TWI685994B - 有機電場發光電晶體(二) - Google Patents
有機電場發光電晶體(二) Download PDFInfo
- Publication number
- TWI685994B TWI685994B TW104124106A TW104124106A TWI685994B TW I685994 B TWI685994 B TW I685994B TW 104124106 A TW104124106 A TW 104124106A TW 104124106 A TW104124106 A TW 104124106A TW I685994 B TWI685994 B TW I685994B
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- Prior art keywords
- type semiconductor
- semiconductor material
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- organic
- transistor
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- 0 *c(cc1)cc2c1[s]c(c1c3)c2[s-]c1ccc3I Chemical compound *c(cc1)cc2c1[s]c(c1c3)c2[s-]c1ccc3I 0.000 description 5
- MSIUQOWNDKIKSG-UHFFFAOYSA-N Cc1cc([s]c(C)c2)c2[s]1 Chemical compound Cc1cc([s]c(C)c2)c2[s]1 MSIUQOWNDKIKSG-UHFFFAOYSA-N 0.000 description 1
- NXCSDJOTXUWERI-UHFFFAOYSA-N c(cc1)cc2c1[s]c1c2[s]c2ccccc12 Chemical compound c(cc1)cc2c1[s]c1c2[s]c2ccccc12 NXCSDJOTXUWERI-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
- C07D495/04—Ortho-condensed systems
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1018—Heterocyclic compounds
- C09K2211/1025—Heterocyclic compounds characterised by ligands
- C09K2211/1092—Heterocyclic compounds characterised by ligands containing sulfur as the only heteroatom
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/18—Metal complexes
- C09K2211/185—Metal complexes of the platinum group, i.e. Os, Ir, Pt, Ru, Rh or Pd
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
Applications Claiming Priority (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462028401P | 2014-07-24 | 2014-07-24 | |
| US201462028397P | 2014-07-24 | 2014-07-24 | |
| US62/028,397 | 2014-07-24 | ||
| EP14425101.4A EP2978038A1 (en) | 2014-07-24 | 2014-07-24 | Organic electroluminescent transistor |
| EP14425100.6A EP2978037A1 (en) | 2014-07-24 | 2014-07-24 | Organic electroluminescent transistor |
| US62/028,401 | 2014-07-24 | ||
| EP14425101.4 | 2014-07-24 | ||
| EP14425100.6 | 2014-07-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201611369A TW201611369A (zh) | 2016-03-16 |
| TWI685994B true TWI685994B (zh) | 2020-02-21 |
Family
ID=55163856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104124106A TWI685994B (zh) | 2014-07-24 | 2015-07-24 | 有機電場發光電晶體(二) |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10964919B2 (enExample) |
| EP (1) | EP3172778B1 (enExample) |
| JP (1) | JP6742983B2 (enExample) |
| KR (1) | KR102515999B1 (enExample) |
| CN (2) | CN111146352B (enExample) |
| TW (1) | TWI685994B (enExample) |
| WO (1) | WO2016014980A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3257849A1 (en) | 2016-06-14 | 2017-12-20 | Solvay SA | Organic semiconductor composition and semiconducting layer obtained therefrom |
| CN108258117B (zh) * | 2016-12-28 | 2020-03-17 | 中南大学 | 一种稳定的高性能钙钛矿光电探测器及其制备方法 |
| CN111263985B (zh) * | 2017-10-23 | 2024-02-02 | 索尼公司 | 有机光电二极管中有机光电转换层的p活性材料 |
| KR102421769B1 (ko) * | 2017-11-13 | 2022-07-18 | 삼성디스플레이 주식회사 | 유기 발광 소자 및 이를 포함하는 유기 발광 표시장치 |
| WO2019139175A1 (en) * | 2018-01-09 | 2019-07-18 | Kyushu University, National University Corporation | Organic light-emitting field-effect transistor |
| CN109524564B (zh) * | 2018-11-23 | 2021-01-08 | 合肥鑫晟光电科技有限公司 | 一种有机发光晶体管、温感装置及其温度测试方法 |
| KR102122445B1 (ko) * | 2018-11-29 | 2020-06-15 | 동아대학교 산학협력단 | 저전압 구동형 발광 트랜지스터 |
| CN109801951B (zh) * | 2019-02-13 | 2022-07-12 | 京东方科技集团股份有限公司 | 阵列基板、电致发光显示面板及显示装置 |
| US20250338771A1 (en) * | 2022-03-30 | 2025-10-30 | Sony Group Corporation | Light-emitting element and electronic apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200924199A (en) * | 2007-08-30 | 2009-06-01 | Idemitsu Kosan Co | Organic thin-film transistor and organic thin-film light-emitting transistor |
| JP2009152355A (ja) * | 2007-12-20 | 2009-07-09 | Konica Minolta Holdings Inc | 有機薄膜トランジスタの製造方法、及び有機薄膜トランジスタ |
| TW201349606A (zh) * | 2012-02-27 | 2013-12-01 | E T C Srl | 具有分佈式發光性能之有機發光雙極性場效電晶體 |
| WO2014035842A1 (en) * | 2012-08-25 | 2014-03-06 | Polyera Corporation | Light-emitting transistors with improved performance |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5683823A (en) | 1996-01-26 | 1997-11-04 | Eastman Kodak Company | White light-emitting organic electroluminescent devices |
