CN107924094B - 使用非晶态金属非线性电阻器作为有源子像素器件的面内切换液晶显示器背板 - Google Patents

使用非晶态金属非线性电阻器作为有源子像素器件的面内切换液晶显示器背板 Download PDF

Info

Publication number
CN107924094B
CN107924094B CN201680042605.4A CN201680042605A CN107924094B CN 107924094 B CN107924094 B CN 107924094B CN 201680042605 A CN201680042605 A CN 201680042605A CN 107924094 B CN107924094 B CN 107924094B
Authority
CN
China
Prior art keywords
liquid crystal
sub
amorphous metal
interconnect
pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680042605.4A
Other languages
English (en)
Other versions
CN107924094A (zh
Inventor
E·威廉·科威尔三世
约翰·纽顿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oregon State University
Amorphyx Inc
Original Assignee
Oregon State University
Amorphyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oregon State University, Amorphyx Inc filed Critical Oregon State University
Publication of CN107924094A publication Critical patent/CN107924094A/zh
Application granted granted Critical
Publication of CN107924094B publication Critical patent/CN107924094B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
    • G02F1/134354—Subdivided pixels, e.g. for grey scale or redundancy the sub-pixels being capacitively coupled
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G09G3/3659—Control of matrices with row and column drivers using an active matrix the addressing of the pixel involving the control of two or more scan electrodes or two or more data electrodes, e.g. pixel voltage dependant on signal of two data electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13625—Patterning using multi-mask exposure
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3614—Control of polarity reversal in general

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Liquid Crystal (AREA)
  • Power Engineering (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

提供用于使用非晶态金属非线性电阻器作为用于面内切换液晶显示器子像素的有源器件的电路的物理布局。两个非晶态金属非线性电阻器的下部互连和存储电容器的下部电极可以被同时地沉降和图案化。存储电容器的区域可以由数据信号互连和存储电容器下部电极的重叠来定义，其通过下部电极的尺寸和/或数据信号互连的尺寸来轻易地修改，其中其与下部电极重叠并且不对像素的孔径比进行降级。描述了子像素电路的两个实施方式。使用扫描线桥的一个支持图像数据的全点反转的使用。第二个仅允许图像数据的行反转。

