SG11201602967SA - Extreme ultraviolet (euv) substrate inspection system with simplified optics and method of manufacturing thereof - Google Patents
Extreme ultraviolet (euv) substrate inspection system with simplified optics and method of manufacturing thereofInfo
- Publication number
- SG11201602967SA SG11201602967SA SG11201602967SA SG11201602967SA SG11201602967SA SG 11201602967S A SG11201602967S A SG 11201602967SA SG 11201602967S A SG11201602967S A SG 11201602967SA SG 11201602967S A SG11201602967S A SG 11201602967SA SG 11201602967S A SG11201602967S A SG 11201602967SA
- Authority
- SG
- Singapore
- Prior art keywords
- euv
- manufacturing
- inspection system
- extreme ultraviolet
- substrate inspection
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361918639P | 2013-12-19 | 2013-12-19 | |
| PCT/US2014/071321 WO2015095621A1 (en) | 2013-12-19 | 2014-12-18 | Extreme ultraviolet (euv) substrate inspection system with simplified optics and method of manufacturing thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201602967SA true SG11201602967SA (en) | 2016-07-28 |
Family
ID=53403719
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201602967SA SG11201602967SA (en) | 2013-12-19 | 2014-12-18 | Extreme ultraviolet (euv) substrate inspection system with simplified optics and method of manufacturing thereof |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9915621B2 (enExample) |
| JP (1) | JP6522604B2 (enExample) |
| KR (1) | KR102335198B1 (enExample) |
| CN (1) | CN105706002B (enExample) |
| SG (1) | SG11201602967SA (enExample) |
| TW (1) | TWI646401B (enExample) |
| WO (1) | WO2015095621A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017016903A1 (en) * | 2015-07-30 | 2017-02-02 | Asml Netherlands B.V. | Inspection apparatus, inspection method and manufacturing method |
| NL2017269A (en) | 2015-08-12 | 2017-02-16 | Asml Netherlands Bv | Inspection apparatus, inspection method and manufacturing method |
| JP6004126B1 (ja) * | 2016-03-02 | 2016-10-05 | レーザーテック株式会社 | 検査装置、及びそのフォーカス調整方法 |
| WO2017157645A1 (en) | 2016-03-15 | 2017-09-21 | Stichting Vu | Inspection method, inspection apparatus and illumination method and apparatus |
| CN109313390B (zh) * | 2016-04-28 | 2021-05-25 | Asml荷兰有限公司 | Hhg源、检查设备和用于执行测量的方法 |
| EP3296723A1 (en) * | 2016-09-14 | 2018-03-21 | ASML Netherlands B.V. | Illumination source for an inspection apparatus, inspection apparatus and inspection method |
| US10345695B2 (en) * | 2016-11-30 | 2019-07-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet alignment marks |
| JP6739060B2 (ja) * | 2017-01-24 | 2020-08-12 | パナソニックＩｐマネジメント株式会社 | 画像生成装置及び画像生成方法 |
| KR102320292B1 (ko) * | 2017-04-27 | 2021-11-03 | 한양대학교 산학협력단 | 위상 변위 마스크의 양불 검사 방법, 및 이를 위한 양불 검사 장치 |
| DE102017211443A1 (de) * | 2017-07-05 | 2019-01-10 | Carl Zeiss Smt Gmbh | Metrologiesystem mit einer EUV-Optik |
| DE102017216679A1 (de) * | 2017-09-20 | 2019-03-21 | Carl Zeiss Smt Gmbh | Mikrolithographische Projektionsbelichtungsanlage |
| KR102374206B1 (ko) | 2017-12-05 | 2022-03-14 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
| EP3518041A1 (en) * | 2018-01-30 | 2019-07-31 | ASML Netherlands B.V. | Inspection apparatus and inspection method |
| NL2022961A (en) * | 2018-04-26 | 2019-10-31 | Asml Netherlands Bv | System for testing a mirror such as a collector mirror and method of testing a mirror such as a collector mirror |
| US10890527B2 (en) * | 2018-06-28 | 2021-01-12 | Samsung Electronics Co., Ltd. | EUV mask inspection apparatus and method, and EUV mask manufacturing method including EUV mask inspection method |
| KR102632561B1 (ko) * | 2018-06-28 | 2024-02-05 | 삼성전자주식회사 | Euv 마스크 검사 장치와 방법, 및 그 방법을 포함한 euv 마스크 제조방법 |
| KR102798792B1 (ko) | 2019-12-02 | 2025-04-22 | 삼성전자주식회사 | Cdi 기반 검사 장치 및 방법 |
| US10996165B1 (en) * | 2020-03-19 | 2021-05-04 | The Boeing Company | Apparatus and method for measuring UV coating effectiveness |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0786469B2 (ja) * | 1990-11-26 | 1995-09-20 | 名古屋電機工業株式会社 | 実装済プリント基板自動検査装置 |
| JPH08209527A (ja) * | 1995-01-31 | 1996-08-13 | Asahi Eng Co Ltd | 線状体の異常検出装置 |
| US6555828B1 (en) * | 1998-11-17 | 2003-04-29 | The Regents Of The University Of California | Method and apparatus for inspecting reflection masks for defects |
| US6738135B1 (en) | 2002-05-20 | 2004-05-18 | James H. Underwood | System for inspecting EUV lithography masks |
| US7679041B2 (en) * | 2006-02-13 | 2010-03-16 | Ge Inspection Technologies, Lp | Electronic imaging device with photosensor arrays |
| DE102006039760A1 (de) * | 2006-08-24 | 2008-03-13 | Carl Zeiss Smt Ag | Beleuchtungssystem mit einem Detektor zur Aufnahme einer Lichtintensität |
| US7671978B2 (en) * | 2007-04-24 | 2010-03-02 | Xyratex Technology Limited | Scatterometer-interferometer and method for detecting and distinguishing characteristics of surface artifacts |
| KR101535230B1 (ko) * | 2009-06-03 | 2015-07-09 | 삼성전자주식회사 | Ｅｕｖ 마스크용 공간 영상 측정 장치 및 방법 |
| US8711346B2 (en) * | 2009-06-19 | 2014-04-29 | Kla-Tencor Corporation | Inspection systems and methods for detecting defects on extreme ultraviolet mask blanks |
| EP2443440B1 (en) * | 2009-06-19 | 2019-11-27 | KLA-Tencor Corporation | Euv high throughput inspection system for defect detection on patterned euv masks, mask blanks, and wafers |
| JP4761588B1 (ja) * | 2010-12-01 | 2011-08-31 | レーザーテック株式会社 | Ｅｕｖマスク検査装置 |
| JP6324071B2 (ja) * | 2011-01-11 | 2018-05-16 | ケーエルエー−テンカー コーポレイション | Ｅｕｖ結像のための装置およびその装置を用いた方法 |
| US9625810B2 (en) * | 2011-03-16 | 2017-04-18 | Kla-Tencor Corporation | Source multiplexing illumination for mask inspection |
| JP5846681B2 (ja) * | 2011-07-12 | 2016-01-20 | 公立大学法人兵庫県立大学 | 欠陥特性評価装置 |
| JP5758727B2 (ja) * | 2011-07-15 | 2015-08-05 | ルネサスエレクトロニクス株式会社 | マスク検査方法、およびマスク検査装置 |
| KR20130044387A (ko) * | 2011-09-06 | 2013-05-03 | 삼성전자주식회사 | Ｅｕｖ 마스크용 공간 영상 측정 장치 및 방법 |
| CN103424985A (zh) * | 2012-05-18 | 2013-12-04 | 中国科学院微电子研究所 | 极紫外光刻掩模缺陷检测系统 |
-
2014
- 2014-12-17 TW TW103144123A patent/TWI646401B/zh not_active IP Right Cessation
- 2014-12-18 JP JP2016524600A patent/JP6522604B2/ja active Active
- 2014-12-18 SG SG11201602967SA patent/SG11201602967SA/en unknown
- 2014-12-18 KR KR1020167011323A patent/KR102335198B1/ko not_active Expired - Fee Related
- 2014-12-18 US US15/031,690 patent/US9915621B2/en active Active
- 2014-12-18 CN CN201480058806.4A patent/CN105706002B/zh not_active Expired - Fee Related
- 2014-12-18 WO PCT/US2014/071321 patent/WO2015095621A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US9915621B2 (en) | 2018-03-13 |
| KR102335198B1 (ko) | 2021-12-02 |
| CN105706002B (zh) | 2018-03-09 |
| JP6522604B2 (ja) | 2019-05-29 |
| WO2015095621A1 (en) | 2015-06-25 |
| TW201525620A (zh) | 2015-07-01 |
| CN105706002A (zh) | 2016-06-22 |
| JP2017504001A (ja) | 2017-02-02 |
| TWI646401B (zh) | 2019-01-01 |
| KR20160098173A (ko) | 2016-08-18 |
| US20160282280A1 (en) | 2016-09-29 |
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