TW201702167A - Substrate peeling device and substrate peeling method capable of conveniently and exactly peeling the resin substrate from the support body - Google Patents
Substrate peeling device and substrate peeling method capable of conveniently and exactly peeling the resin substrate from the support body Download PDFInfo
- Publication number
- TW201702167A TW201702167A TW105107599A TW105107599A TW201702167A TW 201702167 A TW201702167 A TW 201702167A TW 105107599 A TW105107599 A TW 105107599A TW 105107599 A TW105107599 A TW 105107599A TW 201702167 A TW201702167 A TW 201702167A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- resin substrate
- insertion portion
- peeling
- support
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract
Description
本發明,是有關於基板剝離裝置及基板剝離方法。 The present invention relates to a substrate peeling device and a substrate peeling method.
近年來,電子設備用的基板,已取代玻璃基板而具有如具有可撓性的樹脂基板的市場需要。將這種樹脂基板製造的製造裝置,已知是在支撐基板(支撐體)形成樹脂基板之後,包含將支撐基板從樹脂基板剝離的過程者(例如專利文獻1參照)。 In recent years, substrates for electronic devices have been replaced by glass substrates and have a market demand for flexible resin substrates. A manufacturing apparatus for manufacturing such a resin substrate is known as a process of forming a resin substrate after supporting a substrate (support), and includes a process of peeling the support substrate from the resin substrate (for example, refer to Patent Document 1).
[專利文獻1]日本特開2004-247721號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-247721
但是在習知技術的製造裝置中,無法將樹脂 基板從支撐體良好地剝離。在此,期望可以從支撐體將樹脂基板良好地剝離的新的技術的提供。 However, in the manufacturing apparatus of the prior art, the resin cannot be used. The substrate is well peeled off from the support. Here, it is desirable to provide a new technique in which the resin substrate can be favorably peeled off from the support.
本發明是有鑑於這種課題者,其目的是提供一種可以從支撐體將樹脂基板良好地剝離的基板剝離裝置及基板剝離方法。 The present invention has been made in view of such problems, and an object thereof is to provide a substrate peeling apparatus and a substrate peeling method which can peel a resin substrate favorably from a support.
為了達成上述目的,本發明的第1態樣的基板剝離裝置,是將形成於支撐體上的平面形狀為矩形的樹脂基板剝離的基板剝離裝置,具備:被配置於前述樹脂基板的至少1個角部,可插入前述樹脂基板之與位於前述角部中的前述支撐體的界面的插入部;及在前述插入部已插入前述界面的狀態下,使前述插入部與前述支撐體相對移動的移動機構;及將前述樹脂基板保持,並以藉由前述插入部而形成於前述界面的開縫作為基點將前述樹脂基板從前述支撐體剝離的剝離機構。 In order to achieve the above object, a substrate peeling apparatus according to a first aspect of the present invention is a substrate peeling apparatus that peels a rectangular resin substrate formed on a support, and includes at least one of the resin substrates. a corner portion into which an insertion portion of the resin substrate and an interface of the support body located at the corner portion are inserted; and a movement of the insertion portion relative to the support body in a state where the insertion portion has been inserted into the interface And a peeling mechanism that holds the resin substrate and peels the resin substrate from the support by using a slit formed in the interface by the insertion portion as a base point.
依據本態樣的構成的話,可以藉由插入部以形成於界面的開縫作為基點從支撐體將樹脂基板簡便且確實地剝離。 According to the configuration of the aspect, the resin substrate can be easily and reliably peeled off from the support by the slit formed at the interface as the base point.
且在上述基板剝離裝置中,前述插入部,是由刀具所構成較佳。前述刀具,是由平刃或是圓刃所構成較佳。 Further, in the above-described substrate peeling apparatus, the insertion portion is preferably constituted by a cutter. The aforementioned cutter is preferably constituted by a flat blade or a round blade.
依據此構成的話,可以將開縫簡便且確實地形成。 According to this configuration, the slit can be formed simply and surely.
且在上述基板剝離裝置中,前述插入部,是 各別被配置在前述樹脂基板的角部的四隅較佳。 In the above substrate peeling device, the insertion portion is It is preferable that each of them is disposed at a corner of the resin substrate.
依據此構成的話,可以將開縫形成於樹脂基板的四隅。因此,可以以此開縫作為基點將樹脂基板的剝離作業簡便地進行。 According to this configuration, the slit can be formed on the four sides of the resin substrate. Therefore, the peeling operation of the resin substrate can be easily performed by using the slit as a base point.
且在上述基板剝離裝置中,前述刀具,是各別被配置在前述樹脂基板的對角線上中的一對的角部較佳。 Further, in the above-described substrate peeling apparatus, it is preferable that the cutters are each a pair of corner portions disposed on a diagonal line of the resin substrate.
依據此構成的話,可以將開縫形成於樹脂基板的一對的角部。因此,可以以此開縫作為基點將樹脂基板的剝離作業簡便地進行。 According to this configuration, the slit can be formed in a pair of corner portions of the resin substrate. Therefore, the peeling operation of the resin substrate can be easily performed by using the slit as a base point.
且在上述基板剝離裝置中,進一步具備:設在前述支撐體的外周部,具有與前述支撐體中的形成有前述樹脂基板的面相同高度的面,並且將前述插入部的插入動作導引的導引構件較佳。 Further, the substrate peeling apparatus further includes: a surface provided on an outer peripheral portion of the support body having the same height as a surface of the support body on which the resin substrate is formed, and guiding the insertion operation of the insertion portion The guiding member is preferred.
依據此構成的話,在從平面看的狀態,即使支撐體及樹脂基板的大小是大致相同的情況,插入部的插入動作因為是沿著導引構件被導引,所以可以將開縫良好地形成。 According to this configuration, even when the size of the support body and the resin substrate are substantially the same in a state seen from the plane, the insertion operation of the insertion portion is guided along the guide member, so that the slit can be formed well. .
且在上述基板剝離裝置中,前述移動機構,是將前述插入部沿著前述樹脂基板的外周移動較佳。 Further, in the above-described substrate peeling apparatus, the moving mechanism preferably moves the insertion portion along the outer circumference of the resin substrate.
依據此構成的話,可以沿著樹脂基板的外周形成開縫。因此,可以將剝離動作良好地進行。 According to this configuration, a slit can be formed along the outer circumference of the resin substrate. Therefore, the peeling operation can be performed favorably.
且在上述基板剝離裝置中,前述樹脂基板是聚醯亞胺基板較佳。 Further, in the above substrate peeling apparatus, the resin substrate is preferably a polyimide substrate.
依據本發明的話,作為電子設備用途可以最適合地將 聚醯亞胺基板從支撐體良好地剝離。 According to the present invention, it can be most suitably used as an electronic device. The polyimide substrate is favorably peeled off from the support.
且在上述基板剝離裝置中,前述支撐體,是使用:在將形成前述樹脂基板的面預先設有由矽烷偶合劑所組成的前處理層的玻璃基板較佳。 Further, in the substrate peeling apparatus, the support is preferably a glass substrate in which a pretreatment layer composed of a decane coupling agent is provided in advance on a surface on which the resin substrate is formed.
依據此構成的話,因為藉由前處理而使支撐體表面的羥基被矽烷化,所以例如,樹脂基板是由聚醯亞胺所構成的情況,可以抑制該樹脂基板與支撐體表面形成共有結合。且,因為形成有從矽烷偶合劑衍生的矽烷基,可以提高樹脂基板的剝離性。 According to this configuration, since the hydroxyl group on the surface of the support is decanolated by the pretreatment, for example, the resin substrate is composed of polyimide, and the resin substrate can be prevented from forming a common bond with the surface of the support. Further, since the alkylene group derived from the decane coupling agent is formed, the peeling property of the resin substrate can be improved.
本發明的第2態樣的基板剝離方法,是將形成於支撐體上的平面形狀為矩形的樹脂基板剝離的基板剝離方法,具備:將被配置於前述樹脂基板的至少1個角部的插入部,插入前述樹脂基板之與位於前述角部中的前述支撐體的界面的插入步驟;及在前述插入部已插入前述界面的狀態下,使前述插入部與前述支撐體相對移動的移動步驟;及以藉由前述插入部而形成於前述界面的開縫作為基點,將前述樹脂基板從前述支撐體剝離的剝離步驟。 The substrate peeling method according to the second aspect of the present invention is a substrate peeling method in which a resin substrate having a rectangular planar shape formed on a support is peeled off, and includes an insertion of at least one corner portion of the resin substrate. a step of inserting the interface between the resin substrate and the support located in the corner portion; and a moving step of moving the insertion portion relative to the support in a state where the insertion portion has been inserted into the interface; And a peeling step of peeling the resin substrate from the support by using a slit formed in the interface by the insertion portion as a base point.
依據本態樣的基板剝離方法的話,可以藉由插入部以形成於界面的開縫作為基點從支撐體將樹脂基板簡便且確實地剝離。 According to the substrate peeling method of the present aspect, the resin substrate can be easily and reliably peeled off from the support by the slit formed at the interface as the base point.
且在上述基板剝離方法中,前述插入部,是使用平刃或是圓刃較佳。 Further, in the above-described substrate peeling method, it is preferable that the insertion portion is a flat blade or a round blade.
依據此構成的話,可以將開縫簡便且確實地形成。 According to this configuration, the slit can be formed simply and surely.
且在上述基板剝離方法中,在前述插入步驟 中,將被配置於前述樹脂基板的四隅的角部的前述插入部插入於前述角部與前述樹脂基板的界面較佳。 And in the above substrate peeling method, in the aforementioned insertion step In the above, the insertion portion disposed at the corner portion of the four corners of the resin substrate is preferably inserted into the interface between the corner portion and the resin substrate.