Description

使用非晶态金属非线性电阻器作为有源子像素器件的面内切 换液晶显示器背板
【技术领域】
在本发明的多个方面之一，本发明一般地涉及具有像素矩阵的液晶显示器背板的实现，该像素矩阵用于调制平行于像素内衬底的液晶材料的极化。本发明的有源器件可以包括非晶态金属薄膜非线性电阻器，其允许控制每个像素中的液晶极化，并且因此控制像素亮度。
【背景技术】
使用面内切换(IPS)子像素电路的液晶显示器(LCD)当前被认为是最先进的技术。相比较于更为传统的基于垂直排列(VA)的LCD子像素电路，IPS LCD具有在观看角度和运行速度方面的优势。IPS和VA LCD子像素电路之间的主要区别在于两个电极(即，子像素电极)的相对位置，在两个电极之间施加电场以对位于两个电极之间的液晶材料进行极化。对液晶材料进行极化的程度控制通过背板传输的光量。通过背板的光传输控制是在LCD上创建数字图像的手段。基于IPS的子像素电路具有位于一个衬底(即，背板)上的两个电极，而基于VA的子像素电路具有位于背板上的一个电极和位于第二衬底(即，彩色滤光片CF)上的一个电极。当前的IPS LCD技术采用位于背板上的薄膜晶体管(TFT)来控制施加于子像素电极之间的电场的幅度，进而控制IPS LCD上的数字图像。
LCD背板是玻璃衬底，在该玻璃衬底上制造有源器件、导电层和绝缘层，该LCD背板通过精确地对位于背板和另一玻璃层之间的液晶材料进行极化来控制液晶显示器上的图像。在已知为彩色滤光片玻璃(CF)的某些实施方式中，第二玻璃层是彩色滤光片的位置，每个子像素一个，以用于创建彩色图像。当前，优选的背板有源器件是薄膜晶体管(TFT)，其是基于半导体的器件，包括相继沉降和图案化的薄膜层。使用在TFT中的薄膜半导体材料具有许多限制，包括低的载流子迁移率、光和温度敏感度以及制造复杂度，这些造成性能和制造成本问题。因此，克服如这里所公开的那些限制的新的器件代表现有技术的进步。
【发明内容】
非晶态金属非线性电阻器(AMNR)可以特别地适合用于本发明的电路中，因为AMNR并不采用半导体材料，并且因此基于AMNR的LCD背板可以克服与基于TFT的LCD背板关联的性能和成本问题。(在公开的PCT申请WO 2014074360和美国专利9,099,230中进一步描述了AMNR，其整体内容通过援引并入在此)。基于AMNR的LCD背板可以因此提供该领域中的重要进步。例如，使用对LCD背板衬底、面内切换(IPS)的平面中的液晶材料的极化进行调制的像素电极就图像质量而言提升了LCD的性能。使用AMNR作为IPS LCD背板中的有源器件可以提供利用简单的材料和工艺制造的高性能LCD，由此减小制造成本。
因此，在本发明的多个方面之一中，本发明涉及用于在液晶显示器背板中的面内切换的子像素电路，其中电路可以包括AMNR以及制造该电路的多种方法。特别地，非晶态金属薄膜可以被图案化以在单个层中提供针对两个或多个AMNR中的每个与存储电容器的下部电极的电互连。
在另外的方面中，本发明可以提供制造使用两个AMNR和存储电容器的子像素电路的方法，该存储电容器具有与AMNR非晶态金属互连同时沉降的AMTF下部电极。该子像素电路可以布置在支撑用于物理地实现电路的材料的衬底上。另外，子像素电路可以允许跨布置在相同物理平面中的两个电极之间的液晶材料来施加平行于衬底的电场。通过描述的示例性的制造方法，本发明可以提供所描述的子像素电路到可寻址的像素矩阵的互连，该可寻址的像素矩阵可以被独立地控制以产生LCD上的图像。这里所述的示例性制造工艺可以提供一种LCD背板制造的手段，其能够以相对于基于半导体的TFT背板制造成本降低的制造成本制造基于IPS的LCD。制造成本的减小可以来自于更少的工艺步骤、更简单的工艺步骤以及除去半导体内容。
【附图说明】
当结合附图进行阅读时，可以进一步理解本发明的示例性实施方式的上述总结和下面的详细描述，其中：
图1示意性地示出面内切换液晶显示器子像素电路的集总元件模型；
图2A-2D示意性地示出用于形成对应于图1的模型的物理器件的示例性工艺，其中该器件包括具有两个非晶态金属非线性电阻器和存储电容器的双重扫描(dual select)面内切换LCD子像素电路，该存储电容器利用同时沉降和图案化的AMTF第一层形成；
图3A-3C示意性地示出图2D的器件的横截面视图，其中图3B示出跨通路A-B-C的横截面，并且图3C示出跨通路3C-3C的横截面；
