TWI659275B - 曝光裝置、基板處理裝置、曝光方法、及基板處理方法 - Google Patents

曝光裝置、基板處理裝置、曝光方法、及基板處理方法 Download PDF

Info

Publication number
TWI659275B
TWI659275B TW107103946A TW107103946A TWI659275B TW I659275 B TWI659275 B TW I659275B TW 107103946 A TW107103946 A TW 107103946A TW 107103946 A TW107103946 A TW 107103946A TW I659275 B TWI659275 B TW I659275B
Authority
TW
Taiwan
Prior art keywords
substrate
exposure
vacuum ultraviolet
ultraviolet rays
section
Prior art date
Application number
TW107103946A
Other languages
English (en)
Chinese (zh)
Other versions
TW201833686A (zh
Inventor
松尾友宏
Tomohiro Matsuo
福本靖博
Yasuhiro Fukumoto
大木孝文
Takafumi OKI
浅井正也
Masaya Asai
春本将彦
Masahiko Harumoto
田中裕二
Yuji Tanaka
中山知佐世
Chisayo NAKAYAMA
Original Assignee
日商斯庫林集團股份有限公司
SCREEN Holdings Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商斯庫林集團股份有限公司, SCREEN Holdings Co., Ltd. filed Critical 日商斯庫林集團股份有限公司
Publication of TW201833686A publication Critical patent/TW201833686A/zh
Application granted granted Critical
Publication of TWI659275B publication Critical patent/TWI659275B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558Dose control, i.e. achievement of a desired dose
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70775Position control, e.g. interferometers or encoders for determining the stage position
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933Purge, e.g. exchanging fluid or gas to remove pollutants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0436Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306Horizontal transfer of a single workpiece
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041Photolithographic processes

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW107103946A 2017-03-01 2018-02-05 曝光裝置、基板處理裝置、曝光方法、及基板處理方法 TWI659275B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017038235A JP6985803B2 (ja) 2017-03-01 2017-03-01 露光装置、基板処理装置、基板の露光方法および基板処理方法
JP2017-038235 2017-03-01

Publications (2)

Publication Number Publication Date
TW201833686A TW201833686A (zh) 2018-09-16
TWI659275B true TWI659275B (zh) 2019-05-11

Family

ID=63355130

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107103946A TWI659275B (zh) 2017-03-01 2018-02-05 曝光裝置、基板處理裝置、曝光方法、及基板處理方法

Country Status (5)

Country Link
US (1) US10401736B2 (https=)
JP (1) JP6985803B2 (https=)
KR (1) KR102103632B1 (https=)
CN (1) CN108535966B (https=)
TW (1) TWI659275B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10469692B2 (en) * 2015-02-18 2019-11-05 V Technology Co., Ltd. Scanning exposure device
CN120469170A (zh) * 2019-09-19 2025-08-12 株式会社斯库林集团 曝光装置
JP7475232B2 (ja) * 2020-07-22 2024-04-26 株式会社ディスコ 保護部材形成装置
CN113176712B (zh) * 2021-04-25 2024-12-31 上海图双精密装备有限公司 一种适于接触式光刻机的曝光装置
WO2024242214A1 (ko) * 2023-05-23 2024-11-28 정재현 광 조사장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6211942B1 (en) * 2000-03-10 2001-04-03 Howa Machinery Ltd. Double-sided exposure system
US20160004168A1 (en) * 2013-03-14 2016-01-07 Carl Zeiss Smt Gmbh Measuring an optical symmetry property on a projection exposure apparatus
US20160279651A1 (en) * 2015-03-25 2016-09-29 SCREEN Holdings Co., Ltd. Exposure device and substrate processing apparatus

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3378271B2 (ja) 1992-06-11 2003-02-17 株式会社ニコン 露光方法及び装置、並びに前記方法を使用するデバイス製造方法
US5763892A (en) 1995-06-19 1998-06-09 Dainippon Screen Manufacturing Company, Ltd. Ultraviolet irradiator for substrate, substrate treatment system, and method of irradiating substrate with ultraviolet light
TW416532U (en) 1996-03-26 2000-12-21 C Sun Mfg Ltd Energy integrating controller of exposure machine
JPH10284407A (ja) 1997-04-08 1998-10-23 Nikon Corp 露光装置及び露光装置を用いた半導体デバイスの製造方法
JP2000100685A (ja) 1998-09-17 2000-04-07 Nikon Corp 露光装置及び該装置を用いた露光方法
JP2001110710A (ja) 1999-10-08 2001-04-20 Nikon Corp 露光装置、露光方法、および半導体デバイスの製造方法
JP2001284236A (ja) 2000-03-31 2001-10-12 Canon Inc 投影露光装置及び露光方法
JP4485282B2 (ja) 2004-08-06 2010-06-16 シャープ株式会社 露光装置、露光量制御方法、露光量制御プログラムとその記録媒体
EP1906251A1 (en) * 2006-09-26 2008-04-02 Carl Zeiss SMT AG Projection exposure method and projection exposure system
JP4952375B2 (ja) * 2007-05-23 2012-06-13 株式会社明電舎 レジスト除去方法及びその装置
US20110130009A1 (en) * 2009-11-30 2011-06-02 Lam Research Ag Method and apparatus for surface treatment using a mixture of acid and oxidizing gas
CN203037348U (zh) 2012-12-04 2013-07-03 彩虹(佛山)平板显示有限公司 玻璃基板表面积光量的检测装置
JP6099970B2 (ja) * 2012-12-27 2017-03-22 キヤノン株式会社 露光装置及びデバイスの製造方法
JP6099969B2 (ja) * 2012-12-27 2017-03-22 キヤノン株式会社 露光装置及びデバイスの製造方法
US9318663B2 (en) * 2013-07-10 2016-04-19 Epistar Corporation Light-emitting element
JP6535197B2 (ja) 2014-04-28 2019-06-26 株式会社ブイ・テクノロジー 露光装置及び露光方法
KR101681636B1 (ko) * 2014-11-28 2016-12-02 세메스 주식회사 에지 노광 장치 및 방법, 기판 처리 장치
JP6543064B2 (ja) 2015-03-25 2019-07-10 株式会社Screenホールディングス 露光装置、基板処理装置、基板の露光方法および基板処理方法
JP2017044537A (ja) * 2015-08-25 2017-03-02 ウシオ電機株式会社 照度計、光照射装置および照度測定方法
JP6872385B2 (ja) * 2017-03-01 2021-05-19 株式会社Screenホールディングス 露光装置、基板処理装置、基板の露光方法および基板処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6211942B1 (en) * 2000-03-10 2001-04-03 Howa Machinery Ltd. Double-sided exposure system
US20160004168A1 (en) * 2013-03-14 2016-01-07 Carl Zeiss Smt Gmbh Measuring an optical symmetry property on a projection exposure apparatus
US20160279651A1 (en) * 2015-03-25 2016-09-29 SCREEN Holdings Co., Ltd. Exposure device and substrate processing apparatus

Also Published As

Publication number Publication date
US10401736B2 (en) 2019-09-03
CN108535966B (zh) 2021-07-02
US20180253012A1 (en) 2018-09-06
CN108535966A (zh) 2018-09-14
KR20180100495A (ko) 2018-09-11
TW201833686A (zh) 2018-09-16
KR102103632B1 (ko) 2020-04-22
JP6985803B2 (ja) 2021-12-22
JP2018147917A (ja) 2018-09-20

Similar Documents

Publication Publication Date Title
TWI659275B (zh) 曝光裝置、基板處理裝置、曝光方法、及基板處理方法
TWI712865B (zh) 曝光裝置、基板處理裝置、曝光方法及基板處理方法
TWI706226B (zh) 曝光裝置、基板處理裝置、基板之曝光方法及基板處理方法
TWI649642B (zh) 曝光裝置、基板處理裝置、基板曝光方法以及基板處理方法
WO2018173344A1 (ja) 露光装置、基板処理装置、基板の露光方法および基板処理方法
TWI666525B (zh) 曝光裝置及基板處理裝置
TWI682433B (zh) 曝光裝置、基板處理裝置、基板曝光方法以及基板處理方法
TWI676868B (zh) 曝光裝置、基板處理裝置、基板之曝光方法及基板處理方法
JP6924661B2 (ja) 露光装置、基板処理装置、露光方法および基板処理方法
JP7002262B2 (ja) 露光装置、基板処理装置、露光方法および基板処理方法