or stop certain time after rotation certain distance, can substantially reduce described to be ground
The defect of wafer or the generation of crackle improve grinding quality.
Detailed description of the invention
Fig. 1 a and Fig. 1 b are respectively indicated as the structural schematic diagram of polissoir of the invention.
Fig. 2 is shown as the rotation schematic diagram of the catalysis grinding pad of the polishing method of the embodiment of the present invention 1.
Fig. 3 is shown as the rotation schematic diagram of the catalysis grinding pad of the polishing method of the embodiment of the present invention 2.
Fig. 4 is shown as the step flow diagram of the polishing method of the embodiment of the present invention 1.
Fig. 5 is shown as the step flow diagram of the polishing method of the embodiment of the present invention 2.
Component label instructions
101 catalysis grinding pads
102 first rotating devices
103 wafer fixed disks
104 second rotating devices
105 wafers to be ground
106 accommodation grooves
107 voltage devices
108 liquid feed devices
109 feeding devices
110 pumping equipments
S11~S14 step
S21~S24 step
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to Fig. 1 a~Fig. 5.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in diagram then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
Embodiment 1
As shown in Figure 1a, the present embodiment provides a kind of polissoir, the polissoir includes: catalysis grinding pad 101, the
One rotating device 102, wafer fixed disk 103, wafer to be ground 105, the second rotating device 104, voltage device 107, feed flow dress
Set 108 or fluid circulation system.
101 surface of catalysis grinding pad includes catalyst, the catalyst include platinum (Pt), palladium (Pd), ruthenium (Ru),
The combination of one or more of group composed by nickel (Ni), cobalt (Co), chromium (Cr) and molybdenum (Mo).In the present embodiment,
It is platinum (Pt) that the catalyst, which is selected,.
First rotating device 102 is connected to the catalysis grinding pad 101, and provides for the catalysis grinding pad 101
Clockwise with two kinds of rotary powers counterclockwise, in addition, first rotating device 102 can also mention for the catalysis grinding pad 101
For operation of stopping rotating, aforesaid operations can realize that the rotating control assembly, which can be selected, is by a rotating control assembly
Such as single-chip microcontroller or software program.First rotating device 102 of the invention can provide clockwise for the catalysis grinding pad 101
Rotation, rotate and stop rotating etc. counterclockwise operation, can by different rotation combinations for traditional single direction rotation
Issuable defect and crackle when to avoid wafer 105 to be ground polishing.
The wafer fixed disk 103 is for fixing wafer 105 to be ground, so that the wafer to be ground 105 is urged with described
Change grinding pad 101 to contact.
Second rotating device 104 is connected to the wafer fixed disk 103, is the wafer fixed disk 103 and described
Wafer 105 to be ground provides rotary power, and provides the pressure of the wafer to be ground 105 with the catalysis grinding pad 101.
As an example, the wafer to be ground 105 includes one in silicon carbide (SiC) wafer and gallium nitride (GaN) wafer
Kind.In the present embodiment, it is silicon carbide (SiC) wafer that the wafer to be ground 105, which is selected,.
As an example, second rotating device 104 provides the wafer to be ground 105 and the catalysis grinding pad 101
Pressure limit be 500hpa~2000hpa.For example, the pressure of the wafer to be ground 105 and the catalysis grinding pad 101 can
To select as 500hpa, 800hpa, 1000hpa, 1500hpa, 2000hpa etc., in the present embodiment, the wafer to be ground
105 with it is described catalysis grinding pad 101 pressure limit select be 500hpa~1000hpa, this range can guarantee described to be ground
The polishing speed of wafer 105, while excessively high pressure being avoided to cause increase or the sliver of 105 internal stress of wafer to be ground.
As an example, second rotating device 104 provides the wafer fixed disk 103 and the wafer to be ground 105
Revolving speed be no more than 30rpm.
The voltage device 107 is used to apply voltage for the catalysis grinding pad 101 and the wafer to be ground 105.
As an example, the voltage device 107 is that the catalysis grinding pad 101 and the wafer to be ground 105 apply electricity
Pressure range is -1.5V~+1.5V.
As shown in Figure 1a, the liquid feed device 108 is used to provide reaction liquid for the catalysis grinding pad 101.As showing
Example, the reaction liquid include water (H2) or hydrogen peroxide (H O2O2) aqueous solution.
