TWI681147B - 光波長轉換構件及發光裝置 - Google Patents

光波長轉換構件及發光裝置 Download PDF

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TWI681147B
TWI681147B TW106137045A TW106137045A TWI681147B TW I681147 B TWI681147 B TW I681147B TW 106137045 A TW106137045 A TW 106137045A TW 106137045 A TW106137045 A TW 106137045A TW I681147 B TWI681147 B TW I681147B
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wavelength conversion
crystal
conversion member
light
concentration
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TW201823632A (zh
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茂木淳
高久翔平
勝祐介
光岡健
伊藤經之
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日商日本特殊陶業股份有限公司
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Abstract

提供能夠兼顧高螢光強度和高色均質性的光波長轉換構件及發光裝置。發光裝置1具備容器3、發光元件5和光波長轉換構件9。光波長轉換構件9係由以Al2O3結晶粒子和化學式A3B5O12：Ce所表示的成分的結晶粒子作為主要成分的多結晶體的陶瓷燒結體所構成的光波長轉換構件(9)。詳言之，A3B5O12中的A和B係從下述元素群組所選出的至少一種元素，且前述Ce之元素分布在陶瓷燒結體的各結晶粒子內與結晶粒界的同時，分布在各結晶粒子內與結晶粒界的前述Ce之元素係結晶粒界的濃度比各結晶粒子內的濃度高。A：Sc、Y、鑭系(不包括Ce)B：Al、Ga。

Description

光波長轉換構件及發光裝置
本發明係關於可以轉換光的波長的光波長轉換構件及具備該光波長轉換構件的發光裝置。
在頭燈、各種照明機器等方面，係利用螢光體將發光二極體(LED：Light Emitting Diode)、半導體雷射(LD：Laser Diode)的藍色光轉換波長而得到白色的裝置成為主流。
作為螢光體，已知有樹脂系、玻璃系等，但近年來，正在進行光源的高輸出化，就螢光體來說，由於變得要求更高的耐久性，因此陶瓷螢光體受到關注。
作為此陶瓷螢光體，已知有以Y3Al5O12：Ce(YAG：Ce)所代表的石榴石構造(A3B5O12)的成分中Ce被活化的螢光體。
例如下述專利文獻1中公開了使YAG：Ce複合化於Al2O3中，從而使耐熱性、導熱性提升的技術。
先前技術文獻 專利文獻
專利文獻1 日本專利第4609319號公報
專利文獻2 日本專利第5740017號公報
然而，這些先前技術係藉由包含Al2O3來具有比YAG：Ce單一組成高的導熱性，其結果，雖然耐熱性、耐雷射輸出性提高，但是有如下的問題。
例如專利文獻1中記載的技術，由於利用一方向凝固法製造燒結體，因此僅能製作以體積比計其組成為Al2O3/YAG：Ce=55/45者，螢光強度、顏色不均(顏色變異)等的螢光特性止步於限定的特性。
此外，專利文獻2中記載的技術，為了防止伴隨由燒成中的Ce蒸發所產生的Ce濃度不均而來的顏色不均，而使CeAl11O18析出於結晶中，但CeAl11O18本身不具有螢光特性，因此因有該物質存在而損害了燒結體整體的螢光特性。
而且，在任一先前技術中，達不到控制至微小的粒界部，相對於以往的樹脂系、玻璃系螢光體，螢光強度、顏色不均等的螢光特性差。
本發明係有鑑於前述課題所完成者，其目的在於提供能夠兼顧高螢光強度和高色均質性的光波長轉換構件及發光裝置。
(1)本發明的第一態樣，係關於由以Al2O3結晶粒子和化學式A3B5O12：Ce所表示的成分的結晶粒子(以下，也有記為A3B5O12：Ce結晶粒子的情形)作為主要成分的多結晶體的陶瓷燒結體所構成的光波長轉換構件者。
此光波長轉換構件，A3B5O12中的A和B係從下述元素群組所選出的至少一種元素，且前述Ce之元素分布在陶瓷燒結體的各結晶粒子內與結晶粒界的同時，分布在各結晶粒子內與結晶粒界的前述Ce之元素係結晶粒界的濃度比各結晶粒子內的濃度高。
A：Sc、Y、鑭系(不包括Ce)
B：Al、Ga
依此方式，本第一態樣的光波長轉換構件，因為分布在各結晶粒子內與結晶粒界的前述Ce之元素係結晶粒界的濃度比各結晶粒子內的濃度高，因此如由後述的實施例得知般，能夠實現高螢光強度和高色均質性(即顏色變異小)。
詳言之，在本第一態樣中，認為上述特定的元素係分布在結晶粒界比結晶粒子內多而成為元素的供應源，因此能夠減低伴隨燒成中的蒸發而來的濃度不均(也就是顏色變異)。又，此事可由燒成後的濃度的分布得知。
此外，藉由結晶粒界中有前述元素存在，緩和在結晶粒界等的不連續界面中產生的反射、折射(雙折射)，變得不太會造成因過度的粒界散射所產生的透光性的降低。因此，認為可得到高螢光強度。
此外，本第一態樣的光波長轉換構件，藉由上述的結構而具有高導熱性，因此即使是在將光源高輸出化的情況下，也能夠抑制因熱所產生的影響，例如能夠抑制光的消失。
另外，此光波長轉換構件係陶瓷燒結體，因此強度高，而且即使是在被光源重複照射光的情況下，性能也不太會劣化，再加上，有耐候性也優異這樣的優點。
(2)本發明的第二態樣中，A3B5O12：Ce所表示的成分的結晶粒子中的Ce濃度係相對於元素A為10.0mol%以下(但不包含0)。若A3B5O12：Ce結晶粒子中的Ce濃度係相對於元素A為0mol%，則變得難以得到充分的螢光強度。另一方面，若前述Ce濃度比10mol%多，則變得容易造成濃度消光，有導致螢光強度降低之虞。
因此，如同本第二態樣，在A3B5O12：Ce結晶中的Ce濃度係相對於元素A為10mol%以下(不包含0)的情況下，因為能夠實現高螢光強度而為合適的。
(3)本發明的第三態樣中，在陶瓷燒結體中所佔的A3B5O12：Ce所表示的成分的結晶粒子的比例為3~70vol%。此處，在A3B5O12：Ce結晶粒子小於3vol%的情況下，有因A3B5O12：Ce結晶粒子少，而變得難以得到充分的螢光強度之虞。另一方面，在A3B5O12：Ce結晶粒子比70vol%多的情況下，異種界面，即Al2O3結晶粒子和A3B5O12：Ce結晶粒子的界面的粒界散射增加，有變得難以得到充分的透光性(即螢光強度降低)之虞。
因此，如同第三態樣，在A3B5O12：Ce結晶粒子為3~70vol%的情況下，可得到充分的透光性的同 時，且發光強度變高而為合適的。(4)本發明的第四態樣係具備第一至三態樣中任一者的光波長轉換構件的發光裝置。
以本第四態樣的發光裝置(詳言之，為光波長轉換構件)轉換波長的光(即，螢光)具有高螢光強度和高色均質性。又，作為發光裝置的發光元件，能使用例如LED、LD等公知的元件。
<以下，針對本發明的各結構進行說明>
‧前述「光波長轉換構件」係具有上述結構的陶瓷燒結體，在各結晶粒子、其粒界中可以包含不可避免的雜質。
‧前述「主要成分」表示在前述光波長轉換構件中，存在最多的量(體積)。‧前述「A3B5O12：Ce」表示Ce固溶取代在A3B5O12中的A的一部分上，藉由具有這樣的構造，同化合物變得顯示螢光特性。
‧作為前述「濃度」，例如能夠採用表示mol%、重量%(wt%)、體積%(vol%)等含量的比例的各種指標。
1‧‧‧發光裝置
3‧‧‧容器
5‧‧‧發光元件
7‧‧‧開口部
9‧‧‧光波長轉換構件
圖1係顯示在厚度方向上將具備光波長轉換構件的發光裝置斷裂的剖面的剖面圖。
圖2(a)係No.3試料的BF-STEM影像，(b)係顯示基於對(a)的試料的線分析的濃度變化的曲線圖。
圖3(a)係No.8試料的BF-STEM影像，(b)係顯示基於對(a)的試料的線分析的濃度變化的曲線圖。
圖4(a)係No.18試料的BF-STEM影像，(b)係顯示基於對(a)的試料的線分析的濃度變化的曲線圖。
圖5(a)係No.20試料的BF-STEM影像，(b)係顯示基於對(a)的試料的線分析的濃度變化的曲線圖。
用以實施發明的形態
接著，針對本發明的光波長轉換構件及發光裝置的實施形態進行說明。
[1.實施形態] [1-1.發光裝置]
首先，針對具備光波長轉換構件的發光裝置進行說明。
如圖1所示，本實施形態的發光裝置1具備：例如氧化鋁等的箱狀的陶瓷製的封裝體(容器)3、配置在容器3的內部的例如LD等的發光元件5、和以覆蓋容器3的開口部7的方式所配置的板狀的光波長轉換構件9。
此發光裝置1，從發光元件5所放射的光透射具有透光性的光波長轉換構件9的同時，該光的一部分在光波長轉換構件9的內部被轉換波長而發光。即，光波長轉換構件9發出波長與從發光元件5所放射的光的波長不同的螢光。
例如，從LD所照射的藍色光，係藉由光波長轉換構件9轉換波長，從而使整體白色光從光波長轉換構件9照射至外部(例如，圖1的上方)。
[1-2.光波長轉換構件]
接著，針對光波長轉換構件9進行說明。
本實施形態的光波長轉換構件9，係藉由以Al2O3結晶粒子和化學式A3B5O12：Ce所表示的成分的結晶粒子(即A3B5O12：Ce結晶粒子)作為主要成分的多結晶體的陶瓷燒結體所構成者。
此光波長轉換構件9中，A3B5O12中的A和B係從下述元素群組所選出的至少一種元素。而且，前述Ce之元素分布在陶瓷燒結體的各結晶粒子內與結晶粒界的同時，分布在各結晶粒子內與結晶粒界的前述Ce之元素係結晶粒界的濃度比各結晶粒子內的濃度高。
A：Sc、Y、鑭系(不包括Ce)
B：Al、Ga
此外，本實施形態的光波長轉換構件9，能夠採用A3B5O12：Ce結晶粒子中的Ce濃度係相對於元素A為10.0mol%以下(但不包含0)。
另外，本實施形態的光波長轉換構件9，作為在陶瓷燒結體中所佔的A3B5O12：Ce結晶粒子的比例，能夠採用3~70vol%。
[1-3.效果]
接著，說明實施形態的效果。
本實施形態的光波長轉換構件9，分布在各結晶粒子內與結晶粒界的前述Ce之元素係結晶粒界的濃度比各結晶粒子內的濃度高，因此能夠實現高螢光強度和高色均質性(即顏色變異小)。
此外，本實施形態的光波長轉換構件9，因為具有高導熱性，因此即使是在將光源高輸出化的情況下，也能夠抑制因熱所產生的影響，例如能夠抑制光的消失。
另外，本實施形態的光波長轉換構件9係陶瓷燒結體，因此強度高，而且即使是在被光源重複照射光的情況下，性能也不太會劣化，再加上有耐候性也優異這樣的優點。
此外，在A3B5O12：Ce結晶粒子中的Ce濃度係相對於元素A為10mol%以下(不包含0)的情況下，因為能夠實現高螢光強度而為合適的。另外，在陶瓷燒結體中所佔的A3B5O12：Ce結晶粒子的比例為3~70vol%的情況時，有可得到充分的透光性的同時，且發光強度變高這樣的優點。
因此，具備前述光波長轉換構件9的發光裝置1發揮能夠產生具有高螢光強度和高色均質性的螢光這樣的效果。
[2.實施例]
接著，針對具體的各實施例進行說明。
[2-1.實施例1~3] <實施例1>
利用下述表1所示的條件，製作No.1~4的陶瓷燒結體的試料。又，各試料當中，No.1~3為本發明的範圍內的試料，No.4為本發明的範圍外(比較例)的試料。
具體而言，對各試料，以陶瓷燒結體(即構成光波長轉換構件的陶瓷燒結體)中的YAG(Y3Al5O12)的比例成為21vol%的方式，或者，以Ce濃度相對於YAG中的Y成為1mol%的方式，秤量Al2O3(平均粒徑0.3μm)和Y2O3(平均粒徑1.2μm)、CeO2(平均粒徑1.5μm)。
將其連同有機溶劑和既定量的分散劑(以固形物換算，相對於原料粉末為2wt%)投入球磨機中，進行12hr粉碎混合。前述混合粉碎係用以下的操作順序進行。
首先，用下述(1)~(4)中任一項的方法製作各粉末。
(1)僅用Al2O3進行10hr粉碎混合
(2)僅用Al2O3和CeO2進行10hr粉碎混合
(3)僅用Y2O3和CeO2進行10hr粉碎混合
(4)用Al2O3、Y2O3、CeO2進行10hr粉碎混合
然後，用下述條件將前述(1)~(4)的粉末進行混合、粉碎，製作A~D的各漿料。
A：混合(1)、(4)的粉末，進行2hr追加混合的漿料
B：混合(2)、(4)的粉末，進行2hr追加混合的漿料
C：混合(2)、(3)、(4)的粉末，進行2hr追加混合的漿料
D：將(4)的粉末進行2hr追加混合粉碎的漿料
接著，如下述表1所示，使用所得到的各漿料，利用刮刀法製作薄片成形體。將該薄片成形體脫脂後，在 大氣環境下，在燒成溫度1450℃~1750℃、保持時間3~20小時下進行燒成。藉此，得到No.1~4的陶瓷燒結體的試料。又，陶瓷燒結體的尺寸為20mm見方×厚度0.5mm。
又，作為分散劑，例如，能夠使用多元羧酸系分散劑的Sunnopco公司製的SN DISPERSANT5468、日本油脂股份公司製的Malialim AKM-0531。
接著，針對所得到的陶瓷燒結體，與後述的其他實施例同樣地，調查下述的特性(a)~(e)。將其結果記錄於下述表1。(a)相對密度：所得到的陶瓷燒結體的相對密度係用阿基米德法測定密度，將測定的密度換算為相對密度的方法而算出。
(b)結晶粒界成分：對各試料，使用集束離子束裝置(FIB裝置：Focused Ion Beam system)，從陶瓷燒結體的任意部分(例如，燒結體的中央部分)切出100nm四方形的薄片。觀察的對象設為該薄片的任意表面(例如薄片的中央部分)。
然後，用掃描透射型電子顯微鏡(STEM：Scanning Transmission Electron Microscope)觀察各試料的任意表面，確認結晶粒界。
然後，在確認了結晶粒界的各試料中，使用能量分散形X線分光器(EDS：Energy Dispersive X-ray Spectrometer)測定結晶粒子及結晶粒界的Ce元素的濃度，從而確認有無Ce元素。
詳言之，如後述的圖2~5所示，為了調查結晶粒子及結晶粒界的Ce元素的濃度，以包含結晶粒界和其兩側的結晶粒子的內部的方式，直線狀地設定既定範圍(即分析距離)，連續地測定該範圍的Ce元素的濃度(進行所謂的線分析)。
(c)螢光強度
對加工為13mm見方×厚度0.5mm的樣品，用透鏡使具有465nm波長的藍色LD光集光至寬度0.5mm以進行照射，利用透鏡使透射的光集光，由功率感測器(power sensor)測定其發光強度。此時，以所照射的功率密度成為40W/mm2的方式操作。又，該強度係以將YAG：Ce單結晶體的強度設為100時的相對值來評價。
(e)顏色變異
顏色變異係由利用色彩照度計的色度變異測定來評價。具體而言，對加工為20mm見方×厚度0.5mm的樣品，用透鏡使具有462nm波長的藍色LD光集光而作成寬度0.4mm，針對照射它並從相反面透射而來的光，藉由色彩照度計來測定色度。
照射係在樣品的照射面(樣品面)的中央設定18mm見方的區域，在該區域內以3mm間隔進行，評價其色度(X方向)的變異(△X)。此處，變異(△X)係指色度(X方向)的偏差的最大值。
然後，依上述方式操作按各試料所得到的結果當中，關於螢光強度、顏色變異，能夠依照如下的評價基準評價。又，其他實施例也能夠同樣地評價。
對於螢光強度，認為較佳為120以上。對於顏色變異，認為較佳為△X<0.015。以下，對於本實施例1，針對基於前述評價基準的評價等進行說明。
在實施例1的任一試料中，相對密度係99%以上而充分緻密化。此外，如表1所示，Ce元素係分布在結晶粒界比各結晶粒子多的No.1~3為螢光強度高且顏色變異小，皆成為良好的結果。另一方面，Ce的濃度差少的No.4係螢光強度低，顏色變異大。
又，在表1中，「Al2O3-Al2O3」表示Al2O3結晶粒子和Al2O3結晶粒子的粒界，「Al2O3-A3B5O12」表示Al2O3結晶粒子和A3B5O12：Ce結晶粒子的粒界，「A3B5O12-A3B5O12」表示A3B5O12：Ce結晶粒子和A3B5O12：Ce結晶粒子的粒界。此外，在各粒界中，「有」表示線分析的Ce濃度的最大波峰位於粒界，即結晶粒界的Ce濃度比各結晶粒子內的Ce濃度高。
<實施例2>
用與實施例1同樣的製造方法，如下述表1所示，製作陶瓷燒結體的試料(No.5~14的試料)，同樣地進行評價。
此處，以相對於陶瓷燒結體的A3B5O12(YAG)中的Y的Ce濃度成為0~15mol%的方式使原料掺合比改變。其結果，在任一試料中，相對密度皆為99%以上而充分緻密化。
此外，已知Ce元素係分布在結晶粒界比結晶粒子內多。於是，Ce濃度位於10mol%以下(但並非0) 的範圍的No.6~12係螢光強度、顏色變異成為良好的結果。
另一方面，不包含Ce的No.5無法測定螢光強度、顏色變異。
此外，Ce濃度高的No.13、14係螢光強度變低。
<實施例3>
用與實施例1同樣的製造方法，如下述表1所示，製作陶瓷燒結體的試料(No.15~22的試料)，同樣地進行評價。
但是，以陶瓷燒結體中的A3B5O12：Ce量(YAG：Ce量)成為1~80vol%的方式使原料掺合比改變。其結果，在任一試料中，相對密度皆為99%以上而充分緻密化。
此外，已知Ce元素係分布在結晶粒界比結晶粒子內多。於是，YAG：Ce量位於1~70vol%的範圍的No.16~21係螢光強度、顏色變異皆成為良好的結果。
另一方面，YAG：Ce量少的No.15、YAG：Ce量多的No.22係螢光強度變低，顏色變異變得稍大。
<實施例4>使用與實施例1同樣的製造方法，如下述表1所示，製作陶瓷燒結體的試料(No.23~43的試料)，同樣地進行評價。
但是，在調合時不僅使用Y2O3粉末，還使用一個以上的Lu2O3(平均粒徑1.3μm)或Yb2O3(平均粒徑1.5μm)、Gd2O3(平均粒徑1.5μm)、Tb2O3(平均粒徑1.6μm)、Ga2O3(平均粒徑1.3μm)的各粉末，以能夠合成既定的A3B5O12：Ce的方式使掺合比改變。
其結果，在任一試料中，相對密度皆為99%以上而充分緻密化。此外，已知Ce元素係分布在結晶粒界比結晶粒子內多。
於是，在全部的試料中，螢光強度、顏色變異皆成為良好的結果。
Figure 106137045-A0202-12-0015-1
[2-2.線分析]
此處，針對上述的線分析及其結果進行說明。
圖2(a)係No.3試料的BF-STEM影像(倍率20萬倍)。此處，如圖2(a)所示，對橫跨「YAG(即YAG結晶粒子)-結晶粒界-Al2O3(即Al2O3結晶粒子)」的範圍的橫線的範圍進行前述線分析。
將其結果顯示在圖2(b)，知道了與兩側的結晶粒子內相比，在結晶粒界中Ce濃度成為最大。又，圖2(b)的曲線圖的橫軸，係設為橫切圖2(a)所示的結晶粒界的直線上的位置，顯示從YAG(即YAG結晶粒子)的位置A1起，經過結晶粒界上的位置A2，至Al2O3(即Al2O3結晶粒子)的位置A3的各位置。從位置A1至位置A3的距離為約100nm。另一方面，縱軸顯示Ce的濃度。以下，對於其他的線分析，相異點在於不使用「A1、A2、A3」，而使用「B1、B2、B3」、「C1、C2、C3」、「D1、D2、D3」的記號作為線分析的範圍，其他是相同的。
圖3(a)係No.8試料的BF-STEM影像(倍率20萬倍)。此處，如圖3(a)所示，對橫跨「Al2O3-結晶粒界-Al2O3」的範圍的橫線的範圍(B1~B2~B3)進行前述線分析。
將其結果顯示在圖3(b)，知道了與兩側的結晶粒子內相比，在結晶粒界中Ce濃度成為最大。又，圖4(a)係No.18試料的BF-STEM影像(倍率20萬倍)。此處，如圖4(a)所示，對橫跨「YAG-結晶粒界-Al2O3」的範圍的橫線的範圍(C1~C2~C3)進行前述線分析。
將其結果顯示在圖4(b)，知道了與兩側的結晶粒子內相比，在結晶粒界中Ce濃度成為最大。圖5(a)係No.20試料的BF-STEM影像(倍率20萬倍)。此處，如圖5(a)所示，對橫跨「YAG-結晶粒界-YAG」的範圍的橫線的範圍(D1~D2~D3)進行前述線分析。
將其結果顯示在圖5(b)，知道了與兩側的結晶粒子內相比，在結晶粒界中Ce濃度成為最大。
[3.其他的實施形態]
本發明完全不受前述實施形態限定，也不需闡明在不脫離本發明的範圍內能夠以各種態樣實施。
(1)例如，在前述實施例中，使用大氣中的常壓燒成法作為燒成方法，但除此之外，也能夠藉由真空氣體環境燒成法、還原氣體環境燒成法、熱壓(HP)法、熱等向壓加壓(HIP)法或組合它們的燒成方法來製作具有同等性能的樣品。
(2)作為前述光波長轉換構件、發光裝置的用途，可舉出：螢光體、光波長轉換機器、頭燈、照明、投影機等光學機器等各種用途。
(3)能夠適宜組合前述實施形態的結構。
1‧‧‧發光裝置
3‧‧‧容器
5‧‧‧發光元件
7‧‧‧開口部
9‧‧‧光波長轉換構件

Claims (6)

  1. 一種光波長轉換構件，其係由以Al2O3結晶粒子和化學式A3B5O12：Ce所表示的成分的結晶粒子作為主要成分的多結晶體的陶瓷燒結體所構成的光波長轉換構件，其特徵為：該A3B5O12中的A和B係從下述元素群組所選出的至少一種元素，A：Sc、Y、鑭系(不包括Ce)B：Al、Ga且該Ce之元素分布在該陶瓷燒結體的該各結晶粒子內與結晶粒界的同時，分布在該各結晶粒子內與該結晶粒界的該Ce之元素係該結晶粒界的濃度比該各結晶粒子內的濃度高。
  2. 如請求項1的光波長轉換構件，其中該各結晶粒子內的濃度和該結晶粒界的濃度，係在以包含該結晶粒界和其兩側的結晶粒子的內部的方式，直線狀地設定既定範圍設定，連續地測定的情況下所得到的濃度。
  3. 如請求項1的光波長轉換構件，其中該A3B5O12：Ce所表示的成分的結晶粒子中的Ce濃度係相對於該元素A為10.0mol%以下(但不包含0)。
  4. 如請求項2的光波長轉換構件，其中該A3B5O12：Ce所表示的成分的結晶粒子中的Ce濃度係相對於該元素A為10.0mol%以下(但不包含0)。
  5. 如請求項1至4中任一項的光波長轉換構件，其中在該陶瓷燒結體中所佔的該A3B5O12：Ce所表示的成分的結晶粒子的比例為3~70vol%。
  6. 一種發光裝置，其特徵為具備如該請求項1至5中任一項的光波長轉換構件。
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Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
CN112384832B (zh) 2018-07-11 2022-05-03 日本特殊陶业株式会社 光波长转换构件和发光装置
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060250069A1 (en) * 2004-06-24 2006-11-09 Sakata Shin-Ichi White light light emitting diode device
TW201123552A (en) * 2009-11-23 2011-07-01 Koninkl Philips Electronics Nv Wavelength converted semiconductor light emitting device
US20130088143A1 (en) * 2010-03-31 2013-04-11 Ube Industries, Ltd. Ceramic composite for light conversion, process for production thereof, and light-emitting devices provided with same
US20130161849A1 (en) * 2011-12-22 2013-06-27 Shin-Etsu Chemical Co., Ltd. Preparation of yttrium-cerium-aluminum garnet phosphor

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS469319Y1 (zh) 1966-08-12 1971-04-02
JPS54143100A (en) 1978-04-28 1979-11-07 Mitsubishi Heavy Ind Ltd Labeling machine
KR100683364B1 (ko) * 1999-09-27 2007-02-15 필립스 루미리즈 라이팅 캄파니 엘엘씨 완전한 형광 물질 변환에 의해 백색광을 생성하는 발광다이오드 소자
DE10020465A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit Lumineszenzkonversionselement
CN1738781A (zh) * 2003-01-20 2006-02-22 宇部兴产株式会社 用于光转化的陶瓷复合材料及其应用
JP4679366B2 (ja) * 2003-07-29 2011-04-27 京セラ株式会社 Ｙ２ｏ３質焼結体、耐食性部材およびその製造方法並びに半導体・液晶製造装置用部材
KR100885694B1 (ko) 2004-12-17 2009-02-26 우베 고산 가부시키가이샤 광변환 구조체 및 그것을 이용한 발광장치
CN100566490C (zh) * 2005-03-14 2009-12-02 皇家飞利浦电子股份有限公司 多晶陶瓷结构中的磷光体和包括该磷光体的发光元件
WO2006097876A1 (en) * 2005-03-14 2006-09-21 Koninklijke Philips Electronics N.V. Phosphor in polycrystalline ceramic structure and a light-emitting element comprising same
CN101953230B (zh) * 2008-02-21 2013-03-27 日东电工株式会社 具有半透明陶瓷板的发光装置
JP5650885B2 (ja) 2008-12-27 2015-01-07 日亜化学工業株式会社 波長変換焼結体及びこれを用いた発光装置、並びに波長変換焼結体の製造方法
KR101013146B1 (ko) * 2010-02-16 2011-02-10 충남대학교산학협력단 이트륨 알루미늄 가넷 황색-발광 형광체의 급속 고상 합성방법
JP5088977B2 (ja) 2010-08-18 2012-12-05 コバレントマテリアル株式会社 セラミックス複合体
JP2013203762A (ja) * 2012-03-27 2013-10-07 Shin-Etsu Chemical Co Ltd 波長変換部品及びその製造方法並びに発光装置
KR101660618B1 (ko) * 2012-03-29 2016-09-27 우베 고산 가부시키가이샤 산질화물 형광체 분말
JP5740017B2 (ja) 2012-03-30 2015-06-24 コバレントマテリアル株式会社 セラミックス複合体
JP2013227481A (ja) 2012-03-30 2013-11-07 Covalent Materials Corp セラミックス複合体
JP5919961B2 (ja) * 2012-03-30 2016-05-18 宇部興産株式会社 セラミック複合体の製造方法
KR101661831B1 (ko) 2013-08-08 2016-09-30 니뽄 도쿠슈 도교 가부시키가이샤 세라믹 조성물 및 절삭 공구
JP6430123B2 (ja) * 2014-02-06 2018-11-28 スタンレー電気株式会社 波長変換体及びそれを用いた発光装置
US20170088774A1 (en) * 2014-03-18 2017-03-30 Ube Industries, Ltd. Ceramic Composite Material for Optical Conversion, Production Method Therefor, and Light-Emitting Device Provided with Same
WO2016117623A1 (ja) * 2015-01-21 2016-07-28 三菱化学株式会社 焼結蛍光体、発光装置、照明装置、車両前照灯、及び焼結蛍光体の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060250069A1 (en) * 2004-06-24 2006-11-09 Sakata Shin-Ichi White light light emitting diode device
TW201123552A (en) * 2009-11-23 2011-07-01 Koninkl Philips Electronics Nv Wavelength converted semiconductor light emitting device
US20130088143A1 (en) * 2010-03-31 2013-04-11 Ube Industries, Ltd. Ceramic composite for light conversion, process for production thereof, and light-emitting devices provided with same
US20130161849A1 (en) * 2011-12-22 2013-06-27 Shin-Etsu Chemical Co., Ltd. Preparation of yttrium-cerium-aluminum garnet phosphor

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