TWI639875B - 使用非晶態金屬非線性電阻器作為主動子像素裝置之平面內切換式液晶顯示器背板 - Google Patents

使用非晶態金屬非線性電阻器作為主動子像素裝置之平面內切換式液晶顯示器背板 Download PDF

Info

Publication number
TWI639875B
TWI639875B TW105123350A TW105123350A TWI639875B TW I639875 B TWI639875 B TW I639875B TW 105123350 A TW105123350 A TW 105123350A TW 105123350 A TW105123350 A TW 105123350A TW I639875 B TWI639875 B TW I639875B
Authority
TW
Taiwan
Prior art keywords
sub
liquid crystal
amorphous metal
pixel
select line
Prior art date
Application number
TW105123350A
Other languages
English (en)
Other versions
TW201714005A (zh
Inventor
Ｅ 威廉 三世 科威爾
約翰 紐頓
Original Assignee
美國俄勒岡州立大學
美商非結晶公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美國俄勒岡州立大學, 美商非結晶公司 filed Critical 美國俄勒岡州立大學
Publication of TW201714005A publication Critical patent/TW201714005A/zh
Application granted granted Critical
Publication of TWI639875B publication Critical patent/TWI639875B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
    • G02F1/134354—Subdivided pixels, e.g. for grey scale or redundancy the sub-pixels being capacitively coupled
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G09G3/3659—Control of matrices with row and column drivers using an active matrix the addressing of the pixel involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependant on signal of two data electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13625—Patterning using multi-mask exposure
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3614—Control of polarity reversal in general

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Liquid Crystal (AREA)
  • Power Engineering (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本發明提供一種使用非晶態金屬非線性電阻器作為用於一平面內切換式液晶顯示器子像素之主動裝置之一電路之實體佈局。可同時沈積並圖案化兩個非晶態金屬非線性電阻器之下部互連件及儲存電容器之下部電極。由該資料信號互連件與該儲存電容器下部電極之重疊定義該儲存電容器之區域，該區域容易透過該下部電極之大小及/或該資料信號互連件之其與該下部電極重疊且不劣化該像素之孔徑比之大小修改。描述子像素電路之兩項實施例。採用一選擇線橋接器之一者實現影像資料之全點反轉的使用。第二實施例僅允許該影像資料之列反轉。