Under the catalysis that voltage device 107 applies voltage and catalyst Pt, SiC crystal column surface occurs following reaction and makes
The SiC for obtaining its surface is removed:
H2O→H++OH-
SiC+OH-→Si(OH)4↓+CO,CO2↑
As shown in Figure 1 b, the liquid feed device 108 also could alternatively be a fluid circulation system, comprising: accommodation groove 106,
It is surrounded on the catalysis grinding pad 101, and provides reaction liquid for the catalysis grinding pad 101；Feeding device 109, for for
The accommodation groove 106 provides reaction liquid；And pumping equipment 110, for the reaction liquid in the accommodation groove 106 to be arranged
Out.As an example, the reaction liquid that the feeding device 109 provides includes water (H2) or hydrogen peroxide (H O2O2) aqueous solution.
When polishing progress, the reaction liquid preferably submerges 101 surface of catalysis grinding pad.
Embodiment 2
As shown in Fig. 1 a or Fig. 1 b, Fig. 2 and Fig. 4, the present embodiment also provides a kind of polishing method, comprising:
As shown in Fig. 1 a or Fig. 1 b and Fig. 4, progress step 1) S11 first provides (Fig. 1 a or Fig. 1 b as described in Example 1
It is shown) polissoir；
As shown in Fig. 1 a or Fig. 1 b and Fig. 4, step 2) S12 is then carried out, makes the wafer fixed disk 103 and described wait grind
It grinds wafer 105 and keeps preset rotation speed, so that the wafer to be ground 105 is kept preset pressure with the catalysis grinding pad 101, to institute
It states catalysis grinding pad 101 and the wafer to be ground 105 applies predeterminated voltage, and injected instead to the catalysis grinding pad 101
Answer liquid.
As an example, the pre-set pressure range that the wafer to be ground 105 is kept with the catalysis grinding pad 101 is
The preset rotation speed of 500hpa~2000hpa, the wafer fixed disk 103 and the wafer to be ground 105 be no more than 30rpm,
The predetermined voltage range applied to the catalysis grinding pad 101 and the wafer to be ground 105 is -1.5V~+1.5V, described anti-
Answering liquid is water (H2O)。
As shown in Fig. 1 a or Fig. 1 b, Fig. 2 and Fig. 4, step 3) S13 is then carried out, is based on first rotating device 102,
It controls the catalysis grinding pad 101 and rotates clockwise first distance, then control the rotation the counterclockwise of the catalysis grinding pad 101
Two distances.
As an example, first rotating device 102 controls the first distance that the catalysis grinding pad 101 rotates clockwise
For the diameter d no more than the wafer 105 to be ground, first rotating device 102 controls 101 inverse time of catalysis grinding pad
The second distance of needle rotation is the diameter d no more than the wafer 105 to be ground.In the present embodiment, first rotating dress
Set the diameter d that the first distance that the 102 controls catalysis grinding pad 101 rotates clockwise is equal to the wafer 105 to be ground, institute
It states the first rotating device 102 and controls the second distance that rotates counterclockwise of catalysis grinding pad 101 and be equal to the wafer to be ground
105 diameter d.Similarly, the catalysis grinding pad 101 rotation first distance counterclockwise can also be first controlled, then described in control
Catalysis grinding pad 101 rotates clockwise second distance.
Being catalyzed grinding pad 101, continuous rotation, the present embodiment will be catalyzed grinding pad in the same direction always different from traditional
101 are designed as rotating clockwise and rotating counterclockwise combination, and the distance rotated is straight no more than the wafer 105 to be ground
Diameter can substantially reduce the defect of the wafer to be ground 105 or the generation of crackle, improve grinding quality.Experiment shows this reality
The polishing method of example is applied compared to traditional polishing method, the polishing defect rate of SiC wafer is reduced to 1% by 5%.
As shown in Fig. 2, finally carrying out step 4) S14, repeat step 3) S13, until completing to the crystalline substance to be ground
The polishing of circle 105.
As an example, during step 3) S13 and step 4) S14, the wafer fixed disk 103 and the crystalline substance to be ground
Circle 105 keeps rotating in the same direction.
Embodiment 3
As shown in Fig. 1 a or Fig. 1 b, Fig. 3 and Fig. 5, the present embodiment also provides a kind of polishing method, comprising:
As shown in Fig. 1 a or Fig. 1 b and Fig. 5, progress step 1) S21 first provides (Fig. 1 a or Fig. 1 b as described in Example 1
It is shown) polissoir.
