TWI685994B - 有機電場發光電晶體（二） - Google Patents

有機電場發光電晶體（二） Download PDF

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Publication number
TWI685994B
TWI685994B TW104124106A TW104124106A TWI685994B TW I685994 B TWI685994 B TW I685994B TW 104124106 A TW104124106 A TW 104124106A TW 104124106 A TW104124106 A TW 104124106A TW I685994 B TWI685994 B TW I685994B
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TW
Taiwan
Prior art keywords
type semiconductor
semiconductor material
layer
organic
transistor
Prior art date
Application number
TW104124106A
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English (en)
Chinese (zh)
Other versions
TW201611369A (zh
Inventor
薇薇安 拜昂多
賈魯卡 金萊利
安卓亞 史蒂芬尼
米歇爾 穆奇尼
古多 度拉提
米歇爾 登提
哈肯 烏斯塔
陳曉燕
安東尼歐 菲奇提
Original Assignee
美商飛利斯有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP14425101.4A external-priority patent/EP2978038A1/en
Priority claimed from EP14425100.6A external-priority patent/EP2978037A1/en
Application filed by 美商飛利斯有限公司 filed Critical 美商飛利斯有限公司
Publication of TW201611369A publication Critical patent/TW201611369A/zh
Application granted granted Critical
Publication of TWI685994B publication Critical patent/TWI685994B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Organic Chemistry (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
TW104124106A 2014-07-24 2015-07-24 有機電場發光電晶體（二） TWI685994B (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US201462028401P 2014-07-24 2014-07-24
US201462028397P 2014-07-24 2014-07-24
US62/028,397 2014-07-24
EP14425100.6 2014-07-24
EP14425101.4A EP2978038A1 (en) 2014-07-24 2014-07-24 Organic electroluminescent transistor
EP14425100.6A EP2978037A1 (en) 2014-07-24 2014-07-24 Organic electroluminescent transistor
EP14425101.4 2014-07-24
US62/028,401 2014-07-24

Publications (2)

Publication Number Publication Date
TW201611369A TW201611369A (zh) 2016-03-16
TWI685994B true TWI685994B (zh) 2020-02-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW104124106A TWI685994B (zh) 2014-07-24 2015-07-24 有機電場發光電晶體（二）

Country Status (7)

Country Link
US (1) US10964919B2 (enExample)
EP (1) EP3172778B1 (enExample)
JP (1) JP6742983B2 (enExample)
KR (1) KR102515999B1 (enExample)
CN (2) CN106575706A (enExample)
TW (1) TWI685994B (enExample)
WO (1) WO2016014980A1 (enExample)

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EP3257849A1 (en) 2016-06-14 2017-12-20 Solvay SA Organic semiconductor composition and semiconducting layer obtained therefrom
CN108258117B (zh) * 2016-12-28 2020-03-17 中南大学 一种稳定的高性能钙钛矿光电探测器及其制备方法
US11770974B2 (en) * 2017-10-23 2023-09-26 Sony Corporation P active materials for organic photoelectric conversion layers in organic photodiodes
KR102421769B1 (ko) * 2017-11-13 2022-07-18 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 유기 발광 표시장치
WO2019139175A1 (en) * 2018-01-09 2019-07-18 Kyushu University, National University Corporation Organic light-emitting field-effect transistor
CN109524564B (zh) * 2018-11-23 2021-01-08 合肥鑫晟光电科技有限公司 一种有机发光晶体管、温感装置及其温度测试方法
KR102122445B1 (ko) * 2018-11-29 2020-06-15 동아대학교 산학협력단 저전압 구동형 발광 트랜지스터
CN109801951B (zh) * 2019-02-13 2022-07-12 京东方科技集团股份有限公司 阵列基板、电致发光显示面板及显示装置
CN118923225A (zh) * 2022-03-30 2024-11-08 索尼集团公司 发光元件和电子设备

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JP2009152355A (ja) * 2007-12-20 2009-07-09 Konica Minolta Holdings Inc 有機薄膜トランジスタの製造方法、及び有機薄膜トランジスタ
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Also Published As

Publication number Publication date
WO2016014980A1 (en) 2016-01-28
US10964919B2 (en) 2021-03-30
JP6742983B2 (ja) 2020-08-19
JP2017529688A (ja) 2017-10-05
US20170237042A1 (en) 2017-08-17
CN111146352A (zh) 2020-05-12
CN106575706A (zh) 2017-04-19
KR20170036732A (ko) 2017-04-03
EP3172778B1 (en) 2018-10-03
CN111146352B (zh) 2022-10-21
EP3172778A1 (en) 2017-05-31
TW201611369A (zh) 2016-03-16
KR102515999B1 (ko) 2023-03-29

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