TWI637532B - Light-emitting diode - Google Patents
Light-emitting diode Download PDFInfo
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- TWI637532B TWI637532B TW106117124A TW106117124A TWI637532B TW I637532 B TWI637532 B TW I637532B TW 106117124 A TW106117124 A TW 106117124A TW 106117124 A TW106117124 A TW 106117124A TW I637532 B TWI637532 B TW I637532B
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- layer
- emitting diode
- light emitting
- current distribution
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- 238000009826 distribution Methods 0.000 claims abstract description 44
- 238000005253 cladding Methods 0.000 claims abstract description 37
- 230000005641 tunneling Effects 0.000 claims abstract description 25
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 12
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 4
- 239000000945 filler Substances 0.000 claims description 45
- 150000001875 compounds Chemical class 0.000 claims description 17
- 239000002019 doping agent Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052714 tellurium Inorganic materials 0.000 claims description 7
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 150000002736 metal compounds Chemical class 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- -1 GaAs compound Chemical class 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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- H01L33/0004—Devices characterised by their operation
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Abstract
一種具有堆疊式結構之發光二極體，其中該堆疊式結構包括載體層及反射層及n型摻雜下包覆層及產生電磁輻射之活性層及p型摻雜上包覆層及n型摻雜電流分佈層，並且上述層係按上述順序佈置。 該活性層包括量子井結構。在該上包覆層與該電流分佈層之間設有穿隧二極體，其中該電流分佈層佔優勢地由鎵含量大於1%之n型摻雜含鎵層構成。
Description
本發明係有關於一種發光二極體。
由DE 102 44 200 A1、DE 10 2010 032 497 A1及K. Streubel等人所著之"High Brightness AlGaInP Light-Emitting Diodes", IEEE Journal on selected Topics in Quantum Electronics, Vol. 8, No. 2 March / April 2002已知各種LED結構。