As shown in figure 5, then carrying out step 2) S22, protect the wafer fixed disk 103 and the wafer to be ground 105
Preset rotation speed is held, so that the wafer to be ground 105 is kept preset pressure with the catalysis grinding pad 101, is ground to the catalysis
Pad 101 and the wafer to be ground 105 apply predeterminated voltage, and inject reaction liquid to the catalysis grinding pad 101；
As an example, the pre-set pressure range that the wafer to be ground 105 is kept with the catalysis grinding pad 101 is
The preset rotation speed of 500hpa~2000hpa, the wafer fixed disk 103 and the wafer to be ground 105 be no more than 30rpm,
The predetermined voltage range applied to the catalysis grinding pad 101 and the wafer to be ground 105 is -1.5V~+1.5V, described anti-
Answering liquid is water (H2O)。
As shown in Fig. 1 a or Fig. 1 b, Fig. 3 and Fig. 5, step 3) S23 is then carried out, is based on first rotating device 102,
The catalysis grinding pad 101 first distance clockwise or counterclockwise is controlled, after then stopping between default, continues to control institute
State catalysis grinding pad 101 second distance clockwise or counterclockwise, wherein the rotation of the first distance and the second distance
It is identical to turn direction.
As an example, it is little that first rotating device 102, which controls the first distance that the catalysis grinding pad 101 rotates,
In the diameter d of the wafer 105 to be ground, first rotating device 102 controls second that the catalysis grinding pad 101 rotates
Distance is the diameter d no more than the wafer 105 to be ground.In the present embodiment, first rotating device 102 controls described
It is catalyzed the diameter d that the first distance that grinding pad 101 rotates is equal to the wafer 105 to be ground, first rotating device 102 is controlled
Make the diameter d that the second distance that the catalysis grinding pad 101 rotates is equal to the wafer 105 to be ground.
As an example, the preset time of the stopping is 1sec~60sec, for example, the preset time of the stopping can be with
For 1sec, 5sec, 10sec, 20sec, 30sec, 60sec etc..
Being catalyzed grinding pad 101, continuous rotation, the present invention will be catalyzed grinding pad 101 in the same direction always different from traditional
Stop certain time after being designed as rotation certain distance, the defect or crackle of the wafer to be ground 105 can be substantially reduced
It generates, improves grinding quality.Experiment shows the polishing method of the present embodiment compared to traditional polishing method, the throwing of SiC wafer
Optical defect rate is reduced to 1% by 5%.
As shown in figure 5, finally carrying out step 4) S24, repeat step 3) S23, until completing to the crystalline substance to be ground
The polishing of circle 105.
As an example, during step 3) S23 and step 4) S24, the wafer fixed disk 103 and the crystalline substance to be ground
Circle 105 keeps rotating in the same direction.
As described above, polissoir and method of the invention, have the advantages that
For the present invention by providing a kind of polissoir, the first rotating device 102 in the equipment can be catalysis grinding pad
101 provide clockwise with two kinds of rotary powers counterclockwise, while the second rotating device 104 can for wafer fixed disk 103 and to
Grinding crystal wafer 105 provides rotary power and pressure, and voltage device 107 is that catalysis grinding pad 101 and wafer to be ground 105 provide electricity
Pressure, realizes the polishing of wafer 105 to be ground.Meanwhile it being catalyzed grinding pad 101 and being different from traditional continuous rotation in the same direction always
Turn, the present invention will be catalyzed grinding pad 101 and be designed as stopping after rotating clockwise and rotating counterclockwise combination, or rotation certain distance
Only certain time can substantially reduce the defect of the wafer to be ground 105 or the generation of crackle, improve grinding quality.
So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (19)
1. a kind of polissoir, which is characterized in that the polissoir includes:
It is catalyzed grinding pad, surface includes catalyst；
First rotating device is connected to the catalysis grinding pad, and provides clockwise and counterclockwise two for the catalysis grinding pad
Kind rotary power；
Wafer fixed disk, for fixing wafer to be ground, so that the wafer to be ground is contacted with the catalysis grinding pad；
Second rotating device is connected to the wafer fixed disk, provides rotation for the wafer fixed disk and the wafer to be ground
Rotatory force, and the pressure of the wafer to be ground and the catalysis grinding pad is provided；
Voltage device, for applying voltage for the catalysis grinding pad and the wafer to be ground.
2. polissoir according to claim 1, it is characterised in that: further include a liquid feed device, for being the catalysis
Grinding pad provides reaction liquid.
3. polissoir according to claim 2, it is characterised in that: the reaction liquid includes water (H2) or hydrogen peroxide O
(H2O2) aqueous solution.
4. polissoir according to claim 1, it is characterised in that: the catalyst includes platinum (Pt), palladium (Pd), ruthenium
(Ru), one or more of group composed by nickel (Ni), cobalt (Co), chromium (Cr) and molybdenum (Mo) combines.
5. polissoir according to claim 1, it is characterised in that: the wafer to be ground includes silicon carbide (SiC) crystalline substance
One of round and gallium nitride (GaN) wafer.
