TWI660445B - 基板處理裝置、半導體裝置之製造方法及程式 - Google Patents

基板處理裝置、半導體裝置之製造方法及程式 Download PDF

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TWI660445B
TWI660445B TW106144414A TW106144414A TWI660445B TW I660445 B TWI660445 B TW I660445B TW 106144414 A TW106144414 A TW 106144414A TW 106144414 A TW106144414 A TW 106144414A TW I660445 B TWI660445 B TW I660445B
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tray
substrate
processing apparatus
wafer
plasma
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TW106144414A
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TW201916228A (zh
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吉野晃生
大橋直史
高崎唯史
松井俊
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日商國際電氣股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract

本發明提供一種於將複數個基板呈圓周狀配置之類型之裝置中處理效率亦較高之技術。
本發明提供一種技術，其具有：托盤，其具有供基板載置之蓄熱部；基板搬送部，其具有旋轉軸、及支撐於上述旋轉軸之旋轉板，且構成為可於上述旋轉板載置上述托盤；複數個基台，其等係以上述旋轉軸為中心配置為圓周狀；及加熱器，其設置於上述基台之各者。

Description

基板處理裝置、半導體裝置之製造方法及程式
本發明係關於一種基板處理裝置、半導體裝置之製造方法及程式。
基板處理裝置存在為了提高生產效率而對複數個基板一併進行處理之類型之裝置。例如，存在於一個處理室中將複數個基板呈圓周狀配置之類型(專利文獻1)。
此處，記載有將組合基板加熱台與簇射頭而成之處理室呈圓周狀配置、於各處理室中對基板進行加熱並且以電漿進行處理、以及為了將基板移動至鄰接之處理室而使旋轉托盤公轉等。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利特開2012-222024
伴隨近年來之微細化，要求於基板面內均勻地形成薄膜。為了實現該要求，基板處理裝置係以均勻地加熱基板面內並且利用電漿進行處理之方式構成。
因此，本揭示之目的在於提供一種於將複數個基板呈圓周狀配置之類型之裝置中處理效率亦較高之技術。
本發明提供一種技術，其具有：托盤，其具有供基板載置之蓄熱部；基板搬送部，其具有旋轉軸、及支撐於上述旋轉軸之旋轉板，且構成為可於上述旋轉板載置上述托盤；複數個基台，其等係以上述旋轉軸為中心配置為圓周狀；及加熱器，其設置於上述基台之各者。
根據本揭示，可提供一種於將複數個基板呈圓周狀配置之類型之裝置中處理效率亦較高之技術。
100‧‧‧晶圓(基板)
101‧‧‧共通源極線
102、102(1)~102(m)‧‧‧絕緣膜
104、104(1)~104(m)‧‧‧犧牲膜
200‧‧‧基板處理裝置
201(201b~201d)‧‧‧處理室
202‧‧‧容器(框體)
203‧‧‧蓋部
204‧‧‧底部
205‧‧‧基板搬入搬出口
207‧‧‧頂起銷
208‧‧‧閘閥
209(209a~209d)‧‧‧處理空間
210(210a~210d)‧‧‧基台
211(211a~211d)‧‧‧托盤載置面
212(212a~212d)‧‧‧頂起銷支撐部
213(213a~213d)‧‧‧加熱器
215(215a~215d)‧‧‧偏壓電極
216(216a~216d)‧‧‧基板升降部
217(217a~217d)‧‧‧軸
220‧‧‧基板旋轉部
221‧‧‧旋轉軸
222‧‧‧旋轉板
222a‧‧‧爪
223‧‧‧旋轉板升降部
224(224a~224d)‧‧‧孔部
225‧‧‧開關；箭頭(順時針方向)
226、404‧‧‧地線
230(230a~230d)‧‧‧簇射頭
231a、231c‧‧‧氣體導入孔
232(232a~232d)‧‧‧絕緣環
233(233b、233d)‧‧‧氣體導入孔
240‧‧‧臂
250(250a~250d)‧‧‧托盤
251‧‧‧蓄熱部
252‧‧‧去靜電電極
253‧‧‧空間
254‧‧‧孔
255‧‧‧端子
256‧‧‧貫通孔
257、257a‧‧‧晶圓載置面
260(260a~260d)‧‧‧排氣系統
261(261a~261d)‧‧‧排氣孔
262(262a~262d)‧‧‧排氣管
266(266a~266d)‧‧‧APC
267(267a~267d)、302(302a~302c)、314、324、342(342b、342d)、354、364‧‧‧閥
269‧‧‧DP
270‧‧‧上位裝置
280‧‧‧控制器
280a‧‧‧運算部
280b‧‧‧暫時記憶部
