TWI658320B - 圖案轉印方法及顯示裝置之製造方法 - Google Patents
圖案轉印方法及顯示裝置之製造方法 Download PDFInfo
- Publication number
- TWI658320B TWI658320B TW106130523A TW106130523A TWI658320B TW I658320 B TWI658320 B TW I658320B TW 106130523 A TW106130523 A TW 106130523A TW 106130523 A TW106130523 A TW 106130523A TW I658320 B TWI658320 B TW I658320B
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- Taiwan
- Prior art keywords
- pattern
- light
- transfer
- film
- main
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000012546 transfer Methods 0.000 claims abstract description 92
- 238000002834 transmittance Methods 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 239000000463 material Substances 0.000 claims description 30
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 230000007261 regionalization Effects 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 188
- 230000010363 phase shift Effects 0.000 description 27
- 230000000052 comparative effect Effects 0.000 description 26
- 239000000203 mixture Substances 0.000 description 21
- 238000005530 etching Methods 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 16
- 230000000694 effects Effects 0.000 description 15
- 238000001039 wet etching Methods 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 11
- 239000010410 layer Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000013041 optical simulation Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 3
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000012788 optical film Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- -1 oxynitrides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Geometry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-199013 | 2014-09-29 | ||
| JP2014199013A JP6335735B2 (ja) | 2014-09-29 | 2014-09-29 | フォトマスク及び表示装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201740184A TW201740184A (zh) | 2017-11-16 |
| TWI658320B true TWI658320B (zh) | 2019-05-01 |
Family
ID=55605593
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106130523A TWI658320B (zh) | 2014-09-29 | 2015-08-25 | 圖案轉印方法及顯示裝置之製造方法 |
| TW104127730A TWI604264B (zh) | 2014-09-29 | 2015-08-25 | 光罩及顯示裝置之製造方法 |
| TW106130522A TWI635353B (zh) | 2014-09-29 | 2015-08-25 | 光罩及顯示裝置之製造方法 |
| TW108109637A TWI694302B (zh) | 2014-09-29 | 2015-08-25 | 光罩及顯示裝置之製造方法 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104127730A TWI604264B (zh) | 2014-09-29 | 2015-08-25 | 光罩及顯示裝置之製造方法 |
| TW106130522A TWI635353B (zh) | 2014-09-29 | 2015-08-25 | 光罩及顯示裝置之製造方法 |
| TW108109637A TWI694302B (zh) | 2014-09-29 | 2015-08-25 | 光罩及顯示裝置之製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6335735B2 (enrdf_load_stackoverflow) |
| KR (3) | KR20160037806A (enrdf_load_stackoverflow) |
| CN (2) | CN105467745B (enrdf_load_stackoverflow) |
| TW (4) | TWI658320B (enrdf_load_stackoverflow) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6259509B1 (ja) * | 2016-12-28 | 2018-01-10 | 株式会社エスケーエレクトロニクス | ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法 |
| JP6808665B2 (ja) * | 2017-03-10 | 2021-01-06 | Hoya株式会社 | 表示装置製造用フォトマスク、及び表示装置の製造方法 |
| JP7080070B2 (ja) * | 2017-03-24 | 2022-06-03 | Hoya株式会社 | フォトマスク、及び表示装置の製造方法 |
| JP6368000B1 (ja) * | 2017-04-04 | 2018-08-01 | 株式会社エスケーエレクトロニクス | フォトマスク及びフォトマスクブランクス並びにフォトマスクの製造方法 |
| TWI659262B (zh) * | 2017-08-07 | 2019-05-11 | 日商Ｈｏｙａ股份有限公司 | 光罩之修正方法、光罩之製造方法、光罩及顯示裝置之製造方法 |
| TWI710649B (zh) * | 2017-09-12 | 2020-11-21 | 日商Ｈｏｙａ股份有限公司 | 光罩及顯示裝置之製造方法 |
| JP6731441B2 (ja) * | 2018-05-01 | 2020-07-29 | Hoya株式会社 | フォトマスク及び表示装置の製造方法 |
| KR102254646B1 (ko) | 2018-07-30 | 2021-05-21 | 호야 가부시키가이샤 | 포토마스크 수정 방법, 포토마스크의 제조 방법, 포토마스크, 및 표시 장치용 디바이스의 제조 방법 |
| KR102367141B1 (ko) * | 2019-02-27 | 2022-02-23 | 호야 가부시키가이샤 | 포토마스크, 포토마스크의 제조 방법, 및 표시 장치의 제조 방법 |
| JP7437959B2 (ja) | 2019-03-07 | 2024-02-26 | Hoya株式会社 | 修正フォトマスク、及び表示装置の製造方法 |
| CN110456610B (zh) * | 2019-08-29 | 2023-06-13 | 上海华力集成电路制造有限公司 | 优化通孔层工艺窗口的辅助图形及方法 |
| JP7383490B2 (ja) * | 2020-01-07 | 2023-11-20 | 株式会社エスケーエレクトロニクス | フォトマスク |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0695360A (ja) * | 1992-09-10 | 1994-04-08 | Fujitsu Ltd | 光学マスク |
| JP2005017433A (ja) * | 2003-06-24 | 2005-01-20 | Matsushita Electric Ind Co Ltd | フォトマスク、そのフォトマスクを用いたパターン形成方法、及びそのフォトマスクのマスクデータ作成方法 |
| TW201109833A (en) * | 2009-04-16 | 2011-03-16 | Hoya Corp | Mask blank and transfer mask and method of evaluating film denseness |
| US20110183240A1 (en) * | 2009-12-21 | 2011-07-28 | Hoya Corporation | Mask blank, mask blank manufacturing method, transfer mask, and transfer mask manufacturing method |
| TW201400977A (zh) * | 2012-06-01 | 2014-01-01 | Hoya Corp | 光罩、光罩之製造方法及圖案之轉印方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0315845A (ja) | 1989-06-14 | 1991-01-24 | Hitachi Ltd | マスク及びマスク作製方法 |
| JP2000019710A (ja) * | 1998-07-07 | 2000-01-21 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JP2000181048A (ja) * | 1998-12-16 | 2000-06-30 | Sharp Corp | フォトマスクおよびその製造方法、並びにそれを用いた露光方法 |
| JP4645076B2 (ja) * | 2004-06-28 | 2011-03-09 | 凸版印刷株式会社 | 位相シフトマスクおよびその製造方法およびパターン転写方法 |
| DE602006021102D1 (de) * | 2005-07-21 | 2011-05-19 | Shinetsu Chemical Co | Photomaskenrohling, Photomaske und deren Herstellungsverfahren |
| JP3971774B2 (ja) * | 2005-10-17 | 2007-09-05 | 松下電器産業株式会社 | パターン形成方法 |
| JP3971775B2 (ja) * | 2005-10-17 | 2007-09-05 | 松下電器産業株式会社 | フォトマスク |
| JP2007219038A (ja) * | 2006-02-15 | 2007-08-30 | Hoya Corp | マスクブランク及びフォトマスク |
| JP4484909B2 (ja) * | 2007-07-24 | 2010-06-16 | キヤノン株式会社 | 原版データ作成方法、原版作成方法、露光方法および原版データ作成プログラム |
| CN108267927B (zh) * | 2011-12-21 | 2021-08-24 | 大日本印刷株式会社 | 大型相移掩膜 |
| JP2013140236A (ja) * | 2011-12-29 | 2013-07-18 | Hoya Corp | マスクブランク及び位相シフトマスクの製造方法 |
| JP6232709B2 (ja) * | 2012-02-15 | 2017-11-22 | 大日本印刷株式会社 | 位相シフトマスク及び当該位相シフトマスクを用いたレジストパターン形成方法 |
| JP6139826B2 (ja) * | 2012-05-02 | 2017-05-31 | Hoya株式会社 | フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法 |
| JP5916680B2 (ja) * | 2012-10-25 | 2016-05-11 | Hoya株式会社 | 表示装置製造用フォトマスク、及びパターン転写方法 |
-
2014
- 2014-09-29 JP JP2014199013A patent/JP6335735B2/ja active Active
-
2015
- 2015-08-25 TW TW106130523A patent/TWI658320B/zh active
- 2015-08-25 TW TW104127730A patent/TWI604264B/zh active
- 2015-08-25 TW TW106130522A patent/TWI635353B/zh active
- 2015-08-25 TW TW108109637A patent/TWI694302B/zh active
- 2015-09-25 CN CN201510624801.XA patent/CN105467745B/zh active Active
- 2015-09-25 KR KR1020150136927A patent/KR20160037806A/ko not_active Ceased
- 2015-09-25 CN CN201911133180.XA patent/CN110824828B/zh active Active
-
2017
- 2017-10-11 KR KR1020170129436A patent/KR102182505B1/ko active Active
-
2020
- 2020-11-18 KR KR1020200154522A patent/KR102304206B1/ko active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0695360A (ja) * | 1992-09-10 | 1994-04-08 | Fujitsu Ltd | 光学マスク |
| JP2005017433A (ja) * | 2003-06-24 | 2005-01-20 | Matsushita Electric Ind Co Ltd | フォトマスク、そのフォトマスクを用いたパターン形成方法、及びそのフォトマスクのマスクデータ作成方法 |
| TW201109833A (en) * | 2009-04-16 | 2011-03-16 | Hoya Corp | Mask blank and transfer mask and method of evaluating film denseness |
| US20110183240A1 (en) * | 2009-12-21 | 2011-07-28 | Hoya Corporation | Mask blank, mask blank manufacturing method, transfer mask, and transfer mask manufacturing method |
| TW201400977A (zh) * | 2012-06-01 | 2014-01-01 | Hoya Corp | 光罩、光罩之製造方法及圖案之轉印方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105467745A (zh) | 2016-04-06 |
| CN110824828A (zh) | 2020-02-21 |
| KR20160037806A (ko) | 2016-04-06 |
| JP6335735B2 (ja) | 2018-05-30 |
| TW201743129A (zh) | 2017-12-16 |
| TW201627751A (zh) | 2016-08-01 |
| KR20200132813A (ko) | 2020-11-25 |
| CN110824828B (zh) | 2023-12-29 |
| TW201740184A (zh) | 2017-11-16 |
| JP2016071059A (ja) | 2016-05-09 |
| TW201928507A (zh) | 2019-07-16 |
| KR20170117988A (ko) | 2017-10-24 |
| KR102182505B1 (ko) | 2020-11-24 |
| TWI694302B (zh) | 2020-05-21 |
| TWI635353B (zh) | 2018-09-11 |
| CN105467745B (zh) | 2019-12-20 |
| KR102304206B1 (ko) | 2021-09-17 |
| TWI604264B (zh) | 2017-11-01 |
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