6. polissoir according to claim 1, it is characterised in that: second rotating device provides the crystalline substance to be ground
The round pressure limit with the catalysis grinding pad is 500hpa~2000hpa.
7. polissoir according to claim 1, it is characterised in that: second rotating device provides the wafer and fixes
The revolving speed of disk and the wafer to be ground is no more than 30rpm.
8. polissoir according to claim 1, it is characterised in that: the voltage device is the catalysis grinding pad and institute
Stating wafer to be ground to apply voltage range is -1.5V~+1.5V.
9. polissoir according to claim 1, it is characterised in that: further include a fluid circulation system, comprising:
Accommodation groove is surrounded on the catalysis grinding pad, and provides reaction liquid for the catalysis grinding pad；
Feeding device, for providing reaction liquid for the accommodation groove；And
Pumping equipment, for the reaction liquid in the accommodation groove to be discharged.
10. polissoir according to claim 9, it is characterised in that: the reaction liquid that the feeding device provides includes
Water (H2) or hydrogen peroxide (H O2O2) aqueous solution.
11. a kind of polishing method characterized by comprising
1) polissoir as described in claim 1~10 any one is provided；
2) so that the wafer fixed disk and the wafer to be ground is kept preset rotation speed, make the wafer to be ground and the catalysis
Grinding pad keeps preset pressure, applies predeterminated voltage to the catalysis grinding pad and the wafer to be ground, and urge to described
Change grinding pad and injects reaction liquid；
3) it is based on first rotating device, the catalysis grinding pad is controlled and rotates clockwise first distance, then described in control
Catalysis grinding pad rotates second distance counterclockwise；And
4) repeat step 3), until completing the polishing to the wafer to be ground.
12. polishing method according to claim 11, it is characterised in that: the wafer to be ground and the catalysis grinding pad
The pre-set pressure range of holding is 500hpa~2000hpa, the preset rotation speed of the wafer fixed disk and the wafer to be ground
Predetermined voltage range to apply to the catalysis grinding pad and the wafer to be ground no more than 30rpm be -1.5V~+
1.5V。
13. polishing method according to claim 11, it is characterised in that: in step 3), the first rotating device control
The first distance that the catalysis grinding pad rotates clockwise is no more than the brilliant diameter of a circle to be ground, first rotating dress
Setting and controlling the second distance that the catalysis grinding pad rotates counterclockwise is no more than the brilliant diameter of a circle to be ground.
14. polishing method according to claim 11, it is characterised in that: during step 3) and step 4), the crystalline substance
Circle fixed disk and the wafer holding to be ground rotate in the same direction.
15. a kind of polishing method characterized by comprising
1) polissoir as described in claim 1~10 any one is provided；
2) so that the wafer fixed disk and the wafer to be ground is kept preset rotation speed, make the wafer to be ground and the catalysis
Grinding pad keeps preset pressure, applies predeterminated voltage to the catalysis grinding pad and the wafer to be ground, and urge to described
Change grinding pad and injects reaction liquid；
3) it is based on first rotating device, controls catalysis grinding pad first distance clockwise or counterclockwise, then
After stopping between default, continue to control catalysis grinding pad second distance clockwise or counterclockwise, wherein described first
Distance is identical as the direction of rotation of the second distance；And
4) repeat step 3), until completing the polishing to the wafer to be ground.
16. polishing method according to claim 15, it is characterised in that: the wafer to be ground and the catalysis grinding pad
The pre-set pressure range of holding is 500hpa~2000hpa, the preset rotation speed of the wafer fixed disk and the wafer to be ground
Predetermined voltage range to apply to the catalysis grinding pad and the wafer to be ground no more than 30rpm be -1.5V~+
1.5V。
17. polishing method according to claim 15, it is characterised in that: in step 3), the first rotating device control
The first distance of the catalysis grinding pad rotation is no more than the brilliant diameter of a circle to be ground, the first rotating device control
The second distance of the catalysis grinding pad rotation is no more than the brilliant diameter of a circle to be ground.
18. polishing method according to claim 15, it is characterised in that: the preset time of the stopping be 1sec~
60sec。
19. polishing method according to claim 15, it is characterised in that: during step 3) and step 4), the crystalline substance
Circle fixed disk and the wafer holding to be ground rotate in the same direction.
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| CN201711047198.9A CN109732472A (en) | 2017-10-31 | 2017-10-31 | Polissoir and method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110962040A (en) * | 2018-09-28 | 2020-04-07 | 台湾积体电路制造股份有限公司 | Cleaning method and cleaning system |
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| CN110962040A (en) * | 2018-09-28 | 2020-04-07 | 台湾积体电路制造股份有限公司 | Cleaning method and cleaning system |
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