280c‧‧‧記憶部
280d‧‧‧I/O端口
280e‧‧‧發送接收指示部
281‧‧‧輸入輸出裝置
282‧‧‧外部記憶裝置
283‧‧‧接收部
300‧‧‧第一氣體供給部(第1處理氣體供給部)
301、341‧‧‧共通氣體供給管
303(303a、303c)、313、323、343(343a~343d)、353、363‧‧‧質量流量控制器
310‧‧‧第一氣體供給系統
311‧‧‧第一氣體供給管
312‧‧‧第一氣體源
320‧‧‧第二氣體供給系統
321‧‧‧第二氣體供給管
322‧‧‧第二氣體源
340‧‧‧第二氣體供給部
350‧‧‧第三氣體供給系統
351‧‧‧第三氣體供給管
352‧‧‧第三氣體源
360‧‧‧第四氣體供給系統
361‧‧‧第四氣體供給管
362‧‧‧第四氣體源
400‧‧‧電漿生成部
400a‧‧‧第一電漿生成部
400b‧‧‧第二電漿生成部
400c‧‧‧第三電漿生成部
400d‧‧‧第四電漿生成部
401(401a~401d)‧‧‧高頻電力供給線
402(402a~402d)‧‧‧高頻電源
403(403a~403d)‧‧‧整合器
圖1係對實施形態之基板處理裝置進行說明之說明圖。
圖2係對實施形態之基板處理裝置進行說明之說明圖。
圖3係對實施形態之基板處理裝置進行說明之說明圖。
圖4係對實施形態之基板處理裝置進行說明之說明圖。
圖5係對實施形態之基板處理裝置進行說明之說明圖。
圖6係對實施形態之基板處理裝置進行說明之說明圖。
圖7係對實施形態之基板處理裝置進行說明之說明圖。
圖8係對實施形態之晶圓之處理狀態進行說明之說明圖。
圖9係對實施形態之晶圓之處理流程進行說明之說明圖。
以下，對本發明之實施形態進行說明。
首先，使用圖1，對本實施形態中之基板處理裝置200進行說明。
(基板處理裝置)
(處理容器)
如圖例所示，基板處理裝置200具備容器202。容器202亦稱為處理模組。容器202例如構成為橫剖面為矩形且扁平之密閉容器。又，容器202例如由鋁(Al)或不鏽鋼(SUS)等金屬材料構成。於容器202內，形成有對矽晶圓等晶圓100進行處理之處理室201。處理室201係由下述之簇射頭230、基台210等構成。
於容器202之側面，設置有鄰接於閘閥208之基板搬入搬出口205，晶圓100經由基板搬入搬出口205而於與未圖示之搬送室之間移動。
於處理室201中，配置有對下述托盤250進行加熱之基台210。基台210以下述旋轉軸221為中心，呈圓周狀地配置有複數個。使用圖2對基台210之配置進行說明。圖2係自上方觀察基板處理裝置200、尤其是旋轉板222附近所得之圖。臂240係配置於處理容器202之外部，具有將晶圓100向處理容器202之內外移載之功能。再者，B-B'上之縱剖視圖相當於圖1。
基台210設置有至少4個。具體而言，如圖2記載般，自與基板搬入搬出口205對向之位置起沿順時針方向配置有基台210a、基台210b、基台210c、基台210d。搬入至容器202之晶圓100係以基台210a、基台210b、基台210c、基台210d之順序移動。
基台210主要具有：分別載置晶圓100之托盤載置面211(托盤載置面211a至托盤載置面211d)、偏壓電極215(偏壓電極215a至偏壓電極215d)、及支撐基台210之軸217(軸217a至軸 217d)。進而，具有作為加熱源之加熱器213(213a至213d)。於基台210，在與頂起銷207對應之位置分別設置有供頂起銷207貫通之貫通孔。軸217貫通處理容器202之底部204。軸217與處理容器202絕緣。
以貫通底部204之方式設置有頂起銷207。頂起銷207係配置於可通過設置於基台210之貫通孔、及設置於下述托盤250之貫通孔之位置。頂起銷207之頂端於基板搬入/搬出時等支撐晶圓100。
於頂起銷207之下端，設置有頂起銷支撐部212(212a至212d)。於各頂起銷支撐部212設置有基板升降部216(216a至216d)。基板升降部216使頂起銷207升降。頂起銷支撐部212、基板升降部216係與各基台210a至210d相對應地設置。
於處理容器202之蓋部203、且與各托盤載置面211對向之位置，分別設置有作為氣體分散機構之簇射頭230(230a至230d)。自上方觀察時，如圖3記載般，配置有複數個簇射頭230。簇射頭230係介隔絕緣環232(232a至232d)而支撐於蓋部203。藉由絕緣環232而將簇射頭230與處理容器202絕緣。
如圖3記載般，於各簇射頭230設置有氣體導入孔。具體而言，於簇射頭230a設置有氣體導入孔231a，於簇射頭230b設置有氣體導入孔233b，於簇射頭230c設置有氣體導入孔231c，於簇射頭230d設置有氣體導入孔233d。氣體導入孔231a、231c與下述共通氣體供給管301連通。氣體導入孔233b、233c與下述共通氣體供給管341連通。再者，圖3中之A-A'線上之縱剖視圖相當於圖1。
將各簇射頭230與各托盤250之間之空間稱為處理空間209。於本實施形態中，將簇射頭230a與托盤250a之間之空間稱為處理空間209a。將簇射頭230b與托盤250b之間之空間稱為處理空間209b。將簇射頭230c與托盤250c之間之空間稱為處理空間209c。將簇射頭230d與托盤250d之間之空間稱為處理空間209d。
又，將構成處理空間209之構造稱為處理室201。於本實施形態中，將構成處理空間209a且至少具有簇射頭230a及基台210a之構造稱為處理室201a。將構成處理空間209b且至少具有簇射頭230b及基台210b之構造稱為處理室201b。將構成處理空間209c且至少具有簇射頭230c及基台210c之構造稱為處理室201c。將構成處理空間209d且至少具有簇射頭230d及基台210d之構造稱為處理室201d。
再者，此處記載為處理室201a至少具有簇射頭230a及基台210a，但只要為構成對晶圓100進行處理之處理空間209a之構造即可。毋庸置疑，根據裝置構造不同，並不限定於簇射頭230a等。其他處理室亦同樣。
如圖2記載般，各基台210係以基板旋轉部220之旋轉軸221為中心配置。於旋轉軸221上設置有旋轉板222。又，旋轉軸221係以貫通處理容器202之底部204之方式構成，於處理容器202之外側且與旋轉托盤不同之側設置有旋轉板升降部223。旋轉板升降部223使旋轉軸221升降或旋轉。藉由旋轉板升降部223而可與各基台210獨立地進行升降。旋轉方向例如係沿圖2中之箭頭225之方向(順時針方向)旋轉。將旋轉軸221、旋轉板222、旋轉板升降部223總稱為基板旋轉部。再者，基板旋轉部220亦稱為基 板搬送部。旋轉板升降部223如下所述亦使托盤250升降，因此亦稱為托盤升降部。
又，亦可將基板升降部、旋轉板升降部之任一組合、或所有組合總稱為升降部。
旋轉板222例如構成為圓板狀。於旋轉板222之外周端，設置有與基台210相同數量之孔部224(224a至224d)，上述孔部224(224a至224d)至少具有與托盤載置面211相同程度之直徑。進而，旋轉板222具有朝向孔部224之內側突出之複數個爪。爪係以支撐托盤250之背面之方式構成。於本實施形態中，將托盤250載置於孔部224係表示載置於爪。
藉由使旋轉軸221上升，而使旋轉板222位於高於托盤載置面211之位置，此時，載置於托盤載置面211上之托盤250由旋轉板222之爪拾取。進而，藉由使旋轉軸221旋轉，而使旋轉板222旋轉，使已被拾取之托盤250移動至下一托盤載置面211上。例如，原本載置於托盤載置面211b之托盤250移動至托盤載置面211c上。其後，使旋轉軸221下降而使旋轉板222下降。此時，下降至孔部224位於較托盤載置面211更下方為止，將托盤250載置於托盤載置面211上。
構成為於旋轉軸221中與旋轉板222不同之側電性連接有開關225。開關225之一方電性連接於旋轉板222，另一方連接於地線226。因此，旋轉板222係經由旋轉軸221、開關225而連接於地線226。
(排氣系統)
對將容器202之環境排氣之排氣系統260進行說明。排氣系統260係以與各處理空間209(209a至209d)相對應之方式設置。例如，處理空間209a與排氣系統260a相對應，處理空間209b與排氣系統260b相對應，處理空間209c與排氣系統260c相對應，處理空間209d與排氣系統260d相對應。
排氣系統260具有與排氣孔261(261a至261d)連通之排氣管262(262a至262d)，還具有設置於排氣管262之APC(Auto Pressure Controller，自動壓力控制器)266(266a至266d)。APC266具有可調整開度之閥體(未圖示)，根據來自控制器280之指示而調整排氣管262之導流。又，於排氣管262中APC266之上游側，設置有閥267(267a至267d)。
將排氣管262與閥267、APC266總稱為排氣系統260。
進而，將排氣管262、閥267、APC266總稱為排氣部。於排氣管262之下游設置有DP(Dry Pump，乾式泵)269。DP269經由排氣管262而將處理室201之環境排氣。於本實施形態中，針對每個排氣系統260設置有DP269，但並不限定於此，亦可使各排氣系統共通。
(托盤)
繼而，使用圖4對托盤250之詳細構造進行說明。圖4表示將托盤250載置於旋轉板222之狀態。托盤250主要具有蓄熱部251及去靜電電極252。於蓄熱部251之內部構成空間253。於空間253之底部配置有去靜電電極252。即，蓄熱部251係以覆蓋去靜電電極252之方式設置。於蓄熱部251之表面，具有載置晶圓100之晶 圓載置面257。進而，具有貫通托盤250之貫通孔256。貫通孔256係供頂起銷207貫通之孔。
蓄熱部251當於基台210載置有托盤250時，蓄積自加熱器213傳導之熱。蓄熱部251具有耐電漿性之性質，例如由不透明石英構成。如下所述，蓄熱部251維持晶圓100之溫度。
去靜電電極252具有對當處理空間209中生成電漿時帶電之托盤250進行去靜電的作用。去靜電電極252例如由SiC(碳化矽)構成。去靜電電極252構成為圓盤狀。去靜電電極252之直徑例如設為略大於晶圓100之直徑之程度。
於去靜電電極252之熱膨脹率高於蓄熱部251之熱膨脹率之情形時，於去靜電電極252之側面及上表面與蓄熱部251間設置間隙。由於蓄熱部251以覆蓋去靜電電極252之方式構成，故而去靜電電極252不會暴露於處理空間209中產生之電漿。
於蓄熱部251之底設置有孔254，且於該孔254貫通有端子255。端子255為與去靜電電極252同樣之材質，例如由SiC構成。去靜電電極252與端子255電性連接。因此，去靜電電極252係經由端子255、旋轉板222、及開關225而連接於地線226。於本實施形態中，將去靜電電極252與端子255總稱為去靜電部。
