TWI601308B - Infrared LED - Google Patents
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- TWI601308B TWI601308B TW105129481A TW105129481A TWI601308B TW I601308 B TWI601308 B TW I601308B TW 105129481 A TW105129481 A TW 105129481A TW 105129481 A TW105129481 A TW 105129481A TW I601308 B TWI601308 B TW I601308B
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- 238000009826 distribution Methods 0.000 claims description 48
- 230000005641 tunneling Effects 0.000 claims description 39
- 238000005253 cladding Methods 0.000 claims description 28
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- 239000002019 doping agent Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 38
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims 2
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- 239000011229 interlayer Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
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Description
本發明係有關於一種紅外線LED。
為提高紅外線LED之效率,可以不同方式最佳化紅外線LED之磊晶結構。
由DE 10 2010 014 667 A1已知一種具有磊晶結構之紅外線LED,該磊晶結構在承載層與p型摻雜包覆層之間具有由一或數個p型摻雜AlGaAs層所形成之500nm厚的電流擴展層。
由DE 102 11 531 A1已知一種紅外線LED磊晶結構,除數個由III-V族化合物構成之半導體層外,該紅外線LED磊晶結構更具有高反射金屬層作為反射體以提高效率。
Yongqin Yu等人所著、2003年發表於Vacuum第69卷第489-493頁之“MOCVD growth of strain-compensated multi-quantum wells light emitting diode”一文,係探討紅外線發光二極體之量子效率及光輸出功率,該等紅外線發光二極體分別具有不同的、由InGaAs/GaAsP構成且以低壓CVD工藝形成之MQW作用層。
根據US 2007/0075327 A1所述,在p型摻雜包覆層與p型摻雜接觸層之間設置以氫原子為雜質之p型摻雜III-V族半導體層作為緩衝層,以防止摻雜劑在接觸層與包覆層之間擴散。
由EP 2 009 753 A1已知一種多束雷射二極體,其由若干堆疊佈置且透
過穿隧接面而電性串聯之雷射器疊堆(Laserstapel)形成。
在此背景下,本發明之目的在於提出一種能改良先前技術之裝置。
本發明用以達成該目的之解決方案為一種具有請求項1之特徵的紅外線LED。本發明之有益技術方案為附屬項之主題。
根據本發明之主題,一種紅外線LED,具有單塊堆疊式磊晶生長結構,其具有包含GaAs之n型摻雜基本基板、下包覆層、用於產生紅外線輻射之作用層、上包覆層、電流分佈層及上接觸層,其中該等層以上述順序設置,且其中在該上包覆層與該電流分佈層之間設有第一穿隧二極體,且其中該電流分佈層佔優勢地具有鎵含量大於1%之n型摻雜含鎵層。
需要說明的是,該作用層較佳構建為MQW層,其中較佳地,該作用層可實施為InxGa1-xAs/GaAs1-yPy多量子井結構,其中0.1x0.2且0.1y0.3。進一步需要說明的是,該MQW層包含一或數層,並且,該一或數個MQW層具有低於該下包覆層及/或該上包覆層之帶隙能量。當然,該穿隧二極體可被產生於該作用層中之紅外線輻射穿透。
MQW層在此係指多量子井結構(Multi Quantum Wells或MQW),其中“量子井結構”此一名稱中不包含關於量子化維度之說明。“量子井結構”此一名稱主要包括量子井、量子線及量子點,以及上述結構之任一組合。可以理解,當兩接觸層上被施加合適電壓時,MQW結構內部產生紅外光。較佳透過上接觸層實現光輸出耦合。
進一步需要說明的是,該下包覆層較佳具有n型摻雜,及/或,該上包覆層較佳具有p型摻雜。
藉由在該p型摻雜包覆層與該電流分佈層之間設置穿隧二極體層以形
成該第一穿隧二極體,特別容易實現由n型AlGaAs構成之n型摻雜電流分佈層。出人意料的發現是,藉由在紅外線LED中採用穿隧二極體,可如此這般調節層厚與摻雜,使得該穿隧二極體可被紅外線輻射充分穿透。由於電荷載子在n型摻雜層內部之移動率高於p型摻雜電流分佈層,以較小層厚已能實現相同的電流分佈或相同功效。研究結果表明,p型AlGaAs具有約為μp=100cm2/Vs之移動率,n型AlGaAs內部之移動率則約為μn=750cm2/Vs。
由於n型AlGaAs電流分佈層之吸收係數小於帶隙以下之p型AlGaAs層,具有n型AlGaAs電流分佈層而非p型AlGaAs電流分佈層之LED的光功率得以提高。較之p型AlGaAs電流分佈層,藉此可提高n型AlGaAs電流分佈層之摻雜。由於n型AlGaAs電流分佈層中摻雜提高且橫向電阻較之p型AlGaAs電流分佈層有所減小,可提高n型電流分佈層內部之橫向電流分佈,即均勻性。該電流分佈層對產生於該作用層中之輻射的吸收係數較佳小於150/cm。吸收係數愈小,則該紅外線LED之效率愈大。
在一實施方式中,該n型摻雜電流分佈層由GaAs或AlGaAs或InGaP構成。該電流分佈層較佳包括鋁含量x介於0%與20%間之n型摻雜AlxGa1-xAs層。
在一改良方案中,該n型摻雜電流分佈層具有0.1μm至0.4μm之厚度。該電流分佈層較佳具有介於0.5μm至2.5μm之厚度,且極佳具有1.5μm之厚度。
在一實施方式中,該電流分佈層具有大於1.0E18N/cm3之n型摻雜劑濃度。該電流分佈層之n型摻雜劑濃度較佳處於4E17N/cm3至5E18N/cm3範圍。
進一步較佳地,該電流分佈層具有小於400Ω或小於75Ω之薄片電阻R□。
在一實施方式中,該電流分佈層具有0.1μm至5μm範圍之厚度及/或4Ω至350Ω範圍之R□,或者,該電流分佈層具有0.2μm至1.5μm範圍之厚度及/或4Ω至75Ω範圍之薄片電阻R□。薄片電阻R□在此係指比薄片電阻。
本發明裝置之優點在於尺寸減小,光功率更高且製造成本降低。本發明裝置之另一優點在於,藉由使用上部的n型摻雜電流分佈層並在該電流分佈層與上包覆層之間設置穿隧二極體,可進一步使用n型摻雜GaAs基板來製造紅外線LED。若未按本發明這樣使用第一穿隧二極體,則製造LED時須使用更貴且品質更差之p型GaAs基板。
在一替代性實施方式中,在該電流分佈層與該上接觸層之間設有第二穿隧二極體,並且該上接觸層為p型摻雜,使得該結構在向外接頭方面形成一介面,該介面與不具有穿隧二極體層之傳統紅外線LED結構相同。
根據另一改良方案,該下包覆層及/或該上包覆層由GaAs或AlGaAs或InGaAsP或GaAsP或InGaP或AlInGaP構成,或者佔優勢地包含由GaAs或AlGaAs或InGaAsP或GaAsP或InGaP或AlInGaP構成之化合物。
在另一實施方式中,該作用層之厚度或該MQW層之厚度介於15nm與350nm之間,或者介於30nm與300nm之間,或者極佳介於200nm與400nm之間。在一改良方案中,該作用層之厚度或該MQW層之厚度為300nm。較佳地,該等穿隧二極體具有介於30nm與150nm間之厚度,較佳具有介於45nm與55nm間之厚度,極佳具有50nm之厚度。研究結果表明,以下是有益的:該穿隧二極體之厚度儘可能小於150nm,以便減小該穿隧二極體中紅外光之吸收損耗並提高該紅外線LED之光功率。尤其對於具有一定導電能力之重摻雜半導體層而言,Drude-Lorentz理論所論述之吸收損耗在
紅外光譜範圍內特別強烈。
優點在於,與p型摻雜電流分佈層之常規厚度相比,可節省超過4μm之層厚,相當於節省約35%,並且藉由增設穿隧二極體,亦能顯著減小紅外線LED之結構高度並提高光功率。
在一實施方式中,在該n型摻雜基本基板以下形成有下部的n型摻雜接觸層。在一改良方案中,該第一穿隧二極體及/或該第二穿隧二極體包括含砷層,其中該含砷層摻碳。在另一實施方式中,該第一穿隧二極體及/或該第二穿隧二極體包括含磷層,其中該含磷層摻碲。較佳地,該第一穿隧二極體及/或該第二穿隧二極體包括至少一摻雜劑濃度大於3x1018N/cm3之n型摻雜層以及至少一摻雜劑濃度大於1x1019N/cm3之p型摻雜層。
可以理解,在設於p型包覆層上之第一穿隧二極體中,首先為p型摻雜穿隧二極體層,接著為n型摻雜穿隧二極體層,之後為n型電流分佈層。在第二穿隧二極體中,該等摻雜層之極性順序翻轉。在n型電流分佈層之後為n型穿隧二極體層,接著為p型穿隧二極體層,而後為p型接觸層。
10‧‧‧磊晶生長結構,紅外線LED結構
12‧‧‧第一接點
14‧‧‧n型摻雜基本基板
16‧‧‧n型摻雜包覆層
18‧‧‧MQW層
20‧‧‧p型摻雜包覆層
22‧‧‧第一穿隧二極體
24‧‧‧電流分佈層
26‧‧‧接觸層
28‧‧‧第二穿隧二極體
30‧‧‧第二n型接點
下面結合圖式詳細闡述本發明。在此,同類型部件使用相同名稱。所示實施方式經高度示意性處理,意即,距離以及橫向及豎向延伸未按比例示出,且相互間亦不存在可推導出來的幾何關係,另有說明者除外。其中:圖1為根據本發明之紅外線LED的第一實施方式示意圖;圖2為根據本發明之紅外線LED的第二實施方式示意圖;圖3為根據先前技術之紅外線LED的實施方式示意圖。
圖1示出第一實施方式之視圖,其具有包含單塊堆疊式磊晶生長結構
10之紅外線LED,該磊晶生長結構按以下順序具有:由GaAs構成之n型摻雜基本基板14、n型摻雜包覆層16、MQW層18、p型摻雜包覆層20、第一穿隧二極體22、n型摻雜電流分佈層24及第二n型摻雜接觸層26。在將該磊晶生長結構處理成LED晶片時,進一步施覆第一接點12及第二n型接點30。
圖2示出具有磊晶生長結構10之紅外線LED的另一實施方式。下面僅闡述該實施方式與圖1所示內容之區別。在電流分佈層24之後設有第二穿隧二極體28,並且,設於該第二穿隧二極體之後的上接觸層26為p型摻雜。因此,設於該接觸層之後的接點30亦構建為對應p型半導體層之金屬接點。如此一來,本發明之紅外線LED結構10的接點與先前技術中未設穿隧二極體22及n型摻雜電流分佈層24之習知紅外線LED結構10(如圖3所示)的接點相一致。當然,圖3中根據先前技術之電流分佈層24為p型摻雜。
10‧‧‧磊晶生長結構,紅外線LED結構
12‧‧‧第一接點
14‧‧‧n型摻雜基本基板
16‧‧‧n型摻雜包覆層
18‧‧‧MQW層
20‧‧‧p型摻雜包覆層
22‧‧‧第一穿隧二極體
24‧‧‧電流分佈層
26‧‧‧接觸層
30‧‧‧第二n型接點
Claims (14)
- 一種包含單塊堆疊式結構(10)之紅外線LED,具有包含GaAs之n型摻雜基本基板(14)、下包覆層(16)、用於產生紅外線輻射之作用層(18)、上包覆層(20)、電流分佈層(24)及上接觸層(26),其中該等層以上述順序設置,其特徵在於,該上接觸層為磊晶生長,並且在該上包覆層(20)與該電流分佈層(24)之間設有第一穿隧二極體(22),其中該電流分佈層(24)佔優勢地具有鎵含量大於1%之n型摻雜含鎵層,並且該電流分佈層(24)具有小於75Ω之薄片電阻R□,並且該電流分佈層(24)由GaAs或AlGaAs或InGaP構成,並且,該第一穿隧二極體(22)具有介於30nm與150nm間之厚度且包括含砷p型層,其中該含砷層以大於1x1019N/cm3之摻雜劑濃度摻碳,以及含磷n型層,其中該含磷層以大於3x1018N/cm3之摻雜劑濃度摻碲。
- 如請求項1之紅外線LED,其特徵在於,在該電流分佈層(24)與該上接觸層(26)之間設有第二穿隧二極體(28),並且該上接觸層(26)為p型摻雜。
- 如請求項1之紅外線LED,其特徵在於,該下包覆層(16)佔優勢地包含由GaAs或AlGaAs或InGaAsP或GaAsP或InGaP或AlInGaP構成之化合物。
- 如請求項1或2之紅外線LED,其特徵在於,該上包覆層(20)佔優勢地包含由GaAs或AlGaAs或InGaAsP或GaAsP或InGaP或AlInGaP構成之化合物。
- 如請求項1之紅外線LED,其特徵在於,該作用層(18)由多量子井結構形成且具有介於15nm與350nm間之厚度或介於30nm與300nm間之厚度。
- 如請求項1之紅外線LED,其特徵在於,該電流分佈層(24)具有介於0.1μm至3.0μm之厚度。
- 如請求項1之紅外線LED,其特徵在於,該電流分佈層(24)包括鋁含量x介於0%與20%間之n型摻雜AlxGa1-xAs層。
- 如請求項1之紅外線LED,其特徵在於,該電流分佈層(24)具有大於1.0E18N/cm3之n型摻雜劑濃度。
- 如請求項1之紅外線LED,其特徵在於,該作用層(18)由InxGa1-xAs/GaAs1-yPy多量子井結構形成,其中0.1x0.2且0.1y0.3。
- 如請求項2之紅外線LED,其特徵在於, 該第二穿隧二極體(28)包括含砷層,其中該含砷層摻碳,及/或包括含磷層,其中該含磷層摻碲。
- 如請求項2或10之紅外線LED,其特徵在於,該第二穿隧二極體(28)包括摻雜劑濃度大於3x1018N/cm3之n型摻雜層以及摻雜劑濃度大於1x1019N/cm3之p型摻雜層。
- 如請求項1、2或10之紅外線LED,其特徵在於,該下包覆層(16)具有n型摻雜,及/或,該上包覆層(20)具有p型摻雜。
- 如請求項1、2或10之紅外線LED,其特徵在於,該穿隧二極體(22,28)可被產生於該作用層(18)中之輻射穿透。
- 如請求項1、2或10之紅外線LED,其特徵在於,該電流分佈層(24)對產生於該作用層中之輻射的吸收係數小於150/cm。
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