Description

使用非晶態金屬非線性電阻器作為主動子像素裝置之平面內切換式液晶顯示器背板
在本發明之態樣之一者中，本發明大體上係關於具有用於調變一液晶材料平行於像素內之基板之極化之一像素矩陣之一液晶顯示器背板之實現。本發明之主動裝置可包含允許控制各像素中之液晶極化，及因此像素亮度之非晶態金屬薄膜非線性電阻器。
採用一平面內切換式(IPS)子像素電路之一液晶顯示器(LCD)目前被視為最先進技術。IPS LCD與一更傳統的基於垂直對準(VA)之LCD子像素電路相比，在視角及操作速度方面具有優勢。IPS LCD與VA LCD子像素電路之間之主要區別為兩個電極(即，子像素電極)之相對位置，將一電場施加於該兩個電極之間以極化位於兩個電極之間之一液晶材料。液晶材料極化程度控制透射穿過背板之光量。對穿過背板之光透射之控制為透過其在一LCD上產生一數位影像之方法。基於IPS之子像素電路具有位於一個基板(即，背板)上之兩個電極，而基於VA之子像素電路在背板上具有一個電極且在一第二基板(即，彩色濾光器CF)上具有一個電極。目前IPS LCD技術採用位於背板上之一薄膜電晶體(TFT)，以控制施加於子像素電極之間之電場之量值，其 繼而控制IPS LCD上之數位影像。
LCD背板(其係主動裝置、導電層及絕緣層製造於其上之一玻璃基板)透過精確地極化位於背板與另一玻璃層之間之一液晶材料而控制一液晶顯示器上之一影像。在特定實施例中被稱作彩色濾光玻璃(CF)之第二玻璃層為用於產生彩色影像之彩色濾光器(每個子像素一個)之位置。目前，較佳背板主動裝置為薄膜電晶體(TFT)，其為包括循序沈積並圖案化之薄膜層之一基於半導體之裝置。TFT中所用之薄膜半導體材料具有許多限制，包含低載子遷移率、光及溫度敏感性及製造複雜性，其產生效能及製造成本問題。因此，克服此等限制之新裝置(諸如本文中所揭示之裝置)表示最先進技術之一進步。
可特別期望在本發明之電路中使用非晶態金屬非線性電阻器(AMNR)，此係因為AMNR不採用半導體材料且因此，基於AMNR之一LCD背板可克服與基於TFT之LCD背板關聯之效能及成本問題。(AMNR進一步描述於公開的PCT申請案WO 2014074360及美國專利9,099,230中，其等之完整內容以引用的方式併入本文中)。一基於AMNR之LCD背板可因此提供技術之一重要進步。例如，在LCD背板基板之平面中調變液晶材料之極化(平面內切換式(IPS))之像素電極之使用已在圖像品質方面提升LCD之效能。將AMNR用作一IPS LCD背板中之主動裝置可提供用簡單材料及程序製造之高效能LCD，藉此減小製造成本。
因此，在本發明之態樣之一者中，本發明係關於用於在一液晶顯示器背板中平面內切換之一子像素電路(其中該電路可包含AMNR)以及用於製作此電路之方法。特定言之，可圖案化一非晶態金屬薄膜以在一單一層中為兩個或兩個以上AMNR之各者及一儲存電容器之一下部電極提供電互連件。
在一額外態樣中，本發明可提供一種製造一子像素電路之方法，該子像素電路採用兩個AMNR及具有與AMNR非晶態金屬互連件同時沈積之一AMTF下部電極之一儲存電容器。子像素電路可安置於支撐用於實體實現電路之材料之一基板上。此外，子像素電路可允許跨安置於位於相同實體平面中之兩個電極之間之一液晶材料施加平行於一基板之一電場。透過所述之例示性製造方法，本發明可提供所述子像素電路至一可定址像素矩陣中之互連，該可定址像素矩陣可被獨立控制以在一LCD上產生一影像。本文中所述之例示性製程可提供一種能夠以相對於基於半導體之TFT背板製造成本之減小的製造成本製作基於IPS之LCD之LCD背板製造之方法。製造成本的減小可起因於較少的程序步驟、較簡單的程序步驟及半導體內容物的免除。
2‧‧‧電極
3‧‧‧電極
5‧‧‧非晶態金屬非線性電阻器
6‧‧‧液晶電容器
7‧‧‧儲存電容器
8‧‧‧子像素電路
10‧‧‧儲存電容器下部電極
11‧‧‧下部互連件
12‧‧‧下部互連件
13‧‧‧選擇互連節點
14‧‧‧儲存電容器接觸件
15‧‧‧選擇互連節點接觸件
16‧‧‧選擇線橋接接觸件/接觸孔
17‧‧‧液晶電容器
17a‧‧‧電極
17b‧‧‧電極
18‧‧‧資料信號互連件
19‧‧‧選擇線橋接器
20‧‧‧儲存電容器
32‧‧‧穿隧障壁
34‧‧‧絕緣介電層
36‧‧‧結晶金屬層/金屬堆疊層
37‧‧‧銦錫氧化物層
510‧‧‧儲存電容器下部電極
511‧‧‧下部互連件
512‧‧‧下部互連件
513‧‧‧選擇互連節點
514‧‧‧儲存電容器接觸件
515‧‧‧選擇互連節點接觸件
517‧‧‧液晶電容器
517a‧‧‧電極
517b‧‧‧電極
518‧‧‧資料信號互連件
520‧‧‧儲存電容器
532‧‧‧穿隧障壁層
534‧‧‧絕緣介電層
536‧‧‧金屬堆疊之後續層/結晶金屬薄膜
537‧‧‧銦錫氧化物層
A‧‧‧節點
B‧‧‧節點
Di、Di+1、Di+2‧‧‧資料信號行
S1、S1i、S1i+1、S1i+2‧‧‧選擇線
S2、S2i、S2i+1、S2i+2‧‧‧選擇線
S15‧‧‧選擇線
S25‧‧‧選擇線
當結合隨附圖式閱讀時，可進一步理解本發明之例示性實施例之前文概述及下列詳細描述，其中：圖1示意性展示一平面內切換式液晶顯示器子像素電路之一集總元件模型；圖2A至圖2D示意性展示用於形成對應於圖1之模型之一實體裝置之一例示性程序，其中該裝置包含具有兩個非晶態金屬非線性電阻器及形成有同時沈積並圖案化之一AMTF第一層之一儲存電容器之一雙重選擇平面內切換式LCD子像素電路；圖3A至圖3C示意性展示圖2D之裝置之截面圖，其中圖3B展示跨路徑A-B-C之截面且圖3C展示跨路徑3C-3C之截面；圖4A至圖4B示意性展示可透過其連接個別子像素以形成可運用列及行反轉獨立定址之一子像素矩陣之方法；圖5A至圖5D示意性展示用於在不運用行反轉的情況下形成一雙重選擇IPS LCD子像素電路之一例示性程序，該雙重選擇IPS LCD子 像素電路具有兩個AMNR及形成有同時沈積並圖案化之AMTF第一層之一儲存電容器，其中例示性程序使用四個光微影圖案化遮罩；圖6A至圖6B示意性展示未實現行反轉之一基於AMNR之IPS LCD子像素電路之一例示性實施方案，及穿透路徑A-B-C之一截面，其中一儲存電容器形成於一資料信號互連件之間，該儲存電容器具有一非晶態金屬下部電極；及圖7A至圖7B示意性展示可透過其連接個別子像素以形成可運用列反轉而不運用行反轉獨立定址之一子像素矩陣之方法。
現參考圖，其中通篇相同元件被相同地編號，展示根據本發明之例示性裝置及方法，其可在一液晶顯示器背板中提供平面內切換。此等裝置及方法通常可包含可被描述為具有對稱電流-電壓(IV)特性之一兩端子裝置之非晶態金屬非線性電阻器(AMNR)。例如，圖1示意性繪示一子像素電路8之一非限制性例示性集總元件圖，其中兩個AMNR 5可用於透過將一電場施加至一電容器6而精確地極化一液晶材料LC。虛線8內之區域標示一子像素之實體元件。電容器6可包含電連接至節點A及B之電極2、3，其中包括液晶材料LC之一介電質安置於電極2、3之間。電極2、3可包括安置於一背板基板上之相同實體平面中之銦錫氧化物(ITO)，且節點A及B可為受子像素電路8控制之子像素之資料及選擇節點。一儲存電容器7可並聯地電連接至液晶電容器6以為子像素電路8之操作提供優勢。儲存電容器緩衝位於液晶電容器6上之電壓，藉此減小針對液晶電容器6存在的電壓相依電容及洩漏效應。
液晶材料係長分子，其回應於跨液晶材料所施加之一電場而改變定向，即透過施加一電場而極化液晶材料。極化因此係其中液晶分子被實體移動或更精確地說被旋轉之一物理程序。一液晶材料當在相 同方向上多次重複地旋轉時，在相同方向上經歷較小旋轉阻力。較小旋轉阻力在相同經施加之電場量值下，改變一液晶材料之極化量值，其係一非所要的效應。為避免一極化量值改變，可規律地改變或更確切地說反轉施加至一液晶材料之一電場之極性。所述發明之特定非限制性實施例允許依陣列中之列及行反轉施加至IPS LCD子像素之一陣列之電場。熟習此項技術者將一陣列之循序列之反轉以及陣列中之循序行之反轉稱作點反轉。在被熟習此項技術者稱作列反轉的所述發明之另一非限制性實施例中，反轉IPS LCD子像素之一陣列中之循序列而不反轉循序行。
圖2A至圖3C示意性繪示用於製造對應於圖1中所示之電路模型之一平面內切換式(IPS)LCD子像素電路之一非限制性例示性程序。(圖2A至圖2D之虛線框內之區域對應於圖1中之經描畫輪廓之區域)。呈現於圖2A至圖3C中之例示性程序序列可採用四個材料層之圖案化，其與採用五個圖案化步驟之高清晰度及超高清晰度IPS LCD電視之大量製造的目前最先進技術相比有利。此外，例示性程序允許相對於相鄰子像素之極性使用點反轉。
首先，具有小於50nm之厚度之一非晶態金屬薄膜(AMTF)可同時沈積並圖案化至儲存電容器7之一下部電極10中且圖案化至兩個AMNR下部互連件11、12中。下部互連件11、12可提供用於定址一像素矩陣內之像素之第一列選擇線及第二列選擇線。AMTF層在沈積時可能超光滑，具有小於0.5nm之一RMS粗糙度。AMTF電極10及互連件11、12之超光滑(即，<0.5nm RMS)表面形態可提供跨包括下部電極10之儲存電容器7及/或包括下部互連件11、12之AMNR 5精確地施加一電場之能力。在圖案化AMTF以提供電極10及互連件11、12之後，可將包括(但不限於)金屬氧化物、金屬氮化物、半導體氧化物或半導體氮化物之一未經圖案化之介電層沈積至電極10及互連件11、12 上以提供圖3B之一穿隧障壁32。
