TWI691378B - Sawing wire - Google Patents
Sawing wire Download PDFInfo
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- TWI691378B TWI691378B TW108121231A TW108121231A TWI691378B TW I691378 B TWI691378 B TW I691378B TW 108121231 A TW108121231 A TW 108121231A TW 108121231 A TW108121231 A TW 108121231A TW I691378 B TWI691378 B TW I691378B
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- 239000006061 abrasive grain Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000013589 supplement Substances 0.000 description 4
- 229910000975 Carbon steel Inorganic materials 0.000 description 3
- 239000010962 carbon steel Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000013329 compounding Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
- B24B27/0633—Grinders for cutting-off using a cutting wire
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
本發明之鋸線2具有:第一波形賦予部4、第二波形賦予部6、第三波形賦予部8及直線部10。第一波形賦予部4具有於平面上振動之波浪形狀。第二波形賦予部6具有包含於平面上振動之第一波成分、及於與該第一波成分之平面不同之平面上振動之第二波成分的波形。第三波形賦予部6具有於與第一波形賦予部4之平面不同之平面上振動之波浪形狀。直線部10不具有波浪形狀。第一波成分之振動方向實質地與第一波形賦予部中之波之振動方向一致。第二波成分之振動方向與第三波形賦予部中之波之振動方向實質地一致。The saw wire 2 of the present invention includes a first waveform applying portion 4, a second waveform applying portion 6, a third waveform applying portion 8, and a straight portion 10. The first waveform imparting portion 4 has a wave shape that vibrates on a plane. The second waveform imparting section 6 has a waveform including a first wave component vibrating on a plane and a second wave component vibrating on a plane different from the plane of the first wave component. The third waveform imparting portion 6 has a wave shape that vibrates on a plane different from that of the first waveform imparting portion 4. The straight portion 10 does not have a wave shape. The vibration direction of the first wave component substantially coincides with the vibration direction of the wave in the first waveform imparting portion. The vibration direction of the second wave component substantially coincides with the vibration direction of the wave in the third waveform imparting portion.
Description
本發明係關於一種鋸線。詳細而言,本發明係關於一種鋸線之波形賦予之改良。The invention relates to a saw wire. In detail, the present invention relates to an improvement to the waveform of a saw wire.
半導體錠之切割使用鋸線。藉由切割獲得晶圓。使用固定研磨粒式之鋸線及游離研磨粒式之鋸線。固定研磨粒式之鋸線切削效率優異。然而,利用固定研磨粒式之鋸線獲得之切削面尺寸精度遜色。就晶圓之性能之觀點而言,游離研磨粒式之鋸線有利。Saw wire is used for cutting semiconductor ingots. Wafers are obtained by cutting. Use fixed abrasive grain saw wire and free abrasive grain saw wire. The saw wire with a fixed abrasive grain has excellent cutting efficiency. However, the dimensional accuracy of the cutting surface obtained with a fixed abrasive grain saw wire is inferior. From the standpoint of wafer performance, free abrasive grain saw wires are advantageous.
游離研磨粒式之鋸線於切割前要先對該鋸線噴附漿料。該漿料包含研磨粒。藉由鋸線之移行,使得研磨粒被引入至錠與鋸線之間。藉由該研磨粒之移動切削錠,實現切割。可引入較多研磨粒之鋸線切削效率優異。可引入較多研磨粒之鋸線亦可有助於提昇切削面之尺寸精度。The free abrasive grain saw wire should be sprayed with slurry before cutting. The slurry contains abrasive particles. By the movement of the saw wire, the abrasive particles are introduced between the ingot and the saw wire. By moving the ingot to cut the ingot, the cutting is realized. The saw wire that can introduce more abrasive grains has excellent cutting efficiency. A saw wire that can introduce more abrasive particles can also help to improve the dimensional accuracy of the cutting surface.
日本專利特開2004-276207公報中揭示有被賦予波形之鋸線。該波形具有波浪形狀。波具有山及谷。研磨粒補充到谷中,於錠之內部行進。該鋸線可引入較多研磨粒。Japanese Patent Laid-Open No. 2004-276207 discloses a saw wire that is given a waveform. The waveform has a wavy shape. Waves have mountains and valleys. The grits are added to the valley and travel inside the ingot. The saw wire can introduce more abrasive particles.
