JP2006257073A - 有機金属錯体及びそれを使用する堆積方法 - Google Patents
有機金属錯体及びそれを使用する堆積方法 Download PDFInfo
- Publication number
- JP2006257073A JP2006257073A JP2006028539A JP2006028539A JP2006257073A JP 2006257073 A JP2006257073 A JP 2006257073A JP 2006028539 A JP2006028539 A JP 2006028539A JP 2006028539 A JP2006028539 A JP 2006028539A JP 2006257073 A JP2006257073 A JP 2006257073A
- Authority
- JP
- Japan
- Prior art keywords
- group
- metal
- deposition method
- butyl
- organometallic complex
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000002524 organometallic group Chemical group 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000000151 deposition Methods 0.000 title claims abstract description 23
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 78
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 41
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000002243 precursor Substances 0.000 claims abstract description 16
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 15
- 239000010941 cobalt Substances 0.000 claims abstract description 15
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 10
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 9
- 150000004696 coordination complex Chemical class 0.000 claims abstract description 9
- 229910052742 iron Inorganic materials 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 239000010949 copper Substances 0.000 claims abstract description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 8
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 7
- 125000003118 aryl group Chemical group 0.000 claims abstract description 6
- 125000002723 alicyclic group Chemical group 0.000 claims abstract description 5
- 125000003709 fluoroalkyl group Chemical group 0.000 claims abstract description 5
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical group [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims abstract description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052762 osmium Inorganic materials 0.000 claims abstract description 4
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 4
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 4
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 4
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- 239000011701 zinc Substances 0.000 claims abstract description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 19
- 238000005229 chemical vapour deposition Methods 0.000 claims description 15
- 238000000231 atomic layer deposition Methods 0.000 claims description 13
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 10
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 239000003638 chemical reducing agent Substances 0.000 claims description 6
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 claims description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 4
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910001507 metal halide Inorganic materials 0.000 claims description 3
- 150000005309 metal halides Chemical class 0.000 claims description 3
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000000376 reactant Substances 0.000 claims description 3
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 3
- -1 silyl compound Chemical class 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 6
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 125000004428 fluoroalkoxy group Chemical group 0.000 abstract 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 42
- 239000013078 crystal Substances 0.000 description 14
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000011065 in-situ storage Methods 0.000 description 6
