TWI691045B - 電子組件、電子組件的製造方法及微元件的轉置方法 - Google Patents
電子組件、電子組件的製造方法及微元件的轉置方法 Download PDFInfo
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- TWI691045B TWI691045B TW106105635A TW106105635A TWI691045B TW I691045 B TWI691045 B TW I691045B TW 106105635 A TW106105635 A TW 106105635A TW 106105635 A TW106105635 A TW 106105635A TW I691045 B TWI691045 B TW I691045B
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- Prior art keywords
- transparent conductive
- micro
- solder
- conductive layer
- connection electrode
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Abstract
一種電子組件包括電路基板、連接電極、微元件以及焊料。連接電極位於電路基板上。連接電極具有第一透明導電層,且第一透明導電層的表面位於相對電路基板的一側且具有複數個微米或奈米級顆粒。微元件與連接電極電性連接。焊料位於連接電極與微元件之間,且固著微元件於連接電極上。
Description
本發明係關於一種微元件的轉置技術,特別是一種電子組件、轉置組件、電子組件的製造方法及微元件的轉置方法。
目前來說,電子產品,例如筆記型電腦、顯示面板、平板、智慧型手機等,其市場趨勢持續朝向輕薄化的設計邁進。因此,將微元件應用於電子設備、裝置、儀器上已蔚為主流。
在設置微元件的製程中,需透過轉置技術以將微元件移動並設置於目標基板上。一般而言,可以透過真空吸頭吸取微元件。然而,真空吸頭一般為硬質材料,在吸取過程中,真空吸頭容易與微元件碰撞而導致微元件受損。此外,在轉置過程中,容易因下壓力不均而使得微元件位移或是與目標基板電性接觸不良,或是在移開真空吸頭時拉力不均而使焊料龜裂。
本發明一實施例提出一種電子組件,其包括電路基板、連接電極、微元件以及焊料。連接電極位於電路基板上。連接電極具有第一透
明導電層。第一透明導電層的表面位於相對電路基板的一側且具有複數個微米或奈米級顆粒。微元件與連接電極電性連接。焊料位於連接電極與微元件之間,且固著微元件於連接電極上。
本發明一實施例提出一種電子組件的製造方法,其包含:提供一電路基板以及形成連接電極於電路基板上。於此,連接電極的相對於電路基板的一側的表面具有複數微突起。其中,形成連接電極於電路基板上的步驟包括:形成第一透明導電薄膜於電路基板上、圖案化第一透明導電薄膜以形成第一透明導電圖案、對第一透明導電圖案進行非完全退火以及蝕刻第一透明圖案的相對電路基板的一側的表面以形成第一透明導電層,以使第一透明導電層的表面具有複數個微米或奈米級顆粒。其中,此些微突起為此些微米或奈米級顆粒。
本發明一實施例提出一種微元件的轉置方法,其包含:形成焊料於連接電極上、透過轉置組件拾取微元件、透過轉置組件將拾取的微元件移動於焊料上、以焊料將微元件固著於連接電極上、驅動幫浦件以通入氣體至通孔,以及於氣體的通入過程中分離微元件與彈性吸頭。於此,各連接電極具有第一透明導電層,並且第一透明導電層的表面具有複數個微米或奈米級顆粒。於此,轉置組件包括彈性吸頭以及幫浦件。彈性吸頭的表面具有分別拾取微元件的凸部,且彈性吸頭的另一表面耦接幫浦件。幫浦件具有至少一氣孔,且彈性吸頭具有連通氣孔的通孔,並且各通孔由彈性吸頭的表面穿過凸部而貫穿至彈性吸頭的另一表面。其中各連接電極的此些微米或奈米級顆粒中的複數者嵌入對應的焊料的底部。
本發明一實施例提出一種轉置組件,其包含彈性吸頭與幫浦
件。彈性吸頭的表面具有至少一凸部。彈性吸頭具有至少一通孔,並且各通孔由彈性吸頭的表面穿過至少一凸部中之一貫穿至彈性吸頭的另一表面。幫浦件耦接彈性吸頭的另一表面。幫浦件具有至少一氣孔,並且至少一氣孔連通於至少一通孔。
綜上所述,本發明實施例的電子組件、轉置組件、電子組件的製造方法及微元件的轉置方法,其透過在連接電極的表面形成複數微突起以使焊料能更穩固地將轉置的微元件與連接電極相互固著。依此,連接電極表面的複數微突起嵌入於焊料的底部,藉以增加焊料與連接電極之間的接觸面積以及附著力。因此,能避免轉置組件於轉置過程中離開微元件時,因焊料與連接電極接著不佳而使微元件歪斜、位移或是脫落等情況發生,進而能提高電子組件的良率。在一些實施例中,本發明實施例的轉置組件及微元件的轉置方法,其透過彈性吸頭來黏取微元件,由於彈性吸頭具有黏性及彈性而且為柔軟材料,因此彈性吸頭不易與微元件碰撞而導致微元件受損。在一些實施例中,本發明實施例的轉置組件及微元件的轉置方法,更可透過於通孔中抽取氣體或是吹送氣體以利於彈性吸頭更加地拾取或放置微元件。
100:電子組件
110:電路基板
111:底板
112:鈍化層
120:連接電極
121:第一透明導電層
121a:第一透明導電薄膜
121b:第一透明導電圖案
121s:表面
122s:表面
122:金屬層
122a:表面
123:第二透明導電層
122s:表面
123s:表面
130:微元件
140:焊料
150:保護層
200:轉置組件
210:彈性吸頭
210a:第一表面
210b:第二表面
211:凸部
220:幫浦件
A-A:剖線
A1:接觸區段
A2:貫穿區段
M1:微結構
H1:通孔
F1:氣孔
P1:顆粒
T1:第一突起
T2:第二突起
W1:接觸窗
TFT:主動元件
D1:汲極
S1、S2、S21a~S21d、S22a、S22b、S23a、S23b、S3、S4、S41、S42、S5、S51、S52、S6S7、SS、SS1、SS2:步驟
圖1為本發明一實施例的電子組件的結構俯視示意圖。
圖2為對應於圖1之A-A剖線的電子組件的截面示意圖。
圖3為本發明一實施例的電子組件的剖面結構示意圖。
圖4為本發明另一實施例的電子組件的剖面結構示意圖。
圖5為本發明又一實施例的電子組件的剖面結構示意圖。
圖6為本發明又一實施例的電子組件的剖面結構示意圖。
圖7為本發明又一實施例的電子組件的剖面結構示意圖。
圖8為本發明再一實施例的電子組件的剖面結構示意圖。
圖9為本發明一實施例的電子組件的製造方法的流程圖。
圖10至15分別是本發明一實施例的電子組件的製造方法於各步驟所形成的剖面示意圖。
圖16為本發明另一實施例的連接電極的製造方法的流程圖。
圖17為本發明另一實施例的連接電極的製造方法的流程圖。
圖18為本發明另一實施例的連接電極的製造方法的流程圖。
圖19為本發明又一實施例的連接電極的製造方法的流程圖。
圖20為本發明一實施例的轉置組件的結構剖面示意圖。
圖21為本發明一實施例的微元件的轉置方法的流程圖。
圖22至25分別是本發明一實施例的微元件的轉置方法於各步驟所形成的剖面示意圖。
圖1為本發明一實施例的電子組件的結構俯視示意圖。圖2為對應於圖1之A-A剖線的電子組件的截面示意圖。請參閱圖1,電子組件100包括電路基板110、連接電極120、微元件130以及焊料140。其中,連接電極120位於電路基板110上。焊料140位於連接電極120與微元件130之間,並且焊料140將微元件130固著於連接電極120上,使得微元件130與連接電極120電性連接。在一些實施例中,微元件130可以是但不限於微發光二極體(micro light emitting diode,micro-led)、微積體電路(micro
integrated circuit,micro-IC)等。
在一些實施例中,電路基板110包括底板111、主動元件TFT及鈍化層112。主動元件TFT位於底板111上,且鈍化層112覆蓋於底板111與主動元件TFT上。於此,鈍化層112可具有至少一個接觸窗W1,接觸窗W1位於對應的主動元件TFT上。部分的連接電極120經由接觸窗W1而貫穿鈍化層112以與主動元件TFT電性連接。詳細而言,連接電極120包括接觸區段A1以及貫穿區段A2。接觸區段A1外露於鈍化層112,貫穿區段A2的一端與接觸區段A1耦接且位於接觸窗W1內,而貫穿區段A2的另一端耦接主動元件TFT(例如是汲極D1)。
在一些實施例中,底板111的材料可以是但不限於矽基板、玻璃基板、石英基板或是高分子基板。
在一些實施例中,鈍化層112的材料可以是但不限於氮化矽(SiNx)、氧化矽(SiOx)或其組合。
在一些實施例中,連接電極120的結構可以是單層或者是雙層以上之疊層。若連接電極120為疊層結構,則位於接觸區段A1或是貫穿區段A2的層數、層別及材料種類並不特別受限。以下詳述各實施態樣。
為了便於說明,於圖3中僅繪示圖2中之電路基板110、連接電極120及焊料140。於此實施例中,如圖3所繪示,連接電極120具有第一透明導電層121,且第一透明導電層121的表面121s具有複數個微米或奈米級顆粒P1且位於相對電路基板110的一側。此些微米或奈米級顆粒P1即為第一透明導電層121的表面121s突起或凹陷的微結構,且此些微結構的尺寸(顆粒P1最寬處之長度)係介於奈米至微米之間。
第一透明導電層121的表面121s可以透過非完全退火方法及蝕刻方法來進行表面粗糙化處理。在一些實施例中,非完全退火方法的退火溫度介於150度(℃)至180度(℃)之間。在另一些實施例中,退火時間介於5分鐘至120分鐘。於此,第一透明導電層121的表面121s可以形成此些微米或奈米級顆粒P1。換言之,此些微米或奈米級顆粒P1即為第一透明導電層121的表面121s經由粗糙化處理所產生微結構。其中,各微米或奈米級顆粒P1的形狀可以是但不限於是球形、尖形、塊形或桿形等。在一些實施例中,顆粒P1的尺寸介於10nm至1000nm之間。當焊料140施加於連接電極120上時,焊料140與第一透明導電層121的表面121s接觸,從而第一透明導電層121的表面121s的微米或奈米級顆粒P1中的複數個(例如是全部的微米或奈米級顆粒P1或是部分的微米或奈米級顆粒P1)可以嵌入焊料140的底部,以增加焊料140與連接電極120之間的接觸面積以及附著力。
在一些實施例中,第一透明導電層121的材料可以是氧化鋅(Zinc oxide,ZnO)、氧化銦鋅(Indium-Zinc Oxide,IZO)、氧化鎵鋅(Gallium-Zinc Oxide,GaZnO)、氧化鋅錫(Zinc-Tin Oxide,ZTO)、氧化銦錫(Indium-Tin Oxide,ITO)等。於本實施例中,第一透明導電層121的材料是氧化銦鎵鋅。
在另一些實施例中,如圖4所繪示,除了第一透明導電層121之外,連接電極120可以更包括金屬層122。金屬層122與第一透明導電層121連接且位於電路基板110與第一透明導電層121之間。當焊料140施加於連接電極120上時,焊料140與第一透明導電層121的表面121s接觸,並
且第一透明導電層121的表面121s的微米或奈米級顆粒P1中的複數個(例如是全部的微米或奈米級顆粒P1或是部分的微米或奈米級顆粒P1)會嵌入焊料140的底部。即,表面121s與焊料140接觸的區域中的微米或奈米級顆粒P1會嵌入焊料140的底部。
在連接電極120的另一些實施例中,如圖5所繪示,連接電極120的金屬層122係位於第一透明導電層121上且覆蓋第一透明導電層121的表面121s。其中,金屬層122隨著覆蓋第一透明導電層121的表面121s上的此些微米或奈米級顆粒P1而起伏,於此,金屬層122於相對第一透明導電層121的一側的表面122s形成複數第一突起T1。於一些實施例中,由於金屬層122是沿著第一透明導電層121的表面121s而起伏,所以第一突起T1的形狀大致上與微米或奈米級顆粒P1的形狀相同,可以是但不限於是球形、尖形、塊形或桿形等。於另一些實施例中,且第一突起T1的尺寸介於10nm至1000nm之間。當焊料140施加於連接電極120上時,焊料140與金屬層122的表面122s接觸。依此,金屬層122的表面122s的第一突起T1中的複數個(例如是全部的第一突起T1或是部分的第一突起T1)可以嵌入焊料140的底部。即,金屬層122的表面122s與焊料140接觸的區域中的微米或奈米級顆粒P1會嵌入焊料140的底部。
在又一些實施例中,除了第一透明導電層121與金屬層122之外,連接電極120可以更包括第二透明導電層123。於此一實施例中,如圖6所繪示,金屬層122位於第一透明導電層121與第二透明導電層123之間,而第二透明導電層123與金屬層122連接且位於電路基板110與金屬層122之間。換言之,連接電極120可以更包括依序形成於電路基板110上
的第二透明導電層123、金屬層122及第一透明導電層121。當焊料140施加於連接電極120上時,焊料140仍與第一透明導電層121的表面121s接觸。依此,第一透明導電層121的表面121s的微米或奈米級顆粒P1中的複數個可以嵌入焊料140的底部。
此外,於一些實施例中,電子組件100可視產品需求而選擇性包括保護層150。如圖7所繪示,詳細來說,保護層150用以保護第一透明導電層121的表面121s的複數個微米或奈米級顆粒P1。保護層150位於第一透明導電層121之上且覆蓋第一透明導電層121的表面121s,因此保護層150覆蓋此些微米或奈米級顆粒P1而沿著第一透明導電層121的表面121s而起伏,於此,保護層150於相對第一透明導電層121的一側的表面形成複數微結構M1。於另一些實施例中,由於保護層150是沿著第一透明導電層121的表面121s而起伏,所以微結構M1的形狀大致上與微米或奈米級顆粒P1的形狀相同,可以是但不限於是球形、尖形、塊形或桿形等。於另一些實施例中,微結構M1的尺寸介於10nm至1000nm之間。
值得說明的是,在一些實施例中,保護層150可以形成在不同實施態樣的連接電極120上。不過,在又一些實施例中,連接電極120上也可以不用形成保護層150。
於一些實施例中,保護層150的材料可以是但不限於透明導電材料,例如是氧化鋅、氧化銦鋅、氧化鎵鋅、氧化鋅錫、氧化銦錫等。於本實施例中,透明導電材料是氧化銦鎵鋅。此外,保護層150的材料可以與第一透明導電層121的材料相同,也可以與第一透明導電層121的材料不同。不過,本發明並不對此加以限制。
在連接電極120的另一些實施例中,如圖8所繪示,金屬層122位於第一透明導電層121與第二透明導電層123之間,第二透明導電層123位於金屬層122之上,而第一透明導電層121與金屬層122連接且位於電路基板110與金屬層122之間。換言之,連接電極120可以更包括依序形成於電路基板110上的第一透明導電層121、金屬層122及第二透明導電層123。由於金屬層122隨著覆蓋第一透明導電層121的表面121s的此些微米或奈米級顆粒P1而起伏,於此,金屬層122於相對第一透明導電層121的一側的表面122s形成複數第一突起T1。而且,由於第二透明導電層123隨著覆蓋金屬層122的表面122s的此些第一突起T1而起伏,於此,第二透明導電層123於相對金屬層122的一側的表面123a形成複數第二突起T2。
在一些實施例中,由於金屬層122是沿著第一透明導電層121的表面121s而起伏,所以第一突起T1的形狀大致上與微米或奈米級顆粒P1的形狀相同,可以是但不限於是球形、尖形、塊形或桿形。在一些實施例中,且第一突起T1的尺寸介於10nm至1000nm之間。此外,由於第二透明導電層123是沿著金屬層122的表面122s而起伏,所以第二突起T2的形狀大致上與第一突起T1的形狀相同,且第二突起T2的尺寸介於10nm至1000nm之間。當焊料140施加於連接電極120上時,焊料140與第二透明導電層123的表面123s接觸。依此,第二透明導電層123的表面123s的第二突起T2中的複數個可以嵌入焊料140的底部。
圖9為本發明一實施例的電子組件的製造方法的流程圖。請參閱圖9,電子組件的製造方法包括提供一電路基板110(步驟S1)、形成連接電極120於電路基板110上(步驟S2)、形成焊料140於連接電極120之上
(步驟S3)、轉置微元件130於焊料140上(步驟S4)以及以焊料140固著微元件130(步驟S5)。其中,連接電極120之相對電路基板110的一側的表面具有複數微突起,並且連接電極120具有第一透明導電層121。
於步驟S1中,在一些實施例中,電路基板110可以是但不限於主動元件陣列基板,其可包括底板111、主動元件TFT及具有接觸窗W1的鈍化層112。
在一些實施例中,步驟S2包括形成第一透明導電薄膜121a於電路基板110上(步驟S21a)、圖案化第一透明導電薄膜121a以形成第一透明導電圖案121b(步驟S21b)、對第一透明導電圖案121b進行非完全退火(步驟S21c)、以及蝕刻第一透明導電圖案121b的相對電路基板110的一側的表面121s以形成一第一透明導電層(步驟S21d)。
於步驟S21a的一些實施例中,如圖10所繪示,可透過蒸鍍法(Evaporation)、化學氣相沈積法(Chemical vapor deposition,CVD)或濺鍍法(sputtering)等方法沉積第一透明導電材料於電路基板110上,以形成第一透明導電薄膜121a。值得說明的是,第一透明導電材料可以是氧化鋅、氧化銦鋅、氧化鎵鋅、氧化鋅錫、氧化銦錫等。於本實施例中,第一透明導電材料是氧化銦鎵鋅。不過,本發明並不對此加以限制。
於步驟S21b的一些實施例中,如圖11所繪示,經由微影蝕刻製程將整層的第一透明導電薄膜121a圖案化,以形成島狀的第一透明導電圖案121b。
於步驟S21c的一些實施例中,對第一透明導電圖案121b進行非完全退火(或稱為不完全退火)(subcritical annealing),使得第一透明
導電圖案121b尚未完全轉為結晶化結構而呈現多晶結構。於一些實施例中,退火溫度介於150度(℃)至180度(℃)之間,且退火時間介於5分鐘至120分鐘。
於步驟S21d的一些實施例中,如圖12所繪示,對第一透明導電圖案121b的表面進行表面粗糙化處理。可以透過浸泡或是噴灑等方式在第一透明導電圖案121b的表面施以化學溶液來蝕刻。其中,蝕刻處理時間大約是60秒至70秒之間。化學溶液可以是酸性溶液或鹼性溶液,例如是但不限於草酸(oxalic acid)、鹽酸(hydrochloric acid)、硝酸(nitric acid)、ITO蝕刻液、或是其兩者以上之混和溶液。依此,第一透明導電圖案121b的表面經由粗糙化處理後形成第一透明導電層121,且第一透明導電層121的相對電路基板110的一側的表面121s形成此些微米或奈米級顆粒P1。於此實施例中,此些微米或奈米級顆粒P1即為連接電極120之複數個微突起,用以增加後續所施加的焊料140與連接電極120之間的接觸面積以及附著力。
於步驟S3中,如圖13所繪示,將焊料140施加於連接電極120的第一透明導電層121之上。
於步驟S4中,如圖14所繪示,將微元件130轉置於焊料140上。於一些實施例中,可以透過轉置組件200拾取至少一微元件130放置於形成焊料140上。
於一些實施例中,請參閱圖14及圖15,步驟S5包括熔融焊料140(步驟S51)以及固化熔融的焊料140以使微元件130透過焊料140固著於連接電極120上(步驟S52)。
於步驟S51中,請參閱圖14,透過提高溫度以使焊料140呈現熔融狀態,使得熔融的焊料140可以陷入此些微米或奈米級顆粒P1中的複數者之間。
於步驟S52中,請參閱圖15,透過降溫以使熔融的焊料140得以固化,第一透明導電層121的表面121s的微米或奈米級顆粒P1中的複數個可以嵌入焊料140的底部,而焊料140的頂部固著於微元件130的底面,以致而微元件130能夠透過焊料140而固著於連接電極120上。依此,增加焊料140與連接電極120之間的接觸面積以及附著力。
須說明的是,連接電極120的結構也可以是雙層以上之疊層。
在另一些實施例中,請參閱圖16以及再次配合參閱圖4。
於一實施例中,步驟S2可以更包括形成金屬薄膜於電路基板上(步驟S22a)以及圖案化金屬薄膜以形成金屬層(步驟S22b)。其中,步驟S22a以及步驟S22b在形成第一透明導電層121(步驟S21a、S21b、S21c及S21d)之前。換言之,先於電路基板110上形成金屬層122,再於金屬層122上形成第一透明導電層121。以下詳細說明。
於步驟S22a中,可透過噴塗(spray)或濺鍍法等方法沉積金屬材料於電路基板110上,以形成整層的金屬薄膜。
接著,於步驟S22b中,經由微影蝕刻製程將整層的金屬薄膜圖案化,以形成島狀的金屬層122。
接下來,在金屬層122上進行步驟S21a、S21b、S21c及S21d,以在金屬層122上形成第一透明導電層121。步驟S21a、S21b、S21c及S21d與前述大致相同,故於此不再贅述。依此,金屬層122位於電路基
板110與第一透明導電層121之間。
接著,在步驟S2之後,可以接續進行步驟S3、步驟S4及步驟S5,焊料140可以與連接電極120的第一透明導電層121的表面121s接觸,因此於熔融時,熔融的焊料140可以陷入此些微米或奈米級顆粒P1中的複數者之間。當熔融的焊料140固化後,此些微米或奈米級顆粒P1中的複數個即嵌入焊料140的底部,而焊料140的頂部固著於微元件130的底面,以致微元件130能夠透過焊料140固著於連接電極120上。
承此,在連接電極120的又一些實施例中,其中,連接電極120的金屬層122係位於第一透明導電層121上且覆蓋第一透明導電層121的表面121s。圖17為本發明又一實施例的連接電極120的製造方法的流程圖。請參閱圖17以及再次配合參閱圖5。
於此一實施例,步驟S22b在步驟S21a、S21b、S21c及S21d之後。換言之,先於電路基板110上形成第一透明導電層121,再於電路基板110及第一透明導電層121上形成金屬層122。於此,金屬層122於相對第一透明導電層121的一側的表面122s形成複數第一突起T1。其中,由於金屬層122是沿著第一透明導電層121的表面121s而起伏,因此金屬層122於相對第一透明導電層121的一側的表面122s形成複數個與微米或奈米級顆粒P1的形狀相同的第一突起T1。
接著,在進行步驟S2之後,可以接續進行步驟S3、步驟S4及步驟S5,焊料140可以與連接電極120的金屬層122的表面122s接觸,且熔融的焊料140可以陷入此些第一突起T1中的複數者之間,亦即此些第一突起T1中的複數個可以嵌入焊料140的底部。當熔融的焊料140固化後,
微元件130能夠透過焊料140固著於連接電極120上。
在又一些實施例中,除了第一透明導電層121與金屬層122之外,連接電極120可以更包括第二透明導電層123。其中,金屬層122位於第一透明導電層121與第二透明導電層123之間,而第二透明導電層123與金屬層122連接且位於電路基板110與金屬層122之間。圖18為本發明另一實施例的連接電極120的製造方法的流程圖。請參閱圖18以及再次配合參閱圖6。
於此一實施例,步驟S2可以更包括形成第二透明導電薄膜於電路基板上(步驟S23a)以及圖案化第二透明導電薄膜以形成第二透明導電層123(步驟S23b)。其中,於步驟S2中,先進行步驟S23a以及步驟S23b,接著進行步驟S22a以及步驟S22b,而後再進行步驟S21a、S21b、S21c及S21d。換言之,先於電路基板110上形成第二透明導電層123,再於第二透明導電層123上形成金屬層122,而後於金屬層122上形成第一透明導電層121。以下詳細說明。
於步驟S23a中,可透過蒸鍍法(Evaporation)、化學氣相沈積法(Chemical vapor deposition,CVD)或濺鍍法(sputtering)等方法沉積第二透明導電材料於電路基板110上,以形成第二透明導電薄膜122a。需說明的是,第二透明導電材料可以與第一透明導電材料相同,也可以與第一透明導電材料不同。
接著,於步驟S23b中,經由微影蝕刻製程將整層的第二透明導電薄膜圖案化,以形成島狀的第二透明導電層123。
接下來,在第二透明導電層123上進行步驟S22a、S22b、
S21a、S21b、S21c及S21d,以在第二透明導電層123上形成金屬層122且在金屬層122上形成第一透明導電層121。步驟S22a、S22b、S21a、S21b、S21c及S21d與前述大致相同,故於此不再贅述。依此,金屬層122位於電路基板110與第一透明導電層121之間,且第二透明導電層123與電路基板110接觸。於此,包括有依序形成於電路基板110上的第二透明導電層123、金屬層122及第一透明導電層121的連接電極120大致上已完成。
接著,在步驟S2之後,可以接續進行步驟S3、步驟S4及步驟S5,焊料140可以與連接電極120的第一透明導電層121的表面121s接觸,且熔融的焊料140可以陷入此些微米或奈米級顆粒P1中的複數者之間,亦即此些微米或奈米級顆粒P1中的複數個可以嵌入焊料140的底部。當熔融的焊料140固化後,微元件130能夠透過焊料140固著於連接電極120上。
另外,於另一些實施例,電子組件的製造方法可以視產品需求而選擇性包括形成保護薄膜於第一透明導電層121的表面121s上(步驟SS1)以及圖案化保護薄膜以形成保護層150(步驟SS2)。請再參閱圖18以及配合參閱圖7。其中,先進行步驟S2,接著,在進行步驟SS1及步驟SS2,而後再進行步驟S3、S4、S5。換言之,先於電路基板110上形成連接電極120後,再於連接電極120的第一透明導電層121上形成保護層150,而後再接續於保護層150上形成焊料140、轉置微元件及以焊料140固著微元件130。以下詳細說明。
於步驟SS1中,可透過蒸鍍法、化學氣相沈積法或濺鍍法等方法沉積透明導電材料於連接電極120的第一透明導電層121上,以形成
保護薄膜。需說明的是,保護層的材料可以與第一透明導電材料相同,也可以與第一透明導電材料不同。接著,於步驟SS2中,經由微影蝕刻製程將整層的保護薄膜圖案化,以形成島狀的保護層150。此外,步驟SS1及步驟SS2係為選擇性的步驟。值得說明的是,在一些實施例中,步驟SS1及步驟SS2可以將保護層150形成在不同實施態樣的連接電極120上。不過,在另一些實施例中,電子組件的製造方法可以不包括步驟SS1及步驟SS2。也就是說,連接電極120上也可以不用形成保護層150。
此外,在連接電極120的另一些實施例中,其中,連接電極120的金屬層122位於第一透明導電層121與第二透明導電層123之間,第二透明導電層123位於金屬層122之上,而第一透明導電層121與金屬層122連接且位於電路基板110與金屬層122之間。圖19為本發明又一實施例的連接電極120的製造方法的流程圖。請參閱圖19以及再次配合參閱圖8。
於此一實施例,步驟S23a以及步驟S23b在步驟S22a、步驟S22b、步驟S21a、步驟S21b、步驟S21c及步驟S21d之後。換言之,先於電路基板110上形成第一透明導電層121,再於電路基板110及第一透明導電層121上形成金屬層122,而後在於金屬層122上形成第二透明導電層123。於此,金屬層122於相對第一透明導電層121的一側的表面122s形成複數第一突起T1。而且,由於第二透明導電層123隨著覆蓋金屬層122的表面122s的此些第一突起T1而起伏,於此,第二透明導電層123於相對金屬層122的一側的表面123a形成複數第二突起T2。
其中,由於金屬層122是沿著第一透明導電層121的表面121s而起伏,因此金屬層122於相對於第一透明導電層121的一側的表面
122s形成複數個與微米或奈米級顆粒P1的形狀相同的第一突起T1。而且,由於第二透明導電層123是沿著金屬層122的表面122s而起伏,因此第二透明導電層123於相對於金屬層122一側的表面123a形成複數個與第一突起T1的形狀相同的第二突起T2。
接著,在步驟S2之後,可以接續進行步驟S3、步驟S4及步驟S5,焊料140可以與連接電極120的第二透明導電層123的表面123s接觸,且熔融的焊料140可以陷入此些第一突起T2中的複數者之間,亦即此些第一突起T2中的複數個可以嵌入焊料140的底部。當熔融的焊料140固化後,微元件130能夠透過焊料140固著於連接電極120上。
圖20為本發明一實施例的轉置組件的結構剖面示意圖。請參閱圖20,轉置組件200包括彈性吸頭210及幫浦件220,其中幫浦件220與彈性吸頭210耦接。
在此實施例中,彈性吸頭210具有第一表面210a以及相對於第一表面210a的第二表面210b。其中,第一表面210a具有至少一凸部211,而第二表面210b為一大致平坦表面。此外,第一表面210a更具有至少一通孔H1,且各通孔H1係由彈性吸頭200的第一表面210a穿過各凸部211而貫穿至彈性吸頭200的第二表面210b。換言之,各通孔H1係位於對應凸部211處且貫穿凸部211。
在一些實施例中,彈性吸頭210可以是藉由在模具(未繪示)內灌注高分子材料並且塑型而成的。其中,模具可以是兩個具有不同微結構且對向設置的基板。具體來說,可以透過微影蝕刻製程在兩個矽基板的表面分別形成凹槽以及凸柱,且凹槽的槽寬大於凸柱的柱寬。將具有凹槽
的矽基板以及具有凸柱的矽基板相對,並且使凸柱與凹槽對位以及使凸柱的頂面抵觸凹槽的槽底面。而後,於兩矽基板間灌注高分子材料,大致上即可形成彈性吸頭210。須說明的是,此兩對向設置的矽基板之間的空隙極為彈性吸頭210的形狀,且矽基板上的凸柱的柱寬即為通孔H1的孔徑。
在一些實施例中,彈性吸頭210的材料可以是但不限於具有黏性及彈性的高分子有機矽化合物材料,例如為聚二甲基矽氧烷(Polydimethylsiloxane,PDMS)或模塑矽氧樹脂(Moldable Silicone,MS)等柔軟的材料。
幫浦件220與彈性吸頭210的平坦的第二表面210b耦接。於一些實施例中,彈性吸頭210可藉由其黏性而黏附於幫浦件220,以使彈性吸頭210的第二表面210b耦接於幫浦件220
其中,幫浦件220具有至少一氣孔F1,並且氣孔F1能與通孔H1連通。具體來說,幫浦件220能夠藉由氣孔F1流通氣流,也就是說,可以將空氣經由氣孔F1而抽取氣體或是吹送氣體。須說明的是,氣孔F1的數量與位置並不一定與通孔H1的數量和位置一致。當幫浦件220在抽取氣體或是吹送氣體時,氣體能夠經由氣孔F1及通孔H1而流通。
圖21為本發明一實施例的微元件的轉置方法的流程圖。請參閱圖21以及配合參閱圖22至圖25。微元件的轉置方法可以包括形成焊料140於連接電極120上(步驟S3)、轉置微元件130於焊料140上(步驟S4)、以焊料140固著微元件130於連接電極120上(步驟S5)、驅動幫浦件220以通入氣體至此些通孔H1(步驟S6)以及分離微元件130與彈性吸頭210(步驟S7)。其中,步驟S3、S4及S5與前述大致相同,故相同的說明於此些實
施例中不再贅述。
首先,如圖22所繪示,於步驟S3中,將焊料140施加於連接電極120之上。為了便於說明,於圖22中僅簡單繪示連接電極120,而省略其分層。其中,焊料140可視不同實施例的連接電極120而與連接電極120的第一透明導電層121的複數微米或奈米級顆粒P1、金屬層122的複數第一突起T1或者是第二透明導電層123的複數第二突起T2接觸。
接著,如圖23所繪示,在其中一些實施例中,步驟S4可以更包括透過轉置組件200拾取微元件130(步驟S41)以及透過轉置組件200將拾取的微元件130移動於焊料上(步驟S42)。詳細來說,於步驟S41中,將轉置組件200移動到微元件130的上方,使轉置組件200的彈性吸頭210的各凸部211對應各個微元件130。接著,轉置組件200垂直向下移動,使得彈性吸頭210的各凸部211接觸各個微元件130,以黏取各微元件130。於其中又一些實施例中,此時,幫浦件220可以產生負壓以透過氣孔F1抽取氣體,使得氣體可以在氣孔F1及通孔H1中流通,從而除了彈性吸頭210的黏著力之外,微元件130可以更透過幫浦件220的吸力而更佳地附著於各凸部211。
接著,如圖24所繪示,於步驟S42中,轉置組件200可以移動所黏取及/或吸取的微元件130且放置在形成有焊料140的連接電極120上。
接著,進行步驟S5,請再次參閱圖24及配合參閱圖14、圖15。須說明的是,步驟S51及S51與前述大致相同,故於此不再贅述。其中,熔融的焊料140可視不同實施例的連接電極120而陷入連接電極120的
第一透明導電層121的複數微米或奈米級顆粒、金屬層122的複數第一突起T1或者是第二透明導電層123的複數第二突起T2之間。換言之,第一透明導電層121的微米或奈米級顆粒P1、金屬層122的複數第一突起T1或者是第二透明導電層123的複數第二突起T2中的複數個可以嵌入焊料140的底部,從而增加焊料140與連接電極120之間的接觸面積以及附著力。依此,微元件130能與電路基板110上的連接電極120電性連接。
接著,於步驟S6中,驅動幫浦件220以將氣體由氣孔F1通入至此些通孔H1,使得彈性吸頭210的各凸部211與各微元件130之間產生小縫隙。換言之,彈性吸頭210的各凸部211與各微元件130些微地分開,藉以便於使彈性吸頭210與微元件130之間分離。
而後,於步驟S7中,如圖25所繪示,於氣體的通入過程中,將微元件130與彈性吸頭210的各凸部211分離。依此,轉置組件200離開微元件130時,不會拉扯微元件130而致使微元件130發生歪斜、位移或是脫落等情況。
綜上所述,本發明實施例的電子組件、轉置組件、電子組件的製造方法及微元件的轉置方法,其透過在連接電極的表面形成複數微突起以使焊料能更穩固地將轉置的微元件與連接電極相互固著。依此,連接電極表面的複數微突起嵌入於焊料的底部,藉以增加焊料與連接電極之間的接觸面積以及附著力。因此,能避免轉置組件於轉置過程中離開微元件時,因焊料與連接電極接著不佳而使微元件歪斜、位移或是脫落等情況發生,進而能提高電子組件的良率。在一些實施例中,本發明實施例的轉置組件及微元件的轉置方法,其透過彈性吸頭來黏取微元件,由於彈性吸頭
具有黏性及彈性而且為柔軟材料,因此彈性吸頭不易與微元件碰撞而導致微元件受損。在一些實施例中,本發明實施例的轉置組件及微元件的轉置方法,更可透過於通孔中抽取氣體或是吹送氣體以利於彈性吸頭更加地拾取或放置微元件。
雖然本發明的技術內容已經以較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神所作些許之更動與潤飾,皆應涵蓋於本發明的範疇內,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100:電子組件
110:電路基板
111:底板
112:鈍化層
120:連接電極
130:微元件
140:焊料
A1:接觸區段
A2:貫穿區段
W1:接觸窗
D1:汲極
TFT:主動元件
Claims (28)
- 一種電子組件,包括:一電路基板;一連接電極,位於該電路基板上,其中該連接電極具有一第一透明導電層,以及該第一透明導電層的一表面位於相對該電路基板的一側且具有複數個微米或奈米級顆粒;一微元件,與該連接電極電性連接;以及一焊料,位於該連接電極與該微元件之間,固著該微元件於該連接電極上,其中該些微米或奈米級顆粒中的複數個嵌入該焊料的底部。
- 如請求項1所述的電子組件,其中各該微米或奈米級顆粒的尺寸介於10nm至1000nm之間。
- 如請求項1所述的電子組件,其中該連接電極更包括一金屬層,且該金屬層位於該電路基板與該第一透明導電層之間。
- 如請求項3所述的電子組件,其中該連接電極更包括一第二透明導電層,且該第二透明導電層位於該電路基板與該金屬層之間。
- 如請求項4所述的電子組件,更包括一保護層,該保護層覆蓋該第一透明導電層的該表面,且該保護層覆蓋該些微米或奈米級顆粒而沿著該第一透明導電層的該表面而起伏。
- 如請求項1所述的電子組件,其中該連接電極更包括一金屬層,覆蓋該第一透明導電層的該表面,且該金屬層隨著覆蓋該些微米或奈米級顆粒而於相對該第一透明導電層的一側的表面形成複數第一突起。
- 如請求項6所述的電子組件,其中各該第一突起的尺寸介於 10nm至1000nm之間。
- 如請求項6或7所述的電子組件,其中該些第一突起中的複數個嵌入該焊料的底部。
- 如請求項6所述的電子組件,其中該連接電極更包括一第二透明導電層,覆蓋該金屬層的該表面,其中該第二透明導電層隨著覆蓋該些第一突起而於相對該金屬層的一側的表面形成複數第二突起。
- 如請求項9所述的電子組件,其中各該第二突起的尺寸介於10nm至1000nm之間。
- 如請求項9或10所述的電子組件,其中該些第二突起中的複數個嵌入該焊料的底部。
- 如請求項1所述的電子組件,其中該表面透過非完全退火方法及蝕刻方法形成該些微米或奈米級顆粒。
- 如請求項12所述的電子組件,其中該非完全退火方法的退火溫度介於150度(℃)至180度(℃)之間且退火時間介於5分鐘至120分鐘。
- 如請求項1所述的電子組件,其中該電路基板包括:一底板;一主動元件,位於該底板上;以及一鈍化層,覆蓋於該底板與該主動元件上;其中,該連接電極包括:一接觸區段,對應該主動元件位於該鈍化層上;以及一貫穿區段,貫穿該鈍化層,該貫穿區段的一端耦接該接觸區段, 以及該貫穿區段的另一端耦接該主動元件。
- 一種電子組件的製造方法,包括:提供一電路基板;以及形成一連接電極於該電路基板上,其中該連接電極的相對於該電路基板的一側的一表面具有複數微突起,並且形成該連接電極於該電路基板上的步驟包括:形成一第一透明導電薄膜於一電路基板上;圖案化該第一透明導電薄膜以形成一第一透明導電圖案;對該第一透明導電圖案進行非完全退火;以及蝕刻該第一透明導電圖案的相對該電路基板的一側的表面以形成一第一透明導電層,以使第一透明導電層的表面具有複數個微米或奈米級顆粒。
- 如請求項15所述的電子組件的製造方法,更包括:形成一焊料於該連接電極之上;轉置一微元件於該焊料上;以及以該焊料固著該微元件。
- 如請求項16所述的電子組件的製造方法,其中該些微突起為該些微米或奈米級顆粒。
- 如請求項17所述的電子組件的製造方法,其中形成該連接電極於該電路基板上的步驟更包括:形成一金屬薄膜於該電路基板上;以及圖案化該金屬薄膜以形成位於該電路基板與該第一透明導電層之間 的一金屬層,其中該微元件透過該焊料固著於該第一透明導電層上,且該些微米或奈米級顆粒中的複數個嵌入該焊料的底部。
- 如請求項18所述的電子組件的製造方法,其中形成該連接電極於該電路基板上的步驟更包括:形成一第二透明導電薄膜於該電路基板上;以及圖案化該第二透明導電薄膜以形成位於該電路基板與該金屬層之間的一第二透明導電層。
- 如請求項19所述的電子組件的製造方法,更包括:形成一保護薄膜於該第一透明導電層與該電路基板上;以及圖案化該保護薄膜以形成位於該第一透明導電層的該表面上的一保護層,其中該保護層隨著覆蓋該些微米或奈米級顆粒而於相對該金屬層的一側的表面形成複數微結構,其中,該焊料形成於該保護層上,該些微突起為該些微結構,且該些微結構中的複數個嵌入該焊料的底部。
- 如請求項16所述的電子組件的製造方法,其中形成該連接電極於該電路基板上的步驟在形成該第一透明導電薄膜於該電路基板上的步驟之後,更包括:形成一金屬薄膜於該電路基板與該第一透明導電層上;以及圖案化該金屬薄膜以形成位於該第一透明導電層上的一金屬層,其中該金屬層隨著覆蓋該些微米或奈米級顆粒而於相對該第一透明導電層的一側的表面形成複數第一突起,該些微突起為該些第一突起,且該些第一突起中的複數個嵌入該焊料的底部。
- 如請求項16所述的電子組件的製造方法,其中形成該連接 電極於該電路基板上的步驟在形成該第一透明導電薄膜於該電路基板上的步驟之後,更包括:形成一金屬薄膜於該電路基板與該第一透明導電層上;圖案化該金屬薄膜以形成位於該第一透明導電層上的一金屬層,其中該金屬層隨著覆蓋該些微米或奈米級顆粒而於相對該第一透明導電層的一側的表面形成複數第一突起;形成一第二透明導電薄膜於該電路基板與該金屬層的該表面;以及圖案化該第二透明導電薄膜以形成位於該金屬層上的一第二透明導電層,其中該第二透明導電層隨著覆蓋該些第一突起而於相對該金屬層的一側的表面形成複數第二突起,其中,該焊料形成於該第二透明導電層上,該些微突起為該些第二突起,且該些第二突起中的複數個嵌入該焊料的底部。
- 如請求項16所述的電子組件的製造方法,其中以該焊料固著該微元件於該連接電極的步驟包括:熔融該焊料,以使熔融的該焊料陷入該些微突起中的複數者之間;以及固化熔融的該焊料以使該微元件透過該焊料固著於該連接電極上。
- 如請求項15至23中任一項所述的電子組件的製造方法,其中在對該第一透明導電圖案進行非完全退火的步驟中退火溫度介於150度(℃)至180度(℃)之間,退火時間介於5分鐘至120分鐘。
- 一種微元件的轉置方法,包括: 形成至少一焊料於至少一連接電極上,其中各該連接電極具有一第一透明導電層,並且該第一透明導電層的表面具有複數個微米或奈米級顆粒;透過一轉置組件拾取至少一微元件,其中該轉置組件包括一彈性吸頭以及一幫浦件,該彈性吸頭的一表面具有分別拾取該至少一微元件的至少一凸部,該彈性吸頭的另一表面耦接該幫浦件,該幫浦件具有至少一氣孔,該彈性吸頭具有連通該至少一氣孔的至少一通孔,並且各該通孔由該彈性吸頭的該表面穿過該至少一凸部中之一貫穿至該彈性吸頭的另一表面;透過該轉置組件將拾取的該至少一微元件移動於該至少一焊料上;以該至少一焊料將該至少一微元件固著於該至少一連接電極上,其中各該連接電極的該些微米或奈米級顆粒中的複數者嵌入對應的該焊料的底部;驅動該幫浦件以通入氣體至該至少一通孔;以及於該氣體的通入過程中,分離該至少一微元件與該彈性吸頭。
- 如請求項25所述的微元件的轉置方法,其中以該至少一焊料將該至少一微元件固著於該至少一連接電極上的步驟之後,更包括:熔融該至少一焊料,以使該些微米或奈米級顆粒中的複數者嵌入對應的該焊料的底部;以及固化該至少一焊料以使該至少一微元件透過該至少一焊料固著於該至少一連接電極上。
- 如請求項25所述的微元件的轉置方法,其中該彈性吸頭具 有黏性。
- 如請求項25所述的微元件的轉置方法,其中該彈性吸頭的材質為聚二甲基矽氧烷或模塑矽氧樹脂。
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