TWI649799B - 導電溝槽深度之感應監控 - Google Patents

導電溝槽深度之感應監控 Download PDF

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Publication number
TWI649799B
TWI649799B TW104120022A TW104120022A TWI649799B TW I649799 B TWI649799 B TW I649799B TW 104120022 A TW104120022 A TW 104120022A TW 104120022 A TW104120022 A TW 104120022A TW I649799 B TWI649799 B TW I649799B
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TW
Taiwan
Prior art keywords
substrate
layer
signal
conductive
depth
Prior art date
Application number
TW104120022A
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English (en)
Chinese (zh)
Other versions
TW201603134A (zh
Inventor
魯偉
Wei Lu
王哲甫
Zhefu Wang
王志宏
Zhihong Wang
依拉維尼韓森Ｇ
Hassan G. Iravani
班維紐多明尼克Ｊ
Dominic J. Benvegnu
卡爾森伊格馬
Ingemar Carlsson
史威克柏格斯勞Ａ
Boguslaw A. Swedek
涂文強
Wen-Chiang Tu
Original Assignee
美商應用材料股份有限公司
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司, Applied Materials, Inc. filed Critical 美商應用材料股份有限公司
Publication of TW201603134A publication Critical patent/TW201603134A/zh
Application granted granted Critical
Publication of TWI649799B publication Critical patent/TWI649799B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW104120022A 2014-06-23 2015-06-22 導電溝槽深度之感應監控 TWI649799B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/312,503 US9754846B2 (en) 2014-06-23 2014-06-23 Inductive monitoring of conductive trench depth
US14/312,503 2014-06-23

Publications (2)

Publication Number Publication Date
TW201603134A TW201603134A (zh) 2016-01-16
TWI649799B true TWI649799B (zh) 2019-02-01

Family

ID=54870327

Family Applications (2)

Application Number Title Priority Date Filing Date
TW104120022A TWI649799B (zh) 2014-06-23 2015-06-22 導電溝槽深度之感應監控
TW107146304A TWI701733B (zh) 2014-06-23 2015-06-22 導電溝槽深度之感應監控

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW107146304A TWI701733B (zh) 2014-06-23 2015-06-22 導電溝槽深度之感應監控

Country Status (6)

Country Link
US (3) US9754846B2 (https=)
JP (1) JP6640754B2 (https=)
KR (1) KR102383708B1 (https=)
CN (2) CN106463380B (https=)
TW (2) TWI649799B (https=)
WO (1) WO2015200101A1 (https=)

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TWI816620B (zh) 2017-04-21 2023-09-21 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
TWI783037B (zh) * 2017-09-25 2022-11-11 美商應用材料股份有限公司 使用機器學習方式以產生製程控制參數的半導體製造
TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
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US11251096B2 (en) 2018-09-05 2022-02-15 Micron Technology, Inc. Wafer registration and overlay measurement systems and related methods
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JP7291558B2 (ja) * 2019-07-03 2023-06-15 株式会社荏原製作所 渦電流センサ
JP7341022B2 (ja) 2019-10-03 2023-09-08 株式会社荏原製作所 基板研磨装置および膜厚マップ作成方法
JP7507576B2 (ja) * 2020-03-17 2024-06-28 株式会社東京精密 研削装置
KR20250073489A (ko) 2020-05-14 2025-05-27 어플라이드 머티어리얼스, 인코포레이티드 연마 동안의 인-시튜 모니터링에 사용하기 위한 신경망을 훈련시키기 위한 기법 및 연마 시스템
TWI810069B (zh) 2020-06-08 2023-07-21 美商應用材料股份有限公司 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品
JP7447284B2 (ja) * 2020-06-24 2024-03-11 アプライド マテリアルズ インコーポレイテッド 研磨パッドの摩耗補償による基板層の厚さの決定
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Also Published As

Publication number Publication date
JP2017520124A (ja) 2017-07-20
CN106463380B (zh) 2019-10-29
WO2015200101A1 (en) 2015-12-30
TW201603134A (zh) 2016-01-16
JP6640754B2 (ja) 2020-02-05
TWI701733B (zh) 2020-08-11
US10103073B2 (en) 2018-10-16
US20190035699A1 (en) 2019-01-31
US20150371913A1 (en) 2015-12-24
CN111211052A (zh) 2020-05-29
US20170365532A1 (en) 2017-12-21
US10741459B2 (en) 2020-08-11
CN111211052B (zh) 2023-09-19
KR20170018960A (ko) 2017-02-20
TW201929080A (zh) 2019-07-16
US9754846B2 (en) 2017-09-05
KR102383708B1 (ko) 2022-04-05
CN106463380A (zh) 2017-02-22

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