TWI682051B - 液體前驅組成物、其製備方法、以及利用組成物以形成層之方法 - Google Patents

液體前驅組成物、其製備方法、以及利用組成物以形成層之方法 Download PDF

Info

Publication number
TWI682051B
TWI682051B TW104119200A TW104119200A TWI682051B TW I682051 B TWI682051 B TW I682051B TW 104119200 A TW104119200 A TW 104119200A TW 104119200 A TW104119200 A TW 104119200A TW I682051 B TWI682051 B TW I682051B
Authority
TW
Taiwan
Prior art keywords
liquid precursor
precursor composition
dad
item
patent application
Prior art date
Application number
TW104119200A
Other languages
English (en)
Chinese (zh)
Other versions
TW201604305A (zh
Inventor
韓元錫
高元勇
Original Assignee
南韓商Ｕｐ化學股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南韓商Ｕｐ化學股份有限公司 filed Critical 南韓商Ｕｐ化學股份有限公司
Publication of TW201604305A publication Critical patent/TW201604305A/zh
Application granted granted Critical
Publication of TWI682051B publication Critical patent/TWI682051B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/04—Nickel compounds
    • C07F15/045—Nickel compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/06—Cobalt compounds
    • C07F15/065—Cobalt compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/406—Oxides of iron group metals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N30/00—Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography or field flow fractionation
    • G01N30/02—Column chromatography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW104119200A 2014-06-13 2015-06-15 液體前驅組成物、其製備方法、以及利用組成物以形成層之方法 TWI682051B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20140072274 2014-06-13
KR10-2014-0072274 2014-06-13

Publications (2)

Publication Number Publication Date
TW201604305A TW201604305A (zh) 2016-02-01
TWI682051B true TWI682051B (zh) 2020-01-11

Family

ID=54833872

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104119200A TWI682051B (zh) 2014-06-13 2015-06-15 液體前驅組成物、其製備方法、以及利用組成物以形成層之方法

Country Status (6)

Country Link
US (2) US10014089B2 (enExample)
JP (1) JP6635950B2 (enExample)
KR (2) KR101936162B1 (enExample)
CN (1) CN106460169B (enExample)
TW (1) TWI682051B (enExample)
WO (1) WO2015190871A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11476158B2 (en) * 2014-09-14 2022-10-18 Entegris, Inc. Cobalt deposition selectivity on copper and dielectrics
TWI736631B (zh) * 2016-06-06 2021-08-21 韋恩州立大學 二氮雜二烯錯合物與胺類的反應
US11078224B2 (en) * 2017-04-07 2021-08-03 Applied Materials, Inc. Precursors for the atomic layer deposition of transition metals and methods of use
KR102103346B1 (ko) * 2017-11-15 2020-04-22 에스케이트리켐 주식회사 박막 증착용 전구체 용액 및 이를 이용한 박막 형성 방법.
KR102123331B1 (ko) * 2018-12-19 2020-06-17 주식회사 한솔케미칼 코발트 전구체, 이의 제조방법 및 이를 이용한 박막의 제조방법
WO2022211218A1 (ko) 2021-04-02 2022-10-06 한국과학기술원 액체금속 전구체 용액, 이를 이용한 금속막 제조방법 및 이를 포함하는 전자소자

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103298971A (zh) * 2010-11-17 2013-09-11 Up化学株式会社 基于二氮杂二烯的金属化合物、其生产方法和使用其形成薄膜的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006000823A1 (de) * 2006-01-05 2007-07-12 H. C. Starck Gmbh & Co. Kg Wolfram- und Molybdän-Verbindungen und ihre Verwendung für die Chemical Vapour Deposition (CVD)
US8636845B2 (en) * 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8485738B2 (en) * 2009-07-31 2013-07-16 Hewlett-Packard Development Company, L.P. Optical fiber connector
US9822446B2 (en) * 2010-08-24 2017-11-21 Wayne State University Thermally stable volatile precursors
US9255327B2 (en) * 2010-08-24 2016-02-09 Wayne State University Thermally stable volatile precursors
WO2013046155A1 (en) 2011-09-27 2013-04-04 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Tungsten diazabutadiene precursors, their synthesis, and their use for tungsten containing film depositions
KR20140085461A (ko) * 2011-09-27 2014-07-07 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 니켈 비스 디아자부타디엔 전구체, 그들의 합성, 및 니켈 함유 필름 침착을 위한 그들의 용도
CN105392917A (zh) 2013-05-24 2016-03-09 Up化学株式会社 使用钨化合物沉积含钨膜的方法和用于沉积含钨膜的包含钨化合物的前体组合物
US9067958B2 (en) * 2013-10-14 2015-06-30 Intel Corporation Scalable and high yield synthesis of transition metal bis-diazabutadienes
US9236292B2 (en) * 2013-12-18 2016-01-12 Intel Corporation Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103298971A (zh) * 2010-11-17 2013-09-11 Up化学株式会社 基于二氮杂二烯的金属化合物、其生产方法和使用其形成薄膜的方法