日本專利特表2008-519698公報中揭示有同樣之賦予波形之鋸線。該鋸線具有2種波。一種波之振動方向與另一種波之振動方向不同。 [先前技術文獻] [專利文獻] Japanese Patent Special Publication No. 2008-519698 discloses a saw wire with the same waveform. This saw wire has two kinds of waves. The vibration direction of one wave is different from the vibration direction of another wave. [Prior Technical Literature] [Patent Literature]
[專利文獻1]日本專利特開2004-276207公報 [專利文獻2]日本專利特表2008-519698公報 [Patent Document 1] Japanese Patent Laid-Open No. 2004-276207 [Patent Document 2] Japanese Patent Special Publication 2008-519698
[發明所欲解決之課題][Problems to be solved by the invention]
期望提昇鋸線之切削效率。亦期望進一步提昇切削面之精度。本發明之目的在於提供一種可滿足該等要求之鋸線。 [解決課題之技術手段] Expect to improve the cutting efficiency of the saw wire. It is also expected to further improve the accuracy of the cutting surface. The purpose of the present invention is to provide a saw wire that can meet these requirements. [Technical means to solve the problem]
本發明之鋸線具有第一波形賦予部與第二波形賦予部。第一波形賦予部具有於平面上振動之波浪形狀。第二波形賦予部具有包含於平面上振動之第一波成分、及於與該第一波成分之平面不同之平面上振動之第二波成分的波形。The saw wire of the present invention has a first waveform imparting portion and a second waveform imparting portion. The first waveform imparting portion has a wave shape that vibrates on a plane. The second waveform imparting section has a waveform including a first wave component that vibrates on a plane and a second wave component that vibrates on a plane different from the plane of the first wave component.
較佳為第二波成分之振動方向實質地與第一波成分之振動方向垂直。Preferably, the vibration direction of the second wave component is substantially perpendicular to the vibration direction of the first wave component.
於第一波形賦予部中,山與谷可交替地排列。較佳為1個第一波形賦予部中之山之個數為5以上300以下。In the first waveform imparting portion, mountains and valleys can be alternately arranged. It is preferable that the number of mountains in one first waveform imparting portion is 5 or more and 300 or less.
於第二波形賦予部之第一波成分中,山與谷可交替地排列。較佳為1個第二波形賦予部中之第一波成分之山之個數為5以上300以下。In the first wave component of the second waveform imparting portion, mountains and valleys can be arranged alternately. It is preferable that the number of mountains of the first wave component in one second waveform imparting section is 5 or more and 300 or less.
於第二波形賦予部之第二波成分中,山與谷可交替地排列。較佳為1個第二波形賦予部中之第二波成分之山之個數為5以上300以下。In the second wave component of the second waveform imparting portion, mountains and valleys can be alternately arranged. It is preferable that the number of mountains of the second wave component in one second waveform imparting section is 5 or more and 300 or less.
較佳為鋸線進而具備第三波形賦予部。該第三波形賦予部具有於與第一波形賦予部之平面不同之平面上振動之波浪形狀。It is preferable that the saw wire further includes a third waveform imparting portion. The third waveform imparting portion has a wave shape that vibrates on a plane different from the plane of the first waveform imparting portion.
較佳為第三波形賦予部中之波之振動方向實質地與第一波形賦予部中之波之振動方向垂直。It is preferable that the vibration direction of the wave in the third waveform application portion is substantially perpendicular to the vibration direction of the wave in the first waveform application portion.
較佳為第一波成分之振動方向實質地與第一波形賦予部中之波之振動方向一致,第二波成分之振動方向實質地與第三波形賦予部中之波之振動方向一致。It is preferable that the vibration direction of the first wave component substantially coincides with the vibration direction of the wave in the first waveform imparting portion, and the vibration direction of the second wave component substantially coincides with the vibration direction of the wave in the third waveform imparting portion.
於第三波形賦予部中,山與谷可交替地排列。1個第三波形賦予部中之山之個數為5以上300以下。In the third waveform imparting portion, mountains and valleys may be alternately arranged. The number of mountains in one third waveform imparting section is 5 or more and 300 or less.
