TWI661061B - 成膜系統、磁性體部及膜的製造方法 - Google Patents
成膜系統、磁性體部及膜的製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 230000008021 deposition Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 148
- 238000000034 method Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 230000035699 permeability Effects 0.000 claims description 6
- 230000032258 transport Effects 0.000 claims 1
- 230000008020 evaporation Effects 0.000 description 21
- 238000001704 evaporation Methods 0.000 description 21
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 17
- 239000000463 material Substances 0.000 description 16
- 238000003860 storage Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000009434 installation Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001374 Invar Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000010960 cold rolled steel Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
提供一種成膜裝置,可在不會使膜質不均發生下使遮罩長期間密接於基板,此外能以1個腔室應付複數個遮罩圖案,再者可在即使改變遮罩的情況下亦無須交換磁鐵等不提高裝置成本下實現裝置運轉率的提升。
一種成膜系統,在使具有開口的遮罩以配置於基板的與前述遮罩係相反側的磁鐵而拉近於基板側的狀態下在前述基板形成膜,其中在前述磁鐵與前述基板之間,設置使在對應於前述遮罩的開口部的區域的前述磁鐵的磁力比在對應於前述遮罩的非開口部的區域的前述磁鐵的磁力小的磁性體部。
Description
本發明,係有關在將遮罩以磁力予以拉近於基板的狀態下進行成膜的技術。
在透明導電膜的形成中,係從能以均勻的膜厚而形成電阻值、透射率等的特性亦良好的透明導電膜而言,此外從能獲得高的成膜速率而言,廣為採用濺鍍法。在濺鍍法方面,係具有使用濺鍍用金屬遮罩,而進行圖案成膜的方法。
使用濺鍍用金屬遮罩的情況下,在基板的背面側設置磁鐵,使得可使遮罩長期間密接於基板的表面側。
然而,此情況下,遮罩密接用的磁鐵的磁場造成在濺鍍時予以產生異常放電等的影響、材料粒子受到磁場的影響等,使得有時在成膜於基板的膜質方面發生不均。
所以,在例如專利文獻1、2係採行如示於以下的膜質不均對策。
於專利文獻1,係在膜質不均對策方面,已揭露以下
技術:將防磁遮罩設置於玻璃基板與磁鐵之間,從而使通過防磁遮罩後的磁場為250高斯以下。
此外,於專利文獻2,係已揭露採用配合遮罩圖案下的磁鐵配置從而執行膜質不均對策的技術。此外,在專利文獻2,係已揭露:準備複數個濺鍍室,準備配合個別不同的遮罩圖案下的磁鐵從而應付複數個遮罩圖案之旨。
然而,在專利文獻1係使磁場為250高斯以下,故遮罩的密接力變弱,無法負擔長期間的密接。為此,招致裝置運轉率的不良化、遮罩交換費用的增加等。
此外,在專利文獻2,係準備複數個腔室與磁鐵時產生巨額的費用。此外,使用新的遮罩時,係需要磁鐵的交換,招致裝置運轉率的不良化。