端子255係設置於在水平方向上與晶圓100不重疊之位置、例如較晶圓100之直徑更外側。其次，對其理由進行說明。端子255係藉由加熱器213或蓄熱部251而被加熱。假設於晶圓100之下方配置有端子255之情形時，晶圓100會因端子255中蓄積之熱而被局部加熱。由於晶圓100受到經局部加熱之端子255之熱影響，故難以使晶圓100之溫度均勻。另一方面，若將端子255配置 於與晶圓100不重疊之位置，則可使端子255所產生之熱影響變少，因此不會被局部加熱。因此，可均勻地加熱晶圓100。
孔254中旋轉板222側係以由旋轉板222封閉之方式配置托盤250。於圖4中，由旋轉板222之爪222a封閉。藉由設為此種構造，而防止晶圓處理時生成之電漿滲入至孔254與空間253。
如此，去靜電電極252、端子255不會暴露於電漿，因此去靜電電極252、端子255不會被電漿蝕刻。因此，可防止蝕刻所導致之微粒之產生等。
此處，對假定不存在托盤250之情形之比較例進行說明。如上所述，於本裝置形態下，於每個基台210設置有加熱器213。換言之，於鄰接之基台210之間不存在加熱器213。因此，擔心於晶圓100向鄰接之基台210移動之期間，晶圓100之溫度降低。尤其，框體202內為抽真空之狀態，因此溫度之降低明顯。若晶圓溫度降低，則如下所述，會產生生產性之降低或晶圓之撓曲等。因此，於本實施形態中，於托盤250設置蓄熱部251，藉此，即便於向鄰接之基台210移動之期間，亦可維持晶圓100之溫度。
(氣體供給部)
(第一氣體供給部300)
繼而，使用圖5對第一氣體供給部300進行說明。此處，對連接於氣體導入孔231(231a、231c)之第一處理氣體供給部300進行說明。
簇射頭230a、230c以氣體導入孔231a、231c與共通氣體供給管301連通之方式，經由閥302(302a、302c)、質量流量 控制器303(303a、303c)而連接於共通氣體供給管301。對各處理室之氣體供給量係使用閥302(302a、302c)、質量流量控制器303(303a、303c)而調整。於共通氣體供給管301，連接有第一氣體供給管311、第二氣體供給管321。
(第一氣體供給系統)
於第一氣體供給管311，自上游方向起依序設置有第一氣體源312、作為流量控制器(流量控制部)之質量流量控制器(MFC)313、及作為開閉閥之閥314。
第一氣體源312為含有第一元素之第一氣體(亦稱為「含第一元素氣體」)源。含第一元素氣體為原料氣體、即處理氣體之一。此處，第一元素為矽(Si)。即，含第一元素氣體為含矽氣體。具體而言，作為含矽氣體，使用二氯矽烷(SiH2Cl2；亦稱為DCS)或六氯乙矽烷(Si2Cl6；亦稱為HCDS)氣體。
主要藉由第一氣體供給管311、質量流量控制器313、閥314而構成第一氣體供給系統310(亦稱為含矽氣體供給系統)。
(第二氣體供給系統)
於第二氣體供給管321，自上游方向起依序設置有第二氣體源322、作為流量控制器(流量控制部)之質量流量控制器(MFC)323、及作為開閉閥之閥324。
第二氣體源322為含有第二元素之第二氣體(以下，亦稱為「含第二元素氣體」)源。含第二元素之氣體為處理氣體之 一。再者，含第二元素氣體亦可認為係反應氣體。
此處，含第二元素氣體含有不同於第一元素之第二元素。第二元素例如為氧(O)。於本實施形態中，含第二元素氣體例如為含氧氣體。具體而言，作為含氧氣體，使用臭氧(O3)氣體。
主要藉由第二氣體供給管321、質量流量控制器323、及閥324而構成第二氣體供給系統320(亦稱為反應氣體供給系統)。
再者，將第一氣體供給系統、第二氣體供給系統之任一者或其組合稱為第一氣體供給部300。
(第二氣體供給部340)
繼而，使用圖6對第二氣體供給部340進行說明。此處，對連接於各氣體導入孔233之第二氣體供給部340進行說明。
簇射頭230b、230d以氣體導入孔233b、233d與共通氣體供給管341連通之方式，經由閥342(342b、342d)、質量流量控制器343(343a至343d)而連接於共通氣體供給管301。對各處理室之氣體供給量係使用閥342(342b、342d)、質量流量控制器343(343b、343d)而調整。於共通氣體供給管341連接有第三氣體供給管351、第四氣體供給管361。
(第三氣體供給系統)
於第三氣體供給管351，自上游方向起依序設置有第三氣體源352、作為流量控制器(流量控制部)之質量流量控制器(MFC)353、及作為開閉閥之閥354。
第三氣體源352為含有第一元素之第一氣體(亦稱為「含第一元素氣體」)源。與第一氣體源312同樣地，使用矽系氣體。第三氣體源352亦可與第一氣體源312共用。
主要藉由第三氣體供給管351、質量流量控制器353、及閥354而構成第三氣體供給系統350(亦稱為含矽氣體供給系統)。
(第四氣體供給系統)
於第四氣體供給管361，自上游方向起依序設置有第四氣體源362、作為流量控制器(流量控制部)之質量流量控制器(MFC)363、及作為開閉閥之閥364。
第四氣體源362為含有第三元素之第三氣體(以下，亦稱為「含第三元素氣體」)源。含第三元素氣體為處理氣體之一。再者，含第三元素氣體亦可認為係反應氣體。
此處，含第三元素氣體含有不同於第二元素之第三元素。第三元素例如為氮(N)。於本實施形態中，含第三元素氣體例如為含氮氣體。具體而言，作為含氮氣體，使用氨氣(NH3)。
主要藉由第四氣體供給管361、質量流量控制器363、閥364而構成第四氣體供給系統360(亦稱為反應氣體供給系統)。
再者，將第三氣體供給系統、第四氣體供給系統之任一者或其組合稱為第二氣體供給部340。
(電漿生成部)
