CN106463380B - 导电沟槽深度的感应监测 - Google Patents

导电沟槽深度的感应监测 Download PDF

Info

Publication number
CN106463380B
CN106463380B CN201580029881.2A CN201580029881A CN106463380B CN 106463380 B CN106463380 B CN 106463380B CN 201580029881 A CN201580029881 A CN 201580029881A CN 106463380 B CN106463380 B CN 106463380B
Authority
CN
China
Prior art keywords
substrate
polishing
layer
value sequence
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580029881.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN106463380A (zh
Inventor
W·陆
Z·王
H·G·伊拉瓦尼
D·J·本韦格努
I·卡尔松
B·A·斯伟德克
W-C·图
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN201910937866.8A priority Critical patent/CN111211052B/zh
Publication of CN106463380A publication Critical patent/CN106463380A/zh
Application granted granted Critical
Publication of CN106463380B publication Critical patent/CN106463380B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201580029881.2A 2014-06-23 2015-06-18 导电沟槽深度的感应监测 Active CN106463380B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910937866.8A CN111211052B (zh) 2014-06-23 2015-06-18 导电沟槽深度的感应监测

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/312,503 US9754846B2 (en) 2014-06-23 2014-06-23 Inductive monitoring of conductive trench depth
US14/312,503 2014-06-23
PCT/US2015/036520 WO2015200101A1 (en) 2014-06-23 2015-06-18 Inductive monitoring of conductive trench depth

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201910937866.8A Division CN111211052B (zh) 2014-06-23 2015-06-18 导电沟槽深度的感应监测

Publications (2)

Publication Number Publication Date
CN106463380A CN106463380A (zh) 2017-02-22
CN106463380B true CN106463380B (zh) 2019-10-29

Family

ID=54870327

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201580029881.2A Active CN106463380B (zh) 2014-06-23 2015-06-18 导电沟槽深度的感应监测
CN201910937866.8A Active CN111211052B (zh) 2014-06-23 2015-06-18 导电沟槽深度的感应监测

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201910937866.8A Active CN111211052B (zh) 2014-06-23 2015-06-18 导电沟槽深度的感应监测

Country Status (6)

Country Link
US (3) US9754846B2 (https=)
JP (1) JP6640754B2 (https=)
KR (1) KR102383708B1 (https=)
CN (2) CN106463380B (https=)
TW (2) TWI649799B (https=)
WO (1) WO2015200101A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9754846B2 (en) * 2014-06-23 2017-09-05 Applied Materials, Inc. Inductive monitoring of conductive trench depth
TW201822953A (zh) 2016-09-16 2018-07-01 美商應用材料股份有限公司 基於溝槽深度的電磁感應監控進行的過拋光
US10427272B2 (en) * 2016-09-21 2019-10-01 Applied Materials, Inc. Endpoint detection with compensation for filtering
TWI816620B (zh) 2017-04-21 2023-09-21 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
TWI783037B (zh) * 2017-09-25 2022-11-11 美商應用材料股份有限公司 使用機器學習方式以產生製程控制參數的半導體製造
TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
JP7083279B2 (ja) 2018-06-22 2022-06-10 株式会社荏原製作所 渦電流センサの軌道を特定する方法、基板の研磨の進行度を算出する方法、基板研磨装置の動作を停止する方法および基板研磨の進行度を均一化する方法、これらの方法を実行するためのプログラムならびに当該プログラムが記録された非一過性の記録媒体
US11056351B2 (en) * 2018-08-31 2021-07-06 Synaptics Incorporated Process monitor for wafer thinning
US11009798B2 (en) 2018-09-05 2021-05-18 Micron Technology, Inc. Wafer alignment markers, systems, and related methods
US11251096B2 (en) 2018-09-05 2022-02-15 Micron Technology, Inc. Wafer registration and overlay measurement systems and related methods
CN118943037A (zh) 2018-09-26 2024-11-12 应用材料公司 针对原位电磁感应监测的边缘重建中的基板掺杂的补偿
JP7291558B2 (ja) * 2019-07-03 2023-06-15 株式会社荏原製作所 渦電流センサ
JP7341022B2 (ja) 2019-10-03 2023-09-08 株式会社荏原製作所 基板研磨装置および膜厚マップ作成方法
JP7507576B2 (ja) * 2020-03-17 2024-06-28 株式会社東京精密 研削装置
KR20250073489A (ko) 2020-05-14 2025-05-27 어플라이드 머티어리얼스, 인코포레이티드 연마 동안의 인-시튜 모니터링에 사용하기 위한 신경망을 훈련시키기 위한 기법 및 연마 시스템
TWI810069B (zh) 2020-06-08 2023-07-21 美商應用材料股份有限公司 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品
JP7447284B2 (ja) * 2020-06-24 2024-03-11 アプライド マテリアルズ インコーポレイテッド 研磨パッドの摩耗補償による基板層の厚さの決定
US11980995B2 (en) * 2021-03-03 2024-05-14 Applied Materials, Inc. Motor torque endpoint during polishing with spatial resolution

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1505554A (zh) * 2001-05-02 2004-06-16 Ӧ�ò��Ϲ�˾ 具有光学和涡流监视的集成结束点检测系统
CN1809444A (zh) * 2003-06-18 2006-07-26 株式会社荏原制作所 基片抛光设备和基片抛光方法
CN101978486A (zh) * 2008-04-17 2011-02-16 诺发系统股份有限公司 用于确定导电层厚度的方法和装置

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4000458A (en) 1975-08-21 1976-12-28 Bell Telephone Laboratories, Incorporated Method for the noncontacting measurement of the electrical conductivity of a lamella
US6268618B1 (en) * 1997-05-08 2001-07-31 Showa Denko K.K. Electrode for light-emitting semiconductor devices and method of producing the electrode
US6741076B2 (en) 2000-04-07 2004-05-25 Cuong Duy Le Eddy current measuring system for monitoring and controlling a CMP process
US6716644B2 (en) * 2002-05-17 2004-04-06 Micron Technology, Inc. Method for forming MRAM bit having a bottom sense layer utilizing electroless plating
US6848166B2 (en) 2002-05-28 2005-02-01 Hitachi Global Storage Technologies Method of protecting the pole piece of a magnetic head during the ion mill patterning of the yoke
US20040206621A1 (en) * 2002-06-11 2004-10-21 Hongwen Li Integrated equipment set for forming a low K dielectric interconnect on a substrate
US7128803B2 (en) 2002-06-28 2006-10-31 Lam Research Corporation Integration of sensor based metrology into semiconductor processing tools
US6858531B1 (en) * 2002-07-12 2005-02-22 Lsi Logic Corporation Electro chemical mechanical polishing method
US7112960B2 (en) 2003-07-31 2006-09-26 Applied Materials, Inc. Eddy current system for in-situ profile measurement
US7097537B1 (en) * 2003-08-18 2006-08-29 Applied Materials, Inc. Determination of position of sensor measurements during polishing
TWI352645B (en) * 2004-05-28 2011-11-21 Ebara Corp Apparatus for inspecting and polishing substrate r
US7777338B2 (en) 2004-09-13 2010-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring structure for integrated circuit chips
KR100660916B1 (ko) * 2006-02-09 2006-12-26 삼성전자주식회사 트렌치들의 패턴 밀도 및 깊이를 매개 변수로 이용하는도전층 평탄화 단계를 포함하는 반도체 소자의 제조 방법
JP4159594B1 (ja) * 2007-05-21 2008-10-01 株式会社東京精密 研磨終了時点の予測・検出方法とその装置
TWI444248B (zh) * 2007-08-15 2014-07-11 羅門哈斯電子材料Ｃｍｐ控股公司 化學機械研磨方法
US7821257B2 (en) * 2007-09-03 2010-10-26 Tokyo Seimitsu Co., Ltd Method and device for forecasting/detecting polishing end point and method and device for monitoring real-time film thickness
JP5080933B2 (ja) * 2007-10-18 2012-11-21 株式会社荏原製作所 研磨監視方法および研磨装置
KR20090074970A (ko) 2008-01-03 2009-07-08 삼성전자주식회사 가아드 링을 갖는 반도체 장치
US7960188B2 (en) 2008-05-15 2011-06-14 Ebara Corporation Polishing method
US8334582B2 (en) 2008-06-26 2012-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Protective seal ring for preventing die-saw induced stress
WO2010045162A2 (en) * 2008-10-16 2010-04-22 Applied Materials, Inc. Eddy current gain compensation
US8628376B2 (en) 2008-11-07 2014-01-14 Applied Materials, Inc. In-line wafer thickness sensing
US20110189856A1 (en) * 2010-01-29 2011-08-04 Kun Xu High Sensitivity Real Time Profile Control Eddy Current Monitoring System
TW201201957A (en) 2010-01-29 2012-01-16 Applied Materials Inc High sensitivity real time profile control eddy current monitoring system
US8252648B2 (en) * 2010-06-29 2012-08-28 Alpha & Omega Semiconductor, Inc. Power MOSFET device with self-aligned integrated Schottky and its manufacturing method
TWI521625B (zh) * 2010-07-30 2016-02-11 應用材料股份有限公司 使用光譜監測來偵測層級清除
TW201223702A (en) * 2010-08-06 2012-06-16 Applied Materials Inc Techniques for matching measured spectra to reference spectra for in-situ optical monitoring
WO2012044683A2 (en) * 2010-09-30 2012-04-05 Nexplanar Corporation Polishing pad for eddy current end-point detection
US20120276662A1 (en) 2011-04-27 2012-11-01 Iravani Hassan G Eddy current monitoring of metal features
US9023667B2 (en) 2011-04-27 2015-05-05 Applied Materials, Inc. High sensitivity eddy current monitoring system
US9018023B2 (en) 2011-08-16 2015-04-28 Globalfoundries Inc. Detection of surface defects by optical inline metrology during Cu-CMP process
US9205527B2 (en) * 2012-11-08 2015-12-08 Applied Materials, Inc. In-situ monitoring system with monitoring of elongated region
US9754846B2 (en) * 2014-06-23 2017-09-05 Applied Materials, Inc. Inductive monitoring of conductive trench depth

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1505554A (zh) * 2001-05-02 2004-06-16 Ӧ�ò��Ϲ�˾ 具有光学和涡流监视的集成结束点检测系统
CN1809444A (zh) * 2003-06-18 2006-07-26 株式会社荏原制作所 基片抛光设备和基片抛光方法
CN101978486A (zh) * 2008-04-17 2011-02-16 诺发系统股份有限公司 用于确定导电层厚度的方法和装置

Also Published As

Publication number Publication date
JP2017520124A (ja) 2017-07-20
WO2015200101A1 (en) 2015-12-30
TW201603134A (zh) 2016-01-16
JP6640754B2 (ja) 2020-02-05
TWI701733B (zh) 2020-08-11
US10103073B2 (en) 2018-10-16
US20190035699A1 (en) 2019-01-31
US20150371913A1 (en) 2015-12-24
CN111211052A (zh) 2020-05-29
TWI649799B (zh) 2019-02-01
US20170365532A1 (en) 2017-12-21
US10741459B2 (en) 2020-08-11
CN111211052B (zh) 2023-09-19
KR20170018960A (ko) 2017-02-20
TW201929080A (zh) 2019-07-16
US9754846B2 (en) 2017-09-05
KR102383708B1 (ko) 2022-04-05
CN106463380A (zh) 2017-02-22

Similar Documents

Publication Publication Date Title
CN106463380B (zh) 导电沟槽深度的感应监测
CN106415792B (zh) 用于感应监测导电沟槽深度的基板特征
US10350723B2 (en) Overpolishing based on electromagnetic inductive monitoring of trench depth
TWI736693B (zh) 用於原位電磁感應監測系統的芯配置
TWI753018B (zh) 具有補償濾波的端點偵測
CN111263681A (zh) 用于晶片上准确传感器位置确定的抖动校正

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant