TWI665148B - Substrate peeling device, and substrate peeling method - Google Patents

Abstract

Provided are a substrate peeling device and a substrate peeling method capable of peeling a resin substrate from a support.

A substrate peeling device is a substrate peeling device that peels a resin substrate having a rectangular planar shape formed on a support, and includes: at least one corner portion disposed on the resin substrate and insertable into the corner portion and the resin substrate. The insertion part of the interface; and a moving mechanism that relatively moves the insertion part and the support body in a state where the insertion part is inserted into the interface; and the resin substrate is held and supported by the insertion part with a slit formed in the interface as a base point Body peeling peeling mechanism.

Description

Substrate peeling device and method

The present invention relates to a substrate peeling device and a substrate peeling method.

In recent years, substrates for electronic devices have replaced the glass substrates and have market demands for flexible resin substrates. It is known that a manufacturing apparatus for manufacturing such a resin substrate includes a process of peeling the support substrate from the resin substrate after the resin substrate is formed on the support substrate (support) (for example, refer to Patent Document 1).

[Learning Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2004-247721

However, in conventional manufacturing equipment, The substrate is well peeled from the support. Here, it is desired to provide a new technology that can well peel the resin substrate from the support.

This invention is made in view of such a subject, and an object of this invention is to provide the board | substrate peeling apparatus and the board | substrate peeling method which can peel a resin substrate favorably from a support body.

In order to achieve the above object, a substrate peeling device according to a first aspect of the present invention is a substrate peeling device for peeling a rectangular resin substrate having a rectangular planar shape formed on a support, and includes: The corner portion can be inserted into the interface between the resin substrate and the support body located in the corner portion; and the relative movement of the insertion portion and the support body in a state where the insertion portion has been inserted into the interface. A peeling mechanism that holds the resin substrate and peels the resin substrate from the support by using a slit formed at the interface by the insertion portion as a base point.

According to the configuration of this aspect, the resin substrate can be easily and reliably peeled from the support body by using the insertion portion with a slit formed at the interface as a base point.

Further, in the above-mentioned substrate peeling device, it is preferable that the insertion portion is constituted by a cutter. The aforementioned cutter is preferably constituted by a flat edge or a round edge.

With this configuration, the slit can be formed easily and reliably.

In the above substrate peeling device, the insertion portion is It is preferable that each of the four coils is arranged at a corner of the resin substrate.

With this configuration, slits can be formed on the four sides of the resin substrate. Therefore, the peeling operation of the resin substrate can be easily performed using this slit as a base point.

In the above-mentioned substrate peeling device, it is preferable that the cutters are corner portions of a pair which are respectively arranged on diagonal lines of the resin substrate.

With this configuration, slits can be formed in a pair of corner portions of the resin substrate. Therefore, the peeling operation of the resin substrate can be easily performed using this slit as a base point.

Further, the substrate peeling device further includes: a surface provided on an outer peripheral portion of the support, having a surface having the same height as a surface of the support where the resin substrate is formed, and guiding the insertion operation of the insertion portion. The guide member is preferred.

With this configuration, even when the support body and the resin substrate are approximately the same size when viewed from a plane, the insertion operation of the insertion portion is guided along the guide member, so that the slit can be formed well. .

Further, in the substrate peeling device, it is preferable that the moving mechanism moves the insertion portion along an outer periphery of the resin substrate.

According to this structure, a slit can be formed along the outer periphery of a resin substrate. Therefore, the peeling operation can be performed favorably.

In the above-mentioned substrate peeling device, the resin substrate is preferably a polyimide substrate.

According to the present invention, it can be optimally used as an electronic device. The polyimide substrate is well peeled from the support.

Further, in the substrate peeling device, it is preferable that the support is a glass substrate provided with a pretreatment layer composed of a silane coupling agent on a surface on which the resin substrate is to be formed in advance.

According to this configuration, since the hydroxyl groups on the surface of the support are silanized by the pretreatment, for example, when the resin substrate is made of polyimide, it is possible to prevent the resin substrate from forming a common bond with the surface of the support. In addition, since a silane group derived from a silane coupling agent is formed, the releasability of the resin substrate can be improved.

A substrate peeling method according to a second aspect of the present invention is a substrate peeling method for peeling a resin substrate having a rectangular planar shape formed on a support, and includes inserting at least one corner portion of the resin substrate. An insertion step of inserting the interface between the resin substrate and the support body located in the corner portion; and a moving step of relatively moving the insertion portion and the support body in a state where the insertion portion has been inserted into the interface; And a peeling step of peeling the resin substrate from the support using a slit formed at the interface by the insertion portion as a base point.

According to the substrate peeling method of this aspect, the resin substrate can be easily and reliably peeled from the support body by using the insertion portion with a slit formed at the interface as a base point.

Moreover, in the above-mentioned substrate peeling method, it is preferable that the inserting portion uses a flat blade or a round blade.

With this configuration, the slit can be formed easily and reliably.

In the above substrate peeling method, in the aforementioned insertion step, Among them, it is preferable that the insertion portion disposed at a corner portion of the four corners of the resin substrate is inserted into an interface between the corner portion and the resin substrate.

With this configuration, slits can be formed on the four sides of the resin substrate. Therefore, the peeling operation of the resin substrate can be easily performed using this slit as a base point.

Further, in the substrate peeling method, in the inserting step, it is preferable that the inserting portions of a pair of corner portions respectively disposed on a diagonal line of the resin substrate are inserted at an interface between the corner portion and the resin substrate. .

With this configuration, slits can be formed in a pair of corner portions of the resin substrate. Therefore, the peeling operation of the resin substrate can be easily performed using this slit as a base point.

In the substrate peeling method, in the inserting step, a guide member is used to guide the inserting action of the inserting portion; the guide member is provided on an outer peripheral portion of the support and has A surface having the same height as the surface on which the resin substrate is formed is preferable.

With this configuration, even when the support body and the resin substrate are approximately the same size when viewed from a plane, the insertion operation of the insertion portion is guided along the guide member, so that the slit can be formed well. .

Further, in the substrate peeling method, in the moving step, the insertion portion is preferably moved along an outer periphery of the resin substrate.

According to this structure, a slit can be formed along the outer periphery of a resin substrate. Therefore, the peeling operation can be performed favorably.

In the above substrate peeling method, the resin substrate is Polyimide substrates are preferred.

According to the present invention, the polyimide substrate can be optimally peeled from the support for electronic device applications.

Further, in the substrate peeling method, the support is preferably a glass substrate in which a pretreatment layer composed of a silane coupling agent is provided on a surface on which the resin substrate is to be formed in advance.

According to this configuration, since the hydroxyl groups on the surface of the support are silanized by the pretreatment, for example, when the resin substrate is made of polyimide, it is possible to prevent the resin substrate from forming a common bond with the surface of the support. In addition, since a silane group derived from a silane coupling agent is formed, the releasability of the resin substrate can be improved.

According to the present invention, the resin substrate can be easily and reliably peeled from the support.

S‧‧‧Slit

1‧‧‧ support substrate (support body)

1a‧‧‧ surface

2‧‧‧ treatment film

3‧‧‧ resin substrate

3a‧‧‧solution

3A, 3B, 3C, 3D ‧‧‧ Corner

10‧‧‧ laminated body

20, 120‧‧‧ Insertion section

21‧‧‧ mobile agency

22‧‧‧ stripping agency

30‧‧‧The first insertion part

30A, 31A, 32A, 33A, 34A‧‧‧

30B, 31B, 32B, 33B ‧‧‧ Launch Department

31‧‧‧ 2nd insertion section

32‧‧‧ 3rd insertion section

33‧‧‧ 4th insertion section

40‧‧‧holding department

80‧‧‧Guide members

80a‧‧‧Guide plane

100, 200‧‧‧ substrate peeling device

121‧‧‧ Mobile Agency

123‧‧‧rotating mechanism

130‧‧‧The first insertion part

130A‧‧‧Tool

130B‧‧‧ Launch Department

132‧‧‧ 3rd insertion section

132A‧‧‧Tool

132B‧‧‧ Launch Department

[Fig. 1] A diagram showing a process of manufacturing a resin substrate.

[Fig. 2] A diagram showing a chemical reaction occurring during the pretreatment.

[Fig. 3] An experimental result showing the effect of improving the releasability in the treated film.

4 is a diagram showing a schematic configuration of a substrate peeling apparatus according to a first embodiment.

[FIG. 5] A flowchart showing a substrate peeling method by a substrate peeling device.

[Fig. 6] A diagram showing a substrate peeling process.

7 is a diagram showing a schematic configuration of a substrate peeling apparatus according to a second embodiment.

8 is a diagram showing a substrate peeling process according to a second embodiment.

[FIG. 9] A diagram showing a configuration of a modification.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In this embodiment, a case where a resin substrate used as a substrate for an electronic device is manufactured is exemplified. In addition, the drawings used in the following description are for easy understanding of features, and for convenience of displaying enlarged feature parts, the dimensional ratios and the like of each component are not necessarily the same as the actual ones.

The method for manufacturing a resin substrate of this embodiment includes a pretreatment process in which a silane coupling agent is treated on a support substrate, a coating process in which a material for forming a resin substrate is coated on a pretreatment surface in the support substrate, And a firing process of heating the support substrate to form a resin substrate on the support substrate, and a peeling process of peeling the resin substrate from the support substrate.

(First Embodiment)

FIG. 1 is a diagram showing a manufacturing process of the resin substrate of the present embodiment.

At the beginning, as shown in Fig. 1 (a), The surface (at least one surface) 1a is a pretreatment (pretreatment process) for treating a silane coupling agent. In this embodiment, the support substrate 1 is made of glass.

In the pre-treatment, a treatment liquid is applied to the surface 1 a of the support substrate (support) 1. Here, coating includes spraying the author.

The pre-processing time is preferably 1 to 60 seconds. Alternatively, instead of applying the treatment liquid, the support substrate 1 may be subjected to a treatment with a silane coupling agent by a vapor deposition method. The processing time by the vapor deposition method is, for example, preferably performed in an oven at 80 ° C. to 120 ° C. for 1 to 15 minutes.

In this embodiment, the treatment liquid used in the pretreatment is one containing a silane coupling agent (hereinafter, also referred to as a "silylating agent") and a solvent. Hereinafter, each component is demonstrated in detail.

(Silylating agent)

The silylating agent is not particularly limited, and any conventionally known silylating agent can be used. Specifically, for example, a silylating agent represented by the following formulae (1) to (3) can be used. In this specification, an alkyl group has 1 to 5 carbons, a cycloalkyl group has 5 to 10 carbons, an alkoxy group has 1 to 5 carbons, and a heterocycloalkyl group has 5 to 10 carbons.

(In formula (1), R ¹ shows a hydrogen atom, or a saturated or unsaturated alkyl group, and R ² shows a saturated or unsaturated alkyl group, a saturated or unsaturated cycloalkyl group, or a saturated or unsaturated alkyl group. Unsaturated heterocycloalkyl. R ¹ and R ² are bonded to each other to form a saturated or unsaturated heterocycloalkyl with a nitrogen atom.

(In formula (2), R ³ is a hydrogen atom, a methyl group, a trimethylsilyl group, or a dimethylsilyl group, and R ⁴ and R ⁵ are each independently a hydrogen atom, an alkyl group, or ethylene. base)

(In formula (3), X is O, CHR ⁷ , CHOR ⁷ , CR ⁷ R ^7, or NR ⁸ , and R ⁶ and R ⁷ each independently show a hydrogen atom, saturated or unsaturated alkyl, and saturated Is unsaturated cycloalkyl, trialkylsilyl, trialkylsilyl, alkoxy, phenyl, phenethyl, or ethenyl, and R8 shows a hydrogen atom, alkyl, or (Trialkylsilyl)

Examples of the silylating agent represented by the formula (1) include N, N-dimethylaminotrimethylsilane, N, N-diethylaminotrimethylsilane, t-butylaminotrimethylsilane, allyltrimethylsilane, trimethylacetamide, trimethylpiperidine, trimethylsilyl imidazole, trimethylsilylmorpholine, 3-trimethylsilyl Methylsilane-2-oxazolidinone, trimethyltriazole, trimethylpyrrolidine, 2-trimethylsilane-1,2,3-triazole, 1-trimethylsilane-1,2, 4-triazole and the like.

Examples of the silylating agent represented by the above formula (2) include hexamethyldisilazane, N-hexamethyldisilaxane methyl ester, 1,2-di-N-octyltetramethyl, 1,2-divinyltetramethyldisilazane, heptamethyldisilazane, nonamethyltrisilamine, tris (dimethylsilane) amine and the like.

The silylating agent represented by the formula (3) includes trimethylsilaneacetic acid, trimethylsilane propionate, butyltrimethylsilane, and trimethylsilylhydroxy-3-penten-2-one.

The content of the silylating agent in the surface treatment liquid is preferably 0.1 to 50% by mass, more preferably 0.5 to 30% by mass, and even more preferably 1.0 to 20% by mass. With the above range, the coating property of the surface treatment liquid can be ensured, and the hydrophobicity of the patterned surface can be sufficiently improved.

(Solvent)

The solvent is a solvent capable of dissolving the silylating agent, and there is no particular limitation on the resin pattern to be surface-treated or the pattern to be etched is not particularly limited, and conventionally known solvents can be used.

Specific examples include fluorenes such as dimethylarsine; fluorenes such as dimethylarsine, diethylarsine, bis (2-hydroxyethyl) fluorene, butanes; N, N-dimethylformal Amines, N-methylformamide, N, N-dimethylacetamide, N-methylacetamide, N, N-diethylacetamide, and other amines; N-methyl -2-pyrrolidine Ketones, N-ethyl-2-pyrrolidone, N-propyl-2-pyrrolidone, N-hydroxymethyl-2-pyrrolidone, N-hydroxyethyl-2-pyrrolidone, etc. Dimethyl-2-imidazolidinone, 1,3-diethyl-2-imidazolidinone, 1,3-diisopropyl-2-imidazolinone and other imidazolinones; dimethyl ether, ether, Dialkyl ethers such as methyl ethyl ether, dipropyl ether, diisopropyl ether, and dibutyl ether; dimethyl glycol, dimethyl diethylene glycol, dimethyl triethylene glycol, methyl Dialkyl glycol ethers such as ethyl diethylene glycol, diethylene glycol; ketones such as methyl ethyl ketone, cyclohexanone, 2-heptanone, 3-heptanone; p-menthane, di Terpenes such as phenylalkane, limonene, terpinene, pinane, norbornene, pinane and the like.

Through the pretreatment described above, as shown in FIG. 1 (b), the treatment film 2 derived from the silane coupling agent (silanizing agent) on the surface 1a of the support substrate 1 is formed on the entire surface 1a.

Here, it is explained that a chemical reaction occurs between the processing film 2 and the surface 1 a of the support substrate 1 during the pre-processing. FIG. 2 is a diagram showing a chemical reaction between the processing film 2 and the surface 1 a of the support substrate 1 during the pre-processing. In the following description, an example of a silylating agent (HMDS (hexamethyldisilaxane)) represented by the above formula (2) is exemplified.

The support substrate 1 made of glass has an OH group (hydroxyl group) on the surface 1 a. Therefore, if the pretreatment by a silane coupling agent is performed, HMDS will decompose and combine into two hydroxyl groups, and ammonia (NH ₃ ) will be generated. As a result, the support substrate 1 is formed by silanizing OH groups (hydroxyl groups) on the surface 1a, and a treatment film 2 containing a silyl group derived from a silylating agent is formed on the surface 1a as shown in FIG. 2. Therefore, the support substrate 1 is in a state in which the OH group (hydroxyl group) does not exist or a state in which it does not exist by forming the treatment film 2 (silyl group) on the surface 1a.

Next, as shown in FIG. 1 (c), a solution 3a containing a polyamic acid as a material for forming a resin substrate is applied on the treatment film 2 which is a treatment surface to which the treatment produced by the pretreatment process is applied. . In this embodiment, for example, a method of forming the solution 3a by an inkjet method on the processing film 2 is selected. Therefore, as described later, the resin substrate 3 on the support substrate 1 can be made smaller in size than the support substrate 1 when viewed from a plane.

The polyamidic acid used in this example is described below.

(Polyamic acid)

In this example, the polyamic acid used for the production of a resin substrate made of polyimide is not particularly limited, and polyamidic acid known as a precursor of polyimide resin is suitable in the past. To choose.

The most suitable polyamic acid is, for example, a polyamino acid composed of a structural unit represented by the following formula (4).

(In formula (4), R ⁹ is a tetravalent organic group, R ¹⁰ is a divalent organic group, and n is a repeating number of a constituent unit represented by formula (1))

In the formula (4), R ⁹ is a tetravalent organic group, and R ¹⁰ is a divalent organic group. Those carbon numbers are preferably 2 to 50, and more preferably 2 to 30. R ¹ and R ^{2 may} each be an aliphatic group or an aromatic group, or a combination of these structures. R ⁹ and R ^{10 may} include a halogen atom, an oxygen atom, and a sulfur atom in addition to the carbon atom and the hydrogen atom. When R ⁹ and R ¹⁰ include an oxygen atom, a nitrogen atom, or a sulfur atom, the oxygen atom, nitrogen atom, or sulfur atom serves as a nitrogen-containing compound ring group, -CONH-, -NH-, -N = N-, -CH = N-, -COO-, -O-, -CO-, -SO-, -SO _2- , -S-, and -SS- selected groups are included in R ⁹ and R ¹⁰ may be included in R ⁹ and R ¹⁰ as a group selected from -O-, -CO-, -SO-, -SO _2- , -S-, and -SS-.

A polyimide resin composed of a structural unit represented by the following formula (5) can be obtained by heating a polyamic acid composed of a structural unit represented by the formula (4).

(In the formula (5), R ¹ and R ² are synonymous with the formula (4), and n is a repeating number of a constituent unit represented by the formula (5)).

In the following, tetramethylcarboxylic acid dianhydrous components, diamine components, and N, N, N ', N'-tetramethyluria used for the preparation of polyamic acid are described. And a method for producing polyamic acid.

(Tetraformic acid dianhydride component)

The tetramethylcarboxylic acid dianhydride component which is a synthetic raw material of polyamic acid is not particularly limited as long as it can form a polyamino acid by reacting with a diamine component. The tetraformic acid dianhydride component can be appropriately selected from tetraformic acid dianhydride which has been conventionally used as a synthetic raw material of polyamic acid. The tetramethylcarboxylic acid dianhydrous component may be an aromatic tetramethylcarboxylic acid dianhydride or an aliphatic tetramethylcarboxylic acid dianhydride, but from the point of heat resistance of the obtainable polyimide resin, the aromatic Group tetraformic acid dianhydrides are preferred. The tetraformic acid dianhydride component may be used in combination of two or more kinds.

The best specific examples of the aromatic tetramethanecarboxylic acid dianhydrous are exemplified by pyromellitic acid dianhydride, 3,3 ', 4,4'-biphenyltetracarboxylic acid dianhydride, 2, 3,3 ', 4'-biphenyltetracarboxylic acid dihydrate, 3,3', 4,4'-benzophenonetetracarboxylic acid dihydrate, 4,4'-phthalic acid Anhydrous, and 3,3 ', 4,4'-diphenylarsinetetracarboxylic acid dianhydrous. Among these, 3,3 ', 4,4'-biphenyltetracarboxylic acid dianhydrous and pyromellitic acid dianhydride are preferred from the viewpoint of price and availability.

(Diamine component)

The diamine component used as a synthetic raw material of a polyamic acid is not specifically limited if it can form a polyamic acid by reaction with a tetraformic acid dianhydride component. The diamine component can be appropriately selected from the diamines conventionally used as a synthetic raw material of polyamic acid. Diamine component, is aromatic diamine, or lipid Aliphatic diamines are also possible, but aromatic diamines are preferred from the viewpoint of the heat resistance of the available polyimide resins. The diamine component may be used in combination of two or more kinds.

Specific examples of the aromatic diamine include p-phenylenediamine, m-phenylenediamine, 2,4-diaminotoluene, 4,4'-diaminobiphenyl, and 4,4 ' -Diamino-2,2'-bis (trifluorosilylmethyl) biphenyl, 3,3'-diaminodiphenylhydrazone, 4,4'-diaminodiphenylhydrazone, 4,4'-aminodiphenyl Sulfide, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 1 1,4-bis (4-aminophenoxy) benzene, 1,3-bis (4-aminophenoxy) benzene, 1,3-bis (3-aminophenoxy) benzene, 4,4'-bis (4-aminophenoxy) biphenyl, bis [4- (4-aminophenoxy) benzene] fluorene, bis [4- (3-aminophenoxy) benzene] fluorene, 2,2-bis [4 -(4-aminophenoxy) benzene] propane, and 2,2-bis [4- (4-aminophenoxy) benzene] hexafluoropropane and the like. Among these, p-phenylenediamine, m-phenylenediamine, 2,4-diaminotoluene, and 4,4'-diaminodiphenyl ether are preferred in terms of price, availability, and the like.

(N, N, N ’, N’-tetramethylurea)

The tetraformic acid dianhydrous component and the diamine component were synthesized using N, N, N ', N'-tetramethylurea as a solvent. When N, N, N ', N'-tetramethyl urea is used as a solvent to generate a polyimide resin by heating, a polyimide resin having excellent elongation and heat resistance is easily obtained.

(Synthesis of Polyamic Acid)

The tetramethylcarboxylic acid dianhydrous component and the diamine component described above were reacted using N, N, N ', N'-tetramethylurea as a solvent to synthesize a polyamic acid. When synthesizing polyamic acid, although the amount of tetramethanecarboxylic acid dianhydrous component and diamine component used is not particularly limited, the tetraamine dianhydrous component is 1 mole, and the diamine component is 0.50 to 1.50 Mol is better, 0.60 ~ 1.30 Mor is better, 0.70 ~ 1.20 Morte is better.

The amount of N, N, N ', N'-tetramethylurea used is not particularly limited as long as it does not inhibit the object of the present invention. A typical amount of N, N, N ', N'-tetramethylurea is 100 parts by mass with respect to the total amount of tetramethylcarboxylic acid dianhydride component and the amount of diamine component, and becomes 100 to 4000 parts by mass. Better, 150 ~ 2000 parts by mass.

Furthermore, when synthesizing polyamic acid, the solvent used is N, N, N ', N'-tetramethylurea. However, as long as the object of the present invention is not hindered, other solvents of N, N, N ', N'-tetramethylurea may be used together with N, N, N', N'-tetramethylurea. Other solvents of N, N, N ', N'-tetramethylurea can be appropriately selected from solvents conventionally used for the synthesis of polyamic acid. Examples of other suitable solvents for N, N, N ', N'-tetramethylurea include, for example, N-methyl-2-pyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamidamine, hexamethylphosphamide, and 1,3-dimethyl-2-imidazolinone. When N, N, N ', N'-tetramethylurea is used together with other solvents of N, N, N', N'-tetramethylurea, the amount of other solvents used is The total mass of the solvent used in the synthesis of the amino acid is preferably 20% by mass or less, more preferably 10% by mass or less, and particularly preferably 5% by mass or less.

The temperature at which the tetramethylcarboxylic acid dianhydrous component and the diamine component are reacted is not particularly limited as long as the reaction proceeds well. The reaction temperature of the typical tetramethylcarboxylic acid dianhydride component and the diamine component is preferably -5 to 150 ° C, more preferably 0 to 120 ° C, and particularly preferably 0 to 70 ° C. In addition, although the reaction time of the tetramethylcarboxylic acid dianhydride component and the diamine component depends on the reaction temperature, it is typically 1 to 50 hours, more preferably 2 to 40 hours, and particularly preferably 5 to 30 hours.

A polyamic acid solution can be obtained by the method described above. The polyfluorene may be formed using a solution containing a polyfluorene imine powder.

Next, as shown in FIG. 1 (d), the support substrate 1 to which the solution 3 a is applied is heated and calcined to form a multilayer body 10 (including a polyimide resin substrate 3) on the support substrate 1 ( Calcination process).

In the firing process, for example, the supporting substrate 1 is heated to 120 ° C to 350 ° C, preferably 150 ° C to 350 ° C. By heating in such a temperature range, a good person can be manufactured by suppressing thermal degradation and thermal decomposition of the generated polyimide (resin substrate 3). In addition, when the heating of the polyamic acid is performed at a high temperature, since the consumption of a large amount of energy and the degradation of the processing equipment at high temperatures over time are promoted, the heating of the polyamic acid is lowered. The temperature is also better. Specifically, the upper limit of the temperature at which the polyamic acid is heated is preferably 250 ° C or lower, more preferably 220 ° C or lower, and particularly preferably 200 ° C or lower.

In this embodiment, the surface 1a of the support substrate 1 and the tree Between the lipid substrates 3, a processing film 2 exists. Since the silane group generated by the treatment film 2 is formed on the surface 1a, the OH group (hydroxyl group) is absent or almost absent, and the common bonding with the polyimide constituting the resin substrate 3 can be suppressed. In addition, by forming a silane group, the adhesion to the polyimide and the treatment film 2 is reduced, and the releasability of the resin substrate 3 is improved.

FIG. 3 is an experimental result showing the effect of improving the releasability in the treatment film 2. In Fig. 3, the horizontal axis shows the elapsed time (number of days elapsed) since the resin substrate was formed on the support substrate, and the vertical axis shows the adhesion strength (units) of polyimide (resin substrate) and the support substrate. : G). In FIG. 3, for comparison, a case where a support substrate that has not been treated with a silane coupling agent is used is shown as "untreated", and a case that uses a support substrate that has been treated with a silane coupling agent is used. The status is displayed as "Processed 1", "Processed 2". In addition, "treated 1" and "treated 2" are different from the silane coupling agent used for processing. In "treatment 1", a silane coupling agent OAP (manufactured by Tokyo Chemical Industry Co., Ltd.) is used. In Treatment 2 ", a silane coupling agent OSRA (manufactured by Tokyo Chemical Industry Co., Ltd.) was used.

As shown in FIG. 3, once the resin substrate is formed on either the case where the treatment with the silane coupling agent has been performed (treatments 1, 2) or the case where it has not been performed (untreatment), The adhesion strength decreases with time on the support substrate. If the number of elapsed days exceeds 3 days, the adhesion strength is not much different from the case where the treatment with the silane coupling agent has been performed or not performed. The reason for this is that the polyimide constituting the resin substrate is caused to adsorb moisture by the passage of time. The adhesion strength at the interface of the support substrate is reduced.

Usually, after the resin substrate is formed, peeling from the support substrate is performed. Therefore, when the elapsed time is short, it is important to reduce the adhesion strength.

From Fig. 3, it can be confirmed that when the treatment with the silane coupling agent is performed (treatments 1, 2), even if the elapsed time is short, that is, even if the moisture adsorption of polyimide does not occur, it can be compared with The low adhesion force peels the resin substrate from the support substrate.

Next, on the upper surface of the resin substrate 3, an electronic device (not shown) corresponding to the application is laminated. For example, by forming a TFT element on the resin substrate 3 and further laminating or bonding the display elements, a display device such as a liquid crystal display, an organic EL display, or an electronic paper can be formed, particularly a flexible display device.

After the electronic device (not shown) is formed, as shown in FIG. 1 (e), the resin substrate 3 is peeled from the support substrate 1 (peeling process). When the resin substrate 3 is peeled from the support substrate 1, the resin substrate 3 can be well peeled from the support substrate 1 by using the substrate peeling device of this embodiment.

FIG. 4 is a diagram showing a schematic configuration of a substrate peeling apparatus 100 according to this embodiment.

As shown in FIG. 4, the substrate peeling device 100 includes an insertion portion 20, a moving mechanism 21, and a peeling mechanism 22.

The insertion portion 20 is disposed at at least one corner portion of the resin substrate 3, and is inserted into the interface between the corner portion of the resin substrate 3 and the support substrate 1. By. In this embodiment, the insertion portion 20 includes a first insertion portion 30, a second insertion portion 31, a third insertion portion 32, and a fourth insertion portion 33.

The first insertion portion 30, the second insertion portion 31, the third insertion portion 32, and the fourth insertion portion 33 correspond to the four corner portions 3A, 3B, 3C, and 3D of the resin substrate 3 having a rectangular planar shape, respectively. Configuration.

These first insertion portion 30, second insertion portion 31, third insertion portion 32, and fourth insertion portion 33 have the same configuration. In the present embodiment, the first insertion portion 30 includes a cutter 30A and a push-out portion 30B. The second insertion portion 31 includes a cutter 31A and a push-out portion 31B. The third insertion portion 32 includes a cutter 32A and a push-out portion 32B. The fourth insertion portion 33 includes a cutter 33A and a push-out portion 33B.

It is preferable that the cutters 30A, 31A, 32A, and 33A use a flat blade or a round blade. In this embodiment, the cutters 30A, 31A, 32A, and 33A use, for example, a flat blade composed of a cutting edge.

The push-out sections 30B, 31B, 32B, and 33B are, for example, constituted by actuators and the like, and can insert the interfaces of the support substrate 1 and the resin substrate 3 by pushing the cutters 30A, 31A, 32A, and 33A in a predetermined direction, respectively. .

The moving mechanism 21 is a person who relatively moves the insertion portion 20 and the support substrate 1 in a state where the insertion portion 20 (each of the cutters 30A, 31A, 32A, and 33A) is inserted into the interface between the resin substrate 3 and the support substrate 1. The moving mechanism 21 is configured by, for example, a driving device such as an actuator. The moving mechanism 21 inserts the first insertion portion 30, the second insertion portion 31, and the third insertion portion. Each of the insertion portion 32 and the fourth insertion portion 33 is independently movable along the outer periphery of the resin substrate 3, whereby a slit is formed at the interface between the resin substrate 3 and the support substrate 1.

In the present embodiment, the first insertion portion 30, the second insertion portion 31, the third insertion portion 32, and the fourth insertion portion 33 are independently moved along the outer periphery of the resin substrate 3, and are supported on the resin substrate 3 and the support. A slit is formed in the interface of the substrate 1 so as to surround the outer periphery of the resin substrate 3 in a frame shape.

The peeling mechanism 22 holds the resin substrate 3 and peels the resin substrate 3 from the support substrate 1 using the first insertion portion 30 and the second insertion portion 31 as a base point at a slit formed at the interface.

The peeling mechanism 22 includes a holding portion 40 that holds the resin substrate 3. The method for holding the resin substrate 3 in the holding section 40 is not particularly limited, and for example, an adsorption holding method for holding and holding the resin substrate 3, an adhesive method for holding and holding the resin substrate 3, and a slit for holding the resin substrate 3 may be used. A gripping method in which a part is directly held, and a winding method in which a slit portion is wound around a roller member.

Here, the substrate peeling method by the substrate peeling apparatus 100 is demonstrated based on the flowchart shown in FIG.

The substrate peeling method of this embodiment includes an inserting step S1, a moving step S2, and a peeling step S3.

In the insertion step S1, the insertion portion 20 is an interface between the corner portions 3A and 3B of the resin substrate 3 and the support substrate 1. Specifically, the first inserting portion 30, the second inserting portion 31, the third inserting portion 32, and the fourth inserting portion 33 are borrowed from each of the push-out portions 30B, 31B, 32B, and 33B. The tools 30A, 31A, 32A, and 33A are gradually pushed in from the corners 3A and 3B, and are inserted into the interface K.

In this embodiment, as shown in FIG. 4, the first insertion portion 30 is, for example, a blade surface of a cutter 30A formed of a flat blade, and the blade portion 30A is disposed at an angle of approximately 45 degrees to the corner portion 3A.

In the present embodiment, the pushing portion 30B pushes the cutter 30A in the direction perpendicular to the cutting surface, and inserts the tool 30A into the interface K of the corner portion 3A.

In the second insertion portion 31, as shown in FIG. 4, the cutting surface of the cutter 31A made of a flat blade is disposed at an angle of approximately 45 degrees to the corner portion 3B. The pushing-out portion 31B is an interface that pushes the cutter 31A in the direction perpendicular to the cutting surface and inserts the corner portion 3B.

Further, as shown in FIG. 4, in the third insertion portion 32, the cutting surface of the cutter 32A composed of a flat blade is disposed at an angle of approximately 45 degrees to the corner portion 3C. The pushing portion 32B is an interface that pushes the cutter 32A in a direction perpendicular to the cutting surface and inserts the corner portion 3C.

In the fourth insertion portion 33, as shown in FIG. 4, the blade surface of the cutter 33A made of a flat blade is arranged at an angle of approximately 45 degrees with respect to the corner portion 3D. The pushing-out portion 33B is an interface that pushes the blade 33A in the direction perpendicular to the cutting surface and inserts it into the corner 3D.

In this embodiment, the resin substrate 3 is formed smaller than the support substrate 1. Therefore, the cutters 30A, 31A, 32A, and 33A are in a state of sliding contact with the surface of the support substrate 1. Therefore, the support substrate 1 is an insertion operation that can guide the cutters 30A, 31A, 32A, and 33A into the interface of the resin substrate 3.

In the moving step S2, the moving mechanism 21 independently moves the tools 30A, 31A, 32A, and 33A inserted in the interface along the outer periphery of the resin substrate 3, as shown in FIG. The cutters 30A, 31A, 32A, and 33A can form the slits S by moving the surfaces of the support substrate 1 in a sliding contact state.

In this embodiment, in each of the corner portions 3A, 3B, 3C, and 3D, the slits S are formed so as to surround the outer periphery of the resin substrate 3 by controlling the insertion direction and the amount of insertion of the tool with high accuracy. Uniformly formed.

After the slit S is formed, the peeling step S3 is performed.

In the peeling step S3, the peeling mechanism 22 holds a portion (a slit forming portion) of the holding portion 40 where the slit S of the resin substrate 3 is formed. In this embodiment, the holding portion 40 sucks and holds the slit-forming portion.

The peeling mechanism 22 gradually peels the resin substrate 3 from the support substrate 1 by using the insertion portion 20 with the slit S formed at the interface K as a base point.

According to this embodiment, since the processing film 2 is formed on the surface 1 a of the support substrate 1, the adhesion between the polyfluorene and the processing film 2 is reduced as described above. Therefore, using the above-mentioned slit S as a starting point, the resin substrate 3 on which the electronic device is formed can be easily and reliably peeled from the support substrate 1.

Therefore, it is possible to easily peel from the support substrate 1 without damaging the resin substrate 3 at the time of peeling.

(Second Embodiment)

Next, a second embodiment of the present invention will be described.

The difference between this embodiment and the first embodiment is the number of the insertion portions. Therefore, in the following, the same reference numerals are given to the components and components common to the first embodiment, and detailed descriptions thereof are omitted.

FIG. 7 is a diagram showing a schematic configuration of a substrate peeling apparatus 200 according to this embodiment.

As shown in FIG. 7, the substrate peeling device 200 includes an insertion portion 120, a moving mechanism 121, a peeling mechanism 22, and a rotating mechanism 123.

As shown in FIG. 7, the insertion portion 120 of this embodiment is a first insertion portion 130 and a first insertion portion 130 including a pair of corner portions 3A and 3C respectively arranged on diagonal lines of the rectangular resin substrate 3. 3 插 部 132。 3 insertion portion 132.

The first insertion portion 130 and the third insertion portion 132 have the same structure. In this embodiment, the first insertion portion 130 includes a cutter 130A and a push-out portion 130B. The third insertion portion 132 includes a cutter 132A and an ejection portion 132B.

The moving mechanism 121 inserts the first insertion portion in the left-right direction (X direction) in FIG. 7 in a state where the first insertion portion 130 and the third insertion portion 132 are inserted into the interface between the resin substrate 3 and the support substrate 1. 130 and the third insertion portion 132 move.

The rotation mechanism 123 rotates the support substrate 1 around a rotation axis O that passes through the center of the support substrate 1 toward the paper surface penetrating direction of FIG. 6.

Next, a substrate peeling method by the substrate peeling apparatus 200 of this embodiment will be described with reference to FIG. 8.

First, the insertion portion 120 is an interface between the corner portions 3A and 3C of the resin substrate 3 and the support substrate 1. As shown in FIG. 8 (a), the first insertion portion 130 is an interface in which the cutter 130A is gradually pushed in from the corner portion 3A. On the other hand, the third insertion portion 132 is an interface in which the cutter 132A is gradually pushed in from the corner portion 3C.

The moving mechanism 121 moves the cutter 130A toward the corner portion 3B (+ X side shown in FIG. 8 (a)), and moves the cutter 132A toward the corner portion 3D side (-X shown in FIG. 8 (a)). Side) move. Thereby, two slits S can be formed along the outer periphery of the resin substrate 3.

Next, the moving mechanism 121 returns the tools 130A and 132A to the initial positions as shown in FIG. 8 (b). Thereafter, the rotation mechanism 123 rotates the support substrate 1 counterclockwise by 90 degrees with the rotation axis O as a reference. As a result, the first insertion portion 130 faces the corner portion 3B of the resin substrate 3, and the third insertion portion 132 faces the corner portion 3D of the resin substrate 3.

Next, as shown in FIG. 8 (c), the first insertion portion 130 gradually pushes the cutter 130A toward the interface K of the corner portion 3B. On the other hand, the third insertion portion 132 gradually pushes the cutter 132A toward the interface K of the corner portion 3D.

Next, the moving mechanism 121 moves the cutter 130A toward the corner portion 3C side (+ X side shown in FIG. 8 (c)), and moves the cutter 132A toward the corner portion 3A side (shown in FIG. 8 (c)). -X side) move. by Accordingly, two slits S can be formed along the outer periphery of the resin substrate 3.

As described above, the four slits S that surround the outer periphery of the resin substrate 3 can be formed.

After the slit S is formed, the peeling mechanism 22 holds a portion (the slit forming portion) of the holding portion 40 where the slit S of the resin substrate 3 is formed. The peeling mechanism 22 gradually peels the resin substrate 3 from the support substrate 1 by using the insertion portion 120 with the slit S formed in the interface K as a base point.

Although an embodiment of the present invention has been described above, it is not limited to the above, and may be appropriately changed within a range not departing from the gist of the invention. For example, in the above-mentioned embodiment, the case where the processing film 2 is formed on the entire surface 1a of the support substrate 1 is exemplified, but the present invention is not limited to this.

Moreover, in the above-mentioned embodiment, although the example of the case where the surface of the support substrate 1 was used as a guide of the insertion part 20 and 120 by forming the resin substrate 3 smaller than the support substrate 1 was illustrated, this invention is an example. Not limited to this.

For example, as shown in FIG. 9 (a), a guide member 80 disposed on the outer peripheral portion of the support substrate 1 may be used. The guide member 80 is a guide surface 80a having the same height as the surface (surface 1a) on which the resin substrate 3 in the support substrate 1 is formed.

With such a guide member 80, the sizes of the support substrate 1 and the resin substrate 3 are approximately the same when viewed from a plane, as shown in FIG. 9 (b), because the insertion actions of the insertion portions 20 and 120 are Since it is guided along the guide surface 80a of the guide member 80, a slit S can be formed in an interface favorably.

In addition, in this embodiment, the case where the support substrate 1 is rotated using the rotation mechanism 123 in order to change the insertion position of the insertion portion 120 with respect to the resin substrate 3 is exemplified, but the present invention is not limited to this. For example, the insertion portion 120 itself may be rotated 90 degrees by the rotation mechanism 123, and the movement direction of the insertion portion 120 generated by the movement mechanism 121 may be changed by 90 degrees without forming the slit S to rotate the support substrate 1. .

Claims (15)

A substrate peeling device is a substrate peeling device for peeling a rectangular resin substrate having a planar shape formed on a support. The substrate peeling device includes at least one corner portion disposed on the resin substrate, and can be inserted into the resin substrate and located on the substrate. An insertion portion of an interface of the support body in a corner portion; and a moving mechanism that relatively moves the insertion portion and the support body in a state where the insertion portion has been inserted into the interface; and the resin substrate is held by the resin substrate A peeling mechanism that peels the resin substrate from the support by using a slit formed at the interface by the insertion portion as a base point; the insertion portion is a four-piece structure disposed at a corner of the resin substrate. A substrate peeling device is a substrate peeling device for peeling a rectangular resin substrate having a planar shape formed on a support. The substrate peeling device includes at least one corner portion disposed on the resin substrate, and can be inserted into the resin substrate and located on the substrate. An insertion portion of an interface of the support body in a corner portion; and a moving mechanism that relatively moves the insertion portion and the support body in a state where the insertion portion has been inserted into the interface; and the resin substrate is held by the resin substrate A peeling mechanism that peels the resin substrate from the support by using a slit formed at the interface by the insertion portion as a base point; the insertion portion is a pair of corners respectively disposed on a diagonal line of the resin substrate unit. The substrate peeling device according to claim 1 or 2, wherein the insertion portion is constituted by a cutter. The substrate peeling device according to claim 3, wherein the cutter is composed of a flat blade or a round blade. The substrate peeling device according to claim 1 or 2, further comprising: an outer peripheral portion provided on the support, having a surface having the same height as a surface of the support on which the resin substrate is formed, and further comprising: Insert a motion-guided guide member. The substrate peeling device according to claim 1 or 2, wherein the moving mechanism moves the insertion portion along an outer periphery of the resin substrate. The substrate peeling device according to claim 1 or 2, wherein the resin substrate is a polyimide substrate. The substrate peeling device according to claim 1 or 2, wherein the support is a glass substrate provided with a pretreatment layer composed of a silane coupling agent on a surface on which the resin substrate is to be formed in advance. A substrate peeling method is a substrate peeling method for peeling a resin substrate having a rectangular planar shape formed on a support, and the method includes: inserting an insertion portion disposed at at least one corner of the resin substrate into the resin substrate; An insertion step of an interface with the support body located in the corner portion; and a moving step of relatively moving the insertion portion and the support body in a state where the insertion portion has been inserted into the interface; and by the insertion portion A slit formed at the interface serves as a base point, a peeling step of peeling the resin substrate from the support; and in the inserting step, the inserting portion arranged at a corner portion of the four corners of the resin substrate is inserted into the corner. The interface between the part and the resin substrate. A substrate peeling method is a substrate peeling method for peeling a resin substrate having a rectangular planar shape formed on a support, and the method includes: inserting an insertion portion disposed at at least one corner of the resin substrate into the resin substrate; An insertion step of an interface with the support body located in the corner portion; and a moving step of relatively moving the insertion portion and the support body in a state where the insertion portion has been inserted into the interface; and by the insertion portion And a peeling step for peeling the resin substrate from the support in the slit formed at the interface; and in the inserting step, the pair of corners of a pair of corners respectively arranged on the diagonal line of the resin substrate are disposed. The insertion portion is inserted at an interface between the corner portion and the resin substrate. In the substrate peeling method according to claim 9 or 10, wherein the insertion portion is a flat blade or a round blade. The substrate peeling method according to claim 9 or 10, wherein in the inserting step, a guide member is used to guide the inserting action of the inserting portion; the guide member is provided on an outer peripheral portion of the support and has A surface having the same height as the surface on which the resin substrate is formed in the support. The substrate peeling method according to claim 9 or 10, wherein in the moving step, the insertion portion moves along an outer periphery of the resin substrate. The substrate peeling method according to claim 9 or 10, wherein the resin substrate is a polyimide substrate. The substrate peeling method according to claim 9 or 10, wherein the support is a glass substrate provided with a pretreatment layer composed of a silane coupling agent on a surface on which the resin substrate is to be formed in advance.