隨後可將包括(但不限於)結晶金屬之一薄膜或結晶金屬之兩個或兩個以上薄膜之一堆疊之一層沈積至穿隧障壁32上。可接著圖案化經沈積之結晶金屬薄膜或結晶金屬薄膜之堆疊以形成圖2B、圖3B之選擇線互連件S1、S2及選擇線S1、S2之間之選擇互連節點13(其對應於圖1中之節點A)。
可將包括(但不限於)金屬氧化物、金屬氮化物、半導體氧化物或半導體氮化物之一絕緣介電層34沈積至經圖案化選擇線S1、S2及互連節點13上。絕緣層34可作用為儲存電容器7之第二介電層，作用為AMNR 5之一鈍化層，且作用為位於選擇線S1、S2上方及隨後沈積之金屬層下方之一層間介電質(ILD)。可隨後圖案化介電層34中之一孔以提供圖2C之一儲存電容器接觸件14、一選擇互連節點接觸件15及選擇線橋接接觸件16。
最後，可將一頂層金屬堆疊沈積至介電層34上。堆疊之一第一層37可包含一透明導電氧化物，例如銦錫氧化物(ITO)層37。ITO層37可形成對應於圖1中所繪示之液晶電容器6之一IPS液晶電容器17之電極17a、17b。金屬堆疊之隨後層36可循序沈積至ITO層37上且可包括結晶金屬之一薄膜或結晶金屬之兩個或兩個以上薄膜之一堆疊。結晶金屬薄膜或結晶金屬之兩個或兩個以上薄膜之堆疊，連同ITO層37可提供一資料信號互連件18及選擇線橋接器19，透過其等可實現行反轉。由於AMNR 5之下部互連件11、12可提供第一列選擇線及第二列選擇線，故藉由AMNR 5之列選擇及藉由選擇線橋接器19之行反轉之組合可一起實現一IPS LCD中之點反轉。可透過直接將資料信號互連件18循序沈積至ITO液晶電容器層37上而製作資料信號互連件18與ITO液晶電容器17之間之接觸件。因此，將圖2A至圖3C中之結構與圖1中之結構關聯，可將圖1之儲存電容器7看成藉由組合下部電極10、 穿隧障壁32、絕緣層34及資料信號互連件18以提供圖3C之儲存電容器20而實現。相似地，可將圖1之一個AMNR 5看成藉由組合互連件12、穿隧障壁32、選擇線S1及選擇互連節點13而實現，且可將圖1之另一AMNR 5看成藉由組合互連件11、穿隧障壁32、選擇線S2及選擇互連節點13而實現。
在本發明之一特定實施例中，用以圖案化頂層金屬堆疊之一程序序列可使用(但不限於)一多階調曝露程序。此程序允許透過一個光微影遮罩形成IPS液晶電容器17、資料信號互連件18及選擇線橋接器19。
在所述發明之另一實施例中，可設計用於蝕刻ITO層37及隨後沈積之結晶金屬層36之化學物以僅蝕刻ITO或結晶金屬層。因此可將所述之蝕刻化學物定義成對其等蝕刻之層有選擇性。選擇性蝕刻化學物之使用可提高多階調光微影圖案化技術之有效性且亦可允許兩個單獨遮罩層之使用。
圖3A至圖3C示意性繪示圖2D之裝置之截面圖。沿路徑A-B-C之截面圖展示AMNR 5上方之選擇線橋接器19之路徑，其包括選擇線S2及選擇互連節點13。由於ITO比結晶金屬更具電阻性，故使結晶金屬或結晶金屬堆疊36併入選擇線橋接器19中以保持低的選擇線電阻可能係重要的。ILD(介電層34)中之兩個接觸孔16提供透過其可將選擇線橋接器19連接至選擇線S1之方法。穿透點3C-3C之截面圖繪示透過其可將液晶電容器17之ITO電極17b之一者連接至儲存電容器20之方法。可使ITO/儲存電容器接觸件14圖案化穿過ILD 34及穿隧障壁32兩者，允許液晶電容器電極17b之ITO與儲存電容器下部電極10之間之接觸。
由儲存電容器AMTF下部電極10與資料信號互連件18之間之重疊定義儲存電容器區域。因此，可容易地由AMTF下部電極10之尺寸及/ 或資料信號互連件18之其與AMTF下部電極10重疊之尺寸調變儲存電容器區域。此外，當儲存電容器20位於資料信號互連件18下方時，該儲存電容器20將不會顯著地減小透射穿過IPS LCD子像素之光量。透射穿過一IPS LCD子像素之光之百分比為子像素設計之一重要考量。因此，在一基於AMNR之IPS LCD子像素內產生一儲存電容器20之本發明中所述之製造序列提供對光透射之一重要促成。
如本文中所述，使用AMNR之IPS LCD子像素可連接至圖4A至圖4B中所示之一陣列中；圖4A之虛線之區域對應於圖2D中之虛線之區域，且圖4B之虛線之區域對應於圖1中之虛線之區域。選擇線之循序對(例如，S1i及S2i，接著S1i+1及S2i+1)之極性可在正極性與負極性之間交替，引起列反轉。透過選擇線橋接器19之使用，循序資料信號行Di、Di+1可具有跨子像素之列的交替極性，引起行反轉。列反轉及行反轉之組合導致點反轉。施加至液晶電容器17之資料信號之極性展示為圖4B中之+及-，從而提供點反轉之一示意性表示。藉由本文中所述之發明，使用四個圖案化步驟，使用基於AMNR之子像素容易地達成點反轉(IPS LCD電視中之一當前最佳實踐)。
在所述發明之特定實施例中，無行反轉之列反轉(即，非點反轉)為一IPS LCD提供足夠的影像品質。圖5A至圖5D示意性繪示用於在無行反轉之情況下產生一基於AMNR之IPS LCD子像素之製程步驟之一例示性、非限制性序列。圖5A至圖5D之虛線之區域對應於圖1中之虛線之區域。
首先將具有小於50nm之厚度之一非晶態金屬薄膜(AMTF)沈積並圖案化至一儲存電容器下部電極510及兩個AMNR下部互連件511、512(一個用於選擇線S25且一個用於選擇線S15)中。在無需行反轉的情況下，在所述發明之特定實施例中，可將選擇線S15及選擇線S25定位於IPS LCD子像素之相對側上，且因此無需一選擇線橋接器。選擇 線橋接器之移除將子像素中之接觸孔之數目從4個接觸件減少至3個接觸件，其可能係有利的。在AMTF之所述圖案化之後，可將包括(但不限於)金屬氧化物、金屬氮化物、半導體氧化物或半導體氮化物之一未經圖案化介電層循序沈積至經圖案化AMTF互連件511、512及儲存電容器下部電極510上以在其等上方提供圖6B之一穿隧障壁532。
隨後可將包括(但不限於)結晶金屬之一薄膜或結晶金屬之兩個或兩個以上薄膜之一堆疊之一層沈積至穿隧障壁532上。可接著圖案化經沈積之結晶金屬薄膜或結晶金屬薄膜之堆疊之層以形成選擇線互連件S15及S25，及選擇線之間對應於圖1中之節點A之選擇互連節點513。在一子像素中可能存在不提供點反轉之兩個選擇互連節點。
可將包括(但不限於)金屬氧化物、金屬氮化物、半導體氧化物或半導體氮化物之一絕緣介電層534循序沈積至圖6B之經圖案化互連線S15、S25及互連節點513上。絕緣層534可用作為儲存電容器520之第二介電層，用作為AMNR互連件511、512之一鈍化層且用作為位於選擇線S15及S25上方及隨後沈積之金屬層下方之一層間介電質(ILD)。可隨後將ILD中之孔圖案化為一儲存電容器接觸件514及選擇互連節點接觸件515。
之後，可將一頂層金屬堆疊沈積至ILD上。堆疊之第一層537可為一透明導電氧化物，即銦錫氧化物(ITO)。ITO層537可提供對應於圖1中所繪示之液晶電容器6之一IPS液晶電容器517之電極517a、517b。金屬堆疊之隨後層536可循序沈積至ITO層537上且可包括結晶金屬之一薄膜或結晶金屬之兩個或兩個以上薄膜之一堆疊。結晶金屬薄膜536或結晶金屬之兩個或兩個以上薄膜之堆疊連同ITO層537可提供一資料信號互連件518。可透過直接將資料信號互連層536循序沈積至ITO液晶電容器層537上而製作資料信號互連件518與ITO液晶電容器517之間之接觸件。
在本發明之一特定實施例中，用以圖案化頂層金屬堆疊之一程序序列可使用(但不限於)一多階調曝露程序。此程序允許透過一光微影遮罩形成IPS液晶電容器517及資料信號互連件518。
在所述發明之另一實施例中，可設計用於蝕刻ITO層537及隨後沈積之結晶金屬層之化學物以僅蝕刻ITO或結晶金屬層。因此可將所述之蝕刻化學物定義為對其等蝕刻之層有選擇性。選擇性蝕刻化學物之使用可提高多階調光微影圖案化技術之有效性且亦允許兩個單獨遮罩層之使用。
可由儲存電容器AMTF下部電極510與資料信號互連件518之間之重疊定義儲存電容器區域。因此，可容易地由AMTF下部電極510之尺寸及/或資料信號互連件518之其與AMTF下部電極510重疊之區域調變儲存電容器區域。此外，當儲存電容器520位於資料信號互連件518下方時，該儲存電容器520將不會顯著地減小透射穿過IPS LCD子像素之光量。透射穿過一IPS LCD子像素之光之百分比為子像素設計之一重要考量。因此，在一基於AMNR之IPS LCD子像素內產生一儲存電容器之本發明所述之製造序列提供對光透射之一重要促成。
圖6A至圖6B中所提供之佈局及截面繪示，由含有組件510、511、512之一下部AMTF層與一資料信號互連件518之間之重疊所形成之一儲存電容器520在實現點反轉之基於AMNR之IPS LCD子像素(例如，圖4A、圖4B)與圖5D之僅實現列反轉之基於AMNR之IPS LCD子像素之間類似。可透過穿過圖6B之ILD層534及穿隧障壁層532之一接觸件514製作液晶電容器517之選擇信號ITO電極517b與儲存電容器下部電極510之間之連接。
圖7A至圖7B提供實現列反轉而非點反轉之基於AMNR之IPS LCD子像素之一陣列之一示意性表示。在例示性陣列中不存在選擇線橋接器，且一子像素之選擇線S1i及S2i位於子像素之相對側上。在電路圖 陣列中，將子像素之極性表示為+及-。
熟習此項技術者將從前述說明書中明白本發明之此等及其它優勢。因此，熟習此項技術者將認識到，可在不脫離本發明之廣義發明概念之情況下對上文所述之實施例作出改變或修改。因此應理解，本發明不限於本文中所述之特定實施例，而欲包含在如申請專利範圍中所陳述之本發明之範疇及精神內之所有改變及修改。

Claims (10)

  1. 一種平面內切換式液晶子像素電路，其包括：第一非晶態金屬非線性電阻器及第二非晶態金屬非線性電阻器，各者具有包括一非晶態金屬薄膜之一各自下部互連件；一儲存電容器，其具有包括一非晶態金屬薄膜之一下部電容器電極，其中該等下部互連件及該下部電容器電極安置於相同平面內。
  2. 如請求項1之子像素電路，其中該等下部互連件及該下部電容器電極之該非晶態金屬薄膜具有50nm或更小之一厚度。
  3. 如請求項1或2之子像素電路，其包括安置於該等下部互連件及該下部電容器電極上方之一介電層，且其中該儲存電容器包括安置於該下部電容器電極上方之一資料信號互連件，其中該介電層之一部分安置於其間，藉此該資料信號互連件、該下部電容器電極及該介電層之該部分協作以提供該儲存電容器。
  4. 如請求項3之子像素電路，其包括安置於該介電層上方之一平面中之兩個液晶電容器電極，其中該等液晶電容器電極及該資料信號互連件安置於該相同平面中。
  5. 如請求項4之子像素電路，其包括電連接於該等非晶態金屬非線性電阻器之間之一上部接觸件，該上部接觸件電連接至該等液晶電容器電極之一選定者。
  6. 如請求項4之子像素電路，其包括：至少一個選擇線，其包括安置於該介電層上方之一結晶金屬，該至少一個選擇線具有第一區段及第二區段，其中一間隙安置於其間，其中該等非晶態金屬非線性電阻器之一選定者之 該下部電極安置於該第一區段與該第二區段之間之該間隙中；及一選擇線橋接器，其電連接至該選擇線之該第一區段及該第二區段，該選擇線橋接器安置於該選定之非晶態金屬非線性電阻器之該下部電極上方。
  7. 如請求項6之子像素電路，其中該選擇線橋接器自該第一區段及該第二區段延伸至該等液晶電容器電極之該平面中。
  8. 一種如請求項1至7中任一項之子像素電路之陣列，其包括安置於該第一非晶態金屬非線性電阻器及該第二非晶態金屬非線性電阻器之該等下部互連件上方之一穿隧障壁層。
  9. 一種如請求項6或7之子像素電路之陣列，其經配置成一列/行矩陣且經組態以獨立地控制施加至各子像素液晶電容器之電場，該電場沿一矩陣列將該選擇線橋接器之位置自實體位於該等液晶電容器電極下方之該選擇線交替至實體位於該液晶電容器上方之該選擇線，接著回到實體位於該液晶電容器下方之該選擇線。
  10. 一種如請求項1至8中任一項之子像素電路之陣列，其經配置成經組態以獨立地控制施加至各子像素液晶電容器之電場之一列/行矩陣。
TW105123350A 2015-07-24 2016-07-22 使用非晶態金屬非線性電阻器作為主動子像素裝置之平面內切換式液晶顯示器背板 TWI639875B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562196359P 2015-07-24 2015-07-24
US62/196,359 2015-07-24

Publications (2)

Publication Number Publication Date
TW201714005A TW201714005A (zh) 2017-04-16
TWI639875B true TWI639875B (zh) 2018-11-01

Family

ID=57886869

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105123350A TWI639875B (zh) 2015-07-24 2016-07-22 使用非晶態金屬非線性電阻器作為主動子像素裝置之平面內切換式液晶顯示器背板

Country Status (6)

Country Link
US (1) US10234734B2 (zh)
JP (1) JP2018524642A (zh)
KR (1) KR102535073B1 (zh)
CN (1) CN107924094B (zh)
TW (1) TWI639875B (zh)
WO (1) WO2017019420A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10438841B2 (en) 2015-10-13 2019-10-08 Amorphyx, Inc. Amorphous metal thin film nonlinear resistor
WO2018009901A1 (en) 2016-07-07 2018-01-11 Amorphyx, Incorporated Amorphous metal hot electron transistor
JP2021520060A (ja) 2018-03-30 2021-08-12 アモルフィックス・インコーポレイテッド アモルファス金属薄膜トランジスタ
KR20210090272A (ko) * 2018-12-07 2021-07-19 아모르픽스, 인크 다이오드 기반 디스플레이 백플레인 및 전자 디스플레이를 위한 방법 및 회로
US12075656B2 (en) 2020-06-12 2024-08-27 Amorphyx, Incorporated Circuits including non-linear components for electronic devices
CN114002874A (zh) * 2020-07-28 2022-02-01 京东方科技集团股份有限公司 显示面板及显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201001036A (en) * 2008-06-20 2010-01-01 Chi Mei Optoelectronics Corp Thin film transistor array substrate and liquid crystal display
US20100123744A1 (en) * 2008-11-18 2010-05-20 Canon Kabushiki Kaisha Image display apparatus
US20110261028A1 (en) * 2010-04-22 2011-10-27 Samsung Electronics Co., Ltd. Liquid crystal display, method of driving the same, and method of manufacturing the same
TW201432735A (zh) * 2012-11-12 2014-08-16 Oregon State 非晶態金屬薄膜非線性電阻器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6243062B1 (en) * 1997-09-23 2001-06-05 Ois Optical Imaging Systems, Inc. Method and system for addressing LCD including thin film diodes
US6225968B1 (en) * 1997-09-23 2001-05-01 Ois Optical Imagaing Systems, Inc. Method and system for addressing LCD including diodes
JP4293867B2 (ja) 2003-09-05 2009-07-08 奇美電子股▲ふん▼有限公司 画素の大型化に対応したｉｐｓ液晶ディスプレイ
KR100975734B1 (ko) 2003-09-08 2010-08-12 엘지디스플레이 주식회사 횡전계방식 액정 표시 장치용 어레이 기판 및 그 제조 방법
US20050225543A1 (en) 2004-04-07 2005-10-13 Scanvue Technologies Llc Display circuit having asymmetrical nonlinear resistive elements
US20060232536A1 (en) * 2005-04-19 2006-10-19 Scanvue Technologies,L.L.C. Dual Select Diode Active Matrix Liquid Crystal Display Employing In-Plane Switching Mode
CN102053410B (zh) * 2009-10-30 2012-11-21 群康科技(深圳)有限公司 触控显示面板、触控显示装置和平面显示面板

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201001036A (en) * 2008-06-20 2010-01-01 Chi Mei Optoelectronics Corp Thin film transistor array substrate and liquid crystal display
US20100123744A1 (en) * 2008-11-18 2010-05-20 Canon Kabushiki Kaisha Image display apparatus
US20110261028A1 (en) * 2010-04-22 2011-10-27 Samsung Electronics Co., Ltd. Liquid crystal display, method of driving the same, and method of manufacturing the same
TW201432735A (zh) * 2012-11-12 2014-08-16 Oregon State 非晶態金屬薄膜非線性電阻器

Also Published As

Publication number Publication date
KR102535073B1 (ko) 2023-05-19
KR20180025988A (ko) 2018-03-09
US10234734B2 (en) 2019-03-19
TW201714005A (zh) 2017-04-16
JP2018524642A (ja) 2018-08-30
WO2017019420A8 (en) 2018-02-08
WO2017019420A1 (en) 2017-02-02
US20180203309A1 (en) 2018-07-19
CN107924094A (zh) 2018-04-17
CN107924094B (zh) 2020-10-30

Similar Documents

Publication Publication Date Title
TWI639875B (zh) 使用非晶態金屬非線性電阻器作為主動子像素裝置之平面內切換式液晶顯示器背板
US9570472B2 (en) Array substrate and manufacturing method thereof, and liquid crystal display
US9651829B2 (en) Seal pattern of liquid crystal display device having a seal insertion groove and a plurality of anti-spreading grooves
WO2016206452A1 (zh) 一种阵列基板及其制作方法、显示面板、显示装置
KR101453955B1 (ko) 박막 트랜지스터 기판 및 이를 구비하는 액정 표시 장치
KR102063983B1 (ko) 금속 산화물 반도체를 포함하는 박막 트랜지스터 기판 및 그 제조 방법
US9823512B2 (en) Liquid crystal display device
TW583493B (en) Liquid crystal display apparatus
JP6572388B2 (ja) Ｉｐｓ型ｔｆｔ−ｌｃｄアレイ基板の製造方法及びｉｐｓ型ｔｆｔ−ｌｃｄアレイ基板
TWI446542B (zh) 陣列基板及其製造方法，具有陣列基板之顯示面板，以及具有陣列基板之液晶顯示裝置
US20070170504A1 (en) Thin film transistor substrate and method of fabricating the same and liquid crystal display having the thin film transistor substrate
US20140132867A1 (en) Liquid crystal display and manufacturing method thereof
KR20080100692A (ko) 액정표시장치와 그 제조방법
JP2004348131A (ja) 液晶表示装置及びそのための薄膜トランジスタ表示板
US7599036B2 (en) In-plane switching active matrix liquid crystal display apparatus
JP2004348131A5 (zh)
KR101007206B1 (ko) 프린지 필드 스위칭 모드 액정표시장치 및 그 제조방법
KR101296621B1 (ko) 액정표시소자 및 그 제조방법
CN108020965B (zh) 液晶显示装置
US10330991B1 (en) Liquid crystal display devices with electrode stacks and methods for manufacturing such devices
JP2003315800A (ja) カラー液晶表示装置
TWI599833B (zh) 陣列基板及具有該陣列基板的液晶顯示面板
WO2018113058A1 (zh) 阵列基板、阵列基板制造方法及液晶显示屏
KR20040059687A (ko) 액정표시장치 및 그 제조 방법
KR102227857B1 (ko) 수평 전계형 액정 표시장치 및 그의 공통전극 및 화소전극 제조방법