TWI678388B - 半導體基板洗淨用組成物 - Google Patents
半導體基板洗淨用組成物 Download PDFInfo
- Publication number
- TWI678388B TWI678388B TW104124383A TW104124383A TWI678388B TW I678388 B TWI678388 B TW I678388B TW 104124383 A TW104124383 A TW 104124383A TW 104124383 A TW104124383 A TW 104124383A TW I678388 B TWI678388 B TW I678388B
- Authority
- TW
- Taiwan
- Prior art keywords
- acid
- mass
- film
- substrate
- group
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 102
- 238000004140 cleaning Methods 0.000 title claims abstract description 73
- 239000000203 mixture Substances 0.000 title claims abstract description 64
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 229920000642 polymer Polymers 0.000 claims abstract description 48
- 150000007524 organic acids Chemical class 0.000 claims abstract description 40
- 239000002904 solvent Substances 0.000 claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000002253 acid Substances 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 17
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000007787 solid Substances 0.000 claims abstract description 10
- 238000010494 dissociation reaction Methods 0.000 claims abstract description 9
- 230000005593 dissociations Effects 0.000 claims abstract description 9
- 235000005985 organic acids Nutrition 0.000 claims abstract description 8
- 150000007513 acids Chemical class 0.000 claims description 6
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 claims 2
- 239000002245 particle Substances 0.000 abstract description 41
- 238000000034 method Methods 0.000 abstract description 21
- 230000008569 process Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 2
- -1 cyclooctane Cyclic ketone Chemical class 0.000 description 53
- 239000010408 film Substances 0.000 description 53
- 125000004432 carbon atom Chemical group C* 0.000 description 28
- 150000002430 hydrocarbons Chemical class 0.000 description 26
- 239000007788 liquid Substances 0.000 description 20
- 239000000243 solution Substances 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 18
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 239000003759 ester based solvent Substances 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 7
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 7
- 239000004210 ether based solvent Substances 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 125000005842 heteroatom Chemical group 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 125000002723 alicyclic group Chemical group 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 6
- 239000005453 ketone based solvent Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 125000000962 organic group Chemical group 0.000 description 6
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 6
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 4
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 4
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 4
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 4
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 4
- 125000005194 alkoxycarbonyloxy group Chemical group 0.000 description 4
- 125000004448 alkyl carbonyl group Chemical group 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 150000002763 monocarboxylic acids Chemical class 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- ODLMAHJVESYWTB-UHFFFAOYSA-N propylbenzene Chemical compound CCCC1=CC=CC=C1 ODLMAHJVESYWTB-UHFFFAOYSA-N 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 3
- RGSFGYAAUTVSQA-UHFFFAOYSA-N Cyclopentane Chemical compound C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 3
- AQZGPSLYZOOYQP-UHFFFAOYSA-N Diisoamyl ether Chemical compound CC(C)CCOCCC(C)C AQZGPSLYZOOYQP-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 3
- 239000005456 alcohol based solvent Substances 0.000 description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 3
- 150000001409 amidines Chemical class 0.000 description 3
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 235000015165 citric acid Nutrition 0.000 description 3
- 238000010835 comparative analysis Methods 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- AFABGHUZZDYHJO-UHFFFAOYSA-N dimethyl butane Natural products CCCC(C)C AFABGHUZZDYHJO-UHFFFAOYSA-N 0.000 description 3
- 229940116333 ethyl lactate Drugs 0.000 description 3
- XPFVYQJUAUNWIW-UHFFFAOYSA-N furfuryl alcohol Chemical compound OCC1=CC=CO1 XPFVYQJUAUNWIW-UHFFFAOYSA-N 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 3
- 239000001630 malic acid Substances 0.000 description 3
- 235000011090 malic acid Nutrition 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 235000006408 oxalic acid Nutrition 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 235000002906 tartaric acid Nutrition 0.000 description 3
- 239000011975 tartaric acid Substances 0.000 description 3
- FYGHSUNMUKGBRK-UHFFFAOYSA-N 1,2,3-trimethylbenzene Chemical compound CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 description 2
- KVNYFPKFSJIPBJ-UHFFFAOYSA-N 1,2-diethylbenzene Chemical compound CCC1=CC=CC=C1CC KVNYFPKFSJIPBJ-UHFFFAOYSA-N 0.000 description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 2
- QPUYECUOLPXSFR-UHFFFAOYSA-N 1-methylnaphthalene Chemical compound C1=CC=C2C(C)=CC=CC2=C1 QPUYECUOLPXSFR-UHFFFAOYSA-N 0.000 description 2
- YJCJVMMDTBEITC-UHFFFAOYSA-N 10-hydroxycapric acid Chemical compound OCCCCCCCCCC(O)=O YJCJVMMDTBEITC-UHFFFAOYSA-N 0.000 description 2
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 2
- GXDHCNNESPLIKD-UHFFFAOYSA-N 2-methylhexane Natural products CCCCC(C)C GXDHCNNESPLIKD-UHFFFAOYSA-N 0.000 description 2
- ZEYHEAKUIGZSGI-UHFFFAOYSA-N 4-methoxybenzoic acid Chemical compound COC1=CC=C(C(O)=O)C=C1 ZEYHEAKUIGZSGI-UHFFFAOYSA-N 0.000 description 2
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- NHTMVDHEPJAVLT-UHFFFAOYSA-N Isooctane Chemical compound CC(C)CC(C)(C)C NHTMVDHEPJAVLT-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 125000001931 aliphatic group Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 2
- KDKYADYSIPSCCQ-UHFFFAOYSA-N but-1-yne Chemical compound CCC#C KDKYADYSIPSCCQ-UHFFFAOYSA-N 0.000 description 2
- 229930188620 butyrolactone Natural products 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- LJOODBDWMQKMFB-UHFFFAOYSA-N cyclohexylacetic acid Chemical compound OC(=O)CC1CCCCC1 LJOODBDWMQKMFB-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- LPIQUOYDBNQMRZ-UHFFFAOYSA-N cyclopentene Chemical compound C1CC=CC1 LPIQUOYDBNQMRZ-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 150000001983 dialkylethers Chemical class 0.000 description 2
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001530 fumaric acid Substances 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002334 glycols Chemical class 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 229920001903 high density polyethylene Polymers 0.000 description 2
- 239000004700 high-density polyethylene Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- ROBFUDYVXSDBQM-UHFFFAOYSA-N hydroxymalonic acid Chemical compound OC(=O)C(O)C(O)=O ROBFUDYVXSDBQM-UHFFFAOYSA-N 0.000 description 2
- QWTDNUCVQCZILF-UHFFFAOYSA-N isopentane Chemical compound CCC(C)C QWTDNUCVQCZILF-UHFFFAOYSA-N 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- GVWISOJSERXQBM-UHFFFAOYSA-N n-methylpropan-1-amine Chemical compound CCCNC GVWISOJSERXQBM-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- WLJVXDMOQOGPHL-UHFFFAOYSA-N phenylacetic acid Chemical compound OC(=O)CC1=CC=CC=C1 WLJVXDMOQOGPHL-UHFFFAOYSA-N 0.000 description 2
- 239000004584 polyacrylic acid Substances 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- 238000004448 titration Methods 0.000 description 2
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 2
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- GGAUUQHSCNMCAU-ZXZARUISSA-N (2s,3r)-butane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C[C@H](C(O)=O)[C@H](C(O)=O)CC(O)=O GGAUUQHSCNMCAU-ZXZARUISSA-N 0.000 description 1
- RBNPOMFGQQGHHO-UHFFFAOYSA-N -2,3-Dihydroxypropanoic acid Natural products OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M .beta-Phenylacrylic acid Natural products [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- CEGRHPCDLKAHJD-UHFFFAOYSA-N 1,1,1-propanetricarboxylic acid Chemical compound CCC(C(O)=O)(C(O)=O)C(O)=O CEGRHPCDLKAHJD-UHFFFAOYSA-N 0.000 description 1
- VIDOPANCAUPXNH-UHFFFAOYSA-N 1,2,3-triethylbenzene Chemical compound CCC1=CC=CC(CC)=C1CC VIDOPANCAUPXNH-UHFFFAOYSA-N 0.000 description 1
- OKIRBHVFJGXOIS-UHFFFAOYSA-N 1,2-di(propan-2-yl)benzene Chemical compound CC(C)C1=CC=CC=C1C(C)C OKIRBHVFJGXOIS-UHFFFAOYSA-N 0.000 description 1
- YJUUZFWMKJBVFJ-UHFFFAOYSA-N 1,3-dimethylimidazolidin-4-one Chemical compound CN1CN(C)C(=O)C1 YJUUZFWMKJBVFJ-UHFFFAOYSA-N 0.000 description 1
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- CMCBDXRRFKYBDG-UHFFFAOYSA-N 1-dodecoxydodecane Chemical compound CCCCCCCCCCCCOCCCCCCCCCCCC CMCBDXRRFKYBDG-UHFFFAOYSA-N 0.000 description 1
- DGLWHXRTXWIDEE-UHFFFAOYSA-N 1-ethoxyoctadecane Chemical compound CCCCCCCCCCCCCCCCCCOCC DGLWHXRTXWIDEE-UHFFFAOYSA-N 0.000 description 1
- HYFLWBNQFMXCPA-UHFFFAOYSA-N 1-ethyl-2-methylbenzene Chemical compound CCC1=CC=CC=C1C HYFLWBNQFMXCPA-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- FDHDUXOBMHHFFJ-UHFFFAOYSA-N 1-pentylnaphthalene Chemical compound C1=CC=C2C(CCCCC)=CC=CC2=C1 FDHDUXOBMHHFFJ-UHFFFAOYSA-N 0.000 description 1
- LRMSQVBRUNSOJL-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanoic acid Chemical compound OC(=O)C(F)(F)C(F)(F)F LRMSQVBRUNSOJL-UHFFFAOYSA-N 0.000 description 1
- CCUWGJDGLACFQT-UHFFFAOYSA-N 2,2,3,3,4,4-hexafluoropentanedioic acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)C(O)=O CCUWGJDGLACFQT-UHFFFAOYSA-N 0.000 description 1
- SRWQZLPAWBOLJD-UHFFFAOYSA-N 2,2-difluoro-2-(2,3,4,5,6-pentafluorophenyl)acetic acid Chemical compound OC(=O)C(F)(F)c1c(F)c(F)c(F)c(F)c1F SRWQZLPAWBOLJD-UHFFFAOYSA-N 0.000 description 1
- LIHVFFFGWFBSAT-UHFFFAOYSA-N 2,2-difluoropropanedioic acid Chemical compound OC(=O)C(F)(F)C(O)=O LIHVFFFGWFBSAT-UHFFFAOYSA-N 0.000 description 1
- JLZVIWSFUPLSOR-UHFFFAOYSA-N 2,3-difluorobenzoic acid Chemical compound OC(=O)C1=CC=CC(F)=C1F JLZVIWSFUPLSOR-UHFFFAOYSA-N 0.000 description 1
- PQHQBRJAAZQXHL-GQCOAOBCSA-N 2-(4-iodanyl-2,5-dimethoxyphenyl)ethanamine Chemical compound COC1=CC(CCN)=C(OC)C=C1[125I] PQHQBRJAAZQXHL-GQCOAOBCSA-N 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- ZVUNTIMPQCQCAQ-UHFFFAOYSA-N 2-dodecanoyloxyethyl dodecanoate Chemical compound CCCCCCCCCCCC(=O)OCCOC(=O)CCCCCCCCCCC ZVUNTIMPQCQCAQ-UHFFFAOYSA-N 0.000 description 1
- SMNDYUVBFMFKNZ-UHFFFAOYSA-N 2-furoic acid Chemical compound OC(=O)C1=CC=CO1 SMNDYUVBFMFKNZ-UHFFFAOYSA-N 0.000 description 1
- JYJIMEQNTHFXMT-UHFFFAOYSA-N 2-nitro-2-phenylacetic acid Chemical compound OC(=O)C([N+]([O-])=O)C1=CC=CC=C1 JYJIMEQNTHFXMT-UHFFFAOYSA-N 0.000 description 1
- ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 2-octanone Chemical compound CCCCCCC(C)=O ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 0.000 description 1
- WMRCTEPOPAZMMN-UHFFFAOYSA-N 2-undecylpropanedioic acid Chemical compound CCCCCCCCCCCC(C(O)=O)C(O)=O WMRCTEPOPAZMMN-UHFFFAOYSA-N 0.000 description 1
- BRRVXFOKWJKTGG-UHFFFAOYSA-N 3,3,5-trimethylcyclohexanol Chemical compound CC1CC(O)CC(C)(C)C1 BRRVXFOKWJKTGG-UHFFFAOYSA-N 0.000 description 1
- YJLVXRPNNDKMMO-UHFFFAOYSA-N 3,4,5,6-tetrafluorophthalic acid Chemical compound OC(=O)C1=C(F)C(F)=C(F)C(F)=C1C(O)=O YJLVXRPNNDKMMO-UHFFFAOYSA-N 0.000 description 1
- PKNKULBDCRZSBT-UHFFFAOYSA-N 3,4,5-trimethylnonan-2-one Chemical compound CCCCC(C)C(C)C(C)C(C)=O PKNKULBDCRZSBT-UHFFFAOYSA-N 0.000 description 1
- VYWYYJYRVSBHJQ-UHFFFAOYSA-N 3,5-dinitrobenzoic acid Chemical compound OC(=O)C1=CC([N+]([O-])=O)=CC([N+]([O-])=O)=C1 VYWYYJYRVSBHJQ-UHFFFAOYSA-N 0.000 description 1
- KAWNRNMMEKTYGM-UHFFFAOYSA-N 3-methoxycyclohexane-1-carboxylic acid Chemical compound COC1CCCC(C(O)=O)C1 KAWNRNMMEKTYGM-UHFFFAOYSA-N 0.000 description 1
- VGVHNLRUAMRIEW-UHFFFAOYSA-N 4-methylcyclohexan-1-one Chemical compound CC1CCC(=O)CC1 VGVHNLRUAMRIEW-UHFFFAOYSA-N 0.000 description 1
- MGTZCLMLSSAXLD-UHFFFAOYSA-N 5-oxohexanoic acid Chemical compound CC(=O)CCCC(O)=O MGTZCLMLSSAXLD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- HDBJEPNPBKYGFH-UHFFFAOYSA-E C(CCC)S(=O)(=O)[O-].C(CCC)S(=O)(=O)[O-].C(CCC)S(=O)(=O)[O-].C(CCC)S(=O)(=O)[O-].C(CCC)S(=O)(=O)[O-].C(CCC)S(=O)(=O)[O-].C(CCC)S(=O)(=O)[O-].C(CCC)S(=O)(=O)[O-].C(CCC)S(=O)(=O)[O-].C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1 Chemical compound C(CCC)S(=O)(=O)[O-].C(CCC)S(=O)(=O)[O-].C(CCC)S(=O)(=O)[O-].C(CCC)S(=O)(=O)[O-].C(CCC)S(=O)(=O)[O-].C(CCC)S(=O)(=O)[O-].C(CCC)S(=O)(=O)[O-].C(CCC)S(=O)(=O)[O-].C(CCC)S(=O)(=O)[O-].C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1.C1(=CC=CC=C1)[S+](C1=CC=CC=C1)C1=CC=CC=C1 HDBJEPNPBKYGFH-UHFFFAOYSA-E 0.000 description 1
- YRCKLNOJODHXBA-UHFFFAOYSA-N C(O)(O)=O.C(=O)(O)OC(=O)O.C(O)(O)=O Chemical compound C(O)(O)=O.C(=O)(O)OC(=O)O.C(O)(O)=O YRCKLNOJODHXBA-UHFFFAOYSA-N 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N Caprylic acid Natural products CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- WBYWAXJHAXSJNI-SREVYHEPSA-N Cinnamic acid Chemical compound OC(=O)\C=C/C1=CC=CC=C1 WBYWAXJHAXSJNI-SREVYHEPSA-N 0.000 description 1
- 241000723346 Cinnamomum camphora Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 1
- YYLLIJHXUHJATK-UHFFFAOYSA-N Cyclohexyl acetate Chemical compound CC(=O)OC1CCCCC1 YYLLIJHXUHJATK-UHFFFAOYSA-N 0.000 description 1
- LVZWSLJZHVFIQJ-UHFFFAOYSA-N Cyclopropane Chemical compound C1CC1 LVZWSLJZHVFIQJ-UHFFFAOYSA-N 0.000 description 1
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 description 1
- QEVGZEDELICMKH-UHFFFAOYSA-N Diglycolic acid Chemical compound OC(=O)COCC(O)=O QEVGZEDELICMKH-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- FPVVYTCTZKCSOJ-UHFFFAOYSA-N Ethylene glycol distearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCOC(=O)CCCCCCCCCCCCCCCCC FPVVYTCTZKCSOJ-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 150000000475 acetylene derivatives Chemical class 0.000 description 1
- JIMXXGFJRDUSRO-UHFFFAOYSA-N adamantane-1-carboxylic acid Chemical compound C1C(C2)CC3CC2CC1(C(=O)O)C3 JIMXXGFJRDUSRO-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- GONOPSZTUGRENK-UHFFFAOYSA-N benzyl(trichloro)silane Chemical compound Cl[Si](Cl)(Cl)CC1=CC=CC=C1 GONOPSZTUGRENK-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 229960000846 camphor Drugs 0.000 description 1
- 229930008380 camphor Natural products 0.000 description 1
- 239000003660 carbonate based solvent Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 235000013985 cinnamic acid Nutrition 0.000 description 1
- 229930016911 cinnamic acid Natural products 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 150000003997 cyclic ketones Chemical class 0.000 description 1