[專利文獻1]日本專利特開2003-268530號公報
[專利文獻2]日本專利特開平11-131212號公報
本發明,係鑒於如上述之現狀而創作者,提供一種成膜裝置,可在不會使膜質不均發生下使遮罩長期間密接於基板,此外能以1個腔室應付複數個遮罩圖案,再者可在即使改變遮罩的情況下亦無須交換磁鐵等不提高裝置成本下實現裝置運轉率的提升。
本發明係有鑑於上述的情事而創作者。以下,參照附圖而說明本發明的要旨。
本發明的第1態樣相關的成膜系統,係在使具有開口的遮罩以配置於基板的與前述遮罩係相反側的磁鐵而拉近於基板側的狀態下在前述基板形成膜,其中在前述磁鐵與前述基板之間,設置使在對應於前述遮罩的開口部的區域的前述磁鐵的磁力比在對應於前述遮罩的非開口部的區域的前述磁鐵的磁力小的磁性體部。
本發明的第2態樣相關的磁性體部,係配置於具備保持基板的基板保持部、供於保持具有開口的遮罩用的遮罩保持部、及被設置於與設置前述基板的前述遮罩之側係相反側的磁鐵的成膜裝置的前述磁鐵與前述基板之間而使用,其中在對應於前述遮罩的非開口部的區域,具有磁導率比在對應於前述遮罩的前述開口的區域的磁導率小的區域。
此外,本發明的第3態樣相關的膜的製造方法,係使用具有開口的遮罩而在基板的被成膜面形成膜,其中具有在與前述基板的被成膜面係相反側從前述基板側依序配置磁性體部與磁鐵的程序、在前述基板的被成膜面側配置前述遮罩的程序、及在前述基板的被成膜面隔著前述遮罩而形成膜的程序,且透過前述磁性體部,使前述磁鐵的磁力,在前述遮罩的開口部比前述遮罩的非開口部弱。
本發明係如上述方式而構成,故成為一種成膜裝置,可在不會使膜質不均發生下使遮罩長期間密接於基板,此外能以1個腔室應付複數個遮罩圖案,再者可在即使改變遮罩的情況下亦無須交換磁鐵等不提高裝置成本下實現裝置運轉率的提升。
1‧‧‧基板
4‧‧‧遮罩
5‧‧‧磁鐵
6‧‧‧磁性體部
7‧‧‧磁性體
8‧‧‧基板保持體
[圖1]本實施例的概略說明透視圖。
[圖2]本實施例的遮罩及磁性體部的概略說明透視圖。
[圖3]他例1的磁性體部的概略說明平面圖。
[圖4]他例2的磁性體部的(a)概略說明平面圖、(b)概略說明剖面圖。
[圖5]示出本實施例的處理室的配置的示意說明圖。
[圖6]示出處理室的配置例的示意說明圖。
[圖7]示出處理室的配置例的示意說明圖。
[圖8]示出處理室的配置例的示意說明圖。
[圖9]示出處理室的配置例的示意說明圖。
[圖10]蒸鍍裝置的示意說明正面圖。
針對應為適合的本發明的實施形態,根據圖式示出本
發明的作用而簡單進行說明。
透過磁鐵5,將遮罩4予以拉近至基板1側的狀態下進行成膜。在遮罩方面,係採用被磁鐵拉近的以磁性體而形成者。
此情況下,可透過磁性體部6,而進行遮罩4的拉近、減小在無助於密接的遮罩4的開口部的磁力等,可防止受到磁鐵5所致的磁場的影響而在膜質、膜厚等方面發生不均。此外,在遮罩4的非開口部處磁力降低的程度,係比遮罩4的開口部小,遮罩4的非開口部係良好地被透過磁鐵5而拉近至基板1而維持該狀態。
亦即,磁性體部6,係實現以下狀態者:一方面在無助於遮罩4的吸引的對應於遮罩4的開口部的區域,弱化從磁鐵5所產生的磁力,另一方面在有助於遮罩4的吸引的對應於遮罩4的非開口部的區域,使磁力盡量不降低。為此,比起如揭露於專利文獻1般整體地將磁場弱化的構成,可一面磁鐵吸引遮罩的力的降低一面抑制磁鐵5所致的磁場對成膜區域造成影響,使得可使膜質不均的防止與遮罩4及基板1的長期間密接同時成立。
此外,只要在存放室準備複數種的磁性體部6,即可配合使用的遮罩4的開口形狀(遮罩圖案)而酌情交換磁性體部6。為此,無須暫時停止裝置而交換磁鐵5,或準備複數個腔室,使得可應付複數個遮罩圖案,可相應提升運轉率,再者可削減裝置成本。
基於圖式說明有關本發明的具體實施例。