- 239000003446 ligand Substances 0.000 description 6
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 6
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000002035 hexane extract Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 238000004467 single crystal X-ray diffraction Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 239000003039 volatile agent Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 150000002902 organometallic compounds Chemical class 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910020676 Co—N Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910008482 TiSiN Inorganic materials 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910008807 WSiN Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000007810 chemical reaction solvent Substances 0.000 description 1
- BKFAZDGHFACXKY-UHFFFAOYSA-N cobalt(II) bis(acetylacetonate) Chemical compound [Co+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O BKFAZDGHFACXKY-UHFFFAOYSA-N 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 239000012452 mother liquor Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012429 reaction media Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- MTIQLOQTQUBOLK-UHFFFAOYSA-N silyl dihydrogen phosphite Chemical class OP(O)O[SiH3] MTIQLOQTQUBOLK-UHFFFAOYSA-N 0.000 description 1
- 238000010099 solid forming Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
Classifications
-
- A—HUMAN NECESSITIES
- A62—LIFE-SAVING; FIRE-FIGHTING
- A62C—FIRE-FIGHTING
- A62C3/00—Fire prevention, containment or extinguishing specially adapted for particular objects or places
- A62C3/02—Fire prevention, containment or extinguishing specially adapted for particular objects or places for area conflagrations, e.g. forest fires, subterranean fires
- A62C3/0221—Fire prevention, containment or extinguishing specially adapted for particular objects or places for area conflagrations, e.g. forest fires, subterranean fires for tunnels
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/06—Cobalt compounds
- C07F15/065—Cobalt compounds without a metal-carbon linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/02—Iron compounds
- C07F15/025—Iron compounds without a metal-carbon linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/04—Nickel compounds
- C07F15/045—Nickel compounds without a metal-carbon linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21F—SAFETY DEVICES, TRANSPORT, FILLING-UP, RESCUE, VENTILATION, OR DRAINING IN OR OF MINES OR TUNNELS
- E21F11/00—Rescue devices or other safety devices, e.g. safety chambers or escape ways
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21F—SAFETY DEVICES, TRANSPORT, FILLING-UP, RESCUE, VENTILATION, OR DRAINING IN OR OF MINES OR TUNNELS
- E21F7/00—Methods or devices for drawing- off gases with or without subsequent use of the gas for any purpose
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mining & Mineral Resources (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Business, Economics & Management (AREA)
- Geology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Emergency Management (AREA)
- Geochemistry & Mineralogy (AREA)
- Health & Medical Sciences (AREA)
- Forests & Forestry (AREA)
- Public Health (AREA)
- Ecology (AREA)
- Biodiversity & Conservation Biology (AREA)
- Pulmonology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
反応性のN,N’−アルキル−1,1−アルキルシリルアミノ金属錯体を良好な収率で生成する能力、
広範囲の電気用途での使用に適した高度にコンフォーマルな金属薄膜を製造する能力、
マイクロエレクトロニクスデバイスでの使用に適した高度にコンフォーマルな金属酸化物薄膜を形成する能力、
錯体の高い化学反応性により、N,N’−アルキル−1,1−アルキルシリルアミノ金属錯体と基材の表面との表面反応を高める能力、及び
N,N’−アルキル−1,1−アルキルシリルアミノ金属錯体のR基の変更により、N,N’−アルキル−1,1−アルキルシリルアミノ金属錯体の物理的性質を調整する能力、
が含まれる。
M{R1R2Si(NR3)(NR4R5)}2
のように表すことができ、上式において、Mは、VIIb、VIII、IX及びX族から選択される金属であり、金属の具体例としては、コバルト、鉄、ニッケル、マンガン、ルテニウム、亜鉛、銅、パラジウム、白金、イリジウム、レニウム、オスミウムが挙げられる。R1-5は、水素、アルキル又はアルコキシ基、フルオロアルキル及びアルコキシ基、アリール及び脂環式基からなる群から選択される。
ここでは、ビス(N,N’−ジ(tert−ブチル)−1,1−ジメチルシリルアミノ)コバルト(II)の合成を説明する。
ここでは、ビス(N,N’−ジ(tert−ブチル)−1,1−ジメチルシリルアミノ)ニッケル(II)の合成を説明する。
ここでは、ビス(N,N’−ジ(tert−ブチル)−1,1−ジメチルシリルアミノ)鉄(II)の合成を説明する。
ここでは、ビス(N,N’−ジ(イソプロピル)−1,1−ジメチルシリルアミノ)コバルト(II)の合成を説明する。
ここでは、ビス(N,N’−ジ(tert−ブチル)−1,1−ジメチルシリルアミノ)コバルト(II)のCVDを説明する。
Claims (20)
- Mが、コバルト、鉄、ニッケル、マンガン、ルテニウム、亜鉛、銅、パラジウム、白金、イリジウム、レニウム及びオスミウムからなる群から選択される、請求項1に記載の有機金属錯体。
- R1-5が、水素及びアルキルからなる群から選択される、請求項2に記載の有機金属錯体。
- 化学名がビス(N,N’−ジ(tert−ブチル)−1,1−ジメチルシリルアミノ)コバルト(II)である、請求項1に記載の有機金属錯体。
- 化学名がビス(N,N’−ジ(tert−ブチル)−1,1−ジメチルシリルアミノ)鉄(II)である、請求項1に記載の有機金属錯体。
- 化学名がビス(N,N’−ジ(tert−ブチル)−1,1−ジメチルシリルアミノ)ニッケル(II)である、請求項1に記載の有機金属錯体。
- 有機金属前駆体を堆積チャンバに入れ、気化させ、そして基材上に堆積させる、基材上に金属又は金属酸化物のコンフォーマルな薄膜を形成するための堆積方法であって、当該有機金属前駆体として請求項1に記載の有機金属錯体を使用することを含むことを特徴とする堆積方法。
- 当該堆積方法が化学気相成長法である、請求項7に記載の堆積方法。
- 当該堆積方法が原子層堆積法である、請求項7に記載の堆積方法。
- 金属薄膜を製造するため前記有機金属前駆体を導入後に堆積チャンバに還元剤を導入する、請求項7に記載の堆積方法。
- 前記還元剤を、水素、ヒドラジン、モノアルキルヒドラジン、ジアルキルヒドラジン、アンモニア及びそれらの混合物からなる群から選択する、請求項11に記載の方法。
- 当該方法が化学気相成長法である、請求項12に記載の堆積方法。
- 当該方法が原子層堆積法である、請求項12に記載の堆積方法。
- 酸素含有反応物を堆積チャンバに導入して金属酸化物膜を作製する、請求項7に記載の堆積方法。
- 酸素含有を、水、O2、H2O2及びオゾンからなる群から選択する、請求項15に記載の方法。
- Mが、鉄、ニッケル、コバルト、銅からなる群から選択される金属である、請求項17に記載の方法。
- R1及びR2がメチル又はメトキシであり、R3、R4及びR5がイソプロピル、sec−ブチル及びtert−ブチルからなる群から選択される、請求項18に記載の方法。
- 得られる金属酸化物膜を、水素、ヒドラジン、モノアルキルヒドラジン、ジアルキルヒドラジン、アンモニア及びそれらの混合物からなる群から選択される還元剤により還元して金属膜にすることができる、請求項15に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/051,140 US7064224B1 (en) | 2005-02-04 | 2005-02-04 | Organometallic complexes and their use as precursors to deposit metal films |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006257073A true JP2006257073A (ja) | 2006-09-28 |
JP4388021B2 JP4388021B2 (ja) | 2009-12-24 |
Family
ID=36272494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006028539A Expired - Fee Related JP4388021B2 (ja) | 2005-02-04 | 2006-02-06 | 有機金属錯体及びそれを使用する堆積方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7064224B1 (ja) |
EP (1) | EP1688426B1 (ja) |
JP (1) | JP4388021B2 (ja) |
KR (1) | KR100665084B1 (ja) |
CN (1) | CN100400705C (ja) |
AT (1) | ATE402184T1 (ja) |
DE (1) | DE602006001873D1 (ja) |
TW (1) | TWI312375B (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008149844A1 (ja) * | 2007-06-04 | 2008-12-11 | Tokyo Electron Limited | 成膜方法及び成膜装置 |
WO2011027835A1 (ja) * | 2009-09-02 | 2011-03-10 | 株式会社アルバック | Co膜の形成方法 |
JP2011066060A (ja) * | 2009-09-15 | 2011-03-31 | Tokyo Electron Ltd | 金属シリサイド膜の形成方法 |
JP2012501543A (ja) * | 2008-08-29 | 2012-01-19 | アプライド マテリアルズ インコーポレイテッド | 障壁表面上のコバルト堆積 |
JP2013189696A (ja) * | 2012-03-15 | 2013-09-26 | Ube Industries Ltd | コバルト膜形成用原料及び当該原料を用いたコバルト含有薄膜の製造方法 |
JP2014535159A (ja) * | 2011-09-29 | 2014-12-25 | インテル・コーポレーション | 半導体用途のための陽性金属含有層 |
JP2015042781A (ja) * | 2013-07-26 | 2015-03-05 | エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated | 揮発性ジヒドロピラジニル及びジヒドロピラジン金属錯体 |
KR20150111359A (ko) * | 2013-01-31 | 2015-10-05 | 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 코발트-함유 화합물, 이의 합성, 및 코발트-함유 필름 침착에서의 용도 |
KR20150113114A (ko) * | 2013-01-31 | 2015-10-07 | 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 코발트-함유 화합물, 이의 합성, 및 코발트-함유 필름 침착에서의 용도 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070281476A1 (en) * | 2006-06-02 | 2007-12-06 | Lavoie Adrien R | Methods for forming thin copper films and structures formed thereby |
EP2155924A2 (en) * | 2007-05-21 | 2010-02-24 | L'air Liquide-societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | New cobalt precursors for semiconductor applications |
