TWI644168B - 遮罩基底、轉印用遮罩、轉印用遮罩之製造方法以及半導體元件之製造方法 - Google Patents

遮罩基底、轉印用遮罩、轉印用遮罩之製造方法以及半導體元件之製造方法 Download PDF

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Publication number
TWI644168B
TWI644168B TW106124697A TW106124697A TWI644168B TW I644168 B TWI644168 B TW I644168B TW 106124697 A TW106124697 A TW 106124697A TW 106124697 A TW106124697 A TW 106124697A TW I644168 B TWI644168 B TW I644168B
Authority
TW
Taiwan
Prior art keywords
film
mask
etching
pattern
light
Prior art date
Application number
TW106124697A
Other languages
English (en)
Chinese (zh)
Other versions
TW201738653A (zh
Inventor
Osamu Nozawa
野澤順
Ryo Ohkubo
大久保亮
Hiroaki Shishido
宍戶博明
Yasushi Okubo
大久保靖
Original Assignee
Hoya Corporation
日商Ｈｏｙａ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corporation, 日商Ｈｏｙａ股份有限公司 filed Critical Hoya Corporation
Publication of TW201738653A publication Critical patent/TW201738653A/zh
Application granted granted Critical
Publication of TWI644168B publication Critical patent/TWI644168B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H10P76/4085—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
TW106124697A 2013-09-24 2014-09-22 遮罩基底、轉印用遮罩、轉印用遮罩之製造方法以及半導體元件之製造方法 TWI644168B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013196608 2013-09-24
JP2013-196608 2013-09-24

Publications (2)

Publication Number Publication Date
TW201738653A TW201738653A (zh) 2017-11-01
TWI644168B true TWI644168B (zh) 2018-12-11

Family

ID=52742948

Family Applications (2)

Application Number Title Priority Date Filing Date
TW106124697A TWI644168B (zh) 2013-09-24 2014-09-22 遮罩基底、轉印用遮罩、轉印用遮罩之製造方法以及半導體元件之製造方法
TW103132574A TWI597563B (zh) 2013-09-24 2014-09-22 A mask base, a transfer mask, and a transfer mask

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103132574A TWI597563B (zh) 2013-09-24 2014-09-22 A mask base, a transfer mask, and a transfer mask

Country Status (5)

Country Link
US (2) US10101650B2 (enExample)
JP (3) JP5837257B2 (enExample)
KR (3) KR101823276B1 (enExample)
TW (2) TWI644168B (enExample)
WO (1) WO2015045801A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101823276B1 (ko) * 2013-09-24 2018-01-29 호야 가부시키가이샤 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
KR102522452B1 (ko) 2015-03-19 2023-04-18 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조방법 및 반도체 디바이스의 제조방법
JP6058757B1 (ja) * 2015-07-15 2017-01-11 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
KR101617727B1 (ko) * 2015-07-24 2016-05-03 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토마스크
SG11201907771TA (en) 2017-02-27 2019-09-27 Hoya Corp Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
JP6642493B2 (ja) * 2017-03-10 2020-02-05 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク
JP6808566B2 (ja) * 2017-04-08 2021-01-06 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
SG10202103395QA (en) 2017-06-14 2021-05-28 Hoya Corp Mask blank, method for producing transfer mask and method for producing semiconductor device
WO2020066591A1 (ja) * 2018-09-27 2020-04-02 Hoya株式会社 マスクブランク、転写用マスクおよび半導体デバイスの製造方法
JP7033638B2 (ja) * 2020-12-09 2022-03-10 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
CN118915377B (zh) * 2024-10-11 2025-03-21 合肥晶合集成电路股份有限公司 掩膜版及其形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200745736A (en) * 2006-03-10 2007-12-16 Shinetsu Chemical Co Photomask blank and photomask
JP2012003255A (ja) * 2010-05-19 2012-01-05 Hoya Corp マスクブランクの製造方法及び転写用マスクの製造方法、並びにマスクブランク及び転写用マスク
TW201327029A (zh) * 2011-09-07 2013-07-01 Ｈｏｙａ股份有限公司 遮罩基底、轉印用遮罩以及半導體裝置之製造方法
US20130177841A1 (en) * 2010-09-30 2013-07-11 Hoya Corporation Mask blank, method of manufacturing the same, and transfer mask
TW201337449A (zh) * 2011-12-21 2013-09-16 大日本印刷股份有限公司 大型相位移遮罩及大型相位移遮罩之製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4933753B2 (ja) 2005-07-21 2012-05-16 信越化学工業株式会社 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法
DE602006021102D1 (de) 2005-07-21 2011-05-19 Shinetsu Chemical Co Photomaskenrohling, Photomaske und deren Herstellungsverfahren
TW200717176A (en) * 2005-09-21 2007-05-01 Dainippon Printing Co Ltd Photo mask having gradation sequence and method for manufacturing the same
JP4764214B2 (ja) 2006-03-10 2011-08-31 凸版印刷株式会社 ハーフトーン型位相シフトマスク及びその製造方法
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
WO2009123170A1 (ja) 2008-03-31 2009-10-08 Hoya株式会社 フォトマスクブランク、フォトマスクおよびフォトマスクブランクの製造方法
JP5323526B2 (ja) * 2008-04-02 2013-10-23 Ｈｏｙａ株式会社 位相シフトマスクブランク及び位相シフトマスクの製造方法
TWI409580B (zh) 2008-06-27 2013-09-21 S&S Tech Co Ltd 空白光罩、光罩及其製造方法
KR100948770B1 (ko) * 2008-06-27 2010-03-24 주식회사 에스앤에스텍 블랭크 마스크, 포토마스크 및 이의 제조 방법
KR101681335B1 (ko) * 2008-09-30 2016-11-30 호야 가부시키가이샤 포토마스크 블랭크, 포토마스크 및 그 제조 방법과, 반도체 디바이스의 제조 방법
JP5231956B2 (ja) 2008-11-25 2013-07-10 アルバック成膜株式会社 ハーフトーンマスク、ハーフトーンマスクブランクス、ハーフトーンマスクの製造方法、及びハーフトーンマスクブランクスの製造方法
JP5606028B2 (ja) * 2009-09-11 2014-10-15 Ｈｏｙａ株式会社 フォトマスクブランクおよびフォトマスクの製造方法
JP2011197375A (ja) * 2010-03-19 2011-10-06 Dainippon Printing Co Ltd 反射型マスクの製造方法および該製造に用いられる反射型マスクブランク
TWI457698B (zh) 2010-11-22 2014-10-21 Shinetsu Chemical Co A mask substrate and a mask manufacturing method, and a chromium-based material film
JP5728223B2 (ja) 2010-12-27 2015-06-03 アルバック成膜株式会社 ハーフトーンマスク、ハーフトーンマスクブランクス及びハーフトーンマスクの製造方法
JP5464186B2 (ja) * 2011-09-07 2014-04-09 信越化学工業株式会社 フォトマスクブランク、フォトマスク及びその製造方法
JP6084391B2 (ja) 2011-09-28 2017-02-22 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
WO2014010408A1 (ja) * 2012-07-13 2014-01-16 Hoya株式会社 マスクブランク及び位相シフトマスクの製造方法
KR101823276B1 (ko) * 2013-09-24 2018-01-29 호야 가부시키가이샤 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200745736A (en) * 2006-03-10 2007-12-16 Shinetsu Chemical Co Photomask blank and photomask
JP2012003255A (ja) * 2010-05-19 2012-01-05 Hoya Corp マスクブランクの製造方法及び転写用マスクの製造方法、並びにマスクブランク及び転写用マスク
US20130177841A1 (en) * 2010-09-30 2013-07-11 Hoya Corporation Mask blank, method of manufacturing the same, and transfer mask
TW201327029A (zh) * 2011-09-07 2013-07-01 Ｈｏｙａ股份有限公司 遮罩基底、轉印用遮罩以及半導體裝置之製造方法
TW201337449A (zh) * 2011-12-21 2013-09-16 大日本印刷股份有限公司 大型相位移遮罩及大型相位移遮罩之製造方法

Also Published As

Publication number Publication date
TWI597563B (zh) 2017-09-01
JP6293841B2 (ja) 2018-03-14
US20190004419A1 (en) 2019-01-03
KR20160021875A (ko) 2016-02-26
JPWO2015045801A1 (ja) 2017-03-09
KR102067372B1 (ko) 2020-01-16
KR101823276B1 (ko) 2018-01-29
US10101650B2 (en) 2018-10-16
JP5837257B2 (ja) 2015-12-24
JP2017033016A (ja) 2017-02-09
US10527931B2 (en) 2020-01-07
KR102046729B1 (ko) 2019-11-19
JP6030203B2 (ja) 2016-11-24
JP2015222448A (ja) 2015-12-10
KR20190130058A (ko) 2019-11-20
KR20180011348A (ko) 2018-01-31
WO2015045801A1 (ja) 2015-04-02
US20160187769A1 (en) 2016-06-30
TW201516560A (zh) 2015-05-01
TW201738653A (zh) 2017-11-01

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