KR102148284B1 - 하전 입자 비임을 이용한 경사지거나 비스듬한 밀 작업들을 위한 기준 설계 - Google Patents

하전 입자 비임을 이용한 경사지거나 비스듬한 밀 작업들을 위한 기준 설계 Download PDF

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KR102148284B1
KR102148284B1 KR1020157020830A KR20157020830A KR102148284B1 KR 102148284 B1 KR102148284 B1 KR 102148284B1 KR 1020157020830 A KR1020157020830 A KR 1020157020830A KR 20157020830 A KR20157020830 A KR 20157020830A KR 102148284 B1 KR102148284 B1 KR 102148284B1
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sample
charged particle
particle beam
workpiece
milling
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KR20150102119A (ko
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스테이시 스톤
이상훈
제프리 블랙우드
마이클 슈미트
김현화
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에프이아이 컴파니
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/226—Image reconstruction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Sampling And Sample Adjustment (AREA)
KR1020157020830A 2012-12-31 2013-12-30 하전 입자 비임을 이용한 경사지거나 비스듬한 밀 작업들을 위한 기준 설계 Active KR102148284B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261747515P 2012-12-31 2012-12-31
US201261747516P 2012-12-31 2012-12-31
US61/747,516 2012-12-31
US61/747,515 2012-12-31
PCT/US2013/078315 WO2014106182A1 (en) 2012-12-31 2013-12-30 Fiducial design for tilted or glancing mill operations with a charged particle beam

Publications (2)

Publication Number Publication Date
KR20150102119A KR20150102119A (ko) 2015-09-04
KR102148284B1 true KR102148284B1 (ko) 2020-08-26

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KR1020157020830A Active KR102148284B1 (ko) 2012-12-31 2013-12-30 하전 입자 비임을 이용한 경사지거나 비스듬한 밀 작업들을 위한 기준 설계

Country Status (7)

Country Link
US (2) US10026590B2 (enExample)
EP (1) EP2939254A4 (enExample)
JP (1) JP6598684B2 (enExample)
KR (1) KR102148284B1 (enExample)
CN (1) CN105264635B (enExample)
TW (2) TWI686837B (enExample)
WO (1) WO2014106182A1 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016002341A1 (ja) 2014-06-30 2016-01-07 株式会社 日立ハイテクノロジーズ パターン測定方法、及びパターン測定装置
TWI600053B (zh) * 2015-03-04 2017-09-21 國立中興大學 聚集游離裝置及質譜儀
US9619728B2 (en) 2015-05-31 2017-04-11 Fei Company Dynamic creation of backup fiducials
US9627176B2 (en) * 2015-07-23 2017-04-18 Fei Company Fiducial formation for TEM/STEM tomography tilt-series acquisition and alignment
WO2018020627A1 (ja) * 2016-07-28 2018-02-01 株式会社 日立ハイテクノロジーズ パターン測定方法、及びパターン測定装置
CN106353353A (zh) * 2016-10-31 2017-01-25 上海华虹宏力半导体制造有限公司 超级结沟槽底部定点分析方法
JP7113613B2 (ja) * 2016-12-21 2022-08-05 エフ イー アイ カンパニ 欠陥分析
DE102017212020B3 (de) * 2017-07-13 2018-05-30 Carl Zeiss Microscopy Gmbh Verfahren zur In-situ-Präparation und zum Transfer mikroskopischer Proben, Computerprogrammprodukt sowie mikroskopische Probe
CZ310048B6 (cs) * 2017-07-25 2024-06-19 Tescan Group, A.S. Způsob odstranění hmoty
US10731979B2 (en) * 2018-01-12 2020-08-04 Applied Materials Israel Ltd. Method for monitoring nanometric structures
US11244802B2 (en) * 2018-02-28 2022-02-08 Hitachi High-Tech Corporation Ion milling device and ion source adjusting method for ion milling device
US10811219B2 (en) 2018-08-07 2020-10-20 Applied Materials Israel Ltd. Method for evaluating a region of an object
KR102618372B1 (ko) * 2018-10-23 2023-12-27 어플라이드 머티어리얼스, 인코포레이티드 대면적 기판들을 위한 집속 이온 빔 시스템
WO2020100179A1 (ja) * 2018-11-12 2020-05-22 株式会社日立ハイテク 画像形成方法及び画像形成システム
JP7192117B2 (ja) * 2018-11-22 2022-12-19 アプライド マテリアルズ インコーポレイテッド 基板上の限界寸法測定の方法、および基板上の電子デバイスを検査し、カッティングするための装置
US11158487B2 (en) * 2019-03-29 2021-10-26 Fei Company Diagonal compound mill
JP2021086793A (ja) * 2019-11-29 2021-06-03 株式会社日立ハイテク 荷電粒子ビームシステム、荷電粒子線装置における焦点位置を自動で探索する範囲を決定する方法、およびコンピュータシステムに、荷電粒子線装置における焦点位置を自動で探索する範囲を決定させるためのプログラムを記録した非一時的記憶媒体
KR102828411B1 (ko) 2020-03-13 2025-07-02 칼 짜이스 에스엠티 게엠베하 웨이퍼의 검사 볼륨을 단면 이미징하는 방법
DE102021201686A1 (de) * 2020-11-17 2022-05-19 Carl Zeiss Microscopy Gmbh Verfahren und Vorrichtung zum Präparieren einer mikroskopischen Probe aus einer Volumenprobe
US20240054669A1 (en) * 2020-12-15 2024-02-15 Asml Netherlands B.V. Apparatus and method for determining three dimensional data based on an image of a patterned substrate
CN114689630B (zh) 2020-12-30 2025-12-02 Fei公司 用于对三维特征进行成像的方法和系统
US12362130B2 (en) * 2021-02-15 2025-07-15 E.A. Fischione Instruments, Inc. System and method for uniform ion milling
US12056865B2 (en) * 2021-10-07 2024-08-06 Carl Zeiss Smt Gmbh Wafer-tilt determination for slice-and-image process
US20240153738A1 (en) * 2022-11-08 2024-05-09 Applied Materials Israel Ltd. Precision in stereoscopic measurements using a pre-deposition layer
EP4379348A1 (en) * 2022-11-30 2024-06-05 Fei Company Method for micromachining a biological sample for creating a lamella for analysis in a cryo-charged particle microscope
WO2024134744A1 (ja) * 2022-12-20 2024-06-27 株式会社日立ハイテク ビーム装置、ラメラ抽出装置、ラメラ観察システムおよびラメラ作製方法
US12451323B2 (en) 2023-04-06 2025-10-21 Applied Materials Israel Ltd. Flow for high resolution stereoscopic measurements
CN116337903B (zh) * 2023-04-11 2023-12-22 胜科纳米(苏州)股份有限公司 一种3dnada闪存垂直通道的超薄电镜样品及其制样方法
US12444022B2 (en) * 2023-06-30 2025-10-14 Fei Company Focus stacking applications for sample preparation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080315088A1 (en) 2005-12-09 2008-12-25 Haruo Takahashi Composite charged-particle beam system
JP2009139132A (ja) * 2007-12-04 2009-06-25 Sii Nanotechnology Inc 試料加工方法および装置
JP2012146659A (ja) 2011-01-12 2012-08-02 Carl Zeiss Nts Gmbh 試料を加工及び／又は解析するための粒子ビーム装置及び方法
US20120286159A1 (en) * 2011-03-31 2012-11-15 Doenitz Dietmar Particle beam device having a detector arrangement

