TWI650769B - 記憶體裝置及記憶胞陣列的程式化方法 - Google Patents

記憶體裝置及記憶胞陣列的程式化方法 Download PDF

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Publication number
TWI650769B
TWI650769B TW107117433A TW107117433A TWI650769B TW I650769 B TWI650769 B TW I650769B TW 107117433 A TW107117433 A TW 107117433A TW 107117433 A TW107117433 A TW 107117433A TW I650769 B TWI650769 B TW I650769B
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Taiwan
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memory cell
memory
input data
data
group
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TW107117433A
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English (en)
Chinese (zh)
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TW202004752A (zh
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何文喬
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華邦電子股份有限公司
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Priority to TW107117433A priority Critical patent/TWI650769B/zh
Priority to JP2018195561A priority patent/JP2019204570A/ja
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Publication of TWI650769B publication Critical patent/TWI650769B/zh
Publication of TW202004752A publication Critical patent/TW202004752A/zh
Priority to JP2021063150A priority patent/JP7087153B2/ja

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  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW107117433A 2018-05-22 2018-05-22 記憶體裝置及記憶胞陣列的程式化方法 TWI650769B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW107117433A TWI650769B (zh) 2018-05-22 2018-05-22 記憶體裝置及記憶胞陣列的程式化方法
JP2018195561A JP2019204570A (ja) 2018-05-22 2018-10-17 メモリデバイス及びメモリセルアレイのプログラミング方法
JP2021063150A JP7087153B2 (ja) 2018-05-22 2021-04-01 メモリデバイス及びメモリセルアレイのプログラミング方法

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TW107117433A TWI650769B (zh) 2018-05-22 2018-05-22 記憶體裝置及記憶胞陣列的程式化方法

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TWI650769B true TWI650769B (zh) 2019-02-11
TW202004752A TW202004752A (zh) 2020-01-16

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI785819B (zh) * 2021-08-05 2022-12-01 旺宏電子股份有限公司 記憶體裝置及其記憶體控制方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7089622B1 (ja) * 2021-06-18 2022-06-22 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060146636A1 (en) * 2004-06-04 2006-07-06 Jen-Shou Hsu Internal power management scheme for a memory chip in deep power down mode
TW201239887A (en) * 2011-02-28 2012-10-01 Samsung Electronics Co Ltd Nonvolatile memory device, memory system including the same, and method of operating nonvolatile memory device
TW201440071A (zh) * 2013-01-16 2014-10-16 Macronix Int Co Ltd 記憶體的操作方法
TW201714091A (zh) * 2015-10-08 2017-04-16 上海兆芯集成電路有限公司 同時執行長短期記憶胞計算之神經網路單元

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100423894B1 (ko) * 2002-05-09 2004-03-22 삼성전자주식회사 저전압 반도체 메모리 장치
KR100645047B1 (ko) * 2004-10-12 2006-11-10 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 고속 프로그램 방법
KR100706245B1 (ko) * 2005-04-13 2007-04-11 삼성전자주식회사 비트 스캔 방식을 사용한 노어 플래시 메모리 장치 및그것의 프로그램 방법
US7649791B2 (en) * 2006-03-28 2010-01-19 Andrea Martinelli Non volatile memory device architecture and corresponding programming method
JP5702573B2 (ja) * 2010-10-20 2015-04-15 スパンション エルエルシー 不揮発性半導体記憶装置およびそのデータ書き込み方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060146636A1 (en) * 2004-06-04 2006-07-06 Jen-Shou Hsu Internal power management scheme for a memory chip in deep power down mode
TW201239887A (en) * 2011-02-28 2012-10-01 Samsung Electronics Co Ltd Nonvolatile memory device, memory system including the same, and method of operating nonvolatile memory device
TW201440071A (zh) * 2013-01-16 2014-10-16 Macronix Int Co Ltd 記憶體的操作方法
TW201714091A (zh) * 2015-10-08 2017-04-16 上海兆芯集成電路有限公司 同時執行長短期記憶胞計算之神經網路單元

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI785819B (zh) * 2021-08-05 2022-12-01 旺宏電子股份有限公司 記憶體裝置及其記憶體控制方法

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Publication number Publication date
JP2021101403A (ja) 2021-07-08
JP7087153B2 (ja) 2022-06-20
TW202004752A (zh) 2020-01-16
JP2019204570A (ja) 2019-11-28

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