TWI648784B - 電漿處理裝置 - Google Patents
電漿處理裝置 Download PDFInfo
- Publication number
- TWI648784B TWI648784B TW106114791A TW106114791A TWI648784B TW I648784 B TWI648784 B TW I648784B TW 106114791 A TW106114791 A TW 106114791A TW 106114791 A TW106114791 A TW 106114791A TW I648784 B TWI648784 B TW I648784B
- Authority
- TW
- Taiwan
- Prior art keywords
- tray
- substrate
- electrode
- electrostatic chuck
- support portion
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 252
- 239000000112 cooling gas Substances 0.000 claims description 40
- 238000007789 sealing Methods 0.000 claims description 23
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 230000001629 suppression Effects 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 description 19
- 238000005530 etching Methods 0.000 description 17
- 239000003507 refrigerant Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000009616 inductively coupled plasma Methods 0.000 description 8
- 238000005513 bias potential Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-093947 | 2016-05-09 | ||
| JP2016093947 | 2016-05-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201806025A TW201806025A (zh) | 2018-02-16 |
| TWI648784B true TWI648784B (zh) | 2019-01-21 |
Family
ID=60267706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106114791A TWI648784B (zh) | 2016-05-09 | 2017-05-04 | 電漿處理裝置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6445191B2 (ja) |
| KR (1) | KR102073799B1 (ja) |
| CN (1) | CN107710399B (ja) |
| TW (1) | TWI648784B (ja) |
| WO (1) | WO2017195672A1 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11664262B2 (en) * | 2018-04-05 | 2023-05-30 | Lam Research Corporation | Electrostatic chucks with coolant gas zones and corresponding groove and monopolar electrostatic clamping electrode patterns |
| CN110911332B (zh) * | 2018-09-14 | 2022-11-25 | 北京北方华创微电子装备有限公司 | 静电卡盘 |
| CN110228283B (zh) * | 2019-07-18 | 2020-10-09 | 清华大学 | 基于静电吸附的快速、选择性转印装置及其制造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013045989A (ja) * | 2011-08-26 | 2013-03-04 | Shinko Electric Ind Co Ltd | 静電チャック及び半導体・液晶製造装置 |
| TWM462941U (zh) * | 2011-12-15 | 2013-10-01 | Applied Materials Inc | 用於處理腔室之基板支座的處理套組環 |
| TW201347069A (zh) * | 2011-09-30 | 2013-11-16 | Toto Ltd | 靜電吸盤 |
| TW201535581A (zh) * | 2013-12-10 | 2015-09-16 | Tokyo Electron Ltd | 電漿處理裝置及聚焦環 |
| TW201603108A (zh) * | 2014-05-12 | 2016-01-16 | 三星電子股份有限公司 | 電漿裝置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003282692A (ja) * | 2002-03-27 | 2003-10-03 | Matsushita Electric Ind Co Ltd | 基板搬送用トレーおよびこれを用いた基板処理装置 |
| CN1983518B (zh) * | 2004-06-21 | 2011-06-08 | 东京毅力科创株式会社 | 等离子体处理装置和方法 |
| US7544251B2 (en) * | 2004-10-07 | 2009-06-09 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
| KR20080107473A (ko) * | 2004-11-04 | 2008-12-10 | 가부시키가이샤 알박 | 정전 척 장치 |
| JP4850811B2 (ja) * | 2007-11-06 | 2012-01-11 | 東京エレクトロン株式会社 | 載置台、処理装置および処理システム |
| JP2010232250A (ja) * | 2009-03-26 | 2010-10-14 | Panasonic Corp | プラズマ処理装置 |
| US20120006489A1 (en) * | 2009-03-26 | 2012-01-12 | Shogo Okita | Plasma processing apparatus and plasma processing method |
| KR101299102B1 (ko) | 2009-07-07 | 2013-08-28 | 주식회사 만도 | 쇽업소버 |
| JP2011114178A (ja) * | 2009-11-27 | 2011-06-09 | Samco Inc | プラズマ処理装置及びプラズマ処理方法 |
| JP2011171329A (ja) * | 2010-02-16 | 2011-09-01 | Panasonic Corp | プラズマ処理における基板保持用のトレイおよびプラズマ処理方法 |
| JP4906012B2 (ja) * | 2010-07-26 | 2012-03-28 | 株式会社アルバック | 静電チャック |
| CN103187348A (zh) * | 2011-12-31 | 2013-07-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 晶片固定装置、半导体设备和晶片固定方法 |
| JP6165452B2 (ja) * | 2013-02-01 | 2017-07-19 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
-
2017
- 2017-04-28 CN CN201780002185.1A patent/CN107710399B/zh active Active
- 2017-04-28 JP JP2017564654A patent/JP6445191B2/ja active Active
- 2017-04-28 WO PCT/JP2017/017005 patent/WO2017195672A1/ja active Application Filing
- 2017-04-28 KR KR1020187000533A patent/KR102073799B1/ko active IP Right Grant
- 2017-05-04 TW TW106114791A patent/TWI648784B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013045989A (ja) * | 2011-08-26 | 2013-03-04 | Shinko Electric Ind Co Ltd | 静電チャック及び半導体・液晶製造装置 |
| TW201347069A (zh) * | 2011-09-30 | 2013-11-16 | Toto Ltd | 靜電吸盤 |
| TWM462941U (zh) * | 2011-12-15 | 2013-10-01 | Applied Materials Inc | 用於處理腔室之基板支座的處理套組環 |
| TW201535581A (zh) * | 2013-12-10 | 2015-09-16 | Tokyo Electron Ltd | 電漿處理裝置及聚焦環 |
| TW201603108A (zh) * | 2014-05-12 | 2016-01-16 | 三星電子股份有限公司 | 電漿裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201806025A (zh) | 2018-02-16 |
| CN107710399A (zh) | 2018-02-16 |
| JP6445191B2 (ja) | 2018-12-26 |
| KR20180015252A (ko) | 2018-02-12 |
| KR102073799B1 (ko) | 2020-02-05 |
| JPWO2017195672A1 (ja) | 2018-07-26 |
| WO2017195672A1 (ja) | 2017-11-16 |
| CN107710399B (zh) | 2021-04-16 |
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