TWI644168B - 遮罩基底、轉印用遮罩、轉印用遮罩之製造方法以及半導體元件之製造方法 - Google Patents

遮罩基底、轉印用遮罩、轉印用遮罩之製造方法以及半導體元件之製造方法 Download PDF

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Publication number
TWI644168B
TWI644168B TW106124697A TW106124697A TWI644168B TW I644168 B TWI644168 B TW I644168B TW 106124697 A TW106124697 A TW 106124697A TW 106124697 A TW106124697 A TW 106124697A TW I644168 B TWI644168 B TW I644168B
Authority
TW
Taiwan
Prior art keywords
film
mask
etching
pattern
light
Prior art date
Application number
TW106124697A
Other languages
English (en)
Chinese (zh)
Other versions
TW201738653A (zh
Inventor
Osamu Nozawa
野澤順
Ryo Ohkubo
大久保亮
Hiroaki Shishido
宍戶博明
Yasushi Okubo
大久保靖
Original Assignee
Hoya Corporation
日商Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corporation, 日商Ｈｏｙａ股份有限公司 filed Critical Hoya Corporation
Publication of TW201738653A publication Critical patent/TW201738653A/zh
Application granted granted Critical
Publication of TWI644168B publication Critical patent/TWI644168B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW106124697A 2013-09-24 2014-09-22 遮罩基底、轉印用遮罩、轉印用遮罩之製造方法以及半導體元件之製造方法 TWI644168B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013196608 2013-09-24
JP2013-196608 2013-09-24

Publications (2)

Publication Number Publication Date
TW201738653A TW201738653A (zh) 2017-11-01
TWI644168B true TWI644168B (zh) 2018-12-11

Family

ID=52742948

Family Applications (2)

Application Number Title Priority Date Filing Date
TW106124697A TWI644168B (zh) 2013-09-24 2014-09-22 遮罩基底、轉印用遮罩、轉印用遮罩之製造方法以及半導體元件之製造方法
TW103132574A TWI597563B (zh) 2013-09-24 2014-09-22 A mask base, a transfer mask, and a transfer mask

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103132574A TWI597563B (zh) 2013-09-24 2014-09-22 A mask base, a transfer mask, and a transfer mask

Country Status (5)

Country Link
US (2) US10101650B2 (enExample)
JP (3) JP5837257B2 (enExample)
KR (3) KR102067372B1 (enExample)
TW (2) TWI644168B (enExample)
WO (1) WO2015045801A1 (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
TWI933814B (zh) 2020-07-15 2026-08-01 日商Ｈｏｙａ股份有限公司 遮罩基板、轉印用遮罩之製造方法及半導體元件之製造方法

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JP5837257B2 (ja) * 2013-09-24 2015-12-24 Hoya株式会社 マスクブランク、転写用マスクおよび転写用マスクの製造方法
JP6612326B2 (ja) * 2015-03-19 2019-11-27 Ｈｏｙａ株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
JP6058757B1 (ja) * 2015-07-15 2017-01-11 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
KR101617727B1 (ko) 2015-07-24 2016-05-03 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토마스크
WO2018155047A1 (ja) 2017-02-27 2018-08-30 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
JP6642493B2 (ja) * 2017-03-10 2020-02-05 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク
JP6808566B2 (ja) * 2017-04-08 2021-01-06 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
US11048160B2 (en) 2017-06-14 2021-06-29 Hoya Corporation Mask blank, phase shift mask and method for manufacturing semiconductor device
WO2020066591A1 (ja) * 2018-09-27 2020-04-02 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
JP7033638B2 (ja) * 2020-12-09 2022-03-10 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
CN118915377B (zh) * 2024-10-11 2025-03-21 合肥晶合集成电路股份有限公司 掩膜版及其形成方法

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TW201337449A (zh) * 2011-12-21 2013-09-16 大日本印刷股份有限公司 大型相位移遮罩及大型相位移遮罩之製造方法

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TW200745736A (en) * 2006-03-10 2007-12-16 Shinetsu Chemical Co Photomask blank and photomask
JP2012003255A (ja) * 2010-05-19 2012-01-05 Hoya Corp マスクブランクの製造方法及び転写用マスクの製造方法、並びにマスクブランク及び転写用マスク
US20130177841A1 (en) * 2010-09-30 2013-07-11 Hoya Corporation Mask blank, method of manufacturing the same, and transfer mask
TW201327029A (zh) * 2011-09-07 2013-07-01 Ｈｏｙａ股份有限公司 遮罩基底、轉印用遮罩以及半導體裝置之製造方法
TW201337449A (zh) * 2011-12-21 2013-09-16 大日本印刷股份有限公司 大型相位移遮罩及大型相位移遮罩之製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI933814B (zh) 2020-07-15 2026-08-01 日商Ｈｏｙａ股份有限公司 遮罩基板、轉印用遮罩之製造方法及半導體元件之製造方法

Also Published As

Publication number Publication date
JP2017033016A (ja) 2017-02-09
TW201738653A (zh) 2017-11-01
KR102046729B1 (ko) 2019-11-19
JP2015222448A (ja) 2015-12-10
KR20180011348A (ko) 2018-01-31
JP6030203B2 (ja) 2016-11-24
US20160187769A1 (en) 2016-06-30
KR20190130058A (ko) 2019-11-20
JP6293841B2 (ja) 2018-03-14
US20190004419A1 (en) 2019-01-03
KR102067372B1 (ko) 2020-01-16
TWI597563B (zh) 2017-09-01
TW201516560A (zh) 2015-05-01
JPWO2015045801A1 (ja) 2017-03-09
WO2015045801A1 (ja) 2015-04-02
US10527931B2 (en) 2020-01-07
KR101823276B1 (ko) 2018-01-29
US10101650B2 (en) 2018-10-16
JP5837257B2 (ja) 2015-12-24
KR20160021875A (ko) 2016-02-26

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