Also Published As

Publication number Publication date
WO2015190871A1 (en) 2015-12-17
KR20160017094A (ko) 2016-02-15
KR101936162B1 (ko) 2019-01-08
CN106460169A (zh) 2017-02-22
US20160314980A1 (en) 2016-10-27
US20180286529A1 (en) 2018-10-04
US10014089B2 (en) 2018-07-03
KR20170008715A (ko) 2017-01-24
CN106460169B (zh) 2019-04-23
TW201604305A (zh) 2016-02-01
US10763001B2 (en) 2020-09-01
JP6635950B2 (ja) 2020-01-29
JP2017525840A (ja) 2017-09-07

Similar Documents

Publication Publication Date Title
TWI682051B (zh) 液體前驅組成物、其製備方法、以及利用組成物以形成層之方法
TWI307723B (en) Volatile metal ß-ketoiminate and metal ß-diiminate complexes
KR100759779B1 (ko) 휘발성 금속 베타-케토이미네이트 착물
JP2022023872A (ja) ビス（ジアザジエン）コバルト化合物、その製造方法及び使用方法
KR20190064678A (ko) 코발트 화합물, 및 이의 제조 방법 및 사용 방법
Benedet et al. Interplay between coordination sphere engineering and properties of nickel diketonate–diamine complexes as vapor phase precursors for the growth of NiO thin films
JP2006257073A (ja) 有機金属錯体及びそれを使用する堆積方法
TWI481615B (zh) 用於錳的原子層沉積之前驅物及方法
Willcocks et al. Tailoring precursors for deposition: Synthesis, structure, and thermal studies of cyclopentadienylcopper (I) isocyanide complexes
WO2006082739A1 (ja) タンタル化合物、その製造方法、タンタル含有薄膜、及びその形成方法
JP7495086B2 (ja) 有機金属化合物の製造方法およびその方法で得られた有機金属化合物を用いた薄膜
KR20210058370A (ko) 텅스텐 화합물, 이의 제조방법 및 이를 이용한 텅스텐 함유 박막 및 이의 제조방법
KR20150117179A (ko) 지르코늄 함유막 형성용 신규 전구체 화합물, 이를 포함하는 조성물 및 이를 이용한 지르코늄 함유막 형성 방법
TWI672390B (zh) 二取代炔基二鈷六羰基化合物、其製造及使用方法
Jeschke et al. Chemical vapor deposition of ruthenium-based layers by a single-source approach
TW201026876A (en) Nickel-containing film-formation material, and nickel-containing film-fabrication method
KR101965217B1 (ko) 탄탈럼 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법
Tao et al. Organophosphine/phosphite‐stabilized silver (I) complexes bearing N‐acetylbenzamide ligand: synthesis, characterization and potential application in metal organic chemical vapor deposition
Tao et al. Trimethylphosphite stabilized N-silver (I) succinimide complexes as CVD precursors
TW202421637A (zh) 適用於氣相薄膜沉積技術之具有改良熱穩定性的分子內穩定第 13 族金屬錯合物
Nolan Design, Synthesis, and In Situ Characterization of Precursors for the Chemical Vapor Deposition of Tungsten Carbonitride
TW201022465A (en) Material used for forming nickel-containing film and method for manufacturing the nickel-containing film
JPH07188256A (ja) 蒸気圧の高い有機金属化学蒸着による銀薄膜形成用有機銀化合物