CN106575706A - 有机电致发光晶体管 - Google Patents

有机电致发光晶体管 Download PDF

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Publication number
CN106575706A
CN106575706A CN201580045055.7A CN201580045055A CN106575706A CN 106575706 A CN106575706 A CN 106575706A CN 201580045055 A CN201580045055 A CN 201580045055A CN 106575706 A CN106575706 A CN 106575706A
Authority
CN
China
Prior art keywords
organic electroluminescent
type semiconductor
layer
transistor
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201580045055.7A
Other languages
English (en)
Chinese (zh)
Inventor
V·柏恩杜
G·吉纳拉利
A·思戴法尼
M·穆西尼
G·图拉蒂
M·单蒂
H·乌斯塔
陈晓燕
A·法彻蒂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
POLYERA CORP
Original Assignee
POLYERA CORP
ETC SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP14425101.4A external-priority patent/EP2978038A1/en
Priority claimed from EP14425100.6A external-priority patent/EP2978037A1/en
Application filed by POLYERA CORP, ETC SRL filed Critical POLYERA CORP
Priority to CN202010082093.2A priority Critical patent/CN111146352B/zh
Publication of CN106575706A publication Critical patent/CN106575706A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Organic Chemistry (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
CN201580045055.7A 2014-07-24 2015-07-24 有机电致发光晶体管 Pending CN106575706A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010082093.2A CN111146352B (zh) 2014-07-24 2015-07-24 有机电致发光晶体管

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US201462028401P 2014-07-24 2014-07-24
US201462028397P 2014-07-24 2014-07-24
US62/028,397 2014-07-24
EP14425100.6 2014-07-24
EP14425101.4A EP2978038A1 (en) 2014-07-24 2014-07-24 Organic electroluminescent transistor
EP14425100.6A EP2978037A1 (en) 2014-07-24 2014-07-24 Organic electroluminescent transistor
EP14425101.4 2014-07-24
US62/028,401 2014-07-24
PCT/US2015/042063 WO2016014980A1 (en) 2014-07-24 2015-07-24 Organic electroluminescent transistor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202010082093.2A Division CN111146352B (zh) 2014-07-24 2015-07-24 有机电致发光晶体管

Publications (1)

Publication Number Publication Date
CN106575706A true CN106575706A (zh) 2017-04-19

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201580045055.7A Pending CN106575706A (zh) 2014-07-24 2015-07-24 有机电致发光晶体管
CN202010082093.2A Expired - Fee Related CN111146352B (zh) 2014-07-24 2015-07-24 有机电致发光晶体管

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202010082093.2A Expired - Fee Related CN111146352B (zh) 2014-07-24 2015-07-24 有机电致发光晶体管

Country Status (7)

Country Link
US (1) US10964919B2 (enExample)
EP (1) EP3172778B1 (enExample)
JP (1) JP6742983B2 (enExample)
KR (1) KR102515999B1 (enExample)
CN (2) CN106575706A (enExample)
TW (1) TWI685994B (enExample)
WO (1) WO2016014980A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109524564A (zh) * 2018-11-23 2019-03-26 合肥鑫晟光电科技有限公司 一种有机发光晶体管、温感装置及其温度测试方法
JP2023075093A (ja) * 2017-10-23 2023-05-30 ソニーグループ株式会社 チオフェン-又はセレノフェンベース材料の合成方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3257849A1 (en) 2016-06-14 2017-12-20 Solvay SA Organic semiconductor composition and semiconducting layer obtained therefrom
CN108258117B (zh) * 2016-12-28 2020-03-17 中南大学 一种稳定的高性能钙钛矿光电探测器及其制备方法
KR102421769B1 (ko) * 2017-11-13 2022-07-18 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 유기 발광 표시장치
WO2019139175A1 (en) * 2018-01-09 2019-07-18 Kyushu University, National University Corporation Organic light-emitting field-effect transistor
KR102122445B1 (ko) * 2018-11-29 2020-06-15 동아대학교 산학협력단 저전압 구동형 발광 트랜지스터
CN109801951B (zh) * 2019-02-13 2022-07-12 京东方科技集团股份有限公司 阵列基板、电致发光显示面板及显示装置
CN118923225A (zh) * 2022-03-30 2024-11-08 索尼集团公司 发光元件和电子设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014035842A1 (en) * 2012-08-25 2014-03-06 Polyera Corporation Light-emitting transistors with improved performance
CN103782408A (zh) * 2011-07-29 2014-05-07 E.T.C.有限责任公司 电致发光有机双栅晶体管

