TWI646401B - 帶有簡化光學元件的極紫外線（ｅｕｖ）基板檢查系統及其製造方法 - Google Patents

帶有簡化光學元件的極紫外線（ｅｕｖ）基板檢查系統及其製造方法 Download PDF

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Publication number
TWI646401B
TWI646401B TW103144123A TW103144123A TWI646401B TW I646401 B TWI646401 B TW I646401B TW 103144123 A TW103144123 A TW 103144123A TW 103144123 A TW103144123 A TW 103144123A TW I646401 B TWI646401 B TW I646401B
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TW
Taiwan
Prior art keywords
euv
image sensor
illumination
reticle
image
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TW103144123A
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English (en)
Chinese (zh)
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TW201525620A (zh
Inventor
福德馬吉德Ａ
班卻爾克里斯多夫丹尼斯
泰伯克里斯托弗Ｇ
莫蘭約翰克利斯朵夫
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美商應用材料股份有限公司
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW103144123A 2013-12-19 2014-12-17 帶有簡化光學元件的極紫外線（ｅｕｖ）基板檢查系統及其製造方法 TWI646401B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361918639P 2013-12-19 2013-12-19
US61/918,639 2013-12-19

Publications (2)

Publication Number Publication Date
TW201525620A TW201525620A (zh) 2015-07-01
TWI646401B true TWI646401B (zh) 2019-01-01

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TW103144123A TWI646401B (zh) 2013-12-19 2014-12-17 帶有簡化光學元件的極紫外線（ｅｕｖ）基板檢查系統及其製造方法

Country Status (7)

Country Link
US (1) US9915621B2 (enExample)
JP (1) JP6522604B2 (enExample)
KR (1) KR102335198B1 (enExample)
CN (1) CN105706002B (enExample)
SG (1) SG11201602967SA (enExample)
TW (1) TWI646401B (enExample)
WO (1) WO2015095621A1 (enExample)

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WO2017016903A1 (en) * 2015-07-30 2017-02-02 Asml Netherlands B.V. Inspection apparatus, inspection method and manufacturing method
NL2017269A (en) 2015-08-12 2017-02-16 Asml Netherlands Bv Inspection apparatus, inspection method and manufacturing method
JP6004126B1 (ja) * 2016-03-02 2016-10-05 レーザーテック株式会社 検査装置、及びそのフォーカス調整方法
WO2017157645A1 (en) 2016-03-15 2017-09-21 Stichting Vu Inspection method, inspection apparatus and illumination method and apparatus
CN109313390B (zh) * 2016-04-28 2021-05-25 Asml荷兰有限公司 Hhg源、检查设备和用于执行测量的方法
EP3296723A1 (en) * 2016-09-14 2018-03-21 ASML Netherlands B.V. Illumination source for an inspection apparatus, inspection apparatus and inspection method
US10345695B2 (en) * 2016-11-30 2019-07-09 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet alignment marks
JP6739060B2 (ja) * 2017-01-24 2020-08-12 パナソニックＩｐマネジメント株式会社 画像生成装置及び画像生成方法
KR102320292B1 (ko) * 2017-04-27 2021-11-03 한양대학교 산학협력단 위상 변위 마스크의 양불 검사 방법, 및 이를 위한 양불 검사 장치
DE102017211443A1 (de) * 2017-07-05 2019-01-10 Carl Zeiss Smt Gmbh Metrologiesystem mit einer EUV-Optik
DE102017216679A1 (de) * 2017-09-20 2019-03-21 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
EP3518041A1 (en) * 2018-01-30 2019-07-31 ASML Netherlands B.V. Inspection apparatus and inspection method
NL2022961A (en) * 2018-04-26 2019-10-31 Asml Netherlands Bv System for testing a mirror such as a collector mirror and method of testing a mirror such as a collector mirror
US10890527B2 (en) * 2018-06-28 2021-01-12 Samsung Electronics Co., Ltd. EUV mask inspection apparatus and method, and EUV mask manufacturing method including EUV mask inspection method
KR102632561B1 (ko) * 2018-06-28 2024-02-05 삼성전자주식회사 Euv 마스크 검사 장치와 방법, 및 그 방법을 포함한 euv 마스크 제조방법
KR102798792B1 (ko) 2019-12-02 2025-04-22 삼성전자주식회사 Cdi 기반 검사 장치 및 방법
US10996165B1 (en) * 2020-03-19 2021-05-04 The Boeing Company Apparatus and method for measuring UV coating effectiveness

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Also Published As

Publication number Publication date
US9915621B2 (en) 2018-03-13
KR102335198B1 (ko) 2021-12-02
CN105706002B (zh) 2018-03-09
JP6522604B2 (ja) 2019-05-29
WO2015095621A1 (en) 2015-06-25
TW201525620A (zh) 2015-07-01
SG11201602967SA (en) 2016-07-28
CN105706002A (zh) 2016-06-22
JP2017504001A (ja) 2017-02-02
KR20160098173A (ko) 2016-08-18
US20160282280A1 (en) 2016-09-29

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