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3699334A (en) * 1969-06-16 1972-10-17 Kollsman Instr Corp Apparatus using a beam of positive ions for controlled erosion of surfaces
US5435850A (en) 1993-09-17 1995-07-25 Fei Company Gas injection system
US5851413A (en) 1996-06-19 1998-12-22 Micrion Corporation Gas delivery systems for particle beam processing
US6353222B1 (en) * 1998-09-03 2002-03-05 Applied Materials, Inc. Determining defect depth and contour information in wafer structures using multiple SEM images
JP2000097823A (ja) * 1998-09-24 2000-04-07 Canon Inc マーキング方法、マーキングしたマークの除去方法、並びにマークを利用した加工方法及び被加工物
NL1021376C1 (nl) * 2002-09-02 2004-03-03 Fei Co Werkwijze voor het verkrijgen van een deeltjes-optische afbeelding van een sample in een deeltjes-optisch toestel.
JP2004253232A (ja) * 2003-02-20 2004-09-09 Renesas Technology Corp 試料固定台
EP1501115B1 (en) 2003-07-14 2009-07-01 FEI Company Dual beam system
JP4486462B2 (ja) 2004-09-29 2010-06-23 日本電子株式会社 試料作製方法および試料作製装置
US7312448B2 (en) * 2005-04-06 2007-12-25 Carl Zeiss Nts Gmbh Method and apparatus for quantitative three-dimensional reconstruction in scanning electron microscopy
JP4293201B2 (ja) * 2006-04-25 2009-07-08 株式会社日立製作所 試料作製方法および装置
JP5039961B2 (ja) * 2007-04-24 2012-10-03 エスアイアイ・ナノテクノロジー株式会社 三次元画像構築方法
JP5117764B2 (ja) 2007-05-22 2013-01-16 株式会社日立ハイテクノロジーズ 荷電粒子ビーム加工装置
GB0905571D0 (en) * 2009-03-31 2009-05-13 Sec Dep For Innovation Univers Method and apparatus for producing three dimensional nano and micro scale structures
US9941096B2 (en) 2011-09-12 2018-04-10 Fei Company Glancing angle mill
US8502172B1 (en) 2012-06-26 2013-08-06 Fei Company Three dimensional fiducial
TWI607498B (zh) * 2012-10-05 2017-12-01 Fei公司 使用帶電粒子束曝露樣品中所關注特徵的方法及系統

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080315088A1 (en) 2005-12-09 2008-12-25 Haruo Takahashi Composite charged-particle beam system
JP2009139132A (ja) * 2007-12-04 2009-06-25 Sii Nanotechnology Inc 試料加工方法および装置
JP2012146659A (ja) 2011-01-12 2012-08-02 Carl Zeiss Nts Gmbh 試料を加工及び／又は解析するための粒子ビーム装置及び方法
US20120286159A1 (en) * 2011-03-31 2012-11-15 Doenitz Dietmar Particle beam device having a detector arrangement

Also Published As

Publication number Publication date
KR20150102119A (ko) 2015-09-04
US20150357159A1 (en) 2015-12-10
CN105264635A (zh) 2016-01-20
JP2016503890A (ja) 2016-02-08
CN105264635B (zh) 2018-11-20
TWI686837B (zh) 2020-03-01
EP2939254A4 (en) 2016-09-07
TW201907437A (zh) 2019-02-16
WO2014106182A1 (en) 2014-07-03
US11315756B2 (en) 2022-04-26
TW201442054A (zh) 2014-11-01
TWI643235B (zh) 2018-12-01
JP6598684B2 (ja) 2019-10-30
US10026590B2 (en) 2018-07-17
EP2939254A1 (en) 2015-11-04
US20180301319A1 (en) 2018-10-18

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