图4A-4B示意性地示出装置，通过该装置各个子像素可以被连接以形成子像素矩阵，可以利用行和列反转来独立地寻址该子像素矩阵；
图5A-5D示意性地示出用于形成双重扫描IPS LCD子像素电路的示例性工艺，其没有列反转并且具有两个AMNR和利用同时沉降和图案化的AMTF第一层形成的存储电容器，并且示例性工艺使用四个光刻图案化掩膜；
图6A-6B示例性示出不启用列反转的基于AMNR的IPS LCD子像素电路，以及通过通路A-B-C的横截面，具有形成在数据信号互连之间的存储电容器，该存储电容器具有非晶态金属下部电极；以及
图7A-7B示意性地示出通过其各个子像素可以被连接以形成子像素矩阵的装置，该子像素矩阵可以利用行反转但没有列反转的情况下独立地寻址。
【具体实施方式】
现在参考附图，其中相似的元件通篇相似地编号，示出根据本发明的示例性器件和方法，其可以提供液晶显示器背板中的面内切换。此类的器件和方法典型地可以包括非晶态金属非线性电阻器(AMNR)，其可以被描述为两个终端器件处理对称的电流-电压(IV)特性。例如，图1示意性地示出子像素电路8的非限制性示例性集总元件图，其中两个AMNR 5可以通过对电容器6施加电场来精确地对液晶材料LC进行极化。虚线8内的区域指示子像素的物理元件。电容器6可以包括电连接到节点A和B的电极2、3，以及包括布置在电极2、3之间的液晶材料LC的电介质。电极2、3可以包含布置在背板衬底上的相同物理平面内的铟锡氧化物(ITO)，并且节点A和B可以是由子像素电路8控制的子像素的数据和扫描节点。存储电容器7可以电并联于液晶电容器6以对子像素电路8的操作提供优势。存储电容器缓冲位于液晶电容器6上的电压，由此减小液晶电容器6存在的电压依赖性电容和泄漏效应。
液晶材料是响应于跨液晶材料施加的电场而改变朝向的长分子，即，通过施加电场来对液晶材料进行极化。因此极化是液晶分子物理移动或更精确地物理旋转的物理过程。当在相同的方向上重复地旋转许多次时，液晶材料对于相同方向上的旋转经历更少的阻力。在相同施加的电场幅度下，更少的旋转阻力改变液晶材料的极化的幅度，这是不期望的效果。为了避免极化幅度改变，施加到液晶材料的电场的极性可以被有规律地改变，或更精确地，被反转。所描述发明的某些非限制性实施方式允许施加的电场通过IPS LCD子像素的阵列中的行和列二者反转至该阵列。除了阵列中的相继列的反转，阵列的相继行的反转被本领域技术人员称为点反转。在所描述的发明的另一非限制性实施方式中，由本领域技术人员所称为行反转的，在IPS LCD子像素的阵列中的相继行被反转，而相继列并不反转。
图2A-3C示意性地示出用于制造对应于图1中示出的电路模型的面内切换(IPS)LCD子像素电路的非限制性示例性工艺。(图2A-2D的虚线框内的区域对应于图1中所画出的区域)。图2A-3C中示出的示例性工艺序列可以使用四个材料层的图案化，其相比较于用于使用五个图案化步骤的高清晰和超高清晰IPS LCD电视的大量制造的当前现有技术来说受到欢迎。另外，示例性的工艺允许关于相邻子像素的极性来使用点反转。
首先，具有厚度小于50nm的非晶态金属薄膜(AMTF)可以同时沉降并且图案化到存储电容器7的下部电极10并且图案化到两个AMNR下部互连11、12。下部互连11、12可以提供用于寻址像素矩阵内的像素的第一行扫描线和第二行扫描线。AMTF层可以是超光滑的，当沉降时具有小于0.5nm的RMS厚度。AMTF电极10和互连11、12的超光滑(即，<0.5nm RMS)表面形态可以提供这样的能力，即精确地施加跨存储电容器7的电场，该存储电容器7包含下部电极10和/或包含下部互连11、12的AMNR 5。在对AMTF图案化以提供电极10和互连11、12以后，未图案化的电介质层(包含但不限于金属氧化物、金属氮化物、半导体氧化物或半导体氮化物)可以沉降在电极10和互连11、12上以提供势垒32，图3B。
随后包含但不限于晶态金属的薄膜或晶态金属的两个或多个薄膜的堆栈的层可以被沉降在势垒32上。沉降的晶态金属薄膜、或晶态金属薄膜的堆栈可以接着被图案化，以形成扫描线互连S1、S2和在扫描线S1、S2之间的扫描互连节点13(其对应于图1中的节点A)，图2B、3B。
包含但不限于金属氧化物、金属氮化物、半导体氧化物或半导体氮化物的绝缘电介质层34可以被沉降在图案化的扫描线S1、S2和互连节点13上。绝缘层34可以起到用于存储电容器7的电介质的第二层的作用、起到用于AMNR 5的钝化层的作用、以及起到位于扫描线S1、S2上并且位于随后沉降的金属层以下的层间电介质(ILD)的作用。电介质层34中的孔可以随后被图案化以提供存储电容器触点14、扫描互连节点触点15和扫描线桥触点16，图2C。