KR100892573B1 (ko) * | 2007-10-08 | 2009-04-10 | 한국화학연구원 | 신규의 망간 아미노알콕사이드 화합물 및 그 제조 방법 |
CN102574884B (zh) * | 2009-08-07 | 2016-02-10 | 西格玛-奥吉奇有限责任公司 | 高分子量烷基-烯丙基三羰基钴配合物及其用于制备介电薄膜的用途 |
WO2012057884A1 (en) | 2010-10-29 | 2012-05-03 | Applied Materials, Inc. | Nitrogen-containing ligands and their use in atomic layer deposition methods |
KR102198856B1 (ko) | 2014-02-10 | 2021-01-05 | 삼성전자 주식회사 | 니켈 함유막을 포함하는 반도체 소자의 제조 방법 |
US10329057B2 (en) | 2015-11-11 | 2019-06-25 | Oculus Design LLC | Spill resistant cup lid |
CN106011778B (zh) * | 2016-06-15 | 2018-10-16 | 中国科学院微电子研究所 | 一种单原子层沉积技术生长含Ni薄膜的方法 |
WO2022164698A1 (en) * | 2021-01-26 | 2022-08-04 | Entegris, Inc. | High throughput deposition process |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5314727A (en) | 1992-07-28 | 1994-05-24 | Minnesota Mining & Mfg. Co./Regents Of The University Of Minnesota | Chemical vapor deposition of iron, ruthenium, and osmium |
US5603988A (en) * | 1995-06-02 | 1997-02-18 | Morton International, Inc. | Method for depositing a titanium or tantalum nitride or nitride silicide |
US6214729B1 (en) | 1998-09-01 | 2001-04-10 | Micron Technology, Inc. | Metal complexes with chelating C-, N-donor ligands for forming metal-containing films |
US7494927B2 (en) | 2000-05-15 | 2009-02-24 | Asm International N.V. | Method of growing electrical conductors |
US6777565B2 (en) | 2000-06-29 | 2004-08-17 | Board Of Trustees, The University Of Illinois | Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives |
US6969539B2 (en) * | 2000-09-28 | 2005-11-29 | President And Fellows Of Harvard College | Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide |
US6527855B2 (en) | 2000-10-10 | 2003-03-04 | Rensselaer Polytechnic Institute | Atomic layer deposition of cobalt from cobalt metallorganic compounds |
KR20150067397A (ko) | 2002-11-15 | 2015-06-17 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 금속 아미디네이트를 이용한 원자층 증착법 |
-
2005
- 2005-02-04 US US11/051,140 patent/US7064224B1/en active Active
-
2006
- 2006-01-28 CN CNB2006100089260A patent/CN100400705C/zh not_active Expired - Fee Related
- 2006-01-31 AT AT06001991T patent/ATE402184T1/de not_active IP Right Cessation
- 2006-01-31 EP EP06001991A patent/EP1688426B1/en not_active Not-in-force
- 2006-01-31 DE DE602006001873T patent/DE602006001873D1/de active Active
- 2006-02-03 KR KR1020060010775A patent/KR100665084B1/ko active IP Right Grant
- 2006-02-03 TW TW095103783A patent/TWI312375B/zh not_active IP Right Cessation
- 2006-02-06 JP JP2006028539A patent/JP4388021B2/ja not_active Expired - Fee Related
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009016782A (ja) * | 2007-06-04 | 2009-01-22 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
US8242015B2 (en) | 2007-06-04 | 2012-08-14 | Tokyo Electron Limited | Film forming method and film forming apparatus |
WO2008149844A1 (ja) * | 2007-06-04 | 2008-12-11 | Tokyo Electron Limited | 成膜方法及び成膜装置 |
JP2012501543A (ja) * | 2008-08-29 | 2012-01-19 | アプライド マテリアルズ インコーポレイテッド | 障壁表面上のコバルト堆積 |
JP5593320B2 (ja) * | 2009-09-02 | 2014-09-24 | 株式会社アルバック | Co膜の形成方法 |
WO2011027835A1 (ja) * | 2009-09-02 | 2011-03-10 | 株式会社アルバック | Co膜の形成方法 |
JP2011066060A (ja) * | 2009-09-15 | 2011-03-31 | Tokyo Electron Ltd | 金属シリサイド膜の形成方法 |
JP2014535159A (ja) * | 2011-09-29 | 2014-12-25 | インテル・コーポレーション | 半導体用途のための陽性金属含有層 |
JP2013189696A (ja) * | 2012-03-15 | 2013-09-26 | Ube Industries Ltd | コバルト膜形成用原料及び当該原料を用いたコバルト含有薄膜の製造方法 |
KR20150111359A (ko) * | 2013-01-31 | 2015-10-05 | 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 코발트-함유 화합물, 이의 합성, 및 코발트-함유 필름 침착에서의 용도 |
KR20150113114A (ko) * | 2013-01-31 | 2015-10-07 | 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 코발트-함유 화합물, 이의 합성, 및 코발트-함유 필름 침착에서의 용도 |
JP2016513086A (ja) * | 2013-01-31 | 2016-05-12 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | コバルト含有化合物、その合成及びコバルト含有膜の堆積におけるその使用 |
JP2018118989A (ja) * | 2013-01-31 | 2018-08-02 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | コバルト含有化合物、その合成及びコバルト含有膜の堆積におけるその使用 |
KR102181249B1 (ko) | 2013-01-31 | 2020-11-20 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 코발트-함유 화합물, 이의 합성, 및 코발트-함유 필름 침착에서의 용도 |
KR102209476B1 (ko) | 2013-01-31 | 2021-01-28 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 코발트-함유 화합물, 이의 합성, 및 코발트-함유 필름 침착에서의 용도 |
JP2015042781A (ja) * | 2013-07-26 | 2015-03-05 | エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated | 揮発性ジヒドロピラジニル及びジヒドロピラジン金属錯体 |
US9994954B2 (en) | 2013-07-26 | 2018-06-12 | Versum Materials Us, Llc | Volatile dihydropyrazinly and dihydropyrazine metal complexes |
Also Published As
Publication number | Publication date |
---|---|
US7064224B1 (en) | 2006-06-20 |
TWI312375B (en) | 2009-07-21 |
CN1814605A (zh) | 2006-08-09 |
EP1688426B1 (en) | 2008-07-23 |
EP1688426A1 (en) | 2006-08-09 |
KR100665084B1 (ko) | 2007-01-09 |
KR20060089677A (ko) | 2006-08-09 |
CN100400705C (zh) | 2008-07-09 |
TW200628627A (en) | 2006-08-16 |
DE602006001873D1 (de) | 2008-09-04 |
JP4388021B2 (ja) | 2009-12-24 |
ATE402184T1 (de) | 2008-08-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4388021B2 (ja) | 有機金属錯体及びそれを使用する堆積方法 | |
JP6596737B2 (ja) | アミドイミン配位子を含む金属複合体 | |
KR101062591B1 (ko) | 탄탈-기반 재료의 증착을 위한 화학 증기 증착 전구체 | |
KR101584390B1 (ko) | 전이 금속 함유 필름의 침착을 위한 헤테로렙틱 시클로펜타디에닐 전이 금속 전구체 | |
CN108794521B (zh) | 新三甲硅烷基胺衍生物、其制备方法以及使用其的含硅薄膜 | |
WO2016143456A1 (ja) | ジアザジエニル化合物、薄膜形成用原料、薄膜の製造方法及びジアザジエン化合物 | |
KR20120053479A (ko) | 다이아자다이엔계 금속 화합물, 이의 제조 방법 및 이를 이용한 박막 형성 방법 | |
WO2017043620A1 (ja) | 有機ルテニウム化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 | |
TWI727091B (zh) | 含有烯丙基配位體之金屬錯合物 | |
KR102541122B1 (ko) | 신규 화합물, 박막 형성용 원료 및 박막의 제조 방법 | |
JP6574312B2 (ja) | タングステン前駆体及びそれを含むタングステン含有フィルム蒸着方法 | |
TW201311702A (zh) | 雜配位(烯丙基)(吡咯-2-醛亞胺鹽(aldiminate))含金屬前驅物其合成及其氣相沈積以沈積含金屬膜 | |
TWI682051B (zh) | 液體前驅組成物、其製備方法、以及利用組成物以形成層之方法 | |
JP2009007333A (ja) | 金属含有錯体及びそれを用いた被着法 | |
TWI481615B (zh) | 用於錳的原子層沉積之前驅物及方法 | |
US8148564B2 (en) | Compounds for forming metal nitrides | |
US6982341B1 (en) | Volatile copper aminoalkoxide complex and deposition of copper thin film using same | |
KR20210058370A (ko) | 텅스텐 화합물, 이의 제조방법 및 이를 이용한 텅스텐 함유 박막 및 이의 제조방법 | |
JP2002542397A (ja) | 銅薄膜の化学蒸着のための有機銅(i)前駆体 | |
US8907115B2 (en) | Synthesis and characterization of first row transition metal complexes containing α-keto hydrazonate ligands as potential precursors for use in metal film deposition | |
KR20210058289A (ko) | 텅스텐 전구체, 이의 제조방법 및 이를 이용한 텅스텐 함유 박막 및 이의 제조방법 | |
WO2024141067A1 (zh) | 前驱体材料、前体组合物以及沉积形成膜层的方法 | |
CN114008238B (zh) | 由有机锰化合物构成的化学蒸镀用原料和使用该化学蒸镀用原料的化学蒸镀法 | |
KR20230089234A (ko) | 몰리브데넘 화합물, 이의 제조방법 및 이를 포함하는 박막 증착용 조성물 | |
CN116529417A (zh) | 新型化合物、包含其的前体组合物和利用其的薄膜的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090512 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090805 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090901 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20091001 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4388021 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121009 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121009 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131009 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |