TWI681148B - 光波長轉換構件及發光裝置 - Google Patents
光波長轉換構件及發光裝置 Download PDFInfo
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- TWI681148B TWI681148B TW106137047A TW106137047A TWI681148B TW I681148 B TWI681148 B TW I681148B TW 106137047 A TW106137047 A TW 106137047A TW 106137047 A TW106137047 A TW 106137047A TW I681148 B TWI681148 B TW I681148B
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- Prior art keywords
- wavelength conversion
- crystal particles
- conversion member
- light
- crystal
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 40
- 230000003287 optical effect Effects 0.000 title claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 91
- 239000002245 particle Substances 0.000 claims abstract description 85
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 48
- 239000000919 ceramic Substances 0.000 claims abstract description 34
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 4
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 4
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 4
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 4
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000010304 firing Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical class [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000002270 dispersing agent Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000012921 fluorescence analysis Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
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Abstract
提供能夠兼顧高螢光強度與高色均質性的光波長轉換構件及發光裝置。在光波長轉換構件1中,A3B5O12中的A與B係從下述元素群組所選出的至少一種元素,A:Sc、Y、鑭系(不包括Ce)
B:Al、Ga
且陶瓷燒結體的切斷面的20μm見方的範圍內的A3B5O12:Ce結晶粒子N個內,將存在於Al2O3結晶粒子內者的個數設為a個,將不與其他A3B5O12:Ce結晶粒子相接而存在於Al2O3結晶粒界者的個數設為b個,將與1個以上的其他A3B5O12:Ce結晶粒子相接而存在於Al2O3結晶粒界者的個數設為c個,將相對於各個數的整體比例a/N、b/N、c/N分別設為X、Y、Z時,各比例滿足下述範圍。
0%≦X≦25%
9%≦Y≦45%
48%≦Z≦90%
Description
本發明係關於可以轉換光的波長的光波長轉換構件及具備該光波長轉換構件的發光裝置。
至今以來,將發光二極體(LED:Light Emitting Diode)、半導體雷射(LD:Laser Diode)作為光源的白色的照明機器,係將藍色LED、藍色LD與藍色的補色的黃色螢光體組合而得到白色的照明機器為主流。
作為此螢光體的材質,已知有樹脂系、玻璃系、陶瓷系,但近年來,因光源的高輸出化,螢光體有高溫化的傾向,正在進行耐久性高的陶瓷系螢光體的開發。
例如,作為前述陶瓷系螢光體,大多使用化學式A3B5O12所表示的石榴石型的陶瓷。特別是,釔鋁石榴石(YAG:Y3Al5O12)藉由添加鈰(Ce)元素作為活化劑,而成為顯示黃色的螢光。
此外,下述的先前技術(專利文獻1~3)提出了使YAG:Ce或Lu3Al5O12:Ce(LuAG:Ce)分散析出於導熱性優異的氧化鋁(Al2O3)中,從而使耐久性等提高的陶瓷複合體。
具體而言,前述專利文獻1~3係以Al2O3/A3B5O12:Ce的體積比例來控制顏色不均與導熱率的平衡。例如,專利文獻1係將YAG:Ce量設為整體的22~55vol%,在小於22vol%的情況下藍色光的透射變多,產生顏色不均,在比55vol%多的情況下導熱率降低,耐久性降低。
此外,專利文獻2係LuAG:Ce量成為25~95vol%。再者,專利文獻3係A3B5O12:Ce量成為20~25vol%。而且,此專利文獻3,為了控制燒成時的Ce的揮發,而設為含有0.5~5vol%的CeAl11O18作為Ce供應源。
專利文獻1 日本專利第5088977號公報
專利文獻2 日本專利第5153014號公報
專利文獻3 日本專利第5740017號公報
然而,這些先前技術,特別是為了不控制結晶組織而使石榴石系的螢光成分析出於Al2O3中,而藉由體積比例,以不發生顏色不均的方式,換言之,以可得到高色均質性的方式來進行。因此,損害了螢光強度、透光性等原本作為螢光體的重要特性,而稱不上是能夠充分發揮螢光特性的狀態。
此外,專利文獻3中的CeAl11O18並非同時具有螢光性‧透光性,因此因包含在燒結體中而成為進一步損害上述的螢光特性的因素。本發明係有鑑於前述課題所完成的發明,其目的在於提供能夠兼顧高螢光強度與高色均質性的光波長轉換構件及發光裝置。
(1)本發明的第一態樣係關於由以Al2O3結晶粒子與化學式A3B5O12:Ce所表示的成分的結晶粒子作為主要成分的多結晶體的陶瓷燒結體所構成的光波長轉換構件。
此光波長轉換構件,A3B5O12中的A與B係從下述元素群組所選出的至少一種元素。
A:Sc、Y、鑭系(不包括Ce)
B:Al、Ga
而且,陶瓷燒結體的切斷面的20μm見方的範圍內的A3B5O12:Ce結晶粒子N個內,將存在於Al2O3結晶粒子內者的個數設為a個,將不與其他A3B5O12:Ce結晶粒子相接而存在於Al2O3結晶粒界者的個數設為b個,將與1個以上的其他A3B5O12:Ce結晶粒子相接而存在於Al2O3結晶粒界者的個數設為c個,將相對於各個數的整體比例a/N、b/N、c/N分別設為X、Y、Z時,各比例滿足下述範圍。
0%≦X≦25%
9%≦Y≦45%
48%≦Z≦90%
依此方式,本第一態樣的光波長轉換構件具備上述的結構,如同可由後述的實施例得知,能夠實現高螢光強度與高色均質性(即顏色不均少)。以下,詳細地進行說明。
符合前述X的A3B5O12:Ce結晶粒子被完全吸收於Al2O3結晶粒子內,因此能夠抑制Ce的揮發。藉此,不會產生Ce的濃度差,可以顯示沒有顏色不均的穩定的螢光性。
此處,若X比25%多,則單獨存在於Al2O3結晶粒界的A3B5O12:Ce結晶粒子的比例(Y)變少,變得產生不了抑制Al2O3的粒子成長的效果即所謂的釘扎效果,Al2O3進行粒子成長,透射性變低,結果螢光強度降低。又,在X比1%少的情況下,有顏色不均變多的傾向。
藉由前述Y位於上述範圍內,對Al2O3產生了釘扎效果,Al2O3的粒子成長受到抑制。其結果,即使取出螢光亦變得可得到充分的透光性。
此處,若Y小於9%,則無法充分發揮釘扎效果,引起Al2O3的粒子成長,其結果因透射性不足而螢光強度降低,再加上因粒子的粗大化而變得容易產生顏色不均。另一方面,若Y比45%多,則Al2O3/A3B5O12:Ce粒界的光分散變多,透光性降低,因此其結果是螢光強度降低。
在前述A3B5O12:Ce/A3B5O12:Ce粒界中,未產生光分散,因此藉由前述Z位於上述範圍內,具有可取出充分的螢光的程度的透光性。此處,若Z小於 48%,則造成伴隨透光性不足而來的螢光強度的降低。另一方面,若Z比90%多,則透光性變得過高,因此激發光的透射量變多,產生顏色不均。此外,變得難以形成Al2O3結晶粒子彼此的連結路徑,導熱率降低。
由此,藉由將前述X、Y、Z的範圍設在上述範圍內,能夠實現高螢光強度與高色均質性。此外,本第一態樣的光波長轉換構件係藉由上述的結構而具有高導熱性,因此即使是在將光源高輸出化的情況下,也能夠抑制由熱所產生的影響,例如能夠防止光的消失。
另外,此光波長轉換構件係陶瓷燒結體,因此強度高,而且即使是在被光源重複照射光的情況下,性能也不太會劣化,再加上,有耐候性也優異這樣的優點。
(2)本發明的第二態樣,在陶瓷燒結體中所佔的A3B5O12:Ce結晶粒子的比例為5~50vol%。本第二態樣中,A3B5O12:Ce結晶粒子的比例為5~50vol%,因此如同由後述的實施例得知般,有可得到充分的螢光強度這樣的優點。
(3)本發明的第三態樣中,Ce的比例係相對於A3B5O12的A為10.0mol%以下(但不包含0)。本第三態樣中,Ce的比例係相對於A3B5O12的A為10.0mol%以下(但不包含0),因此如同由後述的實施例得知般,有可得到充分的螢光強度這樣的優點。
(4)本發明的第四態樣中,Al2O3結晶粒子的平均結晶粒徑為0.3~10μm,A3B5O12:Ce結晶粒子的 平均結晶粒徑為0.3~5μm。本第四態樣中,Al2O3結晶粒子的平均結晶粒徑為0.3~10μm,A3B5O12:Ce結晶粒子的平均結晶粒徑為0.3~5μm,因此如同由後述的實施例得知般,有可得到充分的螢光強度與適度的透光性這樣的優點。
這意味著在上述的平均結晶粒徑的情況下,變得容易達成包含第一態樣中的前述X、Y、Z的比例的結晶粒狀態。
(5)本發明的第五態樣係具備第一至四態樣中任一者的光波長轉換構件的發光裝置。
以本第五態樣的發光裝置(詳言之,為光波長轉換構件)轉換波長的光(即,螢光)係具有高螢光強度與高色均質性。又,作為發光裝置的發光元件,能使用例如LED、LD等公知的元件。
‧前述「光波長轉換構件」係具有上述結構的陶瓷燒結體,在各結晶粒子的粒界中可以包含構成各結晶粒子的成分的一部分等或不可避免的雜質。
‧前述「主要成分」係表示前述結晶粒子在光波長轉換構件中,存在最多的量(體積)。
‧前述「A3B5O12:Ce」係表示Ce固溶取代在A3B5O12中的A的一部分上,藉由具有這樣的構造,同化合物變得顯示螢光特性。
‧前述「光波長轉換構件的切斷面」係指光透射的部分中的至少一個部位的切斷面。又,在例如觀察複數個部位(例如5個部位)的切斷面的情況下,能夠採用其平均的值滿足X、Y、Z者。此外,在各切斷面中,在複數個部位(例如5個部位)求出X、Y、Z的情況下,能夠採用其平均值。
‧又,為了將前述X、Y、Z設在上述範圍內,如後述,必須將分散劑量、燒成條件設為適當的條件。例如,若燒成溫度過低,則X變少,因而不佳。此外,若分散劑量過多,則Y變少,若分散劑量過少,則Z變多,因此必須設為適當的條件。
1‧‧‧光波長轉換構件
3‧‧‧發光裝置
5‧‧‧容器
7‧‧‧發光元件
9‧‧‧開口部
Ka‧‧‧Al2O3結晶粒子內的A3B5O12:Ce結晶粒子
Kb‧‧‧單獨存在於Al2O3粒界的A3B5O12:Ce結晶粒子
Kc‧‧‧在Al2O3粒界與一個以上的A3B5O12:Ce結晶粒子相接的A3B5O12:Ce結晶粒子
圖1係實施形態的光波長轉換構件的組織的概略圖。
圖2係顯示在厚度方向上將發光裝置斷裂的剖面的剖面圖。
接著,針對本發明的光波長轉換構件及發光裝置的實施形態進行說明。
首先,針對實施形態的光波長轉換構件進行說明。如圖1所示,實施形態的光波長轉換構件1(參照圖2)係 例如板狀的陶瓷燒結體,由以Al2O3結晶粒子與化學式A3B5O12:Ce所表示的成分的結晶粒子(以下,也有記為A3B5O12:Ce結晶粒子的情形)作為主要成分的多結晶體所構成。
在此光波長轉換構件1中,A3B5O12中的A與B係從下述元素群組所選出的至少一種元素。
A:Sc、Y、鑭系(不包括Ce)
B:Al、Ga
而且,陶瓷燒結體的切斷面的20μm見方的範圍內的A3B5O12:Ce結晶粒子N個內,將存在於Al2O3結晶粒子內者的個數設為a個,將不與其他A3B5O12:Ce結晶粒子相接而存在於Al2O3結晶粒界者的個數設為b個,將與1個以上的其他A3B5O12:Ce結晶粒子相接而存在於Al2O3結晶粒界者的個數設為c個,將相對於各個數的整體比例a/N、b/N、c/N分別設為X、Y、Z時,各比例滿足下述範圍。
0%≦X≦25%
9%≦Y≦45%
48%≦Z≦90%
又,圖1中,用Ka表示了相當於a(也就是X)者,即Al2O3結晶粒子內的A3B5O12:Ce結晶粒子。此外,用Kb表示了相當於b(也就是Y)者,即單獨存在於Al2O3粒界的A3B5O12:Ce結晶粒子。再者,用Kc表示了相當於c(也就是Z)者,即在Al2O3粒界與一個以上的A3B5O12:Ce結晶粒子相接的A3B5O12:Ce結晶粒子。
此外,在本實施形態中,作為在陶瓷燒結體中所佔的A3B5O12:Ce結晶粒子的比例,能夠採用5~50vol%。另外,在本實施形態中,Ce的比例能夠採用相對於A3B5O12的A為10.0mol%以下(但不包含0)。
而且,在本實施形態中,能夠採用Al2O3結晶粒子的平均結晶粒徑為0.3~10μm,A3B5O12:Ce結晶粒子的平均結晶粒徑為0.3~5μm。
如圖2所示,發光裝置3具備:例如氧化鋁等的箱狀的陶瓷製的封裝體(容器)5、配置在容器5的內部的例如LD等的發光元件7、及以覆蓋容器5的開口部9的方式所配置的板狀的光波長轉換構件1。
此發光裝置3中,從發光元件7所放射的光透射光波長轉換構件1的同時,該光的一部分在光波長轉換構件1的內部被轉換波長而發光。即,光波長轉換構件1中,發出波長與從發光元件7所放射的光的波長不同的螢光。
接著,說明實施形態的效果。
如上所述,本實施形態的光波長轉換構件1規定了X、Y、Z的比例等,因此能夠實現高螢光強度與高色均質性。
此外,本實施形態的光波長轉換構件1係具有高導熱性,因此即使是在將光源高輸出化的情況下,也能夠抑制由熱所產生的影響,例如能夠防止光的消失。
另外,本實施形態的光波長轉換構件1係陶瓷燒結體,因此強度高,而且即使是在被光源重複照射光的情況下,性能也不太會劣化,再加上有耐候性也優異這樣的優點。
此外,在A3B5O12:Ce結晶粒子的比例為5~50vol%的情況下,有可得到充分的螢光強度這樣的優點。
再者,在Ce的比例係相對於A3B5O12的A為10.0mol%以下(但不包含0)的情況下,有可得到充分的螢光強度這樣的優點。
而且,在Al2O3結晶粒子的平均結晶粒徑為0.3~10μm,A3B5O12:Ce結晶粒子的平均結晶粒徑為0.3~5μm的情況下,有可得到充分的螢光強度與適度的透光性這樣的優點。
由此,具備前述光波長轉換構件1的發光裝置3發揮能夠產生具有高螢光強度與高色均質性的螢光這樣的效果。
接著,針對具體的各實施例進行說明。
利用下述表1及表2所示的條件,製作No.1~9的陶瓷燒結體的試料。又,各試料當中,No.1~9為本發明的範圍內的試料。
具體而言,對各試料,以陶瓷燒結體(即構成光波長轉換構件的陶瓷燒結體)中的YAG(Y3Al5O12)的 比例成為21vol%的方式,或者,以Ce濃度相對於YAG中的Y成為1mol%的方式,秤量Al2O3(平均粒徑0.3μm)與Y2O3(平均粒徑1.2μm)、CeO2(平均粒徑1.5μm)。
將其連同純水與既定量的分散劑(以固形物換算,相對於原料粉末為2wt%)投入球磨機中,進行12hr粉碎混合。將所得到的漿料進行乾燥‧造粒,使用該造粒物製作成形體。然後,在常壓下的大氣中,在燒成溫度1450℃~1750℃、保持時間3~20小時下將此成形體進行燒成。藉此,得到No.1~9的陶瓷燒結體的試料(例如板狀試料)。
又,作為分散劑,例如,能夠使用多元羧酸系分散劑的Sunnopco公司製的SN DISPERSANT5468、日本油脂股份有限公司製的Malialim AKM-0531。
接著,針對所得到的陶瓷燒結體,與後述的其他實施例同樣地,調查下述的特性(a)~(f)。將其結果記錄於下述表2。
所得到的陶瓷燒結體的相對密度係以用阿基米德法測定密度,將測定的密度以換算為相對密度的方法算出。
將試料(樣品)進行鏡面研磨後,在1300℃下進行熱蝕刻。用掃描型電子顯微鏡觀察蝕刻面(即進行SEM觀察),得到陶瓷燒結體中的任意部位的5000倍的影像。又,作為任意部位,在試料為例如矩形板狀的情 況下,可舉出從光透射的部分的厚度方向觀看(俯視下)的中心位置。
然後,在前述位置的影像(例如參照圖1)中的20μm見方當中畫出任意線條,由截取法求出Al2O3結晶粒子與A3B5O12:Ce結晶粒子的平均結晶粒徑。
與前述(b)同樣地,將樣品進行鏡面研磨後,在1300℃下進行熱蝕刻。將蝕刻面進行SEM觀察,得到陶瓷燒結體中的任意部位的5000倍的影像。數出影像中的20μm見方當中的粒子個數a、b、c,算出比例X、Y、Z。針對任意5個視野進行相同的處理,求出X、Y、Z的平均值。又,關於此研磨後的表面係相當於本發明的切斷面。
對加工為13mm見方×厚度0.5mm的樣品,用透鏡使具有465nm波長的藍色LD光集光至寬度0.5mm以進行照射,利用透鏡使透射的光集光,由功率感測器(power sensor)測定其發光強度。此時,以所照射的功率密度成為40W/mm2的方式操作。又,該強度係以將YAG:Ce單結晶體的強度設為100時的相對值來評價。
顏色不均(即顏色變異)係藉由利用照度計的色度變異測定來評價。對加工為20mm見方×厚度0.5mm的樣品,用透鏡使具有465nm波長的藍色LD光集光而作成寬度0.5mm,照射它並對從相反面透射而來的光,藉由色彩照度計測定色度。
照射係在樣品的照射面(樣品面)的中央設定18mm見方的區域,在該區域內以3mm間隔進行,評價其色度(X方向)的變異(△X)。此處,變異(△X)係指色度(X方向)的偏差的最大值。
又,色度係指用國際照明委員會(CIE)在1931年制定的國際表示法,由CIE-XYZ表色系所表示的色度。即,將表色上的3原色數值化,以xy座標空間表示顏色的xy色度圖(所謂的CIE色度圖)所表示的色度。
對加工為10mm見方×厚度2mm的樣品,測定導熱率。具體的作法係根據JIS R1611。
然後,依上述方式操作各試料所得到的結果當中,關於螢光強度、顏色不均、導熱率,能夠依照如下的評價基準評價。又,其他實施例也能夠同樣地評價。
對於螢光強度,認為較佳為110以上,稍佳為100以上小於110,不佳為小於100。對於顏色不均,認為較佳為△X<0.02,稍佳為0.02≦△X<0.06,不佳為0.06≦△X。
對於導熱率,認為較佳為20W/m‧K以上,不佳為小於20W/m‧K。以下,針對本實施例1,對於根據前述評價基準的評價等進行說明。
在實施例1的任一試料中,相對密度皆為99%以上而充分緻密化。此外,得知Al2O3的平均結晶粒徑(表2中記錄為Al2O3粒徑)位於0.3~10μm的範圍內, A3B5O12:Ce(YAG:Ce)的平均結晶粒徑(表2中記錄為A3B5O12粒徑)位於0.3~5μm的範圍內。
然後,X、Y、Z位於本發明的範圍內的No.3~9係螢光強度、顏色不均、導熱率皆成為良好的結果。此外,位於本發明的範圍內的No.1~2(但是燒成溫度比其他試料低者)係顏色不均變得比其他的No.3~9大。
用與實施例1同樣的製造方法,如下述表1及表2所示,製作陶瓷燒結體的試料(No.10~15的試料),同樣地進行評價。
但是,在調合時使分散劑量在1.8~5wt%的範圍內變化,或是使燒成時間在5~20小時的範圍內變化。又,各試料當中,No.11~14係本發明的範圍內的試料,No.10、15係本發明的範圍外(比較例)的試料。
其結果,在任一試料中,相對密度皆為99%以上而充分緻密化。此外,除了No.10之外,得知Al2O3的平均結晶粒徑位於0.3~10μm的範圍內,A3B5O12:Ce(YAG:Ce)的平均結晶粒徑位於0.3~5μm的範圍內。此外,由下述表2可知,X、Y、Z位於本發明的範圍內的No.11~14係螢光強度、顏色不均、導熱率皆成為良好的結果。另一方面,Y少的No.10係Al2O3的平均結晶粒徑為11μm而變得稍微粗大,螢光強度變得稍低,顏色不均變大。此外,在Y多、Z更少的No.15中,成為低於100的低螢光強度。
用與實施例1同樣的製造方法,如下述表1及表2所示,製作陶瓷燒結體的試料(No.16~20的試料),同樣地進行評價。
但是,在調合時使分散劑量在0~1.5wt%的範圍內變化。又,各試料當中,No.16~19係本發明的範圍內的試料,No.20係本發明的範圍外(比較例)的試料。
其結果,在任一試料中,相對密度皆為99%以上而充分緻密化。此外,得知Al2O3的平均結晶粒徑位於0.3~10μm,A3B5O12:Ce(YAG:Ce)的平均結晶粒徑位於0.3~5μm。
此外,由下述表2可知,X、Y、Z位於本發明的範圍內的No.16~19係螢光強度‧顏色不均‧導熱率皆成為良好的結果。另一方面,Y少、Z多的No.20係螢光強度變得稍低,顏色不均變大,此外,導熱率變低。
用與實施例1同樣的製造方法,如下述表1及表2所示,製作陶瓷燒結體的試料(No.21~28的本發明的範圍的試料),同樣地進行評價。
但是,以陶瓷燒結體中的A3B5O12:Ce量(YAG:Ce量)成為1~60vol%的方式使原料摻合比改變。其結果,在任一試料中,相對密度皆為99%以上而充分緻密化。此外,得知Al2O3的平均結晶粒徑位於0.3~10μm的範圍內,A3B5O12:Ce(YAG:Ce)的平均結晶粒徑位於0.3~5μm的範圍內。
此外,由下述表2可知,YAG:Ce量位於既定範圍內(即5~50vol%)的No.23~27係螢光強度‧顏色不均‧導熱率皆成為良好的結果。另一方面,YAG:Ce量少的No.21、22係螢光強度變得稍低,顏色不均變得稍大。此外,YAG:Ce量多的No.28係螢光強度變得稍低,導熱率也變低。
用與實施例1同樣的製造方法,如下述表1及表2所示,製作陶瓷燒結體的試料(No.29~38的本發明的範圍的試料),同樣地進行評價。
但是,以相對於燒結體的A3B5O12(YAG)中的Y的Ce濃度成為0~15mol%的方式使原料摻合比改變。
其結果,在任一試料中,相對密度皆為99%以上而充分緻密化。此外,得知Al2O3的平均結晶粒徑位於0.3~10μm的範圍內,A3B5O12:Ce(YAG:Ce)的平均結晶粒徑位於0.3~5μm的範圍內。
此外,由下述表2可知,Ce濃度位於既定範圍內(即10.0mol%以下(但不包含0))的No.30~37係螢光強度‧顏色不均‧導熱率皆成為良好的結果。另一方面,不包含Ce的No.29係螢光強度‧顏色不均都無法測定。此外,Ce濃度高的No.38係螢光強度變得稍低。
用與實施例1同樣的製造方法,如下述表1及表2所示,製作陶瓷燒結體的試料(No.39~59的本發明的範圍的試料),同樣地進行評價。
但是,在調合時不僅使用Y2O3粉末,還使用一個以上的Lu2O3(平均粒徑1.3μm)或Yb2O3(平均粒徑1.5μm)、Gd2O3(平均粒徑1.5μm)、Tb2O3(平均粒徑1.6μm)、Ga2O3(平均粒徑1.3μm)的各粉末,以能夠合成既定的A3B5O12:Ce的方式使摻合比改變。
其結果,在任一試料中,相對密度皆為99%以上而充分緻密化。此外,得知Al2O3的平均結晶粒徑位於0.3~10μm的範圍內,A3B5O12:Ce(YAG:Ce)的平均結晶粒徑位於0.3~5μm的範圍內。
在全部的陶瓷燒結體中,螢光強度‧顏色不均‧導熱率皆成為良好的結果。
本發明完全不受前述實施形態限定,不用特別闡明可以在不脫離本發明的範圍內以各種態樣實施。
(1)例如,在前述實施例中,使用大氣中的常壓燒成法作為燒成方法,但除此之外,也能夠藉由真空氣體環境燒成法、還原氣體環境燒成法、熱壓(HP)法、熱等向壓加壓(HIP)法或組合它們的燒成方法來製作具有同等性能的樣品。
(2)作為前述光波長轉換構件、發光裝置的用途,可舉出:螢光體、光波長轉換機器、頭燈、照明、投影機等光學機器等各種用途。
(3)又,可以使複數個結構要素分擔上述實施形態中的一個結構要素所具有的功能,或使一個結構要素發揮複數個結構要素所具有的功能。此外,可以省略上述實施形態的結構的一部分。此外,可以將上述實施形態的結構的至少一部分,對其他實施形態的結構進行附加、取代等。又,由申請專利範圍中記載的詞句所特定的技術思想所含的全部態樣都是本發明的實施形態。
Claims (6)
- 一種光波長轉換構件,其係由以Al 2O 3結晶粒子與化學式A 3B 5O 12:Ce所表示的成分的結晶粒子作為主要成分的多結晶體的陶瓷燒結體所構成的光波長轉換構件,其特徵為:該A 3B 5O 12中的A與B係從下述元素群組所選出的至少1種元素,A:Sc、Y、鑭系(不包括Ce)B:Al、Ga且該陶瓷燒結體的切斷面的20μm見方的範圍內的該A 3B 5O 12:Ce結晶粒子N個內,將存在於該Al 2O 3結晶粒子內者的個數設為a個,將不與其他的該A 3B 5O 12:Ce結晶粒子相接而存在於Al 2O 3結晶粒界者的個數設為b個,將與1個以上的其他的該A 3B 5O 12:Ce結晶粒子相接而存在於該Al 2O 3結晶粒界者的個數設為c個,將相對於各個數的整體比例a/N、b/N、c/N分別設為X、Y、Z時,各比例滿足下述範圍,0%≦X≦25% 9%≦Y≦45% 48%≦Z≦90%。
- 如請求項1的光波長轉換構件,其中在該陶瓷燒結體中所佔的該A 3B 5O 12:Ce結晶粒子的比例為5~50vol%。
- 如請求項1的光波長轉換構件,其中該Ce的比例係相對於該A 3B 5O 12的A為10.0mol%以下(但不包含0)。
- 如請求項2的光波長轉換構件,其中該Ce的比例係相對於該A 3B 5O 12的A為10.0mol%以下(但不包含0)。
- 如請求項1至4中任一項的光波長轉換構件,其中該Al 2O 3結晶粒子的平均結晶粒徑為0.3~10μm,該A 3B 5O 12:Ce結晶粒子的平均結晶粒徑為0.3~5μm。
- 一種發光裝置,其特徵為:具備如該請求項1至5中任一項的光波長轉換構件。
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EP3534192B1 (en) | 2021-09-15 |
TW201823633A (zh) | 2018-07-01 |
KR102196577B1 (ko) | 2020-12-30 |
EP3534192A1 (en) | 2019-09-04 |
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