JP6247995B2 - Joining method, program, computer storage medium, joining apparatus and joining system - Google Patents

Description

  The present invention relates to a bonding method, a program, a computer storage medium, a bonding apparatus for bonding substrates to each other through an adhesive, and a bonding system including the bonding apparatus.

  In recent years, for example, in semiconductor device manufacturing processes, semiconductor wafers (hereinafter referred to as “wafers”) have been increasing in diameter. Further, in any specific process of the mounted wafer W to be processed, wafer thinning is required. For example, if a thin wafer having a large diameter is transported or polished as it is, the wafer may be warped or cracked. For this reason, for example, in order to reinforce the wafer, the wafer is attached to a support substrate, for example.

  The bonding of the wafer and the support substrate is performed by interposing an adhesive between the wafer and the support substrate using, for example, a bonding system. The bonding system includes, for example, a coating device that applies an adhesive to a wafer or a support substrate, a heat treatment device that heats the wafer or the support substrate coated with the adhesive, and presses the wafer and the support substrate through the adhesive to bond them. And a joining device for And in this joining system, after apply | coating an adhesive agent to a wafer or a support substrate with a coating device and a heat processing apparatus and heating to predetermined temperature, the wafer and a support substrate are pressed and joined with a joining device (patent document) 1).

JP 2013-247292 A

  However, in the coating apparatus described in Patent Document 1 of the adhesive, the adhesive may not be applied to the wafer or the support substrate with a uniform film thickness. In particular, since the adhesive has a high viscosity, the film thickness of the adhesive tends to be uneven.

  Here, if the pressure at the time of pressing the wafer and the support substrate is large in the bonding apparatus, the adhesive is pushed out from the outer peripheral portion of the superposed substrate on which the wafer and the support substrate are bonded. In such a case, as described above, if the film thickness of the adhesive applied to the wafer or the support substrate is non-uniform, the protruding amount of the adhesive protruding from the outer peripheral portion of the polymerization substrate becomes non-uniform. In the part where the protruding amount of the adhesive is small, the outer periphery of the wafer is not properly protected by the adhesive. Therefore, when the wafer is thinned in the subsequent process, the outer periphery of the wafer may be damaged such as chipping or cracks. There is. On the other hand, in a portion where the protruding amount of the adhesive is large, the wafer cannot be thinned appropriately due to being hindered by the protruding adhesive in the subsequent process.

  Moreover, if the pressure at the time of pressing a wafer and a support substrate in a joining apparatus is small, the thickness of the superposition | polymerization board | substrate after joining will become uneven according to the adhesive agent with nonuniform film thickness. If it does so, a wafer cannot be thinned appropriately in the post process of a joining device.

  The present invention has been made in view of the above points, and when bonding substrates, appropriately controls the adhesive protruding from between the substrates, and improves the uniformity of the thickness of the bonded superposed substrates. With the goal.

  In order to achieve the above object, the present invention is a bonding method for bonding substrates to each other via an adhesive, and a disposing step of opposingly arranging the first substrate and the second substrate coated with the adhesive; Then, a contact step of pressing the first substrate and the second substrate with the first pressure to contact the adhesive and the second substrate, and then a second pressure smaller than the first pressure. The film thickness adjusting step of pressing the first substrate and the second substrate to adjust the film thickness of the adhesive, and then the first substrate and the second substrate at a third pressure larger than the first pressure. And a bonding step of pressing and bonding the substrates.

  According to the present invention, the first substrate and the second substrate are pressed with the first pressure in the contact step. The first pressure is smaller than the third pressure in the bonding step, and the adhesive and the second substrate come into contact with each other in the bonding step, but the first substrate and the second substrate cannot be bonded.

  Thereafter, in the film thickness adjusting step, the first substrate and the second substrate are pressed with a second pressure smaller than the first pressure. Then, the first substrate and the second substrate move relatively away from each other, and the interval between the first substrate and the second substrate is increased. Following the movement of the substrate, the adhesive stretches, and the film thickness of the adhesive is leveled within the substrate surface. That is, for example, even if the film thickness of the adhesive applied to the first substrate is non-uniform, the film thickness of the adhesive is adjusted uniformly in the film thickness adjusting step.

  Thereafter, in the bonding step, the first substrate and the second substrate are pressed and bonded with a third pressure larger than the first pressure. At this time, the adhesive protrudes from the outer peripheral portion of the superposed substrate where the first substrate and the second substrate are joined, but the adhesive film thickness is adjusted in the film thickness adjusting step so that the adhesive protrudes. The protruding amount of the agent can be uniformly controlled in the circumferential direction, and the protruding amount of the adhesive can be appropriately controlled. Therefore, when the first substrate is thinned in a subsequent process, the outer peripheral portion of the first substrate can be prevented from being damaged, and the first substrate can be appropriately thinned. Furthermore, the thickness of the superposition | polymerization board | substrate after joining can also be made uniform in a substrate surface.

  In the placement step, the contact step, the film thickness adjustment step, and the bonding step, the first substrate is held by a first holding unit, the second substrate is held by a second holding unit, The second holding part is moved to the first holding part side by allowing fluid to flow into and out of a vertically extendable pressure vessel provided to cover the second substrate held by the two holding parts. You may press.

  The abutting step, the film thickness adjusting step, and the joining step are performed in a state where the inside of the processing container that accommodates the first holding portion, the second holding portion, and the pressure vessel is maintained in a vacuum state. In the film thickness adjusting step, the pressure in the pressure vessel may be smaller than the pressure in the processing vessel.

  The first substrate may be a substrate to be processed, and the second substrate may be a support substrate that supports the substrate to be processed.

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the joining apparatus in order to cause the joining apparatus to execute the joining method.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  According to still another aspect, the present invention is a bonding apparatus for bonding substrates through an adhesive, the first holding unit holding the first substrate coated with the adhesive, and the first holding Held by the first holding unit, a second holding unit that holds the second substrate, a pressurizing mechanism that presses the first holding unit or the second holding unit, and the first holding unit. An arrangement step of arranging the first substrate and the second substrate held by the second holding unit opposite to each other, and thereafter, the first substrate and the second substrate are moved at a first pressure by the pressurizing mechanism. A contact step of pressing and bringing the adhesive into contact with the second substrate, and then pressing the first substrate and the second substrate with a second pressure smaller than the first pressure by the pressure mechanism. A film thickness adjusting step for adjusting the film thickness of the adhesive, and then a first pressure greater than the first pressure by the pressure mechanism. Control for controlling the first holding unit, the second holding unit, and the pressure mechanism so as to perform a bonding step of pressing and bonding the first substrate and the second substrate with a pressure of And a portion.

  The pressurizing mechanism includes a vertically extending pressure vessel provided so as to cover the second substrate held by the second holding portion, and allows fluid to flow into and out of the pressure vessel. You may press the said 2nd holding | maintenance part to the said 1st holding | maintenance part side.

  The bonding apparatus contains the first holding unit, the second holding unit and the pressure vessel inside, a processing vessel capable of sealing the inside, and a pressure reducing mechanism for reducing the atmosphere in the processing vessel, The control unit maintains the inside of the processing container in a vacuum state in the contact step, the film thickness adjusting step, and the joining step, and in the film thickness adjusting step, the pressure in the pressure vessel is maintained. The pressure mechanism and the pressure reducing mechanism may be controlled so that the pressure is lower than the pressure in the processing container.

  The first substrate may be a substrate to be processed, and the second substrate may be a support substrate that supports the substrate to be processed.

  According to another aspect of the present invention, there is provided a joining system including the joining device, the joining device, a coating device that applies an adhesive to a first substrate, and a first that is coated with the adhesive. The first substrate, the second substrate, or the first substrate and the second substrate are bonded to the heat treatment apparatus that heats the substrate to a predetermined temperature and the coating apparatus, the heat treatment apparatus, and the bonding apparatus. A processing area for transporting the superposed substrate, and a loading / unloading station for loading / unloading the first substrate, the second substrate or the superposed substrate to / from the processing station. It is characterized by being.

  According to the present invention, when bonding substrates together, the adhesive protruding from between the substrates can be controlled appropriately, and the uniformity of the thickness of the bonded superposed substrates can be improved.

It is a top view which shows the outline of a structure of the joining system concerning this Embodiment. It is a side view which shows the outline of the internal structure of the joining system concerning this Embodiment. It is a side view of a to-be-processed wafer and a support wafer. It is a cross-sectional view which shows the outline of a structure of a joining apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of a junction part. It is a longitudinal cross-sectional view which shows the outline of a structure of a junction part. It is a top view which shows the outline of a structure of a 2nd holding | maintenance part and its moving mechanism. It is a flowchart which shows the main processes of a joining process. It is explanatory drawing which shows a mode that the to-be-processed wafer and the support wafer were opposingly arranged. It is explanatory drawing which shows a mode that a to-be-processed wafer and a support wafer are made to contact. It is explanatory drawing which shows a mode that the to-be-processed wafer and the support wafer were made to contact. It is explanatory drawing which shows a mode that the film thickness of an adhesive agent is adjusted. It is explanatory drawing which shows a mode that a to-be-processed wafer and a support wafer are joined. It is explanatory drawing which shows the mode of the outer side adhesive agent protruded from the outer peripheral part of the superposition | polymerization wafer.

  Embodiments of the present invention will be described below. FIG. 1 is a plan view showing the outline of the configuration of the joining system 1 according to the present embodiment. FIG. 2 is a side view illustrating the outline of the internal configuration of the joining system 1.

In the bonding system 1, as shown in FIG. 3, for example, the processing target wafer W as the first substrate and the support wafer S as the second substrate are bonded via an adhesive G. Hereinafter, in the processing target wafer W, a surface bonded to the support wafer S via the adhesive G is referred to as a “bonding surface W _J ” as a surface, and a surface opposite to the bonding surface W _J is defined as a “back surface”. It is referred to as “non-bonding surface W _N ”. Similarly, in the support wafer S, a surface bonded to the processing target wafer W via the adhesive G is referred to as a “bonding surface S _J ” as a surface, and a surface opposite to the bonding surface S _J is defined as a “back surface”. It is referred to as “non-joint surface S _N ”. And in the joining system 1, the to-be-processed wafer W and the support wafer S are joined, and the superposition | polymerization wafer T as a superposition | polymerization board | substrate is formed. Note that wafer W is a wafer as a product, for example, joint surface W _J A plurality of electronic circuit is formed on the non-bonding surface W _N is polished. The support wafer S is a wafer having the same diameter as that of the wafer W to be processed and supporting the wafer W to be processed. Note that although a case where a wafer is used as the second substrate will be described in this embodiment mode, another substrate such as a glass substrate may be used.

As shown in FIG. 1, the bonding system 1 includes cassettes C _W , C _S , and C _T that can accommodate, for example, a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T, respectively. The loading / unloading station 2 for loading / unloading and the processing station 3 including various processing apparatuses for performing predetermined processing on the processing target wafer W, the supporting wafer S, and the overlapped wafer T are integrally connected. .

The loading / unloading station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the X direction (vertical direction in FIG. 1). These cassette mounting plates 11, cassettes _C W to the outside of the interface system _1, C S, when loading and unloading the _{C T,} a cassette _{C W,} C S, can be placed on _{C T} . Thus, the carry-in / out station 2 is configured to be capable of holding a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T. The number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined. One of the cassettes may be used for collecting defective wafers. That is, this is a cassette that can separate from a normal superposed wafer T a wafer in which a defect occurs in the joining of the processing target wafer W and the supporting wafer S due to various factors. In the present embodiment, among the plurality of cassettes C _T, using a one cassette C _T for the recovery of the fault wafer, and using the other cassette C _T for the accommodation of a normal bonded wafer T.

In the loading / unloading station 2, a wafer transfer unit 20 is provided adjacent to the cassette mounting table 10. The wafer transfer unit 20 is provided with a wafer transfer device 22 that is movable on a transfer path 21 extending in the X direction. The wafer transfer device 22 is also movable in the vertical direction and around the vertical axis (θ direction), and includes cassettes C _W , C _S , and C _T on each cassette mounting plate 11 and a third of the processing station 3 to be described later. The to-be-processed wafer W, the support wafer S, and the superposed wafer T can be transferred to and from the transition devices 50 and 51 of the processing block G3.

  The processing station 3 is provided with a plurality of, for example, three processing blocks G1, G2, and G3 including various processing apparatuses. For example, a first processing block G1 is provided on the front side of the processing station 3 (X direction negative direction side in FIG. 1), and on the back side of the processing station 3 (X direction positive direction side in FIG. 1). A second processing block G2 is provided. Further, a third processing block G3 is provided on the processing station 3 on the side of the loading / unloading station 2 (the Y direction negative direction side in FIG. 1).

  For example, in the first processing block G1, bonding devices 30 to 33 for pressing and bonding the processing target wafer W and the supporting wafer S via the adhesive G are provided in this order from the loading / unloading station 2 side in the Y direction. They are arranged side by side. The number and arrangement of the joining devices 30 to 33 can be arbitrarily set. Moreover, the structure of the joining apparatuses 30-33 is mentioned later.

  For example, in the second processing block G2, as shown in FIG. 2, the coating apparatus 40 that applies the adhesive G to the wafer W to be processed and the wafer W to which the adhesive G is applied are heated to a predetermined temperature. Heat treatment apparatuses 41 to 43 and similar heat treatment apparatuses 44 to 46 are arranged in this order in the direction toward the loading / unloading station 2 (the negative direction in the Y direction in FIG. 1). The heat treatment apparatuses 41 to 43 and the heat treatment apparatuses 44 to 46 are provided in three stages in this order from the bottom. The number of heat treatment apparatuses 41 to 46 and the arrangement in the vertical direction and the horizontal direction can be arbitrarily set.

  As the coating apparatus 40, for example, a coating apparatus described in JP2013-247292A can be used. That is, the coating apparatus 40 includes a spin chuck that holds and rotates the wafer W to be processed, and an adhesive nozzle that supplies the adhesive G onto the wafer W to be processed held by the spin chuck.

  As said heat processing apparatus 41-46, the heat processing apparatus of Unexamined-Japanese-Patent No. 2013-247292 can be used, for example. That is, the heat treatment apparatuses 41 to 46 include a heating unit that heat-processes the processing target wafer W and a temperature control unit that adjusts the temperature of the processing target wafer W. In the heat treatment apparatuses 41 to 46, the temperature of the superposed wafer T can also be adjusted. Further, in order to adjust the temperature of the superposed wafer T, a temperature adjusting device (not shown) may be provided in the second processing block G2. The temperature control device has the same configuration as the heat treatment devices 41 to 46 described above, and a temperature control plate is used instead of the hot plate. A cooling member such as a Peltier element is provided inside the temperature adjustment plate, and the temperature adjustment plate can be adjusted to a set temperature.

  For example, in the third processing block G3, transition devices 50 and 51 for the processing target wafer W, the supporting wafer S, and the overlapped wafer T are provided in two stages in this order from the bottom.

  As shown in FIG. 1, a wafer transfer region 60 is formed in a region surrounded by the first processing block G1 to the third processing block G3. For example, a wafer transfer device 61 is disposed in the wafer transfer region 60. Note that the pressure in the wafer transfer region 60 is equal to or higher than atmospheric pressure, and the wafer to be processed W, the support wafer S, and the superposed wafer T are transferred in a so-called atmospheric system in the wafer transfer region 60.

  The wafer transfer device 61 has, for example, a transfer arm that can move around the vertical direction, horizontal direction (Y direction, X direction), and vertical axis. The wafer transfer device 61 moves within the wafer transfer region 60, and moves to a predetermined device in the surrounding first processing block G1, second processing block G2, and third processing block G3. S and superposed wafer T can be conveyed.

  The above joining system 1 is provided with a controller 70 as shown in FIG. The control unit 70 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling processing of the processing target wafer W, the supporting wafer S, and the overlapped wafer T in the bonding system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize the below-described joining process in the joining system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 70 from the storage medium H.

  Next, the structure of the joining apparatuses 30 to 33 described above will be described. As shown in FIG. 4, the bonding apparatus 30 includes a processing container 100 that can seal the inside. A loading / unloading port 101 for the wafer W to be processed, the support wafer S, and the overlapped wafer T is formed on the side surface of the processing container 100 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port. Yes.

  The inside of the processing container 100 is partitioned by the inner wall 102 into a preprocessing region D1 and a joining region D2. The loading / unloading port 101 described above is formed on the side surface of the processing container 100 in the preprocessing region D1. In addition, a carry-in / out port 103 for the wafer W to be processed, the support wafer S, and the overlapped wafer T is also formed on the inner wall 102.

  In the pretreatment region D <b> 1, a delivery unit 110 for delivering the processing target wafer W, the support wafer S, and the overlapped wafer T to and from the outside of the bonding apparatus 30 is provided. The delivery unit 110 is disposed adjacent to the loading / unloading port 101. The delivery unit 110 is arranged in a plurality of, for example, two stages in the vertical direction, and can deliver any two of the processing target wafer W, the support wafer S, and the overlapped wafer T at the same time. For example, the processing target wafer W or the support wafer S before bonding may be delivered by one delivery unit 110, and the superposed wafer T after joining may be delivered by another delivery unit 110. Alternatively, the wafer W to be processed before bonding may be delivered by one delivery unit 110 and the support wafer S before joining may be delivered by another delivery unit 110.

  As the delivery unit 110, for example, a delivery unit described in JP2013-247292A can be used. That is, the delivery unit 110 includes a delivery arm 111 and wafer support pins 112. The delivery arm 111 can deliver the wafer W to be processed, the support wafer S, and the overlapped wafer T between the wafer transfer device 61 and the wafer support pins 112. The wafer support pins 112 are provided in a plurality of, for example, three locations, and can support the processing target wafer W, the supporting wafer S, and the superposed wafer T.

  On the Y direction negative direction side of the pretreatment region D1, that is, the loading / unloading port 103 side, a reversing unit 120 that reverses the front and back surfaces of the support wafer S, for example, is provided vertically above the delivery unit 110.

  As the reversing unit 120, for example, a reversing unit described in JP2013-247292A can be used. That is, the reversing unit 120 includes a holding arm 121 that holds the support wafer S and the wafer W to be processed. The holding arm 121 extends in the horizontal direction (X direction in FIG. 4). The holding arm 121 is provided with holding members 122 that hold the support wafer S and the wafer W to be processed, for example, at four locations. The holding arm 121 is supported by a driving unit 123 including, for example, a motor. By this drive unit 123, the holding arm 121 is rotatable around the horizontal axis and can move in the horizontal direction (X direction and Y direction in FIG. 4). Further, the holding arm 121 can be moved in the vertical direction along the support pillar 124 extending in the vertical direction by the driving unit 123.

  A position adjusting mechanism 125 that adjusts the horizontal direction of the support wafer S and the wafer W to be processed held by the holding member 122 is supported by the support pillar 124 via a support plate 126. The position adjustment mechanism 125 includes a base 127 and a detection unit 128 that detects the positions of the notches of the support wafer S and the wafer W to be processed. The position adjustment mechanism 125 detects the positions of the notch portions of the support wafer S and the wafer W to be processed by the detection unit 128 while moving the support wafer S and the wafer W to be processed held in the holding member 122 in the horizontal direction. Thus, the horizontal orientation of the support wafer S and the wafer W to be processed is adjusted by adjusting the position of the notch portion.

  The delivery unit 110 configured as described above is arranged in two stages in the vertical direction, and the reversing unit 120 is arranged vertically above the delivery unit 110. That is, the delivery arm 111 of the delivery unit 110 moves in the horizontal direction below the holding arm 121 and the position adjustment mechanism 125 of the reversing unit 120. Further, the wafer support pins 112 of the delivery unit 110 are disposed below the holding arms 121 of the reversing unit 120.

  On the Y direction positive direction side of the bonding region D2, a transfer unit 130 for transferring the wafer W to be processed, the support wafer S, and the overlapped wafer T to the delivery unit 110, the reversing unit 120, and the bonding unit 140 described later is provided. ing. The conveyance unit 130 is attached to the loading / unloading port 103.

As the conveyance unit 130, for example, a conveyance unit described in JP2013-247292A can be used. That is, the transport unit 130 includes a plurality of, for example, two transport arms 131. The two transfer arms 131 are arranged in two stages in this order from the bottom in the vertical direction. The back surfaces of the wafer W to be processed, the support wafer S, and the superposed wafer T (the wafer W to be processed and the support wafer S are not bonded). A transfer arm that holds and transfers the surfaces W _N and S _N ) and a transfer arm that holds and transfers the surface of the support wafer S, that is, the outer peripheral portion of the bonding surface S _J. For example, an arm driving unit 132 including a motor is provided at the base end of the transfer arm 131. Each arm 131 can move in the horizontal direction independently by the arm driving unit 132. The transfer arm 131 and the arm driving unit 132 are supported by the base 133.

  On the negative side in the Y direction of the bonding region D2, a bonding portion 140 that presses and bonds the processing target wafer W and the support wafer S via the adhesive G is provided.

  As shown in FIG. 5, the bonding unit 140 includes a first holding unit 200 that holds and holds the processing target wafer W on the upper surface, and a second holding unit 201 that holds the supporting wafer S on the lower surface by suction. doing. The first holding unit 200 is provided below the second holding unit 201 and is disposed so as to face the second holding unit 201. That is, the wafer W to be processed held by the first holding unit 200 and the support wafer S held by the second holding unit 201 are arranged to face each other.

  For the first holding unit 200, for example, an electrostatic chuck for electrostatically attracting the wafer W to be processed is used. The first holding unit 200 is made of ceramic such as aluminum nitride ceramic having thermal conductivity. Further, for example, a DC high-voltage power supply 210 is connected to the first holding unit 200. Then, an electrostatic force can be generated on the surface of the first holding unit 200, and the wafer W to be processed can be electrostatically adsorbed on the first holding unit 200. The material of the first holding unit 200 is not limited to the present embodiment, and other ceramics such as silicon carbide ceramic and alumina ceramic may be used, for example, insulating on the surface of the first holding unit 200. When forming a layer, you may use metal materials, such as aluminum and stainless steel other than a ceramic, for example.

  A first heating mechanism 211 that heats the wafer W to be processed is provided inside the first holding unit 200. For the first heating mechanism 211, for example, a heater is used. The heating temperature of the wafer W to be processed by the first heating mechanism 211 is controlled by the control unit 70, for example.

  In addition, a heat insulating plate 212 is provided on the lower surface side of the first holding unit 200. The heat insulating plate 212 prevents heat generated when the processing target wafer W is heated by the first heating mechanism 211 from being transmitted to the lower chamber 281 side described later. For example, silicon nitride is used for the heat insulating plate 212.

  Below the first holding part 200, for example, three raising / lowering pins 220 are provided for supporting and raising / lowering the wafer W or the overlapped wafer T from below. The elevating pin 220 can be moved up and down by the elevating drive unit 221. The elevating drive unit 221 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. Further, in the vicinity of the central portion of the first holding unit 200, through holes 222 penetrating the first holding unit 200 and the lower chamber 281 in the thickness direction are formed at, for example, three locations. The elevating pin 220 is inserted through the through hole 222 and can protrude from the upper surface of the first holding unit 200. In addition, the raising / lowering drive part 221 is provided in the lower part of the lower chamber 281 mentioned later. The elevating drive unit 221 is provided on the support member 230.

  For the second holding unit 201, for example, an electrostatic chuck for electrostatically attracting the support wafer S is used. The second holding unit 201 is made of ceramic such as aluminum nitride ceramic having thermal conductivity. In addition, for example, a DC high-voltage power supply 240 is connected to the second holding unit 201. Then, an electrostatic force is generated on the surface of the second holding unit 201, and the support wafer S can be electrostatically adsorbed on the second holding unit 201. The material of the second holding unit 201 is not limited to the present embodiment, and other ceramics such as silicon carbide ceramic and alumina ceramic may be used, for example, insulating on the surface of the second holding unit 201. When forming a layer, you may use metal materials, such as aluminum and stainless steel other than a ceramic, for example.

  A second heating mechanism 241 for heating the support wafer S is provided inside the second holding unit 201. For example, a heater is used for the second heating mechanism 241. For example, a heater is used for the second heating mechanism 241. The heating temperature of the support wafer S by the second heating mechanism 241 is controlled by the control unit 70, for example.

  In addition, a heat insulating plate 242 is provided on the upper surface side of the second holding unit 201. The heat insulating plate 242 prevents heat generated when the support wafer S is heated by the second heating mechanism 241 from being transmitted to the support plate 250 side described later. For example, silicon nitride is used for the heat insulating plate 242.

  On the upper surface side of the second holding unit 201, a pressurizing mechanism 260 that presses the second holding unit 201 vertically downward is provided via a support plate 250. The pressurizing mechanism 260 includes a pressure vessel 261 provided so as to cover the processing target wafer W and the support wafer S, a fluid supply pipe 262 for supplying a fluid, for example, compressed air, to the inside of the pressure vessel 261, and a fluid for the inside. A fluid supply source 263 has a fluid for storing and supplying a fluid to the fluid supply pipe 262.

  The members on the upper surface side of these second holding portions 201 are supported by an air cylinder (not shown) provided above the support plate 250. Then, parallel adjustment of the upper chamber 282 and adjustment of the gap between the second holding unit 201 and the first holding unit 200 are performed by an adjustment bolt (not shown) provided above the support plate 250.

  The pressure vessel 261 is configured by, for example, a stainless steel bellows that is extendable in the vertical direction. The pressure vessel 261 has a lower surface fixed to the upper surface of the support plate 250 and an upper surface fixed to the lower surface of the support plate 264 provided above the second holding unit 201. The fluid supply pipe 262 has one end connected to the pressure vessel 261 and the other end connected to the fluid supply source 263. Then, by supplying fluid from the fluid supply pipe 262 to the pressure vessel 261, the pressure vessel 261 extends. At this time, since the upper surface of the pressure vessel 261 and the lower surface of the support plate 264 are in contact with each other, the pressure vessel 261 extends only in the downward direction, and the second holding portion 201 provided on the lower surface of the pressure vessel 261 is moved downward. Can be pressed. And since the pressure vessel 261 has elasticity, even if the parallelism of the 2nd holding | maintenance part 201 and the parallelism of the 1st holding | maintenance part 200 have arisen, the pressure vessel 261 can absorb the difference. At this time, the inside of the pressure vessel 261 is pressurized by the fluid and can be pressed uniformly. Furthermore, the planar shape of the pressure vessel 261 is the same as the planar shape of the wafer to be processed W and the support wafer S, and the diameter of the pressure vessel 261 is the same as the diameter of the wafer to be processed W, for example, 300 mm. Does not occur. Therefore, regardless of the parallelism of the first holding unit 200 and the second holding unit 201, the pressure vessel 261 presses the second holding unit 201 (the processing target wafer W and the support wafer S) uniformly in the surface. Can do. Adjustment of the pressure when pressing the second holding unit 201 is performed by adjusting the pressure of the compressed air supplied to the pressure vessel 261. Note that the support plate 264 is preferably formed of a member having a strength that does not deform even when a reaction force of a load applied to the second holding unit 201 is received by the pressure mechanism 260.

  Between the 1st holding | maintenance part 200 and the 2nd holding | maintenance part 201, the 1st imaging part 270 which images the surface of the to-be-processed wafer W hold | maintained at the 1st holding | maintenance part 200, and 2nd holding | maintenance A second imaging unit 271 that images the surface of the support wafer S held by the unit 201 is provided. For example, a wide-angle CCD camera is used for each of the first imaging unit 270 and the second imaging unit 271. Further, the first imaging unit 270 and the second imaging unit 271 are configured to be movable in the vertical direction and the horizontal direction by a moving mechanism (not shown).

  The joint 140 has a processing container 280 that can seal the inside. The processing container 280 accommodates the first holding unit 200, the second holding unit 201, the support plate 250, the pressure vessel 261, the support plate 264, the first imaging unit 270, and the second imaging unit 271 described above. To do.

  The processing container 280 includes a lower chamber 281 that supports the first holding unit 200 and an upper chamber 282 that supports the second holding unit 201. The upper chamber 282 is configured to be vertically movable by an elevating mechanism (not shown) such as an air cylinder. A sealing material 283 for maintaining the airtightness of the inside of the processing container 280 is provided on the joint surface of the lower chamber 281 with the upper chamber 282. For the sealing material 283, for example, an O-ring is used. Then, as shown in FIG. 6, the lower chamber 281 and the upper chamber 282 are brought into contact with each other, whereby the inside of the processing container 280 is formed in a sealed space.

  Around the upper chamber 282, as shown in FIG. 7, a plurality of, for example, five moving mechanisms 290 for moving the second holding unit 201 in the horizontal direction via the upper chamber 282 are provided. Of the five moving mechanisms 290, four moving mechanisms 290 are used for moving the second holding unit 201 in the horizontal direction, and one moving mechanism 290 is around the vertical axis (θ direction) of the second holding unit 201. Used for rotation. As shown in FIG. 5, the moving mechanism 290 has a cam 291 that contacts the upper chamber 282 to move the second holding unit 201 and a cam 291 that rotates the cam 291 via the shaft 292, for example, a motor (not shown). And a built-in rotation drive unit 293. The cam 291 is provided eccentrically with respect to the central axis of the shaft 292. Then, by rotating the cam 291 by the rotation driving unit 293, the center position of the cam 291 with respect to the second holding unit 201 moves, and the second holding unit 201 can be moved in the horizontal direction.

  The lower chamber 281 is provided with a decompression mechanism 300 that decompresses the atmosphere in the processing container 280. The decompression mechanism 300 includes an intake pipe 301 for sucking the atmosphere in the processing container 280 and a negative pressure generator 302 such as a vacuum pump connected to the intake pipe 301.

  In addition, since the structure of the joining apparatuses 31-33 is the same as that of the structure of the joining apparatus 30 mentioned above, description is abbreviate | omitted. Moreover, the operation | movement of each part in the joining apparatuses 30-33 is controlled by the control part 70 mentioned above.

  Next, a method for joining the processing target wafer W and the supporting wafer S performed using the joining system 1 configured as described above will be described. FIG. 8 is a flowchart showing an example of main steps of the joining process.

First, a cassette C _W housing a plurality of the processed the wafer _W, the cassette C _S accommodating a plurality of support wafer _S, and an empty cassette C _T is a predetermined cassette mounting plate 11 of the carry-out station 2 Placed. Thereafter, the wafer _W to be processed in the cassette CW is taken out by the wafer transfer device 22 and transferred to the transition device 50 of the third processing block G3 of the processing station 3. At this time, the wafer W to be processed is transported with its non-bonding surface W _N facing downward.

Next, the wafer W to be processed is transferred to the coating device 40 by the wafer transfer device 61. The wafer W to be processed loaded into the coating device 40 is transferred from the wafer transfer device 61 to the spin chuck and is sucked and held. At this time, the non-bonding surface W _N of the wafer W is held by suction. Then, while rotating the wafer W by the spin chuck, for supplying the adhesive G from the adhesive nozzle joint surface W _J of wafer W. Supplied adhesive G is diffused into the entire surface of the bonding surface W _J of wafer W by the centrifugal force, the adhesive G on the bonding surface W _J of the wafer W is applied (step in FIG. 8 A1 ).

  Next, the wafer W to be processed is transferred to the heat treatment apparatus 41 by the wafer transfer apparatus 61. In the heat treatment apparatus 41, first, the processing target wafer W is heated to a predetermined temperature, for example, 100 ° C. to 300 ° C. by the heating unit (step A2 in FIG. 8). By performing such heating, the adhesive G on the processing target wafer W is heated and the adhesive G is cured. Thereafter, the temperature adjustment unit adjusts the temperature of the processing target wafer W to a predetermined temperature, for example, 23 ° C. which is normal temperature.

  Next, the wafer W to be processed is transferred to the bonding apparatus 30 by the wafer transfer device 61. The wafer W to be processed transferred to the bonding apparatus 30 is transferred from the wafer transfer apparatus 61 to the transfer arm 111 of the transfer unit 110 and then transferred from the transfer arm 111 to the wafer support pins 112. Thereafter, the wafer W to be processed is transferred from the wafer support pins 112 to the reversing unit 120 by the transfer arm 131 of the transfer unit 130.

  The wafer W to be processed transferred to the reversing unit 120 is held by the holding member 122 and moved to the position adjusting mechanism 125. Then, the position adjustment mechanism 125 adjusts the position of the notch portion of the wafer to be processed W to adjust the horizontal direction of the wafer to be processed W (step A3 in FIG. 8).

