TWI686837B - 用於具有一帶電粒子束之傾斜或偏斜研磨操作之基準設計 - Google Patents

用於具有一帶電粒子束之傾斜或偏斜研磨操作之基準設計 Download PDF

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Publication number
TWI686837B
TWI686837B TW107137808A TW107137808A TWI686837B TW I686837 B TWI686837 B TW I686837B TW 107137808 A TW107137808 A TW 107137808A TW 107137808 A TW107137808 A TW 107137808A TW I686837 B TWI686837 B TW I686837B
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TW
Taiwan
Prior art keywords
sample
interest
ion beam
charged particle
images
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TW107137808A
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English (en)
Chinese (zh)
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TW201907437A (zh
Inventor
史東史黛西
李相勳
布雷克伍德傑佛瑞
西米德特麥可
金賢和
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美商Fei公司
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Publication of TW201907437A publication Critical patent/TW201907437A/zh
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Publication of TWI686837B publication Critical patent/TWI686837B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/226—Image reconstruction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Sampling And Sample Adjustment (AREA)
TW107137808A 2012-12-31 2013-12-30 用於具有一帶電粒子束之傾斜或偏斜研磨操作之基準設計 TWI686837B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261747515P 2012-12-31 2012-12-31
US201261747516P 2012-12-31 2012-12-31
US61/747,516 2012-12-31
US61/747,515 2012-12-31

Publications (2)

Publication Number Publication Date
TW201907437A TW201907437A (zh) 2019-02-16
TWI686837B true TWI686837B (zh) 2020-03-01

Family

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Family Applications (2)

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TW107137808A TWI686837B (zh) 2012-12-31 2013-12-30 用於具有一帶電粒子束之傾斜或偏斜研磨操作之基準設計
TW102149124A TWI643235B (zh) 2012-12-31 2013-12-30 用於具有一帶電粒子束之傾斜或偏斜硏磨操作之基準設計

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TW102149124A TWI643235B (zh) 2012-12-31 2013-12-30 用於具有一帶電粒子束之傾斜或偏斜硏磨操作之基準設計

Country Status (7)

Country Link
US (2) US10026590B2 (enExample)
EP (1) EP2939254A4 (enExample)
JP (1) JP6598684B2 (enExample)
KR (1) KR102148284B1 (enExample)
CN (1) CN105264635B (enExample)
TW (2) TWI686837B (enExample)
WO (1) WO2014106182A1 (enExample)

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JP7113613B2 (ja) * 2016-12-21 2022-08-05 エフ イー アイ カンパニ 欠陥分析
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CZ310048B6 (cs) * 2017-07-25 2024-06-19 Tescan Group, A.S. Způsob odstranění hmoty
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KR102618372B1 (ko) * 2018-10-23 2023-12-27 어플라이드 머티어리얼스, 인코포레이티드 대면적 기판들을 위한 집속 이온 빔 시스템
WO2020100179A1 (ja) * 2018-11-12 2020-05-22 株式会社日立ハイテク 画像形成方法及び画像形成システム
JP7192117B2 (ja) * 2018-11-22 2022-12-19 アプライド マテリアルズ インコーポレイテッド 基板上の限界寸法測定の方法、および基板上の電子デバイスを検査し、カッティングするための装置
US11158487B2 (en) * 2019-03-29 2021-10-26 Fei Company Diagonal compound mill
JP2021086793A (ja) * 2019-11-29 2021-06-03 株式会社日立ハイテク 荷電粒子ビームシステム、荷電粒子線装置における焦点位置を自動で探索する範囲を決定する方法、およびコンピュータシステムに、荷電粒子線装置における焦点位置を自動で探索する範囲を決定させるためのプログラムを記録した非一時的記憶媒体
KR102828411B1 (ko) 2020-03-13 2025-07-02 칼 짜이스 에스엠티 게엠베하 웨이퍼의 검사 볼륨을 단면 이미징하는 방법
DE102021201686A1 (de) * 2020-11-17 2022-05-19 Carl Zeiss Microscopy Gmbh Verfahren und Vorrichtung zum Präparieren einer mikroskopischen Probe aus einer Volumenprobe
US20240054669A1 (en) * 2020-12-15 2024-02-15 Asml Netherlands B.V. Apparatus and method for determining three dimensional data based on an image of a patterned substrate
CN114689630B (zh) 2020-12-30 2025-12-02 Fei公司 用于对三维特征进行成像的方法和系统
US12362130B2 (en) * 2021-02-15 2025-07-15 E.A. Fischione Instruments, Inc. System and method for uniform ion milling
US12056865B2 (en) * 2021-10-07 2024-08-06 Carl Zeiss Smt Gmbh Wafer-tilt determination for slice-and-image process
US20240153738A1 (en) * 2022-11-08 2024-05-09 Applied Materials Israel Ltd. Precision in stereoscopic measurements using a pre-deposition layer
EP4379348A1 (en) * 2022-11-30 2024-06-05 Fei Company Method for micromachining a biological sample for creating a lamella for analysis in a cryo-charged particle microscope
WO2024134744A1 (ja) * 2022-12-20 2024-06-27 株式会社日立ハイテク ビーム装置、ラメラ抽出装置、ラメラ観察システムおよびラメラ作製方法
US12451323B2 (en) 2023-04-06 2025-10-21 Applied Materials Israel Ltd. Flow for high resolution stereoscopic measurements
CN116337903B (zh) * 2023-04-11 2023-12-22 胜科纳米(苏州)股份有限公司 一种3dnada闪存垂直通道的超薄电镜样品及其制样方法
US12444022B2 (en) * 2023-06-30 2025-10-14 Fei Company Focus stacking applications for sample preparation

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US20080290291A1 (en) * 2007-05-22 2008-11-27 Hitachi High-Technologies Corporation Charged Particle Beam Processing Apparatus
US20100288925A1 (en) * 2005-04-06 2010-11-18 Edward Principe High-density FIB-SEM tomography via real-time imaging
US20120067718A1 (en) * 2009-03-31 2012-03-22 The University Of Surrey Method and apparatus for producing three dimensional nano and micro scale structures
JP2012146659A (ja) * 2011-01-12 2012-08-02 Carl Zeiss Nts Gmbh 試料を加工及び／又は解析するための粒子ビーム装置及び方法

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JP2012146659A (ja) * 2011-01-12 2012-08-02 Carl Zeiss Nts Gmbh 試料を加工及び／又は解析するための粒子ビーム装置及び方法

Also Published As

Publication number Publication date
KR20150102119A (ko) 2015-09-04
US20150357159A1 (en) 2015-12-10
CN105264635A (zh) 2016-01-20
KR102148284B1 (ko) 2020-08-26
JP2016503890A (ja) 2016-02-08
CN105264635B (zh) 2018-11-20
EP2939254A4 (en) 2016-09-07
TW201907437A (zh) 2019-02-16
WO2014106182A1 (en) 2014-07-03
US11315756B2 (en) 2022-04-26
TW201442054A (zh) 2014-11-01
TWI643235B (zh) 2018-12-01
JP6598684B2 (ja) 2019-10-30
US10026590B2 (en) 2018-07-17
EP2939254A1 (en) 2015-11-04
US20180301319A1 (en) 2018-10-18

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