本實施例相關的成膜裝置,係在真空室內,對向配設保持基板1的基板保持部、及設置靶材(成膜源)2的陰極(成膜源設置部)3。並且,為一種濺鍍裝置,一面將Ar等的惰性氣體導入於真空室內,一面使在基板1與陰極3之間施加直流高電壓而離子化的Ar衝撞於靶材2從而使靶材材料成膜於基板1。此外,亦可採用以下構成:除了惰性氣體以外一面導入O2/N2等的反應性氣體一面進行反應性濺鍍,形成ITO等的化合物膜。
具體而言,本實施例,係如圖示於圖1,具有配置於前述基板1的前述陰極3側的遮罩4、及配置於前述基板1的與前述陰極3係相反側的磁鐵5的構成,透過因此磁鐵5而產生的磁力將前述遮罩4予以拉近至前述基板1側而予以密接於前述基板1。
遮罩4方面,係採用周知的磁性體遮罩,例如採用由厚度0.2~1mm程度的invar材(Ni-Fe系合金)所成者。此外,磁鐵5,係構成為:在基底部的表面,以使遮罩4整體拉近的方式將複數個永久磁鐵格子狀地並置。亦可代替永久磁鐵而採用電磁鐵。圖中,符號9,係遮罩框。
接著,說明有關在本發明所使用的磁性體部6、磁性體7、基板保持體8。
本實施例,係在前述磁鐵5與前述基板1之間,設置磁性體部6,其係構成為:從前述磁鐵5所產生的磁力之
中,使在不予以產生吸引力的前述遮罩4的開口部的磁力比在予以產生吸引力的前述遮罩4的非開口部的磁力為弱。具體而言,磁性體部6,係在對應於遮罩4的非開口部的區域,具有磁導率比在對應於遮罩4的開口的區域的磁導率低的區域。
於圖2示出磁性體部6的構成例。磁性體部6,係僅在基板保持體8的對應於前述遮罩4的開口部的位置,分別具備具有防磁性的板狀的磁性體7,在對應於前述遮罩4的非開口部的位置係不具有磁性體7。作成如此的構成,使得可構成為:減低在前述遮罩4的開口部的磁力,使在前述遮罩4的非開口部的磁力幾乎不減低。
更詳細而言,本實施例,係在前述磁鐵5與前述基板1之間設置保持前述基板1的基板保持體8,在此基板保持體8上設置前述磁性體7而構成前述磁性體部6。磁性體7係亦可構成為埋設於基板保持體8。磁性體7方面係磁導率高即可,材質方面係由高導磁合金、SPCC(冷間壓延鋼板)、SS400(一般構造用壓延鋼板)不銹鋼(SUS440、SUS430)所成者為優選。此外,在遮罩的開口部的磁性體7的厚度,係2mm~5mm程度為優選。基板保持體8方面係採用非磁性體的鋁製者。基板保持體8係在保持基板1的狀態下被透過機械手臂11而搬送。另外,採基板保持體8下的基板保持構造的圖示係省略。
磁性體7,係透過螺絲等而裝卸自如地設於基板保持體8上,構成為可依前述磁鐵5的磁力及前述遮罩4的開
口形狀而變更配置。
此外,亦可如圖示於圖3的他例1,將對應於遮罩4的開口部而配置的複數個磁性體以連結部互相連結,而以與基板保持體8係不同形體而構成磁性體部6。具體而言,在可將遮罩4所具有的複數個開口部防磁的寬度的磁性體7的與前述遮罩4的非開口部對應的位置,設置複數個貫通口10而構成拉近部即可。或者,對應於遮罩4的開口部而排列複數個可將遮罩4的開口部防磁的寬度的磁性體7,在與遮罩4的非開口部對應的位置,透過連結部彼此予以局部連結而構成亦可。此情況下,未被連結的部分成為貫通口。另外,設於拉近部的貫通口10的形狀係非特別限定者,可為如圖示於圖3的圓孔亦可為多角形狀孔。
再者,亦可如圖示於圖4的他例2,採取以下構成:並非在對應於遮罩4的非開口部的位置設置貫通孔,而是使對應於遮罩4的非開口部的位置的磁性體7的厚度,比對應於遮罩4的開口部的位置的厚度薄(作成1/2程度)。
此外,使磁性體部6與基板保持體8係不同形體的情況下,係在基板保持體8與基板1之間配置磁性體部6。此外,採與基板保持體8不同形體的情況下,磁性體部6構成為板狀,而可使用前述基板或前述遮罩搬送用的機械手臂11進行搬送。
將磁性體部6構成為可使用機械手臂11進行搬送,
使得可將複數種的磁性體部6收納於基板保持體存放室,並依而以機械手臂11自動交換。
例如,如圖示於圖5般在搬送室12的周圍,設置成膜室13、基板保持體存放室14、遮罩存放室15作為處理室,在基板保持體存放室14收納對應於複數種的遮罩圖案下的複數種的基板保持體8(磁性體部6),使得可在將遮罩4交換為不同的遮罩圖案者時,一併交換基板保持體8(磁性體部6),可實現在不使裝置停止下交換為對應於複數種的遮罩圖案的磁性板部6的成膜裝置,可相應使裝置運轉率提升。