最终，顶层金属堆栈可以沉积在电介质层34上。堆栈的第一层37可以包括透明导电氧化物，例如铟锡氧化物(ITO)层37。ITO层37可以形成对应于图1中所示出的液晶电容器6的IPS液晶电容器17的电极17a、17b。金属堆栈的后续层36可以被相继地沉积在ITO层37上并且可以包含晶态金属的薄膜或晶态金属的两个或多个薄膜的堆栈。晶态金属的薄膜或晶态金属的两个或多个薄膜的堆栈结合ITO层37可以提供数据信号互连18和扫描线桥19，通过其可以影响列反转。由于AMNR 5的下部互连11、12可以提供第一行扫描线和第二行扫描线，通过AMNR 5的行扫描和通过扫描线桥19的列反转的组合一起可以实现IPS LCD中的点反转。数据信号互连18和ITO液晶电容器17之间的触点可以通过将数据信号互连18直接相继地沉降在ITO液晶电容器层37上而形成。因此，将图2A-3C中的结构与图1中的那些结构关联，图1的存储电容器7可以被视为是通过下部电极10、势垒32、绝缘层34和数据信号互连18的组合来实现，以提供图3C的存储电容器20。同样地，图1的一个AMNR 5可以被视为通过互连12、势垒32、扫描线S1和扫描互连节点13的组合来实现，并且图1的另一AMNR 5可以被视为通过互连11、势垒32、扫描线S2和扫描互连节点13的组合来实现。
在本发明的某些实施方式中，对顶层金属堆栈进行图案化的工艺序列可以使用(但不限于)多色调曝光工艺。该工艺允许通过一次光刻掩膜来形成IPS液晶电容器17、数据信号互连18和扫描线桥19。
在所描述本发明的另一实施方式中，用于刻蚀ITO层37和随后沉降晶态金属层或多个层36的化学反应可以被设计成仅对ITO或晶态金属层进行刻蚀。因此所描述的刻蚀化学反应可以被定义为对于由它们刻蚀的层是选择性的。选择性刻蚀化学反应的使用可以增强多色调光刻图案化技术的效力，并且可以允许使用两个单独的掩膜层。
图3A-3C示意性地示出图2D的器件的横截面图。沿通路A-B-C的横截面图示出包括扫描线S2和扫描互连节点13的在AMNR 5上的扫描线桥19的通路。由于ITO比晶态金属具有更强的阻抗性，将晶态金属或晶态金属堆栈36并入进扫描线桥19以保持扫描线电阻低是重要的。ILD(电介质层34)中的两个触点孔16提供通过其可以将扫描线桥19连接到扫描线S1的装置。通过点3C-3C的横截面图示出通过其液晶电容器17的ITO电极17b之一可以被连接到存储电容器20的装置。ITO/存储电容器触点14可以通过ILD 34和势垒32二者来进行图案化，以允许液晶电容器电极17b的ITO和存储电容器下部电极10之间的接触。
存储电容器区域可以由存储电容器AMTF下部电极10和数据信号互连18之间的重叠来限定。存储电容器因此可以通过AMTF下部电极10的尺寸和/或数据信号互连18的尺寸来轻易地调制，其中其与AMTF下部电极10重叠。另外，存储电容器20将不会显著减少通过IPS CLD子像素传输的光量，因为其位于数据信号互连18之下。通过IPS LCD子像素传输的光百分比是子像素设计的重要考虑。因此，本公开中描述的在基于AMNR的IPS LCD子像素内创建存储电容器20的制造序列对光传输提供重要贡献。
如这里所述，使用AMNR的IPS LCD子像素可以被连接至如图4A-4B所示的矩阵内；图4A的虚线的区域对应于图2D中的虚线的区域，并且图4B的虚线的区域对应于图1中的虚线的区域。扫描线例如S1i和S2i,并接着S1i+1和S2i+1的相继扫描线对的极性可以在正极性和负极性之间交替，形成行反转。通过使用扫描线桥19，相继的数据信号列Di、Di+1可以具有跨子像素行的交替极性，形成列反转。行反转和列反转的组合导致点反转。施加到液晶电容器17的数据信号的极性被示为图4B中的+和-，提供点反转的示意性表示。通过使用这里所述的本发明的四个图案化步骤，使用基于AMNR的子像素来轻易地实现点反转(IPS LCD电视中的当前最佳实施)。
在所描述的本发明的某些实施方式中，没有列反转的行反转(即，没有点反转)为IPS LCD提供足够的图像质量。图5A-5D示意性地示出在没有列反转情况下用于创建基于AMNR的IPS LCD子像素的制造工艺步骤的示例性、非限制性序列。图5A-5D的虚线的区域对应于图1中的虚线的区域。
首先，具有厚度小于50nm的非晶态金属薄膜(AMTF)被沉降并图案化到存储电容器下部电极510和两个AMNR下部互连511、512，一个用于扫描线S25并且一个用于扫描线S15。在不需要列反转的情况下，在所描述发明的某些实施方式中，扫描线S15和扫描线S25可以定位于IPS LCD子像素的相反侧上，并且因此不需要扫描线桥。移除扫描线桥将子像素中的接触孔从4个触点减少到3个触点，这可能是有优势的。在AMTF的所描述图案化后，未图案化的电介质层(包含但不限于金属氧化物、金属氮货物、半导体氧化物或半导体氮化物)可以被相继地沉降在图案化的AMTF互连511、512和存储电容器下部电极510上，以提供其上的势垒532，图6B。
随后，包含但不限于晶态金属的薄膜或晶态金属的两个或多个薄膜的堆栈的层可以被沉降到势垒532上。沉降的晶态金属薄膜或晶态金属薄膜的堆栈的层可以接着被图案化以形成扫描线互连S15和S25，并且扫描线之间的扫描互连节点513对应于图1中的节点A。在并不提供点反转的子像素中可以存在两个扫描互连节点。
包含但不限于金属氧化物、金属氮化物、半导体氧化物或半导体氮化物的绝缘电介质层534可以被相继地沉积在图案化的互连线S15、S25和互连节点513，图6B。绝缘层534可以起到用于存储电容器520的电介质的第二层的作用，起到用于AMNR互连511、512的钝化层的作用，以及起到位于扫描线S15、S25上并且位于随后沉降的金属层以下的层间电介质(ILD)的作用。ILD中的孔可以随后被图案化为存储电容器触点514和扫描互连节点触点515。
此后，顶层金属堆栈可以被沉降在ILD上。堆栈的第一层537可以是透明的导电氧化物，即铟锡氧化物(ITO)。ITO层537可以提供对应于图1中示出的液晶电容器6的IPS液晶电容器517的电极517a、517b。金属堆栈536的相继层可以被相继地沉降在ITO层537上，并且可以包含晶态金属的薄膜或晶态金属的两个或多个薄膜的堆栈。晶态金属的薄膜536或晶态金属的两个或多个薄膜的堆栈结合ITO层537可以提供数据信号互连518。数据信号互连518和ITO液晶电容器517之间的触点可以通过将数据信号互连层536直接相继地沉降在ITO液晶电容器层537上而形成。
在本发明的一些实施方式中，对顶层金属堆栈进行图案化的工艺序列可以使用(但不限于)多色调曝光工艺。该工艺允许通过一次光刻掩膜来形成IPS液晶电容器517以及数据信号互连518。
在所描述本发明的另一实施方式中，用于刻蚀ITO层537和随后沉降晶态金属层或多个层的化学反应可以被设计成仅对ITO或晶态金属层进行刻蚀。因此所描述的刻蚀化学反应可以被定义为对于由它们刻蚀的层是选择性的。选择性刻蚀化学反应的使用可以增强多色调光刻图案化技术的效力，并且可以允许使用两个单独的掩膜层。
存储电容器区域可以由存储电容器AMTF下部电极510和数据信号互连518之间的重叠来限定。存储电容器区域因此可以通过AMTF下部电极510的尺寸和/或数据信号互连518的尺寸来轻易地调制，其中其与AMTF下部电极510重叠。另外，存储电容器520将不会显著减少通过IPS CLD子像素传输的光量，因为其位于数据信号互连518之下。通过IPS LCD子像素传输的光百分比是子像素设计的重要考虑。因此，本公开中描述的在基于AMNR的IPSLCD子像素内创建存储电容器的制造序列对光传输提供重要贡献。
在图6A-6B中提供的布局和横截面示出由包括组件510、511、512的下部AMTF层和数据信号互连518之间的重叠所形成的存储电容器520类似于在支持点反转的基于AMNR的IPS LCD子像素(例如图4A、4B)和仅支持行反转的基于AMNR的IPS LCD子像素(图5D)之间形成的存储电容器。液晶电容器517的扫描信号ITO电极517b和存储电容器下部电极510之间的连接可以通过触点514来形成，该触点通过ILD层534和势垒层532，图6B。
图7A-7B提供支持行反转但不支持点反转的基于AMNR的IPS LCD子像素的阵列的示意表示。在该示例性阵列中并没有扫描线，并且用于子像素的扫描线S1i、S2i位于子像素的相反侧上。子像素的极性被表示为电路图阵列中的+和-。
通过上述的说明书，本发明的这些和其他优势对于本领域技术人员来说将变得明显。相应地，本领域技术人员将认识到可以在没有偏离本发明的宽创造性概念下对上述的实施方式做出改变或修改。因此应该理解的是本发明并不限于这里所述的特定实施方式，而是旨在包括在权利要求书中所陈述的本发明的范围和精神内的所有改变和修改。

Claims (10)

1.一种面内切换液晶子像素电路，包括：
第一非晶态金属非线性电阻器和第二非晶态金属非线性电阻器，每个具有相应的下部电极互连，所述下部电极互连包括非晶态金属薄膜；
存储电容器，其具有包括非晶态金属薄膜的下部电容器电极，
其中所述下部电极互连和下部电容电极被布置在相同平面内。
2.根据权利要求1所述的子像素电路，其中所述下部电极互连的所述非晶态金属薄膜和所述下部电容器电极的所述非晶态金属薄膜具有大约50nm或更小的厚度。
3.根据前述权利要求的任意一项所述的子像素电路，包括布置在所述下部电极互连和下部电容器电极上的电介质层，并且其中所述存储电容器包括布置在所述下部电容器电极上的数据信号互连，并且所述电介质层的一部分布置在其间，由此所述数据信号互连、所述下部电容器电极以及所述电介质层的所述一部分协作以提供所述存储电容器。
4.根据权利要求3所述的子像素电路，包括布置在所述电介质层上平面中的两个液晶电容器电极，其中所述液晶电容器电极和数据信号互连布置在所述相同的平面中。
5.根据权利要求4所述的子像素电路，包括上接触点，其电连接在所述非晶态金属非线性电阻器之间，所述上接触点电连接到所述液晶电容器电极的选择的一个液晶电容器电极。
6.根据权利要求4所述的子像素电路，包括：
至少一个扫描线，其包括布置在所述电介质层上的晶态金属，所述至少一个扫描线具有第一段和第二段，以及布置在二者间的间隙，而所述非晶态金属非线性电阻器中选择的一个非晶态金属非线性电阻器的所述下部电极布置在所述第一段和所述第二段之间的所述间隙中；以及
互连桥，其电连接到所述扫描线的所述第一段和所述第二段，所述互连桥布置在所述选择的非晶态金属非线性电阻器的所述下部电极上。
7.根据权利要求6所述的子像素电路，其中所述互连桥从所述第一段和第二段延伸进所述液晶电容器电极的所述平面内。
8.根据权利要求1所述的子像素电路的阵列，包括势垒层，其布置在所述第一非晶态金属非线性电阻器和所述第二非晶态金属非线性电阻器的所述下部电极互连上。
9.根据权利要求6所述的子像素电路的阵列，其布置在行/列矩阵中并且配置成独立地控制施加到每个子像素液晶电容器的电场，其沿矩阵行，将所述互连桥的位置从物理地位于所述液晶电容器电极下的扫描线交替变换至物理地位于所述液晶电容器上的所述扫描线，接着在变换回物理地位于所述液晶电容器下的所述扫描线。
10.根据权利要求1所述的子像素电路的阵列，其布置在行/列矩阵中并且配置成独立地控制施加到每个子像素液晶电容器的电场。
CN201680042605.4A 2015-07-24 2016-07-21 使用非晶态金属非线性电阻器作为有源子像素器件的面内切换液晶显示器背板 Active CN107924094B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562196359P 2015-07-24 2015-07-24
US62/196,359 2015-07-24
PCT/US2016/043230 WO2017019420A1 (en) 2015-07-24 2016-07-21 In-plane switching liquid crystal display backplane using amorphous metal non-linear resistors as active sub-pixel devices

Publications (2)

Publication Number Publication Date
CN107924094A CN107924094A (zh) 2018-04-17
CN107924094B true CN107924094B (zh) 2020-10-30

Family

ID=57886869

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680042605.4A Active CN107924094B (zh) 2015-07-24 2016-07-21 使用非晶态金属非线性电阻器作为有源子像素器件的面内切换液晶显示器背板

Country Status (6)

Country Link
US (1) US10234734B2 (zh)
JP (1) JP2018524642A (zh)
KR (1) KR102535073B1 (zh)
CN (1) CN107924094B (zh)
TW (1) TWI639875B (zh)
WO (1) WO2017019420A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102147141B1 (ko) * 2015-10-13 2020-08-25 아모르픽스, 인크 비정질 금속 박막 비선형 저항기
TWI678738B (zh) 2016-07-07 2019-12-01 美商非結晶公司 微電子裝置及其形成方法
JP2021520060A (ja) 2018-03-30 2021-08-12 アモルフィックス・インコーポレイテッド アモルファス金属薄膜トランジスタ
CN113272884A (zh) * 2018-12-07 2021-08-17 非结晶公司 用于基于二极管的显示器背板和电子显示器的方法和电路
US20230232663A1 (en) * 2020-06-12 2023-07-20 Amorphyx, Incorporated Circuits including non-linear components for electronic devices
CN114002874A (zh) * 2020-07-28 2022-02-01 京东方科技集团股份有限公司 显示面板及显示装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014074360A1 (en) * 2012-11-12 2014-05-15 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Amorphous metal thin-film non-linear resistor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6225968B1 (en) * 1997-09-23 2001-05-01 Ois Optical Imagaing Systems, Inc. Method and system for addressing LCD including diodes
US6243062B1 (en) * 1997-09-23 2001-06-05 Ois Optical Imaging Systems, Inc. Method and system for addressing LCD including thin film diodes
JP4293867B2 (ja) 2003-09-05 2009-07-08 奇美電子股▲ふん▼有限公司 画素の大型化に対応したｉｐｓ液晶ディスプレイ
KR100975734B1 (ko) 2003-09-08 2010-08-12 엘지디스플레이 주식회사 횡전계방식 액정 표시 장치용 어레이 기판 및 그 제조 방법
US20050225543A1 (en) 2004-04-07 2005-10-13 Scanvue Technologies Llc Display circuit having asymmetrical nonlinear resistive elements
US20060232536A1 (en) * 2005-04-19 2006-10-19 Scanvue Technologies,L.L.C. Dual Select Diode Active Matrix Liquid Crystal Display Employing In-Plane Switching Mode
TWI372932B (en) * 2008-06-20 2012-09-21 Chimei Innolux Corp Liquid crystal display and thin film transistor array substrate thereof
JP2010123338A (ja) 2008-11-18 2010-06-03 Canon Inc 画像表示装置
CN102053410B (zh) * 2009-10-30 2012-11-21 群康科技(深圳)有限公司 触控显示面板、触控显示装置和平面显示面板
KR101659831B1 (ko) 2010-04-22 2016-09-27 삼성디스플레이 주식회사 액정표시장치, 이를 구동하는 방법 및 이의 제조 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014074360A1 (en) * 2012-11-12 2014-05-15 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Amorphous metal thin-film non-linear resistor

Also Published As

Publication number Publication date
TWI639875B (zh) 2018-11-01
CN107924094A (zh) 2018-04-17
US10234734B2 (en) 2019-03-19
US20180203309A1 (en) 2018-07-19
KR20180025988A (ko) 2018-03-09
JP2018524642A (ja) 2018-08-30
TW201714005A (zh) 2017-04-16
KR102535073B1 (ko) 2023-05-19
WO2017019420A8 (en) 2018-02-08
WO2017019420A1 (en) 2017-02-02

Similar Documents

Publication Publication Date Title
CN107924094B (zh) 使用非晶态金属非线性电阻器作为有源子像素器件的面内切换液晶显示器背板
US8767158B2 (en) Array substrate, liquid crystal panel, liquid crystal display and driving method thereof
US8319903B2 (en) In-plane switching mode liquid crystal display having at least one common line underneath a respective common electrode to overlap the common electrode
KR101469028B1 (ko) 표시 장치
US10948789B2 (en) Display apparatus comprising a bridge portion formed of a same material as a second color filter and connecting adjacent second color filters of adjacent pixel areas
US8908114B2 (en) Liquid crystal display device
TWI451155B (zh) 液晶顯示裝置及其製造方法
KR20090015243A (ko) 박막 트랜지스터 기판 및 이를 구비하는 액정 표시 장치
JPH09113931A (ja) 液晶表示装置
WO2006064832A1 (ja) アクティブマトリクス基板、アクティブマトリクス基板の製造方法、表示装置、液晶表示装置およびテレビジョン装置
US9417493B2 (en) Array substrate, method for producing the array substrate, and display apparatus
KR101622655B1 (ko) 액정 표시 장치 및 이의 제조 방법
US20100208157A1 (en) Liquid crystal display and manufacturing method thereof
US7599036B2 (en) In-plane switching active matrix liquid crystal display apparatus
USRE46222E1 (en) Display substrate with dual transistor and connection transistor, method of manufacturing the display substrate and display device having the display substrate
KR101946927B1 (ko) 액정표시장치용 어레이기판 및 이의 제조방법
JP2004102209A (ja) 高速応答液晶表示装置とその駆動方法
KR20130114998A (ko) 액정 표시 장치 및 이의 제조 방법
KR101233729B1 (ko) 액정표시장치 및 그 제조방법
EP3316023A1 (en) Liquid crystal display device
US10181570B2 (en) Display device and manufacturing method thereof
US20060232536A1 (en) Dual Select Diode Active Matrix Liquid Crystal Display Employing In-Plane Switching Mode
KR20040059687A (ko) 액정표시장치 및 그 제조 방법
KR101748701B1 (ko) 박막 트랜지스터 및 그 제조방법
JP2004192015A (ja) 液晶表示装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant