TWI643235B - 用於具有一帶電粒子束之傾斜或偏斜硏磨操作之基準設計 - Google Patents
用於具有一帶電粒子束之傾斜或偏斜硏磨操作之基準設計 Download PDFInfo
- Publication number
- TWI643235B TWI643235B TW102149124A TW102149124A TWI643235B TW I643235 B TWI643235 B TW I643235B TW 102149124 A TW102149124 A TW 102149124A TW 102149124 A TW102149124 A TW 102149124A TW I643235 B TWI643235 B TW I643235B
- Authority
- TW
- Taiwan
- Prior art keywords
- sample
- feature
- angle
- interest
- charged particle
- Prior art date
Links
- 239000002245 particle Substances 0.000 title claims abstract description 41
- 238000000227 grinding Methods 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 53
- 238000010884 ion-beam technique Methods 0.000 claims description 49
- 238000012545 processing Methods 0.000 claims description 12
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 abstract description 25
- 230000003993 interaction Effects 0.000 abstract description 5
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000000523 sample Substances 0.000 description 105
- 238000005259 measurement Methods 0.000 description 22
- 230000007547 defect Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 238000004458 analytical method Methods 0.000 description 10
- 238000003384 imaging method Methods 0.000 description 9
- 230000009977 dual effect Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 7
- 238000000151 deposition Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005459 micromachining Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 108010083687 Ion Pumps Proteins 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000011960 computer-aided design Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000003745 diagnosis Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012942 design verification Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000012284 sample analysis method Methods 0.000 description 1
- 238000004645 scanning capacitance microscopy Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 238000013024 troubleshooting Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
- H01J2237/221—Image processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
- H01J2237/226—Image reconstruction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2814—Measurement of surface topography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Sampling And Sample Adjustment (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261747516P | 2012-12-31 | 2012-12-31 | |
| US201261747515P | 2012-12-31 | 2012-12-31 | |
| US61/747,516 | 2012-12-31 | ||
| US61/747,515 | 2012-12-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201442054A TW201442054A (zh) | 2014-11-01 |
| TWI643235B true TWI643235B (zh) | 2018-12-01 |
Family
ID=51022112
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102149124A TWI643235B (zh) | 2012-12-31 | 2013-12-30 | 用於具有一帶電粒子束之傾斜或偏斜硏磨操作之基準設計 |
| TW107137808A TWI686837B (zh) | 2012-12-31 | 2013-12-30 | 用於具有一帶電粒子束之傾斜或偏斜研磨操作之基準設計 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107137808A TWI686837B (zh) | 2012-12-31 | 2013-12-30 | 用於具有一帶電粒子束之傾斜或偏斜研磨操作之基準設計 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10026590B2 (enExample) |
| EP (1) | EP2939254A4 (enExample) |
| JP (1) | JP6598684B2 (enExample) |
| KR (1) | KR102148284B1 (enExample) |
| CN (1) | CN105264635B (enExample) |
| TW (2) | TWI643235B (enExample) |
| WO (1) | WO2014106182A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI768494B (zh) * | 2019-11-29 | 2022-06-21 | 日商日立全球先端科技股份有限公司 | 帶電粒子束系統，決定自動搜尋帶電粒子線裝置中的焦點位置之範圍的方法，及記錄著用來令電腦系統決定自動搜尋帶電粒子線裝置中的焦點位置之範圍的程式之非暫態性記憶媒體 |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101957007B1 (ko) | 2014-06-30 | 2019-03-11 | 가부시키가이샤 히다치 하이테크놀로지즈 | 패턴 측정 방법 및 패턴 측정 장치 |
| TWI600053B (zh) * | 2015-03-04 | 2017-09-21 | 國立中興大學 | 聚集游離裝置及質譜儀 |
| US9619728B2 (en) * | 2015-05-31 | 2017-04-11 | Fei Company | Dynamic creation of backup fiducials |
| US9627176B2 (en) * | 2015-07-23 | 2017-04-18 | Fei Company | Fiducial formation for TEM/STEM tomography tilt-series acquisition and alignment |