| US5747183A (en) | 1996-11-04 | 1998-05-05 | Motorola, Inc. | Organic electroluminescent light emitting material and device using same |
| JP2001319781A (ja) | 2000-05-02 | 2001-11-16 | Fuji Photo Film Co Ltd | 有機発光素子材料の選択方法及びその材料を用いた有機発光素子 |
| EP1609195B9 (en) | 2003-03-28 | 2011-08-31 | Michele Muccini | Organic electroluminescence devices |
| US7074502B2 (en) | 2003-12-05 | 2006-07-11 | Eastman Kodak Company | Organic element for electroluminescent devices |
| US20060158397A1 (en) * | 2005-01-14 | 2006-07-20 | Joon-Chul Goh | Display device and driving method therefor |
| KR100854907B1 (ko) * | 2005-01-19 | 2008-08-28 | 고쿠리츠다이가쿠호진 히로시마다이가쿠 | 신규한 축합 다환 방향족 화합물 및 그의 이용 |
| US8124964B2 (en) * | 2006-10-20 | 2012-02-28 | Nippon Kayaku Kabushiki Kaisha | Field-effect transistor |
| US8053260B2 (en) * | 2006-11-17 | 2011-11-08 | General Electric Company | Large-area lighting systems and methods of making the same |
| TWI335681B (en) | 2007-05-18 | 2011-01-01 | Ind Tech Res Inst | White light organic electroluminescent element device |
| JP5715336B2 (ja) * | 2007-06-20 | 2015-05-07 | 出光興産株式会社 | 多環系環集合化合物及びそれを用いた有機エレクトロルミネッセンス素子 |
| TWI322141B (en) | 2007-08-28 | 2010-03-21 | Nat Univ Tsing Hua | Host material for blue oled and white light emitting device utilizing the same |
| KR101716196B1 (ko) | 2009-02-27 | 2017-03-14 | 니폰 가야꾸 가부시끼가이샤 | 전계효과 트랜지스터 |
| CA2781432A1 (en) * | 2009-11-24 | 2011-06-03 | University Of Florida Research Foundation, Inc. | Method and apparatus for sensing infrared radiation |
| JP5843304B2 (ja) * | 2010-06-11 | 2016-01-13 | 山本化成株式会社 | 有機トランジスタ |
| US8643001B2 (en) * | 2010-12-23 | 2014-02-04 | Samsung Electronics Co. Ltd. | Semiconductor composition |
| ITMI20111446A1 (it) | 2011-07-29 | 2013-01-30 | E T C Srl | Transistor organico elettroluminescente |
| ITMI20111445A1 (it) * | 2011-07-29 | 2013-01-30 | E T C Srl | Transistor organico elettroluminescente a doppio gate |
| ITMI20111447A1 (it) | 2011-07-29 | 2013-01-30 | E T C Srl | Transistor organico elettroluminescente |
| WO2013039842A1 (en) | 2011-09-12 | 2013-03-21 | Polyera Corporation | Compounds having semiconducting properties and related compositions and devices |
| EP2911214B1 (en) * | 2014-02-20 | 2018-08-08 | Amorosi, Antonio | Multilayer structure of an OLET transistor |
| EP2978035A1 (en) * | 2014-07-24 | 2016-01-27 | E.T.C. S.r.l. | Organic electroluminescent transistor |
-
2015
- 2015-07-24 JP JP2017503880A patent/JP6742983B2/ja not_active Expired - Fee Related
- 2015-07-24 CN CN202010082093.2A patent/CN111146352B/zh not_active Expired - Fee Related
- 2015-07-24 KR KR1020177004783A patent/KR102515999B1/ko active Active
- 2015-07-24 TW TW104124106A patent/TWI685994B/zh not_active IP Right Cessation
- 2015-07-24 CN CN201580045055.7A patent/CN106575706A/zh active Pending
- 2015-07-24 WO PCT/US2015/042063 patent/WO2016014980A1/en not_active Ceased
- 2015-07-24 EP EP15745117.0A patent/EP3172778B1/en not_active Not-in-force
-
2017
- 2017-01-24 US US15/413,838 patent/US10964919B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200924199A (en) * | 2007-08-30 | 2009-06-01 | Idemitsu Kosan Co | Organic thin-film transistor and organic thin-film light-emitting transistor |
| JP2009152355A (ja) * | 2007-12-20 | 2009-07-09 | Konica Minolta Holdings Inc | 有機薄膜トランジスタの製造方法、及び有機薄膜トランジスタ |
| TW201349606A (zh) * | 2012-02-27 | 2013-12-01 | E T C Srl | 具有分佈式發光性能之有機發光雙極性場效電晶體 |
| WO2014035842A1 (en) * | 2012-08-25 | 2014-03-06 | Polyera Corporation | Light-emitting transistors with improved performance |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2016014980A1 (en) | 2016-01-28 |
| JP2017529688A (ja) | 2017-10-05 |
| US10964919B2 (en) | 2021-03-30 |
| US20170237042A1 (en) | 2017-08-17 |
| JP6742983B2 (ja) | 2020-08-19 |
| CN111146352A (zh) | 2020-05-12 |
| EP3172778A1 (en) | 2017-05-31 |
| EP3172778B1 (en) | 2018-10-03 |
| CN106575706A (zh) | 2017-04-19 |
| KR102515999B1 (ko) | 2023-03-29 |
| KR20170036732A (ko) | 2017-04-03 |
| TW201611369A (zh) | 2016-03-16 |
| CN111146352B (zh) | 2022-10-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |