TWI656580B - 凹入特徵部中之膜的由下而上沉積方法 - Google Patents

凹入特徵部中之膜的由下而上沉積方法 Download PDF

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Publication number
TWI656580B
TWI656580B TW105130711A TW105130711A TWI656580B TW I656580 B TWI656580 B TW I656580B TW 105130711 A TW105130711 A TW 105130711A TW 105130711 A TW105130711 A TW 105130711A TW I656580 B TWI656580 B TW I656580B
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TW
Taiwan
Prior art keywords
film
sidewall
recessed feature
group
metal
Prior art date
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TW105130711A
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English (en)
Chinese (zh)
Other versions
TW201714226A (zh
Inventor
Kandabara N. Tapily
坎達巴拉 Ｎ 泰伯利
David L. O'meara
大衛 Ｌ 歐米拉
Kaushik A Kumar
寇西克 Ａ 庫馬
Original Assignee
Tokyo Electron Limited
日商東京威力科創股份有限公司
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Application filed by Tokyo Electron Limited, 日商東京威力科創股份有限公司 filed Critical Tokyo Electron Limited
Publication of TW201714226A publication Critical patent/TW201714226A/zh
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Publication of TWI656580B publication Critical patent/TWI656580B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/20—Diffusion for doping of insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/694—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by their behaviour during the process, e.g. soluble masks or redeposited masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/088—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving partial etching of via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW105130711A 2015-09-24 2016-09-23 凹入特徵部中之膜的由下而上沉積方法 TWI656580B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562232027P 2015-09-24 2015-09-24
US62/232,027 2015-09-24

Publications (2)

Publication Number Publication Date
TW201714226A TW201714226A (zh) 2017-04-16
TWI656580B true TWI656580B (zh) 2019-04-11

Family

ID=58387284

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105130711A TWI656580B (zh) 2015-09-24 2016-09-23 凹入特徵部中之膜的由下而上沉積方法

Country Status (5)

Country Link
US (1) US10079151B2 (https=)
JP (1) JP6842616B2 (https=)
KR (1) KR102522329B1 (https=)
TW (1) TWI656580B (https=)
WO (1) WO2017053558A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110546753B (zh) * 2017-04-24 2023-08-11 应用材料公司 高深宽比结构中的间隙填充的方法
KR20200142601A (ko) * 2018-05-16 2020-12-22 어플라이드 머티어리얼스, 인코포레이티드 원자 층 자기 정렬 기판 프로세싱 및 통합 툴셋

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050112839A1 (en) * 2003-11-25 2005-05-26 Yung-Hsien Wu Method of selectively etching HSG layer in deep trench capacitor fabrication

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US7041553B2 (en) 2004-06-02 2006-05-09 International Business Machines Corporation Process for forming a buried plate
US7148155B1 (en) 2004-10-26 2006-12-12 Novellus Systems, Inc. Sequential deposition/anneal film densification method
KR100744071B1 (ko) 2006-03-31 2007-07-30 주식회사 하이닉스반도체 벌브형 리세스 게이트를 갖는 반도체 소자의 제조방법
US7838928B2 (en) * 2008-06-06 2010-11-23 Qimonda Ag Word line to bit line spacing method and apparatus
US8592266B2 (en) 2010-10-27 2013-11-26 International Business Machines Corporation Replacement gate MOSFET with a high performance gate electrode
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US8846536B2 (en) * 2012-03-05 2014-09-30 Novellus Systems, Inc. Flowable oxide film with tunable wet etch rate
WO2014018273A1 (en) * 2012-07-25 2014-01-30 Power Integrations, Inc. Method of forming a tapered oxide
US8765609B2 (en) * 2012-07-25 2014-07-01 Power Integrations, Inc. Deposit/etch for tapered oxide
US9177780B2 (en) 2012-10-02 2015-11-03 Applied Materials, Inc. Directional SiO2 etch using plasma pre-treatment and high-temperature etchant deposition
US9728623B2 (en) * 2013-06-19 2017-08-08 Varian Semiconductor Equipment Associates, Inc. Replacement metal gate transistor
US9460932B2 (en) 2013-11-11 2016-10-04 Applied Materials, Inc. Surface poisoning using ALD for high selectivity deposition of high aspect ratio features
US9385222B2 (en) * 2014-02-14 2016-07-05 Infineon Technologies Ag Semiconductor device with insert structure at a rear side and method of manufacturing

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050112839A1 (en) * 2003-11-25 2005-05-26 Yung-Hsien Wu Method of selectively etching HSG layer in deep trench capacitor fabrication

Also Published As

Publication number Publication date
US10079151B2 (en) 2018-09-18
US20170092508A1 (en) 2017-03-30
TW201714226A (zh) 2017-04-16
JP6842616B2 (ja) 2021-03-17
WO2017053558A1 (en) 2017-03-30
JP2018528621A (ja) 2018-09-27
KR102522329B1 (ko) 2023-04-14
KR20180048971A (ko) 2018-05-10

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