依據此構成的話,可以將開縫形成於樹脂基板的四隅。因此,可以以此開縫作為基點將樹脂基板的剝離作業簡便地進行。 According to this configuration, the slit can be formed on the four sides of the resin substrate. Therefore, the peeling operation of the resin substrate can be easily performed by using the slit as a base point.
且在上述基板剝離方法中,在前述插入步驟中,將各別被配置在前述樹脂基板的對角線上的一對的角部的前述插入部插入於前述角部與前述樹脂基板的界面較佳。 Further, in the above-described substrate peeling method, in the inserting step, it is preferable that the insertion portion of each of the pair of corner portions disposed on the diagonal of the resin substrate is inserted into the interface between the corner portion and the resin substrate. .
依據此構成的話,可以將開縫形成於樹脂基板的一對的角部。因此,可以以此開縫作為基點將樹脂基板的剝離作業簡便地進行。 According to this configuration, the slit can be formed in a pair of corner portions of the resin substrate. Therefore, the peeling operation of the resin substrate can be easily performed by using the slit as a base point.
且在上述基板剝離方法中,在前述插入步驟中,使用導引構件來導引前述插入部的插入動作;該導引構件,是設在前述支撐體的外周部,並具有與前述支撐體中的形成有前述樹脂基板的面相同高度的面較佳。 Further, in the above-described substrate peeling method, in the inserting step, the insertion member is used to guide the insertion operation of the insertion portion; the guiding member is provided on the outer peripheral portion of the support body and has the same as the support body It is preferable to form a surface having the same height as the surface of the resin substrate.
依據此構成的話,在從平面看的狀態,即使支撐體及樹脂基板的大小是大致相同的情況,插入部的插入動作因為是沿著導引構件被導引,所以可以將開縫良好地形成。 According to this configuration, even when the size of the support body and the resin substrate are substantially the same in a state seen from the plane, the insertion operation of the insertion portion is guided along the guide member, so that the slit can be formed well. .
且在上述基板剝離方法中,在前述移動步驟中,前述插入部是沿著前述樹脂基板的外周移動較佳。 Further, in the above-described substrate peeling method, in the moving step, the insertion portion is preferably moved along the outer circumference of the resin substrate.
依據此構成的話,可以沿著樹脂基板的外周形成開縫。因此,可以將剝離動作良好地進行。 According to this configuration, a slit can be formed along the outer circumference of the resin substrate. Therefore, the peeling operation can be performed favorably.
且在上述基板剝離方法中,前述樹脂基板是 聚醯亞胺基板較佳。 In the above substrate peeling method, the resin substrate is The polyimide substrate is preferred.
依據本發明的話,作為電子設備用途可以最適合地將聚醯亞胺基板從支撐體良好地剝離。 According to the present invention, the polyimide substrate can be favorably peeled off from the support as the electronic device.
且在上述基板剝離方法中,前述支撐體,是使用:在將形成前述樹脂基板的面預先設有由矽烷偶合劑所組成的前處理層的玻璃基板較佳。 Further, in the above-described substrate peeling method, the support is preferably a glass substrate in which a pretreatment layer composed of a decane coupling agent is provided in advance on a surface on which the resin substrate is formed.
依據此構成的話,因為藉由前處理而使支撐體表面的羥基被矽烷化,所以例如,樹脂基板是由聚醯亞胺所構成的情況,可以抑制該樹脂基板與支撐體表面形成共有結合。且,因為形成有從矽烷偶合劑衍生的矽烷基,可以提高樹脂基板的剝離性。 According to this configuration, since the hydroxyl group on the surface of the support is decanolated by the pretreatment, for example, the resin substrate is composed of polyimide, and the resin substrate can be prevented from forming a common bond with the surface of the support. Further, since the alkylene group derived from the decane coupling agent is formed, the peeling property of the resin substrate can be improved.
依據本發明的話,可以從支撐體將樹脂基板簡便且確實地剝離。 According to the present invention, the resin substrate can be easily and reliably peeled off from the support.
S‧‧‧開縫 S‧‧‧ slitting
1‧‧‧支撐基板(支撐體) 1‧‧‧Support substrate (support)
1a‧‧‧表面 1a‧‧‧ surface
2‧‧‧處理膜 2‧‧‧Processing film
3‧‧‧樹脂基板 3‧‧‧Resin substrate
3a‧‧‧溶液 3a‧‧‧solution
3A、3B、3C、3D‧‧‧角部 3A, 3B, 3C, 3D‧‧‧ corner
10‧‧‧積層體 10‧‧‧Layer
20、120‧‧‧插入部 20, 120‧‧‧ Insertion Department
21‧‧‧移動機構 21‧‧‧Mobile agencies
22‧‧‧剝離機構 22‧‧‧Disbonding agency
30‧‧‧第1插入部 30‧‧‧1st insertion
30A、31A、32A、33A、34A‧‧‧刀具 30A, 31A, 32A, 33A, 34A‧‧‧Tools
30B、31B、32B、33B‧‧‧推出部 30B, 31B, 32B, 33B‧‧‧ Launch Department
31‧‧‧第2插入部 31‧‧‧2nd insertion
32‧‧‧第3插入部 32‧‧‧3rd Insertion
33‧‧‧第4插入部 33‧‧‧4th insertion
40‧‧‧保持部 40‧‧‧ Keeping Department
80‧‧‧導引構件 80‧‧‧Guide members
80a‧‧‧導引面 80a‧‧‧ guiding surface
100、200‧‧‧基板剝離裝置 100,200‧‧‧Substrate stripping device
121‧‧‧移動機構 121‧‧‧Mobile agencies
123‧‧‧旋轉機構 123‧‧‧Rotating mechanism
130‧‧‧第1插入部 130‧‧‧1st insertion
130A‧‧‧刀具 130A‧‧‧Tools
130B‧‧‧推出部 130B‧‧‧Exporting Department
132‧‧‧第3插入部 132‧‧‧3rd insertion
132A‧‧‧刀具 132A‧‧‧Tools
132B‧‧‧推出部 132B‧‧‧Exporting Department
[第1圖]顯示樹脂基板的製造的過程圖。 [Fig. 1] A process diagram showing the manufacture of a resin substrate.
[第2圖]顯示在前處理過程發生的化學反應的圖。 [Fig. 2] A diagram showing the chemical reaction occurring in the pretreatment process.
[第3圖]顯示處理膜中的剝離性提高的效果的實驗結果。 [Fig. 3] An experimental result showing an effect of improving the peeling property in the treated film.
[第4圖]顯示第1實施例的基板剝離裝置的概略構成的圖。 [Fig. 4] A view showing a schematic configuration of a substrate peeling apparatus of the first embodiment.
[第5圖]顯示由基板剝離裝置所進行的基板剝離方法的流程圖。 [Fig. 5] A flow chart showing a method of peeling off a substrate by a substrate peeling device.
[第6圖]顯示基板剝離過程的圖。 [Fig. 6] A view showing a substrate peeling process.
[第7圖]顯示第2實施例的基板剝離裝置的概略構成的圖。 [Fig. 7] A view showing a schematic configuration of a substrate peeling apparatus of a second embodiment.
[第8圖]顯示第2實施例的基板剝離過程的圖。 [Fig. 8] A view showing a substrate peeling process of the second embodiment.
[第9圖]顯示變形例的構成的圖。 [Fig. 9] A diagram showing the configuration of a modification.
以下,一邊參照圖面一邊說明本發明的一實施例。在本實施例中,舉例將作為電子設備用的基板使用的樹脂基板製造的情況的例說明。又,在以下的說明所使用的圖面,是為了容易了解特徵,為了方便具有擴大特徵部分顯示的情況,各構成要素的尺寸比率等不一定與實際相同。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the present embodiment, an example of a case where a resin substrate used as a substrate for an electronic device is manufactured will be described as an example. In addition, in the drawings used in the following description, in order to facilitate the understanding of the features, in order to facilitate the display of the enlarged feature portions, the dimensional ratios and the like of the respective constituent elements are not necessarily the same as the actual ones.
本實施例的樹脂基板的製造方法,是具備:在支撐基板上將矽烷偶合劑處理的前處理過程、及在支撐基板中的前處理面將樹脂基板形成用的材料塗佈的塗佈過程、及將支撐基板加熱而在支撐基板上形成樹脂基板的煅燒過程、及從支撐基板將樹脂基板剝離的剝離過程。 The method for producing a resin substrate of the present embodiment includes a pretreatment process of treating a decane coupling agent on a support substrate, and a coating process of applying a material for forming a resin substrate on a pretreatment surface in the support substrate, And a baking process of heating the support substrate to form a resin substrate on the support substrate, and a peeling process of peeling the resin substrate from the support substrate.
第1圖是顯示本實施例的樹脂基板的製造過程的圖。 Fig. 1 is a view showing a manufacturing process of the resin substrate of the present embodiment.
在開始,如第1圖(a)所示,進行在支撐基板1的 表面(至少一方的面)1a將矽烷偶合劑處理的前處理(前處理過程)。在本實施例中,支撐基板1是由玻璃所構成。 At the beginning, as shown in FIG. 1(a), the support substrate 1 is performed. The surface (at least one of the faces) 1a is a pretreatment (pretreatment process) in which the decane coupling agent is treated. In the present embodiment, the support substrate 1 is made of glass.
在前處理中,藉由將處理液塗佈在支撐基板(支撐體)1的表面1a。在此,塗佈,包含噴吹附著者。 In the pretreatment, the treatment liquid is applied to the surface 1a of the support substrate (support) 1. Here, the coating includes a spray attachment.
前處理的處理時間,是1~60秒較佳。又,可取代將處理液塗佈,而藉由蒸鍍法在支撐基板1進行由矽烷偶合劑所進行的處理也可以。由蒸鍍法所產生的處理時間,是例如,在80℃~120℃的烤箱內進行1~15分鐘較佳。 The processing time of the pre-processing is preferably 1 to 60 seconds. Further, instead of applying the treatment liquid, the treatment by the decane coupling agent may be carried out on the support substrate 1 by a vapor deposition method. The treatment time by the vapor deposition method is preferably, for example, 1 to 15 minutes in an oven at 80 ° C to 120 ° C.