在此背景下，本發明之目的在於提供一種能改良先前技術之裝置。 本發明用以達成該目的之解決方案為一種具有請求項1之特徵的發光二極體。本發明之有益技術方案為附屬項之主題。 根據本發明之主題，提供一種具有堆疊式結構之發光二極體，其中該堆疊式結構包括載體層及反射層及n型摻雜下包覆層及產生電磁輻射之活性層及p型摻雜上包覆層及n型摻雜電流分佈層，並且上述層係按上述順序佈置。 該活性層包括量子井結構。在該上包覆層與該電流分佈層之間設有穿隧二極體，其中該電流分佈層佔優勢地由鎵含量大於1%之n型摻雜含鎵層構成。 需要指出的是，說明諸如鎵或鋁或銦等元素時所給出之百分比係有關於相關層之化合物之第三族元素的原子數比例。因此，Al0.1
Ga0.9
As係指由以下半導體材料構成之層，在該半導體材料中，50%的原子為第五族元素(砷)，50%的原子為第三族元素，其中第三族元素中又有10%為鋁原子，90%為鎵原子。此術語類似地應用於半導體材料如GaAs0.8
P0.2
之第五族元素的混合物。 可以理解的是，術語“堆疊式結構”包括堆疊佈置之半導體層。該等層較佳自N型包覆層(N-Mantelschicht)開始直至包括N型接觸層(N-Kontaktschicht)在內採用單塊設計且特定言之以MOVPE磊晶法製成。根據具體製造方法，該等採用單塊設計之層亦可被鍵合於載體層上。 可以理解的是，位於活性層上之其他層，包括穿隧二極體之層在內，被配置為儘可能可被活性層之發射波長穿透。 本結構之優點在於，能夠以簡單且低成本之方式提高發光效率，而p型區域(p-Bereich)位於活性層上方之結構的極性得以保持。p型區域位於活性區域上方之傳統LED的發光效率極低。僅藉由整合有金屬反射鏡之薄膜LED方能達到更高的光功率。然而，薄膜LED之p型區域總是位於活性層下方。在此，“活性層下方”總是指位於背離發光側一側之層，“活性層上方”係指位於面向發光側一側之層。 在此等構件中，僅透過複雜且高成本之附加鍵合程序並藉由附加的輔助載體材料，方能實現位於活性區域上方之p型區域。藉由穿隧二極體位於活性層上方且極性反轉之本結構，能夠以簡單且有益之方式達到更高的光功率，意即，與相應之p型極性(p-Polarität)相比，n型電流分佈層(n-Stromverteilschicht)中之吸收損耗更小且n型電流分佈層之橫向傳導率更高。結果出人意料：與先前技術中N型包覆層位於活性層與N型電流分佈層間之層序列相比，儘管設有穿隧二極體且活性層上之層的極性反轉，但發光效率至少是可比的，其中整體結構具有有益極性。另外，n型接觸層之接觸電阻顯著小於p型接觸層，此優點得以保留。換言之，出於成本原因，用於提高效率之反射層迄今僅應用於高功率 LED 。然而，相關領域通常知識者總試圖利用 n-up 結構 (n-up Struktur) ，即未設穿隧二極體之結構，來基於 n 型層中 之電子的較低有效質量而獲得必要的橫向傳導率。 然而，高功率 p-up LED (high Power p-up LED) 之高電流密度始終需要可被穿透且導電性極佳之穿隧二極體。出人意料的是，藉由特定言之摻碲及摻碳之砷化物層及磷化物層，能夠以簡單且低成本之方式形成此種穿隧二極體。 另一優點在於，高功率 p-up LED 能夠簡單地被以往所用之“標準” p-up LED 所替換，而不必進行全面的重新設計。
在一改良方案中，在該電流分佈層上形成有接觸層，其中該電流分佈層具有與該接觸層相同之摻雜極性。該接觸層之摻雜較佳高於該電流分佈層之摻雜。 在一實施方式中，該堆疊式結構佔優勢地包括單塊佈置之層，其中該等層中的一部分包含第三族砷化物化合物半導體及/或第三族磷化物化合物半導體。 在另一改良方案中，該活性層具有大於600 nm或大於700 nm之發射波長。 在一改良方案中，該載體層包含矽或鎵或鎳或GaAs或者由矽或鎵或鎳或GaAs構成。該載體層較佳在底面上整面具有第一連接接點。在一實施方式中，在該n型摻雜下包覆層下方形成有n型摻雜接觸層。 在另一實施方式中，該反射層包括金屬層或者由金屬層形成。在此，該金屬層在載體與下包覆層及/或n型摻雜下接觸層之間形成電接觸。在另一實施方式中，該反射層包括半導體反射鏡。 在一改良方案中，該下包覆層及該上包覆層(20)佔優勢地包含由GaAs或AlGaAs或InGaAsP或GaAsP或InGaP或AlInGaP構成之化合物。 在另一改良方案中，該量子井結構包括多量子井結構，其中該多量子井結構具有介於15 nm與350 nm間之厚度或介於30 nm與300 nm間之厚度。在一實施方式中，該活性層由0.1 ≤ x ≤ 0.2且0.1 ≤ y ≤ 0.3之Inx
Ga1-x
As/GaAs1-y
Py
多量子井結構或0 ≤ x ≤ 0.25且0.2 ≤ y ≤ 0.85之Alx
Ga1-x
As/Aly
Ga1-y
As多量子井結構構成。 在一實施方式中，該n型摻雜電流分佈層具有介於0.1 µm至5.0 µm之厚度。該電流分佈層較佳由GaAs化合物或AlGaAs化合物或InGaP化合物或InAlP化合物或AlInGaP化合物構成。特定言之，該電流分佈層包括鋁含量x介於0%與20%間之n型摻雜Alx
Ga1-x
As層。在一改良方案中，該電流分佈層具有大於1.0E18 N/cm3
之n型摻雜劑濃度。研究結果表明，以下是有益的：該電流分佈層具有小於70 Ω/■之薄片電阻Rs，且該包覆層具有大於400 Ω/■之薄片電阻Rs。 在一改良方案中，該穿隧二極體包括含砷層，其中該含砷層摻碳，且/或包括含磷層。該穿隧二極體之含磷層較佳摻碲。該穿隧二極體較佳包括摻雜劑濃度大於3x1018
N/cm3
之n型摻雜層及摻雜劑濃度大於1x1019
N/cm3
之p型摻雜層。 在一實施方式中，該電流分佈層具有空穴，其中該空穴包括頂端邊緣面及側面及底部表面，且其中該底部表面上之該電流分佈層被完全移除，並且該底部表面被不同於該第一半導體材料之填料覆蓋，並且該填料與該底部表面間之接觸電阻大於該填料與該電流分佈層之間的接觸電阻。該空穴中大部分或較佳全部填充該填料。該填料構成正面接點的一部分且至少在頂面上具有金屬導電性。 在另一實施方式中，該邊緣區及/或該側面至少部分地或完全被該填料覆蓋。該空穴中較佳全部填充該填料。該填料較佳包含金及/或鎳及/或鈀及/或鉑及/或銀。 在一改良方案中，該填料包含金屬化合物，其中該金屬化合物在該底部表面上所形成之接觸電阻至少十倍於與該側面及/或與該邊緣面之間的接觸電阻。 在另一改良方案中，在該填料與包圍該填料之該等層間的界面上形成有化合物或合金或半導體中間層。 研究結果表明，以下是有益的：該填料包含用於對該等界面及周圍層實施摻雜之摻雜劑。在此，該摻雜劑自填料擴散到鄰接層中。該填料較佳具有極性與該電流分佈層之摻雜劑相同的摻雜劑。 在一實施方式中，該填料及/或該電流分佈層及該接觸層具有包含元素矽、鍺及碲中之一者或數者的摻雜。在另一實施方式中，在該底部區域形成有蕭特基接觸。 在一改良方案中，該空穴不貫穿該穿隧二極體層結構或者部分或完全貫穿該穿隧二極體層結構。較佳地，該空穴之該底部表面的至少一部分形成於該上包覆層區域。 在另一改良方案中，該空穴呈圓形或橢圓形或角形，其中該空穴之面積至多占該活性層之面積的25%。 該空穴在電流分佈層中較佳鄰近該層之面心佈置。該空穴尤佳包括該面心，意即，該空心形成於面積中心。換言之，該空穴居中或偏心地設於該發光二極體之表面上。在一實施方式中，在該空穴內部之該填料的表面上形成有鍵合部、較佳引線鍵合部(Drahtbond)形式之第二連接接點。 在一改良方案中，自該空穴出發，數個導電指部設於該發光二極體之表面上，其中該等指部電性連接該第二連接接點。
圖1為根據本發明之發光二極體10之實施方式視圖。發光二極體10具有堆疊式結構，該堆疊式結構包括若干沿豎向堆疊佈置之層。在背面接觸層12上設有載體層14。在載體層14上設有反射層15。在反射層15上設有n型摻雜下包覆層16。反射層15較佳由金屬層構成。該金屬層在載體層14與下包覆層16或位於下包覆層16下方之n型摻雜接觸層(未示出)間形成良好的電接觸。 在下包覆層16上設有產生電磁輻射之活性層18，其中活性層18包括量子井結構。在活性層18上設有p型摻雜上包覆層20。在上包覆層20上設有穿隧二極體22。在穿隧二極體22上設有n型摻雜電流分佈層24。在n型摻雜電流分佈層24上設有n型摻雜接觸層26。電流分佈層24佔優勢地具有鎵含量超過1%之n型摻雜含鎵層。 在n型摻雜接觸層26上設有正面接點28。可以理解的是，不同於背面接觸層12，正面接點28並非整面形成。另需指出，上述層係按上述順序佈置。 圖2為圖1之實施方式之穿隧二極體詳圖。下文僅說明不同於圖1中的圖示內容之處。穿隧二極體22具有設於上包覆層20上之第一p型摻雜層22.1。該第一層之摻雜超過1 x 1019
N/cm³。該第一層較佳包含砷，其中該第一層摻碳。 在第一層22.1上設有第二n型摻雜層22.2。該第二層之摻雜超過3 x 1018
N/cm³。該第二層較佳包含磷，其中該第二層摻碲。 圖3為圖1之實施方式之活性層18的詳圖。下文僅說明不同於圖1中的圖示內容之處。針對該活性層，在第一替選方案中示出被配置為多量子井結構之第一層疊堆18.1，且在第二替選方案中示出同樣被配置為多量子井結構之第二層疊堆18.2。 第一層疊堆18.1具有第一層a1與第二層b1之序列。在此，該序列恰好重複三次。第一層a1被佈置成第一層疊堆18.1之頂層。第一層a1之厚度為20 nm且由GaAs0.8
P0.2
化合物構成。第二層b1之厚度為10 nm且由In0.15
Ga0.85
As化合物構成。 第二層疊堆18.2具有第一層a2與第二層b2之序列。在此，該序列恰好重複三次。第一層a2被佈置成第二層疊堆18.2之頂層。第一層a2之厚度為20 nm且由Al0.5
Ga0.5
As化合物構成。第二層b2之厚度為10 nm且由Al0.15
Ga0.85
As化合物構成。 圖4為用於圖1之實施方式之空穴的第一實施方式詳圖。下文僅說明不同於圖1中的圖示內容之處。 發光二極體10之堆疊式單塊結構的上部具有圓形或橢圓形或矩形空穴30，該空穴具有底部31、側面32及頂端邊緣面33。空穴30設於n型摻雜接觸層26之面積中心(未示出)，並且完全貫穿n型摻雜接觸層26、位於該接觸層下方之n型摻雜電流分佈層24及穿隧二極體22之第二層22.2，並且在圖4中位於穿隧二極體22之第一層22.1上方。可以理解的是，空穴30之底部31依蝕刻程序或結構化程序之具體用時與類型而以不同深度形成於第一層22.1中。 該空穴之面積至多占該活性層之面積的25%。否則，n型摻雜接觸層26之發光面積將變得過小。 可以理解的是，在如圖5所示之另一實施方式中，空穴30之底部31形成於上包覆層20的近旁或內部，其中空穴30之底部31依乾式蝕刻程序之具體用時與類型而以不同深度設於上包覆層20中。 用填料40填充空穴30，該填料不同於周圍各層20、22.1、22.2、24、26之半導體材料。填料40較佳包含金及/或鎳及/或鈀及/或鉑及/或銀。 空穴30中大部分或較佳全部填充填料40。填料40構成正面接點28的一部分且至少在頂面上具有金屬導電性。填料40與底部31間之接觸電阻至少十倍於填料40與電流分佈層24之間的接觸電阻。穿過底部31而垂直流向活性層18之非期望電流被抑制。 填料40與底部表面31間之接觸電阻較佳大於與連接至側面之層22.2、24、26之間的接觸電阻。 在圖中未示出之實施方式中，在底部31區域內且/或在側面32上設有隔離層。該隔離層例如可在裝入填料40之前形成。另一可能性為，半導體/包覆層自身透過摻雜劑自填料中向外擴散而形成隔離層。 填料40包含摻雜劑，以便對填料間之界面31及32實施摻雜。填料40具有元素矽、鍺及碲中之一者或數者作為摻雜劑。在圖中未示出之實施方式中，填料40在底部31區域具有蕭特基接觸。 在頂端邊緣面33上形成有指部28.1形式之金屬導體帶作為正面接點28的一部分，以便將n型摻雜接觸層26儘可能低電阻地連接至表面。所有指部28.1皆與填料40低電阻連接。在同樣未示出之實施方式中，在填料頂面上形成有引線鍵合部作為第二連接接點的一部分。 圖5為圖1之實施方式包含空穴之第二實施方式及活性層之較佳發射區的視圖。下文僅說明不同於圖4中的實施方式之處。 鑒於電流分佈層24已具有良好的導電性且與上部第二連接接點間存在低接觸電阻，n型摻雜接觸層26之形成實屬多餘。優點在於，發光二極體10之發射率提高。 空穴30之底部31形成於上包覆層20上或上包覆層20內部。在底部31區域形成有蕭特基接觸區域50，該蕭特基接觸區域能有效抑制垂直流向活性層18之電流。 載體層14被配置得極薄且具有介於100 µm與450 µm間之厚度。填料40包含PdGe化合物。 底部區域之左右兩側呈現活性層18的兩個發射區EM。在圖中未示出之視圖中，該等發射區完全環繞空穴30形成。
10‧‧‧發光二極體
12‧‧‧背面接觸層
14‧‧‧載體層
15‧‧‧反射層
16‧‧‧n型摻雜下包覆層
18‧‧‧活性層
18.1‧‧‧第一層疊堆
18.2‧‧‧第二層疊堆
20‧‧‧p型摻雜上包覆層
22‧‧‧穿隧二極體
22.1‧‧‧第一p型摻雜層
22.2‧‧‧第二n型摻雜層
24‧‧‧n型摻雜電流分佈層
26‧‧‧n型摻雜接觸層
28‧‧‧正面接點
28.1‧‧‧指部
30‧‧‧空穴
31‧‧‧底部，底部表面，界面
32‧‧‧側面，界面
33‧‧‧頂端邊緣面
40‧‧‧填料
50‧‧‧蕭特基接觸區域
a1‧‧‧第一層
a2‧‧‧第一層
b1‧‧‧第二層
b2‧‧‧第二層
EM‧‧‧發射區
下面結合圖式詳細闡述本發明。在此，同類型部件使用相同名稱。所示實施方式經高度示意性處理，意即，距離以及橫向及豎向延伸未按比例示出，且相互間亦不存在可推導出來的幾何關係，另有說明者除外。其中： 圖1為根據本發明之LED層疊堆之實施方式視圖； 圖2為圖1之實施方式之穿隧二極體詳圖； 圖3為圖1之實施方式之活性層的構造詳圖； 圖4為圖1之實施方式包含空穴之實施方式的詳圖； 圖5為圖1之實施方式包含空穴之第二實施方式及活性層之較佳發射區的完整視圖。
Claims (27)
- 一種具有堆疊式結構之發光二極體(10)，其中該堆疊式結構包括：載體層(14),n型摻雜下包覆層(16),產生電磁輻射之活性層(18)，其中該活性層(18)包括量子井結構，p型摻雜上包覆層(20),n型摻雜電流分佈層(24),其中該等層(14,15,16,18,20,24)係按上述㊣順序佈置，在該上包覆層(20)與該電流分佈層(24)之間設有穿隧二極體(22)，其中該電流分佈層(24)佔優勢地具有鎵含量大於1%之n型摻雜含鎵層，其特徵在於，在該載體層(14)與該n型摻雜包覆層(16)之間設有反射層(15)，並且在該n型摻雜下包覆層(16)下方形成有n型摻雜接觸層，並且該穿隧二極體(22)包括含砷層，其中該含砷層摻碳，且/或包括含磷層，其中該含磷層摻碲，並且該穿隧二極體(22)包括摻雜劑濃度大於3x1018N/cm3之n型摻雜層(18.2)及摻雜劑濃度大於1x1019N/cm3之p型摻雜層(18.1)。
- 如請求項1之發光二極體(10)，其特徵在於，在該電流分佈層(24)上形成有接觸層(26)，且該電流分佈層(24)具有與該接觸層(26)相同之摻雜極性，其中該接觸層(26)之n型摻雜高於該電流分佈層(24)之n型摻雜。
- 如請求項1或2之發光二極體，其特徵在於，該堆疊式結構(10)佔優勢地包括單塊佈置之層，且該等層中的一部分包含第三族砷化物化合物半導體及/或第三族磷化物化合物半導體。
- 如請求項1或2之發光二極體(10)，其特徵在於，發射波長大於600nm或大於700nm。
- 如請求項1或2之發光二極體(10)，其特徵在於，該載體層(14)包含矽或鎵或鎳或GaAs或者由矽或鎵或鎳或GaAs構成，且具有第一連接接點。
- 如請求項1或2之發光二極體(10)，其特徵在於，該反射層(15)由金屬層形成，且該金屬層在該載體(14)與該下包覆層及/或該n型摻雜接觸層之間形成電接觸。
- 如請求項1或2之發光二極體(10)，其特徵在於，該下包覆層(16)及該上包覆層(20)佔優勢地包含由GaAs或AlGaAs或InGaAsP或GaAsP或InGaP或AlInGaP構成之化合物。
- 如請求項1或2之發光二極體(10)，其特徵在於，該活性層(18)之量子井結構包括多量子井結構，該多量子井結構具有介於15nm與350nm間之厚度或介於30nm與300nm間之厚度。
- 如請求項1或2之發光二極體(10)，其特徵在於，該電流分佈層(24)具有介於0.1μm至5.0μm之厚度。
- 如請求項1或2之發光二極體(10)，其特徵在於，該電流分佈層(24)為n型摻雜且由GaAs或AlGaAs或InGaP或InAlP或AlInGaP構成。
- 如請求項1或2之發光二極體(10)，其特徵在於，該電流分佈層(24)包括鋁含量x介於0%與20%間之n型摻雜AlxGa1-xAs層。
- 如請求項1或2之發光二極體(10)，其特徵在於，該電流分佈層(24)具有大於1.0 x 1018N/cm3之n型摻雜劑濃度。
- 如請求項1或2之發光二極體(10)，其特徵在於，該電流分佈層(24)具有小於70Ω/■之薄片電阻R□，且該上包覆層(20)具有大於400Ω/■之薄片電阻R□。
- 如請求項1或2之發光二極體(10)，其特徵在於，該活性層(18)由0.1x0.2且0.1y0.3之InxGa1-xAs/GaAs1-yPy多量子井結構或0x0.25且0.2y0.85之AlxGa1-xAs/AlyGa1-yAs多量子井結構構成。
- 如請求項1或2之發光二極體(10)，其特徵在於，該電流分佈層(24)具有空穴(30)，且該空穴(30)具有頂端邊緣面(33)及側面(32)及底部表面(31)，其中該底部表面(31)上之該電流分佈層(24)被完全移除，並且該底部表面(31)被不同於該上包覆層(20)、該穿隧二極體(22)、該電流分佈層(24)及/或該接觸層(26)之包圍半導體材料之填料覆蓋，並且該填料與該底部表面間之接觸電阻大於該填料與該電流分佈層(24)之間的接觸電阻。
- 如請求項15之發光二極體(10)，其特徵在於，該邊緣區及/或該側面(32)至少部分地或完全被該填料(40)覆蓋。
- 如請求項15之發光二極體(10)，其特徵在於，該填料(40)包含金屬化合物，且該金屬化合物在該底部(31)區域所形成之接觸電阻至少十倍於與該側面(32)及/或與該邊緣面(33)之間的接觸電阻。
- 如請求項15之發光二極體(10)，其特徵在於，在該填料(40)與包圍該填料(40)之該等層間的界面(31,32)上形成有化合物或合金或半導體中間層。
- 如請求項15之發光二極體(10)，其特徵在於，該填料(40)包含金及/或鎳及/或鈀及/或鉑及/或銀。
- 如請求項15之發光二極體(10)，其特徵在於，該填料(40)包含用於對該等界面及周圍層實施摻雜之摻雜劑。
- 如請求項15之發光二極體(10)，其特徵在於，該填料(40)及/或該電流分佈層(24)及該接觸層(26)具有包含元素矽、鍺及碲中之一者或數者的摻雜。
- 如請求項15之發光二極體(10)，其特徵在於，在該底部(31)區域形成有蕭特基接觸。
- 如請求項15之發光二極體(10)，其特徵在於，該空穴(30)不貫穿該穿隧二極體層結構(22.1,22.2)或者部分或完全貫穿該穿隧二極體層結構(22.1,22.2)。
- 如請求項15之發光二極體(10)，其特徵在於，該底部表面(31)的至少一部分形成於該上包覆層(20)區域。
- 如請求項15之發光二極體(10)，其特徵在於，該空穴(30)呈圓形或橢圓形或角形，且該空穴(30)之面積至多占該活性層(18)之面積的25%。
- 如請求項15之發光二極體(10)，其特徵在於，該空穴(30)居中或偏心地設於該發光二極體(10)之表面上，並且在該空穴(30)內部之該填料的表面上形成有鍵合部形式之第二連接接點。
- 如請求項26之發光二極體(10)，其特徵在於，自該空穴(30)出發，數個導電指部(28.1,28.2)設於該發光二極體(10)之表面上，並且該等指部(28.1,28.2)電性連接該第二連接接點。
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| ??102016006295.9 | 2016-05-27 | ||
| DE102016006295.9A DE102016006295A1 (de) | 2016-05-27 | 2016-05-27 | Leuchtdiode |
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| TW201806180A TW201806180A (zh) | 2018-02-16 |
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| EP (1) | EP3249700B1 (zh) |
| KR (1) | KR101995628B1 (zh) |
| CN (1) | CN107452736B (zh) |
| DE (1) | DE102016006295A1 (zh) |
| TW (1) | TWI637532B (zh) |
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| CN106206865B (zh) * | 2016-07-15 | 2018-05-22 | 厦门乾照光电股份有限公司 | 一种高压发光二极管及其制作方法 |
| DE102017123542A1 (de) * | 2017-10-10 | 2019-04-11 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
Citations (1)
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| US20130270514A1 (en) * | 2012-04-16 | 2013-10-17 | Adam William Saxler | Low resistance bidirectional junctions in wide bandgap semiconductor materials |
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| US5936266A (en) * | 1997-07-22 | 1999-08-10 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and methods with tunnel contact hole sources |
| US6369403B1 (en) * | 1999-05-27 | 2002-04-09 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and methods with tunnel contact hole sources and non-continuous barrier layer |
| US6420732B1 (en) * | 2000-06-26 | 2002-07-16 | Luxnet Corporation | Light emitting diode of improved current blocking and light extraction structure |
| DE10244200A1 (de) | 2002-09-23 | 2004-04-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
| US7170097B2 (en) * | 2003-02-14 | 2007-01-30 | Cree, Inc. | Inverted light emitting diode on conductive substrate |
| TWI223460B (en) * | 2003-09-23 | 2004-11-01 | United Epitaxy Co Ltd | Light emitting diodes in series connection and method of making the same |
| US6906353B1 (en) * | 2003-11-17 | 2005-06-14 | Jds Uniphase Corporation | High speed implanted VCSEL |
| US20070029541A1 (en) * | 2005-08-04 | 2007-02-08 | Huoping Xin | High efficiency light emitting device |
| CN101882657A (zh) * | 2005-10-29 | 2010-11-10 | 三星电子株式会社 | 半导体器件及其制造方法 |
| DE102006057747B4 (de) * | 2006-09-27 | 2015-10-15 | Osram Opto Semiconductors Gmbh | Halbleiterkörper und Halbleiterchip mit einem Halbleiterkörper |
| KR101404781B1 (ko) | 2007-06-28 | 2014-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제조 방법 |
| DE102007032555A1 (de) * | 2007-07-12 | 2009-01-15 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
| TWI497745B (zh) * | 2008-08-06 | 2015-08-21 | Epistar Corp | 發光元件 |
| DE102010032497A1 (de) | 2010-07-28 | 2012-02-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips |
| TWI458122B (zh) * | 2011-11-23 | 2014-10-21 | Toshiba Kk | 半導體發光元件 |
| CN102738334B (zh) * | 2012-06-19 | 2015-07-08 | 厦门市三安光电科技有限公司 | 具有电流扩展层的发光二极管及其制作方法 |
| CN103730479A (zh) * | 2013-11-29 | 2014-04-16 | 南京大学扬州光电研究院 | 一种多发光子区GaN基LED集成芯片 |
| US9450147B2 (en) * | 2013-12-27 | 2016-09-20 | Apple Inc. | LED with internally confined current injection area |
| CN204516759U (zh) * | 2015-01-30 | 2015-07-29 | 大连德豪光电科技有限公司 | 倒装led芯片 |
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- 2017-05-24 TW TW106117124A patent/TWI637532B/zh active
- 2017-05-26 US US15/606,566 patent/US10103289B2/en active Active
- 2017-05-26 KR KR1020170065302A patent/KR101995628B1/ko active IP Right Grant
- 2017-05-27 CN CN201710388973.0A patent/CN107452736B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130270514A1 (en) * | 2012-04-16 | 2013-10-17 | Adam William Saxler | Low resistance bidirectional junctions in wide bandgap semiconductor materials |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201806180A (zh) | 2018-02-16 |
| CN107452736A (zh) | 2017-12-08 |
| DE102016006295A1 (de) | 2017-11-30 |
| EP3249700A1 (de) | 2017-11-29 |
| US10103289B2 (en) | 2018-10-16 |
| CN107452736B (zh) | 2019-06-18 |
| KR20170134257A (ko) | 2017-12-06 |
| US20170345970A1 (en) | 2017-11-30 |
| EP3249700B1 (de) | 2019-10-30 |
| KR101995628B1 (ko) | 2019-07-02 |
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