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5683823A (en) 1996-01-26 1997-11-04 Eastman Kodak Company White light-emitting organic electroluminescent devices
US5747183A (en) 1996-11-04 1998-05-05 Motorola, Inc. Organic electroluminescent light emitting material and device using same
JP2001319781A (ja) 2000-05-02 2001-11-16 Fuji Photo Film Co Ltd 有機発光素子材料の選択方法及びその材料を用いた有機発光素子
WO2004086526A2 (en) 2003-03-28 2004-10-07 Technische Universität Darmstadt Organic electroluminescence devices
US7074502B2 (en) 2003-12-05 2006-07-11 Eastman Kodak Company Organic element for electroluminescent devices
US20060158397A1 (en) * 2005-01-14 2006-07-20 Joon-Chul Goh Display device and driving method therefor
WO2006077888A1 (ja) * 2005-01-19 2006-07-27 National University Of Corporation Hiroshima University 新規な縮合多環芳香族化合物およびその利用
KR101410150B1 (ko) * 2006-10-20 2014-06-19 니폰 가야꾸 가부시끼가이샤 전계 효과 트랜지스터
US8053260B2 (en) * 2006-11-17 2011-11-08 General Electric Company Large-area lighting systems and methods of making the same
TWI335681B (en) 2007-05-18 2011-01-01 Ind Tech Res Inst White light organic electroluminescent element device
JP5715336B2 (ja) * 2007-06-20 2015-05-07 出光興産株式会社 多環系環集合化合物及びそれを用いた有機エレクトロルミネッセンス素子
TWI322141B (en) 2007-08-28 2010-03-21 Nat Univ Tsing Hua Host material for blue oled and white light emitting device utilizing the same
JP5148211B2 (ja) * 2007-08-30 2013-02-20 出光興産株式会社 有機薄膜トランジスタ及び有機薄膜発光トランジスタ
JP2009152355A (ja) * 2007-12-20 2009-07-09 Konica Minolta Holdings Inc 有機薄膜トランジスタの製造方法、及び有機薄膜トランジスタ
JP5477978B2 (ja) 2009-02-27 2014-04-23 日本化薬株式会社 電界効果トランジスタ
CN105870241A (zh) * 2009-11-24 2016-08-17 佛罗里达大学研究基金会公司 用于感应红外辐射的方法和设备
JP5843304B2 (ja) * 2010-06-11 2016-01-13 山本化成株式会社 有機トランジスタ
US8643001B2 (en) * 2010-12-23 2014-02-04 Samsung Electronics Co. Ltd. Semiconductor composition
ITMI20111446A1 (it) 2011-07-29 2013-01-30 E T C Srl Transistor organico elettroluminescente
ITMI20111447A1 (it) 2011-07-29 2013-01-30 E T C Srl Transistor organico elettroluminescente
EP2755978A1 (en) 2011-09-12 2014-07-23 Polyera Corporation Compounds having semiconducting properties and related compositions and devices
ITMI20120284A1 (it) * 2012-02-27 2013-08-28 E T C Srl Transistor ambipolare elettroluminescente organico ad effetto di campo ad emissione luminosa distribuita
EP2911214B1 (en) * 2014-02-20 2018-08-08 Amorosi, Antonio Multilayer structure of an OLET transistor
EP2978035A1 (en) * 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103782408A (zh) * 2011-07-29 2014-05-07 E.T.C.有限责任公司 电致发光有机双栅晶体管
WO2014035842A1 (en) * 2012-08-25 2014-03-06 Polyera Corporation Light-emitting transistors with improved performance

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HIDEAKI EBATA ET AL: "Highly Soluble [1]Benzothieno[3,2-b]benzothiophene (BTBT) Derivatives for High-Performance, Solution-Processed Organic Field-Effect Transistors", 《J. AM. CHEM. SOC.》 *
MYEONG JIN KANG ET AL: "Two Isomeric Didecyl-dinaphtho[2,3-b:2",3"-f]thieno[3,2-b]thiophenes: Impact of Alkylation Positions on Packing Structures and Organic Field Effect Transistor Characteristics", 《JAPANESE JOURNAL OF APPLIED PHYSICS》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023075093A (ja) * 2017-10-23 2023-05-30 ソニーグループ株式会社 チオフェン-又はセレノフェンベース材料の合成方法
JP7559851B2 (ja) 2017-10-23 2024-10-02 ソニーグループ株式会社 チオフェン-又はセレノフェンベース材料の合成方法
CN109524564A (zh) * 2018-11-23 2019-03-26 合肥鑫晟光电科技有限公司 一种有机发光晶体管、温感装置及其温度测试方法

Also Published As

Publication number Publication date
WO2016014980A1 (en) 2016-01-28
US10964919B2 (en) 2021-03-30
JP6742983B2 (ja) 2020-08-19
JP2017529688A (ja) 2017-10-05
US20170237042A1 (en) 2017-08-17
CN111146352A (zh) 2020-05-12
KR20170036732A (ko) 2017-04-03
EP3172778B1 (en) 2018-10-03
CN111146352B (zh) 2022-10-21
EP3172778A1 (en) 2017-05-31
TW201611369A (zh) 2016-03-16
KR102515999B1 (ko) 2023-03-29
TWI685994B (zh) 2020-02-21

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