- 150000001924 cycloalkanes Chemical class 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- CGZZMOTZOONQIA-UHFFFAOYSA-N cycloheptanone Chemical compound O=C1CCCCCC1 CGZZMOTZOONQIA-UHFFFAOYSA-N 0.000 description 1
- WLWKIJKUDWYINL-UHFFFAOYSA-N cyclohexane-1,1,2,2,3,3-hexacarboxylic acid Chemical compound OC(=O)C1(C(O)=O)CCCC(C(O)=O)(C(O)=O)C1(C(O)=O)C(O)=O WLWKIJKUDWYINL-UHFFFAOYSA-N 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- 239000004914 cyclooctane Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- WYACBZDAHNBPPB-UHFFFAOYSA-N diethyl oxalate Chemical compound CCOC(=O)C(=O)OCC WYACBZDAHNBPPB-UHFFFAOYSA-N 0.000 description 1
- PBWZKZYHONABLN-UHFFFAOYSA-N difluoroacetic acid Chemical compound OC(=O)C(F)F PBWZKZYHONABLN-UHFFFAOYSA-N 0.000 description 1
- 125000001028 difluoromethyl group Chemical group [H]C(F)(F)* 0.000 description 1
- JVSWJIKNEAIKJW-UHFFFAOYSA-N dimethyl-hexane Natural products CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000032050 esterification Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- FPIQZBQZKBKLEI-UHFFFAOYSA-N ethyl 1-[[2-chloroethyl(nitroso)carbamoyl]amino]cyclohexane-1-carboxylate Chemical compound ClCCN(N=O)C(=O)NC1(C(=O)OCC)CCCCC1 FPIQZBQZKBKLEI-UHFFFAOYSA-N 0.000 description 1
- IJUHLFUALMUWOM-UHFFFAOYSA-N ethyl 3-methoxypropanoate Chemical compound CCOC(=O)CCOC IJUHLFUALMUWOM-UHFFFAOYSA-N 0.000 description 1
- 125000004494 ethyl ester group Chemical group 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 125000004216 fluoromethyl group Chemical group [H]C([H])(F)* 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 229940100608 glycol distearate Drugs 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- DMEGYFMYUHOHGS-UHFFFAOYSA-N heptamethylene Natural products C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 description 1
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical group CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- KXUHSQYYJYAXGZ-UHFFFAOYSA-N isobutylbenzene Chemical compound CC(C)CC1=CC=CC=C1 KXUHSQYYJYAXGZ-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 1
- WBYWAXJHAXSJNI-UHFFFAOYSA-N methyl p-hydroxycinnamate Natural products OC(=O)C=CC1=CC=CC=C1 WBYWAXJHAXSJNI-UHFFFAOYSA-N 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
- PYLWMHQQBFSUBP-UHFFFAOYSA-N monofluorobenzene Chemical compound FC1=CC=CC=C1 PYLWMHQQBFSUBP-UHFFFAOYSA-N 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- ABMFBCRYHDZLRD-UHFFFAOYSA-N naphthalene-1,4-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1 ABMFBCRYHDZLRD-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- WSGCRAOTEDLMFQ-UHFFFAOYSA-N nonan-5-one Chemical compound CCCCC(=O)CCCC WSGCRAOTEDLMFQ-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- GSGDTSDELPUTKU-UHFFFAOYSA-N nonoxybenzene Chemical compound CCCCCCCCCOC1=CC=CC=C1 GSGDTSDELPUTKU-UHFFFAOYSA-N 0.000 description 1
- UMRZSTCPUPJPOJ-KNVOCYPGSA-N norbornane Chemical compound C1C[C@H]2CC[C@@H]1C2 UMRZSTCPUPJPOJ-KNVOCYPGSA-N 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 125000000538 pentafluorophenyl group Chemical group FC1=C(F)C(F)=C(*)C(F)=C1F 0.000 description 1
- YPJUNDFVDDCYIH-UHFFFAOYSA-N perfluorobutyric acid Chemical compound OC(=O)C(F)(F)C(F)(F)C(F)(F)F YPJUNDFVDDCYIH-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 239000003279 phenylacetic acid Substances 0.000 description 1
- 229960003424 phenylacetic acid Drugs 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- YGSFNCRAZOCNDJ-UHFFFAOYSA-N propan-2-one Chemical compound CC(C)=O.CC(C)=O YGSFNCRAZOCNDJ-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical compound CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000000565 sulfonamide group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 125000004205 trifluoroethyl group Chemical group [H]C([H])(*)C(F)(F)F 0.000 description 1
- 125000004360 trifluorophenyl group Chemical group 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0014—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by incorporation in a layer which is removed with the contaminants
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F120/00—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F120/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F120/10—Esters
- C08F120/12—Esters of monohydric alcohols or phenols
- C08F120/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F120/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F120/00—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F120/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F120/10—Esters
- C08F120/22—Esters containing halogen
- C08F120/24—Esters containing halogen containing perhaloalkyl radicals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F120/00—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F120/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F120/10—Esters
- C08F120/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F120/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F132/00—Homopolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
