TWI639362B - 電漿處理系統內之離子能量分布控制 - Google Patents

電漿處理系統內之離子能量分布控制 Download PDF

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Publication number
TWI639362B
TWI639362B TW104131082A TW104131082A TWI639362B TW I639362 B TWI639362 B TW I639362B TW 104131082 A TW104131082 A TW 104131082A TW 104131082 A TW104131082 A TW 104131082A TW I639362 B TWI639362 B TW I639362B
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TW
Taiwan
Prior art keywords
electrode
substrate
plasma
processing system
plasma processing
Prior art date
Application number
TW104131082A
Other languages
English (en)
Chinese (zh)
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TW201603651A (zh
Inventor
費雪安德里斯
哈得森艾瑞克
Original Assignee
蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 蘭姆研究公司 filed Critical 蘭姆研究公司
Publication of TW201603651A publication Critical patent/TW201603651A/zh
Application granted granted Critical
Publication of TWI639362B publication Critical patent/TWI639362B/zh

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/36—Circuit arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)
TW104131082A 2008-12-19 2009-12-18 電漿處理系統內之離子能量分布控制 TWI639362B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US13948808P 2008-12-19 2008-12-19
US61/139,488 2008-12-19
US12/634,959 US9887069B2 (en) 2008-12-19 2009-12-10 Controlling ion energy distribution in plasma processing systems
US12/634,959 2009-12-10

Publications (2)

Publication Number Publication Date
TW201603651A TW201603651A (zh) 2016-01-16
TWI639362B true TWI639362B (zh) 2018-10-21

Family

ID=42264351

Family Applications (2)

Application Number Title Priority Date Filing Date
TW104131082A TWI639362B (zh) 2008-12-19 2009-12-18 電漿處理系統內之離子能量分布控制
TW098143689A TWI516174B (zh) 2008-12-19 2009-12-18 電漿處理系統內之離子能量分布控制

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW098143689A TWI516174B (zh) 2008-12-19 2009-12-18 電漿處理系統內之離子能量分布控制

Country Status (8)

Country Link
US (1) US9887069B2 (https=)
EP (1) EP2380413A4 (https=)
JP (2) JP5888981B2 (https=)
KR (2) KR101650972B1 (https=)
CN (1) CN102257886B (https=)
SG (1) SG171843A1 (https=)
TW (2) TWI639362B (https=)
WO (1) WO2010080421A2 (https=)

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Also Published As

Publication number Publication date
EP2380413A2 (en) 2011-10-26
KR101650972B1 (ko) 2016-08-24
WO2010080421A4 (en) 2010-10-07
SG171843A1 (en) 2011-07-28
KR20110112804A (ko) 2011-10-13
JP5883481B2 (ja) 2016-03-15
US9887069B2 (en) 2018-02-06
WO2010080421A3 (en) 2010-08-26
KR101679528B1 (ko) 2016-11-24
JP2012513124A (ja) 2012-06-07
KR20150103304A (ko) 2015-09-09
TW201031279A (en) 2010-08-16
EP2380413A4 (en) 2015-12-02
CN102257886B (zh) 2014-09-17
US20100154994A1 (en) 2010-06-24
JP5888981B2 (ja) 2016-03-22
TW201603651A (zh) 2016-01-16
TWI516174B (zh) 2016-01-01
CN102257886A (zh) 2011-11-23
WO2010080421A2 (en) 2010-07-15
JP2015029104A (ja) 2015-02-12

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