繼而，返回至圖1、圖3，對電漿生成部400進行說明。電漿生成部400於處理空間209中生成電漿。於本實施形態中，如圖3記載般，電漿生成部400具有於處理空間209a中生成電漿之第一電漿生成部400a、於處理空間209b中生成電漿之第二電漿生成部400b、於處理空間209c中生成電漿之第三電漿生成部400c、及於處理空間209d中生成電漿之第四電漿生成部400d。再者，於本實施形態中，與下述基板處理方法相對應地，使用第二電漿生成部400b、第四電漿生成部400d。
繼而，對各電漿生成部400之具體構成進行說明。再者，第一電漿生成部400a、第二電漿生成部400b、第三電漿生成部400c、第四電漿生成部400d為相同構成，因此，此處設為電漿生成部400，對其具體構成進行說明。
如圖1記載般，作為各電漿生成部400之一構成之高頻電力供給線401(401a至401d)係連接於簇射頭230(230a至230d)。於高頻電力供給線401，自上游起依序設置有高頻電源402(402a至402d)、及整合器403(403a至403d)。高頻電源402連接於地線404。
主要將高頻電力供給線401(401a至401d)、高頻電源402(402a至402d)總稱為電漿生成部400(400a至400d)。
(控制器)
基板處理裝置200具有控制基板處理裝置200之各部之動作之控制器280。如圖7記載般，控制器280至少具有運算部(CPU)280a、暫時記憶部(RAM)280b、記憶部280c、及I/O端口280d。控制器 280經由I/O端口280d而連接於基板處理裝置200之各構成，根據上位裝置270或使用者之指示而自記憶部280c叫出程式或配方，根據其內容而控制電漿生成部400等各構成之動作。發送接收控制例如係由運算部280a內之發送接收指示部280e進行。再者，控制器280可構成為專用之電腦，亦可構成為通用之電腦。例如，準備儲存上述程式之外部記憶裝置(例如磁帶、軟碟或硬碟等磁碟、壓縮光碟(CD，Compact Disc)或數位多功能光碟(DVD，Digital Versatile Disc)等光碟、磁性光碟(MO，Magnetic Optical)等磁光碟、通用串列匯流排(USB，Universal Serial Bus)記憶體(USB Flash Drive，USB隨身碟)或記憶卡等半導體記憶體)282，使用外部記憶裝置282於通用之電腦安裝程式，藉此可構成本實施形態之控制器280。又，用以對電腦供給程式之手段不限定於經由外部記憶裝置282供給之情形。例如，可使用網際網路或專用線路等通信手段，亦可自上位裝置270經由接收部283而接收資訊，而不經由外部記憶裝置282供給程式。又，亦可使用鍵盤或觸控面板等輸入輸出裝置281而對控制器280進行指示。
再者，記憶部280c或外部記憶裝置282構成為電腦可讀取之記錄媒體。以下，亦將該等總稱地簡稱為記錄媒體。再者，於本說明書中使用記錄媒體這一用語之情形時，有僅包含記憶部280c單體之情形、僅包含外部記憶裝置282單體之情形、或包含其兩者之情形。
(基板處理方法)
繼而，使用圖8、圖9對基板處理方法進行說明。本實施形態 中之基板處理方法係與形成三維地構成電極之三維構造之半導體裝置的一步驟相關。此處，如圖8記載般，於晶圓100上形成交替地層積絕緣膜102與犧牲膜104之層積構造。
圖9係以一片晶圓100為主之層積絕緣膜102與犧牲膜104之流程。以下，一面將圖9之流程與基板處理裝置200之動作建立關聯一面對基板處理方法進行說明。再者，將以基板處理裝置200之動作為主之流程設為AS(Appratus Step，裝置步驟)02~AS28，將以基板之處理為主之流程設為SS(Substrate Step，基板步驟)02~SS10。
於本實施形態中，對在容器202內對4片晶圓100進行處理之例進行說明。此處，將最先投入至容器202之晶圓100表述為第一晶圓100，將第二次投入之晶圓100表述為第二晶圓100，將第三次投入之晶圓100表述為第三晶圓100，將第四次投入之晶圓100表述為第四晶圓100。第一晶圓100亦稱為晶圓100(1)，第二晶圓100亦稱為晶圓100(2)，第三晶圓亦稱為晶圓100(3)，第四晶圓100亦稱為晶圓100(4)。
(基板搬入步驟AS02)
對將晶圓100搬入至容器202內之基板搬入步驟AS02進行說明。此處，投入之晶圓100形成有共通源極線(CSL，Common Source Line)101。
於基板處理裝置200中，將晶圓100搬入之前，如圖2記載般，為孔部224a鄰接於基板搬入搬出口205之狀態。因此，孔部224a及托盤250a係配置於托盤載置面211a上。
臂240自基板搬入搬出口205進入至處理室201內，將晶圓100載置於托盤250上。於本實施形態中，將晶圓100(1)載置於鄰接於基板搬入搬出口205之托盤250a之晶圓載置面257a。
載置晶圓100(1)後，使旋轉板222下降。藉由該動作而將托盤250a載置於托盤載置面211a上。將托盤250a載置於托盤載置面211a上之後，關閉閘閥208而將容器202內密閉。以此方式將晶圓100(1)移動至處理空間209a。
當將托盤250載置於各托盤載置面211上時，對各加熱器213供給電力，以使晶圓100之表面成為既定之溫度之方式進行控制。晶圓100之溫度例如為室溫以上且800℃以下，較佳為室溫以上且700℃以下。此時，控制器280基於藉由未圖示之溫度感測器檢測出之溫度資訊而提取控制值，控制對加熱器213之通電情況，藉此調整加熱器213之溫度。
(氣體供給步驟AS04)
(處理空間209中之處理)
此處，就向處理空間209供給氣體之氣體供給步驟AS04進行說明。再者，於以晶圓100(1)為主體之情形時，氣體供給步驟AS04相當於晶圓100(1)之第一絕緣膜形成步驟SS02。
將已移動至處理空間209a之晶圓100(1)維持為既定之溫度後，以對處理空間209a供給含矽氣體、含氧氣體，不對其他處理空間209b、209c、209d供給處理氣體之方式控制第一氣體供給部300、第二氣體供給部340。此時，托盤250a之蓄熱部251蓄積自加熱器213傳導之熱。
於處理空間209a中，含矽氣體與含氧氣體發生反應，而於晶圓100(1)上形成作為絕緣膜102(1)之氧化矽膜。
(AS06)
於在氣體供給步驟AS04中使用電漿之情形時，於該步驟之後進行將托盤250去靜電之去靜電步驟AS06。去靜電方法之詳細情況將於下文進行敍述。於未生成電漿之情形時亦可省略。
(基板移動步驟AS08)
此處，對移動晶圓100(1)並且將晶圓100(2)搬入的基板移動步驟AS08進行說明。使旋轉板222上升而使托盤250自托盤載置面211離開。離開後，以使孔部224a移動至托盤載置面211b上之方式，使旋轉板222向順時針方向旋轉90度。旋轉結束時，於托盤載置面211b上配置有孔部224a，且於托盤載置面211a上配置有孔部224d、托盤250d。旋轉結束後，打開閘閥208，將晶圓100(2)載置於托盤250d。其後，將孔部224a之托盤250a載置於托盤載置面211b，將孔部224d之托盤250d載置於托盤載置面211a。
雖然於鄰接之基台210之間未設置加熱器，但托盤250具有蓄熱部251，因此即便於向鄰接之基台210移動之期間，晶圓100之溫度亦得以維持。
於本步驟中，以端子255與旋轉板222電性接觸之方式，進而，以孔254由旋轉板222封閉之方式，配置托盤250。
(氣體供給步驟AS10)
此處，就向處理空間209a供給氣體之氣體供給步驟AS10進行說明。再者，於以晶圓100為主體之情形時，氣體供給步驟AS10相當於晶圓100(1)之第一犧牲膜形成步驟SS04。又，對於晶圓100(2)，則相當於第一絕緣膜形成步驟SS02。於本步驟中，將開關225設為斷開，而將旋轉板222自地線226切斷。
(處理空間209a中之處理)
在處理空間209a中，對晶圓100(2)進行與氣體供給步驟AS04中之處理空間209a同樣之處理。藉此，於晶圓100(2)上形成絕緣膜102(1)。
(處理空間209b中之處理)
於處理空間209b中，對晶圓100(1)供給含矽氣體及含氮氣體。此時，為了分解含氮氣體，而電漿生成部400b使含氮氣體為電漿狀態。
於晶圓100(1)上，含矽氣體與電漿狀態之含氮氣體發生反應，於絕緣膜102(1)上形成作為犧牲膜104(1)之氮化矽膜。
(去靜電步驟AS12)
此處，對去靜電步驟AS12進行說明。由於處理空間209b中生成了電漿，故而托盤250a帶電。因此，托盤250a靜電吸附於基台210b。若欲於帶電狀態下剝離托盤250a，則認為晶圓100(1)會於托盤250a上彈起。於該情形時，有晶圓100(1)破裂或晶圓100(1)與附著於處理室201之附著物接觸而產生微粒之虞。
因此，於本步驟中，於停止電漿生成後且使托盤250自基台210離開前，將開關225接通。藉由將開關225接通，而托盤250所帶電之電荷經由旋轉板222而移動至地線226。以此方式，托盤250被去靜電而解除吸附狀態。
(基板移動步驟AS14)
此處，對移動晶圓100(1)、晶圓100(2)並且將晶圓100(3)搬入之基板移動步驟AS14進行說明。去靜電處理結束後，使旋轉板222上升，使托盤250自托盤載置面211a、托盤載置面211b離開。其後，使旋轉板222旋轉90°，將托盤250a載置於托盤載置面211c上，並將托盤250d載置於托盤載置面211b上。進而，將晶圓100(3)搬入並載置於托盤250c，與其他晶圓100同樣地，於托盤載置面211a上載置托盤250c。
於晶圓100移動之期間，藉由蓄熱部251而維持晶圓溫度。
(氣體供給步驟AS16)
此處，就向存在晶圓100之處理空間209a、處理空間209b、處理空間209c供給氣體之氣體供給步驟AS16進行說明。於以晶圓100為主體之情形時，氣體供給步驟AS16相當於晶圓100(1)之第二絕緣膜形成步驟SS06，相當於晶圓100(2)之第一犧牲膜形成步驟SS04，且相當於晶圓100(3)之第一絕緣膜形成步驟SS02。
(處理空間209a中之處理)
於處理空間209a中，對晶圓100(3)供給含矽氣體及含氧氣體，於晶圓100(3)上形成絕緣膜102(1)。
(處理空間209b中之處理)
於處理空間209b中，對晶圓100(2)供給含矽氣體及含氮氣體。此時，為了分解含氮氣體，電漿生成部400b使含氮氣體為電漿狀態。
於晶圓100(2)上，含矽氣體與電漿狀態之含氮氣體發生反應，於絕緣膜102(1)上形成作為犧牲膜104(1)之氮化矽膜。
(處理空間209c中之處理)
於處理空間209c中，對晶圓100(1)供給含矽氣體及含氧氣體，於犧牲膜104(1)上形成作為絕緣膜102(2)之氧化矽膜。
(去靜電步驟AS18)
此處，與去靜電步驟AS12同樣地，進行將托盤250去靜電之去靜電步驟AS18。於電漿生成停止後且使托盤250離開前，將開關225接通，而將托盤250去靜電。
(基板移動步驟AS20)
此處，對移動晶圓100(1)、晶圓100(2)、晶圓100(3)並且將晶圓100(4)搬入的基板移動步驟AS20進行說明。去靜電處理結束後，使旋轉板222上升而使托盤250自托盤載置面211a、托盤載置面211b、托盤載置面211c離開。其後，使旋轉板222旋轉90°，將 托盤250a載置於托盤載置面211d上，將托盤250d載置於托盤載置面211c，將托盤250c載置於托盤載置面211b。進而，將晶圓100(4)搬入並載置於托盤250b，與其他晶圓100同樣地，於托盤載置面211a上載置托盤250b。
於晶圓100移動之期間，藉由蓄熱部251而維持晶圓溫度。
(氣體供給步驟AS22)
此處，就向存在晶圓100之處理空間209a、處理空間209b、處理空間209c、處理空間209d供給氣體之氣體供給步驟AS22進行說明。以晶圓100為主體之情形時，氣體供給步驟AS22相當於晶圓100(1)之第二犧牲膜形成步驟SS08，相當於晶圓100(2)之第二絕緣膜形成步驟SS06，相當於晶圓100(3)之第一犧牲膜形成步驟SS04，且相當於晶圓100(4)之第一絕緣膜形成步驟SS02。
(處理空間209a中之處理)
於處理空間209a中，對晶圓100(4)供給含矽氣體及含氧氣體，於晶圓100(4)上形成絕緣膜102(1)。
(處理空間209b中之處理)
於處理空間209b中，對晶圓100(3)供給含矽氣體及含氮氣體。此時，為了分解含氮氣體，電漿生成部400b使含氮氣體為電漿狀態。
於晶圓100(3)上，含矽氣體與電漿狀態之含氮氣體發 生反應，於絕緣膜102(1)上形成作為犧牲膜104(1)之氮化矽膜。
(處理空間209c中之處理)
於處理空間209c中，對晶圓100(2)供給含矽氣體及含氧氣體，於犧牲膜104(1)上形成作為絕緣膜102(2)之氧化矽膜。
(處理空間209d中之處理)
於處理空間209d中，對晶圓100(1)供給含矽氣體及含氮氣體。此時，為了分解含氮氣體，電漿生成部400d使含氮氣體為電漿狀態。
於晶圓100(1)上，含矽氣體與電漿狀態之含氮氣體發生反應，於絕緣膜102(2)上形成作為犧牲膜104(2)之氮化矽膜。
(去靜電步驟AS24)
此處，與去靜電步驟AS12同樣地，進行將托盤250去靜電之去靜電步驟AS24。於電漿生成停止後且使托盤250離開前，將開關225接通，而將托盤250去靜電。
(基板移動步驟AS26)
此處，對移動晶圓100(1)、晶圓100(2)、晶圓100(3)、晶圓100(4)之基板移動步驟AS26進行說明。去靜電處理結束後，使旋轉板222上升而使托盤250自各托盤載置面211離開。其後，使旋轉板222旋轉90°，而使各托盤250於移動目的地之托盤載置面211上待機。
(判定步驟AS28)
此處，對判定步驟AS28進行說明。判定步驟AS28相當於晶圓100(1)之判定步驟SS10。於該步驟中，判斷第一絕緣膜形成步驟SS02至第二犧牲膜形成步驟SS08之組合是否進行了既定次數。 即，判斷是否形成了既定層之絕緣膜102與犧牲膜104。例如於絕緣膜102與犧牲膜104之合計總數之理想數為80層之情形時，判斷上述組合是否反覆進行了20次。於圖8中為m=40之情形。
若判斷為進行了既定次數，則結束基板處理裝置200中之處理。即，自基板處理裝置200搬出。此時，亦可與未處理晶圓100進行交換。關於搬出方法，將於下文進行敍述。
若判斷為未進行既定次數，則使托盤250下降，以進行氣體供給步驟AS04至基板移動步驟AS26之組合之方式進行控制。
再者，判定步驟AS28亦可於對各晶圓100(晶圓100(1)、晶圓100(2)、…、晶圓100(n))實施第一絕緣膜形成步驟SS02至第二犧牲膜形成步驟SS08之組合後每次均進行。
此處，對設置蓄熱部251之理由進行說明。如上所述，基台210間不存在加熱器213。因此，假設不存在蓄熱部251之情形時，晶圓100散熱或自旋轉板222之爪產生熱損失，而導致晶圓100之溫度降低。若晶圓100之溫度降低，則必須於下一基台210上進行加熱以補償降低之溫度。因此，存在處理效率因用以補償該溫度之加熱時間而降低的問題。
尤其，於如本實施形態般處理次數較多之情形時，每 次均需要用以補償溫度之加熱時間，因此處理時間顯著增加。
又，於本實施形態中之層積膜之情形時，若溫度降低則會產生以下問題。眾所周知，膜之層積數越是增加則膜應力越高。對於具有層積膜之晶圓，於低於處理溫度之情形時、或對一度降低之晶圓再次急遽進行加熱等而施加較大溫度變化的情形時，晶圓會撓曲。若以晶圓撓曲之狀態進行搬送，則有晶圓掉落或碰撞處理室之構造等而產生微粒之虞。又，晶圓之撓曲本身有導致晶圓上之圖案之倒塌等之虞。
於本實施形態中，層積氧化矽膜與氮化矽膜，但氧化矽膜之壓縮應力較高，且氮化矽膜之拉伸應力較高。因此，溫度之變化越大則撓曲越明顯。
關於圖案之倒塌，自伴隨近年來之微細化而圖案之物理耐性降低之觀點而言，更加被視為問題。
顯然會因以上之各問題點或其等之組合而導致生產效率降低。因此，於本實施形態中，於各基板移動步驟中亦抑制晶圓之溫度之變化。具體而言，藉由利用具有蓄熱部251之托盤250於基台210間進行搬送，而抑制晶圓溫度之降低。
(搬出步驟AS30)
繼而，對將晶圓100搬出之搬出步驟AS30進行說明。
當托盤250移動至托盤載置面211a上時，以使晶圓100與托盤250離開既定距離之方式進行控制。例如，基板升降部216a將晶圓100(1)維持在既定高度，並且旋轉板222使托盤250a下降。藉由使托盤250與晶圓100離開，而可使晶圓100(1)之溫度 降低。藉由使溫度降低，而當將晶圓100(1)移載至臂240時，可減少對臂240之熱負荷。因此，可防止臂240之熱下垂等。
繼而，打開閘閥208，將晶圓100(1)與未處理狀態之晶圓100(5)交換。以下，反覆進行氣體供給步驟AS04至判定步驟AS28之處理直至既定片數之基板處理結束為止。
(其他實施形態)
以下，對其他實施形態進行說明。於本實施形態中，將基板升降部、旋轉板升降部設為不同構成而進行說明，但只要可分別獨立地升降即可，亦可將任一組合設為一個構成。
又，於本實施形態中，於第一絕緣膜形成步驟SS02、第二絕緣膜形成步驟SS06中不使用電漿，但並不限定於此，亦可使用電漿。
又，於本實施形態中，以絕緣膜與犧牲膜之層積膜為例進行了說明，但並不限定於此，亦可為其他膜類型之層積膜。進而，亦可為形成相同膜類型之層積膜作為厚膜者。

Claims (21)

  1. 一種基板處理裝置，其具有：托盤，其具有供基板載置之蓄熱部；基板搬送部，其具有旋轉軸、及支撐於上述旋轉軸之旋轉板，且構成為可於上述旋轉板載置上述托盤；複數個基台，其等係以上述旋轉軸為中心配置為圓周狀；加熱器，其設置於上述基台之各者；電漿生成部，其於上述基台之上方生成電漿；去靜電部，其係上述托盤之一部分；及開關，其係一方電性連接於上述旋轉板，另一方連接於地線。
  2. 如請求項1之基板處理裝置，其中，當上述托盤載置於上述旋轉板時，上述旋轉板與上述去靜電部電性連接。
  3. 如請求項2之基板處理裝置，其中，上述去靜電部包含去靜電電極及端子，上述端子係以配置於較上述基板之直徑更靠水平方向外側之方式構成。
  4. 如請求項3之基板處理裝置，其中，上述去靜電電極係內包於上述蓄熱部。
  5. 如請求項4之基板處理裝置，其以如下方式構成，即，當上述托盤載置於上述旋轉板時，供上述端子貫通之孔由上述旋轉板封閉。
  6. 如請求項4之基板處理裝置，其中，上述開關以如下方式構成，即，於上述電漿生成部生成電漿之期間斷開，於上述電漿生成部停止電漿生成後直至使上述托盤自上述旋轉板分離為止之期間接通。
  7. 如請求項3之基板處理裝置，其以如下方式構成，即，當上述托盤載置於上述旋轉板時，供上述端子貫通之孔由上述旋轉板封閉。
  8. 如請求項3之基板處理裝置，其中，上述開關以如下方式構成，即，於上述電漿生成部生成電漿之期間斷開，於上述電漿生成部停止電漿生成後直至使上述托盤自上述旋轉板分離為止之期間接通。
  9. 如請求項2之基板處理裝置，其中，上述開關以如下方式構成，即，於上述電漿生成部生成電漿之期間斷開，於上述電漿生成部停止電漿生成後直至使上述托盤自上述旋轉板分離為止之期間接通。
  10. 如請求項2之基板處理裝置，其還具有使上述基板升降之基板升降部、及使上述托盤升降之托盤升降部，當自上述處理模組搬出上述基板時，以使上述基板與上述托盤分離之方式控制上述基板升降部與上述托盤升降部。
  11. 如請求項1之基板處理裝置，其中，上述去靜電部具有去靜電電極及端子，且上述端子係以配置於較上述基板之直徑更靠水平方向外側之方式構成。
  12. 如請求項11之基板處理裝置，其中，上述去靜電電極係內包於上述蓄熱部。
  13. 如請求項12之基板處理裝置，其以如下方式構成，即，當上述托盤載置於上述旋轉板時，供上述端子貫通之孔由上述旋轉板封閉。
  14. 如請求項11之基板處理裝置，其以如下方式構成，即，當上述托盤載置於上述旋轉板時，供上述端子貫通之孔由上述旋轉板封閉。
  15. 如請求項11之基板處理裝置，其中，上述開關以如下方式構成，即，於上述電漿生成部生成電漿之期間斷開，於上述電漿生成部停止電漿生成後直至使上述托盤自上述旋轉板分離為止之期間接通。
  16. 如請求項11之基板處理裝置，其還具有使上述基板升降之基板升降部、及使上述托盤升降之托盤升降部，當自上述處理模組搬出上述基板時，以使上述基板與上述托盤分離之方式控制上述基板升降部與上述托盤升降部。
  17. 如請求項1之基板處理裝置，其中，上述開關以如下方式構成，即，於上述電漿生成部生成電漿之期間斷開，於上述電漿生成部停止電漿生成後直至使上述托盤自上述旋轉板分離為止之期間接通。
  18. 如請求項17之基板處理裝置，其還具有使上述基板升降之基板升降部、及使上述托盤升降之托盤升降部，當自上述處理模組搬出上述基板時，以使上述基板與上述托盤分離之方式控制上述基板升降部與上述托盤升降部。
  19. 如請求項1之基板處理裝置，其還具有使上述基板升降之基板升降部、及使上述托盤升降之托盤升降部，當自上述處理模組搬出上述基板時，以使上述基板與上述托盤分離之方式控制上述基板升降部與上述托盤升降部。
  20. 一種半導體裝置之製造方法，其係使用請求項1之基板處理裝置而進行者，其具有如下步驟：將於蓄熱部載置有基板之狀態之托盤，載置於具有旋轉軸及支撐於上述旋轉軸之旋轉板之基板搬送部；將上述托盤載置於以上述旋轉軸為中心配置為複數個圓周狀並且分別具有加熱器之基台，對基板進行處理；及使上述基板搬送部移動上述托盤，將上述托盤載置於與上述基台不同之基台。
  21. 一種程式，其藉由電腦而使請求項1之基板處理裝置執行如下動作：將於蓄熱部載置有基板之狀態之托盤，載置於具有旋轉軸及支撐於上述旋轉軸之旋轉板之基板搬送部，將上述托盤載置於以上述旋轉軸為中心配置為複數個圓周狀並且分別具有加熱器之基台，對基板進行處理，使上述基板搬送部移動上述托盤，將上述托盤載置於與上述基台不同之基台。
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