TWI683898B - TiN障礙及清潔組成物以及使用該組成物的移除和蝕刻方法 - Google Patents
TiN障礙及清潔組成物以及使用該組成物的移除和蝕刻方法 Download PDFInfo
- Publication number
- TWI683898B TWI683898B TW104115182A TW104115182A TWI683898B TW I683898 B TWI683898 B TW I683898B TW 104115182 A TW104115182 A TW 104115182A TW 104115182 A TW104115182 A TW 104115182A TW I683898 B TWI683898 B TW I683898B
- Authority
- TW
- Taiwan
- Prior art keywords
- acid
- composition
- ether
- group
- glycol
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 91
- 238000005530 etching Methods 0.000 title claims abstract description 52
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract 4
- 238000000034 method Methods 0.000 title claims description 13
- 238000004140 cleaning Methods 0.000 title claims description 6
- 230000008569 process Effects 0.000 title description 6
- 244000208734 Pisonia aculeata Species 0.000 title 1
- 239000003112 inhibitor Substances 0.000 claims abstract description 31
- 239000007800 oxidant agent Substances 0.000 claims abstract description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims abstract description 17
- 239000000010 aprotic solvent Substances 0.000 claims abstract description 15
- 125000003118 aryl group Chemical group 0.000 claims abstract description 15
- 125000001931 aliphatic group Chemical group 0.000 claims abstract description 12
- 239000003381 stabilizer Substances 0.000 claims abstract description 12
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 10
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011737 fluorine Substances 0.000 claims abstract description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 21
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 21
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 17
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052721 tungsten Inorganic materials 0.000 claims description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 14
- 239000010937 tungsten Substances 0.000 claims description 14
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 12
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical group O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- IZXIZTKNFFYFOF-UHFFFAOYSA-N 2-Oxazolidone Chemical compound O=C1NCCO1 IZXIZTKNFFYFOF-UHFFFAOYSA-N 0.000 claims description 7
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 5
- SPEUIVXLLWOEMJ-UHFFFAOYSA-N 1,1-dimethoxyethane Chemical compound COC(C)OC SPEUIVXLLWOEMJ-UHFFFAOYSA-N 0.000 claims description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical group CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 4
- DVLFYONBTKHTER-UHFFFAOYSA-N 3-(N-morpholino)propanesulfonic acid Chemical compound OS(=O)(=O)CCCN1CCOCC1 DVLFYONBTKHTER-UHFFFAOYSA-N 0.000 claims description 4
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 claims description 4
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims description 4
- OWXMKDGYPWMGEB-UHFFFAOYSA-N HEPPS Chemical compound OCCN1CCN(CCCS(O)(=O)=O)CC1 OWXMKDGYPWMGEB-UHFFFAOYSA-N 0.000 claims description 4
- WRYCSMQKUKOKBP-UHFFFAOYSA-N Imidazolidine Chemical compound C1CNCN1 WRYCSMQKUKOKBP-UHFFFAOYSA-N 0.000 claims description 4
- MKWKNSIESPFAQN-UHFFFAOYSA-N N-cyclohexyl-2-aminoethanesulfonic acid Chemical compound OS(=O)(=O)CCNC1CCCCC1 MKWKNSIESPFAQN-UHFFFAOYSA-N 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- LFINSDKRYHNMRB-UHFFFAOYSA-N diazanium;oxido sulfate Chemical compound [NH4+].[NH4+].[O-]OS([O-])(=O)=O LFINSDKRYHNMRB-UHFFFAOYSA-N 0.000 claims description 4
- VFNGKCDDZUSWLR-UHFFFAOYSA-N disulfuric acid Chemical compound OS(=O)(=O)OS(O)(=O)=O VFNGKCDDZUSWLR-UHFFFAOYSA-N 0.000 claims description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 4
- JRKICGRDRMAZLK-UHFFFAOYSA-N peroxydisulfuric acid Chemical compound OS(=O)(=O)OOS(O)(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-N 0.000 claims description 4
- FHHJDRFHHWUPDG-UHFFFAOYSA-N peroxysulfuric acid Chemical compound OOS(O)(=O)=O FHHJDRFHHWUPDG-UHFFFAOYSA-N 0.000 claims description 4
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 claims description 4
- HBAIZGPCSAAFSU-UHFFFAOYSA-N 1-(2-hydroxyethyl)imidazolidin-2-one Chemical compound OCCN1CCNC1=O HBAIZGPCSAAFSU-UHFFFAOYSA-N 0.000 claims description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 3
- PJWWRFATQTVXHA-UHFFFAOYSA-N Cyclohexylaminopropanesulfonic acid Chemical compound OS(=O)(=O)CCCNC1CCCCC1 PJWWRFATQTVXHA-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 3
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 3
- 230000005764 inhibitory process Effects 0.000 claims description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- RBNPOMFGQQGHHO-UHFFFAOYSA-N -2,3-Dihydroxypropanoic acid Natural products OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 claims description 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 claims description 2
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 claims description 2
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 2
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 claims description 2
- CSZZMFWKAQEMPB-UHFFFAOYSA-N 1-methoxybutan-2-ol Chemical compound CCC(O)COC CSZZMFWKAQEMPB-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 2
- NAFPAOUIKZHXDV-UHFFFAOYSA-N 1-propan-2-yloxy-2-(2-propan-2-yloxypropoxy)propane Chemical compound CC(C)OCC(C)OCC(C)OC(C)C NAFPAOUIKZHXDV-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
- LJVNVNLFZQFJHU-UHFFFAOYSA-N 2-(2-phenylmethoxyethoxy)ethanol Chemical compound OCCOCCOCC1=CC=CC=C1 LJVNVNLFZQFJHU-UHFFFAOYSA-N 0.000 claims description 2
- HRWADRITRNUCIY-UHFFFAOYSA-N 2-(2-propan-2-yloxyethoxy)ethanol Chemical compound CC(C)OCCOCCO HRWADRITRNUCIY-UHFFFAOYSA-N 0.000 claims description 2
- HUFRRBHGGJPNGG-UHFFFAOYSA-N 2-(2-propan-2-yloxypropoxy)propan-1-ol Chemical compound CC(C)OC(C)COC(C)CO HUFRRBHGGJPNGG-UHFFFAOYSA-N 0.000 claims description 2
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 claims description 2
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 claims description 2
- SXGZJKUKBWWHRA-UHFFFAOYSA-N 2-(N-morpholiniumyl)ethanesulfonate Chemical compound [O-]S(=O)(=O)CC[NH+]1CCOCC1 SXGZJKUKBWWHRA-UHFFFAOYSA-N 0.000 claims description 2
- PXPZSUXFHFQBPY-UHFFFAOYSA-N 2-[2-(2-hydroxyethoxy)ethoxy]ethanol;2-methoxyethyl acetate Chemical compound COCCOC(C)=O.OCCOCCOCCO PXPZSUXFHFQBPY-UHFFFAOYSA-N 0.000 claims description 2
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 2
- YJTIFIMHZHDNQZ-UHFFFAOYSA-N 2-[2-(2-methylpropoxy)ethoxy]ethanol Chemical compound CC(C)COCCOCCO YJTIFIMHZHDNQZ-UHFFFAOYSA-N 0.000 claims description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- UPGSWASWQBLSKZ-UHFFFAOYSA-N 2-hexoxyethanol Chemical compound CCCCCCOCCO UPGSWASWQBLSKZ-UHFFFAOYSA-N 0.000 claims description 2
- VCCCOJNCORYLID-UHFFFAOYSA-N 2-methoxy-2-methylbutan-1-ol Chemical compound CCC(C)(CO)OC VCCCOJNCORYLID-UHFFFAOYSA-N 0.000 claims description 2
- IPUDBCXGMBSQGH-UHFFFAOYSA-N 2-methoxybutan-1-ol Chemical compound CCC(CO)OC IPUDBCXGMBSQGH-UHFFFAOYSA-N 0.000 claims description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 2
- SJZRECIVHVDYJC-UHFFFAOYSA-N 4-hydroxybutyric acid Chemical compound OCCCC(O)=O SJZRECIVHVDYJC-UHFFFAOYSA-N 0.000 claims description 2
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 claims description 2
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- 229920002873 Polyethylenimine Polymers 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- 239000004310 lactic acid Substances 0.000 claims description 2
- 235000014655 lactic acid Nutrition 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- FOWDZVNRQHPXDO-UHFFFAOYSA-N propyl hydrogen carbonate Chemical compound CCCOC(O)=O FOWDZVNRQHPXDO-UHFFFAOYSA-N 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 2
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 claims description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims 3
- 229940078916 carbamide peroxide Drugs 0.000 claims 3
- SBPIDKODQVLBGV-UHFFFAOYSA-N 1h-imidazole;pyridine Chemical class C1=CNC=N1.C1=CC=NC=C1 SBPIDKODQVLBGV-UHFFFAOYSA-N 0.000 claims 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims 1
- VWIIJDNADIEEDB-UHFFFAOYSA-N 3-methyl-1,3-oxazolidin-2-one Chemical compound CN1CCOC1=O VWIIJDNADIEEDB-UHFFFAOYSA-N 0.000 claims 1
- VKSZEZNGIRQKSC-UHFFFAOYSA-N C(COCCO)O.C(C)OCCOCC Chemical compound C(COCCO)O.C(C)OCCOCC VKSZEZNGIRQKSC-UHFFFAOYSA-N 0.000 claims 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 claims 1
- ADSAOUHQQWUGON-UHFFFAOYSA-N ethoxyethane;2-(2-ethoxyethoxy)ethanol Chemical compound CCOCC.CCOCCOCCO ADSAOUHQQWUGON-UHFFFAOYSA-N 0.000 claims 1
- 239000001630 malic acid Substances 0.000 claims 1
- 235000011090 malic acid Nutrition 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 abstract description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 41
- 239000000243 solution Substances 0.000 description 13
- 238000009472 formulation Methods 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 6
- -1 imidazoline compound Chemical class 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 150000003460 sulfonic acids Chemical class 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 229940098779 methanesulfonic acid Drugs 0.000 description 3
- 150000007524 organic acids Chemical class 0.000 description 3
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- LCKIEQZJEYYRIY-UHFFFAOYSA-N Titanium ion Chemical compound [Ti+4] LCKIEQZJEYYRIY-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 0 *C(N(*)CC1)N1N Chemical compound *C(N(*)CC1)N1N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- 239000008000 CHES buffer Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000007996 HEPPS buffer Substances 0.000 description 1
- 239000007993 MOPS buffer Substances 0.000 description 1
- LFTLOKWAGJYHHR-UHFFFAOYSA-N N-methylmorpholine N-oxide Chemical compound CN1(=O)CCOCC1 LFTLOKWAGJYHHR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- QDHFHIQKOVNCNC-UHFFFAOYSA-N butane-1-sulfonic acid Chemical compound CCCCS(O)(=O)=O QDHFHIQKOVNCNC-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 150000001923 cyclic compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- FRRMMWJCHSFNSG-UHFFFAOYSA-N diazanium;propanedioate Chemical compound [NH4+].[NH4+].[O-]C(=O)CC([O-])=O FRRMMWJCHSFNSG-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- FYAQQULBLMNGAH-UHFFFAOYSA-N hexane-1-sulfonic acid Chemical compound CCCCCCS(O)(=O)=O FYAQQULBLMNGAH-UHFFFAOYSA-N 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229940048195 n-(hydroxyethyl)ethylenediaminetriacetic acid Drugs 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 229920000333 poly(propyleneimine) Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- ILVXOBCQQYKLDS-UHFFFAOYSA-N pyridine N-oxide Chemical compound [O-][N+]1=CC=CC=C1 ILVXOBCQQYKLDS-UHFFFAOYSA-N 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002336 sorption--desorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000013020 steam cleaning Methods 0.000 description 1
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/04—Detergent materials or soaps characterised by their shape or physical properties combined with or containing other objects
- C11D17/041—Compositions releasably affixed on a substrate or incorporated into a dispensing means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3723—Polyamines or polyalkyleneimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3942—Inorganic per-compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/263—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Materials Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本發明係關於一種可用於控制TiN相對於W之蝕刻速率且自表面移除任何殘餘物,例如可能含有氟(F)之有機或無機殘餘物之新穎組成物,該組成物包含a)脂族或芳族磺酸;b)一或多種抑制劑;c)非質子性溶劑;d)二醇醚;及e)水。本發明亦關於一種包含該組成物與氧化劑及視情況存在之該氧化劑之穩定劑之組合的套組,及其用途。
Description
本發明係關於一種用於半導體/IC生產領域中之植入後、蝕刻/蝕刻後及灰化後相關製程之組成物。更特定言之,本發明係關於能夠以自表面移除TiN及有機及/或無機殘餘物為目的調整氮化鈦(TiN)及鎢(W)之蝕刻速率的調配物。
積體電路(Integrated circuit;IC)由形成於矽基板中或矽基板上之數百萬主動裝置組成。最初彼此分離之主動裝置經聯合以形成功能電路及組件。經由使用熟知多層級互連將該等裝置互連。互連結構通常具有第一金屬化層、互連層、第二金屬化層級及近年來第三及後續金屬化層級。
在半導體/IC生產領域中,通常藉助於濕式清潔製程移除蝕刻後殘餘物(post-etch residue;PER)。在此可使用包含錯合劑及水之溶液。此外,在微電子結構內選擇性蝕刻不同層被視為IC製造製程中之重要及關鍵步驟。在包括鎢插塞(W插塞)、TiN及低k介電材料之第一金屬化層中,需要能夠以不顯著損壞W插塞之速率蝕刻TiN。在主要含有銅(Cu插塞)之後續金屬化層中,需要能夠以不顯著損壞銅插塞之速率蝕刻TiN。視TiN及金屬層之個別厚度(其極大地視使用之整合方案而定)而定,此需要能
夠調整TiN及金屬(W或Cu)之蝕刻速率之溶液。
應理解調配物中氧化劑之存在,諸如過氧化氫,可為獲得足夠高之TiN蝕刻速率所必需。然而,非所需影響為藉由添加氧化劑(諸如過氧化氫),鎢、銅及相關金屬之蝕刻速率亦增加。因此,需要發現允許調整TiN及W之蝕刻速率同時能夠自晶圓表面移除有機及/或無機殘餘物(例如含F)之適合添加劑。
US7,919,445係關於一種用於移除蝕刻後殘餘物之新穎溶液。較佳添加作為腐蝕抑制劑之咪唑啉化合物以用於處理具有例如鎢及鋁金屬化之晶圓表面。
WO03060045係關於用於自半導體基板移除光阻、蝕刻及灰分殘餘物及污染物之水性組成物。單一腐蝕抑制劑化合物或腐蝕抑制劑之混合物,諸如苯并三唑、苯甲酸、丙二酸、五倍子酸、兒茶酚、丙二酸銨,可用於汽提及清潔組成物中。WO03060045未使用用於蝕刻TiN之氧化劑,其亦未論述W之保護。
WO06138505係關於適用於自微電子裝置之表面移除硬化光阻、蝕刻後殘餘物及/或底部抗反射塗層之稠密流體組成物,例如超臨界流體組成物。然而,該等流體組成物中含有至少一種氟源,其將損壞低k介電材料。WO06138505亦未涉及TiN之蝕刻及W之保護。
EP1552342B1涉及自物件之微結構選擇性移除蝕刻殘餘物而不侵蝕曝露於用於移除殘餘物之組成物的金屬及/或二氧化矽膜。因此,該先前技術幾乎不論述TiN之蝕刻。另外,用於該先前技術之組成物中亦含有氟化物。
US6,136,711描述一種能夠在最小蝕刻及/或腐蝕之情況下以高速率拋光鎢之化學機械拋光組成物。該組成物包含能夠蝕刻鎢之化合物且包含至少一種鎢蝕刻之抑制劑。特定言之,描述雙組分溶液,其中兩種組分為成膜劑,其分別包含含一個氮原子之環狀化合物及矽烷化合物。
在先前專利或研究中,W抑制劑(若存在)亦抑制TiN蝕刻速率。因此,需要發現允許分別控制W及TiN之相對蝕刻速率之添加劑。此外,若添加劑藉由共價或非共價鍵結合至W且無法藉由後續沖洗移除,則W插塞之電阻將不可接受且將影響可靠性。因此,溶液不僅應保護W表面,而且應含有可藉由沖洗步驟用適當溶劑移除之組分。
因此,本發明提供一種可用於控制TiN相對於W之蝕刻速率且自表面移除任何殘餘物(例如可能含有氟(F)之有機或無機殘餘物)之新穎組成物。
本發明之一個態樣為提供一種具有TiN相對於W之可控蝕刻速率比且能夠在半導體/IC生產製程期間移除含F殘餘物之組成物,該組成物包含:a)芳族或脂族磺酸;b)一或多種抑制劑;c)非質子性溶劑;d)二醇醚;及e)水。
本發明之另一態樣為該組成物與氧化劑及視情況存在之該
氧化劑之穩定劑之組合之用途,此溶液包含:A)包含以下各者之組成物a)芳族或脂族磺酸;b)一或多種抑制劑;c)非質子性溶劑;d)二醇醚;e)水;B)氧化劑,諸如過氧化氫;及視情況存在之該氧化劑之穩定劑。
當結合隨附圖式時,本發明之其他目標、優勢及新穎特徵將自以下詳細描述變得更顯而易見。
11‧‧‧含C、O、F、Ti及N之殘餘物
12‧‧‧W插塞
13‧‧‧低k材料
14‧‧‧TiN
15‧‧‧TiN障礙
31‧‧‧配位鍵結
32‧‧‧溶劑
33‧‧‧水
51‧‧‧試片
52‧‧‧調配物
圖1說明在第一金屬化層中在晶圓上之通用結構,規定含C、O、F、Ti及N之殘餘物11,W插塞12,低k材料13及TiN 14。
圖2說明在第一金屬化層中含C、O、F、Ti及N之殘餘物11之移除及TiN 14(TiN障礙15)之部分蝕刻。
圖3示意性地描繪抑制劑之吸附-解吸附控制及水、溶劑及抑制劑在此等製程中之作用。
圖4展示W之波貝克斯圖(Pourbaix diagram)(實心符號-所施加之電位;空心符號-OCP)。
圖5示意性地描繪用於實驗中之實驗設定(厚度量測;蝕刻速率;清潔效能(SEM、TEM、XPS……))。
圖6展示在用指定調配物清潔之前及在清潔之後的XPS氟譜。
雖然本發明容許各種形式之具體實例,但下文將在理解本發明應視為本發明之範例且不意欲將本發明限於所說明之特定具體實例的情況下描述當前較佳具體實例。
在本申請案之一個具體實例中,藉由以任何順序混合以下各者製備組成物:a)脂族或芳族磺酸;b)一或多種抑制劑;c)非質子性溶劑;d)二醇醚;及e)水。該組成物可用於製備其中在半導體/IC生產製程期間可調整TiN及W蝕刻速率以及可移除有機及/或無機殘餘物(視情況含有F)之調配物。為此目的,可將氧化劑添加至組成物中且可添加視情況存在之該氧化劑之穩定劑。
因此,在本申請案之另一具體實例中,藉由以下各者製備調配物:以任何順序混合a)芳族或脂族磺酸;b)一或多種抑制劑;c)非質子性溶劑;d)二醇醚;及e)水,隨後添加氧化劑,及視情況存在之該氧化劑之穩定劑。
隨後,使待處理之毯覆式晶圓(鎢、TiN、低k)或圖案化晶圓斷裂成試片,且隨後接觸如所製備之調配物。
如圖1至圖2中所說明,殘餘物移除及TiN蝕刻同時進行,而TiN與鎢之蝕刻速率藉由改變組成物中之組分來控制。另外,可在用適當溶劑,諸如水或異丙醇(isopropanol;IPA)沖洗之後移除抑制劑。
抑制劑可選自已知為咪唑啶酮(a類)、咪唑啶(b類)或2-噁唑啶酮(c類)之化合物類別。
R1、R2=-H、-CnH2n+1、-C6H5、-CH2C6H5、-OH、-CnH2nOH(其中n=1-10)、-C(O)NR3R4、-NR3R4、-C(O)OR5
R3、R4=-H、-CnH2n+1、-C6H5、-CH2C6H5、-C(O)OH、-OH、-CnH2nOH,其中n=1-10
R5=-H、-CnH2n+1、-CH2C6H5、-C6H5、-CnH2nOH(其中n=1-10)、-NR3R4
R1、R2、R3=-H、-CnH2n+1、-C6H5、-CH2C6H5、-OH、-CnH2nOH(其中n=1-10)、-C(O)NR4R5、-NR4R5、-C(O)OR6
R4、R5=-H、-CnH2n+1、-C6H5、-CH2C6H5、-C(O)OH、-OH、-CnH2nOH,其中n=1-10
R6=-H、-CnH2n+1、-CH2C6H5、-C6H5、-CnH2nOH(其中n=1-10)、-NR4R5
R1=-H、-CnH2n+1、-C6H5、-CH2C6H5、-OH、-CnH2nOH(其中n=1-10)、-C(O)NR2R3、-NR2R3、-C(O)OR4
R2、R3=-H、-CnH2n+1、-C6H5、-CH2C6H5、-C(O)OH、-OH、-CnH2nOH,其中n=1-10
R4=-H、-CnH2n+1、-CH2C6H5、-C6H5、-CnH2nOH(其中n=1-10)、-NR2R3
抑制劑可為例如乙烯脲、N-(2-羥乙基)乙烯脲、1-(2-羥乙基)-2-咪唑啶酮或2-噁唑啶酮、3-甲基-2噁唑啶酮及其衍生物。抑制劑亦可為聚乙二亞胺或聚丙二亞胺。
以組成物之總重量計,抑制劑可以範圍為0.1wt%至10wt%,諸如2.7wt%之量存在於本發明組成物中。
雖然不希望受此理論束縛,但咸信吸附控制可藉由抑制劑與金屬插塞表面之配位鍵結31實現,如圖3中關於鎢所說明。另外,由於為溶劑較佳(例如R2)或水較佳(例如R1)之官能基,解吸附控制可藉由抑制劑分別與溶劑32或水33之間的相互作用實現。因此,可藉由溶劑及水比率控制金屬插塞之蝕刻速率,視何種製程(吸附或解吸附)更強而定。另外,可藉由改變各種類別之抑制劑內之官能基來控制各種化合物之蝕刻速率。二醇醚可選自二乙二醇丁醚、2-己氧基-1-乙醇、四氫糠醇、乙二醇單甲醚、乙二醇單乙醚、乙二醇單丁醚、2-(萘-6-基氧基)聚乙氧基乙醇、乙二醇二甲醚、乙二醇二乙醚、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丙醚、二乙二醇單異丙醚、二乙二醇單丁醚、二乙二醇單異丁醚、二乙二醇單苯甲基醚、二乙二醇二甲醚、二乙二醇二乙醚、三乙二醇單甲醚、三乙二醇二甲醚、聚乙二醇單甲醚、二乙二醇甲基乙基醚、三乙二醇乙二醇
單甲醚乙酸酯、乙二醇單乙醚乙酸酯、丙二醇單甲醚、丙二醇二甲醚、丙二醇單丁醚、丙二醇單丙醚、二丙二醇單甲醚、二丙二醇單丙醚、二丙二醇單異丙醚、二丙二醇單丁醚、二丙二醇二異丙醚、三丙二醇單甲醚、1-甲氧基-2-丁醇、2-甲氧基-1-丁醇、2-甲氧基-2-甲基丁醇、1,1-二甲氧乙烷或2-(2-丁氧基乙氧基)乙醇或其混合物。
以組成物之總重量計,二醇醚可以範圍為1%至60%之量存在於本發明組成物中。
在本發明組成物中,溶劑及水比率為1:10至2:1,較佳1:8至1:1,最佳1:5至1:1。
如圖4中所說明,較低pH將導致較低鎢蝕刻速率(黑色區域視為免於蝕刻)。因此,需要低pH(<4)以減少鎢腐蝕。然而,低pH意謂氧化劑活性較低,其導致較低TiN蝕刻速率。本發明成功地發現藉由添加適合酸(芳族及脂族磺酸)新穎化合物均減少W之蝕刻,同時提高TiN之蝕刻速率,保持低k材料上之可接受地低的蝕刻速率,且移除有機及/或無機殘餘物(圖6)。此可由化學方程式1進一步說明:TiN+H2O+2 H2O2 → NH3(g)+H2TiO3(水溶液)+O2(g) (化學方程式1)
為了增強TiN蝕刻速率,以上方程式之正右方向較佳。
雖然不希望受此理論束縛,但熟習此項技術者已知所產生之偏鈦酸(H2TiO3)具有複合結構且可容易地與水反應以在(部分)水溶液中得到大量Ti(IV)化合物。視溶液之pH而定,達到平衡,除無數其他結構,諸如由各種水合數之Ti(IV)物質組成之寡聚物及奈米管以外,其含有化學方程式2中描述之化合物。
以下,吾人展示向溶液中添加磺酸增加TiN之蝕刻速率。吾人將此歸因於化學方程式1之平衡之轉移,其係藉由使磺酸與鈦(IV)配位,自方程式之右側移除其且轉移平衡,得到鈦之增強之蝕刻速率。以下直接描述藉由羥基配位體與磺酸配位體之交換形成之結構。左側為示意性表示,且右側為來自結構之MM2最佳化之3D繪製,在兩種情況下R=CH3。結構展示磺酸與Ti(IV)中心之配位。作為穩定效應,Ti(IV)中心上之其餘OH基團可與磺酸配位體形成氫鍵(藉由虛鍵描述),其清楚地展示於以下3D繪製中。氫鍵為熟習此項技術者熟知用於穩定結構,且另外,此特定氫鍵使得形成6員環,其提供額外穩定。因而,此類穩定結構之形成另外支持藉由將化學方程式1之平衡轉移至右側,在磺酸化合物存在下TiN蝕刻速率增加之觀察結果。幫助驅使平衡至右側之一個額外效應為此處使用之脂族或芳族磺酸可溶於本發明中所用之混合物之有機溶劑組分中。因而,其將提高在製程期間產生之各種鈦(IV)物質之溶解度。
芳族或脂族磺酸可用於調節pH值且控制較低W蝕刻速率。另外,該等磺酸亦可藉由形成如前所述之穩定配位鍵促成含金屬殘餘物之移除。另外,該等磺酸不損壞低k材料且為H2O2之良好穩定劑。
脂族或芳族磺酸可選自烷基磺酸(諸如甲磺酸、乙磺酸、丙磺酸、丁磺酸及己磺酸)、3-(N-嗎啉基)丙磺酸(3-(N-morpholino)propane sulfonic acid;MOPS)、2-(N-嗎啉基)乙磺酸(2-(N-morpholino)ethanesulfonic acid;MES)、N-環己基-2-胺基乙磺酸(N-cyclohexyl-2-aminoethanesulfonic acid;CHES)、3-[4-(2-羥乙基)-1-哌嗪基]丙磺酸(3-[4-(2-hydroxyethyl)-1-piperazinyl]propanesulfonic acid;HEPPS)或N-環己基-3-胺基丙磺酸(N-cyclohexyl-3-aminopropanesulfonic acid;CAPS)或其混合物。
以組成物之總重量計,脂族或芳族磺酸可以範圍為0.05wt%至4wt%,較佳0.1wt%至1wt%,最佳0.1wt%至0.5wt%,諸如0.3wt%之量存在於本發明組成物中。
非質子性溶劑可選自二甲亞碸(dimethyl sulfoxide;DMSO)、環丁碸、碳酸伸丙酯、二甲基乙醯胺(dimethylacetamide;DMAc)、N-甲基-2-吡咯啶酮(N-methyl-2-pyrrolidone;NMP)或二甲基甲醯胺
(dimethylformamide;DMF)或其混合物。
以組成物之總重量計,非質子性溶劑可以範圍為5wt%至50wt%,較佳20wt%至45wt%,最佳30wt%至40wt%,諸如35wt%之量存在於本發明組成物中。