此外,不限於圖5的構成,亦可如圖示於圖6~9般構成為在搬送室12的周圍設置各處理室。另外,圖9,係設置兼用基板保持體存放室與遮罩存放室下的存放室16的構成。無論任一構成,皆使得可使用機械手臂11,而在不使裝置停止下自動交換基板保持體8(磁性體部6),可使裝置運轉率提升。
此外,本發明,係亦可使用於:加熱收容於成膜源的材料,使材料蒸鍍於基板而進行成膜的成膜裝置(蒸鍍裝置)。
作成使形成既定的遮罩圖案的遮罩利用磁鐵的磁力而拉近於基板的狀態,將從成膜源所飛散的材料粒子,可使用於隔著前述遮罩而在基板形成膜的成膜裝置(蒸鍍裝置)。
結果,從成膜源所飛散的材料粒子,可減低受到磁鐵
所致的磁力的影響,可抑制在形成於基板的膜的膜質、膜厚等發生不均。
圖10,係針對應用本發明下的蒸鍍裝置進行說明的示意圖。
在本實施例所說明的成膜裝置,係在保持減壓環境的真空槽20內,設有:設置放出被氣化的成膜材料的蒸發源(成膜源)2的蒸發源設置部(成膜源設置部)3、監控從蒸發源2所放出的材料的蒸發率的膜厚監控器23、設於真空槽20外的膜厚計22、對設於蒸發源2的加熱裝置進行控制的電源21、保持基板1的基板保持部25、使用於基板搬送時並在裝置內與基板保持部25連結的基板保持體8、保持遮罩4的遮罩保持部24、是遮罩保持部的一部分並載置遮罩的遮罩框9、使遮罩4拉近至基板1側的磁鐵5、減弱來自磁鐵的磁力的磁性體7、具備磁性體7的磁性體部6、使磁鐵5升降的磁鐵升降機構26。
在本實施例,蒸發源2,係具備複數個對基板1的成膜面放出材料的放出孔的構造,設有相對於成膜面予以相對移動的蒸發源移動機構。蒸發源2係不限於此,配合基板1或遮罩4的圖案等,而酌情選定蒸發源即可,例如亦可使用點源、於小型的材料收納部連接擴散室並在擴散室具備複數個放出材料的放出孔的構造的蒸發源等。
基板保持部25,係除了保持基板1以外,具有調整基板1的位置的基板移動機構,可調節遮罩4、蒸發源2等的相對位置。遮罩保持部24,係除了保持遮罩4或遮
罩框9以外,具有調整基板1的位置的遮罩移動機構,可調節基板1、蒸發源2等的相對位置。
接著說明以蒸鍍裝置進行成膜的程序。
預先在基板1與遮罩4,係設置對準標示。
設置對準標示的遮罩4,係被透過搬送手段(未圖示)而搬入真空槽20內,載置於遮罩保持部24。遮罩保持部24,係具有移動機構,使遮罩4移動至既定的位置。
蒸發源2,係為了氣化材料,而透過電源21控制設於蒸發源2的加熱裝置。
此外,亦可採取在蒸發源2的材料放出側設置遮蔽器,透過遮蔽器的開閉,而控制成膜。
設置對準標示的基板1,係在被保持於基板保持體8的狀態下被透過搬送手段而搬入真空槽20內,載置於基板保持部25。
在此基板保持體8,亦可設置磁性體7或以磁性體7而構成的磁性體部6。
或者,不在基板保持體8設置磁性體部6的情況下,係將磁性體7或以磁性體7而構成的磁性體部6設於基板1與磁鐵5之間。具體而言,在基板保持體8之上,依磁性體部6、基板1的順序,配置為基板1的形成膜之側的面(被成膜面)朝向與前述基板保持體8係相反側,透過夾具等的固定器具,而將基板保持體8、基板1、磁性體部6彼此固定。此時,使基板1的被成膜面為水平而進行
時作業變簡單故為優選。
之後,以基板1的被成膜面朝向蒸發源2側的方式按基板保持體8各者設置於基板保持部25,透過設於基板保持部25的移動機構,而進行遮罩4與基板1的對準。在本實施例,係利用設於遮罩4的對準標示與設於基板1的對準標示,而進行遮罩4與基板1的對準。
此外,亦可基板1被搬入真空槽20內,並被透過基板保持部25而配置於既定的位置後,透過遮罩保持部24而移動遮罩4,進行遮罩4與基板1的對準。
對準結束後,透過磁鐵升降機構26使磁鐵5接近基板1及磁性體部6。藉此,作成透過從磁鐵5所產生的磁力使遮罩4拉近至基板1的狀態。
之後,進行打開蒸發源2的遮蔽器等而開始成膜,將對應於遮罩4的開口部的圖案的膜形成於基板1。晶體振盪器等的膜厚監控器23,係計測蒸發率,以膜厚計22換算為膜厚。持續蒸鍍直到以膜厚計22所換算的膜厚成為目標膜厚為止。
膜厚計22到達目標膜厚後,關閉蒸發源2的遮蔽器而使蒸鍍結束。之後,將磁鐵5透過磁鐵升降機構26而從基板1及磁性體部6放掉後,透過搬送手段將基板1搬出至真空槽20外,搬入下個基板1並以同樣的程序進行成膜。
遮罩4,係每進行複數個基板1的蒸鍍而進行交換。遮罩4的更換頻度,係可依往遮罩4的成膜材料的堆積情
形等,而酌情決定。
將基板保持體8、基板1、磁性體部6彼此固定的程序,係雖使基板1的被成膜面為水平而進行為優選,惟之後的基板搬送程序、對準程序、成膜程序等,係使基板1的被成膜面為鉛直而進行為優選。另外,此處所謂的水平及鉛直,係容許±30°的範圍的誤差者。
另外,本發明,係非限於本實施例者,各構成要件的具體構成係可酌情設計者。
Claims (14)
- 一種成膜系統,在使具有開口的遮罩以配置於基板的與前述遮罩係相反側的磁鐵而拉近於基板側的狀態下在前述基板形成膜,特徵在於:在前述磁鐵與前述基板之間,設置使在對應於前述遮罩的開口部的區域的前述磁鐵的磁力比在對應於前述遮罩的非開口部的區域的前述磁鐵的磁力小的磁性體部。
- 如申請專利範圍第1項之成膜系統,其具有將前述基板與前述磁性體部保持而搬送的基板保持體。
- 如申請專利範圍第1項之成膜系統,其中,前述基板保持體具有磁性體,兼作前述磁性體部。
- 如申請專利範圍第3項之成膜系統,其中,前述磁性體被裝卸自如地設置,可依前述磁鐵的磁力及前述遮罩的開口形狀而變更配置。
- 一種磁性體部,設於如申請專利範圍第1~4項中任一項的成膜系統,特徵在於:前述磁性體部,係在對應於前述遮罩的開口部的區域各者的整體設置磁性體,在對應於前述遮罩的非開口部的區域的至少一部分係未設置磁性體。
- 一種磁性體部,設於如申請專利範圍第1~4項中任一項的成膜系統,特徵在於:前述磁性體部,係以磁性體而構成,在對應於前述遮罩的開口部的區域,比對應於前述遮罩的非開口部的區域厚。
- 如申請專利範圍第5項之磁性體部,其係構成為板狀。
- 如申請專利範圍第6項之磁性體部,其係構成為板狀。
- 一種磁性體部,配置於具備保持基板的基板保持部、供於保持具有開口的遮罩用的遮罩保持部、及被設置於與設置前述基板的前述遮罩之側係相反側的磁鐵的成膜裝置的前述磁鐵與前述基板之間而使用,特徵在於:在對應於前述遮罩的非開口部的區域,具有磁導率比在對應於前述遮罩的前述開口的區域的磁導率低的區域。
- 如申請專利範圍第9項之磁性體部,其中,在對應於前述遮罩的開口部的區域各者的整體設置磁性體,在對應於前述遮罩的非開口部的區域的至少一部分係未設置磁性體。
- 如申請專利範圍第9項之磁性體部,其係以對應於前述遮罩的大小的磁性體而構成,在對應於前述遮罩的開口部的區域,比對應於前述遮罩的非開口部的區域厚。
- 一種膜的製造方法,使用具有開口的遮罩而在基板的被成膜面形成膜,特徵在於:具有:在與前述基板的被成膜面係相反側,從前述基板側依序配置磁性體部與磁鐵的程序;在前述基板的被成膜面側配置前述遮罩的程序;和在前述基板的被成膜面隔著前述遮罩而形成膜的程序;其中,透過前述磁性體部,使前述磁鐵的磁力,在前述遮罩的開口部比前述遮罩的非開口部弱。
- 如申請專利範圍第12項之膜的製造方法,其中,在與前述基板的被成膜面係相反側,從前述基板側依序配置磁性體部與磁鐵的程序包含:在基板保持體之上,依前述磁性體部、前述基板的順序而配置,將前述基板的被成膜面朝與前述基板保持體係相反側而固定的程序,進一步具備搬送固定前述磁性體部與前述基板的基板保持體的程序。
- 如申請專利範圍第13項之膜的製造方法,其中,對於將前述基板的被成膜面朝與前述基板保持體係相反側而固定的程序,使前述基板的被成膜面為水平而進行,對於搬送固定前述磁性體部與前述基板的基板保持體的程序,使前述基板的被成膜面為鉛直而進行。
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