JP2016040805A - Substrate processing method, program, computer storage medium, and substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To efficiently inspect a holding state of a substrate and to suitably perform substrate processing.SOLUTION: A bonding apparatus includes: a first holding unit 200 including a body section 201 having a resistance value larger than a resistance value of a substrate W to be processed and a first electrostatic adsorption section 202 for electrostatically adsorbing the substrate W to be processed by using Johnson-Rahbeck force; and a power supply 203 for applying voltage to electrodes 202a, 202b of the first electrostatic adsorption section 202. The bonding apparatus, after holding the substrate W to be processed by the first holding unit 200, measures a current value of a current outputted from the power supply 203 and compares the measured current value with a predetermined reference value to inspect a holding state of the substrate W to be processed by the first holding unit 200.SELECTED DRAWING: Figure 11

Description

  The present invention relates to a substrate processing method, a program, a computer storage medium, and a substrate processing apparatus.

  In recent years, for example, in semiconductor device manufacturing processes, semiconductor substrates such as silicon wafers and compound semiconductor wafers have become larger and thinner. A plurality of electronic circuits are formed on the semiconductor substrate. Hereinafter, such a substrate is referred to as a substrate to be processed. A thin substrate to be processed having a large diameter may be warped or cracked during conveyance or polishing. For this reason, the substrate to be processed is reinforced by attaching a support substrate to the substrate to be processed.

  For example, in Patent Document 1, the substrate to be processed and the support substrate are respectively held by the upper chuck and the lower chuck, and the substrate to be processed and the support substrate are brought into contact and pressed by lowering the upper chuck to join them together. A joining apparatus is disclosed. An adhesive is applied to the surface of the substrate to be processed or the support substrate, and the two are joined by being pressed as described above. Since the substrate to be processed and the support substrate are bonded in a vacuum processing atmosphere, an electrostatic chuck that holds the substrate by electrostatic attraction is used as the upper chuck and the lower chuck.

  As described above, in the substrate processing using the electrostatic chuck, it is necessary that the substrate is appropriately held by the electrostatic chuck in order to appropriately perform the substrate processing. Thus, for example, Patent Document 2 proposes that the capacitance between the substrate and the electrode of the electrostatic chuck is measured, the measured capacitance is compared with a reference value, and the holding state of the substrate is inspected. Has been.

JP 2014-27118 A JP 2000-228440 A

  However, the method described in Patent Document 2 requires a separate measuring instrument for measuring the capacitance. For this reason, there is room for improvement in the inspection of the holding state of the substrate by the electrostatic chuck.

  The present invention has been made in view of such a point, and an object thereof is to efficiently inspect the holding state of a substrate and appropriately perform substrate processing.

  In order to achieve the above object, the present invention is a substrate processing method for performing a predetermined process on a substrate, and a main body portion having a resistance value larger than the resistance value of the substrate, and an electrostatic adsorption portion for electrostatically adsorbing the substrate And a substrate holding step of generating a Johnson Rahbek force by applying a voltage from a power source to the electrode of the electrostatic attraction unit, and holding the substrate by the substrate holding unit, An inspection step of measuring a current value of a current output from the power source, comparing the measured current value with a predetermined reference value, and inspecting a holding state of the substrate by the substrate holding unit, and then the inspection And a processing step of performing a predetermined process on the substrate when it is determined in the step that the substrate holding state by the substrate holding unit is normal.

  According to the present invention, a Johnson Rabeck type electrostatic chuck is used for the substrate holding portion, and the resistance value of the main body portion of the substrate holding portion is larger than the resistance value of the substrate. Then, when a voltage is applied to the electrodes of the substrate holding unit, if the substrate is not held by the substrate holding unit, the current hardly flows between the electrodes inside the substrate holding unit, and the current of the current output from the power supply The value is small. On the other hand, when the substrate is held by the substrate holding part, the current flows easily between the substrate holding part and the substrate because the resistance value of the substrate is small, and the current value of the current output from the power supply is growing.

  Based on this knowledge, in the present invention, the current value of the current output from the power source is measured in the inspection process, and the holding state of the substrate is inspected. Specifically, for example, when the measured current value is larger than a predetermined reference value, it is determined that the holding state of the substrate is normal. On the other hand, for example, when the measured current value is less than the predetermined reference value, the substrate Is determined to be abnormal. At this time, since a separate measuring instrument is not required unlike the inspection based on the conventional capacitance, the holding state of the substrate can be efficiently inspected. Only when the holding state of the substrate is normal, the predetermined processing is performed on the substrate, so that the substrate processing can be appropriately performed.

  For example, when an electrostatic chuck using Coulomb force is used, the resistance value of the electrostatic chuck is larger than the resistance value of the Johnson Rabeck type electrostatic chuck. That is, in a Coulomb type electrostatic chuck, current hardly flows between electrodes in the electrostatic chuck, but current does not easily flow between the electrostatic chuck and the substrate. For this reason, in the Coulomb type electrostatic chuck, the fluctuation of the current value is small, and it is difficult to inspect the holding state of the substrate based on the current value, and the holding state of the substrate based on the capacitance as in the past. Must be inspected. In other words, the present invention is effective when the substrate holder is a Johnson Rabeck type electrostatic chuck.

  The substrate holding unit further includes a vacuum suction unit that vacuums and sucks the substrate, and the substrate holding step includes a vacuum suction step in which the substrate is vacuum-sucked by the vacuum suction unit, and then the processing atmosphere is depressurized. At the time, the vacuum suction of the substrate by the vacuum suction unit may be stopped, and an electrostatic suction step of electrostatically chucking the substrate by the electrostatic suction unit may be included.

  Before the substrate holding step, the current value of the current output from the power source is measured, the measured current value is compared with a reference value different from the predetermined reference value, and the substrate holding unit You may inspect the clean state of the surface.

  The predetermined process may be a process of bonding substrates through an adhesive.

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the substrate processing apparatus so that the substrate processing method is executed by the substrate processing apparatus.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  According to another aspect of the present invention, there is provided a substrate processing apparatus for performing predetermined processing on a substrate, wherein the substrate is electrostatically attracted by utilizing a body portion having a resistance value larger than the resistance value of the substrate and Johnson Rabeck force. A substrate holding unit including an electrostatic chuck unit, a power source that applies a voltage to the electrode of the electrostatic chuck unit, and a Johnson Rabeck force generated by applying a voltage from the power source to the electrode of the electrostatic chuck unit The substrate holding step of holding the substrate by the substrate holding unit, and then measuring the current value of the current output from the power source, comparing the measured current value with a predetermined reference value, An inspection process for inspecting the holding state of the substrate by the substrate holding unit, and then a processing step for performing a predetermined process on the substrate when it is determined in the inspection step that the holding state of the substrate by the substrate holding unit is normal And the fruit As to, it is characterized by having a control unit for controlling the power source and the substrate holder.

  The substrate holding unit further includes a vacuum suction unit that vacuums and sucks the substrate, and the control unit includes a vacuum suction step of vacuum suction of the substrate by the vacuum suction unit in the substrate holding step, and then An electrostatic chucking step of stopping vacuum suction of the substrate by the vacuum chucking unit and electrostatically chucking the substrate by the electrostatic chucking unit when reducing the processing atmosphere. The power source may be controlled.

  The control unit measures a current value of a current output from the power supply before the substrate holding step, and compares the measured current value with a reference value different from the predetermined reference value. The clean state of the surface of the substrate holder may be inspected.

  The predetermined process may be a process of bonding substrates through an adhesive.

  According to the present invention, the substrate holding state can be efficiently inspected, and substrate processing can be performed appropriately.

It is a top view which shows the outline of a structure of the joining system concerning this embodiment. It is a side view which shows the outline of the internal structure of the joining system concerning this embodiment. It is a side view of a to-be-processed substrate and a support substrate. It is a cross-sectional view which shows the outline of a structure of a joining apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of a junction part. It is a longitudinal cross-sectional view which shows the outline of a structure of a 1st holding | maintenance part. It is a longitudinal cross-sectional view which shows the outline of a structure of a 2nd holding | maintenance part. It is a longitudinal cross-sectional view which shows the outline of a structure of a junction part. It is a flowchart which shows the main processes of a joining process. It is explanatory drawing which shows the electric current which flows between electrodes in the state which is not hold | maintaining the to-be-processed substrate by the 1st holding | maintenance part. It is explanatory drawing which shows the electric current which flows between electrodes in the state which hold | maintained the to-be-processed substrate by the 1st holding | maintenance part.

  Embodiments of the present invention will be described below with reference to the accompanying drawings. In the present embodiment, a bonding process for bonding substrates together will be described as a substrate process of the present invention. In addition, this invention is not limited by embodiment shown below.

<1. Structure of joining system>
First, a configuration of a bonding system including a bonding apparatus as a substrate processing apparatus according to the present embodiment will be described with reference to FIGS. FIG. 1 is a plan view showing an outline of the configuration of the joining system. FIG. 2 is a side view illustrating the outline of the internal configuration of the joining system. FIG. 3 is a side view of the substrate to be processed and the support substrate. In the following, in order to clarify the positional relationship, the X-axis direction, the Y-axis direction, and the Z-axis direction that are orthogonal to each other are defined, and the positive direction of the Z-axis is the vertically upward direction.

  In the following, as shown in FIG. 3, the plate surface of the substrate W to be processed that is bonded to the support substrate S via the adhesive G is referred to as “bonding surface Wj”, and the bonding surface Wj Is referred to as the “non-bonding surface Wn”. In addition, among the plate surfaces of the support substrate S, the plate surface on the side bonded to the substrate W to be processed via the adhesive G is referred to as “bonding surface Sj”, and the plate surface on the opposite side to the bonding surface Sj is referred to as “ This is referred to as “non-joint surface Sn”.

  The substrate W to be processed is a substrate in which a plurality of electronic circuits (devices) are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, and a plate surface on the side where the electronic circuits are formed is used as a bonding surface Wj. . The substrate W to be processed is thinned by polishing the non-bonded surface Wn after bonding to the support substrate S.

  On the other hand, the support substrate S as a support substrate is a substrate having the same diameter as the substrate to be processed W, and supports the substrate to be processed W. As the support substrate S, a glass substrate or the like can be used in addition to a silicon wafer.

  As shown in FIG. 1, the bonding system 1 carries in and out cassettes Cw, Cs, and Ct that can accommodate a plurality of substrates W, a plurality of support substrates S, and a plurality of superposed substrates T, respectively, with the outside. The loading / unloading station 2 and the processing station 3 including various processing apparatuses for performing predetermined processing on the substrate W to be processed, the support substrate S, and the superposed substrate T are integrally connected.

  The loading / unloading station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the Y-axis direction (vertical direction in FIG. 1). The cassettes Cw, Cs, and Ct can be placed on these cassette placement plates 11 when the cassettes Cw, Cs, and Ct are carried into and out of the joining system 1. As described above, the carry-in / out station 2 is configured to be capable of holding a plurality of substrates to be processed W, a plurality of support substrates S, and a plurality of superposed substrates T.

  In addition, the number of the cassette mounting plates 11 is not limited to this embodiment, and can be determined arbitrarily. One of the cassettes may be used for collecting defective substrates. That is, it is a cassette that can separate a substrate in which a problem occurs in joining of the substrate to be processed W and the support substrate S due to various factors from another normal superposed substrate T. In the present embodiment, among the plurality of cassettes Ct, one cassette Ct is used for collecting defective substrates, and the other cassette Ct is used for accommodating normal superposed substrates T.

  In the carry-in / out station 2, a first substrate transfer region 20 is provided adjacent to the cassette mounting table 10. The first substrate transport region 20 is provided with a first substrate transport device 22 that is movable on a transport path 21 extending in the Y-axis direction. The first substrate transfer device 22 is also movable in the vertical direction and around the vertical axis (θ direction), and the cassettes Cw, Cs, Ct on each cassette mounting plate 11 and the third of the processing station 3 to be described later. The substrate to be processed W, the support substrate S, and the superposed substrate T can be transferred to and from the transition devices 50 and 51 of the processing block G3.

  The processing station 3 is provided with a plurality of, for example, three processing blocks G1, G2, and G3 including various processing apparatuses. For example, a first processing block G1 is provided on the front side of the processing station 3 (Y-axis negative direction side in FIG. 1), and on the back side of the processing station 3 (Y-axis positive direction side in FIG. 1). A second processing block G2 is provided. Further, a third processing block G3 is provided on the loading / unloading station 2 side of the processing station 3 (X-axis negative direction side in FIG. 1).

  For example, in the first processing block G1, bonding devices 30 to 33 for pressing and bonding the target substrate W and the support substrate S via the adhesive G are arranged in this order from the loading / unloading station 2 side in the X-axis direction. Are arranged side by side. The number and arrangement of the joining devices 30 to 33 can be arbitrarily set. Moreover, the structure of the joining apparatuses 30-33 is mentioned later.

  For example, in the second processing block G2, as shown in FIG. 2, the coating apparatus 40 that applies the adhesive G to the substrate W to be processed and the substrate W to which the adhesive G is applied are heated to a predetermined temperature. Heat treatment apparatuses 41 to 43 and similar heat treatment apparatuses 44 to 46 are arranged in this order in the direction toward the loading / unloading station 2 side (X-axis negative direction in FIG. 1). The heat treatment apparatuses 41 to 43 and the heat treatment apparatuses 44 to 46 are provided in three stages in this order from the bottom. The number of heat treatment apparatuses 41 to 46 and the arrangement in the vertical direction and the horizontal direction can be arbitrarily set.

  As the coating device 40, for example, a coating device described in JP-A-2014-27118 can be used. That is, the coating apparatus 40 includes a spin chuck that holds and rotates the substrate to be processed W, and an adhesive nozzle that supplies the adhesive G onto the substrate W to be processed held by the spin chuck.

  As said heat processing apparatus 41-46, the heat processing apparatus of Unexamined-Japanese-Patent No. 2014-27118 can be used, for example. That is, the heat treatment apparatuses 41 to 46 include a heating unit that heat-processes the substrate W to be processed and a temperature adjustment unit that adjusts the temperature of the substrate W to be processed. In the heat treatment apparatuses 41 to 46, the temperature of the superposed substrate T can also be adjusted. Furthermore, in order to adjust the temperature of the superposed substrate T, a temperature adjusting device (not shown) may be provided in the second processing block G2. The temperature control device has the same configuration as the heat treatment devices 41 to 46 described above, and a temperature control plate is used instead of the hot plate. A cooling member such as a Peltier element is provided inside the temperature adjustment plate, and the temperature adjustment plate can be adjusted to a set temperature.

  For example, in the third processing block G3, transition devices 50 and 51 for the target substrate W, the support substrate S, and the superposed substrate T are provided in two stages in this order from the bottom.

  As shown in FIG. 1, a second substrate transfer region 60 is formed in a region surrounded by the first processing block G1 to the third processing block G3. For example, a second substrate transfer device 61 is disposed in the second substrate transfer region 60.

  The second substrate transfer device 61 includes a transfer arm that can move around the vertical direction, the horizontal direction (X-axis direction, Y-axis direction), and the vertical axis, for example. The second substrate transfer device 61 moves in the second substrate transfer region 60 and covers the predetermined devices in the surrounding first processing block G1, second processing block G2, and third processing block G3. The processing substrate W, the support substrate S, and the superposed substrate T can be transported.

  The above joining system 1 is provided with a controller 70 as shown in FIG. The control unit 70 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling processing of the substrate to be processed W, the support substrate S, and the superposed substrate T in the bonding system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize the below-described joining process in the joining system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 70 from the storage medium H.

<2. Structure of joining device>
Next, the structure of the joining apparatuses 30 to 33 described above will be described. In addition, below, the structure of the joining apparatus 30 is demonstrated, Since the structure of the joining apparatuses 31-33 is the same as that of the joining apparatus 30, description is abbreviate | omitted.

  As shown in FIG. 4, the joining apparatus 30 has a processing container 100 capable of sealing the inside. A loading / unloading port 101 for the substrate W to be processed, the support substrate S, and the superposed substrate T is formed on the side surface of the processing container 100 on the second substrate transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port. Is provided.

  The inside of the processing container 100 is partitioned by the inner wall 102 into a preprocessing region D1 and a joining region D2. The loading / unloading port 101 described above is formed on the side surface of the processing container 100 in the preprocessing region D1. The inner wall 102 is also provided with a loading / unloading port 103 for the substrate W to be processed, the support substrate S, and the superposed substrate T.

  In the pretreatment region D1, a delivery unit 110 for delivering the substrate to be processed W, the support substrate S, and the superposed substrate T to and from the outside of the bonding apparatus 30 is provided. The delivery unit 110 is disposed adjacent to the loading / unloading port 101. The delivery unit 110 is arranged in a plurality of, for example, two stages in the vertical direction, and can deliver any two of the target substrate W, the support substrate S, and the superposed substrate T at the same time. For example, the substrate W to be processed or the support substrate S before bonding may be delivered by one delivery unit 110, and the superposed substrate T after joining may be delivered by another delivery unit 110. Alternatively, the substrate W to be processed before bonding may be delivered by one delivery unit 110 and the support substrate S before joining may be delivered by another delivery unit 110.

  As the delivery unit 110, for example, a delivery unit described in Japanese Patent Application Laid-Open No. 2014-27118 can be used. That is, the delivery unit 110 includes a delivery arm 111 and a support pin 112. The delivery arm 111 can deliver the substrate W to be processed, the support substrate S, and the superposed substrate T between the second substrate transfer device 61 and the support pins 112. The support pins 112 are provided in a plurality of, for example, three locations, and can support the substrate to be processed W, the support substrate S, and the superposed substrate T.

  On the X-axis negative direction side of the pretreatment region D1, that is, on the loading / unloading port 103 side, a reversing unit 120 that reverses the front and back surfaces of the support substrate S is provided, for example, vertically above the delivery unit 110.

  As the reversing unit 120, for example, a reversing unit described in JP 2014-27118 A can be used. In other words, the reversing unit 120 has a holding arm 121 that holds the support substrate S and the substrate W to be processed. The holding arm 121 extends in the horizontal direction (Y-axis direction in FIG. 4). The holding arm 121 is provided with holding members 122 for holding the supporting substrate S and the substrate W to be processed, for example, at four locations. The holding arm 121 is supported by a driving unit 123 including, for example, a motor. By this drive unit 123, the holding arm 121 is rotatable about the horizontal axis and can move in the horizontal direction (X-axis direction and Y-axis direction in FIG. 4). Further, the holding arm 121 can be moved in the vertical direction along the support pillar 124 extending in the vertical direction by the driving unit 123.

  A position adjusting mechanism 125 that adjusts the horizontal orientation of the support substrate S and the substrate W to be processed held by the holding member 122 is supported by the support pillar 124 via a support plate 126. The position adjustment mechanism 125 includes a base 127 and a detection unit 128 that detects the positions of the support substrate S and the notch portion of the substrate W to be processed. The position adjustment mechanism 125 detects the positions of the notch portions of the support substrate S and the substrate W to be processed by the detection unit 128 while moving the support substrate S and the substrate W to be processed held in the holding member 122 in the horizontal direction. Thus, the horizontal orientation of the support substrate S and the substrate to be processed W is adjusted by adjusting the position of the notch portion.

  The delivery unit 110 configured as described above is arranged in two stages in the vertical direction, and the reversing unit 120 is arranged vertically above the delivery unit 110. That is, the delivery arm 111 of the delivery unit 110 moves in the horizontal direction below the holding arm 121 and the position adjustment mechanism 125 of the reversing unit 120. Further, the support pin 112 of the delivery unit 110 is disposed below the holding arm 121 of the reversing unit 120.

  On the X axis positive direction side of the bonding region D2, a transfer unit 130 for transferring the substrate to be processed W, the support substrate S, and the superposed substrate T is provided for the delivery unit 110, the reversing unit 120, and the bonding unit 140 described later. ing. The conveyance unit 130 is attached to the loading / unloading port 103.

  As the conveyance unit 130, for example, a conveyance unit described in JP 2014-27118 A can be used. That is, the transport unit 130 includes a plurality of, for example, two transport arms 131. The two transfer arms 131 are arranged in two stages in this order from the bottom in the vertical direction, and the back surface of the substrate to be processed W, the support substrate S, and the superposed substrate T (non-bonded in the substrate to be processed W and the support substrate S). A transport arm that holds and transports the surfaces Wn and Sn) and a transport arm that transports while holding the outer surface of the surface of the support substrate S, that is, the bonding surface Sj. For example, an arm driving unit 132 including a motor is provided at the base end of the transfer arm 131. Each arm 131 can move in the horizontal direction independently by the arm driving unit 132. The transfer arm 131 and the arm driving unit 132 are supported by the base 133.

  A bonding portion 140 that presses and bonds the target substrate W and the support substrate S via the adhesive G is provided on the X axis negative direction side of the bonding region D2.

  As shown in FIG. 5, the bonding unit 140 is a first holding unit 200 as a substrate holding unit that places and holds the substrate W to be processed on the upper surface, and a substrate holding unit that holds the supporting substrate S by suction on the lower surface. Second holding part 300. The first holding unit 200 is provided below the second holding unit 300 and is disposed so as to face the second holding unit 300. That is, the substrate W to be processed held by the first holding unit 200 and the support substrate S held by the second holding unit 300 are arranged to face each other.

  As shown in FIG. 6, a Johnson Rabeck type bipolar electrostatic chuck is used for the first holding unit 200. The main body 201 of the first holding unit 200 has a resistance value larger than the resistance value of the substrate to be processed W, and the main body 201 is made of ceramic such as aluminum nitride ceramic.

  The main body 201 is provided with a first electrostatic chuck 202 for electrostatic chucking of the substrate W to be processed. The first electrostatic attraction unit 202 includes a pair of electrodes 202a and 202b. For example, a DC high-voltage power supply 203 is connected to the pair of electrodes 202 a and 202 b, and for example, a voltage using the electrode 202 a as an anode and the electrode 202 b as a cathode is applied from the power supply 203. The first electrostatic attraction unit 202 applies a voltage from the power source 203 to the electrodes 202a and 202b, thereby generating a Johnson Rahbek force on the holding surface 201a of the main body unit 201, so that the holding surface 201a is covered. The non-bonding surface Wn of the processing substrate W is adsorbed. In the present embodiment, the example in which the first electrostatic attraction unit 202 has one electrode 202a and 202b in FIG. 6 has been described, but the number of electrodes is not limited to this, and there are a plurality of electrodes. Also good.

  The main body 201 is provided with a first vacuum suction unit 204 for vacuum suction of the substrate W to be processed. The first vacuum suction unit 204 has an intake space 204a and a plurality of through holes 204b communicating from the holding surface 201a to the intake space 204a. An intake device 206 such as a vacuum pump is connected to the intake space 204 a via an intake pipe 205. Then, the first vacuum suction unit 204 uses the negative pressure generated by the suction of the suction device 206 to suck the non-joint surface Wn of the substrate W to be processed to the holding surface 201a.

  As shown in FIG. 5, a first heating mechanism 207 that heats the substrate W to be processed is provided inside the main body 201. For the first heating mechanism 207, for example, a ceramic heater that can be used in a reduced-pressure atmosphere is used. The heating temperature of the substrate W to be processed by the first heating mechanism 207 is controlled by the control unit 70, for example.

  A first cooling mechanism 208 is provided on the lower surface side of the first holding unit 200. As the first cooling mechanism 208, for example, a metal cooling jacket can be used, and the first holding unit 200 is held by the first holding unit 200 by cooling the first holding unit 200 using a cooling fluid such as cold water as a medium. The processed substrate W is cooled. A heat insulating plate (not shown) is further provided on the lower surface side of the first cooling mechanism 208, and heat generated when the substrate W is heated by the first heating mechanism 207 is directed to the first chamber 411 side described later. You may make it prevent that it is transmitted. Further, the first cooling mechanism 208 may be omitted, and only the heat insulating plate may be provided.

  Below the first holding part 200, for example, three raising / lowering pins 210 for supporting and raising / lowering the substrate W or the superposed substrate T from below are provided. The elevating pin 210 can be moved up and down by the elevating drive unit 211. The elevating drive unit 211 has, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. Further, in the vicinity of the central portion of the first holding unit 200, through holes 212 penetrating the first holding unit 200 and the first chamber 411 in the thickness direction are formed at, for example, three locations. The elevating pin 210 is inserted through the through hole 212 and can protrude from the upper surface of the first holding unit 200. In addition, the raising / lowering drive part 211 is provided in the lower part of the 1st chamber 411 mentioned later. The elevating drive unit 211 is provided on the support member 220.

  As shown in FIG. 7, as the first holding unit 200, a Johnson Rabeck type bipolar electrostatic chuck is used for the second holding unit 300. In the second holding unit 300, the main body 301 has a resistance value larger than the resistance value of the support substrate S, and the main body 301 is made of ceramic such as aluminum nitride ceramic.

  The main body 301 is provided with a second electrostatic adsorption unit 302 for electrostatically adsorbing the support substrate S. The second electrostatic attraction unit 302 has a pair of electrodes 302a and 302b. For example, a DC high voltage power source 303 is connected to the pair of electrodes 302 a and 302 b, and for example, a voltage using the electrode 302 a as an anode and the electrode 302 b as a cathode is applied from the power source 303. The second electrostatic attraction unit 302 applies a voltage from the power source 303 to the electrodes 302a and 302b, thereby generating a Johnson Rabeck force on the holding surface 301a of the main body 301 and supporting the holding surface 301a. The non-bonding surface Sn of the substrate S is adsorbed. In the present embodiment, the example in which the second electrostatic attraction unit 302 has one electrode 302a and one electrode 302b in FIG. 7 is described, but the number of electrodes is not limited to this, and there are a plurality of electrodes. Also good.

  The main body 301 is provided with a second vacuum suction unit 304 for vacuum suction of the support substrate S. The second vacuum suction portion 304 has an intake space 304a and a plurality of through holes 304b communicating from the holding surface 301a to the intake space 304a. An intake device 306 such as a vacuum pump is connected to the intake space 304 a via an intake pipe 305. The second vacuum suction unit 304 uses the negative pressure generated by the suction of the suction device 306 to suck the non-joint surface Sn of the support substrate S to the holding surface 301a.

  As shown in FIG. 5, a second heating mechanism 307 for heating the support substrate S is provided inside the main body 301. For the second heating mechanism 307, for example, a ceramic heater that can be used in a reduced-pressure atmosphere is used. The heating temperature of the support substrate S by the second heating mechanism 307 is controlled by the control unit 70, for example.

  A second cooling mechanism 308 is provided on the upper surface side of the second holding unit 300. As the second cooling mechanism 308, for example, a metal cooling jacket can be used, and the second holding unit 300 is held by the second holding unit 300 by cooling the second holding unit 300 using a cooling fluid such as cold water as a medium. The support substrate S is cooled. In addition, a heat insulating plate (not shown) is further provided on the upper surface side of the second cooling mechanism 308, and heat when the support substrate S is heated by the second heating mechanism 307 is transmitted to the support plate 310 side described later. You may make it prevent. Further, the second cooling mechanism 308 may be omitted and only a heat insulating plate may be provided.

  A pressure mechanism 320 that presses the second holding unit 300 vertically downward is provided on the upper surface side of the second holding unit 300 via the support plate 310. The pressurizing mechanism 320 moves the second holding unit 300 vertically downward to bring the support substrate S into contact with the target substrate W and pressurize it. The pressurizing mechanism 320 includes a pressure vessel 321 provided so as to cover the substrate W to be processed and the support substrate S, a fluid supply pipe 322 that supplies a fluid, for example, compressed air, to the inside of the pressure vessel 321, and a fluid to the inside. And a fluid supply source 323 for supplying a fluid to the pressure vessel 321 via the fluid supply pipe 322.

  The pressure vessel 321 is configured by, for example, a stainless steel bellows that can be expanded and contracted in the vertical direction. The pressure vessel 321 has a lower surface fixed to the upper surface of the support plate 310 and an upper surface fixed to the lower surface of the support plate 330 provided above the second holding unit 300. The fluid supply pipe 322 has one end connected to the pressure vessel 321 and the other end connected to the fluid supply source 323. The support plate 330 is preferably formed of a member having a strength that does not deform even when the pressure mechanism 320 receives a reaction force of a load applied to the second holding unit 300.

  Then, by supplying fluid from the fluid supply pipe 322 to the pressure vessel 321, the pressure vessel 321 extends. At this time, since the upper surface of the pressure vessel 321 and the lower surface of the support plate 330 are in contact with each other, the pressure vessel 321 extends only in the downward direction, and the second holding unit 300 provided on the lower surface of the pressure vessel 321 moves downward. Can be pressed. As a result, the support substrate S comes into contact with the substrate to be processed W and is pressed. The pressure applied to the target substrate W and the support substrate S is adjusted by adjusting the pressure of the fluid supplied to the pressure vessel 321.

  In addition, since the pressure vessel 321 has elasticity, even if there is a difference between the parallelism of the second holding unit 300 and the parallelism of the first holding unit 200, the difference can be absorbed. At this time, since the inside of the pressure vessel 321 is evenly pressurized by the fluid, the target substrate W and the support substrate S can be evenly pressed. Therefore, regardless of the parallelism of the first holding unit 200 and the second holding unit 300, the pressure vessel 321 presses the second holding unit 300 (the substrate W to be processed and the support substrate S) uniformly in the surface. Can do.

  Between the 1st holding | maintenance part 200 and the 2nd holding | maintenance part 300, the 1st imaging part 400 which images the surface of the to-be-processed substrate W hold | maintained at the 1st holding | maintenance part 200, and 2nd holding | maintenance A second imaging unit 401 that images the surface of the support substrate S held by the unit 300 is provided. For example, a wide-angle CCD camera is used for each of the first imaging unit 400 and the second imaging unit 401. The first imaging unit 400 and the second imaging unit 401 are configured to be movable in the vertical direction and the horizontal direction by a moving mechanism (not shown).

  The joint 140 has a chamber 410 that can be sealed inside. The chamber 410 accommodates the first holding unit 200, the second holding unit 300, the support plate 310, the pressure vessel 321, the support plate 330, the first imaging unit 400, and the second imaging unit 401 described above. .

  The chamber 410 includes a first chamber 411 that supports the first holding unit 200 and a second chamber 412 that supports the second holding unit 300. The second chamber 412 is configured to be vertically movable by an elevating mechanism (not shown) such as an air cylinder. A sealing material 413 for maintaining the airtightness of the inside of the chamber 410 is provided on the joint surface of the first chamber 411 with the second chamber 412. For example, an O-ring is used as the sealing material 413. Then, as shown in FIG. 8, the first chamber 411 and the second chamber 412 are brought into contact with each other, whereby the interior of the chamber 410 is formed in a sealed space.

  As shown in FIG. 5, a plurality of, for example, five moving mechanisms 420 that move the second holding unit 300 in the horizontal direction via the second chamber 412 are provided around the second chamber 412. . Of the five moving mechanisms 420, four moving mechanisms 420 are used to move the second holding unit 300 in the horizontal direction, and one moving mechanism 420 is around the vertical axis (θ direction) of the second holding unit 300. Used for rotation.

  The moving mechanism 420 includes a cam 421 that contacts the outer peripheral portion of the second chamber 412 to move the second holding unit 300 and a cam (not shown) that rotates the cam 421 via the shaft 422. And the rotation drive unit 423. The cam 421 is provided eccentrically with respect to the central axis of the shaft 422. Then, by rotating the cam 421 by the rotation driving unit 423, the center position of the cam 421 with respect to the second holding unit 300 moves, and the second holding unit 300 can be moved in the horizontal direction.

  The first chamber 411 is provided with a decompression mechanism 430 that decompresses the atmosphere in the chamber 410. The decompression mechanism 430 includes an intake pipe 431 for taking in the atmosphere in the chamber 410 and an intake device 432 such as a vacuum pump connected to the intake pipe 431. Note that the first chamber 411 may be provided with a gas supply mechanism (not shown) for supplying an inert gas such as nitrogen gas into the chamber 410.

  In addition, operation | movement of each part in the joining apparatuses 30-33 is controlled by the control part 70 mentioned above.

<3. Operation of joining system>
Next, a method for bonding the substrate to be processed W and the support substrate S performed using the bonding system 1 configured as described above will be described. FIG. 9 is a flowchart showing an example of main steps of the joining process.

  First, a cassette Cw that accommodates a plurality of substrates to be processed W, a cassette Cs that accommodates a plurality of support substrates S, and an empty cassette Ct are placed on a predetermined cassette placement plate 11 of the carry-in / out station 2. The Thereafter, the substrate to be processed W in the cassette Cw is taken out by the first substrate transfer device 22 and transferred to the transition device 50 of the third processing block G3 of the processing station 3. At this time, the substrate W to be processed is transported with the non-joint surface Wn facing downward.

  Next, the substrate W to be processed is transferred to the coating apparatus 40 by the second substrate transfer device 61. The to-be-processed substrate W carried into the coating device 40 is transferred from the second substrate transport device 61 to the spin chuck and is sucked and held. At this time, the non-joint surface Wn of the substrate to be processed W is held by suction. Then, the adhesive G is supplied from the adhesive nozzle to the bonding surface Wj of the target substrate W while rotating the target substrate W by the spin chuck. The supplied adhesive G is diffused over the entire bonding surface Wj of the substrate to be processed W by centrifugal force, and the adhesive G is applied to the bonding surface Wj of the substrate to be processed W (step A1 in FIG. 9).

  Next, the substrate W to be processed is transferred to the heat treatment apparatus 41 by the second substrate transfer apparatus 61. In the heat treatment apparatus 41, first, the substrate to be processed W is heated to a predetermined temperature, for example, 100 ° C. to 300 ° C. by the heating unit (step A2 in FIG. 9). By performing such heating, the adhesive G on the substrate W to be processed is heated and the adhesive G is cured. Thereafter, the temperature adjustment unit adjusts the temperature of the substrate to be processed W to a predetermined temperature, for example, 23 ° C., which is normal temperature.

  Next, the substrate W to be processed is transferred to the bonding apparatus 30 by the second substrate transfer device 61. The substrate to be processed W transferred to the bonding apparatus 30 is transferred from the second substrate transfer apparatus 61 to the transfer arm 111 of the transfer unit 110 and then transferred from the transfer arm 111 to the support pins 112. Thereafter, the substrate W to be processed is transferred from the support pin 112 to the reversing unit 120 by the transfer arm 131 of the transfer unit 130.

  The substrate to be processed W transferred to the reversing unit 120 is held by the holding member 122 and moved to the position adjusting mechanism 125. Then, the position adjusting mechanism 125 adjusts the position of the notch portion of the substrate to be processed W to adjust the horizontal direction of the substrate to be processed W (step A3 in FIG. 9).

  Thereafter, the substrate W to be processed is transferred from the reversing unit 120 to the bonding unit 140 by the transfer arm 131 of the transfer unit 130. At this time, the second chamber 412 is located above the first chamber 411, the second chamber 412 and the first chamber 411 are not in contact with each other, and the inside of the chamber 410 is formed in a sealed space. Absent. The substrate W to be processed transferred to the bonding unit 140 is vacuum-sucked and held by the first holding unit 200 (step A4 in FIG. 9).

  In step A <b> 4, the non-bonded surface Wn of the target substrate W is vacuum-sucked to the holding surface 201 a of the main body 201 by the first vacuum suction unit 204. And on the 1st holding | maintenance part 200, the to-be-processed substrate W is hold | maintained in the state which the joint surface Wj of the to-be-processed substrate W faced upwards, ie, the state in which the adhesive agent G faced upwards.

  While the processes A1 to A4 described above are performed on the target substrate W, the support substrate S is processed subsequent to the target substrate W. The support substrate S is transferred to the bonding apparatus 30 by the second substrate transfer device 61. In addition, about the process by which the support substrate S is conveyed to the joining apparatus 30, since it is the same as that of the said embodiment, description is abbreviate | omitted.

  The support substrate S transferred to the bonding apparatus 30 is transferred from the second substrate transfer apparatus 61 to the transfer arm 111 of the transfer unit 110 and then transferred from the transfer arm 111 to the support pins 112. Thereafter, the support substrate S is transported from the support pins 112 to the reversing unit 120 by the transport arm 131 of the transport unit 130.

  The support substrate S conveyed to the reversing unit 120 is held by the holding member 122 and moved to the position adjusting mechanism 125. Then, the position adjustment mechanism 125 adjusts the position of the notch portion of the support substrate S to adjust the horizontal direction of the support substrate S (step A5 in FIG. 9). The support substrate S whose horizontal direction has been adjusted is moved in the horizontal direction from the position adjustment mechanism 125 and moved upward in the vertical direction, and then the front and back surfaces thereof are reversed (step A6 in FIG. 9). That is, the bonding surface Sj of the support substrate S is directed downward.

  Thereafter, the support substrate S is moved downward in the vertical direction, and is then transferred from the reversing unit 120 to the bonding unit 140 by the transfer arm 131 of the transfer unit 130. At this time, since the transfer arm 131 holds only the outer peripheral portion of the bonding surface Sj of the support substrate S, the bonding surface Sj is not contaminated by particles or the like attached to the transfer arm 131, for example. The support substrate S conveyed to the bonding unit 140 is vacuum-sucked and held by the second holding unit 300 (step A7 in FIG. 9).

  In step A <b> 7, the non-bonding surface Sn of the support substrate S is vacuum-sucked to the holding surface 301 a of the main body 301 by the second vacuum suction unit 304. And in the 2nd holding | maintenance part 300, the support substrate S is hold | maintained in the state in which the joint surface Sj of the support substrate S faced the downward direction.

  In the bonding unit 140, first, horizontal position adjustment between the target substrate W held by the first holding unit 200 and the support substrate S held by the second holding unit 300 is performed. A plurality of predetermined reference points, for example, four or more reference points, are formed on the surface of the substrate W to be processed and the surface of the support substrate S. Then, the first imaging unit 400 is moved in the horizontal direction, and the surface of the substrate W to be processed is imaged. Further, the second imaging unit 401 is moved in the horizontal direction, and the surface of the support substrate S is imaged. Thereafter, the position of the reference point of the substrate W to be processed displayed in the image captured by the first imaging unit 400, and the position of the reference point of the support substrate S displayed in the image captured by the second imaging unit 401 The horizontal position (including the horizontal direction) of the support substrate S is adjusted by the moving mechanism 420 so that the two match. That is, the cam 421 is rotated by the rotation drive unit 423 to move the second holding unit 300 in the horizontal direction via the second chamber 412, and the horizontal position of the support substrate S is adjusted. Thus, the horizontal positions of the substrate to be processed W and the support substrate S are adjusted, and the substrate to be processed W and the support substrate S are arranged to face each other (step A8 in FIG. 9).

  Thereafter, after the first imaging unit 400 and the second imaging unit 401 are withdrawn from between the first holding unit 200 and the second holding unit 300, the second chamber is moved by a moving mechanism (not shown). 412 is lowered. Then, as shown in FIG. 8, the second chamber 412 and the first chamber 411 are brought into contact with each other, and the interior of the chamber 410 constituted by the second chamber 412 and the first chamber 411 becomes a sealed space. It is formed (step A9 in FIG. 9). At this time, a minute gap is formed between the target substrate W held by the first holding unit 200 and the support substrate S held by the second holding unit 300. That is, the substrate to be processed W and the support substrate S are not in contact with each other.

  Thereafter, the decompression mechanism 430 sucks the atmosphere in the chamber 410 and decompresses the interior of the chamber 410 to a vacuum state (step A10 in FIG. 9). In the present embodiment, the inside of the chamber 410 is depressurized to a predetermined vacuum pressure, for example, 10 Pa or less.

  Thus, when the pressure in the chamber 410 is reduced, the first holding unit 200 stops the vacuum suction of the substrate W to be processed by the first vacuum suction unit 204, and the first electrostatic suction unit 202 causes the substrate to be processed to be processed. W is electrostatically adsorbed and held. Specifically, a voltage is applied from the power source 203 between the electrodes 202 a and 202 b of the first electrostatic attraction unit 202 to generate a Johnson Rabeck force, thereby attracting the substrate W to be processed. Even when the voltage is applied in this way, the voltage is low (for example, 1.0 kV or less), and thus it is possible to suppress damage to the first holding unit 200 and the device to be processed W. Similarly, also in the second holding unit 300, the vacuum suction of the support substrate S by the second vacuum suction unit 304 is stopped, and the support substrate S is electrostatically suctioned and held by the second electrostatic suction unit 302. Specifically, a voltage is applied from the power source 303 between the electrodes 302a and 302b of the second electrostatic attraction unit 302 to generate a Johnson Rabeck force, thereby attracting the substrate W to be processed (step A11 in FIG. 9). . The reason why the substrate to be processed W and the support substrate S are electrostatically attracted in this way is that when the inside of the chamber 410 is depressurized, the substrate to be processed W and the support substrate S can be appropriately evacuated and cannot be vacuum-sucked. Even after the pressure in the chamber 410 is reduced to a vacuum state in step A10, the vacuum suction of the substrate W to be processed by the first vacuum suction unit 204 and the vacuum suction of the support substrate S by the second vacuum suction unit 304 are as follows. It may be performed continuously.

  Thereafter, an inspection of the holding state of the substrate W to be processed by the first holding unit 200 and an inspection of the holding state of the support substrate S by the second holding unit 300 are performed (step A12 in FIG. 9).

Here, as described above, the resistance value of the main body 201 of the first holding unit 200 is larger than the resistance value of the substrate W to be processed. Specifically, the resistance value of the main body 201 is, for example, 1.0 × 10 ^{9 to 12} Ωcm, and the resistance value of the substrate to be processed W is, for example, 1.0 × 10 ⁴ Ωcm. For this reason, when a voltage is applied between the power source 203 and the electrodes 202a and 202b, the current value of the current output from the power source 203 changes depending on the holding state of the substrate W to be processed.

  As shown in FIG. 10, in the state where the first holding unit 200 does not hold the target substrate W, the current value A1 of the current flowing between the electrodes 202a and 202b inside the main body 201 is small. The current value A1 is, for example, 90 μA or less.

  On the other hand, as shown in FIG. 11, in the state where the first holding unit 200 holds the substrate to be processed W, the current between the electrodes 202a and 202b flows between the main body 201 and the substrate to be processed W. It flows through the surface layer on the non-joint surface Wn side of the substrate to be processed W. The current value A2 of the current is larger than the current value A1 because the resistance value of the substrate W to be processed is smaller than the resistance value of the main body 201. The current value A2 is, for example, 100 μA to 200 μA. In practice, a current flows between the electrodes 202a and 202b even inside the main body 201. However, since this current is very small, the illustration is omitted.

  And before performing the joining process of the to-be-processed substrate W and the support substrate S in the joining system 1, the said electric current value A1 and electric current value A2 are calculated | required, and the reference value As between these electric current value A1 and electric current value A2 is obtained. It is determined in advance. That is, the reference value As indicating the holding state of the substrate W to be processed (the presence or absence of the substrate W to be processed) in the first holding unit 200 is determined in advance.

  When inspecting the holding state of the substrate W to be processed in step A12 with the reference value As thus determined, first, the current value of the current output from the power source 203 is measured. For the current measurement, an ammeter (not shown) built in the power source 203 may be used, or an ammeter (not shown) provided on the wiring connecting the electrodes 202a and 202b may be used. .

  The measured current value is output to the control unit 70. The control unit 70 compares the measured current value with the reference value As. When the measured current value is larger than the reference value As, it is determined by the first holding unit 200 that the substrate W to be processed is appropriately held. On the other hand, when the measured current value is equal to or less than the reference value As, the first holding unit 200 determines that the target substrate W is not properly held.

  The inspection of the holding state of the support substrate S in the step A12 is performed in the same manner as the inspection of the holding state of the substrate W to be processed. That is, by measuring the current value of the current output from the power source 303 and comparing the measured current value with the reference value, the holding state of the support substrate S by the second holding unit 300 is inspected.

  In Step A12, when it is determined that the target substrate W is appropriately held by the first holding unit 200 and the support substrate S is appropriately held by the second holding unit 300 The bonding processing of the substrate W to be processed and the support substrate S is performed.

  On the other hand, in step A12, when it is determined that the target substrate W is not properly held by the first holding unit 200, or it is determined that the support substrate S is not properly held by the second holding unit 300. If so, the status is confirmed by the operator. If the bonding process can be continued, the steps A4, A7, and A8 to A12 are repeated until the holding state of the target substrate W and the support substrate S becomes normal again.

  Thereafter, when it is determined in Step A12 that the holding state of the target substrate W and the support substrate S is normal, compressed air is supplied to the pressure vessel 321 and the pressure vessel 321 is filled with a predetermined pressure, for example, 10 kPa to 1 MPa. To. Here, the inside of the chamber 410 is maintained in a vacuum state, and the pressure vessel 321 is disposed in a vacuum atmosphere in the chamber 410. For this reason, the pressure pressed downward by the pressurizing mechanism 320, that is, the pressure transmitted from the pressure vessel 321 to the second holding unit 300 is a differential pressure between the pressure in the pressure vessel 321 and the pressure in the chamber 410. Become. Then, the second holding unit 300 is pressed downward by the pressurizing mechanism 320, and the entire surface of the substrate W to be processed and the entire surface of the support substrate S abut.

  Since the chamber 410 is maintained in a vacuum state, even if the substrate to be processed W and the support substrate S are brought into contact with each other, generation of voids between the substrate to be processed W and the support substrate S is suppressed. Can do. The pressure for pressing the second holding unit 300 by the pressurizing mechanism 320 is set according to the type of the adhesive G, the type of the device on the substrate W to be processed, and the like.

  In this way, when the target substrate W and the support substrate S are pressed by the pressure mechanism 320, the target substrate W and the support substrate S are heated by the heating mechanisms 207 and 307 at a predetermined temperature, for example, 100 ° C. to 400 ° C. In this way, by pressing the second holding unit 300 with a predetermined pressure by the pressurizing mechanism 320 while heating the support substrate S and the substrate to be processed W at a predetermined temperature, the substrate to be processed W and the support substrate S are brought into contact with each other. It is more strongly bonded and bonded (step A13 in FIG. 9).

  In addition, the heating of the to-be-processed substrate W and the support substrate S may be performed between process A4 and A7 and process A12 after holding the to-be-processed substrate W and the support substrate S, respectively. In addition, after the process A13, the target substrate W and the support substrate S may be cooled to a predetermined temperature by the cooling mechanisms 208 and 308.

  Thereafter, the second chamber 412 is raised, and the inside of the chamber 410 is opened to the atmosphere (step A14 in FIG. 9). Then, electrostatic adsorption is stopped in the first holding unit 200 and the second holding unit 300, and the superposed substrate T is vacuum-sucked and held by the first vacuum suction unit 204 of the first holding unit 200. (Step A15 in FIG. 9).

  The superposed substrate T in which the substrate to be processed W and the support substrate S are bonded in this way is transferred from the bonded portion 140 to the delivery portion 110 by the transfer arm 131 of the transfer portion 130. The superposed substrate T transferred to the transfer unit 110 is transferred to the transfer arm 111 via the support pins 112, and further transferred from the transfer arm 111 to the second substrate transfer device 61.

  Thereafter, the superposed substrate T is transferred to the transition device 51 by the second substrate transfer device 61, and then transferred to the cassette Ct of the predetermined cassette mounting plate 11 by the first substrate transfer device 22 of the loading / unloading station 2. . In this way, a series of bonding processing of the target substrate W and the support substrate S is completed.

  According to the above embodiment, the current value of the current output from the power source 203 in step A12 is measured, and the holding state of the substrate W to be processed is inspected. For example, when the measured current value is larger than the reference value As, it is determined that the holding state of the substrate to be processed W is normal. On the other hand, when the measured current value is equal to or less than the predetermined reference value As, for example, It is determined that the holding state of W is abnormal. At this time, since it is not necessary to separately provide a specific apparatus, the holding state of the substrate W to be processed can be efficiently inspected. Similarly, the holding state of the support substrate S can be inspected efficiently. Since the bonding process between the target substrate W and the support substrate S is performed only when the holding state of the target substrate W and the support substrate S is normal, the bonding process can be appropriately performed.

For example, when an electrostatic chuck using a Coulomb force is used for the first holding unit 200, the resistance value of the electrostatic chuck (for example, 1.0 × 10 ¹⁵ Ωcm) is used. It is larger than the resistance value of the chuck (for example, 1.0 × 10 ^{9 to 12} Ωcm). That is, in a Coulomb type electrostatic chuck, current hardly flows between the electrodes 202a and 202b in the electrostatic chuck, but current does not easily flow between the electrostatic chuck and the substrate W to be processed. For this reason, the fluctuation of the current value is small in the Coulomb type electrostatic chuck, and the holding state of the substrate W to be processed cannot be inspected based on the current value. Furthermore, in the coulomb type electrostatic chuck, it is necessary to apply a high voltage (for example, 5.0 kV to 10.0 kV). For this reason, the substrate holding state inspection method using the current value as in the present embodiment is useful when the first holding unit 200 is a Johnson Rabeck type electrostatic chuck. This effect is the same in the inspection of the holding state of the support substrate S.

  In addition, before the pressure in the chamber 410 is reduced, the substrate to be processed W is vacuum-sucked by the first vacuum suction unit 204 in step A4, and after the pressure in the chamber 410 is reduced (in a vacuum state), the first vacuum in step A11. The substrate to be processed W is electrostatically adsorbed by the electrostatic adsorption unit 202. Thereafter, when the chamber 410 is further opened to the atmosphere, the superposed substrate T is vacuum-sucked by the first vacuum suction unit 204 again in step A15.

  Here, when the inside of the chamber 410 is depressurized, the substrate W to be processed cannot be vacuum-sucked and must be electrostatically sucked, but on the other hand, damage to the first holding unit 200 and the device of the substrate W to be processed is suppressed. From this point of view, we want to suppress electrostatic adsorption as quickly as possible. In the present embodiment, a Johnson Rahbek type electrostatic chuck is used for the first holding unit 200, so that the voltage applied to the substrate W to be processed is low, and the first holding unit 200 and the substrate to be processed are low. The aim is to avoid even minor risks, although the W device is very unlikely to be damaged. In this respect, in the present embodiment, since the substrate W to be processed is electrostatically adsorbed only while the inside of the chamber 410 is depressurized, the first holding unit 200 and the substrate to be processed are held while appropriately holding the substrate W to be processed. It is possible to reliably prevent the W device from being damaged. This effect is the same for the second holding unit 300 and the support substrate S.

  Furthermore, since the bonding system 1 includes the bonding devices 30 to 33, the coating device 40, and the heat treatment devices 41 to 46, the processing target substrate W is sequentially processed to apply the adhesive G to the processing target substrate W. While heating to predetermined | prescribed temperature, the front and back of the support substrate S is reversed in the joining apparatus 30. FIG. Then, in the joining apparatus 30, the to-be-processed substrate W coated with the adhesive G and heated to a predetermined temperature is joined to the support substrate S whose front and back surfaces are reversed. Thus, according to this embodiment, the to-be-processed substrate W and the support substrate S can be processed in parallel. In addition, while the substrate to be processed W and the support substrate S are bonded in the bonding apparatus 30, another substrate to be processed W and the support substrate S can be processed in the coating apparatus 40, the heat treatment apparatus 41, and the bonding apparatus 30. Therefore, the substrate W to be processed and the support substrate S can be bonded efficiently, and the throughput of the bonding process can be improved.

<4. Other Embodiments>
In the above embodiment, the holding state of the target substrate W and the support substrate S is inspected in step A12. In addition, the holding surface 201a of the first holding unit 200 and the holding surface of the second holding unit 300 are added. The clean state of 301a may also be inspected.

  As a result of investigations by the inventors, it is found that the support substrate S is not properly held by the second holding unit 300 and falls as a cause of dropping because the holding surface 301a of the second holding unit 300 is dropped. It was. In addition, the inventors have intensively studied and found that the current value of the current output from the power source 303 decreases when the holding surface 301a is dirty, for example.

  Therefore, for example, the relationship between the clean state of the holding surface 301a and the current value of the current output from the power source 303 is obtained in advance. Then, a current value when the holding surface 301a needs to be cleaned, that is, a reference value At is obtained. Needless to say, the reference value At is a value different from the reference value As used when inspecting the holding state of the support substrate S in the above embodiment.

  Then, before the supporting substrate S is held by the second holding unit 300 in step A7, a voltage is applied from the power source 303 to the electrodes 302a and 302b, and the current value of the current output from the power source 303 is measured. The measured current value is output to the control unit 70, and the control unit 70 compares the measured current value with the reference value At. If the measured current value is larger than the reference value At, it is determined that the cleaning of the holding surface 301a is unnecessary, and the subsequent processing is performed as it is. On the other hand, when the measured current value is equal to or smaller than the reference value At, it is determined that the holding surface 301a needs to be cleaned, and the holding surface 301a is cleaned.

  The magnitude of the current value of the current output from the power source 303 is effective for responsiveness when the support substrate S is electrostatically attracted, that is, the time required to appropriately hold the support substrate S as the current value decreases. Becomes longer. In this regard, according to the present embodiment, the cleaning state of the holding surface 301a is inspected, and the processing is performed only when the holding surface 301a is clean. It can hold | maintain and can suppress that the support substrate S falls like the past.

  In addition, the first holding unit 200 may be inspected for a clean state of the holding surface 201a before the target substrate W is held by the first holding unit 200 in step A4. A specific inspection method is the same as the inspection method for the clean state of the holding surface 301a of the second holding unit 300, and thus the description thereof is omitted.

  In the above embodiment, when the substrate W to be processed is held by the first holding unit 200, the vacuum suction by the first vacuum suction unit 204 and the electrostatic suction by the first electrostatic suction unit 202 are performed. However, the substrate W to be processed may be held only by electrostatic adsorption. In addition, when the target substrate W is held by the first holding unit 200 in step A4, the holding state of the target substrate W may be inspected. For example, if the substrate W to be processed is warped, it takes time until the first holding unit 200 sucks and holds the entire surface of the substrate W to be processed. In such a case, it is particularly useful to inspect the holding state of the substrate to be processed W as described above.

  Similarly, when the support substrate S is held by the second holding unit 300, the vacuum suction by the second vacuum suction unit 304 and the electrostatic suction by the second electrostatic suction unit 302 are performed. You may hold | maintain the support substrate S only.

  In the above embodiment, the substrate to be processed W and the support substrate S are bonded in a state where the substrate to be processed W is disposed on the lower side and the support substrate S is disposed on the upper side. The top and bottom arrangement of the support substrate S may be reversed. At this time, the first holding unit 200 may support the support substrate S, and the second holding unit 300 may support the substrate W to be processed. And the process A1-A4 mentioned above is performed with respect to the support substrate S, and the adhesive agent G is apply | coated to the joint surface Sj of the said support substrate S. FIG. Further, the above-described steps A5 to A7 are performed on the substrate W to be processed, and the front and back surfaces of the substrate W to be processed are reversed. And the process A8-A11 mentioned above is performed, and the to-be-processed substrate W and the support substrate S are joined.

  In the above embodiment, the adhesive G is applied to the bonding surface Wj of the substrate to be processed W. However, the adhesive G may be applied to the bonding surface Sj of the support substrate S, or The adhesive G may be applied to both the bonding surface Wj and the bonding surface Sj of the support substrate S.

  In the above embodiments, the bonding process between the target substrate W and the support substrate S has been described as the substrate processing, but the substrate processing to which the present invention is applied is not limited to this. The present invention can be applied to any apparatus using a Johnson Rabeck type electrostatic chuck. For example, the present invention can also be applied to a vacuum apparatus such as a dry etching apparatus, a CVD apparatus, and a vacuum evaporation apparatus.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.

DESCRIPTION OF SYMBOLS 1 Joining system 2 Carry-in / out station 3 Processing station 30-33 Joining apparatus 70 Control part 200 1st holding | maintenance part 201 Main-body part 202 1st electrostatic adsorption part 202a, 202b Electrode 203 Power supply 204 1st vacuum adsorption part 300 1st 2 holding part 301 body part 302 second electrostatic adsorption part 302a, 302b electrode 303 power supply 304 second vacuum adsorption part G adhesive S support substrate T superposition substrate W substrate to be processed

Claims (10)

A substrate processing method for performing predetermined processing on a substrate,
Johnson applies a voltage from the power supply to the electrode of the electrostatic chucking portion with respect to the substrate holding portion including a main body portion having a resistance value larger than the resistance value of the substrate and an electrostatic chucking portion that electrostatically chucks the substrate. A substrate holding step of generating a Rabeck force and holding the substrate by the substrate holding unit;
Thereafter, measuring the current value of the current output from the power source, comparing the measured current value with a predetermined reference value, and inspecting the holding state of the substrate by the substrate holding unit,
Thereafter, when it is determined in the inspection step that the substrate holding state by the substrate holding unit is normal, the substrate processing method includes performing a predetermined process on the substrate. The substrate holding unit further includes a vacuum suction unit that sucks and sucks the substrate,
The substrate holding step includes
A vacuum adsorption step of vacuum adsorbing the substrate by the vacuum adsorption unit;
Thereafter, when reducing the processing atmosphere, the vacuum suction of the substrate by the vacuum suction unit is stopped, and the electrostatic suction step of electrostatically chucking the substrate by the electrostatic suction unit is included. Item 2. The substrate processing method according to Item 1. Before the substrate holding step, the current value of the current output from the power source is measured, the measured current value is compared with a reference value different from the predetermined reference value, and the substrate holding unit The substrate processing method according to claim 1, wherein a clean state of the surface of the substrate is inspected. The substrate processing method according to claim 1, wherein the predetermined process is a process of bonding the substrates together with an adhesive. The program which operate | moves on the computer of the control part which controls the said substrate processing apparatus so that the substrate processing method as described in any one of Claims 1-4 may be performed with a substrate processing apparatus. A readable computer storage medium storing the program according to claim 5. A substrate processing apparatus for performing predetermined processing on a substrate,
A substrate holding unit including a main body unit having a resistance value larger than the resistance value of the substrate, and an electrostatic adsorption unit that electrostatically adsorbs the substrate using Johnson Rabeck force;
A power supply for applying a voltage to the electrode of the electrostatic chuck,
A substrate holding step of generating a Johnson Rahbek force by applying a voltage from a power source to the electrode of the electrostatic adsorption unit and holding the substrate by the substrate holding unit, and then a current output from the power source An inspection step of measuring the value, comparing the measured current value with a predetermined reference value, and inspecting the holding state of the substrate by the substrate holding portion, and then the substrate holding portion by the substrate holding portion in the inspection step And a control unit that controls the power source so as to perform a processing step of performing a predetermined process on the substrate when it is determined that the holding state is normal. A substrate processing apparatus. The substrate holding unit further includes a vacuum suction unit that sucks and sucks the substrate,
In the substrate holding step, the control unit stops the vacuum suction of the substrate by the vacuum suction unit when the vacuum suction step of vacuum suction of the substrate by the vacuum suction unit, and then depressurizes the processing atmosphere. The substrate processing apparatus according to claim 7, wherein the substrate holding unit and the power source are controlled so as to execute an electrostatic adsorption step of electrostatically adsorbing the substrate by the electrostatic adsorption unit. The control unit measures a current value of a current output from the power supply before the substrate holding step, and compares the measured current value with a reference value different from the predetermined reference value. The substrate processing apparatus according to claim 7, wherein a clean state of a surface of the substrate holding unit is inspected. The substrate processing apparatus according to claim 7, wherein the predetermined process is a process of bonding substrates through an adhesive.

Images