TWI648913B - Anisotropic conductive film and connection structure - Google Patents

Anisotropic conductive film and connection structure Download PDF

Info

Publication number
TWI648913B
TWI648913B TW104135558A TW104135558A TWI648913B TW I648913 B TWI648913 B TW I648913B TW 104135558 A TW104135558 A TW 104135558A TW 104135558 A TW104135558 A TW 104135558A TW I648913 B TWI648913 B TW I648913B
Authority
TW
Taiwan
Prior art keywords
conductive
conductive particles
particles
conductive film
anisotropic conductive
Prior art date
Application number
TW104135558A
Other languages
English (en)
Other versions
TW201637290A (zh
Inventor
塚尾怜司
Original Assignee
日商迪睿合股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪睿合股份有限公司 filed Critical 日商迪睿合股份有限公司
Publication of TW201637290A publication Critical patent/TW201637290A/zh
Application granted granted Critical
Publication of TWI648913B publication Critical patent/TWI648913B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/001—Conductive additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/02—Ingredients treated with inorganic substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/27003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the layer preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/271—Manufacture and pre-treatment of the layer connector preform
    • H01L2224/2711—Shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2746—Plating
    • H01L2224/27462—Electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2746—Plating
    • H01L2224/27464—Electroless plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29357—Cobalt [Co] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29364—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29444—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29455—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862—Heat curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83874—Ultraviolet [UV] curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

本發明之異向性導電膜即便於將微間距之連接端子連接之情形時，亦可抑制短路之發生且使各連接端子充分地捕捉到導電粒子，提高導通可靠性，本發明之異向性導電膜具有導電粒子2排列成一行之導電粒子單元3、或導電粒子2排列成一行之導電粒子單元3與單獨之導電粒子2a於絕緣接著劑層4中呈格子狀配置之結構。選自鄰接之導電粒子單元3及單獨之導電粒子2a中之導電粒子彼此之最接近距離La為導電粒子2、2a之粒徑的0.5倍以上。

Description

異向性導電膜及連接構造體
本發明係關於一種異向性導電膜、及使用異向性導電膜進行連接之連接構造體。
於構裝IC(Integrated Circuit，積體電路)晶片等電子零件時廣泛使用異向性導電膜，近年來，就於高密度構裝中之應用之觀點而言，為了提高導電粒子捕捉效率或連接可靠性，降低短路發生率，提出將“使導電粒子接觸或接近地排列所得之粒子部位(即導電粒子單元)”呈格子狀配置於絕緣性接著劑層，根據電極圖案而改變該導電粒子單元彼此之間隔(專利文獻1)。
專利文獻1：日本特表2002-519473號公報
然而，關於專利文獻1所記載之異向性導電膜，藉由形成該單元之轉印型凹部彼此之距離而限制導電粒子單元彼此之間隔，故若由異向性導電膜所連接之電子零件之連接端子間距離為10μm左右之微間距， 則出現無法充分捕捉導電粒子之連接端子，或發生短路，導通可靠性有問題。
相對於此，本發明之課題在於即便於使用異向性導電膜連接微間距之連接端子之情形時，亦抑制短路之發生且使各連接端子充分地捕捉到導電粒子，提高導通可靠性。
本發明人發現：關於專利文獻1所記載之異向性導電膜，導電粒子單元彼此之間隔受到轉印型凹部之間隔限制，並非限制鄰接之導電粒子之最接近距離，進而，該轉印型凹部之間隔不適於微間距之連接端子，相對於此，藉由限制鄰接之導電粒子單元之導電粒子彼此之最接近距離，可解決上述課題，從而想到本發明。
即，本發明提供一種異向性導電膜，其為導電粒子排列成一行之導電粒子單元、或導電粒子排列成一行之導電粒子單元與單獨之導電粒子於絕緣接著劑層中呈格子狀配置者，且選自鄰接之導電粒子單元及單獨之導電粒子中之導電粒子彼此之最接近距離為導電粒子之粒徑之0.5倍以上。
又，本發明提供一種連接構造體，其使用上述異向性導電膜將第1電子零件之連接端子與第2電子零件之連接端子進行異向性導電連接。
根據本發明之異向性導電膜，由於導電粒子排列成一行之導電粒子單元、或導電粒子排列成一行之導電粒子單元與單獨之導電粒子呈格子狀配置，故而與使單獨之導電粒子呈格子狀排列之異向性導電膜相 比，可高密度地配置導電粒子，尤其藉由將選自鄰接之導電粒子單元及單獨之導電粒子中之導電粒子彼此之最接近距離設為特定範圍，可抑制短路之發生，且將異向性導電膜中之導電粒子之配置密度提高至最大限度。因此，即便由異向性導電膜所連接之連接端子為微間距，各連接端子處亦充分地捕捉到導電粒子，故可提高導通可靠性。
1A、1B、1C、1D、1E、1F、1G、1H、1I、1J、1K、1L‧‧‧異向性導電膜
2、2a‧‧‧導電粒子
3、3a、3b、3p、3q、3i、3j、3k‧‧‧導電粒子單元
4‧‧‧絕緣接著劑層
5‧‧‧絕緣接著劑層形成用組成物層
6‧‧‧剝離片
10、10p、10q‧‧‧模具
11‧‧‧凹部
20‧‧‧連接端子
D1‧‧‧異向性導電膜之長邊方向
D2‧‧‧異向性導電膜之短邊方向
La‧‧‧選自鄰接之導電粒子單元及單獨之導電粒子中之導電粒子彼此之最接近距離
La1‧‧‧鄰接之導電粒子單元之最接近距離的異向性導電膜之長邊方向之長度
Lb‧‧‧導電粒子單元的異向性導電膜之長邊方向之長度
Lc‧‧‧鄰接之導電粒子單元之導電粒子、且於異向性導電膜之長邊方向重疊之最接近導電粒子彼此的該長邊方向之距離
Ld‧‧‧連接端子間距離之方向的導電粒子單元之長度
Le‧‧‧導電粒子之粒徑
Lh‧‧‧於模具之凹部之長邊方向鄰接之凹部彼此之距離
Li‧‧‧模具之凹部的該凹部之長邊方向之長度
Lj‧‧‧於模具之凹部中填充導電粒子後之間隙的該凹部之長邊方向之長度之合計
Lx‧‧‧連接端子間距離
s1、s2、s3‧‧‧間隙
θ‧‧‧導電粒子單元之長邊方向相對於異向性導電膜之長邊方向的角度
圖1A係實施例之異向性導電膜1A中之導電粒子之配置圖。
圖1B係實施例之異向性導電膜1A之A-A剖面圖。
圖2A係製造實施例之異向性導電膜1A所使用之模具之俯視圖。
圖2B係製造實施例之異向性導電膜1A所使用之模具之B-B剖面圖。
圖3係實施例之異向性導電膜1B中之導電粒子之配置圖。
圖4係實施例之異向性導電膜1C中之導電粒子之配置圖。
圖5係實施例之異向性導電膜1D中之導電粒子之配置圖。
圖6係實施例之異向性導電膜1E中之導電粒子之配置圖。
圖7係實施例之異向性導電膜1F中之導電粒子之配置圖。
圖8係實施例之異向性導電膜1G中之導電粒子之配置圖。
圖9係實施例之異向性導電膜1H中之導電粒子之配置圖。
圖10係實施例之異向性導電膜1I中之導電粒子之配置圖。
圖11係實施例之異向性導電膜1J中之導電粒子之配置圖。
圖12係實施例之異向性導電膜1K中之導電粒子之配置圖。
圖13A係實施例之異向性導電膜1L中之導電粒子之配置圖。
圖13B係實施例之異向性導電膜1L之C-C剖面圖。
圖14A係實施例之異向性導電膜1L之製造方法之說明圖。
圖14B係實施例之異向性導電膜1L之製造方法之說明圖。
圖14C係實施例之異向性導電膜1L之製造方法之說明圖。
圖15A係對應於連接端子之導電粒子單元之較佳配置之說明圖。
圖15B係對應於連接端子之導電粒子單元之較佳配置之說明圖。
圖15C係對應於連接端子之導電粒子單元之較佳配置之說明圖。
以下，一面參照圖式一面詳細地說明本發明。再者，各圖中，同一元件符號表示相同或同等之構成要素。
圖1A係本發明之一實施例之異向性導電膜1A中之導電粒子2之配置圖。該異向性導電膜1A中，2個導電粒子2排列而成之導電粒子單元3於絕緣接著劑層4中呈格子狀配置。更具體而言，導電粒子單元3之中心配置於以虛線表示之正方格子之格子點。
於各導電粒子單元3內，導電粒子2可接觸，亦可隔開間隔地接近，關於各導電粒子單元3內之間隙之大小之合計(於一個導電粒子單元由n個導電粒子排列所構成時，為n-1個間隙之大小之合計)，為了進一步提高“導電粒子單元呈格子狀排列”此一本發明之效果，較佳為小於導電粒子2之粒徑Le且未達粒徑Le之1/4。再者，於導電粒子單元之長邊方向相對於異向性導電膜之長邊方向的角度θ較大之情形時，與角度θ 較小之情形相比，導電粒子單元3內之間隙之大小之合計可增大，如下述圖3所示，於該角度θ為90°之情形時，即便為導電粒子2之粒徑Le之1/2，亦可獲得本發明之效果。
又，本發明中，較佳為導電粒子2之粒徑Le一致。因此，於本發明中，只要無特別說明，導電粒子2之粒徑Le意指構成異向性導電膜之導電粒子2之平均粒徑。
各導電粒子單元3之長邊方向之朝向一致，且相對於異向性導電膜1A之長邊方向D1傾斜。更具體而言，導電粒子單元3之長邊方向相對於異向性導電膜1A之長邊方向的角度θ成為45°。又，各導電粒子單元3之長邊方向與形成導電粒子單元3之格子狀排列之直線(圖中之虛線所表示之直線)重疊。如此若使導電粒子單元3之長邊方向相對於異向性導電膜1A之長邊方向傾斜，則於使用異向性導電膜1A連接電子零件之連接端子之情形時，可增加連接端子20之導電粒子2之捕捉數。
圖1B係將異向性導電膜1A沿導電粒子單元3之長邊方向切斷之A-A剖面圖。如同圖所示，導電粒子2以一定深度埋於絕緣接著劑層4中。
本發明之異向性導電膜1A中，關於鄰接之導電粒子單元3之導電粒子彼此之最接近距離La(如下所述，於格子點處亦存在單獨之導電粒子之情形時，為選自鄰接之導電粒子單元及單獨之導電粒子中之導電粒子彼此之最接近距離La)，就儘可能提高異向性導電膜1A中之導電粒子2之配置密度，且防止於利用異向性導電膜1A將第1、第2電子零件進行異向性導電連接之情形時端子間發生短路之方面而言，為導電粒子2之粒 徑之0.5倍以上。此處，將最接近距離La設為導電粒子2之粒徑之0.5倍以上的原因如下。即，若使用異向性導電膜1A將第1、第2電子零件進行異向性導電連接，則於對向之第1、第2電子零件之連接端子間導電粒子2被壓扁，如圖1A中虛線圓所示般，導電粒子2之粒徑成為連接前之粒徑之1.2~1.3倍。因此，即便鄰接之導電粒子單元3之導電粒子彼此且距離最接近者雙方均於異向性導電連接時被最大限度地壓扁，亦確保該等間隔開至少粒徑之約1/4之間隙而防止發生短路，為此，將鄰接之導電粒子單元彼此之最接近距離La設為粒徑之0.5倍以上。
又，本發明中，較佳為將最接近距離La之異向性導電膜長邊方向D1之長度La1設為導電粒子2之粒徑Le之10倍以下。其原因在於：將導電粒子之個數密度設為一定值以上關係到利用連接端子20捕捉導電粒子之穩定進行，有助於微間距連接之穩定性。
進而，根據導電粒子單元3之格子狀之排列態樣，導電粒子單元3之異向性導電膜長邊方向D1之外切線與於同方向D1上鄰接之導電粒子單元3交疊(外切線貫穿鄰接單元之導電粒子)會提高導電粒子之個數密度，有助於微間距連接之穩定性，故而較佳。
再者，圖1A所示之異向性導電膜1A中，該最接近距離La之方向成為導電粒子單元3之長邊方向，但於本發明中，最接近距離La之方向並不限於導電粒子單元3之長邊方向。
於將異向性導電膜1A用於連接端子間之異向性導電連接之情形時，就易對連接前後之導電粒子進行比較之方面而言，較佳為使異向性導電膜1A之長邊方向D1與圖1A中二點鏈線所示之連接端子20之排列 方向(連接端子20之短邊方向)一致。換言之，使異向性導電膜1A之短邊方向D2與連接端子20之長邊方向一致。於該情形時，較佳為將各導電粒子單元3的異向性導電膜1A之長邊方向D1之長度Lb、利用異向性導電膜1A進行連接之連接端子20間之距離Lx、及導電粒子之粒徑Le設為滿足下式之關係。
Lx>(Lb+Le)
又，為鄰接之導電粒子單元3之導電粒子2且於異向性導電膜1A之長邊方向D1重疊之最接近之導電粒子(即，將導電粒子2投影至異向性導電膜1A之長邊方向上之情形時投影圖像重疊且最接近之導電粒子)彼此的該長邊方向D1之距離Lc較佳為設為導電粒子之粒徑之0.5倍以上。即，即便導電粒子單元3之格子狀排列本身相同，該距離Lc亦根據導電粒子單元3之長邊方向相對於異向性導電膜1A之長邊方向D1的角度θ而變化。因此，為了不論角度θ大小如何均防止鄰接之連接端子20間之短路，較佳為確保距離Lc為導電粒子之粒徑之0.5倍以上。
本發明中，就防止短路及連接端子間之連接穩定性之方面而言，導電粒子2之粒徑較佳為1~10μm，更佳為2~4μm。又，導電粒子2之配置密度較佳為2000~250000個/mm2，更佳為4000~100000個/mm2。導電粒子之配置密度係根據構成導電粒子單元3之導電粒子2之個數及導電粒子單元3之配置而適當調整。
本發明中，關於導電粒子2自身之構成、或絕緣接著劑層4之層構成或構成樹脂，並無特別限制。即，作為導電粒子2，可適當選用公知之用於異向性導電膜者。例如，可列舉：鎳、鈷、銀、銅、金、鈀等金 屬粒子、金屬被覆樹脂粒子等。亦可併用2種以上。
作為絕緣接著劑層4，可適當採用公知之異向性導電膜中所使用之絕緣性樹脂層。例如，可使用含丙烯酸酯化合物及光自由基聚合起始劑之光自由基聚合型樹脂層、含丙烯酸酯化合物及熱自由基聚合起始劑之熱自由基聚合型樹脂層、含環氧化合物及熱陽離子聚合起始劑之熱陽離子聚合型樹脂層、含環氧化合物及熱陰離子聚合起始劑之熱陰離子聚合型樹脂層等。又，該等樹脂層視需要分別可設為經聚合而成者。又，亦可由數層樹脂層形成絕緣接著劑層4。
進而，視需要亦可於絕緣接著劑層4中添加二氧化矽微粒子、氧化鋁、氫氧化鋁等絕緣性填料。絕緣性填料之調配量較佳為相對於形成絕緣接著劑層之樹脂100質量份設為3~40質量份。藉此，即便於異向性導電連接時絕緣接著劑層4熔融，亦可抑制導電粒子2因熔融之樹脂而不必要地移動。
作為導電粒子2以上述配置固定於絕緣接著劑層4之異向性導電膜之製造方法，只要利用機械加工或雷射加工、光微影法等公知方法而製作具有對應於導電粒子單元3之配置之凹部的模具，向該模具內裝入導電粒子，於其上填充絕緣接著劑層形成用組成物，使之硬化後自模具取出，視需要進而積層絕緣性接著劑層即可。再者，作為裝有導電粒子2之模具，亦可使用如下模具：暫時製作剛性較強之模具，利用該模具，以剛性較低之材質所形成者。
圖2A係於製造異向性導電膜1A時，為了以上述配置固定導電粒子2所使用之模具10之俯視圖，圖2B係於模具10中填充有導電粒 子2之狀態之B-B剖面圖。該模具10具有能夠填充兩個導電粒子2之矩形之凹部11。本實施例之異向性導電膜1A中，於凹部11之長邊方向上鄰接之凹部11彼此之距離Lh對應於鄰接之導電粒子單元3彼此之最接近距離La，故該距離Lh設為導電粒子2之粒徑之0.5倍以上。又，凹部11之長邊方向之長度Li取決於凹部11內所填充之導電粒子2之個數，較佳為將於凹部11填充導電粒子2後之間隙s1、s2、s3的凹部11之長邊方向之長度合計Lj設為未達導電粒子2之粒徑之1/4之長度。其原因在於：為了進一步提高導電粒子單元呈格子狀排列之本發明之效果，而使導電粒子以導電粒子單元之形式呈格子狀排列之狀態能夠明確地與導電粒子未形成單元而呈格子狀排列之狀態區分開。
另一方面，為了於絕緣接著劑層4以上述配置設置導電粒子2，亦可為如下方法：於絕緣接著劑層形成用組成物層之上設置以規定配置形成有貫通孔之構件，自其上供給導電粒子2，使之通過貫通孔等方法。
本發明之異向性導電膜可採用各種態樣。例如，關於圖3所示之異向性導電膜1B、及圖4所示之異向性導電膜1C，導電粒子2自身之排列分別與圖1A所示之異向性導電膜1A同樣地，導電粒子單元3係由兩個導電粒子2形成，各導電粒子單元3之長邊方向之朝向一致，導電粒子單元3呈正方格子狀配置，但圖3所示之異向性導電膜1B中，導電粒子單元3之長邊方向相對於異向性導電膜1B之長邊方向的角度θ為90°，圖4所示之異向性導電膜1C中，導電粒子單元3之長邊方向相對於異向性導電膜1C之長邊方向的角度θ為0°。
關於角度θ，就防止短路之觀點而言，較佳為接近90°。又， 就異向性導電連接時導電粒子之捕捉之觀點而言，較佳為接近0°。因此，當兼顧形成各導電粒子單元3之導電粒子數及各導電粒子單元3之長邊方向之角度θ時，就同時實現防止短路及捕捉導電粒子之觀點而言，角度θ較佳為6~84°，更佳為16~74°。
圖5所示之異向性導電膜1D為如下者：於圖1A所示之異向性導電膜1A中，以導電粒子單元3之中心點形成六方格子之方式配置導電粒子單元3，並將導電粒子單元3之長邊方向相對於異向性導電膜1D之長邊方向的角度θ設為30°。
另外，本發明中，導電粒子單元3之格子狀排列可採用各種態樣。例如亦可將導電粒子單元3呈斜方格子狀、長方格子狀等配置。
圖6所示之異向性導電膜1E為如下者：由使3個導電粒子2排列成一行者形成各導電粒子單元3，將各導電粒子單元3配置成斜向排列，並將各導電粒子單元3之長邊方向相對於異向性導電膜1E之長邊方向的角度θ設為45°。
如此，構成導電粒子單元3之導電粒子2之個數不限於2個，可根據導電粒子粒徑、所連接之端子間距離、端子之尺寸及佈局等決定，故並無特別上限。其原因在於：即便發展微間距化或小面積化，只要有對應於導電粒子粒徑之充足之端子間距離，則短路發生之風險減小。就進一步減小短路發生風險，穩定連接構造體製造時之品質之方面而言，亦可使未形成導電粒子單元之單獨之導電粒子2a存在於呈格子狀配置之導電粒子單元之間，又，可將構成一個導電粒子單元3之導電粒子2設為2~8個，更佳為設為2~5個。
例如亦可如圖7所示之異向性導電膜1F般，於呈正方格子狀配置之導電粒子單元3之單位格子之中心，存在未形成導電粒子單元之單獨之導電粒子2a。藉此，即便於微間距之連接端子使用異向性導電膜之情形時，亦可提高連接端子之導電粒子之捕捉性，並且能夠避免短路。
又，亦可如圖8所示之異向性導電膜1G般，將形成導電粒子單元之導電粒子數不同之數種導電粒子單元3i、3k呈格子狀配置，且於格子點以外處配置單獨之導電粒子2a。再者，於將形成導電粒子單元之導電粒子數不同之數種導電粒子單元3i、3k呈格子狀配置之情形時，只要將各導電粒子單元3i、3k之中心配置於格子點處即可。
於將形成導電粒子單元之導電粒子數不同之數種導電粒子單元呈格子狀配置之情形時，亦可如圖9所示之異向性導電膜1H般，使各導電粒子單元3i、3j、3k之長邊方向一致，且沿其短邊方向所配置之導電粒子單元之導電粒子數反覆逐漸增加或減少。再者，於圖9中，將3種導電粒子單元3i、3j、3k之長邊方向設為異向性導電膜1H之長邊方向，但只要各導電粒子單元3i、3j、3k之長邊方向一致，則該長邊方向可設為任意方向。
藉由將形成導電粒子單元之導電粒子數不同之數種導電粒子單元以上述方式進行設置，可提高小面積之凸塊之導電粒子之補捉效率，且抑制短路之發生，故可進一步應對微間距之連接。
本發明中，亦可將導電粒子單元與單獨之導電粒子呈格子狀配置。換言之，單獨之導電粒子亦可存在於格子點。例如，可如圖10所示之異向性導電膜1I般，將形成導電粒子單元之導電粒子數不同之3種導電 粒子單元3i、3j、3k、與單獨之導電粒子2a呈格子狀配置。於該情形時，將選自導電粒子單元3i、3j、3k及單獨之導電粒子2a中之導電粒子彼此之最接近距離La設為導電粒子2、2a之導電粒子粒徑之0.5倍以上。
於將導電粒子數不同之數種導電粒子單元與單獨之導電粒子呈格子狀配置時，可如圖10所示之異向性導電膜1I般，形成沿異向性導電膜之短邊方向排列之導電粒子單元3i、3j、3k及單獨之導電粒子2a各者之導電粒子數反覆逐漸增加及減少，亦可如圖11所示之異向性導電膜1J般，反覆逐漸增加或減少。於如圖11所示般導電粒子反覆逐漸增加或減少之情形時，異向性導電膜內小區域中之導電粒子之個數密度之不均變少。藉此，例如即便於貼附異向性導電膜時，膜之貼附位置在連接端子之長邊方向上略微(作為膜寬之數%亦為數十μm以上)偏離，連接端子所捕捉之導電粒子之個數之差異亦較小，並且無位置偏移時與有偏移時對導電粒子施加之擠壓力之差異變少，故較佳。
此處，作為微間距之連接端子，可列舉：其連接面之大小為寬度4~60μm、長度400μm以下(下限與寬度等倍)者，或者連接面之寬度未達導電粒子粒徑之4倍或未達導電粒子單元3之長邊方向之長度之2倍者，連接端子間之最小距離為例如8~30μm者。又，於連接端子之面積較小之情形時，有時連接端子間距離相對變大，故並不限定於上述端子間距離。再者，減小端子面積係基於高積體化等技術上之原因，除此以外，因用作端子之金屬(Au等)之削減而於成本方面有優勢，故能夠應對較小端子面積之異向性導電膜意義重大。
於將構成導電粒子單元3之導電粒子設為3個以上之情形 時，就提高微間距時之導電粒子之捕捉性之方面而言，各導電粒子單元3中導電粒子排列成一行。
圖12所示之異向性導電膜1K係使導電粒子單元3之長邊方向不同而呈現鋸齒狀者。更具體而言，儘管導電粒子單元3(3a、3b)之中心點與圖3所示之異向性導電膜1B同樣地呈正方格子狀配置，但導電粒子單元3內之導電粒子2之排列方向相對於異向性導電膜1G之長邊方向為0°之導電粒子單元3a、與90°之導電粒子單元3b呈鋸齒狀配置。
如此，藉由導電粒子單元3內之導電粒子2之排列方向取互不相同之第1方向與第2方向，亦可同時實現提高微間距之連接端子20之導電粒子之捕捉性與避免短路。
圖13A所示之異向性導電膜1L於俯視時，導電粒子2之配置與圖1所示之異向性導電膜1A相同，但如圖13B之C-C剖面圖所示，於異向性導電膜1L之厚度方向之第1深度配置有導電粒子2之第1導電粒子單元3p、與於第2深度配置有導電粒子2之第2導電粒子單元3q在導電粒子單元3p、3q之短邊方向上交替配置。
作為此種異向性導電膜1L之製造方法，如圖14A所示，例如使用用以對第1導電粒子單元3p配置導電粒子之第1模具10p及用以對第2導電粒子單元3q配置導電粒子之第2模具10q，於各模具10p、10q之凹部11填充導電粒子2，如圖14B所示，於各模具10p、10q上配置形成於剝離片6上之絕緣接著劑層形成用組成物層5，將該絕緣接著劑層形成用組成物層5壓入至模具10p、10q之凹部11內，藉由乾燥、加熱等使絕緣接著劑層形成用組成物層5半硬化。繼而，將半硬化之絕緣接著劑層形成用組 成物層5自模具10p、10q剝離，如圖14C所示般使該等對向，進行加壓，藉由加熱或紫外線照射等使之完全硬化。如此可獲得圖13B所示之剖面之異向性導電膜1L。
根據如此使用第1模具10p及第2模具10q之製造方法，與使用單一模具之情形相比，可擴寬各模具中之凹部11之配置間距，故可提高異向性導電膜1L之生產性。
本發明之異向性導電膜可較佳地用於將IC晶片、IC模組、FPC(flexible print circuit)等第1電子零件之連接端子與FPC、玻璃基板、塑膠基板、硬質基板、陶瓷基板等第2電子零件之連接端子進行異向性導電連接。如此獲得之連接構造體亦為本發明之一部分。又，亦可將IC晶片或IC模組積層而使第1電子零件彼此進行異向性導電連接。如此獲得之連接構造體亦為本發明之一部分。
於使用本發明之異向性導電膜連接電子零件之連接端子之情形時，較佳為如圖15A之(a)所示般於構成導電粒子單元3之導電粒子2不處於連接端子20之邊緣之位置狀態下進行連接，只要以如同圖(b)所示般連接端子20之端子間距離Lx、該端子間距離之方向之導電粒子單元3之長度Ld及導電粒子2之粒徑Le的關係滿足Lx>(Ld+Le)
之方式，相對於連接端子20之端子間距離Lx，調整該端子間距離Lx之方向之導電粒子單元3之長度Ld及導電粒子2之粒徑Le即可。
相對於此，若如圖15B之(a)所示般不滿足Lx>(Ld+Le)
則於連接端子20間易發生短路。然而，即便構成導電粒子單元3之導電粒子2之粒徑Le或導電粒子2之排列數相同，亦只要如同圖(b)所示般使導電粒子單元3之長邊方向相對於端子間距離Lx之方向傾斜，縮短端子間距離Lx之方向之導電粒子單元3之長度Ld以滿足上述式即可。
又，亦可如圖15C所示般藉由減小導電粒子2之粒徑Le以滿足上述式。
實施例
以下，藉由實施例具體地說明本發明。
實施例1~11及比較例1、2
<異向性導電膜之製造之概要>
製造如下異向性導電膜：導電粒子單元之中心排列形成長方格子，每一導電粒子單元之導電粒子之個數(以下稱為連結個數)、導電粒子之粒徑(μm)、導電粒子單元之最大長度(μm)、導電粒子單元之長邊方向相對於異向性導電膜之長邊方向的角度θ、鄰接之導電粒子單元之導電粒子彼此之最接近距離La(μm)、導電粒子之配置密度(個/mm2)如表1所示之數值。
於該情形時，作為導電粒子，使用以如下方式製作之導電粒子(粒徑2μm、3μm或6μm)。
<導電粒子(粒徑2μm、3μm或6μm)之製作>
於二乙烯苯、苯乙烯、甲基丙烯酸丁酯之混合比經調整之溶液中，投入過氧化苯甲醯作為聚合起始劑，一面以高速均勻攪拌一面加熱而進行聚合反應，藉此獲得微粒子分散液。藉由對上述微粒子分散液進行過濾、減 壓乾燥而獲得作為微粒子凝聚體之塊體。進而，藉由將上述塊體粉碎並加以分級，而獲得平均粒徑2μm、3μm及6μm之二乙烯苯系樹脂粒子。
使如此所獲得之二乙烯苯系樹脂粒子(5g)藉由浸漬法而載持鈀觸媒。其次，對於該樹脂粒子，使用由硫酸鎳六水合物、次亞磷酸鈉、檸檬酸鈉、三乙醇胺及硝酸鉈所製備之無電解鍍鎳液(pH值12，鍍敷液溫50℃)進行無電解鍍鎳，而獲得於表面形成有鍍鎳層(金屬層)之覆鎳樹脂粒子作為導電粒子。所獲得之導電粒子之平均粒徑為2μm、3μm及6μm。
於使氯金酸鈉10g溶解於離子交換水1000mL所獲得之溶液中，混合上述覆鎳樹脂粒子12g而調整水性懸浮液。藉由於所獲得之水性懸浮液中投入硫代硫酸銨15g、亞硫酸銨80g、及磷酸氫銨40g而調整鍍金浴。於所獲得之鍍金浴中投入羥胺4g後，使用氨將鍍金浴之pH值調整為9，並且使浴溫於60℃維持15~20分鐘左右，藉此獲得平均粒徑2μm、3μm及6μm之覆金/鎳樹脂粒子，將其作為導電粒子。
<異向性導電膜之製造>
以如下方式製造該導電粒子以表1之排列包含於絕緣接著劑層中之異向性導電膜。首先，製備含有苯氧基樹脂(新日鐵住金化學股份有限公司，YP-50)60質量份、環氧樹脂(三菱化學股份有限公司，jER828)40質量份、陽離子聚合起始劑(潛伏性硬化劑)(三新化學工業股份有限公司，SI-60L)2質量份之熱聚合性之絕緣性樹脂組成物，將其塗佈於膜厚50μm之PET膜上，於80℃之烘箱中乾燥5分鐘，而於PET膜上形成厚度20μm之黏著層。
其次，製作凸部之配置成為表1之導電粒子單元之配置的模具，使透明性樹脂之顆粒物熔融而流入該模具，加以冷卻而使之凝固，藉此製作凹部成為表1之導電粒子單元之配置的樹脂模具，向該樹脂模具中填充導電粒子，於其上被覆上述黏著層，藉由紫外線照射使該黏著層硬化後將其自模具剝離，從而製造異向性導電膜。
評價
以如下方式評價(a)導通電阻、(b)短路數、(c)每1個凸塊之粒子最小捕捉數、(d)凸塊間之粒子狀態。將結果示於表1A及表1B。
(a)導通電阻
將有效連接面積(凸塊與基板相對向之面積)不同之3種評價用連接物之導通電阻連接。
(a-1)導通電阻(有效連接面積400μm2)
將各實施例及比較例之異向性導電膜夾於導通電阻評價用IC與玻璃基板之間，進行加熱加壓(180℃，80MPa，5秒)而獲得各評價用連接物，關於該評價用連接物之導通電阻，使用數位萬用表，利用4端子法測定以2mA之電流通電時之值。若未達1Ω，則於實用上無問題。
此處，關於該各評價用IC及玻璃基板，該等之端子圖案相對應，尺寸如下所述。
又，於使用異向性導電膜連接評價用IC與玻璃基板之情形時，使異向性導電膜之長邊方向與凸塊之短邊方向(端子間距離之方向)一致。將結果示於表1A。
導通電阻評價用IC
外徑0.7×20mm
厚度0.2mm
凸塊規格鍍金，高度12μm，尺寸10×40μm，凸塊間距離10μm
玻璃基板
玻璃材質Corning公司製造
外徑30×50mm
厚度0.5mm
電極ITO配線
(a-2)導通電阻(有效連接面積300μm2)及(a-3)導通電阻(有效連接面積200μm2)
將導通電阻評價用IC之凸塊規格變更為以下者，故意使評價用IC之對準(alignment)於凸塊之短邊(寬)方向偏離6μm及8μm，將有效連接面積設為300μm2或200μm2，除此以外，以與(a-1)相同之方式連接而獲得評價用連接物，以與(a-1)相同之方式測定其導通電阻。將結果示於表1B。再者，表1B中顯示實質之凸塊大小及IC之凸塊-凸塊間之間隔(即，同一IC之凸塊間之水平方向之導體距離)的數值。
凸塊規格鍍金，高度12μm，尺寸12×50μm，凸塊間距離10μm
(b)短路數
計測實施例1~11及比較例1~2之導通電阻評價用連接物之100個凸塊中發生短路之通道數，設為短路數。
再者，使用下述短路發生率評價用IC，測定實施例1~11之異向性導電膜之短路發生率，結果全部未達200ppm，表示實用上無問題。
短路發生率評價用IC
梳齒TEG(test element group，測試元件組)
外徑1.5×13mm
厚度0.5mm
凸塊規格鍍金，高度15μm，尺寸25×140μm，凸塊間距離7.5μm
(c)每1個凸塊之粒子最小捕捉數
使用各實施例及比較例之異向性導電膜，以與(a-1)相同之方式獲得評價用連接物(100個凸塊)，計測各凸塊之粒子捕捉數，求出其最小數。再者，於該連接中，亦使異向性導電膜之長邊方向與凸塊之短邊方向(端子間距離之方向)一致。將結果示於表1A。
又，以與(a-2)、(a-3)相同之方式獲得評價用連接物(各100個凸塊)，以與上述相同之方式求出各凸塊之粒子捕捉數之最小數，基於下述基準進行評價。若評價為C以上，則於實用上無問題。將結果示於表1B。
(評價基準)
A(非常良好)：10個以上
B(良好)：5個以上且未達10個
C(普通)：3個以上且未達5個
D(不良)：未達3個
(d)凸塊間之粒子狀態
針對(c)之評價用連接物(即，以與(a-1)、(a-2)、(a-3)相同之方式所獲得之評價用連接物)，計數於凸塊-凸塊間由未與凸塊連接之導電粒子 相互連結所形成之導電粒子群之產生數。表1A中顯示關於以與(a-1)相同之方式所獲得之評價用連接物，每100個凸塊-凸塊間，相對於連接前之狀態，導電粒子單元或導電粒子連結而成之導電粒子群之計數值。根據該計數值，可評價異向性導電連接時導電粒子之移動難易度(即，導電粒子之接觸所導致之短路之發生風險)。
以與(a-2)、(a-3)相同之方式獲得之評價用連接物由於故意使對準偏離，故而無法和以與(a-1)相同之方式獲得之評價用連接物於相同評價尺度下進行比較，但對100個凸塊-凸塊間進行觀察，結果可確認未明顯變差。又，關於該等評價用連接物，隨機抽取可觀察到發生短路之部位，確認連接物之剖面狀態，結果無法確認以與(a-2)、(a-3)相同之方式獲得之評價用連接物之剖面形狀相較於以與(a-1)相同之方式獲得之評價用連接物明顯變差。
根據表1A可知，實施例1~11中，導電粒子單元之最接近距離La為導電粒子之粒徑之0.5~3倍之範圍，導通電阻為0.4~0.6Ω，未形成導電粒子單元之比較例1中，儘管導電粒子之最接近距離為導電粒子之粒徑之0.5倍，但導通電阻亦高達0.8Ω，短路之發生頻度亦相對較高。
又，根據比較例2可知，若導電粒子單元之最接近距離La未達導電粒子之粒徑之0.5倍，則短路數明顯增多。
進而，關於比較例1、比較例2，根據凸塊間之粒子狀態可知，由於導電粒子之粒徑相對於凸塊間距離而言過大，故不適合於凸塊佈局。尤其關於比較例2，可知每1個凸塊之粒子最小捕捉數為0，出現凸塊未捕捉到導電粒子之狀態，異向性連接不穩定。由此可知，僅藉由導電粒子粒徑之增大所致之導電粒子佔有面積率之增大，無法應對微間距之異向性連接。
進而，根據實施例1~11可知，於導電粒子單元之最接近距離La相互為相同時，若導電粒子單元之長邊方向相對於異向性導電膜之長邊方向傾斜，則每1個凸塊之粒子最小捕捉數增加，導通可靠性較高。
另一方面，根據表1B可知，(a-2)及(a-3)中可獲得與(a-1)同等或其以上之導通性能，每1個凸塊之粒子最小捕捉數亦良好。
又，以與(a-1)同樣地測定將(a-1)、(a-2)及(a-3)所獲得之評價用連接物於溫度85℃、濕度85%RH之恆溫槽中放置500小時後之導通電阻。結果確認實施例之評價用連接物之導通電阻均未達5Ω，確認於實用上無問題。
參考例1~5
設為表2所示之導電粒子之連結個數及配置，以與實施例1相同之方式製造異向性導電膜，進行評價。將結果示於表2。
根據表2可知，關於導電粒子單元之導電粒子之連結個數，於異向性導電膜之短邊方向(凸塊之長邊方向)上無特別限制(參考例1、2)，但於凸塊間距離之方向上，若導電粒子單元之最大長度與導電粒子粒徑的和大於凸塊間距離之大小，則短路數變多(參考例3~5)。因此可知，即便於使用實施例之異向性導電膜之情形時，亦較佳為根據導電粒子單元之最大長度與連接端子之端子間距離而調整異向性導電膜之朝向。
若如參考例4、5般單元長度相對於凸塊間距離成為90%以上，則發生短路，又，根據凸塊間之粒子狀態之評價結果可知，於凸塊間單元彼此接觸者增加，故與凸塊間距離平行之單元長度必須設定為規定個數及大小。
實施例1、12~14
設為表3所示之導電粒子之連結個數之配置，以與實施例1相同之方式製造異向性導電膜，進行評價。將結果示於表3。
根據表3可知，於導電粒子單元之長邊方向與異向性導電膜之短邊方向(連接端子之長邊方向)一致之情形時，即便將各導電粒子單元內之導電粒子之間隙於0至導電粒子之粒徑之1/2之大小之間任意變更，亦能夠形成導電粒子單元呈格子狀排列之狀態，從而減少短路數，提高導通可靠性。

Claims (10)

  1. 一種異向性導電膜，其係導電粒子排列成一行之導電粒子單元、或導電粒子排列成一行之導電粒子單元與單獨之導電粒子於絕緣接著劑層中呈格子狀配置者，且選自鄰接之導電粒子單元及單獨之導電粒子中之導電粒子彼此之最接近距離為導電粒子粒徑之0.5倍以上。
  2. 如申請專利範圍第1項之異向性導電膜，其中，為鄰接之導電粒子單元之導電粒子且於異向性導電膜之長邊方向重疊之最接近之導電粒子彼此的該長邊方向之距離為導電粒子粒徑之0.5倍以上。
  3. 如申請專利範圍第1項之異向性導電膜，其中，各導電粒子單元之長邊方向相對於異向性導電膜之長邊方向傾斜。
  4. 如申請專利範圍第2項之異向性導電膜，其中，各導電粒子單元之長邊方向相對於異向性導電膜之長邊方向傾斜。
  5. 如申請專利範圍第1至4項中任一項之異向性導電膜，其配置有形成導電粒子單元之導電粒子數不同之數種導電粒子單元。
  6. 如申請專利範圍第1至4項中任一項之異向性導電膜，其具有該單元中之導電粒子之排列方向為第1方向之導電粒子單元、與第2方向之導電粒子單元作為導電粒子單元。
  7. 如申請專利範圍第5項之異向性導電膜，其具有該單元中之導電粒子之排列方向為第1方向之導電粒子單元、與第2方向之導電粒子單元作為導電粒子單元。
  8. 一種連接構造體，係使用申請專利範圍第1至7項中任一項之異向性導電膜將第1電子零件之連接端子與第2電子零件之連接端子進行異向性導電連接而成。
  9. 如申請專利範圍第8項之連接構造體，其中，連接端子間之距離大於該連接端子間之距離方向之導電粒子單元之長度與導電粒子之粒徑的和。
  10. 一種連接構造體之製造方法，係介隔申請專利範圍第1至7項中任一項之異向性導電膜而將第1電子零件與第2電子零件進行異向性導電連接。
TW104135558A 2014-10-28 2015-10-28 Anisotropic conductive film and connection structure TWI648913B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP2014-219788 2014-10-28
JP2014219788 2014-10-28

Publications (2)

Publication Number Publication Date
TW201637290A TW201637290A (zh) 2016-10-16
TWI648913B true TWI648913B (zh) 2019-01-21

Family

ID=55857504

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104135558A TWI648913B (zh) 2014-10-28 2015-10-28 Anisotropic conductive film and connection structure

Country Status (6)

Country Link
US (1) US9953947B2 (zh)
JP (1) JP6661969B2 (zh)
KR (1) KR101937601B1 (zh)
CN (1) CN106797082B (zh)
TW (1) TWI648913B (zh)
WO (1) WO2016068169A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI675382B (zh) 2012-08-01 2019-10-21 日商迪睿合股份有限公司 異向性導電膜之製造方法、異向性導電膜、及連接結構體
KR20210082571A (ko) * 2012-08-29 2021-07-05 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름 및 그 제조 방법
CN112421262B (zh) 2014-11-17 2023-06-20 迪睿合株式会社 各向异性导电膜、连接结构体及其制造方法
JP7274811B2 (ja) 2016-05-05 2023-05-17 デクセリアルズ株式会社 異方性導電フィルム
WO2017191772A1 (ja) * 2016-05-05 2017-11-09 デクセリアルズ株式会社 フィラー配置フィルム
CN113707361B (zh) * 2016-05-05 2023-08-22 迪睿合株式会社 各向异性导电膜
US20170338204A1 (en) * 2016-05-17 2017-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Device and Method for UBM/RDL Routing
JP7077963B2 (ja) * 2017-01-27 2022-05-31 昭和電工マテリアルズ株式会社 絶縁被覆導電粒子、異方導電フィルム、異方導電フィルムの製造方法、接続構造体及び接続構造体の製造方法
JP2019029135A (ja) * 2017-07-27 2019-02-21 日立化成株式会社 異方性導電フィルム及びその製造方法、並びに接続構造体及びその製造方法
KR102519126B1 (ko) * 2018-03-30 2023-04-06 삼성디스플레이 주식회사 표시 장치
KR20210021544A (ko) * 2018-06-26 2021-02-26 쇼와덴코머티리얼즈가부시끼가이샤 이방성 도전 필름과 그 제조 방법 및 접속 구조체의 제조 방법
US20200156291A1 (en) * 2018-11-21 2020-05-21 Shin-Etsu Chemical Co., Ltd. Anisotropic film and method for manufacturing anisotropic film
IL292146A (en) * 2019-10-15 2022-06-01 Univ Kyoto Conductive layer, dispersion, manufacturing methods therefor and a device comprising a conductive layer
US20230106977A1 (en) * 2020-03-26 2023-04-06 Sekisui Chemical Co., Ltd. Resin particles, electrically conductive particles, electrically conductive material, and connection structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09320345A (ja) * 1996-05-31 1997-12-12 Whitaker Corp:The 異方導電性フィルム
US20070212521A1 (en) * 2004-03-30 2007-09-13 Tokai Rubber Industries, Ltd. Anisotropic Conductive Film and a Method of Manufacturing the Same
TW200941101A (en) * 2008-03-27 2009-10-01 Sony Chem & Inf Device Corp Anisotropic conductive film, and connected structure and manufacturing method for the same
TW201216301A (en) * 2010-10-08 2012-04-16 Cheil Ind Inc Anisotropic conductive film
TW201422745A (zh) * 2012-08-03 2014-06-16 Dexerials Corp 異向性導電膜及其製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5502889A (en) * 1988-06-10 1996-04-02 Sheldahl, Inc. Method for electrically and mechanically connecting at least two conductive layers
JPH0582199A (ja) * 1991-05-28 1993-04-02 Minato Electron Kk 異方導電性コネクタを有するコネクタ配置構造および異方導電性コネクタ
US20010008169A1 (en) * 1998-06-30 2001-07-19 3M Innovative Properties Company Fine pitch anisotropic conductive adhesive
JP2006049783A (ja) * 2004-06-29 2006-02-16 Yuji Suda 異方性導電接着フィルムの製造方法と電極接続方法
JP4887700B2 (ja) * 2005-09-09 2012-02-29 住友ベークライト株式会社 異方導電性フィルムおよび電子・電機機器
JP4735229B2 (ja) * 2005-12-12 2011-07-27 住友ベークライト株式会社 異方導電性フィルム
JP5145110B2 (ja) * 2007-12-10 2013-02-13 富士フイルム株式会社 異方導電性接合パッケージの製造方法
JP5049176B2 (ja) * 2008-03-27 2012-10-17 ソニーケミカル＆インフォメーションデバイス株式会社 接合体及びその製造方法、並びに、異方性導電材料及びその製造方法
JP6245792B2 (ja) 2012-03-29 2017-12-13 デクセリアルズ株式会社 導電性粒子、回路接続材料、実装体、及び実装体の製造方法
US10513635B2 (en) * 2014-10-31 2019-12-24 Dexerials Corporation Anisotropic conductive film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09320345A (ja) * 1996-05-31 1997-12-12 Whitaker Corp:The 異方導電性フィルム
US20070212521A1 (en) * 2004-03-30 2007-09-13 Tokai Rubber Industries, Ltd. Anisotropic Conductive Film and a Method of Manufacturing the Same
TW200941101A (en) * 2008-03-27 2009-10-01 Sony Chem & Inf Device Corp Anisotropic conductive film, and connected structure and manufacturing method for the same
TW201216301A (en) * 2010-10-08 2012-04-16 Cheil Ind Inc Anisotropic conductive film
TW201422745A (zh) * 2012-08-03 2014-06-16 Dexerials Corp 異向性導電膜及其製造方法

Also Published As

Publication number Publication date
US20170309590A1 (en) 2017-10-26
JP2016085983A (ja) 2016-05-19
JP6661969B2 (ja) 2020-03-11
KR101937601B1 (ko) 2019-01-10
KR20170039284A (ko) 2017-04-10
TW201637290A (zh) 2016-10-16
CN106797082A (zh) 2017-05-31
WO2016068169A1 (ja) 2016-05-06
CN106797082B (zh) 2019-07-30
US9953947B2 (en) 2018-04-24

Similar Documents

Publication Publication Date Title
TWI648913B (zh) Anisotropic conductive film and connection structure
JP6380591B2 (ja) 異方導電性フィルム及び接続構造体
JP6504307B1 (ja) 異方導電性フィルム
CN107534231B (zh) 各向异性导电性膜及连接构造体
JP2023001341A (ja) 異方導電性フィルム及び接続構造体
CN110499119B (zh) 各向异性导电性膜及连接构造体
CN107112314B (zh) 多层基板
CN107431294A (zh) 各向异性导电性膜及连接构造体
JP2017175093A (ja) 電子部品、接続体、電子部品の設計方法
JP6769721B2 (ja) 電子部品、異方性接続構造体、電子部品の設計方法
TWI756310B (zh) 連接結構體
CN112534650A (zh) 各向异性导电薄膜
TWI747898B (zh) 異向性導電膜
TWI814953B (zh) 異向性導電膜、連接構造體、及連接構造體之製造方法