- C08F132/08—Homopolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
- C08K5/092—Polycarboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2086—Hydroxy carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/24—Organic compounds containing halogen
- C11D3/245—Organic compounds containing halogen containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/373—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds containing silicones
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/40—Specific cleaning or washing processes
- C11D2111/42—Application of foam or a temporary coating on the surface to be cleaned
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Emergency Medicine (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
本發明提供一種半導體基板洗淨用組成物,其係在於半導體基板表面形成膜並去除基板表面之異物之製程中,可效率良好地去除基板表面之顆粒,且可自基板表面容易地去除所形成之膜。
本發明係一種半導體基板洗淨用組成物,其含有溶劑與含氟原子、矽原子或該等之組合之聚合物。上述溶劑中之水之含量較好為20質量%以下。亦可進一步含有非聚合物之有機酸。上述有機酸較好為多元羧酸。上述聚合物之酸解離常數宜小於上述有機酸之酸解離常數。上述有機酸對於25℃之水之溶解度較好為5質量%以上。上述有機酸在25℃宜為固體。
Description
本發明係有關半導體基板洗淨用組成物。
於半導體基板之製造步驟中,為了去除已形成圖案之基板表面所附著之顆粒等之污染物質而進行洗淨。近幾年來,所形成之圖案進展為微細化、高長寬比化。使用液體或氣體之洗淨中,由於液體或氣體難以在基板表面附近或圖案之間流,故難以去除微小顆粒或附著於上述圖案間之顆粒。
於日本特開平7-74137號公報中,揭示於基板表面供給塗佈液形成薄膜後,藉由以黏著膠帶等剝離而去除基板表面之顆粒的方法。依據該方法,認為可減低對半導體基板之影響,且可以高的去除率去除微小顆粒或圖案間之顆粒。然而,以該方法則存在必須自基板表面物理性剝下薄膜,步驟繁雜,且於薄膜之一部分殘留於圖案內時難以去除之問題。
於日本特開2014-99583號公報中,揭示對基板表面供給用以形成膜之處理液,使之固化或硬化後,藉
由去除液將固化或硬化之處理液完全溶解,藉此將基板表面之顆粒去除所用之基板洗淨裝置及基板洗淨方法。於發明之詳細說明中作為處理液之非限定例,記載有保護塗覆液(top coat),但關於何種處理液適用則未有詳細記載。
[專利文獻1]日本特開平7-74137號公報
[專利文獻2]日本特開2014-99583號公報
本發明係基於如上述情況而完成者。亦即,本發明之目的在於提供一種半導體基板洗淨用組成物,其係在於半導體基板表面形成膜並去除基板表面之異物之製程中,可效率良好地去除基板表面之顆粒,且可自基板表面容易地去除所形成之膜。
用以解決上述課題之發明係含有溶劑(以下亦稱為「[A]溶劑」)與含氟原子、矽原子或該等之組合的聚合物(以下亦稱為「[B]聚合物」)之半導體基板洗淨用組成物。
依據本發明,可提供一種半導體基板洗淨用組成物,其係在於基板表面形成膜並去除基板表面之異物之製程中,可效率良好地去除基板表面之顆粒,且可自基板表面容易地去除所形成之膜。本發明之組成物可較好地使用預測日後愈發朝微細化、高長寬比化進展之半導體元件之製造步驟。
W‧‧‧晶圓
圖1A係使用本發明之半導體基板洗淨用組成物之半導體基板之洗淨方法的說明圖。
圖1B係使用本發明之半導體基板洗淨用組成物之半導體基板之洗淨方法的說明圖。
圖1C係使用本發明之半導體基板洗淨用組成物之半導體基板之洗淨方法的說明圖。
本發明之半導體基板洗淨用組成物(以下亦簡稱為「洗淨用組成物」)係用以洗淨半導體基板之組成物。使用該洗淨用組成物於半導體基板表面上形成膜,藉由去除該膜,而可效率良好地去除基板表面尤其是附著於圖案間之顆粒等。
該洗淨用組成物含有[A]溶劑與[B]聚合物。藉由使[B]聚合物含有氟及/或矽原子,推測可使該洗淨用組成物對於基板表面顯示適度之濡濕擴展性,並且使形成之膜對於去除液具有親和性與適度溶解速度,而可以包埋基板表面之顆粒的狀態迅速去除,而可實現高的去除效率者。
該洗淨用組成物可進而含有非聚合物的有機酸(以下簡稱為「[C]有機酸」)。此處,所謂「非聚合物」意指不具有因聚合或縮合反應而產生之重複構造。藉由使該洗淨用組成物含有[C]有機酸,而可更容易地自基板表去除。例如,相較於於矽基板表面形成之膜,有在氮化矽基板、氮化鈦基板之表面形成之膜去除更花費時間之情況。藉由添加[C]有機酸,可縮短去除所需之時間。其理由尚不明瞭,但認為理由之一係例如於基板表面上形成之膜因[C]有機酸分散於[B]聚合物中而成者而可使膜強度適度降低。其結果,認為即使是氮化矽基板等之與[B]聚合物之相互作用較強之基板,亦可更容易地去除塗膜。
再者,該洗淨用組成物除了[A]~[C]成分以外,在不損及本發明範圍內,亦可含有其他任意成分。
以下,針對各成分加以說明。
[A]溶劑若為可溶解或分散[B]聚合物者則均可使用,但較好為可溶解[B]聚合物者。又,添加[C]有機酸時,較
好為可溶解[C]有機酸者。
作為[A]溶劑,舉例為例如醇系溶劑、醚系溶劑、酮系溶劑、醯胺系溶劑、酯系溶劑、烴系溶劑等有機溶劑;水等。
作為醇系溶劑之例,舉例有乙醇、異丙醇、戊醇、4-甲基-2-戊醇、環己醇、3,3,5-三甲基環己醇、糠醇、苄醇、二丙酮醇等之碳數1~18之一元醇,乙二醇、丙二醇、二乙二醇、二丙二醇、三乙二醇、三丙二醇等之碳數2~12之二元醇或該等之部分醚等。
作為醚系溶劑之例,舉例有二乙醚、二丙醚、二丁醚、二異戊醚等之二烷基醚系溶劑,四氫呋喃、四氫吡喃等之環狀醚系溶劑,二苯醚、苯甲醚等之含芳香環之醚系溶劑等。
作為酮系溶劑之例,舉例有丙酮、甲基乙基酮、甲基-正丙基酮、甲基-正丁基酮、二乙基酮、甲基-異丁基酮、2-庚酮、乙基-正丁基酮、甲基-正己基酮、二-異丁基酮、三甲基壬酮等之鏈狀酮系溶劑,環戊酮、環己酮、環庚酮、環辛酮、甲基環己酮等之環狀酮系溶劑,2,4-戊二酮、丙酮基丙酮、苯乙酮等。
作為醯胺系溶劑之例,舉例有N,N’-二甲基咪唑啉酮、N-甲基吡咯啶酮等之環狀醯胺系溶劑,N-甲基甲醯胺、N,N-二甲基甲醯胺、N,N-二乙基甲醯胺、乙醯胺、N-甲基乙醯胺、N,N-二甲基乙醯胺、N-甲基丙醯胺等之鏈狀醯胺系溶劑等。
作為酯系溶劑之例,舉例有乙酸乙酯、乙酸丁酯、乙酸苄酯、乙酸環己酯、乳酸乙酯、3-甲氧基丙酸乙酯等之一元醇羧酸酯系溶劑、或烷二醇單烷醚之單羧酸酯、二烷二醇單烷基醚之單羧酸酯等之多元醇部分醚羧酸酯系溶劑,丁內酯等之環狀酯系溶劑,碳酸二乙酯等之碳酸酯系溶劑,草酸二乙酯、苯二甲酸二乙酯等之多元羧酸烷酯系溶劑。
作為烴系溶劑之例,舉例有正戊烷、異戊烷、正己烷、異己烷、正庚烷、異庚烷、2,2,4-三甲基戊烷、正辛烷、異辛烷、環己烷、甲基環己烷等之脂肪族烴系溶劑,苯、甲苯、二甲苯、均三甲苯、乙基苯、三甲基苯、甲基乙基苯、正丙基苯、異丙基苯、二乙基苯、異丁基苯、三乙基苯、二-異丙基苯、正戊基萘等之芳香族烴系溶劑等。
該等中,較好為有機溶劑,更好為醇系溶劑、醚系溶劑、酮系溶劑、酯系溶劑,又更好為一元醇、二元醇之部分醚、二烷基醚系溶劑、環狀酮系溶劑、一元醇羧酸酯系溶劑、環狀酯系溶劑、多元醇部分醚羧酸酯系溶劑,再更好為4-甲基-2-戊醇、二異戊醚、丙二醇單乙醚、乳酸乙酯、3-甲氧基丙酸甲酯、丁內酯、丙二醇單甲醚乙酸酯。
[A]溶劑中水含有率較好為20質量%以下,更好為5質量%以下,又更好為2質量%以下,最好為0質量%。藉由使[A]溶劑中水含有率為上述上限以下,可更適
度降地所形成之膜的強度,結果可提高該洗淨用組成物之洗淨性。
[A]溶劑之含量下限,較好為50質量%,更好為80質量%,又更好為90質量%。上述含量之上限較好為99.9質量%,更好為99.5質量%,又更好為99.0質量%。藉由使[A]溶劑之含量在上述下限與上限之間,可更提高該洗淨用組成物對於氮化矽基板之洗淨性。該洗淨用組成物亦可含有1種或2種以上之[A]溶劑。
[B]聚合物為含氟原子、矽原子或該等之組合之聚合物。
[B]聚合物之種類並未特別限制,基於合成之容易性、去除性之提高之觀點,較好為聚(甲基)丙烯酸酯、環狀聚烯烴、聚苯乙烯衍生物。
作為[B]聚合物,舉例為例如具有含氟原子之構造單位(以下亦稱為「構造單位(I)」)之聚合物、具有含矽原子之構造單位(以下亦稱為「構造單位(II)」)之聚合物等。
作為構造單位(I),舉例為例如以下述式(1-1)表示之構造單位(以下亦稱為「構造單位(I-1)」)、以下述式(1-2)表示之構造單位(以下亦稱為「構造單位(I-2)」)等。
上述式(1-1)及(1-2)中,Rf分別獨立為碳數1~20之1價之羥基取代、烷羰基取代、烷氧羰基取代、烷羰氧基取代、烷氧羰氧基取代或未取代之氟化烴基。Rf為複數時,複數的Rf可相同亦可不同。
上述式(1-1)中,R1為氫原子、氟原子、甲基或-COOR’。R’為碳數1~20之1價烴基。R2為單鍵、-O-、-CO-、-COO-或-CONH-。R3為碳數1~20之(m+1)價有機基。m為1~3之整數。m為1時,R3亦可為單鍵。
上述式(1-2)中,R2’為單鍵、-O-、-COO-或-CONH-。R3’為碳數1~20之(n+1)價有機基。n為1~3之整數。n為1時,R3’亦可為單鍵。
作為上述R1,基於賦予構造單位(I-1)之單體的共聚合性之觀點,較好為氫原子、甲基,更好為甲基。
作為上述R2,較好為單鍵、-COO-。
作為上述R2’,較好為單鍵。
以上述R3表示之碳數1~20之(m+1)價有機基及R3’表示之碳數1~20之(n+1)價有機基,舉例為例如碳
數1~20之k價(k為m+1或n+1)之烴基、於該等烴基之碳-碳間含有2價之含雜原子之基(a)、上述烴基及基(a)所具有之氫原子之一部分或全部經1價之含雜原子之基取代之基等。
上述碳數1~20之k價烴基舉例為例如碳數1~20之k價鏈狀烴基、碳數3~20之k價脂環式烴基、碳數6~20之k價芳香族烴基等。
上述碳數1~20之k價鏈狀烴基舉例為自例如甲烷、乙烷、丙烷、丁烷等烷類、乙烯、丙烯、丁烯等之烯類、乙炔、丙炔、丁炔等之炔類等去除k個氫原子之基等。
上述碳數3~20之k價脂環式烴基舉例為自例如環丙烷、環丁烷、環戊烷、環己烷、降冰片烷、金剛烷等環烷類、環戊烯、環己烯、降冰片烯等環烯類等去除k個氫原子之基等。
上述碳數6~20之k價芳香族烴基舉例為自例如苯、甲苯、萘、蒽等芳烴、甲苯、乙基苯、甲基萘等烷基芳烴等去除k個氫原子之基等。
上述2價及1價之含雜原子之基所具有之雜原子舉例為例如氧原子、氮原子、硫原子、磷原子等。
上述2價之含雜原子之基舉例為例如-O-、-NH-、-S-、-CO-、-CS-、該等中之2個以上組合而成之基等。
上述1價之含雜原子之基舉例為例如羥基、胺基、氰基、硝基等。
作為上述R3,較好為單鍵、烴基、氟化烴
基、脂肪族雜環基,m為1時,更好為單鍵、烷二基、環烷二基、芳烴二基、芳烴二基烷二基、含氧原子之脂肪族雜環基,又更好為單鍵、丙二基、環己烷二基、環己基乙烷二基、苯二基、苯二基乙烷二基、六氟丙烷二基環己烷二基、降冰片烷內酯二基羰氧基。
作為上述R3’,較好為單鍵、烴基,更好為鏈狀烴基,n為1時,又更好為甲烷二基。
以上述Rf表示之碳數1~20之1價氟化烴基舉例為例如氟甲基、二氟甲基、三氟甲基、三氟乙基、五氟正丙基、六氟異丙基等之碳數1~20之1價氟化鏈狀烴基、二氟環戊基、十氟環己基、二氟降冰片基等之碳數3~20之1價氟化脂環式烴基、氟苯基、三氟苯基、五氟苯基、三氟萘基等之碳數6~20之1價氟化芳香族烴基等。
以上述Rf表示之碳數1~20之1價之羥基取代氟化烴基舉例為例如羥基二(三氟甲基)甲基、羥基二(三氟甲基)乙基、羥基二(三氟甲基)丙基、羥基二(三氟甲基)丁基等之碳數1~20之羥基取代氟化鏈狀烴基,羥基四氟環戊基、羥基四氟環己基等之碳數3~20之羥基取代氟化脂環式烴基,羥基苯基二氟甲基等之碳數6~20之羥基取代氟化芳香族烴基等。
以上述Rf表示之碳數1~20之1價之烷羰基取代氟化烴基舉例為例如甲基羰基二氟甲基、第三丁基羰基六氟丙基等之碳數1~20之烷羰基取代氟化鏈狀烴基,
甲基羰基二氟環己基、第三丁基羰基六氟環己基等之碳數3~20之烷羰基取代氟化脂環式烴基,甲基羰基二氟苯基、第三丁基羰基四氟苯基等之碳數6~20之烷羰基取代氟化芳香族烴基等。
以上述Rf表示之碳數1~20之1價之烷氧羰基取代氟化烴基舉例為例如甲氧基羰基二氟甲基、第三丁氧基羰基六氟丙基等之碳數1~20之烷氧羰基取代氟化鏈狀烴基,甲氧基羰基二氟環己基、第三丁氧基羰基六氟環己基等之碳數3~20之烷氧羰基取代氟化脂環式烴基,甲氧基羰基二氟苯基、第三丁氧基羰基四氟苯基等之碳數6~20之烷氧羰基取代氟化芳香族烴基等。
以上述Rf表示之碳數1~20之1價之烷氧羰氧基取代氟化烴基舉例為例如甲氧基羰氧基二氟甲基、第三丁氧基羰氧基六氟丙基等之碳數1~20之烷氧羰氧基取代氟化鏈狀烴基,甲氧基羰氧基二氟環己基、第三丁氧基羰氧基六氟環己基等之碳數3~20之烷氧羰氧基取代氟化脂環式烴基,甲氧基羰氧基二氟苯基、第三丁氧基羰氧基四氟苯基等之碳數6~20之烷氧羰氧基取代氟化芳香族烴基等。
以上述Rf表示之碳數1~20之1價之羥基取代氟化烴基舉例為例如以下述式(i)表示之基等。
上述式(i)中,RA及RB分別獨立為氫原子、氟原子、碳數1~8之烷基或氟化烷基。但,R1及R2之至少任一者為氟原子或碳數1~8之氟化烷基。*表示與構成聚合物之其他原子之鍵結部位。
作為Rf,該等中較好為羥基取代氟化鏈狀烴基,更好為以上述式(i)表示之基,又更好為羥基二(三氟甲基)甲基。
作為上述m,較好為1或2,更好為1。
作為上述n,較好為1。
作為構造單位(I-1),舉例為例如以下述式表示之構造單位等。
上述式中,R1與上述式(1-1)同義。
作為構造單位(I-2),舉例為例如以下述式表示之構造單位等。
作為構造單位(II),舉例為例如以下述式(2)表示之構造單位(以下亦稱為「構造單位(II-1)」)等。
上述式(2)中,R4為氫原子、氟原子、甲基或-COOR”。R”為碳數1~20之1價烴基。R5為單鍵、-O-、-CO-、-COO-或-CONH-。R6為單鍵或碳數1~20之2價有
機基。Rg為矽數1~20之含矽原子之基。
以上述R6表示之碳數1~20之2價有機基舉例為與上述式(1-1)中作為R3所例示之基中m為1者同樣之基等。
作為構造單位(II-1),舉例為例如以下述式表示之構造單位等。
構造單位(I)之含有比例之下限,相對於構成[B]聚合物之全部構造單位,較好為10莫耳%,更好為50莫耳%,又更好為90莫耳%,最好為95莫耳%。上述含有比例之上限較好為100莫耳%。
構造單位(II)之含有比例之下限,相對於構成[B]聚合物之全部構造單位,較好為10莫耳%,更好為20莫耳%,又更好為30莫耳%。上述含有比例之上限較好為100
莫耳%,更好為70莫耳%,又更好為50莫耳%。
構造單位(I)及構造單位(II)之合計含有比例之下限,相對於構成[B]聚合物之全部構造單位,較好為30莫耳%,更好為60莫耳%,又更好為90莫耳%,最好為95莫耳%。上述合計含有比例之上限較好為100莫耳%。
藉由將構造單位(I)及構造單位(II)之含有比例設在上述範圍時,可更提高膜之去除性。
[B]聚合物之氟原子含有率之下限,較好為1質量%,更好為5質量%,又更好為10質量%,最好為20質量%。上述氟原子含有率之上限,較好為60質量%,更好為50質量%,又更好為40質量%。
[B]聚合物之矽原子含有率之下限,較好為1質量%,更好為5質量%,又更好為10質量%,最好為15質量%。上述矽原子含有率之上限,較好為40質量%,更好為30質量%,又更好為25質量%。
[B]聚合物之氟原子及矽原子之合計含有率之下限,較好為2質量%,更好為8質量%,又更好為15質量%,最好為25質量%。上述合計含有率之上限,較好為65質量%,更好為55質量%,又更好為45質量%。
藉由將氟原子及矽原子之含有率設在上述範圍時,可更提高膜之去除性。
又,[B]聚合物之氟原子及矽原子含有率,可藉由19F-NMR或29Si-NMR測定求出聚合物之構造,並由其構造算出。
[B]聚合物進而亦可具有含β-二酮構造之構造單位、含羧基之構造單位、含磺基之構造單位、含磺醯胺基之構造單位、源自(甲基)丙烯酸烷酯之構造單位、含單環或多環內酯骨架之構造單位、含羥基之構造單位、含芳香環之構造單位、含酸解離性基之構造單位等。
[B]聚合物中含磺基之構造單位之含有比例,相對於構成[B]聚合物之全部構造單位,較好為3莫耳%以下,更好為2莫耳%以下,又更好為1莫耳%以下。上述含有比例若為上述上限以下,則可更提高於氮化矽基板洗淨時之膜去除性。
[B]聚合物較好為共聚物。藉由使用共聚物,可更提高粒子去除性。
[B]聚合物之酸解離常數較好為小於後述之[C]有機酸之酸解離常數。藉由使[B]聚合物之酸解離常數小於[C]有機酸,可進一步提高膜自基板表面之去除性。[B]聚合物及[C]有機酸之酸解離常數可藉由公知之滴定法求得。評價酸解離常數之相對大小時,作為比滴定法更簡便之方法,亦可使用化學計算軟體由計算值求出。例如可利用ChemAxon公司所提供之程式計算。
該洗淨用組成物中之[B]聚合物之含量下限,較好為0.1質量%,更好為0.5質量%,又更好為1質量%。上述含量之上限,較好為50質量%,更好為30質量%,又更好為15質量%。藉由使上述含量在上述下限與上述上限之間,可進一步提高膜自基板表面之去除性。
相對於該洗淨用組成物中之全部固體成分之[B]聚合物含量下限,較好為30質量%,更好為40質量%,又更好為50質量%。上述含量之上限,較好為99質量%,更好為98質量%,又更好為96質量%。藉由使上述含量在上述下限與上述上限之間,可進一步提高膜自基板表面之去除性。
[C]有機酸為並非聚合物之有機酸。本發明之洗淨用組成物可進而含有[C]有機酸。藉由添加[C]有機酸,可更容易去除在基板表面上所形成之膜。[C]有機酸之分子量上限,例如為500,較好為400,更好為300。[C]有機酸之分子量下限,例如為50,較好為55。
作為[C]有機酸,舉例為例如乙酸、丙酸、丁酸、戊酸、己酸、環己烷羧酸、環己烷乙酸、1-金剛烷羧酸、苯甲酸、苯基乙酸等之單羧酸;二氟乙酸、三氟乙酸、五氟丙酸、七氟丁酸、全氟苯基乙酸、二氟苯甲酸等之含氟原子之單羧酸;10-羥基癸酸、巰基乙酸、5-氧代己酸、3-甲氧基環己烷羧酸、樟腦羧酸、二硝基苯甲酸、硝基苯基乙酸、乳酸、乙醇酸、甘油酸、水楊酸、茴香酸、沒食子酸、呋喃羧酸等之含雜原子之單羧酸;(甲基)丙烯酸、巴豆酸、桂皮酸等之含有雙鍵之單羧酸等之單羧酸化合物、草酸、丙二酸、琥珀酸、戊二酸、
己二酸、十二烷二羧酸、丙烷三羧酸、丁烷四羧酸、六氟戊二酸、環己烷六羧酸、1,4-萘二羧酸、鄰苯二甲酸、間苯二甲酸、對苯二甲酸、偏苯三酸、均苯四酸等之聚羧酸;上述聚羧酸之部分酯化物;二氟丙二酸、四氟鄰苯二甲酸等之含氟原子之聚羧酸;酒石酸、檸檬酸、蘋果酸、丙醇二酸(tartronic acid)、二乙醇酸、亞胺基二乙酸等之含雜原子之聚羧酸;馬來酸、富馬酸等之含有雙鍵之聚羧酸等之聚羧酸化合物等。
[C]有機酸對25℃下之水的溶解度下限較好為5質量%,更好為7質量%,又更好為10質量%。上述溶解度之上限,較好為50質量%,更好為40質量%,又更好為30質量%。藉由使上述溶解度在上述下限與上述上限之間,可更容易地去除所形成之膜。
[C]有機酸較好於25℃下為固體。若[C]有機酸於25℃下為固體,認為固體狀之[C]有機酸於由該洗淨用組成物所形成之膜中會析出,而更提高去除性。
作為[C]有機酸,基於更容易去除膜之觀點,較好為多元羧酸,更好為草酸、蘋果酸、檸檬酸。
該洗淨用組成物中之[C]有機酸含量之下限較好為0.01質量%,更好為0.05質量%,又更好為0.1質量%。上述含量之上限較好為30質量%,更好為20質量
%,又更好為10質量%。
相對於該洗淨用組成物中全部固體成分之[C]有機酸含量之下限較好為0.5質量%,更好為1質量%,又更好為3質量%。上述含量之上限較好為30質量%,更好為20質量%,又更好為10質量%。
藉由使[C]有機酸含量在上述下限與上述上限之間,可更容易地去除膜。
該洗淨用組成物亦可含有上述[A]~[C]成分以外之其他任意成分。至於其他任意成分,舉例為例如界面活性劑等。
上述界面活性劑舉例為例如聚氧伸乙基月桂醚、聚氧伸乙基硬脂醚、聚氧伸乙基油醚、聚氧伸乙基正辛基苯基醚、聚氧伸乙基正壬基苯基醚、聚乙二醇二月桂酸酯、聚乙二醇二硬脂酸酯等之非離子系界面活性劑等。
上述界面活性劑之含量通常為2質量%以下,較好為1質量%以下。
使用該洗淨用組成物之半導體基板之洗淨方法具備下述步驟:將該洗淨用組成物塗佈於半導體基板表面之步驟(以下亦稱為「塗佈步驟」)與去除所形成之膜的步驟(以下亦稱為「去除步驟」)。藉由使用上述洗淨用組成物於基
板表面形成膜,而可效率良好地去除基板表面之異物。再者,所形成之膜容易自基板表面去除。因此,上述洗淨用組成物對於由各種材質所成之基板均可適用。可適用之基板之例舉例有矽基板、鋁基板、鎳基板、鉻基板、鉬基板、鎢基板、銅基板、鉭基板、鈦基板等之金屬或半金屬基板;氮化矽基板、氧化鋁基板、二氧化矽基板、氮化鉭基板、氮化鈦等之陶瓷基板等。該等中,較好為矽基板、氮化矽基板、氮化鈦基板,更好為氮化矽基板。
本發明之洗淨用組成物應用於基板洗淨之方法之一例參照圖式加以詳細說明。
如圖1A所示,本應用例中,作為用以於晶圓W上形成膜之處理液係使用上述洗淨用組成物。首先,將洗淨用組成物供給於晶圓W。至於供給方法舉例有例如旋轉塗佈(spin-coating)、澆注塗佈、輥塗佈等。接著藉由將所供給之洗淨用組成物加熱及/或減壓,而將洗淨用組成物所含之溶劑之一部分或全部去除,而使洗淨用組成物所含之固體成分固化或硬化而形成膜。此處所謂「固化」意指固體化,所謂「硬化」意指分子彼此連結而增大分子量(例如交聯或聚合等)。此時,附著於圖案之顆粒將被取入膜中而自圖案等拉離(參照圖1B)。所形成之膜之膜厚較好為10nm~1,000nm,更好為20nm~500nm。
其次,藉由於膜上供給溶解膜之去除液,而將膜自晶圓W完全去除。其結果,顆粒與膜一起自晶圓W去除。作為去除液,可使用水、有機溶劑、鹼性水溶液
等,較好為水、鹼性水溶液,更好為鹼性水溶液。作為鹼性水溶液,可使用鹼顯像液。鹼顯像液可使用公知者。具體例舉例為含有氨、氫氧化四甲銨(TMAH:TetraMethylAmmoniumHydroxide)及膽鹼中之至少一種之水溶液等。作為有機溶劑可使用例如稀釋液(thinner)、異丙醇(IPA)、4-甲基-2-戊醇(MIBC)、甲苯、乙酸酯類、醇類、二醇類(丙二醇單甲醚等)等。又,膜之去除係首先將作為去除液之水供給於膜上,接著供給鹼顯像液等,亦可依序使用不同種類之去除液。藉由依序使用不同種類之去除液,可更提高膜去除性。
藉由供給鹼顯像液等之去除液,而使晶圓W或圖案表面與顆粒表面如圖1C所示產生同極性(此處為負)的ζ電位。藉由使自晶圓W等被拉離之顆粒帶電為與晶圓W等同極性之ζ電位,而成為與晶圓W等互相排斥。藉此,防止顆粒朝晶圓W等之再附著。
如此,本應用例中,與以往利用物理力之顆粒去除比較,由於可藉由較弱之力去除顆粒,故可抑制圖案崩塌。且,由於不利用化學作用而進行顆粒之去除,故可抑制因蝕刻作用等侵蝕基底膜。再者,即使係利用物理力之基板洗淨方法難以去除、且粒徑較小之顆粒或進入圖案之間隙間之顆粒亦可容易地去除。
對晶圓W供給之洗淨用組成物最終可自晶圓W完全去除。因此,洗淨後之晶圓W成為塗佈洗淨用組成物之前之狀態,具體而言成為電路形成面露出之狀態。
上述洗淨方法可藉由公知之各種裝置、方法進行。較佳之裝置例,可舉例日本特開2014-99583號公報所揭示之基板洗淨裝置。
以下,針對本發明之洗淨用組成物之實施例加以說明。
所得聚合物之重量平均分子量(Mw)及數平均分子量(Mn)係使用Tosoh製GPC管柱(G2000HXL:2根,G3000HXL:1根,G4000HXL:1根),以流量:1.0mL/分鐘,溶出溶劑:四氫呋喃,試料濃度:1.0質量%,試料注入量:100μL,管柱溫度:40℃,檢測器:示差折射計之分析條件,以單分散聚苯乙烯為標準之凝膠滲透層析儀(GPC)測定。且分散度(Mw/Mn)係由Mw及Mn之測定結果算出。
作為聚合物之原料使用之化合物顯示如下。
將化合物(M-1)100g(100莫耳%)及偶氮雙異丁腈(AIBN)7.29g(7莫耳%)溶解於2-丁酮100g中,準備單體溶液。將投入有100g之2-丁酮之1,000mL之三頸燒瓶以氮氣吹拂30分鐘。氮氣吹拂後加熱至80℃,邊攪拌邊使用滴加漏斗以3小時滴加上述單體溶液。將滴加開始設為聚合開始時間,聚合6小時,聚合結束後,將反應溶液冷卻至30℃以下。將反應溶液減壓濃縮至質量成為150g。投入甲醇150g及正己烷750g,進行分離。分離後,回收下層液。於回收之下層液中投入正己烷750g,再度分離純化。分離後,回收下層液。自回收之下層液去除溶劑,添加4-甲基-2-戊醇,獲得含聚合物(P-1)之溶液。結果示於表1。
所使用之化合物及組合如表1般變更以外,與製造例1同樣合成聚合物(P-2)~(P-22)。
混合聚合物(P-1)100質量份、4-甲基-2-戊醇(MIBC)7,400質量份,作成均一溶液。該溶液使用HDPE製之過濾器(孔徑5nm,日本Pall公司製PhotoKleen EZD)過濾。藉由液中之顆粒計數器(Rion公司製,KS-41B)確認液中之
150μm以下之顆粒減少至10個/mL,調製洗淨用組成物(D-1)。固體成分濃度約為1.5質量%。
將所用溶劑及聚合物如表2所示般變更以外,與實施例1同樣調製洗淨用組成物(D-2)~(D-38)及比較組成物(CD-1)、(CD-2)。
混合聚合物(P-1)100質量份、作為有機酸之酒石酸(C-1)5.0質量份及作為溶劑之4-甲基-2-戊醇7,400質量份,作成均一溶液。該溶液使用HDPE製之過濾器(孔徑5nm,日本Pall公司製PhotoKleen EZD)過濾。藉由液中之顆粒計數器(Rion公司製,KS-41B)確認液中之150μm以下之顆粒減少至10個/mL,調製洗淨用組成物(D-31)。固體成分濃度約為1.5質量%。
將溶劑、聚合物及有機酸如表2所示般變更以外,與實施例31同樣(溶劑為其總質量與實施例31相同)調製洗淨用組成物(D-32)~(D-38)及比較組成物(CD-3)~(CD-6)。
各實施例及比較例所用之溶劑如下。
MIBC:4-甲基-2-戊醇
PGME:丙二醇單甲醚
DIAE:二異戊醚
GBL:γ-丁內酯
PGMEA:丙二醇單甲醚乙酸酯
EL:乳酸乙酯
CHN:環己酮
BuOAc:乙酸丁酯
PGEE:丙二醇單乙醚
MMP:3-甲氧基丙酸甲酯
各實施例及比較例所用之有機酸如下。本實施例中,有機酸均使用和光純藥製之試藥。
構造式如下所示。
C-1:酒石酸
C-2:草酸
C-3:檸檬酸
C-4:馬來酸
C-5:蘋果酸
C-6:富馬酸
C-7:鄰苯二甲酸
C-8:對苯二甲酸
C-9:聚丙烯酸(和光純藥製聚丙烯酸5000)
C-10:三苯基鎏九-正丁烷磺酸鹽
於預先附著粒徑200nm之二氧化矽粒子之12吋晶圓上,使用上述基板洗淨裝置,藉由旋轉塗佈法形成各組成物之樹脂膜。針對形成有樹脂膜者供給去除液,去除樹脂膜。膜去除性自去除液開始供給後20秒以內完成樹脂膜之完全去除者判定為「A」,超過20秒且1分鐘以內完成
去除者判定為「B」,1分鐘以內無法完成去除者判定為「C」。又,去除步驟後殘存於晶圓上之氧化矽粒子數使用暗視野缺陷裝置(SP2,KLA-TENCOR公司製)進行分析。粒子去除性於氧化矽粒子去除率為90%以上者判定為「S」,70%以上且未達90%者判定為「A」,30%以上且未達70%者判定為「B」,未達30%者判定為「C」。又,無法形成樹脂膜者於粒子去除性之欄中記載為「無法塗佈」。
作為晶圓之矽晶圓分別使用作為洗淨用組成物之組成物(D-1)~(D-38)及比較用組成物(CD-1)~(CD-6)、作為去除液使用表3所示者(顯像液(2.38質量%之氫氧化四甲基銨水溶液)或水),以上述評價方法評價粒子去除性及膜去除性。結果示於表3。
除了將矽晶圓變更為氮化矽或氮化鈦,使用之洗淨用組成物與去除液之組合變更為表4所示以外,與上述同樣評價粒子去除性及膜去除性。結果示於表4。
由各評價例與各比較評價例之比較,可知本發明之洗淨用組成物於在基板表面形成膜並將其去除之基板洗淨方法中,粒子去除性及膜去除性均優異。且由評價例4~7與評價例36~39之比較,可知藉由添加有機酸,尤其是使用水作為去除液時之膜去除性進一步提高。
依據本發明之半導體基板洗淨用組成物,其在於基板表面形成膜並去除基板表面之異物之製程中,可效率良好地去除基板表面之顆粒,且可自基板表面容易地去除所形成之膜。該半導體基板洗淨用組成物可較好地使用預測日後愈發朝微細化、高長寬比化進展之半導體基板製造中。
Claims (5)
- 一種半導體基板洗淨用組成物,其為在基板表面上形成膜而使用者,其中含有溶劑(但除N-羥乙基吡咯烷酮以外)、含氟原子、矽原子或該等組合之聚合物,與非聚合物之多元羧酸的有機酸。
- 一種半導體基板洗淨用組成物,其為在基板表面上形成膜而使用者,其中含有溶劑(但除N-羥乙基吡咯烷酮以外)、含氟原子、矽原子或該等組合之聚合物,與非聚合物之在25℃為固體的有機酸。
- 如請求項1或2之半導體基板洗淨用組成物,其中上述溶劑中水之含量為20質量%以下。
- 如請求項1或2之半導體基板洗淨用組成物,其中上述聚合物之酸解離常數小於上述有機酸之酸解離常數。
- 如請求項1或2之半導體基板洗淨用組成物,其中上述有機酸之對25℃之水之溶解度為5質量%以上。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-157071 | 2014-07-31 | ||
JP2014157071A JP6350080B2 (ja) | 2014-07-31 | 2014-07-31 | 半導体基板洗浄用組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201609889A TW201609889A (zh) | 2016-03-16 |
TWI678388B true TWI678388B (zh) | 2019-12-01 |
Family
ID=55179384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104124383A TWI678388B (zh) | 2014-07-31 | 2015-07-28 | 半導體基板洗淨用組成物 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20160032227A1 (zh) |
JP (1) | JP6350080B2 (zh) |
KR (1) | KR20160016634A (zh) |
CN (1) | CN105319874A (zh) |
TW (1) | TWI678388B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6350080B2 (ja) * | 2014-07-31 | 2018-07-04 | Jsr株式会社 | 半導体基板洗浄用組成物 |
JP6674628B2 (ja) * | 2016-04-26 | 2020-04-01 | 信越化学工業株式会社 | 洗浄剤組成物及び薄型基板の製造方法 |
JP6112330B1 (ja) * | 2016-05-10 | 2017-04-12 | Jsr株式会社 | 半導体洗浄用組成物および洗浄方法 |
JP6695749B2 (ja) * | 2016-06-30 | 2020-05-20 | ライオン株式会社 | 清浄化用皮膜形成剤およびこれを用いた清浄化処理方法 |
JP6899220B2 (ja) * | 2017-01-11 | 2021-07-07 | 株式会社ダイセル | レジスト除去用組成物 |
WO2018190278A1 (ja) | 2017-04-13 | 2018-10-18 | Jsr株式会社 | 半導体基板洗浄用組成物 |
WO2019009054A1 (ja) * | 2017-07-03 | 2019-01-10 | 東京エレクトロン株式会社 | 基板処理システム、基板洗浄方法および記憶媒体 |
JP7227757B2 (ja) | 2018-05-31 | 2023-02-22 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2020096115A (ja) * | 2018-12-14 | 2020-06-18 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 基板洗浄液、これを用いる洗浄された基板の製造方法およびデバイスの製造方法 |
JP7530048B2 (ja) * | 2019-02-15 | 2024-08-07 | 日産化学株式会社 | 洗浄剤組成物及び洗浄方法 |
WO2020179819A1 (ja) * | 2019-03-05 | 2020-09-10 | 日産化学株式会社 | 洗浄剤組成物及び洗浄方法 |
JP7220119B2 (ja) * | 2019-05-22 | 2023-02-09 | 信越化学工業株式会社 | 基板用仮接着剤の洗浄液、基板の洗浄方法および支持体または基板の洗浄方法 |
EP3974070A4 (en) * | 2019-05-22 | 2023-07-12 | Shin-Etsu Chemical Co., Ltd. | DETERGENT COMPOSITION, METHOD OF CLEANING A SUBSTRATE AND METHOD OF CLEANING CARRIER OR SUBSTRATE |
EP3997520B1 (en) | 2019-07-08 | 2023-12-20 | Merck Patent GmbH | Rinse and method of use thereof for removing edge protection layers and residual metal hardmask components |
CN114284130A (zh) * | 2020-09-27 | 2022-04-05 | 东莞新科技术研究开发有限公司 | 去除晶圆表面杂质的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200702927A (en) * | 2005-05-01 | 2007-01-16 | Rohm & Haas Elect Mat | Photoresist composition for immersion lithography |
TW201419374A (zh) * | 2012-08-07 | 2014-05-16 | Tokyo Electron Ltd | 基板洗淨裝置、基板洗淨系統、基板洗淨方法及記憶媒體 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4786658A (en) * | 1986-02-27 | 1988-11-22 | Dainippon Ink And Chemicals, Inc. | Fluorine-containing resin composition having low refractive index |
DE69131853T2 (de) * | 1990-03-16 | 2000-06-29 | Japan Field Co | Reinigungsverfahren |
JPH0774137A (ja) | 1993-07-05 | 1995-03-17 | Dainippon Screen Mfg Co Ltd | 基板表面のパーティクル除去方法及びその装置 |
JP3744029B2 (ja) * | 1995-08-17 | 2006-02-08 | 大日本インキ化学工業株式会社 | 洗浄剤 |
US5782962A (en) * | 1996-10-16 | 1998-07-21 | Sara Lee Corporation | Cleaning and polishing composition |
JP3898324B2 (ja) * | 1998-02-04 | 2007-03-28 | 東レ・ダウコーニング株式会社 | オルガノシロキサン系洗浄剤および洗浄方法 |
US6641463B1 (en) * | 1999-02-06 | 2003-11-04 | Beaver Creek Concepts Inc | Finishing components and elements |
US6436832B1 (en) * | 2000-05-23 | 2002-08-20 | Applied Materials, Inc | Method to reduce polish initiation time in a polish process |
US20060029808A1 (en) * | 2004-08-06 | 2006-02-09 | Lei Zhai | Superhydrophobic coatings |
US20060255315A1 (en) * | 2004-11-19 | 2006-11-16 | Yellowaga Deborah L | Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
JP4164601B2 (ja) * | 2005-01-13 | 2008-10-15 | Dic株式会社 | 洗浄剤 |
CN101165854A (zh) * | 2006-10-19 | 2008-04-23 | 大日本网目版制造株式会社 | 基板处理装置和基板处理方法 |
KR101433565B1 (ko) * | 2007-09-26 | 2014-08-27 | 제이에스알 가부시끼가이샤 | 액침용 상층막 형성용 조성물 및 액침용 상층막 및 포토레지스트 패턴 형성 방법 |
CA2755982A1 (en) * | 2009-03-20 | 2010-09-23 | Ciba Corporation | Fast drying ampholytic polymers for cleaning compositions |
JP2010258014A (ja) * | 2009-04-21 | 2010-11-11 | Jsr Corp | 洗浄用組成物および洗浄方法 |
CN102471726A (zh) * | 2009-07-15 | 2012-05-23 | 朗姆研究公司 | 高级基底清洁的材料和系统 |
JP2012018962A (ja) * | 2010-07-06 | 2012-01-26 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
JP2012058273A (ja) * | 2010-09-03 | 2012-03-22 | Kanto Chem Co Inc | フォトレジスト残渣およびポリマー残渣除去液組成物 |
CN102533171B (zh) * | 2010-12-20 | 2015-02-11 | 常州化学研究所 | 一种固体清洁胶及其制备方法 |
US8987181B2 (en) * | 2011-11-08 | 2015-03-24 | Dynaloy, Llc | Photoresist and post etch residue cleaning solution |
JP6066552B2 (ja) * | 2011-12-06 | 2017-01-25 | 関東化學株式会社 | 電子デバイス用洗浄液組成物 |
JP2014093385A (ja) * | 2012-11-02 | 2014-05-19 | Fujifilm Corp | インプリント用密着膜の製造方法およびパターン形成方法 |
WO2014097309A1 (en) * | 2012-12-17 | 2014-06-26 | Asian Paints Ltd. | Stimuli responsive self cleaning coating |
JP5886804B2 (ja) * | 2013-09-02 | 2016-03-16 | 信越化学工業株式会社 | レジスト組成物の製造方法 |
JP6350080B2 (ja) * | 2014-07-31 | 2018-07-04 | Jsr株式会社 | 半導体基板洗浄用組成物 |
-
2014
- 2014-07-31 JP JP2014157071A patent/JP6350080B2/ja active Active
-
2015
- 2015-07-28 TW TW104124383A patent/TWI678388B/zh active
- 2015-07-28 US US14/810,981 patent/US20160032227A1/en not_active Abandoned
- 2015-07-28 KR KR1020150106469A patent/KR20160016634A/ko not_active Application Discontinuation
- 2015-07-30 CN CN201510459136.3A patent/CN105319874A/zh active Pending
-
2017
- 2017-05-09 US US15/590,326 patent/US10023827B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200702927A (en) * | 2005-05-01 | 2007-01-16 | Rohm & Haas Elect Mat | Photoresist composition for immersion lithography |
TW201419374A (zh) * | 2012-08-07 | 2014-05-16 | Tokyo Electron Ltd | 基板洗淨裝置、基板洗淨系統、基板洗淨方法及記憶媒體 |
Also Published As
Publication number | Publication date |
---|---|
CN105319874A (zh) | 2016-02-10 |
US20160032227A1 (en) | 2016-02-04 |
KR20160016634A (ko) | 2016-02-15 |
TW201609889A (zh) | 2016-03-16 |
JP2016033198A (ja) | 2016-03-10 |
US10023827B2 (en) | 2018-07-17 |
JP6350080B2 (ja) | 2018-07-04 |
US20170240851A1 (en) | 2017-08-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI678388B (zh) | 半導體基板洗淨用組成物 | |
JP6426936B2 (ja) | 基板洗浄方法および記憶媒体 | |
TWI704219B (zh) | 半導體基板洗淨用膜形成組成物及半導體基板的洗淨方法 | |
JP6371253B2 (ja) | 基板洗浄システム、基板洗浄方法および記憶媒体 | |
JP6060577B2 (ja) | ネガ型レジストパターン形成方法 | |
TWI521018B (zh) | Poly Silicon alumoxane composition and pattern forming method | |
KR101953079B1 (ko) | 포토레지스트 조성물 | |
TWI752217B (zh) | 半導體基板清洗用組成物 | |
KR20140148383A (ko) | 포토레지스트 조성물, 레지스트 패턴 형성 방법 및 중합체 | |
TWI661270B (zh) | 半導體裝置製造用組成物及使用該半導體裝置製造用組成物之圖型形成方法 | |
TW202006108A (zh) | 基板處理膜形成用組成物及基板的處理方法 | |
JP2018174346A (ja) | 基板洗浄システム、基板洗浄方法および記憶媒体 | |
WO2020130094A1 (ja) | 基板処理膜形成用組成物及び半導体基板の洗浄方法 | |
JP6922394B2 (ja) | レジストパターン形成方法 | |
TWI666265B (zh) | 光阻下層膜形成用聚矽氧烷組成物及圖型形成方法 | |
WO2020189683A1 (ja) | 組成物及び基板の処理方法 | |
JP6822179B2 (ja) | 感放射線性樹脂組成物及びレジストパターン形成方法 | |
JP6432145B2 (ja) | レジスト用重合体の製造方法 | |
TW202014440A (zh) | 多層抗蝕劑製程用底層膜形成組成物及圖案形成方法 | |
KR20140148389A (ko) | 액침 노광용 감방사선성 수지 조성물 및 레지스트 패턴 형성 방법 |