Thereafter, the wafer W to be processed is transferred from the reversing unit 120 to the bonding unit 140 by the transfer arm 131 of the transfer unit 130. At this time, the upper chamber 282 is located above the lower chamber 281, the upper chamber 282 and the lower chamber 281 are not in contact with each other, and the inside of the processing container 280 is not formed in a sealed space. The to-be-processed wafer W conveyed by the junction part 140 is mounted in the 1st holding | maintenance part 200 (process A4 of FIG. 8). On the first holding portion 200, a state where the bonding surface W _J of wafer W is facing upward, i.e. wafer W in a state where the adhesive G is facing upward is held by suction.

  While the processes A1 to A4 described above are performed on the processing target wafer W, the supporting wafer S is processed following the processing target wafer W. The support wafer S is transferred to the bonding apparatus 30 by the wafer transfer device 61. In addition, about the process in which the support wafer S is conveyed to the joining apparatus 30, since it is the same as that of the said embodiment, description is abbreviate | omitted.

  The support wafer S transferred to the bonding apparatus 30 is transferred from the wafer transfer apparatus 61 to the transfer arm 111 of the transfer unit 110 and then transferred from the transfer arm 111 to the wafer support pins 112. Thereafter, the support wafer S is transferred from the wafer support pins 112 to the reversing unit 120 by the transfer arm 131 of the transfer unit 130.

The support wafer S transferred to the reversing unit 120 is held by the holding member 122 and moved to the position adjusting mechanism 125. Then, the position adjustment mechanism 125 adjusts the position of the notch portion of the support wafer S to adjust the horizontal direction of the support wafer S (step A5 in FIG. 8). The support wafer S whose horizontal direction is adjusted is moved in the horizontal direction from the position adjustment mechanism 125 and moved upward in the vertical direction, and then the front and back surfaces thereof are reversed (step A6 in FIG. 8). That is, the bonding surface S _J of the support wafer S is directed downward.

Thereafter, the support wafer S is moved downward in the vertical direction, and is then transferred from the reversing unit 120 to the bonding unit 140 by the transfer arm 131 of the transfer unit 130. At this time, the transfer arm 131, so holds only the outer peripheral portion of the joint surface S _J of the support wafer S, for example, will not be joining surface S _J is soiled by particles or the like adhering to the transfer arm 131. The support wafer S transferred to the bonding unit 140 is sucked and held by the second holding unit 201 (step A7 in FIG. 8). In the second holding portion 201, the supporting wafer S is held in a state where the bonding surfaces S _J is directed downward of the support wafer S.

  In the bonding unit 140, first, horizontal position adjustment between the processing target wafer W held by the first holding unit 200 and the support wafer S held by the second holding unit 201 is performed. A plurality of predetermined reference points, for example, four or more reference points, are formed on the surface of the wafer W to be processed and the surface of the support wafer S. Then, the first imaging unit 270 is moved in the horizontal direction, and the surface of the processing target wafer W is imaged. Further, the second imaging unit 271 is moved in the horizontal direction, and the surface of the support wafer S is imaged. Thereafter, the position of the reference point of the processing target wafer W displayed in the image captured by the first imaging unit 270 and the position of the reference point of the support wafer S displayed in the image captured by the second imaging unit 271 The horizontal position (including the horizontal direction) of the support wafer S is adjusted by the moving mechanism 290 so that the two match. In other words, the cam 291 is rotated by the rotation driving unit 293 to move the second holding unit 201 in the horizontal direction via the upper chamber 282, and the horizontal position of the support wafer S is adjusted. In this way, the horizontal positions of the wafer to be processed W and the support wafer S are adjusted, and the wafer to be processed W and the support wafer S are arranged to face each other (step A8 in FIG. 8).

Thereafter, after the first imaging unit 270 and the second imaging unit 271 are withdrawn from between the first holding unit 200 and the second holding unit 201, the upper chamber 282 is moved by a moving mechanism (not shown). Lower. Then, as shown in FIG. 6, the upper chamber 282 and the lower chamber 281 are brought into contact with each other, and the inside of the processing container 280 constituted by the upper chamber 282 and the lower chamber 281 is formed in a sealed space. At this time, as shown in FIG. 9, a minute gap is formed between the wafer W to be processed held by the first holding unit 200 and the support wafer S held by the second holding unit 201. Yes. That is, the wafer W to be processed and the support wafer S are not in contact with each other. Further, in the present embodiment, the adhesive G in step A1 has not been uniformly applied to the bonding surface W _J of the processing the wafer W, the film thickness of the adhesive G is not uniform within the wafer plane.

  Thereafter, the atmosphere in the processing container 280 is sucked by the decompression mechanism 300, and the pressure in the processing container 280 is reduced to a vacuum state (step A9 in FIG. 8). In the present embodiment, the inside of the processing container 280 is depressurized to a predetermined vacuum pressure, for example, 10 Pa or less.

  Then, as shown in FIG. 10, compressed air is supplied to the pressure vessel 261, and the inside of the pressure vessel 261 is set to a predetermined pressure, for example, 100 Pa to 200 Pa. Here, the pressure in the pressure vessel 261 is larger than the pressure in the processing vessel 280, and the pressure vessel 261 is disposed in a vacuum atmosphere in the processing vessel 280. For this reason, the pressure pressed downward by the pressurizing mechanism 260, that is, the pressure transmitted from the pressure vessel 261 to the second holding unit 201 is a differential pressure between the pressure in the pressure vessel 261 and the pressure in the processing vessel 280. (First pressure). Then, as shown in FIG. 11, the second holding unit 201 is pressed downward by the pressurizing mechanism 260, that is, the processing target wafer W and the supporting wafer S are pressed by the first pressure, and the adhesive G and the supporting wafer S are pressed. Abut on the entire surface (step A10 in FIG. 8). At this time, since the pressure vessel 261 has flexibility, the second holding unit 201 and the support wafer S are inclined following the uneven film thickness distribution of the adhesive G on the wafer W to be processed. In Step A10, the adhesive G and the support wafer S are merely in contact with each other, and the wafer W to be processed and the support wafer S are not joined.

  Thereafter, in a state where the inside of the processing vessel 280 is maintained at a predetermined vacuum pressure, the compressed air in the pressure vessel 261 is exhausted, and the inside of the pressure vessel 261 is reduced to a predetermined pressure. At this time, the pressure at which the wafer to be processed W and the support wafer S are pressed becomes a second pressure smaller than the first pressure. Then, as shown in FIG. 12, the second holding unit 201 and the support wafer S rise, and the interval between the support wafer S and the wafer W to be processed is widened. Moreover, since the pressure vessel 261 has flexibility, the second holding unit 201 and the support wafer S are horizontal. At this time, the distance for raising the support wafer S is a distance at which the adhesive G does not peel from the support wafer S, and is set to a distance within 50% of the target film thickness of the adhesive G, for example. Then, the adhesive G is stretched following the movement of the support wafer S, and the film thickness of the adhesive G is leveled within the wafer surface. That is, even if the thickness of the adhesive G applied to the wafer W to be processed in step A1 is not uniform, the thickness of the adhesive G is adjusted uniformly (step A11 in FIG. 8).

  In step A11, the pressure in the pressure vessel 261 may be lower than the pressure in the processing vessel 280. In such a case, since the pressure in the pressure vessel 261 becomes a negative pressure, the pressure vessel 261 can be contracted upward, and the second holding unit 201 and the support wafer S can be reliably raised. Therefore, the film thickness of the adhesive G can be adjusted more uniformly.

Thereafter, with the inside of the processing vessel 280 maintained at a predetermined vacuum pressure, compressed air is supplied again to the pressure vessel 261, and the inside of the pressure vessel 261 is set to a predetermined pressure, for example, 10 kPa to 1 MPa. At this time, the pressure at which the wafer to be processed W and the support wafer S are pressed becomes a third pressure that is higher than the first pressure. Then, as shown in FIG. 13, the second holding unit 201 is pressed downward, that is, the processing target wafer W and the support wafer S are pressed by the third pressure, and the adhesive G and the support wafer S are joined (FIG. 13). Step A12). The third pressure is set according to the type of adhesive G, the type of device on the processing target wafer W, and the like. Specifically, the thickness of the adhesive G is to target film thickness, and so that a predetermined amount of protrusion amount of protrusion of the outer adhesive G _E as described later, the third pressure is set.

In this step A12, when the wafer to be processed W and the support wafer S are pressed, the adhesive G is pushed out from between the wafer to be processed W and the support wafer S as shown in FIG. The outer adhesive G _E protruding from the outer peripheral portion of the bonded wafer T is formed.

Here, after the bonding process is completed in the bonding system 1, the wafer W to be processed is thinned. When wafer W is thinned, and the position is smaller than the end of the wafer W after thinning the outer adhesive G _E (one-dot chain line in FIG. 8), the processed wafer by the outer adhesive G _E Since the outer peripheral portion of W is not properly protected, the outer peripheral portion of the processing target wafer W may be damaged such as chipping and cracks. On the other hand, an end portion of the wafer W after thinning the outer adhesive G _E properly thinned and position greater than (one-dot chain line in FIG. 8), the wafer W is disturbed outside adhesive G _E Can not do it.

In this embodiment, since the thickness of the adhesive G in step A11 is adjusted uniformly, the amount of protrusion of the outer adhesive G _E can be uniformly controlled in the circumferential direction of the bonded wafer T in step A12. By setting the third pressure in step A12 appropriately, it is possible to properly control the amount of projection of the outer adhesive G _E. That is, the amount of protrusion of the outer adhesive G _E, to the position of the lower end portion of the outer adhesive G _E after removal of the surface, the projecting amount of the position of the end portion of the wafer W coincides after thinning Can do.

  In steps A9 to A12, since the inside of the processing container 280 is maintained in a vacuum state, even if the wafer to be processed W and the support wafer S are brought into contact with each other, the space between the wafer to be processed W and the support wafer S is between Generation of voids can be suppressed. Moreover, in process A9-A12, the to-be-processed wafer W and the support wafer S are heated by predetermined | prescribed temperature, for example, 100 degreeC-400 degreeC with the heating mechanisms 211,241. In this way, by pressing the second holding unit 201 with a predetermined pressure by the pressurizing mechanism 260 while heating the wafer to be processed W and the support wafer S at a predetermined temperature, the wafer to be processed W and the support wafer S are brought into contact with each other. Bonded and bonded more firmly.

  The overlapped wafer T in which the wafer to be processed W and the support wafer S are bonded in this way is transferred from the bonding unit 140 to the delivery unit 110 by the transfer arm 131 of the transfer unit 130. The overlapped wafer T transferred to the transfer unit 110 is transferred to the transfer arm 111 via the wafer support pins 112, and further transferred from the transfer arm 111 to the wafer transfer device 61.

Thereafter bonded wafer T is transferred to the transition unit 51 by the wafer transfer apparatus 61, as by the wafer transfer apparatus 22 of the subsequent unloading station 2 is transported to the cassette C _T of predetermined cassette mounting plate 11. In this way, a series of bonding processing of the processing target wafer W and the supporting wafer S is completed.

According to the above-described embodiment, the wafer W to be processed and the support wafer S are pressed with the first pressure in the step A10, the adhesive G and the support wafer S are brought into contact with each other, and then the second pressure in the step A11. The wafer W and the support wafer S are pressed to adjust the film thickness of the adhesive G to be uniform within the wafer surface. Then, when joining by pressing the support wafer S and wafer W in the third pressure in step A12, the circumferential direction of the protruding amount of bonded wafer T of the outer adhesive G _E protruding from the outer peripheral portion of the bonded wafer T uniformly be controlled, also it is possible to properly control the amount of projection of the outer adhesive G _E. Therefore, when the wafer to be processed W is thinned in a subsequent process, it is possible to prevent the outer peripheral portion of the wafer to be processed W from being damaged, and the wafer to be processed W can be appropriately thinned. Furthermore, the thickness of the superposed wafer T after bonding can be made uniform in the wafer plane.

  In addition, since the pressure vessel 261 of the pressurizing mechanism 260 can be expanded and contracted in the vertical direction and has flexibility, even if the second holding unit 201 and the support wafer S are inclined in the step A10, the second holding unit in the step A11. 201 and the support wafer S can be made horizontal. Therefore, the film thickness of the adhesive G in step A11 can be adjusted more appropriately with a simple apparatus configuration.

  In addition, since the bonding system 1 includes the bonding devices 30 to 33, the coating device 40, and the heat treatment devices 41 to 46, the processing target wafers W are sequentially processed and the adhesive G is applied to the processing target wafers W. While heating to predetermined temperature, in the joining apparatus 30, the front and back of the support wafer S are reversed. Thereafter, in the bonding apparatus 30, the wafer W to be processed which has been applied with the adhesive G and heated to a predetermined temperature is bonded to the support wafer S whose front and back surfaces are reversed. As described above, according to the present embodiment, the processing target wafer W and the supporting wafer S can be processed in parallel. In addition, while the wafer to be processed W and the support wafer S are bonded in the bonding apparatus 30, another wafer to be processed W and the support wafer S can be processed in the coating apparatus 40, the heat treatment apparatus 41, and the bonding apparatus 30. Therefore, the wafer W to be processed and the support wafer S can be bonded efficiently, and the throughput of the bonding process can be improved.

  In the above embodiment, in order to uniformly adjust the film thickness of the adhesive G in step A11, step A10 and step A11 may be repeated.

  In the above embodiment, the pressurizing mechanism 260 has the pressure vessel 261, but the configuration of the pressurizing mechanism is not limited to this. For example, the pressurizing mechanism 260 may have a hard pressing member (not shown). In short, the pressurization mechanism 260 only needs to be able to control the pressures for pressing the wafer W to be processed and the support wafer S to the first pressure, the second pressure, and the third pressure in steps A10, A11, and A12, respectively.

  In the present embodiment described above, the second holding unit 201 and the support wafer S are leveled due to the flexibility of the pressure vessel 261 in step A11. However, for example, using a horizontal mechanism (not shown) The second holding unit 201 and the support wafer S may be horizontal.

  In the above embodiment, the pressurizing mechanism 260 presses the second holding unit 201, but the first holding unit 200 may be pressed, or the second holding unit 201 and the first holding unit 201 may be pressed. You may press both the holding | maintenance parts 200. FIG.

In the above-described embodiment, the wafer to be processed W and the support wafer S are bonded in a state where the wafer to be processed W is disposed on the lower side and the support wafer S is disposed on the upper side. The support wafer S may be disposed upside down. At this time, the first holding unit 200 may support the supporting wafer S, and the second holding unit 201 may support the processing target wafer W. Then, a step A1~A4 described above relative to the support wafer S, applying an adhesive agent G on the bonding surface S _J of the support wafer S. Further, the above-described steps A5 to A7 are performed on the processing target wafer W, and the front and back surfaces of the processing target wafer W are reversed. And the process A8-A11 mentioned above is performed, and the to-be-processed wafer W and the support wafer S are joined.

In the above embodiment, the adhesive has been applied onto G on the bonding surface W _J of the processing the wafer W, the adhesive G may be applied to the bonding surface S _J of the support wafer S, or be processed the adhesive G on both the bonding surfaces S _J of the joint surface W _J and support wafer S of the wafer W may be subjected coated.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

DESCRIPTION OF SYMBOLS 1 Bonding system 2 Carrying in / out station 3 Processing station 30-33 Bonding apparatus 40 Coating apparatus 41-46 Heat processing apparatus 60 Wafer conveyance area 70 Control part 140 Bonding part 200 1st holding | maintenance part 201 2nd holding | maintenance part 260 Pressure mechanism 261 Pressure vessel 262 Fluid supply pipe 263 Fluid supply source 280 Processing vessel 300 Depressurization mechanism G Adhesive S Support wafer T Superposition wafer W Processed wafer

Claims (11)

A bonding method for bonding substrates through an adhesive,
An arrangement step of opposingly arranging the first substrate and the second substrate to which the adhesive is applied;
Then, a contact step of pressing the first substrate and the second substrate with a first pressure to contact the adhesive and the second substrate;
Then, a film thickness adjusting step of adjusting the film thickness of the adhesive by pressing the first substrate and the second substrate with a second pressure smaller than the first pressure,
And a bonding step of pressing and bonding the first substrate and the second substrate with a third pressure larger than the first pressure. In the placement step, the contact step, the film thickness adjustment step, and the bonding step, the first substrate is held by a first holding unit, the second substrate is held by a second holding unit, The second holding part is moved to the first holding part side by allowing fluid to flow into and out of a vertically extendable pressure vessel provided to cover the second substrate held by the two holding parts. The bonding method according to claim 1, wherein the bonding method is performed. The abutting step, the film thickness adjusting step, and the joining step are performed in a state where the inside of the processing container that accommodates the first holding portion, the second holding portion, and the pressure vessel is maintained in a vacuum state. I,
The bonding method according to claim 2, wherein in the film thickness adjusting step, the pressure in the pressure vessel is smaller than the pressure in the processing vessel. The first substrate is a substrate to be processed;
The bonding method according to claim 1, wherein the second substrate is a support substrate that supports a substrate to be processed. The program which operate | moves on the computer of the control part which controls the said joining apparatus so that the joining method as described in any one of Claims 1-4 may be performed with a joining apparatus. A readable computer storage medium storing the program according to claim 5. A joining device for joining substrates through an adhesive,
A first holding unit for holding a first substrate coated with an adhesive;
A second holding unit disposed opposite to the first holding unit and holding a second substrate;
A pressurizing mechanism for pressing the first holding unit or the second holding unit;
An arranging step of opposingly arranging the first substrate held by the first holding unit and the second substrate held by the second holding unit, and then the first pressure by the pressure mechanism by the first pressure An abutting step of pressing the first substrate and the second substrate to bring the adhesive into contact with the second substrate, and then the first pressure by the pressurizing mechanism at a second pressure smaller than the first pressure. A film thickness adjusting step of pressing the substrate and the second substrate to adjust the film thickness of the adhesive, and then the first substrate and the second substrate at a third pressure larger than the first pressure by the pressurizing mechanism. And a control unit that controls the pressurizing mechanism so as to perform the bonding step of pressing and bonding the substrates. , Joining device. The pressurizing mechanism includes a vertically extending pressure vessel provided so as to cover the second substrate held by the second holding portion, and allows fluid to flow into and out of the pressure vessel. The joining apparatus according to claim 7, wherein the second holding portion is pressed toward the first holding portion. A processing container that houses the first holding part, the second holding part, and the pressure vessel, and is capable of sealing the inside;
A decompression mechanism for decompressing the atmosphere in the processing container,
The control unit maintains the inside of the processing vessel in a vacuum state in the contact step, the film thickness adjusting step, and the joining step, and in the film thickness adjusting step, the pressure in the pressure vessel is maintained in the processing vessel. The joining apparatus according to claim 8, wherein the pressurizing mechanism and the pressure reducing mechanism are controlled so as to be smaller than the pressure of the pressure. The first substrate is a substrate to be processed;
The bonding apparatus according to claim 7, wherein the second substrate is a support substrate that supports a substrate to be processed. It is a joining system provided with the joining device according to any one of claims 7 to 10,
The bonding apparatus, a coating apparatus that applies an adhesive to the first substrate, a heat treatment apparatus that heats the first substrate coated with the adhesive to a predetermined temperature, the coating apparatus, the heat treatment apparatus, and the A processing station having a transfer area for transferring a first substrate, a second substrate, or a superposed substrate in which the first substrate and the second substrate are bonded to the bonding apparatus;
A bonding system comprising: a loading / unloading station for loading / unloading the first substrate, the second substrate, or the superposed substrate with respect to the processing station.

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