TWI636150B - Substrate holding mechanism, film formation apparatus, and substrate holding method - Google Patents

Abstract

The substrate holding mechanism (20) includes a holding portion (21, 22) having an outer peripheral portion on which the substrate (S) is placed on a placement surface (21S), and the substrate is held on the placement surface. The holding portion (21, 22) changes the position of the mounting surface (21S) between the first position (P1) and a second position (P2) different from the first position (P1). The holding portions (21, 22) include a suction portion and an electrostatic suction substrate (S) on at least a part of the mounting surface (21S).

Description

Substrate holding mechanism, film forming apparatus, and substrate holding method

The present invention relates to a substrate holding mechanism that holds a substrate, a film forming apparatus for forming a specific film on a substrate, and a substrate holding method.

As a film forming apparatus for forming a specific film on a substrate, for example, a leaf-type sputtering apparatus is known. The vane-type sputtering apparatus includes a processing chamber for performing a film formation process, and the processing chamber is provided with a target that is disposed substantially vertically and a substrate holding mechanism that holds a substrate and changes a posture of the substrate with respect to the target. The substrate holding mechanism changes the posture of the substrate in a substantially vertical state with respect to the target and a substantially parallel state with the target. As described above, in the sputtering apparatus, the substrate holding mechanism holds the substrate periphery mechanically on the mounting surface of the mounting table with a clamp mechanism (for example, refer to Patent Document 1).

[Previous Technical Literature]

[Patent Literature]

[Patent Document 1] JP 2004-332117

However, in recent years, for the purpose of reducing the weight of a product provided with a film formed by a sputtering device and imparting flexibility or softness to the product, the thickness of the substrate to be formed has to be smaller.

Here, when the substrate is held on the mounting table by the clamp mechanism, the force applied to the substrate at the base end of the clamp piece of the clamp mechanism is the largest, and the force applied to the substrate decreases toward the front end of the clamp piece. Then, the smaller the thickness of the substrate becomes, the greater the force exerted on the substrate by the clamp plate, the stress of the substrate portion connected to the base end of the clamp plate is concentrated, and the substrate is broken. Therefore, the force exerted by the clamp plate on the substrate has its limit. As a result, when the posture of the substrate is changed from a state substantially perpendicular to the target to a state substantially parallel, the degree of change in the position of the substrate and the degree of bending of the substrate may weaken the force applied to the substrate by the clamp.

In addition, this situation is not limited to the substrate holding mechanism whose substrate posture is changed by almost 90 °. The substrate holding mechanism is changed by changing the substrate posture because the substrate is shaken and the substrate surface is reversed. The same applies to the apparatus and other substrate processing apparatuses such as a vapor deposition or etching apparatus.

An object of the present invention is to provide a substrate holding mechanism, a film forming apparatus, and a substrate holding method, which suppress changes in the position of a substrate with respect to a mounting surface as the posture of the substrate changes.

According to one aspect, the substrate holding mechanism includes a holding portion having a mounting surface on which an outer peripheral portion of the substrate is mounted, and holding the substrate on the mounting surface at a first position and a second position different from the first position. The position of the mounting surface is changed between two positions; the holding portion includes: an adsorption portion that electrostatically adsorbs at least a portion of the substrate on the mounting surface.

According to this structure, since the outer peripheral portion of the substrate is placed on the placement surface and the substrate is attracted to at least a part of the placement surface, although the force for maintaining the position of the substrate is concentrated on the edge of the substrate, etc., it is affected by the substrate and the substrate. Surface contact is suppressed. Therefore, compared to holding the substrate with a clamp piece that focuses the force for holding the substrate position on the edge of the substrate or the like, the situation where the position of the substrate with respect to the mounting surface changes with the substrate posture is suppressed.

In another aspect of the substrate holding mechanism, it is preferable to further include: a temperature adjustment section that adjusts the temperature of the substrate; the mounting surface has a ring shape; and the temperature adjustment section is located inside the mounting surface.

According to this configuration, the temperature of the substrate held by the substrate holding mechanism can be adjusted by the temperature adjustment section.

In another aspect of the substrate holding mechanism, it is preferable that the temperature adjustment unit is configured to be located inside the mounting surface and separated from the substrate.

According to this structure, since the substrate temperature can be adjusted by the radiant heat of the temperature adjustment section separated from the substrate, the deviation of the temperature distribution within the substrate surface is suppressed.

In another aspect of the substrate holding mechanism, it is preferable that the temperature adjustment section is configured to be located inside the mounting surface and connected to the substrate.

According to this structure, since the temperature of the substrate can be adjusted by the temperature adjustment unit connected to the substrate, the temperature adjustment efficiency of the substrate is improved.

In another aspect of the substrate holding mechanism described above, it is preferable that the substrate holding mechanism further includes a first support portion disposed on an inner side of the mounting surface to support the substrate.

According to this configuration, since the first support portion is connected to the inner portion of the substrate that is more inward than the placement surface, the state of warping of the inner portion of the substrate is suppressed.

In another aspect of the substrate holding mechanism, it is preferable that the first support portion includes a front end portion connected to the substrate, and the front end portion includes a support adsorption portion that electrostatically adsorbs the substrate.

According to this configuration, since a part of the substrate is adsorbed by the supporting and suction portion, when the position of the placement surface is changed, the substrate placed on the placement surface is appropriately held.

In another aspect of the substrate holding mechanism, it is preferable that the holding portion further includes a second support portion that mechanically supports an edge of the substrate.

According to this structure, since the substrate supporting surface is supported by the second support portion in addition to the substrate mounting surface being adsorbed by the suction portion, the situation where the position of the substrate with respect to the mounting surface is changed is more suppressed.

According to one aspect, a film forming apparatus includes a film forming section that releases a film formation type to a substrate, and a holding section that has a mounting surface on which an outer peripheral portion of a substrate is placed, and holds the substrate on the placing surface and on the surface. Changing the position of the mounting surface between a first position of the film forming portion and a second position different from the first position; the holding portion includes an adsorption portion that electrostatically adsorbs at least the substrate on the mounting surface. a part.

According to this structure, since the outer peripheral portion of the substrate is placed on the mounting surface and the substrate is attracted to at least a part of the mounting surface, although the force for holding the position of the substrate is concentrated on the edge of the substrate, etc., it is affected by the substrate and the substrate. Face-to-face contact is suppressed. Therefore, compared to holding the substrate with a clamp piece that focuses the force for holding the substrate position on the edge of the substrate or the like, the situation where the position of the substrate with respect to the mounting surface changes with the substrate posture is suppressed.

In the film formation process, since the heat applied to the substrate by the film-forming species is difficult to be released to the outside of the substrate as it approaches the center of the substrate, the temperature at the center portion of the substrate, or even at the center portion of the holding portion that overlaps with the center portion of the substrate may Becomes high. Thereby, the temperature of the holding part may become higher than the temperature at which the adsorption part can operate.

In this regard, according to the structure of the film forming apparatus described above, since the suction section is located on the mounting surface where the outer peripheral portion of the substrate faces, the suction section is more attractive than the structure in which the suction section is located in other parts of the holding section. The increase in the temperature of the attachment portion is suppressed. As a result, the situation where the function of the suction section is reduced is also suppressed, and as a result, the posture of the substrate is changed as the position of the mounting surface changes, and the situation where the position of the substrate with respect to the mounting surface is changed is suppressed.

According to one aspect of the substrate holding method, the method includes: placing an outer peripheral portion of the substrate on a mounting surface whose position can be changed between a first position and a second position different from the first position; and electrostatically adsorbing the substrate on At least a part of the mounting surface.

Preferably, the substrate is electrostatically adsorbed, and includes: the outer peripheral portion of the substrate is adsorbed on at least two places on the mounting surface.

In one aspect, electrostatically adsorbing the substrate includes: starting adsorption of the outer peripheral portion of the substrate at one of at least two places on the mounting surface; and until the state where the adsorption is performed at both of the at least two places until The adsorption is maintained at the beginning of adsorption, and the adsorption at each of the at least two locations is sequentially started.

In one aspect, electrostatically adsorbing the substrate includes: starting adsorption on the outer peripheral portion of the substrate at all of the at least two places on the mounting surface; and releasing at least one of the at least two places after the adsorption is started. The aforementioned adsorption.

Preferably, the electrostatic adsorption of the substrate includes: a state in which the adsorption is performed in all of at least two places on the mounting surface, and the adsorption is released in at least one of the at least two places; and the adsorption is released by The adsorption is restarted here to perform the adsorption in at least two places.

In one aspect, the substrate is received on the mounting surface when the mounting surface is in the second position, and a film is formed when the mounting surface is in the first position; electrostatically adsorbing the substrate includes: When the placement surface is at the second position, the adsorption is started at one or all of at least two places of the placement surface; and when the placement surface is at the second position or the first position, the The aforementioned adsorption is released in at least one of the at least two places.

Further, it is preferable that releasing the adsorption at at least one of at least two places on the mounting surface includes: before the substrate is formed into a film, between the substrate being formed into a film, and after the substrate is formed into a film. In at least one, the suction is released at the first position on the mounting surface.

In one aspect, after the substrate is formed into a film and the mounting surface returns from the first position to the second position, the adsorption on at least two locations on the mounting surface is sequentially released.

In one aspect, canceling the adsorption at at least one of the at least two places on the mounting surface includes maintaining the adsorption at least one of the at least two places on the mounting surface, and in the at least two places. The aforementioned adsorption is released in at least one of the remaining places.

In one aspect, releasing the suction at at least one of the at least two places on the mounting surface includes mechanically holding the outer peripheral portion of the substrate with a clamp portion between the suction being released.

10‧‧‧Sputtering device

11‧‧‧ transport cavity

12‧‧‧Load lock cavity

13‧‧‧Sputtering Cavity

13a‧‧‧Vacuum tank

14‧‧‧Gate Valve

15‧‧‧ cathode

16‧‧‧ transport motor

20, 40, 50‧‧‧ substrate holding mechanism

21‧‧‧platform

21S, 41S, 51S‧‧‧ Loading surface

21Sa ~ 21Sd‧‧‧First ~ Fourth side

21a‧‧‧ opposite

21b‧‧‧Ditch

21c‧‧‧Gully

21c1, 24c‧‧‧‧ Waterway

21c2‧‧‧ Covering trench

21d‧‧‧Temperature adjustment part

22‧‧‧ Change Department

23, 91‧‧‧ Adsorption Department

23a‧‧‧Part I

23b‧‧‧Part II

24‧‧‧Temperature Adjustment Department

24a‧‧‧ cover parts

24b‧‧‧Matrix

31‧‧‧back

32‧‧‧ target

41, 51‧‧‧ bracket

42‧‧‧Transportation Department

52‧‧‧Reversal Department

61‧‧‧mat

70‧‧‧Support Department

70a‧‧‧Support

70b‧‧‧base end

71‧‧‧ Support adsorption department

72‧‧‧ support column

81‧‧‧ Clamp Department

D‧‧‧ Transport direction

P1‧‧‧First position

P2‧‧‧Second position

S‧‧‧ substrate

Sa‧‧‧ Peripheral Department

Sp‧‧‧Sputtered particles

The first figure is a schematic configuration diagram of a first embodiment of a sputtering apparatus as an example of a film forming apparatus.

The second figure is a schematic configuration diagram of a sputtering chamber according to the first embodiment.

The third figure is a plan view of the substrate holding mechanism.

The fourth figure is a partial cross-sectional view of a substrate holding mechanism according to a modification of the first embodiment.

The fifth figure is a partial cross-sectional view of a substrate holding mechanism according to another modification of the first embodiment.

FIG. 6 is a schematic configuration diagram of a film forming apparatus according to a modification of the first embodiment.

The seventh figure is a schematic configuration diagram of a substrate holding device according to another modification of the first embodiment.

FIG. 8 is a partial cross-sectional view of a substrate holding mechanism according to a second embodiment.

The ninth figure is a partial cross-sectional view of a substrate holding mechanism according to a modification of the second embodiment.

The tenth figure is a plan view of a substrate holding mechanism according to a third embodiment.

Fig. 11 is a partial cross-sectional view of a substrate holding mechanism according to a third embodiment.

FIG. 12 is a partially enlarged view showing a schematic configuration of a support unit according to a third embodiment.

Fig. 13 is a plan view of a substrate holding mechanism according to a fourth embodiment.

The fourteenth figure shows a partially enlarged view of a part of the clamp portion and a part of the substrate.

Fig. 15 is a diagram explaining the operation of the substrate holding mechanism according to the fourth embodiment.

Fig. 16 is a plan view of a suction unit according to a modification of the fourth embodiment.

[First embodiment]

The substrate holding mechanism, the film forming apparatus, and the substrate holding method according to the first embodiment will be described with reference to the first to third drawings. In the first embodiment, a sputtering apparatus as an example of a film forming apparatus and a substrate holding mechanism provided in the sputtering apparatus will be described. The following describes the overall structure of the sputtering apparatus, the structure of the sputtering chamber, the structure of the substrate holding mechanism, and the role of the sputtering apparatus in order.

[Overall Structure of Sputtering Device]

The entire structure of the sputtering apparatus will be described with reference to the first figure.

As shown in the first figure, the sputtering apparatus 10 includes: one transfer chamber 11; two load lock chambers 12 connected to the transfer chamber 11; and two sputtering chambers 13 connected to the transfer chamber 11. A gate valve 14 is arranged between each of the load lock chambers 12 and the transfer chamber 11 and between each of the sputtering chambers 13 and the transfer chamber 11. Each gate valve 14 changes the connection path between the chambers corresponding to the transfer chamber 11 between the connected state and the non-connected state.

The load lock chamber 12 carries the substrate S to be processed in the sputtering apparatus 10 into the inside from the outside of the sputtering apparatus 10, and carries out the inside of the sputtering apparatus 10 to the outside. When the load lock chamber 12 is carried in and out of the substrate S, the inside of the load lock chamber 12 is opened to the atmosphere in a state where the transfer chamber 11 is not connected. On the other hand, when the load chamber 12 transfers the substrate S and receives the substrate S from the transfer chamber 11, the load lock chamber 12 forms an internal space decompressed to a specific pressure together with the transfer chamber 11 in a state in which the transfer chamber 11 communicates.

In addition, the sputtering apparatus 10 may have a structure including one load lock chamber 12, or may have a structure including three or more load lock chambers 12.

The sputtering chamber 13 includes a cathode 15, and a specific film is formed on one surface of the substrate S by the cathode 15. When the sputtering chamber 13 forms a film on the substrate S, it forms an internal space that is decompressed to a pressure equal to or lower than the internal pressure of the transfer chamber 11.

The two sputtering chambers 13 of the sputtering apparatus 10 may each include a cathode 15 for forming the same film on the substrate S, or a cathode 15 for forming a different film on the substrate S. The sputtering apparatus 10 may have a structure including one sputtering chamber 13 or a structure including three or more sputtering chambers 13.

The transfer chamber 11 includes a transfer motor 16 that transfers the substrate S. The transfer motor 16 transfers the substrate S before film formation from the load lock chamber 12 to the sputtering chamber 13 through the transfer chamber 11, and transfers the film-formed substrate S from the sputtering chamber 13 to the load lock chamber 12 through the transfer chamber 11.

In addition, the sputtering device 10 may be provided with a cavity other than the load lock cavity 12 and the sputtering cavity 13, for example, a pre-processing chamber for performing a process before forming a film on the substrate S, or a process for forming a film after the substrate S. The processing of the post-processing chamber and so on.

[Structure of sputtering chamber]

The structure of the sputtering chamber 13 will be further described with reference to the second figure. In the following, for convenience of explanation, only the substrate holding mechanism 20 that holds the substrate S and the cathode 15 for forming a film on the substrate S in the configuration of the sputtering chamber 13 will be described.

As shown in the second figure, the sputtering chamber 13 includes a vacuum tank 13 a, and a substrate holding mechanism 20 holding a substrate S and a cathode 15 for forming a film on the substrate S are arranged inside the vacuum tank 13 a.

The vacuum tank 13 a has a box shape and has an internal space sized to accommodate the substrate holding mechanism 20 and the cathode 15. The internal space of the vacuum tank 13a is evacuated by an exhaust portion connected to the vacuum tank 13a, and is decompressed to a specific pressure (for example, vacuum).

The cathode 15 is fixed to the inner peripheral surface of the vacuum tank 13a. The cathode 15 is an example of a film forming portion, and includes a back plate 31 fixed to the inner peripheral surface of the vacuum tank 13 a and a target 32 fixed to the back plate 31.

The substrate holding mechanism 20 includes a stage 21 on which the substrate S is placed, and a changing unit 22 that changes the position of the stage 21 with respect to the cathode 15. The stage 21 and the changing section 22 constitute an example of a holding section. The stage 21 includes a mounting surface 21S and an outer peripheral portion on which the substrate S is mounted. The substrate holding mechanism 20 holds a substrate S placed on the mounting surface 21S.

The changing unit 22 changes the position of the platform 21 with respect to the cathode 15 between a position where the platform 21 is substantially perpendicular to the cathode 15 and a position where the platform 21 is substantially parallel with the cathode 15. That is, the changing unit 22 changes the position of the stage 21 between a state where the mounting surface 21S is located in a substantially horizontal direction and a state where the mounting surface 21S is located in a substantially vertical direction.

When the platform 21 is located at a position substantially parallel to the cathode 15, the mounting surface 21S is located at a first position P1 facing the cathode 15. On the other hand, when the platform 21 is located at a position substantially perpendicular to the cathode 15, the placement surface 21S is located at a position different from the first position P1, that is, at a second position P2 that does not face the cathode 15.

In this way, the changing unit 22 changes the position of the mounting surface 21S between the first position P1 and the second position P2 by changing the position of the stage 21 relative to the cathode 15, and changes the position of the mounting surface 21S to place the mounting surface 21S. The posture of the substrate S on the mounting surface 21S changes. When the mounting surface 21S is located at the first position P1, the entire substrate S held by the substrate holding mechanism 20 is covered with the target 32 in a direction in which the substrate S and the target 32 face each other. That is, the area of the substrate S is larger than that of the target. The area of 32 is even smaller.

When the film is formed on the substrate S, first, the changing unit 22 positions the mounting surface 21S at the first position P1 where the mounting surface 21S of the stage 21 and the cathode 15 face each other. Then, a specific sputtering gas is supplied to the inside of the vacuum tank 13 a, and then, a voltage is applied to the target 32 from the power source connected to the back plate 31 via the back plate 31.

Thereby, by generating a plasma around the target material 32, the ions in the plasma collide with the target material 32, and the target material 32 releases the sputtered particles Sp, which are film-forming species, to the substrate S. Then, since the sputtered particles Sp reach the substrate S, a specific film is formed on the film-forming surface of the substrate S facing the cathode 15.

[Structure of the substrate holding mechanism]

The structure of the substrate holding mechanism 20 will be described in more detail with reference to the third figure. In the third figure, for convenience of illustration, only the planar structure of the stage 21 of the substrate holding mechanism 20 is shown, and the outer peripheral portion of the substrate S held by the substrate holding mechanism 20 is shown by two dotted lines. Moreover, in the third figure, the upper part in the direction perpendicular to the paper surface is the upper part in the vertical direction.

As shown in the third figure, the stage 21 has a rectangular plate shape when viewed from the direction facing the placement surface 21S, and the substrate S placed on the placement surface 21S has a smaller rectangular plate shape than the stage 21. Further, each of the stage 21 and the substrate S may have a shape different from a rectangular plate shape when viewed from a direction facing the mounting surface 21S, for example, a circular shape or a polygonal shape.

The platform 21 includes an opposing surface 21 a that faces the cathode 15 when the mounting surface 21S is located at the first position P1. The mounting surface 21S is defined as a portion of the facing surface 21a of the outer peripheral portion Sa of the substrate S. The outer peripheral portion Sa of the substrate S is a band-shaped portion having a specific width including the outer peripheral edge of the substrate S. That is, the outer peripheral portion Sa of the substrate S has a rectangular ring shape surrounding the center portion of the substrate S.

The platform 21 has a rectangular plate shape, and the facing surface 21a of the platform 21 is a substantially flat surface. Therefore, almost all of the inner portion of the facing surface 21 a surrounded by the placement surface 21S is connected to a part of the non-film-forming surface of the substrate S. That is, of the facing surface 21a of the platform 21, the mounting surface 21S and an inner portion surrounding the mounting surface 21S are connected to the substrate S.

The substrate holding mechanism 20 further includes an adsorption unit 23 that electrostatically adsorbs the substrate S on at least a part of the mounting surface 21S. The mounting surface 21S corresponds to four sides of the outer peripheral portion Sa of the substrate S, and includes first to fourth side portions 21Sa to 21Sd. The platform 21 is positioned in a substantially vertical direction Next, the first side portion 21Sa of the mounting surface 21S is connected to almost all the upper end of the substrate S in the vertical direction, the second side portion 21Sb is connected to almost all of the lower end of the substrate S, and the third side portion 21Sc is connected to the vertical Almost all of the right end of the substrate S in the direction, and the fourth side portion 21Sb is connected to almost all of the left end of the substrate S. The suction portion 23 includes a first portion 23a provided on the first side portion Sa of the mounting surface 21S, and a second portion 23b provided on the second side portion 21Sb.

In addition, although the first portion 23a and the second portion 23b of the suction portion 23 are arranged in the example of the third figure, the first side portion 21Sa and the second side portion 21Sb of the mounting surface 21S corresponding to the upper and lower ends of the substrate S, respectively. However, the arrangement of the adsorption portion 23 is not limited to this. For example, instead of the first and second portions 23a and 23b, the suction portion 23 may be a third portion including a third side portion 21Sc provided on the mounting surface 21S on the right end of the corresponding substrate S, and a mounting provided on the left side of the corresponding substrate S. The structure of the fourth portion of the fourth side portion 21Sd of the surface 21S. Alternatively, the adsorption portion 23 may include these third and fourth portions and the first and second portions 23a and 23b. The adsorption portions are arranged on the first to fourth side portions 21Sa to 21Sd corresponding to the upper, lower, left, and right ends of the substrate S, respectively. .

When the mounting surface 21S of the stage 21 is located at the first position P1, the substrate S is positioned in a substantially vertical direction. Therefore, due to the own weight of the substrate S, the upper end of the substrate S moves downward in the vertical direction, and the lower end of the substrate S also moves downward in the vertical direction.

In this regard, the suction portion 23 is located on the first side portion 21Sa corresponding to almost the entire mounting surface 21S of the upper end of the substrate S in the vertical direction, and on the second side portion substantially the entire mounting surface 21S of the lower end of the substrate S. The structure of 21Sb is a preferable structure within a range that suppresses the movement of the substrate S as described above.

The suction section 23 constitutes a part of the facing surface 21a, that is, a part of the mounting surface 21S. Therefore, when the outer peripheral portion Sa of the substrate S is placed on the mounting surface 21S, the outer peripheral portion Sa of the substrate S is in direct surface contact with the suction portion 23.

In this way, since the peripheral portion Sa of the substrate S is placed on the mounting surface 21S, and the substrate S is attracted to at least a part of the mounting surface 21S, the force for holding the position of the substrate S is concentrated on the edge of the substrate S and the like. Surface contact between the substrate S and the mounting surface 21S is suppressed. Therefore, compared to holding the substrate S only with a clamp piece that focuses only on the edge of the substrate S with a force for holding the position of the substrate S, the position of the substrate S relative to the substrate S of the mounting surface 21S is changed as the posture of the substrate S changes. Position changes are more suppressed. Furthermore, since the electrostatic force of the adsorption portion 23 directly acts on the substrate S, the substrate S Easily adsorbed by the adsorption section 23.

In addition, the entire surface of the adsorption section 23 may not be directly connected to the substrate S, and for example, a part of the surface of the adsorption section 23 may be covered with an anti-adhesion plate for preventing adhesion of the film-forming species. The adsorption portion 23 may have a structure in which the entire surface of the adsorption portion 23 is not directly connected to the substrate S, or a structure that generates an electrostatic force that adsorbs only the substrate S placed on the mounting surface 21S.

The suction section 23 is, for example, an electrostatic chuck that suctions the substrate S with an electrostatic force. The adsorption section 23 may be a unipolar electrostatic chuck or a bipolar electrostatic chuck. In addition, the adsorption part 23 may be an electrostatic chuck that adsorbs the substrate S with a Coulomb force, an electrostatic chuck that adsorbs the substrate S with a Johnson-Rahbek force, or may adsorb with a gradient force. Electrostatic chuck of the substrate S.

[Role of Sputtering Device]

The operation of the sputtering apparatus 10 will be described.

When the changing unit 22 receives the substrate S before film formation from the conveyance motor 16, the mounting surface 21S is positioned at the second position P2 by moving the stage 21 to a state substantially perpendicular to the cathode 15. Then, when the substrate S is placed on the stage 21, the first and second portions 23a, 23b of the adsorption section 23 (that is, the entire adsorption section 23) adsorb the substrate S, and the changing section 22 moves the stage 21 to be substantially parallel to the cathode 15. State so that the mounting surface 21S is located at the first position P1. In addition, the change section 22 is maintained in a state where the stage 21 and the cathode 15 are substantially parallel between the start and the end of the film formation of the substrate S.

When the film formation on the substrate S is completed, the changing unit 22 moves the stage 21 to a state substantially perpendicular to the cathode, so that the placement surface 21S is located at the second position P2 again. Then, the first and second portions 23 a and 23 b of the suction unit 23 release the suction of the substrate S. As described above, in this example, not only in the film formation of the substrate S, the substrate S transported by the transport motor 16 is received by the substrate holding mechanism 20, but the film S formed by the substrate S is transported by the motor 16 20 is carried out until the transfer chamber 11, and all the suction portions 23 suction the outer peripheral portion Sa of the substrate S.

In the film forming process of forming the film on the substrate S, the closer to the center of the substrate S, the harder the heat applied to the substrate S by the sputtered particles Sp is released to the outside of the substrate S, so the temperature of the center portion of the substrate S and The temperature of the center part of the facing surface 21a where the center part of S overlaps becomes high. Thereby, the temperature of the facing surface 21a may become higher than the heat-resistant temperature of the component of the adsorption part 23.

Here, in the case where the adsorption part 23 is an electrostatic chuck that adsorbs the substrate S by Coulomb force, the constituent parts of the adsorption part 23 include an insulating layer that forms the surface of the electrostatic chuck and embeds an electrode, a base that supports the insulating layer, and the like. The insulating layer is formed using a resin such as polyimide, and the base is formed using aluminum, for example.

The heat-resistant temperature of these forming materials is, for example, about 200 ° C., and the heat-resistant temperature is a temperature at which the shape of the constituent members and the mechanical function can be maintained. When the adsorption portion 23 receives heat during the film formation process, the temperature of the adsorption portion 23 becomes higher than the heat-resistant temperature of the constituent members. Since the insulating layer is peeled from the base portion and the base portion is deformed, the function of the adsorption portion 23 to stably hold the substrate S may be Reduced, that is, the function of the adsorption portion 23 is reduced.

According to the sputtering apparatus 10 described above, since the adsorption portion 23 is located on the mounting surface 21S connected to the outer peripheral portion Sa of the substrate S, the temperature of the adsorption portion 23 is higher than that of the adsorption portion 23 located on the other surface 21a. The situation is more suppressed. That is, the temperature of the portion of the adsorption portion 23 located on the facing surface 21 a is difficult to become higher than the heat-resistant temperature of the components of the adsorption portion 23. Therefore, the temperature of the adsorption portion 23 becomes higher than that of the components of the adsorption portion 23. A situation where the heat-resistant temperature is higher and the function of the adsorption section 23 is reduced is suppressed. As a result, as the position of the mounting surface 21S changes, the posture of the substrate S changes, and the situation where the position of the substrate S with respect to the mounting surface 21S changes is suppressed.

As described above, according to the first embodiment, the following effects can be obtained.

(1) Since the peripheral portion Sa of the substrate S is placed on the mounting surface 21S and the substrate S is attracted to at least a part of the mounting surface 21S, the force for holding the position of the substrate S is concentrated on the edge of the substrate S, etc. It is suppressed by the surface contact of the board | substrate S and the mounting surface 21S. Therefore, compared to holding the substrate S only with a clamp piece that focuses only on the edge of the substrate S with a force for holding the position of the substrate S, the position of the substrate S relative to the substrate S of the mounting surface 21S is changed as the posture of the substrate S changes. Position changes are more suppressed.

(2) Since the temperature increase of the adsorption section 23 is suppressed, and the function reduction of the adsorption section 23 is suppressed, the position of the substrate S relative to the mounting surface 21S is changed as the posture of the substrate S is changed. suppressed.

In addition, the first embodiment described above may be appropriately modified and implemented as follows.

The substrate holding mechanism 20 may include a temperature adjustment section that adjusts the temperature of the substrate S, and the temperature adjustment section is preferably located inside the mounting surface 21S. In addition, the temperature adjustment unit may be directly connected to the substrate S by including a surface located on the same plane as the mounting surface 21S, and the entire temperature adjustment unit may be connected by a position. The structure inside the platform 21 is indirectly connected to the substrate S via the platform 21.

A configuration example in which the temperature adjustment section is directly connected to the substrate S will be described with reference to FIGS. 4 and 5. The fourth and fifth figures show the cross-sectional structure of the platform 21 in a state where the platform 21 is located along the substantially horizontal direction, and the facing surface 21a of the platform 21 is a surface along the substantially horizontal direction.

As shown in the fourth figure, the metal platform 21 has a groove portion 21c recessed from the facing surface 21a on the inner side of the mounting surface 21S. The groove portion 21c is a metal cover member 24a which is inserted into the water channel 21c1 and plugs the opening of the water channel 21c1. The cover is formed with a groove 21c2. A warming medium or a refrigerant heating medium is supplied to the water path 21c1. The depth of the cover groove 21c2 along the vertical direction is approximately equal to the thickness of the cover member 24a. The cover member 24a is fitted on the same plane as the mounting surface 21S by being fitted into the cover groove 21c2.

The portion of the platform 21 that divides the water path 21c1 functions as a temperature adjustment portion 21d that is heated or cooled by a heating medium. Therefore, in the substrate holding mechanism 20 provided with such a platform 21, the temperature adjustment portion 21d and the cover member 24a constitute a temperature adjustment portion 24 integrated with the platform 21.

The fifth figure shows a configuration example of another temperature adjustment unit 24. The mounting surface 21S of the substrate holding mechanism 20 has a ring shape when viewed from a direction facing the mounting surface 21S. In the platform 21, one groove 21b recessed from the facing surface 21a is formed in a portion of the facing surface 21a located more inward than the placement surface 21S. The temperature adjustment part 24 is located inside the groove 21b, and has substantially the same size as the space divided by the groove 21b. Therefore, the upper surface of the temperature adjustment part 24 is located on the same plane as the mounting surface 21S. The temperature adjustment unit 24 includes a metal base 24b different from the platform 21, and the base 24b has a water path 24c for supplying a heating medium.

In addition, the thickness of the base 24b is substantially equal to the depth of the groove 21b, and the size of the plane viewing angle of the base 24b may be smaller than the space divided by the groove 21b. That is, the temperature adjustment unit 24 is connected to the substrate S, and may have a size having a gap between the inner wall surfaces of the platform 21 defining the groove 21 b.

Moreover, the temperature adjustment part 24 which is different from the platform 21 may have a structure including a base body and a cover member. In this case, the substrate has a water passage opened on one surface of the base body, and the cover member plugs the water passage opening.

As described above, if the mounting surface 21S of the platform 21 has a ring shape, and the temperature adjustment unit 24 is configured to be positioned inside the mounting surface 21S and connected to the substrate S, the following effects can be obtained.

(3) Since the temperature of the substrate S is adjusted by the temperature adjustment unit 24 connected to the substrate S, The temperature adjustment efficiency of the substrate S is improved.

‧The adsorption unit 23 may be configured to adsorb the substrate S at a plurality of adsorption sites juxtaposed at intervals on the first side portion 21Sa of the mounting surface 21S connected to the upper end of the substrate S when the mounting surface 21S is located at the first position P1. In addition, the adsorption section 23 may have a structure in which the substrate S is adsorbed on a plurality of adsorption sites juxtaposed at intervals on the second side 21Sb of the mounting surface 21S connected to the lower end of the substrate S when the mounting surface 21S is located at the first position P1. . In addition, the adsorption section 23 may combine a structure in which a plurality of adsorption sites that are discretely located on the first side portion 21Sa of the mounting surface 21S adsorb the substrate S and a plurality of adsorptions that are discretely located in the second side portion 21Sb of the mounting surface 21S. The structure of the site | part adsorption board | substrate S is implemented.

In addition, the structure in which the plurality of adsorption sites S that are discretely located in the adsorption unit 23 adsorbs the substrate S can be embodied, for example, by disposing a plurality of static electricity at intervals along the first side portion 21Sa and the second side portion 21Sb of the mounting surface 21S. Structure of the chuck.

‧When the mounting surface 21S is located at the first position P1, the suction portion 23 is apart from the first side portion 21Sa of the mounting surface 21S connected to the upper end of the substrate S and the second side portion of the mounting surface 21S connected to the lower end of the substrate S. The 21Sb electrostatically adsorbs the substrate S, and may electrostatically adsorb the substrate S on the third side portion 21Sc of the mounting surface 21S connected to the right end of the substrate S and the fourth side portion 21Sd of the mounting surface 21S connected to the left end of the substrate S. In this case, the suction unit 23 may be configured such that one or more electrostatic chucks are located on the first to fourth side portions 21Sa to 21Sd of the mounting surface 21S. Alternatively, the suction unit 23 may be constituted by one electrostatic chuck that can electrostatically suck the substrate S on the entire mounting surface 21S.

• The cathode 15 may not be fixed to the vacuum tank 13a, and the cathode 15 may have a structure including a cathode transfer mechanism that changes the position of the cathode 15 with respect to the substrate S when the mounting surface 21S is located at the first position P1. With such a structure, the width of the back plate 31 and the target 32 constituting the cathode 15 and the transport direction of the cathode 15, that is, one of the four sides of the substrate S is preferably narrower than that of the substrate S.

The suction unit 23 may have a structure capable of suctioning the substrate S at a timing when the first portion 32a and the second portion 32b are independent of each other. With such a configuration, in a state where the changing portion 22 has the placement surface 21S at the first position P1 or the second position P2, for example, the first portion 32a of the suction portion 23 maintains the suction of the substrate S, and at the same time, the second portion 32b may be temporarily The adsorption of the substrate S is released.

When the substrate S is placed on the placement surface 21S, that is, the placement surface 21S of the platform 21 is located not facing the shade At the second position P2 of the pole 15, when the outer peripheral portion Sa of the substrate S is adsorbed by the adsorption portion 23 at this position, if all the adsorption portions 23 (the first portion 32a and the second portion in the example of the third figure) are to be attracted at one time 32b) If the substrate S is sucked, the suction timing may deviate, and a part of the substrate S protrudes from the mounting surface 21S (that is, the state where the substrate S is deformed) may be sucked by the sucking portion 23.

In addition, since a film stress is formed on the substrate S, the substrate S placed on the placement surface 21S may be deformed.

In this way, the substrate S may be deformed before and after the film is formed on the substrate S. In such a case, in a state where the changing section 22 has the placement surface 21S at the first position P1 or the second position P2, the substrate S is temporarily released by the second portion 23b, thereby removing the deformation of the substrate S. It is possible to keep the substrate S placed on the mounting surface 21S from being bent.

In addition, in a state where the changing surface 22 has the placement surface 21S at the first position P1 or the second position P2, the first portion 23a of the suction portion 23 maintains the suction of the substrate S, and the second portion 23b temporarily releases the suction of the substrate S. The substrate S may be adsorbed again.

In this way, when the substrate S placed on the placement surface 21S is deformed, the substrate S that is adsorbed by the second portion 23b of the adsorption portion 23 is temporarily released, and the substrate S is again adsorbed to eliminate the placement on the placement surface. The substrate S of the 21S is deformed, and the substrate S can be adsorbed without being bent.

In addition, in forming a film on the substrate S, the first portion 23a of the adsorption unit 23 maintains the adsorption of the substrate S, and the second portion 23b may simultaneously release the adsorption of the substrate S. Then, after the film formation on the substrate S is completed, the second portion 23b may adsorb the substrate S again in a state where the changing portion 22 has the placement surface 21S at the first position P1. Thereby, even if heat is input to the substrate S and the substrate is deformed, the adsorption of the substrate S by the second portion 23b is cancelled, so the substrate S is deformed (thermally expanded) along the mounting surface 21S and can be maintained relative to the mounting surface 21S. Flat state. Furthermore, in a state where the substrate S placed on the mounting surface 21S is flat, the substrate S can be adsorbed without being bent.

With such a structure, the temperature of the substrate S is adjusted by the temperature adjustment unit 24 in a state where the mounting surface 21S is located at the second position P2, which is effective even if the substrate S is thermally deformed. Even in the case where the temperature adjustment section 24 thermally expands the substrate S due to temperature adjustment, the first section 23a of the adsorption section 23 maintains the adsorption of the substrate S and the second section 23b releases the adsorption of the substrate S, so the substrate S is along the mounting surface 21S. The deformation (thermal expansion) can maintain a flat state with respect to the mounting surface 21S. In other words, the thermal expansion of the substrate S generated during the temperature adjustment is released in the second portion 23b. The deformation of the substrate S is released between the adsorption of the substrate S. After the deformation of the substrate S is released, the substrate S is adsorbed by the second portion 23b.

In this case, when the substrate S is placed on the mounting surface 21S, the substrate S may be adsorbed only by the first portion 23a of the adsorption portion 23 first. That is, first, it is not necessary to adsorb the substrate S with the entire adsorption section 23. In this way, the suction is started at the second position P2, and the remaining suction parts 23 also sequentially start the suction of the substrate S, so that the deformation of the substrate S can be released and the substrate S can be held flat.

This structure is also effective when the adsorption of the substrate S after the film formation is released. For example, the formed substrate S may be deformed in a state where the second position P2 is placed on the placing surface 21S. In this case, when the plurality of adsorption units 23 are temporarily desorbed, the deformation of the substrate S is temporarily released at the same time when the adsorption is released, so that the substrate S may be deviated from the position such as sliding relative to the mounting surface 21S.

In this case, since the plurality of suction sections 23 are sequentially released, the deformation of the substrate S can be released in stages. When the last suction section 23 is released, the substrate S is already flat with respect to the mounting surface 21S, so the substrate S does not cause a positional deviation from the placement surface 21S.

‧ As shown in FIG. 6, the sputtering apparatus may be configured to transport the substrate S while the substrate S is standing in a substantially vertical direction. Moreover, the schematic structure of the sputtering apparatus seen from the direction which faces the upper end of the board | substrate S is shown in FIG.

For example, the substrate holding mechanism 40 may have a structure including a carrier 41 that holds a substrate S, a transport unit 42 that transports the carrier 41 along the transport direction D, and a suction unit 23. A mounting surface 41S on which the outer peripheral portion Sa of the substrate S is mounted is formed on one surface of the bracket 41, and the suction portion 23 electrostatically sucks the substrate S on at least a part of the mounting surface 41S.

The conveyance unit 42 holds the carriage 41 in a state where the carriage 41 is in a substantially vertical direction. The conveyance unit 42 is transported from a position where the bracket 41 and the cathode 15 fixed in the vacuum chamber 13 a of the sputtering chamber 13 do not face each other, along a conveyance direction D, to a position where the bracket 41 and the cathode 15 face each other. The transport unit 42 transports the carrier 41 along the transport direction D from a position where the carrier 41 faces the cathode 15 to a position where the carrier 41 and the cathode 15 do not face each other.

That is, when the bracket 41 and the cathode 15 face each other, the mounting surface 41S is located at the first position P1 facing the cathode 15. On the other hand, when the bracket 41 and the cathode 15 do not face each other, the mounting surface 41S is located at a second position P2 different from the first position P1.

When the transfer unit 42 is formed on the substrate S held by the carriage 41, the In order to fix the position of the substrate S with respect to the cathode 15, the position of the substrate S with respect to the cathode 15 may be changed along the conveying direction D.

‧ As shown in FIG. 7, the substrate holding mechanism 50 may have a structure including a bracket 51 that holds the substrate S, a reversing portion 52 that reverses the bracket 51, and a suction portion 23. A mounting surface 51S on which the outer peripheral portion Sa of the substrate S is mounted is formed on one surface of the bracket 51, and the suction portion 23 electrostatically sucks the substrate S on at least a part of the mounting surface 51S.

The reversing section 52 reverses the bracket 51 around a rotation axis along the horizontal direction, and changes the direction of the bracket 51 between a state where the substrate S is above the bracket 51 and a state where the substrate S is below the bracket 51. Then, for example, in a state where the substrate S is positioned above the cradle 51, the mounting surface 51S is positioned at a first position facing the film formation portion (cathode 15). On the other hand, in a state where the substrate S is located below the cradle 51, the placement surface 51S is located at a position different from the first position, that is, at a second position that does not face the film forming portion (cathode 15).

The mounting surface 51S of the substrate holding mechanism 50 may be a first position facing the film forming portion (cathode 15) in a state where the substrate S is positioned below the bracket 51, and the substrate S is positioned above the bracket 51. The structure is located in the second position which does not face the film formation part (cathode 15) in the state.

‧The film-forming apparatus is not limited to the above-mentioned sputtering apparatus, but may be, for example, a vacuum evaporation apparatus or the like, and may be an apparatus for forming a specific film on one surface of the substrate S.

‧The substrate holding mechanism is not limited to those having a film forming apparatus such as the above-mentioned sputtering apparatus, and may be other substrate processing apparatuses, for example, a substrate holding apparatus including an etching apparatus or a laser irradiation apparatus.

‧ The configurations of the first embodiment and the modifications of the first embodiment may be implemented in appropriate combinations.

[Second Embodiment]

A substrate holding mechanism, a film forming apparatus, and a substrate holding method according to the second embodiment will be described with reference to FIG. 8. In the second embodiment, a sputtering apparatus as an example of a film forming apparatus and a substrate holding mechanism including the sputtering apparatus will be described. Moreover, compared with the first embodiment, the second embodiment has a different peripheral structure on the mounting surface of the substrate holding mechanism. Therefore, this difference is explained in detail below, and the structure common to the first embodiment in the second embodiment is given in the same manner as the first embodiment. The same numbers will be omitted.

[Structure of the substrate holding mechanism]

The structure of the substrate holding mechanism 20 will be described with reference to the eighth figure. In the eighth figure, the illustration of the changing unit 22 of the substrate holding mechanism 20 is omitted for convenience of illustration.

As shown in FIG. 8, the mounting surface 21S of the substrate holding mechanism 20 has a ring shape when viewed from a direction facing the mounting surface 21S, and the inside of the mounting surface 21S is hollow. That is, in the stage 21 of the substrate holding mechanism 20, a recessed groove 21b recessed from the opposing surface 21a is formed in a portion of the opposing surface 21a which is more inward than the mounting surface 21S. Therefore, the non-film-forming surface on the opposite side of the film-forming surface of the substrate S facing the cathode 15 is connected to the mounting surface 21S of the platform 21, and the portion other than the mounting surface 21S is not connected to the platform 21.

As a result, since the portion of the substrate S other than the mounting surface 21S is not in contact with the stage 21 of the substrate holding mechanism 20, in the contact area between the substrate S and the stage 21, particles including sputtering particles Sp and the like are covered by the substrate S and the stage. The condition of 21 pinch is suppressed. Therefore, the non-film-forming surface of the substrate S is prevented from being contaminated and damaged by particles.

The substrate holding mechanism 20 further includes a temperature adjustment unit 24 that adjusts the temperature of the substrate S, and the temperature adjustment unit 24 is configured to be located inside the mounting surface 21S and separated from the substrate S. That is, the temperature adjustment part 24 is located inside the mounting surface 21S, and is located inside the groove 21b. Then, in a state where the stage 21 is located in a substantially horizontal direction, the depth of the recessed groove 21b in the vertical direction is greater than the width of the temperature adjustment portion 24 in the vertical direction, so the temperature adjustment portion 24 is not connected to the substrate. Non-film-forming surface of S.

Therefore, since the temperature of the substrate S is adjusted by the radiant heat of the temperature adjustment unit 24 separated from the substrate S, deviations in the temperature distribution within the plane of the substrate S are suppressed.

As described above, according to the second embodiment, the following effects can be obtained.

(4) Since particles are sandwiched between the substrate S and the stage 21, the non-film-forming surface of the substrate S is contaminated and damaged by particles.

(5) Since the temperature of the substrate S is adjusted by the radiant heat of the temperature adjustment unit 24 separated from the substrate S, deviations in the temperature distribution within the plane of the substrate S are suppressed.

In addition, the said 2nd embodiment can also be implemented as suitably changed as follows.

‧As shown in the ninth figure, the temperature adjustment unit 24 includes: The lower side of the ninth figure) and the second side (on the upper side of the ninth figure) located on the opposite side and facing the substrate S. The plurality of pads 61 may be located on the second surface of the temperature adjustment unit 24. In the structure of the ninth figure, each pad 61 is an example of a first support portion. The plurality of pads 61 are made of resin, and heat conduction through the pads 61 is hardly generated between the temperature adjustment unit 24 and the substrate S. Therefore, the temperature adjustment section 24 adjusts the temperature of the substrate S by the radiant heat of the temperature adjustment section 24.

The thickness of the pad 61 is substantially equal to the distance from the second surface of the temperature adjustment section 24 to the facing surface 21 a of the platform 21. The pad 61 has an end surface (front end portion) located on the same plane as the mounting surface 21S. Therefore, when the substrate S is placed on the mounting surface 21S, the end face of each pad 61 is connected to the substrate S.

Since the pad 61 supports an inner portion of the substrate S facing the groove 21 b, the state in which the inner portion of the substrate S is bent toward the temperature adjustment unit 24 is suppressed. Therefore, the state where the substrate S is connected to the temperature adjustment unit 24 is suppressed. As a result, the temperature of the substrate S is rapidly changed, and the pressure applied to the substrate S is suppressed. Further, since the state where the substrate S is connected to the temperature adjustment unit 24 is suppressed, the state where the substrate S is damaged by the temperature adjustment unit 24 is suppressed.

• In the substrate holding mechanism 20, the temperature adjustment unit 24 may be omitted. Even with such a structure, the effect (4) described above can be obtained by forming the groove 21b in the platform 21.

• Each configuration of the second embodiment and the modification of the second embodiment may be implemented by appropriately combining each configuration of the modification of the first embodiment.

[Third Embodiment]

A substrate holding mechanism, a film forming apparatus, and a substrate holding method according to the third embodiment will be described with reference to FIGS. 10 to 12. In the third embodiment, a sputtering apparatus as an example of a film forming apparatus and a substrate holding mechanism including the sputtering apparatus will be described. The third embodiment is different from the second embodiment in that the substrate holding mechanism includes a support portion that supports the substrate. Therefore, this difference will be described in detail below, and in the structure common to the second embodiment, the detailed description will be omitted by assigning the same number.

[Structure of the substrate holding mechanism]

The structure of the substrate holding mechanism 20 will be described with reference to FIGS. 10 to 12. In the tenth figure, for the sake of convenience of illustration, like the third figure, only the planar structure of the stage 21 of the substrate holding mechanism 20 is shown, and the outer peripheral portion Sa of the substrate S held by the substrate holding mechanism 20 is shown by two dotted lines. Moreover, in the tenth figure, the upper direction in the direction perpendicular to the paper surface is the upper direction in the vertical direction. Then, on the eleventh In the figure, for the sake of convenience of illustration, like the sixth figure, the illustration of the changing section 22 of the substrate holding mechanism 20 is omitted. In the twelfth figure, for convenience of illustration, a part of the substrate S and a part of the supporting part are schematically shown.

As shown in the tenth figure, the substrate holding mechanism 20 further includes a support portion 70 which is an example of a first support portion. The support portion 70 is disposed inside the mounting surface 21S and supports the substrate S. The substrate holding mechanism 20 includes a plurality of support portions 70, for example, four support portions 70, and each support portion 70 is located inside the groove 21b. The support portion 70 supports the substrate S by connecting the front end to the non-film-forming surface of the substrate S.

The support portion 70 supports the inner portion of the substrate S located more inward than the mounting surface 21S to suppress the bending of the inner portion of the substrate S. That is, the support portion 70 suppresses the situation where the inner portion of the substrate S facing the groove 21 b is convexly bent toward the bottom of the groove 21 b.

The groove 21b is a rectangular hole with a bottom, and each support portion 70 is arranged at one of the four corners of the rectangular hole. The four support portions 70 surround the temperature adjustment portion 24 located inside the groove 21 b. In other words, the four support portions 70 are disposed outside the temperature adjustment portion 24 in a space surrounded by the groove 21 b in a plan view of the facing surface 21 a facing the platform 21.

Moreover, each support part 70 may be arrange | positioned in the part other than the four corners of a bottomed rectangular hole, ie, the part arrange | positioned along each side of the bottom part of the groove 21b. Alternatively, each support portion 70 may be disposed at a position overlapping the temperature adjustment portion 24 in a space surrounded by the recessed groove 21 b, for example, in a plane viewing angle facing the facing surface 21 a. The groove 21b may be a hole other than a rectangular hole, for example, a circular hole. The important point is that each support portion 70 may be arranged at a position where the substrate S can be supported inside the mounting surface 21S. In addition, the substrate holding mechanism 20 may include three or less support sections 70, or may include five or more support sections 70.

As shown in FIG. 11, each support portion 70 has a column shape extending in one direction. When the mounting surface 21S of the platform 21 is in a substantially horizontal direction, each support portion 70 extends in a substantially vertical direction. The bottom of the groove 21b has a rectangular plane. The base end portion 70b of the support portion 70 is located at the bottom of the groove 21b. The support portion 70 extends from the bottom of the groove 21b to the opening of the groove 21b. The support portion 70 has a length substantially the same as the depth of the groove 21 b, and the front end portion 70 a of the support portion 70 is in contact with the non-film-forming surface of the substrate S.

As shown in FIG. 12, the front end portion 70 a of the support portion 70 includes a support suction portion 71 and an electrostatic suction substrate S. The part supporting the support part 70 other than the suction part 71 is a support support. Hold the support column 72 of the adsorption section 71. Since the support portion 70 includes the support suction portion 71, a part of the substrate S is suctioned by the support suction portion 71. Therefore, it is easier to hold the substrate S placed on the placement surface 21S. The support suction section 71 is, for example, an electrostatic chuck, and preferably has the same suction function as the suction section 23 described above.

The support suction part 71 has the front-end | tip part 70a of the support part 70 as a front-end surface. Therefore, the supporting and adsorption portion 71 is directly connected to the non-film-forming surface of the substrate S, and as a result, the substrate S is easily adsorbed by the supporting and adsorption portion 71.

In addition, the support adsorption section 71 is located inside the support column 72 of the support section 70. The support column 72 may have a structure connected to the substrate S. Even in such a structure, if the support adsorption section 71 has a degree of static electricity that can adsorb the substrate S, Just force.

As described above, according to the third embodiment, the following effects can be obtained.

(6) Since the support portion 70 is connected to the inner portion of the substrate S positioned more inward than the mounting surface 21S, the situation where the inner portion of the substrate S is bent is suppressed.

(7) Since a part of the substrate S is attracted by the support and suction section 71, when the position of the placement surface 21S is changed between the first position P1 and the second position P2, the placement on the placement surface 21S can be appropriately maintained. Of the substrate S.

In addition, the third embodiment described above may be implemented with appropriate changes as described below.

‧ If the substrate holding mechanism 20 includes a plurality of support sections 70, only a part of the support sections 70 of the plurality of support sections 70 may include a support suction section 71.

‧ The support suction section 71 provided in the support section 70 may be omitted. Even with such a configuration, as long as the substrate holding mechanism 20 includes the support portion 70 connected to the non-film-forming surface of the substrate S, the effect (6) described above can be obtained.

• In the substrate holding mechanism 20, the temperature adjustment unit 24 may be omitted. Even with such a configuration, as long as the substrate holding mechanism 20 includes the support portion 70 connected to the non-film-forming surface of the substrate S, the effect (6) described above can be obtained.

• Each structure of the third embodiment and the modification of the third embodiment may be implemented by appropriately combining the structures of the modification of the first embodiment and the modification of the second embodiment.

[Fourth Embodiment]

A film forming apparatus and a substrate protection method according to the fourth embodiment will be described with reference to FIGS. 13 to 15. Holding mechanism and substrate holding method. In the fourth embodiment, a sputtering apparatus as an example of a film forming apparatus and a substrate holding mechanism including the sputtering apparatus will be described. The fourth embodiment is different from the first embodiment in that the substrate holding mechanism includes a clamp portion. Therefore, this difference will be described in detail below, and the same configuration as in the first embodiment will be given the same reference number, and detailed description thereof will be omitted.

[Structure of the substrate holding mechanism]

The structure of the substrate holding mechanism 20 will be described with reference to FIGS. 13 to 15. In the thirteenth figure, for convenience of illustration, as in the third figure, only the planar structure of the stage 21 of the substrate holding mechanism 20 is shown, and the outer peripheral portion Sa of the substrate S held by the substrate holding mechanism 20 is shown by two dotted lines. . Moreover, in the thirteenth figure, the upper side in the direction perpendicular to the paper surface is the upper side in the vertical direction. Next, in the fourteenth figure, the structure viewed from the direction in which the clamp portion and the substrate face the substrate end surface, that is, the schematic structure of a part of the clamp portion and the substrate S is shown in an enlarged manner.

As shown in the thirteenth figure, the substrate holding mechanism 20 includes a suction section 23, and the suction section 23 electrostatically sucks the substrate S on the mounting surface 21S in contact with the upper end of the substrate S in a state where the mounting surface 21S is at the first position P1. First side portion 21Sa. That is, the suction surface of the suction portion 23 is exposed on the first side portion 21Sa of the mounting surface 21S.

Thereby, when the substrate S is placed on the mounting surface 21S, a part of the non-film-forming surface of the substrate S is in direct surface contact with the adsorption portion 23, so the substrate S is easily adsorbed by the adsorption portion 23. Moreover, even in the first embodiment and the like, as described above, the entire adsorption section 23 may be located inside the stage 21.

As described above, the substrate holding mechanism 20 has a function of positioning the mounting surface 21S at the first position P1 in the substantially vertical direction. The substrate holding mechanism 20 further includes a clamp portion 81 which is an example of a second support portion. The clamp portion 81 is pressed against the mounting surface at the lower end in the vertical direction of the substrate S with the mounting surface 21S positioned in the vertical direction. Abuts the substrate S. That is, the clamp portion 81 mechanically supports the substrate S by being connected to the edge of the substrate S.

The substrate holding mechanism 20 includes a plurality of clamp portions 81, for example, three clamp portions 81, and the three clamp portions 81 are arranged in parallel at a predetermined interval on the lower end of the substrate S. The substrate holding mechanism 20 may have a configuration including two or less clamp portions 81, or a configuration including four or more clamp portions 81.

As shown in FIG. 14, the clamp portion 81 is changed to a position where the distance between the clamp portion 81 and the platform 21 is small by changing the position changing portion of the clamp portion 81 relative to the platform 21. The distance between the jaw 81 and the platform 21 is a large non-holding distance. In addition, in the fourteenth figure, the clamp portion 81 at the holding position is shown by a solid line, and the clamp portion 81 at the non-holding position is shown by two dotted lines.

When the outer peripheral portion Sa of the substrate S is placed on the placement surface 21S and when it is separated from the placement surface 21S, the clamp portion 81 is located at the non-holding position. On the other hand, when the substrate S is held on the stage 21, the clamp portion 81 is located at the holding position.

When the clamp portion 81 is located at the holding position, the lower end of the substrate S may be connected to the clamp portion 81, and a gap may be formed between the lower end of the substrate S and the clamp portion 81. If the lower end of the substrate S has a structure connected to the clamp portion 81, it is preferable that the lower end of the substrate S is supported by the clamp portion 81 when the mounting surface 21S is located at the first position P1. In addition, even if the substrate S is to be moved downward in the vertical direction due to its own weight, the lower end of the substrate S is connected to the clamp portion 81, so that it is difficult for the position of the substrate S to deviate downward.

[Role of the substrate holding mechanism]

The function of the substrate holding mechanism 20 will be described with reference to the fifteenth figure. In the fifteenth figure, for convenience of illustration, the platform 21 and the substrate S when the mounting surface 21S is located at the second position P2 are shown by two dotted lines, and the platform 21 and the substrate 21 when the mounting surface 21S is located at the first position P1. The substrate S is indicated by a solid line.

As shown in FIG. 15, when the substrate S is formed into a film, the changing portion 22 changes the position of the mounting surface 21S from the second position P2 in a state where the outer peripheral portion Sa of the substrate S is placed on the mounting surface 21S. Go to the first position P1. When the mounting surface 21S is located at the first position P1, the substrate S is standing in a substantially vertical direction, so the self-weight of the substrate S is applied to the lower end of the substrate S.

At this time, the lower end of the substrate S is mechanically held by the clamp portion 81 while being pressed against the mounting surface 21S by the clamp portion 81. Then, since the lower end surface of the substrate S is connected to the clamp portion 81, even if the mounting surface 21S is located at the first position P1, the lower end of the substrate S does not move downward in the vertical direction when the mounting surface 21S is located at the second position P2. . As a result, the position of the mounting surface 21S is changed, and the state where the position of the substrate S is changed with respect to the mounting surface 21S is suppressed.

When the mounting surface 21S is located at the second position P2, the lower end surface of the substrate S and the When a gap is formed between the clamp portions 81, when the position of the mounting surface 21S is changed from the second position P2 to the first position P1, the lower end of the substrate S moves downward in the vertical direction due to the body weight of the substrate S Case. However, since the movement of the substrate S in the vertical direction is stopped at the position where the lower end surface of the substrate S is connected to the clamp portion 81, the situation where the position of the substrate S with respect to the mounting surface 21S is greatly changed is suppressed.

As described above, according to the fourth embodiment, the effects described below can be obtained.

(8) Since the lower end of the substrate S with its own weight applied is mechanically held by the clamp portion 81, even if the substrate S moves downward in the vertical direction, the position where the substrate S is connected to the clamp portion 81 in the vertical direction Movement will stop. Therefore, since the holding force of static electricity on the mounting surface 21S and the mechanical holding force of the mounting surface 21S act on one substrate S, the situation in which the position of the substrate S with respect to the mounting surface 21S changes is suppressed.

The fourth embodiment described above may be implemented with appropriate changes as follows.

• Before forming the film on the substrate S, the changing unit 22 may hold the substrate 21 at the first position P1, and the adsorption unit 23 may once again adsorb the substrate S after the adsorption of the substrate S is temporarily released. Thus, for example, when the substrate S is adsorbed in a state where a gap is formed between the lower end surface of the substrate S and the clamp portion 81, the lower end surface of the substrate S can be brought into contact with the clamp portion by temporarily removing the adsorption of the substrate S by the adsorption portion 23. 81. Therefore, the position of the board | substrate S with respect to the mounting surface 21S can be matched with a specific position with the clamp part 81.

‧ As shown in FIG. 16, the suction portion 91 is a portion connected to the mounting surface 21S at the lower end of the substrate S other than the portion overlapping the clamp portion 81, and may have a structure that electrostatically suctions the substrate S. That is, the lower end of the outer peripheral portion Sa of the substrate S may be configured to be held on the mounting surface 21S by both the clamp portion 81 and the suction portion 91.

Then, the suction portion 91 may be arranged so that a portion other than the portion overlapping the clamp portion 81 is buried in the second side portion 21Sb of the mounting surface 21S at the lower end of the substrate S. According to this structure, when the mounting surface 21S is located at the first position P1, a part of the mounting surface 21S includes a portion of the clamp portion 81 and a portion of the suction portion 91 in the vertical direction. Therefore, compared with a structure in which a part of the lower end of the substrate S is supported only by the clamp portion 81, even if the position of the mounting surface 21S is changed, the position of the lower end of the substrate S relative to the mounting surface 21S is difficult to change.

The clamp portion 81 and the suction portion 91 may be arranged along the lower end of the substrate S. Even with such a structure, compared with a structure in which the lower end of the substrate S is supported only by the clamp portion 81, the position of the lower end of the substrate S relative to the mounting surface 21S is difficult to change as the position of the mounting surface 21S changes.

In such a configuration, before the film is formed on the substrate S, the changing section 22 may place the mounting surface 21S at the first position P1, and the adsorption sections 23 and 91 may temporarily release the adsorption of the substrate S, and then the substrate S may be adsorbed again. . Thereby, for example, when the substrate S is adsorbed in a state where a gap is formed between the lower end surface of the substrate S and the clamp portion 81, the lower end surface of the substrate S can be brought into contact with the clamp by temporarily removing the adsorption of the substrate S by the adsorption portion 23.部 81。 81. Therefore, the position of the board | substrate S with respect to the mounting surface 21S can be matched with a specific position with the clamp part 81.

Further, the substrate S may be adsorbed again only after the adsorption of the substrate S by the adsorption section 91 temporarily. In this way, in a structure in which the substrate S is adsorbed by the adsorption section 23 with the substrate S protruding from the mounting surface 21S, the substrate S being adsorbed by the adsorption section 91 is temporarily released, and the mounting on the mounting surface 21S can be performed without bending. Of the substrate S.

‧The substrate holding mechanism 20 may further include: an upper clamp portion that presses against the upper end of the substrate S toward the mounting surface 21S, or may further include: a side clamp portion (a right clamp portion or a left clamp portion) toward The mounting surface 221S is pressed against a side end (right end or left end) of the substrate S. Moreover, in the structure provided with the upper-end clamp part, the structure which juxtaposed an upper-end clamp part and a suction part along the upper end of the board | substrate S may be sufficient. In addition, the suction portion may have a structure in which the entirety of the portion (first side portion 21Sa) connected to the mounting surface 21S of the upper end of the substrate S other than the portion overlapping the upper clamp portion, electrostatically adsorbs the substrate S. Then, in the configuration including the side-end clamp section, a configuration in which the side-end clamp section and the suction section are juxtaposed along the side end of the substrate S may be used. In addition, the suction portion may be the entire portion (the second side portion 21Sc or the third side portion 21Sd) of the portion (the second side portion 21Sc or the third side portion 21Sd) connected to the mounting surface 21S at the side end of the substrate S other than the portion overlapping the side end clamp portion, and electrostatically adsorbs. Structure of the substrate S.

In addition, if the structure includes an upper clamp portion in addition to the clamp portion 81 described above, the clamp portion 81 and the upper clamp portion are an example of a second support portion, and if it is provided with a side in addition to the clamp portion 81 In the structure of the end clamp part, the clamp part 81 and the side end clamp part are an example of a 2nd support part.

• The substrate holding mechanism 20 may not include the clamp portion 81 in the fourth embodiment described above, and may have a structure including at least one of an upper clamp portion and a side clamp portion. Again, like this In the structure, at least one of the upper-end clamp portion and the side-end clamp portion is an example of the second support portion.

‧ The second supporting part is not limited to the structure in which the substrate S is sandwiched between the mounting surface 21S of the platform 21 by pressing against the substrate S on the mounting surface 21S, but may not be pressed against the substrate. From S to the mounting surface 21S, the structure of the edge of the substrate S is mechanically supported by being connected to the edge of the substrate S. Even with such a structure, by supporting the edge of the substrate S, the second support portion can suppress a situation where the position of the substrate S is changed along the facing surface 21 a of the stage 21. In addition, the second support portion is more preferably a portion provided with a condition where the edge of the substrate S is prevented from being separated from the mounting surface 21S.

Here, when a film is formed on the substrate S, by inputting heat to the substrate S, the edge of the substrate S may be thermally transformed to rise from the mounting surface 21S. As described above, if the second support portion includes a portion that suppresses the deformation from being separated from the mounting surface 21S, the rise of the edge of the substrate is suppressed.

A situation in which the structure including the second support portion is deviated from the substrate S of the substrate holding mechanism 20 as the posture of the substrate S is changed is suppressed by both the suction portion 23 and the second support portion.

‧The configurations of the fourth embodiment and the modification of the fourth embodiment may be the same as those of the first embodiment, the second embodiment, the second embodiment, the third embodiment, and the third embodiment. The configurations of the modified examples are appropriately combined and implemented.

Claims (16)

A substrate holding mechanism includes a holding portion having an outer peripheral portion on which a substrate is placed on a placement surface, holding the substrate on the placement surface, and changing between a first position and a second position different from the first position The position of the mounting surface; the holding portion includes an adsorption portion that electrostatically adsorbs the substrate on at least a portion of the mounting surface; the adsorption portion adsorbs the outer peripheral portion of the substrate at at least two places on the mounting surface; The substrate is received on the mounting surface when the mounting surface is at the second position, and a film is formed when the mounting surface is at the first position, and the adsorption unit is configured to be positioned on the second surface on the mounting surface. Position, the adsorption starts at one or all of at least two places on the mounting surface, and when the mounting surface is in the second position or the first position, at least two of the mounting surfaces The aforementioned adsorption is released in one place. The substrate holding mechanism according to item 1 of the patent application scope further includes: a temperature adjustment section that adjusts the temperature of the substrate; the mounting surface has a ring shape; and the temperature adjustment section is located inside the mounting surface. The substrate holding mechanism according to item 2 of the scope of patent application, wherein the temperature adjustment section is configured to be located inside the mounting surface and separated from the substrate. The substrate holding mechanism according to item 2 of the scope of patent application, wherein the temperature adjustment section is configured to be located inside the mounting surface and is connected to the substrate. The substrate holding mechanism according to item 3 of the scope of patent application, further comprising: a first support portion disposed inside the mounting surface to support the substrate. The substrate holding mechanism according to item 5 of the scope of patent application, wherein the first support portion includes: a front end portion connected to the substrate; and the front end portion includes: a support adsorption portion that electrostatically adsorbs the substrate. The substrate holding mechanism according to any one of claims 1 to 6, wherein the holding portion further includes a second support portion that mechanically supports an edge of the substrate. A film forming apparatus includes a film forming section that releases a film forming seed to a substrate, and a holding section having an outer peripheral portion on which a substrate is placed on a mounting surface, holding the substrate on the mounting surface, and facing the film forming portion. The position of the mounting surface is changed between a first position of the second position and a second position different from the first position. The holding portion includes: an adsorption portion that electrostatically adsorbs at least a portion of the substrate on the mounting surface. The suction section sucks the outer peripheral portion of the substrate at at least two positions on the mounting surface, and the substrate is received on the mounting surface when the mounting surface is at the second position, and when the mounting surface is at the first position When the film formation is performed, the adsorption section is configured to start the adsorption at one or all of at least two places of the mounting surface when the mounting surface is positioned at the second position, and the mounting surface is positioned at the second position. Or in the first position, the suction is released in at least one of at least two places on the mounting surface. A substrate holding method comprising: placing an outer peripheral portion of the substrate on a mounting surface whose position can be changed between a first position and a second position different from the first position; and electrostatically adsorbing the substrate on the mounting surface. At least a part of the mounting surface, wherein electrostatically adsorbing the substrate includes: adsorbing an outer peripheral portion of the substrate at at least two places on the mounting surface, and the substrate is received by the carrier when the mounting surface is located at the second position. Film formation is performed when the mounting surface is at the first position; electrostatically adsorbing the substrate includes: when the mounting surface is at the second position, starting at one or all of at least two places of the mounting surface; The adsorption; and when the mounting surface is located at the second position or the first position, the adsorption is released at least one of at least two positions of the mounting surface. The substrate holding method according to item 9 of the scope of patent application, wherein electrostatically adsorbing the substrate includes: starting adsorption of the outer peripheral portion of the substrate at one of at least two places on the mounting surface; and Until the state where the adsorption is performed, the adsorption is maintained at the adsorption start position, and the adsorption at the at least two places is sequentially started. The substrate holding method according to item 9 of the scope of the patent application, wherein electrostatically adsorbing the substrate includes: starting adsorption of the outer peripheral portion of the substrate on all of the at least two places on the mounting surface; and The aforementioned adsorption is released in at least one of the at least two places. The substrate holding method according to any one of claims 9 to 11, wherein electrostatically adsorbing the substrate includes: a state in which the adsorption is performed from all of at least two places on the mounting surface; The adsorption is released at least one of the places; and the adsorption is performed in the at least two places by restarting the adsorption at the place where the adsorption is released. The substrate holding method according to item 9 of the scope of patent application, wherein releasing the adsorption at at least one of the at least two places on the mounting surface includes: before the substrate is formed into a film, the substrate is formed into a film, and At least one of the substrates is formed into a film, and the adsorption is released at the first position on the mounting surface. The substrate holding method according to item 9 of the scope of patent application, wherein after the substrate is formed into a film and the mounting surface returns from the first position to the second position, the substrate is sequentially released from at least two positions on the mounting surface. Of the aforementioned adsorption. The substrate holding method according to item 12 of the scope of patent application, wherein releasing the adsorption at at least one of the at least two places on the mounting surface includes maintaining the aforementioned at least one of the at least two places on the mounting surface. Adsorption, and the adsorption is released in at least one of the remaining at least two places. The method for holding a substrate according to item 12 of the scope of patent application, wherein releasing the suction at at least one of at least two places on the mounting surface includes mechanically holding the substrate with a clamp section between the suction being released. Of the aforementioned peripheral portion.