在本實施例中,在前處理使用的處理液是含有矽烷偶合劑(以後,也稱為「矽烷化劑」)及溶劑者。以下,詳細說明各成分。 In the present embodiment, the treatment liquid used in the pretreatment is a decane coupling agent (hereinafter, also referred to as "decylating agent") and a solvent. Hereinafter, each component will be described in detail.
矽烷化劑,並無特別限定,可以使用以往周知的任何矽烷化劑。具體而言,可以使用由例如下述式(1)~(3)表示的矽烷化劑。在本說明書中,烷基是碳數1~5,環烷基是碳數5~10,烷氧基是碳數1~5,雜環烷基是碳數5~10。 The alkylating agent is not particularly limited, and any conventionally known alkylating agent can be used. Specifically, a decylating agent represented by, for example, the following formulas (1) to (3) can be used. In the present specification, the alkyl group has a carbon number of 1 to 5, the cycloalkyl group has a carbon number of 5 to 10, the alkoxy group has a carbon number of 1 to 5, and the heterocycloalkyl group has a carbon number of 5 to 10.
(式(1)中,R1是顯示氫原子,或是飽和或是不飽和烷基,R2是顯示飽和或是不飽和烷基、飽和或是不飽和環烷基、或是飽和或是不飽和雜環烷基。R1及R2是彼此結合形成具有氮原子的飽和或是不飽和雜環烷基也可以) (In the formula (1), R 1 is a hydrogen atom or a saturated or unsaturated alkyl group, and R 2 is a saturated or unsaturated alkyl group, a saturated or unsaturated cycloalkyl group, or a saturated or An unsaturated heterocycloalkyl group. R 1 and R 2 are bonded to each other to form a saturated or unsaturated heterocycloalkyl group having a nitrogen atom.
(式(2)中,R3是顯示氫原子、甲基、三甲基矽烷基、或是二甲基矽烷基,R4、R5是各別獨立顯示氫原子、烷基、或是乙烯基) (In the formula (2), R 3 is a hydrogen atom, a methyl group, a trimethylsulfanyl group or a dimethylalkyl group; and R 4 and R 5 each independently exhibit a hydrogen atom, an alkyl group, or an ethylene group. base)
(式(3)中,X是顯示O、CHR7、CHOR7、CR7R7、或是NR8,R6、R7是各別獨立顯示氫原子、飽和或是不飽和烷基、飽和或是不飽和環烷基、三烷基矽烷基、三烷基矽氧烷基、烷氧基、苯基、苯乙基、或是乙醯基,R8是顯示氫原子、烷基、或是三烷基矽烷基) (In the formula (3), X is an O, CHR 7 , CHOR 7 , CR 7 R 7 or NR 8 , and R 6 and R 7 each independently exhibit a hydrogen atom, a saturated or unsaturated alkyl group, and a saturated Or an unsaturated cycloalkyl group, a trialkylalkylene group, a trialkylphosphonium alkyl group, an alkoxy group, a phenyl group, a phenethyl group or an ethyl fluorenyl group, and R8 is a hydrogen atom, an alkyl group, or Trialkyldecylalkyl)
由上述式(1)表示的矽烷化劑,可舉例:N,N-二甲基胺基三甲基矽烷、N,N-二乙胺基三甲基矽烷、 t-丁基胺基三甲基矽烷、烯丙基三甲基矽烷、三甲基乙醯胺、三甲基哌啶、三甲基硅烷基咪唑、三甲基矽基嗎啉、3-三甲基矽烷-2-噁唑烷酮、三甲基三唑、三甲基吡咯烷、2-三甲基矽烷-1,2,3-三唑、1-三甲基矽烷-1,2,4-三唑等。 The decylating agent represented by the above formula (1) may, for example, be N,N-dimethylaminotrimethylnonane or N,N-diethylaminotrimethylnonane. T-butylaminotrimethyldecane, allyltrimethyldecane, trimethylacetamide, trimethylpiperidine, trimethylsilyl imidazole, trimethyldecylmorpholine, 3-tri Methyl nonane-2-oxazolidinone, trimethyltriazole, trimethylpyrrolidine, 2-trimethyldecane-1,2,3-triazole, 1-trimethyldecane-1,2, 4-triazole and the like.
且由上述式(2)表示的矽烷化劑,是可舉例六甲基二矽氧烷、N-六甲基二矽氧烷甲酯、1,2-二-N-辛基四甲基、1,2-二乙烯基四甲基二矽氧烷、七甲基二矽氮烷、九甲基三矽胺、三(二甲基矽烷)胺等。 Further, the decylating agent represented by the above formula (2) is exemplified by hexamethyldioxane, N-hexamethyldioxanmethyl ester, 1,2-di-N-octyltetramethyl, 1,2-divinyltetramethyldioxane, heptamethyldiazolidine, nonylmethyltriamine, tris(dimethylnonane)amine, and the like.
且由上述式(3)表示的矽烷化劑,可舉例三甲基矽烷醋酸、丙酸三甲基矽烷、丁三甲基矽烷、三甲基矽烷羥基-3-戊烯-2-酮等。 Further, the decylating agent represented by the above formula (3) may, for example, be trimethyldecaneacetic acid, trimethyldecane propionate, butanetrimethylnonane or trimethyldecanehydroxy-3-penten-2-one.
矽烷化劑的含有量,是表面處理液中,0.1~50質量%較佳,0.5~30質量%更佳,1.0~20質量%進一步較佳。藉由上述範圍,可確保表面處理液的塗佈性且可以充分地提高圖型表面的疏水性。 The content of the alkylating agent is preferably from 0.1 to 50% by mass, more preferably from 0.5 to 30% by mass, even more preferably from 1.0 to 20% by mass, in the surface treatment liquid. With the above range, the coating property of the surface treatment liquid can be ensured and the hydrophobicity of the surface of the pattern can be sufficiently improved.
溶劑,是可以將矽烷化劑溶解,且,對於成為表面處理對象的樹脂圖型或是被蝕刻圖型的破壞少的話,無特別限定,可以使用以往周知的溶劑。 The solvent is not particularly limited as long as it is less likely to cause damage to the resin pattern to be surface-treated or the pattern to be etched, and a conventionally known solvent can be used.
具體而言可舉例,二甲亞碸等的亞碸類;二甲基碸、二乙碸、雙(2-羥乙基)碸、丁碸等的碸類;N,N-二甲基甲醯胺、N-甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基乙醯胺、N,N-二乙基乙醯胺等的醯胺類;N-甲基-2-吡咯烷 酮、N-乙基-2-吡咯烷酮、N-丙基-2-吡咯烷酮、N-羥基甲基-2-吡咯烷酮、N-羥乙基-2-吡咯烷酮等的內醯胺類;1,3-二甲基-2-咪唑啉酮、1,3-二乙-2-咪唑啉酮,1,3-二異丙-2-咪唑啉酮等的咪唑啉酮類;二甲基乙醚、乙醚、甲基乙基乙醚、二丙醚、二異丙醚、二丁醚等的二烷基醚類;二甲基乙二醇、二甲基二甘醇,二甲基三乙二醇、甲基乙基二甘醇,二甘醇等的二烷基乙二醇醚類;甲基乙基酮、環己酮、2-庚酮、3-庚酮等的酮類;p-薄荷烷、二苯基烷、檸檬烯、松油烯、莰烷、降冰片烯、蒎烷等的萜烯類等。 Specifically, an anthracene such as dimethyl hydrazine; an anthracene such as dimethyl hydrazine, diethyl hydrazine, bis(2-hydroxyethyl) hydrazine or butyl hydrazine; N,N-dimethyl group Indoleamines such as decylamine, N-methylformamide, N,N-dimethylacetamide, N-methylacetamide, N,N-diethylacetamide; N-methyl -2-pyrrolidine a decylamine such as a ketone, N-ethyl-2-pyrrolidone, N-propyl-2-pyrrolidone, N-hydroxymethyl-2-pyrrolidone or N-hydroxyethyl-2-pyrrolidone; An imidazolinone such as dimethyl-2-imidazolidinone, 1,3-diethyl-2-imidazolidinone or 1,3-diisopropyl-2-imidazolidinone; dimethyl ether, diethyl ether, Dialkyl ethers such as methyl ethyl ether, dipropyl ether, diisopropyl ether, dibutyl ether; dimethyl glycol, dimethyl diglycol, dimethyl triethylene glycol, methyl a dialkyl glycol ether such as ethyl diethylene glycol or diethylene glycol; a ketone such as methyl ethyl ketone, cyclohexanone, 2-heptanone or 3-heptanone; p-menthane, a terpene such as phenylalkane, limonene, terpinene, decane, norbornene or decane.
藉由上述的前處理,如第1圖(b)所示,在支撐基板1的表面1a從矽烷偶合劑(矽烷化劑)衍生的處理膜2是形成於表面1a的整體。 According to the pretreatment described above, as shown in Fig. 1(b), the treatment film 2 derived from the decane coupling agent (the alkylating agent) on the surface 1a of the support substrate 1 is formed on the entire surface 1a.
在此說明,在前處理過程中在處理膜2及支撐基板1的表面1a之間發生的化學反應。第2圖是顯示在前處理過程中在處理膜2及支撐基板1的表面1a之間發生的化學反應的圖。在以下的說明中舉例說明,由上述式(2)顯示的矽烷化劑(HMDS(六甲基二矽氧烷))的例。 Here, the chemical reaction occurring between the treatment film 2 and the surface 1a of the support substrate 1 during the pretreatment is explained. Fig. 2 is a view showing a chemical reaction occurring between the treatment film 2 and the surface 1a of the support substrate 1 during the pretreatment. In the following description, an example of a decylating agent (HMDS (hexamethyldioxane)) represented by the above formula (2) will be exemplified.
由玻璃所構成的支撐基板1,是在表面1a存在OH基(羥基)。因此,進行由矽烷偶合劑所產生的前處理的話,HMDS會分解而結合成2個羥基,使氨(NH3)發生。由此,支撐基板1是使表面1a中的OH基(羥基)被矽烷化,如第2圖所示包含從矽烷化劑衍生的 矽烷基的處理膜2是形成於表面1a。因此,支撐基板1,是藉由在表面1a形成處理膜2(矽烷基)而成為OH基(羥基)不存在的狀態或是幾乎不存在的狀態。 The support substrate 1 made of glass has an OH group (hydroxyl group) on the surface 1a. Therefore, when the pretreatment by the decane coupling agent is carried out, HMDS is decomposed and combined into two hydroxyl groups to cause ammonia (NH 3 ) to occur. Thereby, the support substrate 1 is such that the OH group (hydroxyl group) in the surface 1a is decanolated, and the treatment film 2 containing the decyl group derived from the decylating agent as shown in Fig. 2 is formed on the surface 1a. Therefore, the support substrate 1 is in a state in which the OH group (hydroxyl group) does not exist or is almost absent by forming the treatment film 2 (alkylene group) on the surface 1a.
接著,如第1圖(c)所示,在由前處理過程所產生的處理被施加的處理面即處理膜2上,塗佈作為樹脂基板形成用的材料的包含聚醯胺酸的溶液3a。在本實施例中,在處理膜2上選擇例如將溶液3a藉由噴墨法形成的方式。由此,如後述,在從平面看的狀態中,支撐基板1上的樹脂基板3可成為比支撐基板1更小的尺寸。 Next, as shown in Fig. 1(c), a solution 3a containing polylysine as a material for forming a resin substrate is applied onto the treatment film 2 which is a treatment surface to which the treatment generated by the pretreatment process is applied. . In the present embodiment, for example, a mode in which the solution 3a is formed by an inkjet method is selected on the treatment film 2. Thereby, as will be described later, the resin substrate 3 on the support substrate 1 can be made smaller than the support substrate 1 in a state seen from a plane.
以下說明,在本實施例所使用的聚醯胺酸。 The polyamine acid used in the present embodiment will be described below.
在本實施例中,在由聚醯亞胺所構成的樹脂基板的生成所使用的聚醯胺酸並無特別限定,從以往作為聚醯亞胺樹脂的前驅體所知的聚醯胺酸適宜地選擇。 In the present embodiment, the polyamic acid used for the formation of the resin substrate composed of the polyimide is not particularly limited, and it is suitable from the conventional polyglycine which is known as a precursor of the polyimide resin. Ground selection.
最佳的聚醯胺酸,是例如可舉例由下式(4)表示的構成單位所構成的聚醯胺酸。 The polyamic acid is, for example, a polylysine which is composed of a constituent unit represented by the following formula (4).
(式(4)中,R9是4價的有機基,R10是2價的有 機基,n是由式(1)表示的構成單位的反覆數) (In the formula (4), R 9 is a tetravalent organic group, R 10 is a divalent organic group, and n is an inverse number of constituent units represented by the formula (1))
式(4)中,R9是4價的有機基,R10是2價的有機基,那些的碳數是2~50較佳,2~30更佳。R1及R2,各別是脂肪族基、或芳香族基、或將這些的構造組合的基也可以。R9及R10,是除了碳原子、及氫原子以外,包含鹵素原子、氧原子、及硫原子也可以。R9及R10是包含氧原子、氮原子、或是硫原子的情況,氧原子、氮原子、或是硫原子,是作為從含氮複素環基、-CONH-、-NH-、-N=N-、-CH=N-、-COO-、-O-、-CO-、-SO-、-SO2-、-S-、及-S-S-所選擇的基,被包含於R9及R10也可以,作為從-O-、-CO-、-SO-、-SO2-、-S-、及-S-S-所選擇的基,被包含於R9及R10更佳。 In the formula (4), R 9 is a tetravalent organic group, and R 10 is a divalent organic group, and those having a carbon number of 2 to 50 are more preferably 2 to 30. R 1 and R 2 each may be an aliphatic group or an aromatic group, or a group in which these structures are combined. R 9 and R 10 may contain a halogen atom, an oxygen atom, and a sulfur atom in addition to a carbon atom and a hydrogen atom. R 9 and R 10 are those containing an oxygen atom, a nitrogen atom or a sulfur atom, and an oxygen atom, a nitrogen atom or a sulfur atom is used as a nitrogen-containing complex ring group, -CONH-, -NH-, -N. The groups selected by =N-, -CH=N-, -COO-, -O-, -CO-, -SO-, -SO 2 -, -S-, and -SS- are included in R 9 and R 10 may be selected as the group selected from -O-, -CO-, -SO-, -SO 2 -, -S-, and -SS-, and is preferably contained in R 9 and R 10 .
藉由將由上述式(4)表示的構成單位所構成的聚醯胺酸加熱,就可獲得由下式(5)表示的構成單位所構成的聚醯亞胺樹脂。 By heating the polyamic acid composed of the constituent unit represented by the above formula (4), a polyimine resin composed of the constituent units represented by the following formula (5) can be obtained.
(式(5)中,R1及R2是與式(4)同義,n是由式(5)表示的構成單位的反覆數)。 (In the formula (5), R 1 and R 2 are synonymous with the formula (4), and n is the number of the constituent units represented by the formula (5)).
以下,說明在聚醯胺酸的調製所使用的四甲羧酸二無水物成分、二胺成分、及N,N,N’,N’-四甲基尿 素、及聚醯胺酸的製造方法。 Hereinafter, the tetracarboxylic acid dihydrate component, the diamine component, and the N, N, N', N'-tetramethylurea used for the preparation of polylysine will be described. And a method for producing polylysine.
成為聚醯胺酸的合成原料的四甲羧酸二無水物成分,是可藉由與二胺成分反應而形成聚醯胺酸的話,無特別限定。四甲羧酸二無水物成分,可以從以往作為聚醯胺酸的合成原料使用的四甲羧酸二無水物適宜地選擇。四甲羧酸二無水物成分,是芳香族四甲羧酸二無水物、或脂肪族四甲羧酸二無水物也可以,但是從可獲得的聚醯亞胺樹脂的耐熱性的點,芳香族四甲羧酸二無水物是較佳。四甲羧酸二無水物成分,是將2種以上組合使用也可以。 The tetracarboxylic acid dihydrate component which is a synthetic raw material of polyamic acid is not particularly limited as long as it can form a polyamic acid by reacting with a diamine component. The tetramethylcarboxylic acid dihydrate component can be suitably selected from tetramethylcarboxylic acid dihydrate which has been conventionally used as a synthetic raw material of polyglycine. The tetramethyl carboxylic acid di-anhydrous component may be an aromatic tetramethyl carboxylic acid di-anhydrous or an aliphatic tetracarboxylic carboxylic acid di-anhydrate, but the aromatic point of the available polyimine resin may be aromatic. A tetracarboxylic acid dihydrate is preferred. The tetramethyl carboxylic acid dihydrate component may be used in combination of two or more kinds.
芳香族四甲羧酸二無水物的最佳的具體例,可舉例:苯均四酸酸二無水物、3,3’,4,4’-聯苯四甲羧酸二無水物、2,3,3’,4’-聯苯四甲羧酸二無水物、3,3’,4,4’-二苯甲酮四甲羧酸二無水物、4,4’-鄰苯二甲酸酸無水物、及3,3’,4,4’-二苯碸四羧酸二無水物等。在這些之中,從價格、取得容易性等,3,3’,4,4’-聯苯四甲羧酸二無水物、及苯均四酸酸二無水物較佳。 The most preferable specific examples of the aromatic tetracarboxylic acid dihydrate are exemplified by pyromellitic acid di-anhydrous, 3,3',4,4'-biphenyltetracarboxylic acid di-anhydride, 2, 3,3',4'-biphenyltetracarboxylic acid di-anhydride, 3,3',4,4'-benzophenone tetracarboxylic acid di-anhydride, 4,4'-phthalic acid Anhydrous, and 3,3',4,4'-diphenyltetracarboxylic acid dihydrate, and the like. Among these, 3,3',4,4'-biphenyltetracarboxylic acid di-anhydride and pyromellitic acid di-anhydride are preferable from the viewpoint of availability and availability.
成為聚醯胺酸的合成原料的二胺成分,是可藉由與四甲羧酸二無水物成分反應而形成聚醯胺酸的話無特別限定。二胺成分,是可以從以往作為聚醯胺酸的合成原料所使用的二胺適宜地選擇。二胺成分,是芳香族二胺,或脂 肪族二胺也可以,但是從可獲得的聚醯亞胺樹脂的耐熱性的點,芳香族二胺較佳。二胺成分,是將2種以上組合使用也可以。 The diamine component which is a synthetic raw material of polyamic acid is not particularly limited as long as it can react with the tetracarboxylic acid dihydrate component to form polyglycine. The diamine component can be suitably selected from the conventional diamine used as a synthetic raw material of polyglycolic acid. a diamine component, an aromatic diamine, or a fat An aliphatic diamine may also be used, but an aromatic diamine is preferred from the viewpoint of heat resistance of the obtained polyimine resin. The diamine component may be used in combination of two or more kinds.
芳香族二胺的最佳的具體例,可舉例:p-亞苯二胺、m-亞苯二胺、2,4-二氨基甲苯、4,4’-二氨基聯苯、4,4’-二氨基-2,2’-雙(三氟矽甲基)聯苯、3,3’-二氨基二苯碸、4,4’-二氨基二苯碸、4,4’-氨基二苯基硫醚、4,4’-二氨基二苯基甲烷、4,4’-二氨基二苯醚、3,4’-二氨基二苯醚、3,3’-二氨基二苯醚、1,4-雙(4-胺基苯氧)苯、1,3-雙(4-胺基苯氧)苯、1,3-雙(3-胺基苯氧)苯、4,4’-雙(4-胺基苯氧)聯苯、雙[4-(4-胺基苯氧)苯]碸、雙[4-(3-胺基苯氧)苯]碸、2,2-雙[4-(4-胺基苯氧)苯]丙烷、及2,2-雙[4-(4-胺基苯氧)苯]六氟丙烷等。在這些之中,從價格、取得容易性等,p-亞苯二胺、m-亞苯二胺、2,4-二氨基甲苯、及4,4’-二氨基二苯醚較佳。 The most preferable specific examples of the aromatic diamine can be exemplified by p-phenylenediamine, m-phenylenediamine, 2,4-diaminotoluene, 4,4'-diaminobiphenyl, 4,4'. -diamino-2,2'-bis(trifluoromethyl)diphenyl, 3,3'-diaminodiphenyl hydrazine, 4,4'-diaminodiphenyl hydrazine, 4,4'-aminodiphenyl Thiol, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl ether, 1 , 4-bis(4-aminophenoxy)benzene, 1,3-bis(4-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, 4,4'-double (4-Aminophenoxy)biphenyl, bis[4-(4-aminophenoxy)benzene]fluorene, bis[4-(3-aminophenoxy)benzene]pyrene, 2,2-bis[4 -(4-Aminophenoxy)benzene]propane, and 2,2-bis[4-(4-aminophenoxy)benzene]hexafluoropropane. Among these, p-phenylenediamine, m-phenylenediamine, 2,4-diaminotoluene, and 4,4'-diaminodiphenyl ether are preferable from the viewpoint of availability and availability.
四甲羧酸二無水物成分、及二胺成分,是將N,N,N’,N’-四甲基尿素作為溶劑使用地合成。加熱將N,N,N’,N’-四甲基尿素作為溶劑使用合成的聚醯胺酸而生成聚醯亞胺樹脂的話,容易獲得拉伸率及耐熱性優異的聚醯亞胺樹脂。 The tetracarboxylic acid dihydrate component and the diamine component are synthesized by using N, N, N', N'-tetramethyl urea as a solvent. When the polyimine resin is produced by using N, N, N', N'-tetramethyl urea as a solvent, the polyimine resin is excellent in elongation and heat resistance.
將以上說明的四甲羧酸二無水物成分、及二胺成分,將N,N,N’,N’-四甲基尿素作為溶劑使用反應而合成聚醯胺酸。將聚醯胺酸合成時,四甲羧酸二無水物成分及二胺成分的使用量雖無特別限定,但對於四甲羧酸二無水物成分1莫耳,將二胺成分使用0.50~1.50莫耳較佳,使用0.60~1.30莫耳更佳,使用0.70~1.20莫耳特佳。 The tetracarboxylic acid dihydrate component and the diamine component described above are reacted with N, N, N', N'-tetramethyl urea as a solvent to synthesize polyamine. When polylysine is synthesized, the amount of the tetracarboxylic acid dihydrate component and the diamine component used is not particularly limited, but for the tetracarboxylic acid dihydrate component 1 mol, the diamine component is used 0.50 to 1.50. Moore is better, use 0.60~1.30 Molar is better, use 0.70~1.20 Mote.
N,N,N’,N’-四甲基尿素的使用量,是在不阻礙本發明的目的之範圍的話,無特別限定。典型的N,N,N’,N’-四甲基尿素的使用量,是對於四甲羧酸二無水物成分的量及二胺成分的量的合計100質量份,成為100~4000質量份較佳,150~2000質量份更佳。 The amount of use of N, N, N', N'-tetramethylurea is not particularly limited as long as it does not inhibit the object of the present invention. The amount of the N, N, N', N'-tetramethyl urea to be used is 100 to 4000 parts by mass based on the total amount of the tetracarboxylic acid dihydrate component and the amount of the diamine component. Preferably, it is preferably 150 to 2000 parts by mass.
且將聚醯胺酸合成時,溶劑,只有使用N,N,N’,N’-四甲基尿素最佳。但是,在不阻礙本發明的目的之範圍,可以與N,N,N’,N’-四甲基尿素,一起使用N,N,N’,N’-四甲基尿素的其他的溶劑。N,N,N’,N’-四甲基尿素的其他的溶劑,是可以從以往聚醯胺酸的合成所使用的溶劑適宜地選擇。N,N,N’,N’-四甲基尿素的其他的溶劑的最佳的例,是例如可舉例N-甲基-2-吡咯烷酮、N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、六甲基磷醯胺、及1、3-二甲基-2-咪唑啉酮等。與N,N,N’,N’-四甲基尿素,一起使用N,N,N’,N’-四甲基尿素的其他的溶劑的情況,其他的溶劑的使用量,是對於在聚醯胺酸的合成所使用的溶劑的全質量為20質量%以下較佳,10質量%以下更佳,5質量%以下特佳。 Further, when polylysine is synthesized, the solvent is preferably only N, N, N', N'-tetramethyl urea. However, other solvents of N, N, N', N'-tetramethyl urea may be used together with N, N, N', N'-tetramethyl urea, without departing from the object of the present invention. The other solvent of N, N, N', N'-tetramethyl urea can be suitably selected from the solvent used for the synthesis of the conventional polyamic acid. The most preferable examples of the other solvent of N, N, N', N'-tetramethyl urea are, for example, N-methyl-2-pyrrolidone, N,N-dimethylformamide, N, N-dimethylacetamide, hexamethylphosphoniumamine, and 1, 3-dimethyl-2-imidazolidinone. In the case of using N, N, N', N'-tetramethyl urea together with other solvents of N, N, N', N'-tetramethyl urea, the amount of other solvents used is for The total mass of the solvent used for the synthesis of the proline is preferably 20% by mass or less, more preferably 10% by mass or less, and particularly preferably 5% by mass or less.
四甲羧酸二無水物成分、及二胺成分反應時的溫度,是只要反應可良好地進行的話,無特別限定。典型的四甲羧酸二無水物成分、及二胺成分的反應溫度,是-5~150℃較佳,0~120℃更佳,0~70℃特佳。且,四甲羧酸二無水物成分、及二胺成分反應的時間,雖是依據反應溫度不同,但是典型是1~50小時較佳,2~40小時更佳,5~30小時特佳。 The temperature at which the tetracarboxylic acid dihydrate component and the diamine component are reacted is not particularly limited as long as the reaction proceeds satisfactorily. The reaction temperature of the typical tetracarboxylic acid dihydrate component and the diamine component is preferably -5 to 150 ° C, more preferably 0 to 120 ° C, and particularly preferably 0 to 70 ° C. Further, although the reaction time of the tetracarboxylic acid dihydrate component and the diamine component is different depending on the reaction temperature, it is preferably 1 to 50 hours, more preferably 2 to 40 hours, and particularly preferably 5 to 30 hours.
藉由以上說明的方法,可獲得聚醯胺酸溶液。又,使用包含聚醯亞胺粉末的溶液形成聚醯亞胺也可以。 A polyaminic acid solution can be obtained by the method described above. Further, a polyimine may be formed using a solution containing a polyimide pigment powder.
接著,如第1圖(d)所示,藉由將溶液3a被塗佈的支撐基板1加熱煅燒而在支撐基板1形成內含由聚醯亞胺所構成的樹脂基板3的積層體10(煅燒過程)。 Next, as shown in FIG. 1(d), the support substrate 1 coated with the solution 3a is heated and fired to form a laminate 10 containing the resin substrate 3 composed of polyimide. Calcination process).
在煅燒過程中,例如,將支撐基板1加熱至120℃~350℃,較佳是150℃~350℃。藉由在這種溫度範圍加熱,藉由抑制被生成的聚醯亞胺(樹脂基板3)的熱劣化和熱分解就可以製造良質者。且,將聚醯胺酸的加熱由高溫進行的情況,因為具有多量的能量的消耗、和高溫中的處理設備的隨時間推移劣化被促進的情況,所以將聚醯胺酸的加熱由較低的溫度進行也較佳。具體而言,將聚醯胺酸加熱的溫度的上限,是250℃以下較佳,220℃以下更佳,200℃以下特佳。 In the calcination process, for example, the support substrate 1 is heated to 120 ° C to 350 ° C, preferably 150 ° C to 350 ° C. By heating in such a temperature range, it is possible to manufacture a good quality by suppressing thermal deterioration and thermal decomposition of the produced polyimine (resin substrate 3). Further, in the case where the heating of the polylysine is carried out at a high temperature, since the consumption of a large amount of energy and the deterioration of the treatment equipment in the high temperature are promoted over time, the heating of the polyproline is lower. The temperature is also preferably carried out. Specifically, the upper limit of the temperature at which the polyglycolic acid is heated is preferably 250 ° C or lower, more preferably 220 ° C or lower, and particularly preferably 200 ° C or lower.
在本實施例中,在支撐基板1的表面1a及樹 脂基板3之間,處理膜2存在。因為在表面1a中形成有由處理膜2所產生的矽烷基,所以OH基(羥基)是不存在或是幾乎不存在,可抑制與構成樹脂基板3的聚醯亞胺共有結合。且,藉由形成有矽烷基使與聚醯亞胺及處理膜2的密合性下降,樹脂基板3的剝離性提高。 In the present embodiment, the surface 1a of the support substrate 1 and the tree The treatment film 2 is present between the grease substrates 3. Since the fluorenyl group produced by the treatment film 2 is formed on the surface 1a, the OH group (hydroxy group) is absent or hardly present, and the binding to the polyimine constituting the resin substrate 3 can be suppressed. In addition, the adhesion to the polyimide and the treatment film 2 is lowered by the formation of the alkylene group, and the releasability of the resin substrate 3 is improved.
第3圖是顯示處理膜2中的剝離性提高的效果的實驗結果。在第3圖中,橫軸是顯示從將樹脂基板形成於支撐基板上的經過的時間(經過日數),縱軸是顯示聚醯亞胺(樹脂基板)及支撐基板的密合強度(單位:g)者。且,在第3圖中,為了比較,使用未進行由矽烷偶合劑所進行的處理的支撐基板的情況顯示為「未處理」,使用已進行了由矽烷偶合劑所進行的處理的支撐基板的情況顯示為「處理過1」、「處理過2」。又,「處理過1」及「處理過2」,是使用於處理的矽烷偶合劑相異,在「處理過1」中使用矽烷偶合劑OAP(東京應化工業股份有限公司製),在「處理過2」中使用矽烷偶合劑OSRA(東京應化工業股份有限公司製)。 Fig. 3 is an experimental result showing an effect of improving the peeling property in the treatment film 2. In Fig. 3, the horizontal axis indicates the elapsed time (the number of days elapsed) from the formation of the resin substrate on the support substrate, and the vertical axis indicates the adhesion strength of the polyimine (resin substrate) and the support substrate (unit) :g). Further, in Fig. 3, for the purpose of comparison, the case where the support substrate which is not subjected to the treatment with the decane coupling agent is used as "untreated", and the support substrate which has been subjected to the treatment by the decane coupling agent is used. The situation is displayed as "Processed 1" and "Processed 2". In addition, "Processing 1" and "Processing 2" are different from the decane coupling agent used for the treatment, and the "Processing 1" is a decane coupling agent OAP (manufactured by Tokyo Ohka Kogyo Co., Ltd.). In the treatment 2", a decane coupling agent OSRA (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was used.
如第3圖所示,無論在已進行了由矽烷偶合劑所進行的處理的情況(處理過1、2)或是未進行的情況(未處理)的其中任一,一旦將樹脂基板形成於支撐基板上之後隨時間經過密合強度皆往下降。經過日數若是超過3日,密合強度是與已進行了及不進行由矽烷偶合劑所進行的處理的情況,皆沒有太大的差別。此原因,是伴隨時間的經過構成樹脂基板的聚醯亞胺會藉由吸附水分而使 支撐基板的界面中的密合強度下降。 As shown in Fig. 3, the resin substrate is formed once, in the case where the treatment by the decane coupling agent has been carried out (processed 1, 2) or not (untreated). After the support substrate, the adhesion strength decreases with time. If the number of days passed is more than 3 days, the adhesion strength is the same as that of the treatment with or without the decane coupling agent, and there is not much difference. The reason for this is that the polyimide which constitutes the resin substrate with the passage of time is caused by adsorbing moisture. The adhesion strength in the interface of the support substrate is lowered.
通常,在形成了樹脂基板隨後就會進行從支撐基板的剝離。因此,經過時間短的情況時,使密合強度下降是重要的。 Usually, peeling from the support substrate is performed after the resin substrate is formed. Therefore, it is important to reduce the adhesion strength when the elapsed time is short.
從第3圖可以確認,進行了由矽烷偶合劑所進行的處理的情況(處理過1、2),即使經過時間短,亦即,聚醯亞胺的水分吸附即使不產生,仍可以以較低的密合力將樹脂基板從支撐基板剝離。 It can be confirmed from Fig. 3 that the treatment by the decane coupling agent (treated 1 and 2) is carried out, and even if the elapsed time is short, even if the moisture adsorption of the polyimine is not produced, it can be compared. The low adhesion force peels the resin substrate from the support substrate.
接著,在樹脂基板3的上面將因應用途的電子設備(未圖示)積層。例如,在樹脂基板3上形成TFT元件,進一步藉由將顯示元件積層或是貼合,就可形成液晶顯示器、有機EL顯示器、電子紙等的顯示設備,特別是可撓性顯示設備。 Next, an electronic device (not shown) for the application is laminated on the upper surface of the resin substrate 3. For example, a TFT element is formed on the resin substrate 3, and a display device such as a liquid crystal display, an organic EL display, or an electronic paper, in particular, a flexible display device can be formed by laminating or bonding the display elements.
形成了未圖示的電子設備之後,如第1圖(e)所示,從支撐基板1將樹脂基板3剝離(剝離過程)。從支撐基板1將樹脂基板3剝離時,藉由使用本實施例的基板剝離裝置就可將樹脂基板3從支撐基板1良好地剝離。 After the electronic device (not shown) is formed, as shown in FIG. 1(e), the resin substrate 3 is peeled off from the support substrate 1 (peeling process). When the resin substrate 3 is peeled off from the support substrate 1, the resin substrate 3 can be favorably peeled off from the support substrate 1 by using the substrate peeling device of the present embodiment.
第4圖,是顯示本實施例的基板剝離裝置100的概略構成的圖。 Fig. 4 is a view showing a schematic configuration of a substrate peeling apparatus 100 of the present embodiment.
如第4圖所示,基板剝離裝置100,是具備:插入部20、及移動機構21、及剝離機構22。 As shown in FIG. 4, the substrate peeling apparatus 100 includes an insertion portion 20, a moving mechanism 21, and a peeling mechanism 22.
插入部20,是被配置於樹脂基板3的至少1個角部,插入樹脂基板3的角部中的與支撐基板1的界面 者。在本實施例中,插入部20,是包含:第1插入部30、及第2插入部31、及第3插入部32、及第4插入部33。 The insertion portion 20 is disposed at at least one corner portion of the resin substrate 3 and is inserted into the corner portion of the resin substrate 3 at the interface with the support substrate 1 By. In the present embodiment, the insertion portion 20 includes the first insertion portion 30, the second insertion portion 31, the third insertion portion 32, and the fourth insertion portion 33.
第1插入部30、第2插入部31、第3插入部32及第4插入部33,是各別對應平面形狀為矩形狀的樹脂基板3的4個角部3A、3B、3C、3D地配置。 The first insertion portion 30, the second insertion portion 31, the third insertion portion 32, and the fourth insertion portion 33 are four corner portions 3A, 3B, 3C, and 3D of the resin substrate 3 each having a rectangular shape in plan view. Configuration.
這些第1插入部30、第2插入部31、第3插入部32及第4插入部33,是具有相同的構成。在本實施例中,第1插入部30,是具備:刀具30A、及推出部30B。第2插入部31,是具備:刀具31A、及推出部31B。第3插入部32,是具備:刀具32A、及推出部32B。第4插入部33,是具備:刀具33A、及推出部33B。 The first insertion portion 30, the second insertion portion 31, the third insertion portion 32, and the fourth insertion portion 33 have the same configuration. In the present embodiment, the first insertion portion 30 includes a cutter 30A and an ejection portion 30B. The second insertion portion 31 includes a cutter 31A and an ejection portion 31B. The third insertion portion 32 includes a cutter 32A and an ejection portion 32B. The fourth insertion portion 33 includes a cutter 33A and an ejection portion 33B.
刀具30A、31A、32A、33A,是使用平刃或是圓刃的其中任一較佳。在本實施例中,刀具30A、31A、32A、33A,例如,使用由裁切刃所構成的平刃。 The cutters 30A, 31A, 32A, and 33A are preferably any of a flat blade or a round blade. In the present embodiment, the cutters 30A, 31A, 32A, 33A, for example, use a flat blade formed by a cutting edge.
推出部30B、31B、32B、33B,是例如,由致動器等所構成,藉由將刀具30A、31A、32A、33A各別朝規定方向推出而可插入支撐基板1及樹脂基板3的界面。 The push-out portions 30B, 31B, 32B, and 33B are configured by, for example, an actuator, and can be inserted into the interface of the support substrate 1 and the resin substrate 3 by pushing the cutters 30A, 31A, 32A, and 33A in a predetermined direction. .
移動機構21,是在插入部20(各刀具30A、31A、32A、33A)被插入樹脂基板3及支撐基板1的界面的狀態下,將該插入部20及支撐基板1相對移動者。移動機構21,是例如,由致動器等的驅動裝置所構成。移動機構21,是將第1插入部30、第2插入部31、第3插 入部32及第4插入部33各別獨立沿著樹脂基板3的外周可移動,由此,在樹脂基板3及支撐基板1的界面形成開縫。 In the moving mechanism 21, the insertion portion 20 and the support substrate 1 are relatively moved in a state where the insertion portion 20 (each of the cutters 30A, 31A, 32A, and 33A) is inserted into the interface between the resin substrate 3 and the support substrate 1. The moving mechanism 21 is constituted by, for example, a driving device such as an actuator. The moving mechanism 21 is the first insertion unit 30, the second insertion unit 31, and the third insertion. The inlet portion 32 and the fourth insertion portion 33 are each independently movable along the outer circumference of the resin substrate 3, whereby a slit is formed at the interface between the resin substrate 3 and the support substrate 1.
在本實施例中,第1插入部30、第2插入部31、第3插入部32及第4插入部33是藉由各別沿著樹脂基板3的外周獨立移動,在樹脂基板3及支撐基板1的界面中將該樹脂基板3的外周呈框狀包圍的方式形成開縫。 In the present embodiment, the first insertion portion 30, the second insertion portion 31, the third insertion portion 32, and the fourth insertion portion 33 are independently moved along the outer circumference of the resin substrate 3, and are supported on the resin substrate 3 and the support. In the interface of the substrate 1, a slit is formed in such a manner that the outer circumference of the resin substrate 3 is surrounded by a frame.
剝離機構22,是將樹脂基板3保持,藉由第1插入部30及第2插入部31將形成於界面的開縫作為基點從支撐基板1將樹脂基板3剝離。 In the peeling mechanism 22, the resin substrate 3 is held, and the resin substrate 3 is peeled off from the support substrate 1 by using the slits formed at the interface as the base points by the first insertion portion 30 and the second insertion portion 31.
剝離機構22,是具有將樹脂基板3保持的保持部40。保持部40中的樹脂基板3的保持方法並無特別限定,可以採用例如,將樹脂基板3吸附保持的吸附保持方式、和將樹脂基板3黏著保持的黏著方式、和將樹脂基板3的開縫部分直接把持的把持方式、和將開縫部分捲附於輥軸構件的捲附方式等。 The peeling mechanism 22 is a holding portion 40 that holds the resin substrate 3 . The method of holding the resin substrate 3 in the holding portion 40 is not particularly limited, and for example, an adsorption holding method in which the resin substrate 3 is adsorbed and held, an adhesion method in which the resin substrate 3 is adhered and held, and a slitting of the resin substrate 3 can be employed. The holding method of the part directly held, and the winding method of attaching the slit portion to the roller member.
在此,對於由基板剝離裝置100所產生的基板剝離方法依據第5圖所示的流程圖說明。 Here, the substrate peeling method by the substrate peeling apparatus 100 will be described based on the flowchart shown in FIG.
本實施例的基板剝離方法,是具備:插入步驟S1、及移動步驟S2、及剝離步驟S3。 The substrate peeling method of the present embodiment includes an insertion step S1, a moving step S2, and a peeling step S3.
在插入步驟S1中,插入部20,是插入樹脂基板3的角部3A、3B中的與支撐基板1的界面。具體而言,第1插入部30、第2插入部31、第3插入部32及第4插入部33,是藉由各推出部30B、31B、32B、33B,藉 由將刀具30A、31A、32A、33A從角部3A、3B漸漸地推入,而插入界面K。 In the insertion step S1, the insertion portion 20 is an interface with the support substrate 1 among the corner portions 3A, 3B of the resin substrate 3. Specifically, the first insertion portion 30, the second insertion portion 31, the third insertion portion 32, and the fourth insertion portion 33 are borrowed by the respective ejection portions 30B, 31B, 32B, and 33B. The interface K is inserted by gradually pushing the cutters 30A, 31A, 32A, and 33A from the corner portions 3A and 3B.
在本實施例中,如第4圖所示,第1插入部30,是例如,由平刃所構成的刀具30A的刃面是對於角部3A,形成大致45度的角度地配置。 In the present embodiment, as shown in Fig. 4, the first insertion portion 30 is, for example, a blade surface of a cutter 30A formed of a flat blade which is disposed at an angle of substantially 45 degrees with respect to the corner portion 3A.
在本實施例中,推出部30B,是將刀具30A朝刃面的垂直交叉方向推出,插入角部3A的界面K。 In the present embodiment, the push-out portion 30B is an interface K that pushes the cutter 30A in the vertical intersecting direction of the blade surface and inserts the corner portion 3A.
且在第2插入部31中,也如第4圖所示,由平刃所構成的刀具31A的刃面是對於角部3B,形成大致45度的角度地配置。推出部31B,是將刀具31A朝刃面的垂直交叉方向推出,並插入角部3B的界面。 Further, in the second insertion portion 31, as shown in Fig. 4, the blade surface of the cutter 31A composed of the flat blade is disposed at an angle of substantially 45 degrees with respect to the corner portion 3B. The push-out portion 31B is an interface that pushes the cutter 31A in the vertical intersecting direction of the blade surface and inserts the corner portion 3B.
且在第3插入部32中,也如第4圖所示,由平刃所構成的刀具32A的刃面是對於角部3C,形成大致45度的角度地配置。推出部32B,是將刀具32A朝刃面的垂直交叉方向推出,並插入角部3C的界面。 Further, in the third insertion portion 32, as shown in Fig. 4, the blade surface of the cutter 32A composed of the flat blade is disposed at an angle of substantially 45 degrees with respect to the corner portion 3C. The push-out portion 32B is an interface that pushes the cutter 32A in the vertical intersecting direction of the blade surface and inserts the corner portion 3C.
且在第4插入部33中,也如第4圖所示,由平刃所構成的刀具33A的刃面是對於角部3D,形成大致45度的角度地配置。推出部33B,是將刀具33A朝刃面的垂直交叉方向推出,並插入角部3D的界面。 Further, in the fourth insertion portion 33, as shown in Fig. 4, the blade surface of the cutter 33A composed of the flat blade is disposed at an angle of substantially 45 degrees with respect to the corner portion 3D. The push-out portion 33B is an interface that pushes the cutter 33A in the vertical intersecting direction of the blade surface and inserts the corner portion 3D.
在本實施例中,將樹脂基板3比支撐基板1更小地形成。因此,刀具30A、31A、32A、33A是成為在支撐基板1的表面滑接的狀態。因此,支撐基板1,是可以導引刀具30A、31A、32A、33A插入樹脂基板3的界面的插入動作。 In the present embodiment, the resin substrate 3 is formed smaller than the support substrate 1. Therefore, the cutters 30A, 31A, 32A, and 33A are in a state of being slidably attached to the surface of the support substrate 1. Therefore, the support substrate 1 is an insertion operation that can guide the insertion of the cutters 30A, 31A, 32A, and 33A into the interface of the resin substrate 3.
在移動步驟S2中,移動機構21,是如第6圖所示,將被插入於界面的刀具30A、31A、32A、33A沿著樹脂基板3的外周獨立移動。刀具30A、31A、32A、33A,是藉由在支撐基板1的表面滑接的狀態下移動而可以將開縫S良好地形成。 In the moving step S2, as shown in Fig. 6, the moving mechanism 21 independently moves the cutters 30A, 31A, 32A, and 33A inserted in the interface along the outer circumference of the resin substrate 3. The cutters 30A, 31A, 32A, and 33A are formed by moving in a state where the surface of the support substrate 1 is slidably attached, whereby the slit S can be formed satisfactorily.
在本實施例中,在各角部3A、3B、3C、3D中藉由將刀具的插入方向和插入量的控制精度佳地進行,而可將樹脂基板3的外周包圍的方式將開縫S均一地形成。 In the present embodiment, the slits S can be surrounded by the outer circumference of the resin substrate 3 by controlling the insertion direction of the cutter and the insertion precision of the respective corner portions 3A, 3B, 3C, and 3D. Formed uniformly.
形成了開縫S之後,實行剝離步驟S3。 After the slit S is formed, the peeling step S3 is performed.
在剝離步驟S3中,剝離機構22,是將保持部40中的形成有樹脂基板3的開縫S的部分(開縫形成部分)保持。在本實施例中,保持部40,是將開縫形成部分吸附保持。 In the peeling step S3, the peeling mechanism 22 holds the portion (slit forming portion) in which the slit S of the resin substrate 3 is formed in the holding portion 40. In the present embodiment, the holding portion 40 is suction-held by the slit forming portion.
剝離機構22,是藉由插入部20以形成於界面K的開縫S作為基點,將樹脂基板3從支撐基板1漸漸地剝離。 In the peeling mechanism 22, the resin substrate 3 is gradually peeled off from the support substrate 1 by the insertion portion 20 with the slit S formed at the interface K as a base point.
依據本實施例,因為在支撐基板1的表面1a形成有處理膜2,所以如上述聚醯亞胺及處理膜2的密合性會下降。因此,以上述開縫S作為起點,可以將形成有電子設備的樹脂基板3從支撐基板1簡便且確實地剝離。 According to the present embodiment, since the treatment film 2 is formed on the surface 1a of the support substrate 1, the adhesion between the polyimide and the treatment film 2 is lowered. Therefore, the resin substrate 3 on which the electronic device is formed can be easily and reliably peeled off from the support substrate 1 by using the slit S as a starting point.
因此,在剝離時可以不會破壞樹脂基板3地從支撐基板1容易地剝離。 Therefore, it is possible to easily peel off from the support substrate 1 without damaging the resin substrate 3 at the time of peeling.
接著,說明本發明的第二實施例。 Next, a second embodiment of the present invention will be described.
本實施例及第一實施例的不同是插入部的設置數量。因此,以下,對於與第一實施例共通的構成及構件是附加相同符號,對於其詳細的說明省略。 The difference between this embodiment and the first embodiment is the number of insertion portions. Therefore, the same components and members as those of the first embodiment are denoted by the same reference numerals, and the detailed description thereof will be omitted.
第7圖,是顯示本實施例的基板剝離裝置200的概略構成的圖。 Fig. 7 is a view showing a schematic configuration of a substrate peeling apparatus 200 of the present embodiment.
如第7圖所示,基板剝離裝置200,是具備:插入部120、及移動機構121、及剝離機構22、及旋轉機構123。 As shown in FIG. 7, the substrate peeling apparatus 200 includes an insertion portion 120, a moving mechanism 121, a peeling mechanism 22, and a rotating mechanism 123.
本實施例的插入部120,是如第7圖所示,包含各別被配置在矩形狀的樹脂基板3的對角線上中的一對的角部3A、3C的第1插入部130及第3插入部132。 The insertion portion 120 of the present embodiment includes the first insertion portion 130 and the first portion of the corner portions 3A and 3C which are respectively disposed on the diagonal of the rectangular resin substrate 3 as shown in FIG. 3 insertion portion 132.
第1插入部130及第3插入部132,是具有相同的構成。在本實施例中,第1插入部130,是具備:刀具130A、及推出部130B。第3插入部132,是具備:刀具132A、及推出部132B。 The first insertion portion 130 and the third insertion portion 132 have the same configuration. In the present embodiment, the first insertion portion 130 includes a cutter 130A and an ejection portion 130B. The third insertion portion 132 includes a cutter 132A and an ejection portion 132B.
移動機構121,是在第1插入部130及第3插入部132被插入樹脂基板3及支撐基板1的界面的狀態下,沿著第7圖中的左右方向(X方向)將第1插入部130及第3插入部132移動。 In the state in which the first insertion portion 130 and the third insertion portion 132 are inserted into the interface between the resin substrate 3 and the support substrate 1 in the moving mechanism 121, the first insertion portion is formed along the horizontal direction (X direction) in Fig. 7 . The 130 and the third insertion portion 132 move.
旋轉機構123,是繞朝第6圖的紙面貫通方向且通過支撐基板1的中心的旋轉軸O周圍將該支撐基板1旋轉。 The rotation mechanism 123 rotates the support substrate 1 around the rotation axis O passing through the center of the support substrate 1 in the direction in which the paper surface passes through the sixth drawing.
接著,對於由本實施例的基板剝離裝置200所產生的基板剝離方法參照第8圖說明。 Next, the substrate peeling method by the substrate peeling apparatus 200 of the present embodiment will be described with reference to FIG.
首先,插入部120,是插入樹脂基板3的角部3A、3C中的與支撐基板1的界面。如第8圖(a)所示,第1插入部130,是將刀具130A從角部3A漸漸地推入地插入界面。另一方面,第3插入部132,是將刀具132A從角部3C漸漸地推入地插入界面。 First, the insertion portion 120 is an interface with the support substrate 1 among the corner portions 3A, 3C of the resin substrate 3. As shown in Fig. 8(a), the first insertion portion 130 is an insertion interface for gradually pushing the cutter 130A from the corner portion 3A. On the other hand, the third insertion portion 132 is an insertion interface in which the cutter 132A is gradually pushed in from the corner portion 3C.
移動機構121,是將刀具130A朝角部3B側(第8圖(a)所示的+X側)移動,並且將刀具132A朝角部3D側(第8圖(a)所示的-X側)移動。由此,可以沿著樹脂基板3的外周形成2個開縫S。 The moving mechanism 121 moves the cutter 130A toward the corner portion 3B side (the +X side shown in Fig. 8(a)), and the cutter 132A faces the corner portion 3D side (the -X shown in Fig. 8(a)). Side) move. Thereby, two slits S can be formed along the outer circumference of the resin substrate 3.
接著,移動機構121,是如第8圖(b)所示,將刀具130A及132A返回至初期位置為止。其後,旋轉機構123,是以旋轉軸O為基準,將支撐基板1朝逆時針旋轉90度。由此,第1插入部130是成為與樹脂基板3的角部3B相面對,第3插入部132是成為與樹脂基板3的角部3D相面對的狀態。 Next, the moving mechanism 121 returns the cutters 130A and 132A to the initial positions as shown in Fig. 8(b). Thereafter, the rotation mechanism 123 rotates the support substrate 1 by 90 degrees counterclockwise with respect to the rotation axis O. Thereby, the first insertion portion 130 faces the corner portion 3B of the resin substrate 3, and the third insertion portion 132 faces the corner portion 3D of the resin substrate 3.
接著,如第8圖(c)所示,第1插入部130,是將刀具130A朝角部3B的界面K漸漸地推入。另一方面,第3插入部132,是將刀具132A朝角部3D的界面K漸漸地推入。 Next, as shown in FIG. 8(c), the first insertion portion 130 gradually pushes the cutter 130A toward the interface K of the corner portion 3B. On the other hand, the third insertion portion 132 gradually pushes the cutter 132A toward the interface K of the corner portion 3D.
接著,移動機構121,是將刀具130A朝角部3C側(第8圖(c)所示的+X側)移動,並且將刀具132A朝角部3A側(第8圖(c)所示的-X側)移動。由 此,可以沿著樹脂基板3的外周形成2個開縫S。 Next, the moving mechanism 121 moves the cutter 130A toward the corner portion 3C side (the +X side shown in Fig. 8(c)), and the cutter 132A faces the corner portion 3A side (Fig. 8(c)). -X side) Move. by Thereby, two slits S can be formed along the outer circumference of the resin substrate 3.
如以上,可以形成將樹脂基板3的外周包圍的4個開縫S。 As described above, four slits S surrounding the outer circumference of the resin substrate 3 can be formed.
形成了開縫S之後,剝離機構22,是將保持部40中的形成有樹脂基板3的開縫S的部分(開縫形成部分)保持。剝離機構22,是藉由插入部120以形成於界面K的開縫S作為基點,將樹脂基板3從支撐基板1漸漸地剝離。 After the slit S is formed, the peeling mechanism 22 holds the portion (slit forming portion) in which the slit S of the resin substrate 3 is formed in the holding portion 40. In the peeling mechanism 22, the resin substrate 3 is gradually peeled off from the support substrate 1 by the insertion portion 120 with the slit S formed at the interface K as a base point.
以上,雖說明了本發明的一實施例,但是沒有限定於上述內容,在不脫離發明主旨的範圍可適宜地變更。例如,在上述實施例中,雖舉例了在支撐基板1的表面1a的全面形成處理膜2的情況例,但是本發明不限定於此。 The embodiment of the present invention has been described above, but it is not limited to the above, and can be appropriately changed without departing from the scope of the invention. For example, in the above-described embodiment, the case where the treatment film 2 is entirely formed on the surface 1a of the support substrate 1 is exemplified, but the present invention is not limited thereto.
又,在上述實施例中,雖舉例藉由形成比支撐基板1更小的樹脂基板3的尺寸,將支撐基板1的表面作為插入部20、120的導引利用的情況的例,但是本發明不限定於此。 Moreover, in the above-described embodiment, the case where the surface of the support substrate 1 is used as a guide for the insertion portions 20 and 120 is exemplified by forming the size of the resin substrate 3 smaller than the support substrate 1, but the present invention is It is not limited to this.
例如,如第9圖(a)所示,利用被配置於支撐基板1的外周部的導引構件80也可以。導引構件80,是具有與形成有支撐基板1中的樹脂基板3的面(表面1a)相同高度的導引面80a。 For example, as shown in FIG. 9( a ), the guide member 80 disposed on the outer peripheral portion of the support substrate 1 may be used. The guiding member 80 is a guiding surface 80a having the same height as the surface (surface 1a) on which the resin substrate 3 in the supporting substrate 1 is formed.
利用這種導引構件80的話,從平面看的狀態,支撐基板1及樹脂基板3的大小是大致相同情況,也如第9圖(b)所示,因為插入部20、120的插入動作是 沿著導引構件80的導引面80a被導引,所以可以在界面將開縫S良好地形成。 With such a guide member 80, the size of the support substrate 1 and the resin substrate 3 is substantially the same as viewed from the plane, as shown in Fig. 9(b), because the insertion operation of the insertion portions 20, 120 is The guide surface 80a of the guide member 80 is guided, so that the slit S can be formed well at the interface.
又,在本實施例中,雖舉例為了變更對於樹脂基板3的插入部120的插入位置,而使用旋轉機構123將支撐基板1旋轉的情況的例,但是本發明不限定於此。例如,藉由旋轉機構123將插入部120本身旋轉90度,且藉由將由移動機構121所產生的插入部120的移動方向變更90度而不需要將支撐基板1旋轉地形成開縫S也可以。 In the present embodiment, the example in which the support substrate 1 is rotated by the rotation mechanism 123 is changed in order to change the insertion position of the insertion portion 120 of the resin substrate 3, but the present invention is not limited thereto. For example, the insertion portion 120 itself is rotated by 90 degrees by the rotation mechanism 123, and the slit S can be formed by rotating the support substrate 1 by changing the moving direction of the insertion portion 120 by the moving mechanism 121 by 90 degrees. .
1‧‧‧支撐基板(支撐體) 1‧‧‧Support substrate (support)
3‧‧‧樹脂基板 3‧‧‧Resin substrate
3A‧‧‧角部 3A‧‧‧ corner
3B‧‧‧角部 3B‧‧‧ corner
3C‧‧‧角部 3C‧‧‧ corner
3D‧‧‧角部 3D‧‧‧ corner
20‧‧‧插入部 20‧‧‧Insert Department
21‧‧‧移動機構 21‧‧‧Mobile agencies
22‧‧‧剝離機構 22‧‧‧Disbonding agency
30‧‧‧第1插入部 30‧‧‧1st insertion
30A‧‧‧刀具 30A‧‧‧Tools
30B‧‧‧推出部 30B‧‧‧Exporting Department
31‧‧‧第2插入部 31‧‧‧2nd insertion
31A‧‧‧刀具 31A‧‧‧Tools
31B‧‧‧推出部 31B‧‧‧Exporting Department
32‧‧‧第3插入部 32‧‧‧3rd Insertion
32A‧‧‧刀具 32A‧‧‧Tools
32B‧‧‧推出部 32B‧‧‧Exporting Department
33‧‧‧第4插入部 33‧‧‧4th insertion
33A‧‧‧刀具 33A‧‧‧Tools
33B‧‧‧推出部 33B‧‧‧Exporting Department
40‧‧‧保持部 40‧‧‧ Keeping Department
100‧‧‧基板剝離裝置 100‧‧‧Substrate stripping device
Claims (17)
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JP2015063895A JP6450620B2 (en) | 2015-03-26 | 2015-03-26 | Substrate peeling apparatus and substrate peeling method |
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JP4626139B2 (en) * | 2003-10-09 | 2011-02-02 | 東レ株式会社 | Circuit board manufacturing method |
JP2008197131A (en) * | 2007-02-08 | 2008-08-28 | Sharp Corp | Device and method of peeling polarizing plate |
JP2010076875A (en) * | 2008-09-25 | 2010-04-08 | Fujifilm Corp | Film peeling device and film peeling method |
WO2010090147A1 (en) * | 2009-02-06 | 2010-08-12 | 旭硝子株式会社 | Method for manufacturing electronic device and separation apparatus used therefor |
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JP2016183016A (en) | 2016-10-20 |
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