在本發明之另一具體實例中,可將氧化劑(諸如過氧化氫(H2O2)、過氧化脲、過氧二硫酸、過氧硫酸銨、過氧單硫酸、焦硫酸、臭氧,尤其H2O2)添加至包含a)脂族或芳族磺酸;b)一或多種抑制劑;c)非質子性溶劑;d)二醇醚;及e)水之組成物中以形成調配物。
可以範圍為65:1至8:1(約0.5wt%至3wt%),較佳65:1至12:1(約0.5wt%至2.5wt%),最佳65:1至15:1(約0.5wt%至2wt%),諸如32:1(約1wt%)之體積比(包含組分a)至e)之組成物比氧化劑)添加氧化劑。
視情況,可向調配物中添加氧化劑之穩定劑。
穩定劑可選自胺-N-氧化物(例如N-甲基嗎啉N-氧化物、吡啶-N-氧化物)、檸檬酸、1-羥基乙烷1,1-二膦酸(1-hydroxyethane 1,1-diphosphonic acid;HEDP)、N-(羥乙基)-乙二胺三乙酸(N-(hydroxyethyl)-ethylenediaminetriacetic acid;HEDTA)、乙醇酸、乳酸、羥基丁酸、甘油酸、蘋果酸、酒石酸、丙二酸、丁二酸、戊二酸、順丁烯二酸或其混合物。
以組成物之總重量計,穩定劑可以範圍為0.01wt%至0.5wt%,較佳0.01wt%至0.1wt%,最佳0.01wt%至0.05wt%,諸如0.05wt%之量存在於本發明組成物中。
在本申請案之另一具體實例中,提供一種套組。該套組由以下各者構成:A)包含以下各者之組成物:a)脂族或芳族磺酸;b)一或多種抑制劑;c)非質子性溶劑;d)二醇醚;及e)水;及B)氧化劑,及視情況存在之該氧化劑之穩定劑。
該套組可用於在半導體/IC生產製程期間分別調整W及TiN之蝕刻速率,且自晶圓移除有機及/或無機殘餘物(視情況含有F)。
進行以下實驗及實施例以分別說明TiN及W插塞之蝕刻及蝕刻速率,且展示含F殘餘物之移除,
A.蝕刻速率實驗:
步驟1.毯覆式晶圓(鎢、TiN、低k)或圖案化晶圓選自商業來源。
步驟2.使晶圓斷裂成較小試片51,如圖5中所描繪。
步驟3.量測適當材料之初始膜厚度:1.對於金屬,使用4點探針量測初始層厚度;2.對於非金屬,使用橢圓對稱法量測初始膜厚度。
步驟4.如下所述製備調配物52。
步驟5.將調配物52放入熱循環槽中以達至穩定目標溫度;所使用之溫度類似於常見工業製程中所使用之溫度(約40℃至60℃)。使用機械攪拌器攪動溶液。
步驟6.將試片固定至機械固持器。
步驟7.使試片與溶液接觸一定時間段(一般10分鐘),如圖5所描繪。
步驟8.在一定量之時間過去之後,中斷溶液與試片之間的接觸且用超
純水或IPA,或水/IPA混合物清潔試片約15秒至5分鐘,一般1分鐘。
步驟9.試片經N2氣體乾燥且進行檢查以確保無水留在表面上。
步驟10.如步驟3中所描述量測殘餘厚度。
步驟11.如下所述計算蝕刻速率。
舉例而言,當在反應之前厚度為330Å,在反應之後厚度為300Å,且反應時間為10min時,如以下計算蝕刻速率:蝕刻速率=(330-300)/10=3Å/min
B.圖案化晶圓表面殘餘物組成評估
步驟與A中相同,但不進行步驟3、10及11。
藉由XPS測定元素豐度,如圖6中所描繪。
提供以下實施例以允許更好地理解本發明。此等實施例不應理解為在任何態樣中縮小本發明之範疇。
在本說明書中所有百分比資料為以組成物之總重量計之重量百分比,除了氧化劑以包含組分a)至e)之組成物比氧化劑形式之體積比添加且計算為重量百分比。此處不言而喻組成物中所添加之組分a)至e)之量合計為100%。
遵循前文中所描述之步驟如下文所概括進行各種實施例以說明本發明及先前技術與本發明之間的比較。
在實施例1至4中,檸檬酸用作有機酸,且在實施例3至4中,Ablumine O(1-羥乙基-2-烷基咪唑啉之混合物)用作抑制劑。其餘部分
為水。
表1中之結果展示在不存在有機酸(如檸檬酸)(實例2)的情況下,非所需W E/R極高。此外,添加Ablumine O作為W抑制劑(實施例3至4)展示抑制W E/R同時引起明顯TiN E/R抑制。
在實施例5中,用DMSO替代NMP。其餘部分為水。
表2中之結果展示溶劑自NMP改變至DMSO並未改變W/TiN E/R比。
在實施例6至10中,用甲磺酸替代檸檬酸且添加過氧化氫。結果概述於表3中。其餘部分為水。
表3中之結果展示使用甲磺酸代替檸檬酸且添加過氧化氫增強TiN E/R而不會同時增加W E/R,且不僅提供比檸檬酸多的對蝕刻比率的控制,而且改良W/TiN E/R比率,其在IC生產製程中合乎需要。
在實施例11至19中,用2-咪唑啶酮替代Ablumine O(1-羥乙基-2-烷基咪唑啉之混合物)作為W抑制劑且添加過氧化氫作為氧化劑。結果概述於表4中。其餘部分為水。
表4,尤其實施例12、13、14及15中之結果展示使用足夠2-咪唑啶酮可顯著降低在W上之蝕刻速率同時保持在TiN上之蝕刻速率。實施例16、17及18展示改變溶劑BDG及DMSO之比率及濃度亦將改變此選擇性,其中實施例17展示在W上之最低蝕刻速率同時保持在TiN上之較高蝕刻速率。另外,無添加之過氧化氫的實施例17之混合物展示在60℃下分別0Å/min(k=2.6)及0.1Å/min(k=2.3)之低k材料之蝕刻速率。
在實施例20至31中,如表5中所概述,測試可用於本發明中之其他適合有機酸及W抑制劑。其餘部分為水。
自上表中之結果,顯而易見所使用之抑制劑允許控制TiN及W之蝕刻速率比。另外,圖6清楚地展示實施例27及28中所使用之溶液能夠幾乎完全移除含氟殘餘物,同時熟習此項技術者將認識到在沖洗之後在表面上不留下痕量抑制劑。
在本發明中,詞「一(a/an)」理解為包括單數及複數兩者。
相反,適當時對複數項目之任何提及將包括單數。
自前文,將觀察到可在不脫離本發明之新穎概念之真實精神及範疇之情況下實現許多修改及變化。應理解不意欲或不應推斷關於所說明之特定具體實例或實施例之限制。本發明意欲藉由所附申請專利範圍涵蓋屬於申請專利範圍之範疇之所有該等修改。
11‧‧‧含C、O、F、Ti及N之殘餘物
12‧‧‧W插塞
13‧‧‧低k材料
Claims (19)
- 一種清潔組成物,其包含下列組分a)-f),以該組成物之總重量計:a)0.05至4wt.%的脂族或芳族磺酸;b)0.1至10wt.%的抑制劑,該抑制劑選自以下組成之群:咪唑啶酮類、咪唑啶類、2-噁唑啶酮類、聚乙二亞胺及聚丙二亞胺,其中該咪唑啶酮類具有以下結構:
- 如申請專利範圍第1項之組成物,其中該脂族或芳族磺酸選自以下組 成之群:烷基磺酸、3-(N-嗎啉基)丙磺酸、2-(N-嗎啉基)乙磺酸、N-環己基-2-胺基乙磺酸、3-[4-(2-羥乙基)-1-哌嗪基]丙磺酸、N-環己基-3-胺基丙磺酸及其混合物。
- 如申請專利範圍第2項之組成物,其中以該組成物之總重量計,該脂族或芳族磺酸以範圍為0.1wt%至1wt%之量存在於該組成物中。
- 如申請專利範圍第1項之組成物,其中該抑制劑係選自以下組成之群:如申請專利範圍第1項所定義之咪唑啶酮、咪唑啶及其混合物。
- 如申請專利範圍第1項之組成物,其中該抑制劑係選自以下組成之群:乙烯脲、1-(2-羥乙基)-2-咪唑啶酮、2-噁唑啶酮和3-甲基-2噁唑啶酮。
- 如申請專利範圍第1項之組成物,其中該非質子性溶劑選自以下組成之群:二甲亞碸、環丁碸、碳酸伸丙酯、二甲基乙醯胺、N-甲基-2-吡咯啶酮、二甲基甲醯胺及其混合物。
- 如申請專利範圍第6項之組成物,其中以該組成物之總重量計,該非質子性溶劑以範圍為20wt%至45wt%之量存在於該組成物中。
- 如申請專利範圍第1項之組成物,其中該二醇醚選自以下組成之群:二乙二醇丁醚、2-己氧基-1-乙醇、乙二醇單甲醚、乙二醇單乙醚、乙二醇單丁醚、2-(萘-6-基氧基)聚乙氧基乙醇、乙二醇二甲醚、乙二醇二乙醚、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丙醚、二乙二醇單異丙醚、二乙二醇單異丁醚、二乙二醇單苯甲基醚、二乙二醇二甲醚、二乙二醇二乙醚、三乙二醇單甲醚、三乙二醇二甲醚、聚乙二醇單甲醚、二乙二醇甲基乙基醚、三乙二醇乙二醇單甲醚乙酸酯、乙二醇單乙醚乙酸酯、丙二醇單甲醚、丙二醇二甲醚、丙二醇單丁醚、丙 二醇單丙醚、二丙二醇單甲醚、二丙二醇單丙醚、二丙二醇單異丙醚、二丙二醇單丁醚、二丙二醇二異丙醚、三丙二醇單甲醚、1-甲氧基-2-丁醇、2-甲氧基-1-丁醇、2-甲氧基-2-甲基丁醇、1,1-二甲氧乙烷、2-(2-丁氧基乙氧基)乙醇及其混合物。
- 一種移除方法,其包含:藉由使表面與如申請專利範圍第1項之組成物接觸以將有機及/或無機殘餘物從該表面移除。
- 如申請專利範圍第9項之方法,其中該氧化劑選自以下組成之群:過氧化氫、過氧化脲、過氧二硫酸、過氧硫酸銨、過氧單硫酸、焦硫酸及臭氧。
- 如申請專利範圍第1項之組成物,其進一步包含選自以下組成之群的穩定劑:胺-N-氧化物、檸檬酸、1-羥基乙烷、1,1-二膦酸、乙醇酸、乳酸、羥基丁酸、甘油酸、蘋果酸、酒石酸、丙二酸、丁二酸、戊二酸、順丁烯二酸及其混合物。
- 如申請專利範圍第11項之組成物,其中以該組成物之總重量計,該穩定劑以範圍為0.01wt%至0.5wt%之量存在於該組成物中。
- 如申請專利範圍第9項之方法,其中該有機及/或無機殘餘物包含氟。
- 如申請專利範圍第9項之方法,其進一步包含:在鎢存在下從該表面蝕刻TiN。
- 一種蝕刻方法,其包含:藉由使表面與如申請專利範圍第1項之組成物接觸,在另一種金屬存在下,從該表面蝕刻TiN。
- 如申請專利範圍第1項之組成物,其中該非質子性溶劑相對於水的重量比為1:8至1:1,且其中該氧化劑以組分a)至e)相對於該氧化劑之範圍從65:1至12:1的體積比存在。
- 如申請專利範圍第1項之組成物,其中該非質子性溶劑選自以下組成之群:二甲亞碸(DMSO)、二甲基乙醯胺(DMAc)、二甲基甲醯胺(DMF)及其混合物。
- 如申請專利範圍第1項之組成物,其中該氧化劑選自以下組成之群:過氧化氫、過氧化脲、過氧二硫酸、過氧硫酸銨、過氧單硫酸、焦硫酸及臭氧。
- 如申請專利範圍第17項之組成物,其中該氧化劑選自以下組成之群:過氧化氫、過氧化脲、過氧二硫酸、過氧硫酸銨、過氧單硫酸、焦硫酸及臭氧。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14168103.1 | 2014-05-13 | ||
EP14168103 | 2014-05-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201602339A TW201602339A (zh) | 2016-01-16 |
TWI683898B true TWI683898B (zh) | 2020-02-01 |
Family
ID=50693519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104115182A TWI683898B (zh) | 2014-05-13 | 2015-05-13 | TiN障礙及清潔組成物以及使用該組成物的移除和蝕刻方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10170296B2 (zh) |
EP (1) | EP3143117B1 (zh) |
KR (1) | KR102375342B1 (zh) |
CN (2) | CN116286222A (zh) |
IL (1) | IL248791A0 (zh) |
TW (1) | TWI683898B (zh) |
WO (1) | WO2015173730A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7330972B2 (ja) | 2017-12-08 | 2023-08-22 | ビーエーエスエフ ソシエタス・ヨーロピア | 半導体基板からエッチング後または灰化後の残留物を除去するための洗浄剤組成物、およびそれに対応する製造方法 |
US12024693B2 (en) | 2018-04-04 | 2024-07-02 | Basf Se | Imidazolidinethione-containing compositions for post-ash residue removal and/or for oxidative etching of a layer or mask comprising TiN |
CN108828910A (zh) * | 2018-06-21 | 2018-11-16 | 深圳达诚清洗剂有限公司 | 一种正性光刻胶清洗组合物及其制备方法 |
CN110713868A (zh) * | 2018-07-13 | 2020-01-21 | 巴斯夫欧洲公司 | 可移除氮化钛的蚀刻后残渣清理溶液 |
JP2022534057A (ja) | 2019-05-23 | 2022-07-27 | ビーエーエスエフ ソシエタス・ヨーロピア | 低k値の材料、銅、コバルト、および/またはタングステンの層が存在する状態で、ハードマスクおよび/またはエッチング停止層を選択的にエッチングするための組成物および方法 |
CN114258424B (zh) * | 2019-06-13 | 2023-07-04 | 富士胶片电子材料美国有限公司 | 蚀刻组合物 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200730621A (en) * | 2005-10-05 | 2007-08-16 | Advanced Tech Materials | Oxidizing aqueous cleaner for the removal of post-etch residues |
US20130296214A1 (en) * | 2010-07-16 | 2013-11-07 | Advanced Technology Materials, Inc. | Aqueous cleaner for the removal of post-etch residues |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6083419A (en) | 1997-07-28 | 2000-07-04 | Cabot Corporation | Polishing composition including an inhibitor of tungsten etching |
US6943142B2 (en) | 2002-01-09 | 2005-09-13 | Air Products And Chemicals, Inc. | Aqueous stripping and cleaning composition |
US7166419B2 (en) | 2002-09-26 | 2007-01-23 | Air Products And Chemicals, Inc. | Compositions substrate for removing etching residue and use thereof |
DE10313517B4 (de) * | 2003-03-25 | 2006-03-30 | Atotech Deutschland Gmbh | Lösung zum Ätzen von Kupfer, Verfahren zum Vorbehandeln einer Schicht aus Kupfer sowie Anwendung des Verfahrens |
CN101065837A (zh) | 2004-03-30 | 2007-10-31 | 巴斯福股份公司 | 用于去除蚀刻后残留物的水溶液 |
US7247567B2 (en) | 2004-06-16 | 2007-07-24 | Cabot Microelectronics Corporation | Method of polishing a tungsten-containing substrate |
KR20080023346A (ko) | 2005-06-16 | 2008-03-13 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 경화된 포토레지스트, 에칭 후 잔류물 및/또는 바닥 반사방지 코팅 층의 제거를 위한 고밀도 유체 조성물 |
US9058975B2 (en) * | 2006-06-09 | 2015-06-16 | Lam Research Corporation | Cleaning solution formulations for substrates |
TWI611047B (zh) | 2006-12-21 | 2018-01-11 | 恩特葛瑞斯股份有限公司 | 用以移除蝕刻後殘餘物之液體清洗劑 |
TW200941582A (en) * | 2007-10-29 | 2009-10-01 | Ekc Technology Inc | Methods of post chemical mechanical polishing and wafer cleaning using amidoxime compositions |
WO2009058278A1 (en) * | 2007-10-29 | 2009-05-07 | Ekc Technology, Inc | Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions |
CN101883688A (zh) * | 2007-11-16 | 2010-11-10 | Ekc技术公司 | 用来从半导体基板除去金属硬掩模蚀刻残余物的组合物 |
KR20110063632A (ko) | 2008-08-05 | 2011-06-13 | 미츠비시 가스 가가쿠 가부시키가이샤 | 잔사 박리액 조성물 및 그것을 이용한 반도체 소자의 세정 방법 |
US8309502B2 (en) | 2009-03-27 | 2012-11-13 | Eastman Chemical Company | Compositions and methods for removing organic substances |
US8444768B2 (en) * | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
KR101749086B1 (ko) * | 2010-04-15 | 2017-06-21 | 엔테그리스, 아이엔씨. | 폐 인쇄 회로판의 재순환 방법 |
EP2503029B1 (en) | 2011-03-22 | 2013-03-20 | Atotech Deutschland GmbH | Process for etching a recessed structure filled with tin or a tin alloy |
CN104145324B (zh) | 2011-12-28 | 2017-12-22 | 恩特格里斯公司 | 用于选择性蚀刻氮化钛的组合物和方法 |
-
2015
- 2015-05-12 US US15/310,647 patent/US10170296B2/en active Active
- 2015-05-12 KR KR1020167034757A patent/KR102375342B1/ko active IP Right Grant
- 2015-05-12 CN CN202310303019.2A patent/CN116286222A/zh active Pending
- 2015-05-12 EP EP15792549.6A patent/EP3143117B1/en active Active
- 2015-05-12 CN CN201580025719.3A patent/CN106459850A/zh active Pending
- 2015-05-12 WO PCT/IB2015/053483 patent/WO2015173730A1/en active Application Filing
- 2015-05-13 TW TW104115182A patent/TWI683898B/zh active
-
2016
- 2016-11-07 IL IL248791A patent/IL248791A0/en active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200730621A (en) * | 2005-10-05 | 2007-08-16 | Advanced Tech Materials | Oxidizing aqueous cleaner for the removal of post-etch residues |
US20130296214A1 (en) * | 2010-07-16 | 2013-11-07 | Advanced Technology Materials, Inc. | Aqueous cleaner for the removal of post-etch residues |
Also Published As
Publication number | Publication date |
---|---|
EP3143117B1 (en) | 2019-09-04 |
CN106459850A (zh) | 2017-02-22 |
US10170296B2 (en) | 2019-01-01 |
CN116286222A (zh) | 2023-06-23 |
TW201602339A (zh) | 2016-01-16 |
US20170076939A1 (en) | 2017-03-16 |
KR20170008781A (ko) | 2017-01-24 |
EP3143117A1 (en) | 2017-03-22 |
WO2015173730A1 (en) | 2015-11-19 |
IL248791A0 (en) | 2017-01-31 |
EP3143117A4 (en) | 2018-03-28 |
KR102375342B1 (ko) | 2022-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI683898B (zh) | TiN障礙及清潔組成物以及使用該組成物的移除和蝕刻方法 | |
TWI722504B (zh) | 用於TiN硬遮罩的移除及蝕刻殘留物的清潔的組合物 | |
JP6339555B2 (ja) | 高いwn/w選択率を有するストリッピング組成物 | |
TWI660029B (zh) | TiN硬遮罩及蝕刻殘留物的移除 | |
TWI787184B (zh) | 用於自半導體基板去除光阻或光阻殘餘物之剝離組成物及使用其之方法 | |
TWI687515B (zh) | 用來移除表面殘餘物的清洗調配物 | |
KR101444468B1 (ko) | 에칭후 잔류물을 제거하기 위한 산화성 수성 세정제 | |
JP6707546B2 (ja) | 半導体基板からフォトレジストを除去するための剥離組成物 | |
JP2016138282A (ja) | Cmp後洗浄配合物用の新規な酸化防止剤 | |
JP6893562B2 (ja) | 進歩したノードbeol処理のためのエッチング後残留物除去 | |
JP2019125810A (ja) | 半導体デバイス用基板洗浄液及び半導体デバイス用基板の洗浄方法 | |
WO2015116679A1 (en) | Post chemical mechanical polishing formulations and method of use | |
JP2012518716A (ja) | 半導体デバイスウェハーからイオン注入フォトレジストを洗浄するためのストリッピング組成物 | |
CN110713868A (zh) | 可移除氮化钛的蚀刻后残渣清理溶液 | |
TWI787225B (zh) | 洗淨液組成物 | |
JP2016086094A (ja) | 半導体デバイス用基板の洗浄液及び半導体デバイス用基板の洗浄方法 | |
TWI791535B (zh) | 可移除氮化鈦的蝕刻後殘渣清理溶液 | |
TW202325827A (zh) | 可移除氮化鈦的蝕刻後殘渣清理溶液 |