較佳為鋸線進而具備直線部。 [發明之效果] It is preferable that the saw wire further includes a straight portion. [Effect of invention]
由於本發明之鋸線具有2種以上之波形賦予部,故研磨粒之引入性能優異。藉由該鋸線,可達成高效率之切削。藉由該鋸線可獲得尺寸精度較好之切削面。Since the saw wire of the present invention has two or more types of waveform-imparting portions, the introduction performance of abrasive grains is excellent. With this saw wire, efficient cutting can be achieved. The sawing wire can obtain a cutting surface with better dimensional accuracy.
以下,適當參照圖式並基於較佳之實施形態詳細地說明本發明。Hereinafter, the present invention will be described in detail based on preferred embodiments with appropriate reference to the drawings.
圖1(a)及(b)以及圖2中表示有鋸線2。於圖1(a)中,上下方向(Y方向)係鉛直方向,左右方向(X方向)係水平方向。於圖1(b)中,上下方向(Z方向)係水平方向,左右方向(X方向)亦為水平方向。X方向亦為該鋸線2之長度方向。該鋸線2被安裝於鋸床,朝圖1(a)之左移行。The
該鋸線2具有第一波形賦予部4、第二波形賦予部6、第三波形賦予部8及直線部10。第二波形賦予部6位於較第一波形賦予部4更下游。第三波形賦予部8位於較第二波形賦予部6更下游。直線部10位於較第三波形賦予部8更下游。第一波形賦予部4、第二波形賦予部6、第三波形賦予部8及直線部10形成1個週期。該鋸線2中,沿長度方向規律地配置有複數個週期。複數個第一波形賦予部4、複數個第二波形賦予部6、複數個第三波形賦予部8及複數個直線部10亦可無規律地配置。The
圖2中表示有第一波形賦予部4。第一波形賦予部4具有波浪形狀。一併參照圖1(a)及(b)以及圖2可知,第一波形賦予部4之波於X-Y平面上振動。該波不於其他平面上振動。該波係二維之波。該波以固定波長振動。該波之振動方向係Y方向。FIG. 2 shows the first
圖3係表示圖1(a)之鋸線2之第一波形賦予部4之一部分之放大前視圖。如上所述,第一波形賦予部4之形狀係於Y方向上振動之波。第一波形賦予部4具有山12與谷14。多個山12與多個谷14交替地排列(亦參照圖1(a))。第一波形賦予部4於山12或谷14補充研磨粒,將其朝切削面引入。1個第一波形賦予部4中之山12之個數較佳為5以上300以下,較佳為10以上200以下。谷14之個數與山12之個數大致相同。FIG. 3 is an enlarged front view showing a part of the first
於圖3中,箭頭WL1表示波長,箭頭WH1表示波高。波長WL1較佳為0.2 mm以上50 mm以下,尤佳為0.3 mm以上40 mm以下。波高WH1較佳為0.10 mm以上0.25 mm以下,尤佳為0.11 mm以上0.20 mm以下。In FIG. 3, the arrow WL1 indicates the wavelength, and the arrow WH1 indicates the wave height. The wavelength WL1 is preferably 0.2 mm or more and 50 mm or less, and particularly preferably 0.3 mm or more and 40 mm or less. The wave height WH1 is preferably 0.10 mm or more and 0.25 mm or less, and particularly preferably 0.11 mm or more and 0.20 mm or less.
較佳為波長WL1滿足下述之數式。 1.1*Di≦WL1≦50*Di 於該數式中,Di表示線徑(參照圖2)。換言之,波長WL1為線徑Di之1.1倍以上50倍以下。較佳為波長WL1為線徑Di之3倍以上40倍以下。 Preferably, the wavelength WL1 satisfies the following formula. 1.1*Di≦WL1≦50*Di In this equation, Di represents the wire diameter (see FIG. 2). In other words, the wavelength WL1 is 1.1 times or more and 50 times or less the wire diameter Di. Preferably, the wavelength WL1 is 3 times or more and 40 times or less the wire diameter Di.
較佳為波高WH1滿足下述之數式。 1.05*Di≦WH1≦5*Di 於該數式中,Di表示線徑(參照圖2)。換言之,波高WH1為線徑Di之1.05倍以上5倍以下。較佳為波高WH1為線徑Di之1.10倍以上3倍以下。 The wave height WH1 preferably satisfies the following formula. 1.05*Di≦WH1≦5*Di In this equation, Di represents the wire diameter (see FIG. 2). In other words, the wave height WH1 is 1.05 times or more and 5 times or less the wire diameter Di. Preferably, the wave height WH1 is 1.10 times or more and 3 times or less the wire diameter Di.
圖4係表示圖1之鋸線2之第二波形賦予部6之一部分之放大右側視圖。第二波形賦予部6具有波狀之波形。該波形具有圖4中示意地表示之第一波成分16與第二波成分18複合而成之形狀。換言之,第二波形賦予部6中,第一波成分16之振動與第二波成分18之振動沿鋸線2之長度方向同時地行進。波形亦可具有複合3種以上之波成分之形狀。4 is an enlarged right side view showing a part of the second
圖5中示意地表示第一波成分16。據圖4及5可知,第一波成分16於X-Y平面上振動。第一波成分16不於其他平面上振動。第一波成分16係二維之波。第一波成分16以固定波長振動。第一波成分16之波之振動方向係Y方向。第一波成分16之波之振動方向與第一波形賦予部4之波振動方向一致。第一波成分16之波之振動方向亦可與第一波形賦予部4之波振動方向不同。The
如圖5所示,第一波成分16具有多個山20與多個谷22。該等山20及谷22沿X方向交替地配置。鋸線2於第一波成分16之山20或谷22中補充研磨粒,並將其朝切削面引入。1個第二波形賦予部6中之第一波成分16之山20之個數較佳為5以上300以下,較佳為10以上200以下。谷22之個數與山20之個數大致相同。於圖5中,箭頭WL21表示第一波成分16之波長,箭頭WH21表示第一波成分16之波高。As shown in FIG. 5, the
較佳為第一波成分16之波長WL21滿足下述之數式。
1.1*Di≦WL21≦50*Di
於該數式中,Di表示線徑(參照圖4)。換言之,第一波成分16之波長WL21為線徑Di之1.1倍以上50倍以下。較佳為波長WL21為線徑Di之3倍以上40倍以下。
The wavelength WL21 of the
較佳為第一波成分16之波高WH21滿足下述之數式。
1.05*Di≦WH21≦5*Di
於該數式中,Di表示線徑(參照圖4)。換言之,第一波成分16之波高WH21為線徑Di之1.05倍以上5倍以下。較佳為波高WH21為線徑Di之1.10倍以上3倍以下。
Preferably, the wave height WH21 of the
圖6中示意地表示第二波成分18。據圖4及6可知,第二波成分18於X-Z平面上振動。第二波成分18不於其他平面上振動。第二波成分18係二維之波。第二波成分18以固定波長振動。第二波成分18之波之振動方向係Z方向。第二波成分18之振動方向與第一波成分16之振動方向不同。本實施形態中,第一波成分16之振動方向實質地與第二波成分18之振動方向垂直。換言之,第二波成分18之振動方向相對於第一波成分16之振動方向之角度θ
21-22為90°(參照圖4)。角度θ
21-22亦可為90°以外之值。角度θ
21-22較佳為20°以上160°以下,尤佳為30°以上150°以下。
FIG. 6 schematically shows the
如圖6所示,第二波成分18具有多個山24與多個谷26。該等山24及谷26沿X方向交替地配置。鋸線2於第二波成分18之山24或谷26中補充研磨粒,並將其朝切削面引入。1個第二波形賦予部6中之第二波成分18之山24之個數較佳為5以上300以下,較佳為10以上200以下。谷26之個數與山24之個數大致相同。於圖6中,箭頭WL22表示第二波成分18之波長,箭頭WH22表示第二波成分18之波高。As shown in FIG. 6, the
較佳為第二波成分18之波長WL22滿足下述之數式。
1.1*Di≦WL22≦50*Di
於該數式中,Di表示線徑(參照圖4)。換言之,第二波成分18之波長WL22為線徑Di之1.1倍以上50倍以下。較佳為波長WL22為線徑Di之3倍以上40倍以下。
The wavelength WL22 of the
較佳為第二波成分18之波高WH22滿足下述之數式。
1.05*Di≦WH22≦5*Di
於該數式中,Di表示線徑(參照圖4)。換言之,第二波成分18之波高WH22為線徑Di之1.05倍以上5倍以下。較佳為波高WH22為線徑Di之1.10倍以上3倍以下。
Preferably, the wave height WH22 of the
第二波成分18之波長WL22可與第一波成分16之波長WL21相同。波長WL22亦可與波長WL21不同。第二波成分18之波高WH22可與第一波成分16之波高WH21相同。波高WH22亦可與波高WH21不同。The wavelength WL22 of the
如上所述,第一波成分16及第二波成分18係二維之波。藉由複合第一波成分16及第二波成分18,形成三維之波。該鋸線22之第二波形賦予部6之波形具有三維形狀。As described above, the
圖7中表示有第三波形賦予部8。第三波形賦予部8具有波浪形狀。一併參照圖1(a)及(b)以及圖7可知,第三波形賦予部8之波於X-Z平面上振動。該波不於其他平面上振動。該波係二維之波。該波以固定波長振動。該波之振動方向係Z方向。該振動方向與第一波形賦予部4之波之振動方向不同。該振動方向實質地與第一波形賦予部4之波之振動方向垂直。換言之,第三波形賦予部8之波之振動方向相對於第一波形賦予部4之波之振動方向所成之角度θ
1-3為90°。角度θ
1-3亦可為90°以外之值。角度θ
1-3較佳為20°以上160°以下,尤佳為30°以上150°以下。
In FIG. 7, a third
第三波形賦予部8之波之振動方向與第二波成分之波之振動方向一致。第三波形賦予部8之波之振動方向亦可與第二波成分之波之振動方向不同。The vibration direction of the wave of the third
圖8係表示圖7之第三波形賦予部8之一部分之放大前視圖。如上所述,第三波形賦予部8之形狀係於Z方向上振動之波。第三波形賦予部8具有山28與谷30。多個山28與多個谷30交替地排列(亦參照圖1(b))。第三波形賦予部8於山28或谷30中補充研磨粒,並將其朝切削面引入。1個第三波形賦予部8中之山28之個數較佳為5以上300以下,較佳為10以上200以下。谷30之個數與山28之個數大致相同。FIG. 8 is an enlarged front view showing a part of the third
於圖8中,箭頭WL3表示波長,箭頭WH3表示波高。波長WL3較佳為0.2 mm以上50 mm以下,尤佳為0.3 mm以上40 mm以下。波高WH3較佳為0.10 mm以上0.25 mm以下,尤佳為0.11 mm以上0.20 mm以下。In FIG. 8, the arrow WL3 indicates the wavelength, and the arrow WH3 indicates the wave height. The wavelength WL3 is preferably 0.2 mm or more and 50 mm or less, and particularly preferably 0.3 mm or more and 40 mm or less. The wave height WH3 is preferably 0.10 mm or more and 0.25 mm or less, and particularly preferably 0.11 mm or more and 0.20 mm or less.
較佳為波長WL3滿足下述之數式。 1.1*Di≦WL3≦50*Di 於該數式中,Di表示線徑(參照圖7)。換言之,波長WL3為線徑Di之1.1倍以上50倍以下。較佳為波長WL3為線徑Di之3倍以上40倍以下。 The wavelength WL3 preferably satisfies the following formula. 1.1*Di≦WL3≦50*Di In this equation, Di represents the wire diameter (see FIG. 7). In other words, the wavelength WL3 is 1.1 times or more and 50 times or less the wire diameter Di. Preferably, the wavelength WL3 is 3 times or more and 40 times or less the wire diameter Di.
較佳為波高WH3滿足下述之數式。 1.05*Di≦WH3≦5*Di 於該數式中,Di表示線徑(參照圖7)。換言之,波高WH3為線徑Di之1.05倍以上5倍以下。較佳為波高WH3為線徑Di之1.10倍以上3倍以下。 The wave height WH3 preferably satisfies the following formula. 1.05*Di≦WH3≦5*Di In this equation, Di represents the wire diameter (see FIG. 7). In other words, the wave height WH3 is 1.05 times or more and 5 times or less the wire diameter Di. Preferably, the wave height WH3 is 1.10 times or more and 3 times or less the wire diameter Di.
第三波形賦予部8之波長WL3可與第一波形賦予部4之波長WL1相同。波長WL3亦可與波長WL1不同。第三波形賦予部8之波高WH3可與第一波形賦予部4之波高WH1相同。波高WH3亦可與波高WH1不同。鋸線2亦可不具有第三波形賦予部8。不具有第三波形賦予部8之鋸線2具有第一波形賦予部4及第二波形賦予部6之2種波形賦予部。鋸線2亦可具有4種以上波形賦予部。The wavelength WL3 of the third
該鋸線2中,多種波形賦予部引入研磨粒。由於該等波形賦予部具有互相不同之波形,故引入較多研磨粒。並且,可將該等研磨粒無偏倚地引入。藉由該鋸線2,而可達成優異之切削效率。該鋸線2亦可有助於提昇切削面之尺寸精度。In this
直線部10不具有波浪形狀。具有直線部10之鋸線2之形態於整體上變化豐富。該直線部10亦可有助於研磨粒之引入。鋸線2亦可不具有直線部10。於圖1(b)中,箭頭Lm表示直線部10之長度。長度較佳為5 mm以上50 mm以下,較佳為10 mm以上40 mm以下。The
本實施形態中,直線部10被夾於第一波形賦予部4與第三波形賦予部8。直線部10亦可被夾於第一波形賦予部4與第二波形賦予部6。直線部10亦可被夾於第二波形賦予部6與第三波形賦予部8。直線部10亦可被夾於2個第一波形賦予部4。直線部10亦可被夾於2個第二波形賦予部6。直線部10亦可被夾於2個第三波形賦予部8。鋸線2亦可不具有直線部10。In the present embodiment, the
鋸線2之線徑Di較佳為0.05 mm以上1.00 mm以下,尤佳為0.10 mm以上0.20 mm以下。該鋸線2之材質係金屬。典型的金屬係碳鋼。較佳為於由碳鋼所構成之主部之表面上實施黃銅鍍覆而成之鋸線2。The wire diameter Di of the
圖9係表示用於圖1之鋸線2之波形賦予裝置32之一部分之示意圖。圖9亦表示有用於鋸線2之母線34。母線34於圖9中之箭頭A之方向上行進。該波形賦予裝置具有第一齒輪對36及第二齒輪對38。第二齒輪對38位於較第一齒輪對36更下游。第二齒輪對38之軸方向與第一齒輪對36之軸方向不同。第二齒輪對38之軸方向相對於第一齒輪對36之軸方向之角度較佳為20°以上160°以下,尤佳為30°以上150°以下。本實施形態中,該角度為90°。9 is a schematic diagram showing a part of the
第一齒輪對36由上齒輪40及下齒輪42所構成。上齒輪40由齒部44與空白部46構成。齒部44上刻有多個齒48。空白部46不具有齒48。下齒輪42亦由齒部44與空白部46構成。齒部44上刻有多個齒48。空白部46不具有齒48。下齒輪42之齒部44處於與上齒輪40之齒部44對應之位置。因此,下齒輪42之齒部44與下齒輪42之齒部44咬合。下齒輪42之空白部46處於與上齒輪40之空白部46對應之位置。當第一齒輪對36旋轉時,齒部44與空白部46交替地出現於上齒輪40與下齒輪42之夾持部。The
第二齒輪對38由左齒輪50及右齒輪構成。圖9中未表示出右齒輪。右齒輪被左齒輪50遮擋。左齒輪50由齒部44與空白部46構成。齒部44上刻有多個齒48。空白部46不具有齒48。雖未圖示,右齒輪亦與左齒輪50同樣地由齒部44與空白部46構成。齒部44上刻有多個齒48。空白部46不具有齒48。右齒輪之齒部44處於與左齒輪50之齒部44對應之位置。因此,右齒輪之齒部44與左齒輪50之齒部44咬合。右齒輪之空白部46處於與左齒輪50之空白部46對應之位置。當第二齒輪對38旋轉時,齒部44與空白部46交替地出現於左齒輪50與右齒輪之夾持部。The
母線34通過第一齒輪對36。當夾持部為齒部44時,母線34中通過第一齒輪對36之部分產生塑性變形。該塑性變形對母線34賦予於Y方向上振動之波成分。當夾持部為空白部46時,母線34中通過第一齒輪對36之部分不產生塑性變形。The
繼通過第一齒輪對36之後,母線34通過第二齒輪對38。當夾持部為齒部44時,母線34中通過第二齒輪對38之部分產生塑性變形。該塑性變形對母線34賦予於Z方向上振動之波成分。當夾持部為空白部46時,母線34中通過第二齒輪對38之部分不產生塑性變形。After passing through the
母線34中,利用第一齒輪對36塑性變形而未利用第二齒輪對38塑性變形之部分具有於Y方向上振動之波浪形狀。該部分係第一波形賦予部4。In the
母線34中,利用第一齒輪對36塑性變形且亦利用第二齒輪對38塑性變形之部分具有包含於Y方向上振動之波成分及於Z方向上振動之波成分之波形。該部分係第二波形賦予部6。In the
母線34中,未利用第一齒輪對36塑性變形而利用第二齒輪對38塑性變形之部分具有於Z方向上振動之波浪形狀。該部分係第三波形賦予部8。The portion of the
母線34中,未利用第一齒輪對36塑性變形且亦未利用第二齒輪對38塑性變形之部分不具有波浪形狀。該部分係直線部10。
[實施例]
In the
以下,雖藉由實施例明示本發明之效果,但不應基於該實施例之記載限定性地解釋本發明。Hereinafter, although the effects of the present invention are shown by the examples, the present invention should not be limitedly interpreted based on the description of the examples.
[實施例1] 製作圖1-8所示之鋸線。該鋸線之規格表示於下述之表1中。該鋸線係由實施黃銅鍍覆之碳鋼構成。 [Example 1] Make the saw wire shown in Figure 1-8. The specifications of the saw wire are shown in Table 1 below. The saw wire is made of carbon steel plated with brass.
[實施例2] 未設置直線部,除此以外與實施例1同樣地獲得實施例2之鋸線。 [Example 2] The saw wire of Example 2 was obtained in the same manner as Example 1 except that the straight portion was not provided.
[實施例3] 未設置第三波形賦予部,除此以外與實施例1同樣地獲得實施例3之鋸線。 [Example 3] A saw wire of Example 3 was obtained in the same manner as Example 1 except that the third waveform providing portion was not provided.
[實施例4] 未設置直線部及第三波形賦予部,除此以外與實施例1同樣地獲得施例4之鋸線。 [Example 4] The saw line of Example 4 was obtained in the same manner as Example 1 except that the straight line portion and the third waveform providing portion were not provided.
[比較例1] 僅設置第二波形賦予部,除此以外與實施例1同樣地獲得比較例1之鋸線。 [Comparative Example 1] The saw wire of Comparative Example 1 was obtained in the same manner as in Example 1 except that only the second waveform imparting portion was provided.
[比較例2] 準備習知之鋸線。該鋸線不具有波浪形狀。 [Comparative Example 2] Prepare the conventional saw wire. The saw wire does not have a wavy shape.
[試驗1] 將各鋸線安裝於鋸床。於該鋸線之表面塗佈包含研磨粒之漿料。使該鋸線以0.6 mm/min之速度移行,切割玻璃板。觀察獲得之切削面之粗糙度與波紋度,進行評價。該結果作為指數表示於下述之表1及2中。數值越大,評價越優異。 [Experiment 1] Install each saw wire on the sawing machine. A slurry containing abrasive particles is coated on the surface of the saw wire. The saw wire was moved at a speed of 0.6 mm/min to cut the glass plate. Observe the roughness and waviness of the obtained cutting surface to evaluate. The results are shown as indexes in Tables 1 and 2 below. The larger the value, the better the evaluation.
[試驗2] 將該鋸線之移行速度設為0.8 mm/min,除此以外與實驗1同樣地對切削面之粗糙度與波紋度進行評價。該結果作為指數表示於下述之表1及2中。數值越大,評價越優異。 [Experiment 2] The roughness and waviness of the cutting surface were evaluated in the same manner as in Experiment 1 except that the running speed of the saw wire was set to 0.8 mm/min. The results are shown as indexes in Tables 1 and 2 below. The larger the value, the better the evaluation.
[表1]
[表2]
如表1及2所示,實施例之鋸線與比較例之鋸線相比,獲得更優異之評價。該評價結果可明示本發明之優勢。 [產業上之可利用性] As shown in Tables 1 and 2, the saw wire of the example obtained a more excellent evaluation than the saw wire of the comparative example. The evaluation result can clearly show the advantages of the present invention. [Industry availability]
本發明之鋸線可用於各種物品之切斷。The saw wire of the invention can be used for cutting various articles.
2:鋸線
4:第一波形賦予部
6:第二波形賦予部
8:第三波形賦予部
10:直線部
12、20、24、28:山
14、22、26、30:谷
16:第一波成分
18:第二波成分
32:波形賦予裝置
34:母線
36:第一齒輪對
38:第二齒輪對
40:上齒輪
42:下齒輪
44:齒部
46:空白部
48:齒
50:左齒輪
2: sawing wire
4: The first waveform giving section
6: Second waveform giving section
8: The third waveform giving section
10:
圖1(a)係表示本發明之一實施形態之鋸線之一部分之前視圖,圖1(b)係表示圖1(a)之鋸線之俯視圖。 圖2係表示圖1之鋸線之第一波形賦予部之放大右側視圖。 圖3係表示圖2之第一波形賦予部之一部分之放大前視圖。 圖4係表示圖1之鋸線之第二波形賦予部之一部分之放大右側視圖。 圖5係表示圖4之第二波形賦予部之第一波成分之示意圖。 圖6係表示圖4之第二波形賦予部之第二波成分之示意圖。 圖4係表示圖1之鋸線之第三波形賦予部之放大右側視圖。 圖8係表示圖7之第三波形賦予部之一部分之放大前視圖。 圖9係表示用於圖1之鋸線之波形賦予裝置之一部分之示意圖。 FIG. 1(a) is a partial front view of a saw wire according to an embodiment of the present invention, and FIG. 1(b) is a plan view of the saw wire of FIG. 1(a). FIG. 2 is an enlarged right side view showing the first waveform imparting portion of the saw wire of FIG. 1. FIG. FIG. 3 is an enlarged front view showing a part of the first waveform imparting portion of FIG. 2. FIG. 4 is an enlarged right side view showing a part of the second waveform imparting portion of the saw wire of FIG. 1. FIG. 5 is a schematic diagram showing the first wave component of the second waveform imparting section of FIG. 4. 6 is a schematic diagram showing the second wave component of the second waveform imparting section of FIG. 4. 4 is an enlarged right side view showing the third waveform imparting portion of the saw wire of FIG. 1. FIG. 8 is an enlarged front view showing a part of the third waveform imparting portion of FIG. 7. FIG. 9 is a schematic diagram showing a part of the waveform imparting device used for the saw wire of FIG.
2:鋸線 2: sawing wire
4:第一波形賦予部 4: The first waveform giving section
6:第二波形賦予部 6: Second waveform giving section
8:第三波形賦予部 8: The third waveform giving section
10:直線部 10: straight line
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TW201726310A (en) * | 2016-01-29 | 2017-08-01 | 曉星股份有限公司 | Wave-patterned monowire for cutting |
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LU91126B1 (en) * | 2004-12-23 | 2006-06-26 | Trefilarbed Bettembourg S A | Monofilament metal saw wire |
DE102009048436B4 (en) * | 2009-10-07 | 2012-12-20 | Siltronic Ag | Method for grinding a semiconductor wafer |
KR20150020527A (en) * | 2012-05-31 | 2015-02-26 | 리드 가부시키가이샤 | Fixed-abrasive-grain wire-saw, method for manufacturing same, and method for cutting workpiece using same |
KR101652062B1 (en) * | 2014-02-04 | 2016-08-29 | 홍덕산업 주식회사 | A structure saw wire maintaining crimp property under high slicing tension |
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JP2004276207A (en) * | 2003-03-18 | 2004-10-07 | Kanai Hiroaki | Saw wire for multi-wire saw |
TW201417972A (en) * | 2012-09-07 | 2014-05-16 | Bekaert Sa Nv | A shaped sawing wire with tensile subsurface residual stresses |
TW201540421A (en) * | 2014-04-29 | 2015-11-01 | Hyosung Corp | Wavy-patterned monowire for cutting |
JP2016150393A (en) * | 2015-02-16 | 2016-08-22 | ジャパンファインスチール株式会社 | Saw wire |
TW201726306A (en) * | 2016-01-29 | 2017-08-01 | 曉星股份有限公司 | Wave-patterned monowire for cutting |
TW201726310A (en) * | 2016-01-29 | 2017-08-01 | 曉星股份有限公司 | Wave-patterned monowire for cutting |
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