TWI667501B - 光波分離結構與形成光波分離結構的方法 - Google Patents
光波分離結構與形成光波分離結構的方法 Download PDFInfo
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- TWI667501B TWI667501B TW104109544A TW104109544A TWI667501B TW I667501 B TWI667501 B TW I667501B TW 104109544 A TW104109544 A TW 104109544A TW 104109544 A TW104109544 A TW 104109544A TW I667501 B TWI667501 B TW I667501B
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- layer
- substrate
- thickness
- refractive index
- vapor deposition
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- 238000000034 method Methods 0.000 title claims abstract description 83
- 238000000926 separation method Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 43
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 239000003989 dielectric material Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- 239000010955 niobium Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 5
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 239000007769 metal material Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 88
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 238000009826 distribution Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 18
- 229910052786 argon Inorganic materials 0.000 description 9
- 230000015654 memory Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 239000013077 target material Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000011068 loading method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- -1 silicon (Si) Chemical class 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 208000000659 Autoimmune lymphoproliferative syndrome Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229940082150 encore Drugs 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
- G02B27/1013—Beam splitting or combining systems for splitting or combining different wavelengths for colour or multispectral image sensors, e.g. splitting an image into monochromatic image components on respective sensors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0676—Oxynitrides
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
- Optical Filters (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461978803P | 2014-04-11 | 2014-04-11 | |
| US61/978,803 | 2014-04-11 | ||
| US14/291,712 US9746678B2 (en) | 2014-04-11 | 2014-05-30 | Light wave separation lattices and methods of forming light wave separation lattices |
| US14/291,712 | 2014-05-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201602650A TW201602650A (zh) | 2016-01-16 |
| TWI667501B true TWI667501B (zh) | 2019-08-01 |
Family
ID=54264973
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104109544A TWI667501B (zh) | 2014-04-11 | 2015-03-25 | 光波分離結構與形成光波分離結構的方法 |
| TW108115185A TW201939074A (zh) | 2014-04-11 | 2015-03-25 | 光波分離結構與形成光波分離結構的方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108115185A TW201939074A (zh) | 2014-04-11 | 2015-03-25 | 光波分離結構與形成光波分離結構的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9746678B2 (enExample) |
| EP (1) | EP3129823A4 (enExample) |
| JP (1) | JP2017516914A (enExample) |
| CN (1) | CN106170730A (enExample) |
| SG (2) | SG10201809273VA (enExample) |
| TW (2) | TWI667501B (enExample) |
| WO (1) | WO2015156991A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666328B (zh) * | 2017-04-01 | 2020-05-05 | 奇景光电股份有限公司 | 影像感测器 |
| US20200003937A1 (en) * | 2018-06-29 | 2020-01-02 | Applied Materials, Inc. | Using flowable cvd to gap fill micro/nano structures for optical components |
| CN113767187A (zh) * | 2019-04-19 | 2021-12-07 | 应用材料公司 | 形成含金属材料的方法 |
| US20210319989A1 (en) * | 2020-04-13 | 2021-10-14 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| US12392945B2 (en) * | 2020-04-28 | 2025-08-19 | Viavi Solutions Inc. | Induced transmission filter with hydrogenated silicon, silver, and silicon dioxide |
| US11935771B2 (en) | 2021-02-17 | 2024-03-19 | Applied Materials, Inc. | Modular mainframe layout for supporting multiple semiconductor process modules or chambers |
| US11935770B2 (en) | 2021-02-17 | 2024-03-19 | Applied Materials, Inc. | Modular mainframe layout for supporting multiple semiconductor process modules or chambers |
| US12338527B2 (en) * | 2021-09-03 | 2025-06-24 | Applied Materials, Inc. | Shutter disk for physical vapor deposition (PVD) chamber |
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| US20020033330A1 (en) * | 2000-08-07 | 2002-03-21 | Demaray Richard E. | Planar optical devices and methods for their manufacture |
| US20120318664A1 (en) * | 2011-06-17 | 2012-12-20 | Applied Materials, Inc. | Pinhole-Free Dielectric Thin Film Fabrication |
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| CN103367381B (zh) * | 2013-07-15 | 2016-12-28 | 格科微电子（上海）有限公司 | 背照式图像传感器及其制作方法 |
-
2014
- 2014-05-30 US US14/291,712 patent/US9746678B2/en active Active
-
2015
- 2015-03-24 CN CN201580018587.1A patent/CN106170730A/zh active Pending
- 2015-03-24 WO PCT/US2015/022119 patent/WO2015156991A1/en not_active Ceased
- 2015-03-24 JP JP2016561631A patent/JP2017516914A/ja active Pending
- 2015-03-24 SG SG10201809273VA patent/SG10201809273VA/en unknown
- 2015-03-24 SG SG11201607119UA patent/SG11201607119UA/en unknown
- 2015-03-24 EP EP15777467.0A patent/EP3129823A4/en not_active Withdrawn
- 2015-03-25 TW TW104109544A patent/TWI667501B/zh active
- 2015-03-25 TW TW108115185A patent/TW201939074A/zh unknown
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2017
- 2017-08-28 US US15/687,827 patent/US20180011331A1/en not_active Abandoned
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| US5411794A (en) * | 1991-08-29 | 1995-05-02 | Nippon Sheet Glass Co., Ltd. | Heat-screening glass |
| US5620578A (en) * | 1994-12-08 | 1997-04-15 | Sony Corporation | Sputtering apparatus having an on board service module |
| US20010031365A1 (en) * | 1999-05-20 | 2001-10-18 | Charles Anderson | Transparent substrate with an antireflection, low-emissivity or solar-protection coating |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20180011331A1 (en) | 2018-01-11 |
| SG11201607119UA (en) | 2016-10-28 |
| TW201939074A (zh) | 2019-10-01 |
| US20150293363A1 (en) | 2015-10-15 |
| JP2017516914A (ja) | 2017-06-22 |
| TW201602650A (zh) | 2016-01-16 |
| EP3129823A1 (en) | 2017-02-15 |
| SG10201809273VA (en) | 2018-11-29 |
| US9746678B2 (en) | 2017-08-29 |
| CN106170730A (zh) | 2016-11-30 |
| WO2015156991A1 (en) | 2015-10-15 |
| EP3129823A4 (en) | 2017-11-22 |
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