| WO2018020627A1 (ja) * | 2016-07-28 | 2018-02-01 | 株式会社 日立ハイテクノロジーズ | パターン測定方法、及びパターン測定装置 |
| CN106353353A (zh) * | 2016-10-31 | 2017-01-25 | 上海华虹宏力半导体制造有限公司 | 超级结沟槽底部定点分析方法 |
| JP7113613B2 (ja) * | 2016-12-21 | 2022-08-05 | エフ イー アイ カンパニ | 欠陥分析 |
| DE102017212020B3 (de) * | 2017-07-13 | 2018-05-30 | Carl Zeiss Microscopy Gmbh | Verfahren zur In-situ-Präparation und zum Transfer mikroskopischer Proben, Computerprogrammprodukt sowie mikroskopische Probe |
| CZ310048B6 (cs) * | 2017-07-25 | 2024-06-19 | Tescan Group, A.S. | Způsob odstranění hmoty |
| US10731979B2 (en) * | 2018-01-12 | 2020-08-04 | Applied Materials Israel Ltd. | Method for monitoring nanometric structures |
| WO2019167165A1 (ja) * | 2018-02-28 | 2019-09-06 | 株式会社日立ハイテクノロジーズ | イオンミリング装置及びイオンミリング装置のイオン源調整方法 |
| US10811219B2 (en) * | 2018-08-07 | 2020-10-20 | Applied Materials Israel Ltd. | Method for evaluating a region of an object |
| KR102618372B1 (ko) * | 2018-10-23 | 2023-12-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 대면적 기판들을 위한 집속 이온 빔 시스템 |
| WO2020100179A1 (ja) * | 2018-11-12 | 2020-05-22 | 株式会社日立ハイテク | 画像形成方法及び画像形成システム |
| WO2020104031A1 (en) * | 2018-11-22 | 2020-05-28 | Applied Materials, Inc. | Method for critical dimension measurement on a substrate, and apparatus for inspecting and cutting an electronic device on the substrate |
| US11158487B2 (en) * | 2019-03-29 | 2021-10-26 | Fei Company | Diagonal compound mill |
| JP7719089B2 (ja) * | 2020-03-13 | 2025-08-05 | カール・ツァイス・エスエムティー・ゲーエムベーハー | ウェハ中の検査ボリュームの断面画像化の方法 |
| DE102021201686A1 (de) * | 2020-11-17 | 2022-05-19 | Carl Zeiss Microscopy Gmbh | Verfahren und Vorrichtung zum Präparieren einer mikroskopischen Probe aus einer Volumenprobe |
| US20240054669A1 (en) * | 2020-12-15 | 2024-02-15 | Asml Netherlands B.V. | Apparatus and method for determining three dimensional data based on an image of a patterned substrate |
| CN114689630B (zh) | 2020-12-30 | 2025-12-02 | Fei公司 | 用于对三维特征进行成像的方法和系统 |
| WO2022174187A2 (en) * | 2021-02-15 | 2022-08-18 | E.A. Fischione Instruments, Inc. | System and method for uniform ion milling |
| US12056865B2 (en) | 2021-10-07 | 2024-08-06 | Carl Zeiss Smt Gmbh | Wafer-tilt determination for slice-and-image process |
| US20240153738A1 (en) * | 2022-11-08 | 2024-05-09 | Applied Materials Israel Ltd. | Precision in stereoscopic measurements using a pre-deposition layer |
| EP4379348A1 (en) * | 2022-11-30 | 2024-06-05 | Fei Company | Method for micromachining a biological sample for creating a lamella for analysis in a cryo-charged particle microscope |
| JPWO2024134744A1 (enExample) * | 2022-12-20 | 2024-06-27 | ||
| US12451323B2 (en) * | 2023-04-06 | 2025-10-21 | Applied Materials Israel Ltd. | Flow for high resolution stereoscopic measurements |
| CN116337903B (zh) * | 2023-04-11 | 2023-12-22 | 胜科纳米(苏州)股份有限公司 | 一种3dnada闪存垂直通道的超薄电镜样品及其制样方法 |
| US12444022B2 (en) * | 2023-06-30 | 2025-10-14 | Fei Company | Focus stacking applications for sample preparation |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080290291A1 (en) * | 2007-05-22 | 2008-11-27 | Hitachi High-Technologies Corporation | Charged Particle Beam Processing Apparatus |
| US20120067718A1 (en) * | 2009-03-31 | 2012-03-22 | The University Of Surrey | Method and apparatus for producing three dimensional nano and micro scale structures |
| US20120205538A1 (en) * | 2011-01-12 | 2012-08-16 | Andreas Schertel | Particle beam device and method for processing and/or analyzing a sample |
| US20120286159A1 (en) * | 2011-03-31 | 2012-11-15 | Doenitz Dietmar | Particle beam device having a detector arrangement |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3699334A (en) * | 1969-06-16 | 1972-10-17 | Kollsman Instr Corp | Apparatus using a beam of positive ions for controlled erosion of surfaces |
| US5435850A (en) | 1993-09-17 | 1995-07-25 | Fei Company | Gas injection system |
| US5851413A (en) | 1996-06-19 | 1998-12-22 | Micrion Corporation | Gas delivery systems for particle beam processing |
| US6353222B1 (en) * | 1998-09-03 | 2002-03-05 | Applied Materials, Inc. | Determining defect depth and contour information in wafer structures using multiple SEM images |
| JP2000097823A (ja) * | 1998-09-24 | 2000-04-07 | Canon Inc | マーキング方法、マーキングしたマークの除去方法、並びにマークを利用した加工方法及び被加工物 |
| NL1021376C1 (nl) * | 2002-09-02 | 2004-03-03 | Fei Co | Werkwijze voor het verkrijgen van een deeltjes-optische afbeelding van een sample in een deeltjes-optisch toestel. |
| JP2004253232A (ja) * | 2003-02-20 | 2004-09-09 | Renesas Technology Corp | 試料固定台 |
| DE602004021750D1 (de) | 2003-07-14 | 2009-08-13 | Fei Co | Zweistrahlsystem |
| JP4486462B2 (ja) | 2004-09-29 | 2010-06-23 | 日本電子株式会社 | 試料作製方法および試料作製装置 |
| US7312448B2 (en) | 2005-04-06 | 2007-12-25 | Carl Zeiss Nts Gmbh | Method and apparatus for quantitative three-dimensional reconstruction in scanning electron microscopy |
| JP2007164992A (ja) * | 2005-12-09 | 2007-06-28 | Sii Nanotechnology Inc | 複合荷電粒子ビーム装置 |
| JP4293201B2 (ja) * | 2006-04-25 | 2009-07-08 | 株式会社日立製作所 | 試料作製方法および装置 |
| JP5039961B2 (ja) * | 2007-04-24 | 2012-10-03 | エスアイアイ・ナノテクノロジー株式会社 | 三次元画像構築方法 |
| JP5105281B2 (ja) * | 2007-12-04 | 2012-12-26 | エスアイアイ・ナノテクノロジー株式会社 | 試料加工方法および装置 |
| CN103797351B (zh) | 2011-09-12 | 2019-11-05 | Fei 公司 | 掠射角铣削 |
| US8502172B1 (en) | 2012-06-26 | 2013-08-06 | Fei Company | Three dimensional fiducial |
| JP6199979B2 (ja) | 2012-10-05 | 2017-09-20 | エフ・イ−・アイ・カンパニー | 傾斜ミリング保護のためのバルク付着 |
-
2013
- 2013-12-30 TW TW102149124A patent/TWI643235B/zh active
- 2013-12-30 EP EP13867985.7A patent/EP2939254A4/en not_active Withdrawn
- 2013-12-30 KR KR1020157020830A patent/KR102148284B1/ko active Active
- 2013-12-30 US US14/758,466 patent/US10026590B2/en active Active
- 2013-12-30 TW TW107137808A patent/TWI686837B/zh active
- 2013-12-30 JP JP2015550843A patent/JP6598684B2/ja active Active
- 2013-12-30 WO PCT/US2013/078315 patent/WO2014106182A1/en not_active Ceased
- 2013-12-30 CN CN201380074020.7A patent/CN105264635B/zh active Active
-
2018
- 2018-06-20 US US16/012,888 patent/US11315756B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080290291A1 (en) * | 2007-05-22 | 2008-11-27 | Hitachi High-Technologies Corporation | Charged Particle Beam Processing Apparatus |
| US20120067718A1 (en) * | 2009-03-31 | 2012-03-22 | The University Of Surrey | Method and apparatus for producing three dimensional nano and micro scale structures |
| US20120205538A1 (en) * | 2011-01-12 | 2012-08-16 | Andreas Schertel | Particle beam device and method for processing and/or analyzing a sample |
| US20120286159A1 (en) * | 2011-03-31 | 2012-11-15 | Doenitz Dietmar | Particle beam device having a detector arrangement |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI768494B (zh) * | 2019-11-29 | 2022-06-21 | 日商日立全球先端科技股份有限公司 | 帶電粒子束系統，決定自動搜尋帶電粒子線裝置中的焦點位置之範圍的方法，及記錄著用來令電腦系統決定自動搜尋帶電粒子線裝置中的焦點位置之範圍的程式之非暫態性記憶媒體 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6598684B2 (ja) | 2019-10-30 |
| KR20150102119A (ko) | 2015-09-04 |
| JP2016503890A (ja) | 2016-02-08 |
| US20180301319A1 (en) | 2018-10-18 |
| EP2939254A4 (en) | 2016-09-07 |
| CN105264635B (zh) | 2018-11-20 |
| CN105264635A (zh) | 2016-01-20 |
| EP2939254A1 (en) | 2015-11-04 |
| US11315756B2 (en) | 2022-04-26 |
| TW201907437A (zh) | 2019-02-16 |
| WO2014106182A1 (en) | 2014-07-03 |
| TW201442054A (zh) | 2014-11-01 |
| US10026590B2 (en) | 2018-07-17 |
| KR102148284B1 (ko) | 2020-08-26 |
| US20150357159A1 (en) | 2015-12-10 |
| TWI686837B (zh) | 2020-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI643235B (zh) | 用於具有一帶電粒子束之傾斜或偏斜硏磨操作之基準設計 | |
| US9941096B2 (en) | Glancing angle mill | |
| US10204762B2 (en) | Endpointing for focused ion beam processing | |
| JP5873227B2 (ja) | デコレーションを用いたスライス・アンド・ビュー | |
| US9412560B2 (en) | Bulk deposition for tilted mill protection | |
| TWI628702B (zh) | 高「高寬比」結構之分析 | |
| JP6644127B2 (ja) | 荷電粒子ビーム試料作製におけるカーテニングを低減させる方法およびシステム | |
| JP2010507782A (ja) | Ｓ／ｔｅｍのサンプルを作成する方法およびサンプル構造 | |
| JP2025537171A (ja) | 事前堆積層を用いた立体測定の精度向上 | |
| CN116930232A (zh) | 用于分析三维特征部的方法及系统 |