TWI674325B - MoNb靶材 - Google Patents

MoNb靶材 Download PDF

Info

Publication number
TWI674325B
TWI674325B TW107122348A TW107122348A TWI674325B TW I674325 B TWI674325 B TW I674325B TW 107122348 A TW107122348 A TW 107122348A TW 107122348 A TW107122348 A TW 107122348A TW I674325 B TWI674325 B TW I674325B
Authority
TW
Taiwan
Prior art keywords
target
film
phase
monb
sputtering
Prior art date
Application number
TW107122348A
Other languages
English (en)
Chinese (zh)
Other versions
TW201907023A (zh
Inventor
福岡淳
青木大輔
斉藤和也
上野英
Original Assignee
日商日立金屬股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立金屬股份有限公司 filed Critical 日商日立金屬股份有限公司
Publication of TW201907023A publication Critical patent/TW201907023A/zh
Application granted granted Critical
Publication of TWI674325B publication Critical patent/TWI674325B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05Metallic powder characterised by the size or surface area of the particles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12Both compacting and sintering
    • B22F3/14Both compacting and sintering simultaneously
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/045Alloys based on refractory metals
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04Alloys based on tungsten or molybdenum
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10Processes characterised by the sequence of their steps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW107122348A 2017-07-05 2018-06-28 MoNb靶材 TWI674325B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017131701 2017-07-05
JP2017-131701 2017-07-05
JP2017-199185 2017-10-13
JP2017199185 2017-10-13

Publications (2)

Publication Number Publication Date
TW201907023A TW201907023A (zh) 2019-02-16
TWI674325B true TWI674325B (zh) 2019-10-11

Family

ID=64989883

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107122348A TWI674325B (zh) 2017-07-05 2018-06-28 MoNb靶材

Country Status (4)

Country Link
JP (1) JP7110749B2 (ko)
KR (1) KR102161580B1 (ko)
CN (1) CN109207941B (ko)
TW (1) TWI674325B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210019170A (ko) 2019-08-12 2021-02-22 주식회사 리딩유아이 몰리브덴 합금 스퍼터링 타깃 및 이의 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200540282A (en) * 2004-03-31 2005-12-16 Hitachi Metals Ltd Sputter target material and method of producing the same
CN102560383A (zh) * 2012-01-12 2012-07-11 宝鸡市科迪普有色金属加工有限公司 钼铌合金板靶材加工工艺
TW201516160A (zh) * 2013-10-29 2015-05-01 Plansee Se 濺鍍靶及製造彼之方法
TW201715054A (zh) * 2015-10-01 2017-05-01 Hitachi Metals Ltd 電子零件用積層配線膜及被覆層形成用濺鍍靶材

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100600908B1 (ko) 1998-06-29 2006-07-13 가부시끼가이샤 도시바 스퍼터 타겟
JP4432015B2 (ja) * 2001-04-26 2010-03-17 日立金属株式会社 薄膜配線形成用スパッタリングターゲット
JP5518375B2 (ja) 2008-09-19 2014-06-11 山陽特殊製鋼株式会社 加速電極用ドリル加工性に優れたモリブデン合金からなる成形体およびその製造方法
CN102321871B (zh) * 2011-09-19 2013-03-20 基迈克材料科技(苏州)有限公司 热等静压生产平板显示器用钼合金溅射靶材的方法
JP2013083000A (ja) * 2011-09-28 2013-05-09 Hitachi Metals Ltd 焼結Mo合金スパッタリングターゲット材の製造方法
KR102316360B1 (ko) * 2013-10-29 2021-10-22 플란제 에스이 스퍼터링 타깃 및 제조방법
JP6459058B2 (ja) 2015-03-30 2019-01-30 日立金属株式会社 Mo合金ターゲット
AT15356U1 (de) * 2016-09-29 2017-07-15 Plansee Se Sputtering Target
CN109439990A (zh) * 2018-12-29 2019-03-08 宁波高新区敦和科技有限公司 一种高致密度高含量钼铌合金靶材的制备工艺

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200540282A (en) * 2004-03-31 2005-12-16 Hitachi Metals Ltd Sputter target material and method of producing the same
CN102560383A (zh) * 2012-01-12 2012-07-11 宝鸡市科迪普有色金属加工有限公司 钼铌合金板靶材加工工艺
TW201516160A (zh) * 2013-10-29 2015-05-01 Plansee Se 濺鍍靶及製造彼之方法
TW201715054A (zh) * 2015-10-01 2017-05-01 Hitachi Metals Ltd 電子零件用積層配線膜及被覆層形成用濺鍍靶材

Also Published As

Publication number Publication date
JP2019065383A (ja) 2019-04-25
CN109207941B (zh) 2020-09-29
KR102161580B1 (ko) 2020-10-05
KR20190005120A (ko) 2019-01-15
CN109207941A (zh) 2019-01-15
JP7110749B2 (ja) 2022-08-02
TW201907023A (zh) 2019-02-16

Similar Documents

Publication Publication Date Title
JP6381142B2 (ja) タッチスクリーン装置
JP6276327B2 (ja) モリブデンを含有した標的
JP2013535571A5 (ja) モリブデンを含有したターゲット
JP2011523978A (ja) モリブデン−ニオブ合金、かかる合金を含有するスパッタリングターゲット、かかるターゲットの製造方法、それから製造される薄膜、およびその使用
TWI550117B (zh) 濺鍍靶及濺鍍靶之製造方法
JP6037211B2 (ja) MoTiターゲット材の製造方法
JP3967067B2 (ja) スパッタリングターゲット
TWI674325B (zh) MoNb靶材
JP2004217990A (ja) スパッタリングターゲットとその製造方法
JP5988140B2 (ja) MoTiターゲット材の製造方法およびMoTiターゲット材
CN106460160B (zh) W-Ti溅射靶
JP2020158880A (ja) Mo合金ターゲット材およびその製造方法
JP2000129432A (ja) 導電性金属酸化物焼結体およびその用途
JP4905618B2 (ja) 配線形成用材料、配線形成用スパッタリングターゲット、配線薄膜及び電子部品
JP2019002064A (ja) MoWターゲット材
TWI715467B (zh) 鉬合金靶材及其製造方法
JP2000185968A (ja) 導電性金属酸化物焼結体およびその用途
TW200940447A (en) Sintered silicon wafer
JP6310088B2 (ja) タングステンスパッタリングターゲット及びその製造方法
WO2000031316A1 (fr) CIBLE POUR PULVERISATION CATHODIQUE EN ALLIAGE Co-Ti ET PROCEDE DE FABRICATION CORRESPONDANT
JP2022028300A (ja) スパッタリングターゲット
JP2011058078A (ja) スパッタリングターゲットとそれを用いたTa−W合金膜および液晶表示装置