JP5781988B2 - Joining apparatus, joining system, joining method, program, and computer storage medium - Google Patents

Description

  The present invention relates to a joining device that joins a substrate to be processed and a support substrate via an adhesive of a thermoplastic resin, a joining system including the joining device, a joining method using the joining device, a program, and a computer storage medium.

  In recent years, for example, in semiconductor device manufacturing processes, semiconductor wafers (hereinafter referred to as “wafers”) have been increasing in diameter. Further, in a specific process such as mounting, it is required to make the wafer thinner. For example, if a thin wafer having a large diameter is transported or polished as it is, the wafer may be warped or cracked. For this reason, for example, in order to reinforce the wafer, the wafer is attached to, for example, a wafer that is a support substrate or a glass substrate.

  The bonding of the wafer and the support substrate is performed by interposing an adhesive between the wafer and the support substrate using, for example, a bonding system. The bonding system includes, for example, a coating device that applies an adhesive to a wafer or a support substrate, a heat treatment device that heats the wafer or the support substrate to which the adhesive is applied, and presses the wafer and the support substrate through the adhesive. And a joining device for joining. In this bonding system, an adhesive is applied to the wafer or the support substrate with a coating apparatus and a heat treatment apparatus and heated to a predetermined temperature, and then the wafer and the support substrate are pressed and bonded with the bonding apparatus while being heated. (Patent Document 1).

  By the way, in recent years, various adhesives have been developed. For example, a thermoplastic resin may be used for the adhesive. A thermoplastic resin is a resin that softens when heated and solidifies when cooled. In such a case, when bonding the wafer and the support substrate, it is necessary to heat the wafer and the support substrate to a predetermined temperature to soften the adhesive, and then cool the wafer and the support substrate to cure the adhesive. is there. Therefore, a bonding apparatus including a heating mechanism for heating the wafer and the support substrate and a cooling mechanism for cooling the wafer and the support substrate has been proposed (Patent Document 2).

JP 2012-69900 A International Publication WO2010 / 055730

  However, the wafer bonded by the bonding apparatus described in Patent Document 1 or Patent Document 2 may be warped before bonding. When the wafer and the support substrate are bonded in such a state, the bonded overlapped wafer may be warped. If it does so, various processes, such as subsequent conveyance of a superposition | polymerization wafer, a grinding | polishing process, and patterning of a wafer, cannot be performed appropriately.

  This invention is made | formed in view of this point, and it aims at performing the joining of a to-be-processed substrate and a support substrate appropriately through the adhesive agent of a thermoplastic resin.

In order to achieve the above object, the present invention provides a bonding apparatus for bonding a substrate to be processed and a support substrate via an adhesive of a thermoplastic resin, the first holding unit for holding the substrate to be processed, A second holding unit disposed opposite to the first holding unit and holding the supporting substrate; a first heating mechanism provided on the first holding unit side for heating the substrate to be processed; and the second A second heating mechanism that is provided on the holding unit side and that heats the support substrate, a first cooling mechanism that is provided on the first holding unit side and that cools the substrate to be processed, and the second holding unit side A second cooling mechanism that cools the support substrate, and heats the substrate to be processed and the support substrate by at least the first heating mechanism or the second heating mechanism. After the contact, the substrate to be processed is cooled to the first cooling temperature by the first cooling mechanism. Rutotomoni, the support substrate by the second cooling mechanism to cool at a second cooling temperature which is different from the first cooling temperature, possess a control unit for controlling the bonding of the support substrate and the target substrate, the The control unit sets the first cooling temperature to the second when the substrate to be processed is warped because the central portion of the substrates to be processed before bonding protrudes toward the second holding unit compared to the peripheral portion. If the substrate to be processed is warped because the central portion of the substrate to be processed before bonding protrudes toward the first holding portion compared with the peripheral portion, the second cooling temperature is set to be lower than the cooling temperature. The first cooling mechanism and the second cooling mechanism are controlled so as to be lower than the first cooling temperature . The thermoplastic resin is a resin that softens when heated and solidifies when cooled.

  According to the present invention, first, the substrate to be processed and the support substrate are heated at a predetermined temperature by at least the first heating mechanism or the second heating mechanism. Then, the adhesive is softened, and the substrate to be processed and the support substrate can be brought into close contact with each other. Thereafter, the substrate to be processed is cooled to the first cooling temperature by the first cooling mechanism, and the support substrate is cooled by the second cooling mechanism at a second cooling temperature different from the first cooling temperature. When the substrate to be processed and the support substrate are cooled at different temperatures in this manner, the amount of thermal expansion of the substrate to be processed and the amount of thermal expansion of the support substrate can be made different. Then, the adhesive is solidified in a state where the thermal expansion amount of the high temperature side substrate is increased between the first cooling temperature and the second cooling temperature. Thereafter, for example, when the substrate to be processed and the support substrate are cooled to room temperature, the shrinkage amount of the substrate to be processed and the support substrate is different. Warpage occurs according to the temperature difference of the cooling temperature. In this case, for example, even when the substrate to be processed before bonding is warped, the warpage of the substrate to be processed is suppressed by adjusting the first cooling temperature of the substrate to be processed and the second cooling temperature of the support substrate. The superposition | polymerization board | substrate can be warped in the direction to carry out, and a superposition | polymerization board | substrate can be joined flatly as a result. Moreover, in the bonding apparatus according to the present invention, the substrate to be processed and the support substrate are positively cooled by the first cooling mechanism and the second cooling mechanism, respectively, so that the cooling can be performed uniformly in the substrate plane. . From this point of view, the polymerization substrate is not distorted or warped. As described above, according to the present invention, the substrate to be processed and the support substrate can be appropriately bonded, and the subsequent transport and processing of the superposed substrate can be appropriately performed.

The present invention according to another aspect is a bonding apparatus for bonding a substrate to be processed and a support substrate via an adhesive of a thermoplastic resin, the first holding portion for holding the substrate to be processed, and the first holding A second holding unit that holds the support substrate, a first heating mechanism that is provided on the first holding unit side and that heats the substrate to be processed, and on the second holding unit side. A second heating mechanism for heating the support substrate; provided on the first holding unit side; provided on the first holding unit side for cooling the substrate to be processed; and on the second holding unit side; After the substrate to be processed and the support substrate are heated by the second cooling mechanism for cooling the support substrate and at least the first heating mechanism or the second heating mechanism, and the substrate to be processed and the support substrate are brought into close contact with each other And cooling the substrate to be processed to the first cooling temperature by the first cooling mechanism, A control unit for controlling the bonding between the substrate to be processed and the support substrate so that the support substrate is cooled by the second cooling mechanism at a second cooling temperature different from the first cooling temperature. The unit has a correlation between the first cooling temperature and the second cooling temperature, and a warpage amount of the substrate to be processed, and the control unit is configured based on the warpage amount of the substrate to be processed before bonding. From the correlation, the first cooling temperature and the second cooling temperature are set.

  Further, the control unit may set the first cooling temperature and the second cooling temperature from the correlation based on a warpage amount of the substrate to be processed measured before bonding.

  The joining device includes a pressure vessel that is vertically extendable so as to cover the support substrate held by the second holding portion, and allows the fluid to flow into and out of the pressure vessel. A pressure mechanism that presses the holding portion toward the first holding portion, and the control portion heats the substrate to be processed and the support substrate by at least the first heating mechanism or the second heating mechanism. However, the bonding of the substrate to be processed and the support substrate may be controlled so that the substrate to be processed and the support substrate are pressed and brought into close contact with each other by the pressure mechanism.

  The present invention according to another aspect is a bonding system including the bonding apparatus, the bonding apparatus, a coating apparatus that applies an adhesive to a substrate to be processed or a support substrate, and a process to which the adhesive is applied. A heat treatment apparatus for heating a substrate or a support substrate to a predetermined temperature, and a substrate to be processed, a support substrate, or a superposed substrate in which the substrate to be processed and the support substrate are bonded to the coating apparatus, the heat treatment apparatus, and the bonding apparatus. And a transfer area for transferring a substrate to be processed, a support substrate, or a superposed substrate to / from the processing station. .

According to another aspect of the present invention, there is provided a bonding method for bonding a substrate to be processed and a support substrate via a thermoplastic resin adhesive, the substrate to be processed held by a first holding portion and a second holding. One of the first heating mechanism provided on the side of the first holding part and the second heating mechanism provided on the side of the second holding part Alternatively, both the substrate to be processed and the support substrate are heated by both, a contact process in which the substrate to be processed and the support substrate are brought into close contact with each other, and then the substrate to be processed by the first cooling mechanism provided on the first holding unit side. And cooling the support substrate at a second cooling temperature different from the first cooling temperature by a second cooling mechanism provided on the second holding unit side, possess a bonding step of bonding the substrate to be processed supported substrate, and the bonding Engineering If the substrate to be processed is warped because the central portion of the substrate to be processed before bonding protrudes toward the second holding portion as compared with the peripheral portion, the first cooling temperature is set higher than the second cooling temperature. If the substrate to be processed is warped because the central portion of the substrate to be processed before bonding protrudes toward the first holding portion as compared with the peripheral portion, the second cooling temperature is set to the first cooling temperature. It is characterized by being lower than the temperature .

According to another aspect of the present invention, there is provided a bonding method for bonding a substrate to be processed and a support substrate via a thermoplastic resin adhesive, the substrate to be processed and a second holding portion held by a first holding portion. After the support substrate held on the opposite side is disposed, either one of the first heating mechanism provided on the first holding unit side and the second heating mechanism provided on the second holding unit side or The substrate to be processed and the support substrate are both heated to bring the substrate to be processed into close contact with the support substrate, and then the substrate to be processed by the first cooling mechanism provided on the first holding unit side. In addition to cooling to the first cooling temperature, the support substrate is cooled at a second cooling temperature different from the first cooling temperature by the second cooling mechanism provided on the second holding unit side, and the target substrate is cooled. A process step for bonding the processing substrate and the support substrate, and to-be-processed before bonding Based on the warpage amount of the plate, the first cooling temperature and the second cooling temperature are set from the correlation between the first cooling temperature and the second cooling temperature and the warpage amount of the substrate to be processed. It is characterized by.

  After measuring the warpage amount of the substrate to be processed before bonding, the first cooling temperature and the second cooling temperature may be set from the correlation based on the measured warpage amount of the substrate to be processed. .

In the adhesion step, the substrate to be processed and the support substrate may be pressed and adhered to each other by a pressure mechanism while heating the substrate to be processed and the support substrate by at least the first heating mechanism or the second heating mechanism. .

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the joining apparatus in order to cause the joining apparatus to execute the joining method.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  ADVANTAGE OF THE INVENTION According to this invention, a to-be-processed substrate and a support substrate can be appropriately joined through the adhesive agent of a thermoplastic resin.

It is a top view which shows the outline of a structure of the joining system concerning this Embodiment. It is a side view which shows the outline of the internal structure of the joining system concerning this Embodiment. It is a side view of a to-be-processed wafer and a support wafer. It is a cross-sectional view which shows the outline of a structure of a joining apparatus. It is a top view which shows the outline of a structure of a delivery part. It is a top view which shows the outline of a structure of a delivery arm. It is a side view which shows the outline of a structure of a delivery arm. It is a top view which shows the outline of a structure of an inversion part. It is a side view which shows the outline of a structure of an inversion part. It is a side view which shows the outline of a structure of an inversion part. It is a side view which shows the outline of a structure of a holding | maintenance arm and a holding member. It is explanatory drawing which shows the positional relationship of a delivery part and an inversion part. It is a side view which shows the outline of a structure of a conveyance part. It is explanatory drawing which shows a mode that the conveyance part was arrange | positioned in the joining apparatus. It is a top view which shows the outline of a structure of a 1st conveyance arm. It is a side view which shows the outline of a structure of a 1st conveyance arm. It is a top view which shows the outline of a structure of a 2nd conveyance arm. It is a side view which shows the outline of a structure of a 2nd conveyance arm. It is explanatory drawing which shows a mode that the notch was formed in the 2nd holding | maintenance part. It is a longitudinal cross-sectional view which shows the outline of a structure of a junction part. It is a longitudinal cross-sectional view which shows the outline of a structure of a junction part. It is a top view which shows the outline of a structure of a 2nd holding | maintenance part and its moving mechanism. It is a longitudinal cross-sectional view which shows the outline of a structure of a coating device. It is a cross-sectional view which shows the outline of a structure of a coating device. It is a longitudinal cross-sectional view which shows the outline of a structure of the heat processing apparatus. It is a cross-sectional view which shows the outline of a structure of the heat processing apparatus. It is a flowchart which shows the main processes of a joining process. It is explanatory drawing which shows a mode that the to-be-processed wafer before joining curved. It is a graph which shows typically the time series change of the temperature of the to-be-processed wafer and the temperature of a support wafer in joining processing. It is explanatory drawing which shows a mode that the to-be-processed wafer and the support wafer were joined. It is explanatory drawing which shows a mode that the bonded superposition | polymerization wafer curved when the 1st cooling temperature of a 1st cooling mechanism and the 2nd cooling mechanism of a 2nd cooling mechanism were made into the same temperature. It is explanatory drawing which shows a mode that the to-be-processed wafer before joining curved in other embodiment. It is a side view which shows the outline of the internal structure of the joining system concerning other embodiment. It is a cross-sectional view which shows the outline of a structure of a curvature measuring apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of the junction part concerning other embodiment.

  Embodiments of the present invention will be described below. FIG. 1 is a plan view showing the outline of the configuration of the joining system 1 according to the present embodiment. FIG. 2 is a side view illustrating the outline of the internal configuration of the joining system 1.

In the bonding system 1, as shown in FIG. 3, for example, a processing target wafer W as a processing target substrate and a supporting wafer S as a supporting substrate are bonded via an adhesive G. Hereinafter, in the processing target wafer W, a surface bonded to the support wafer S via the adhesive G is referred to as a “bonding surface W _J ” as a surface, and a surface opposite to the bonding surface W _J is defined as a “back surface”. It is referred to as “non-bonding surface W _N ”. Similarly, in the support wafer S, a surface bonded to the processing target wafer W via the adhesive G is referred to as a “bonding surface S _J ” as a surface, and a surface opposite to the bonding surface S _J is defined as a “back surface”. It is referred to as “non-joint surface S _N ”. And in the joining system 1, the to-be-processed wafer W and the support wafer S are joined, and the superposition | polymerization wafer T as a superposition | polymerization board | substrate is formed.

  For the adhesive G, a thermoplastic resin is used. A thermoplastic resin is a resin that softens when heated and solidifies when cooled.

The processed wafer W is a wafer as a product, for example, joint surface W _J A plurality of electronic circuit is formed on the non-bonding surface W _N is polished. The support wafer S is a wafer having the same diameter as that of the wafer W to be processed and supporting the wafer W to be processed. In this embodiment, the case where a wafer is used as the support substrate will be described, but another substrate such as a glass substrate may be used.

As shown in FIG. 1, the bonding system 1 includes cassettes C _W , C _S , and C _T that can accommodate, for example, a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T, respectively. The loading / unloading station 2 for loading / unloading and the processing station 3 including various processing apparatuses for performing predetermined processing on the processing target wafer W, the supporting wafer S, and the overlapped wafer T are integrally connected. .

The loading / unloading station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the X direction (vertical direction in FIG. 1). These cassette mounting plates 11, cassettes _C W to the outside of the interface system _1, C S, when loading and unloading the _{C T,} a cassette _{C W,} C S, can be placed on _{C T} . Thus, the carry-in / out station 2 is configured to be capable of holding a plurality of wafers W to be processed, a plurality of support wafers S, and a plurality of superposed wafers T. The number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined. One of the cassettes may be used for collecting defective wafers. That is, this is a cassette that can separate from a normal superposed wafer T a wafer in which a defect occurs in the joining of the processing target wafer W and the supporting wafer S due to various factors. In the present embodiment, among the plurality of cassettes C _T, using a one cassette C _T for the recovery of the fault wafer, and using the other cassette C _T for the accommodation of a normal bonded wafer T.

In the loading / unloading station 2, a wafer transfer unit 20 is provided adjacent to the cassette mounting table 10. The wafer transfer unit 20 is provided with a wafer transfer device 22 that is movable on a transfer path 21 extending in the X direction. The wafer transfer device 22 is also movable in the vertical direction and around the vertical axis (θ direction), and includes cassettes C _W , C _S , and C _T on each cassette mounting plate 11 and a third of the processing station 3 to be described later. The to-be-processed wafer W, the support wafer S, and the superposed wafer T can be transferred to and from the transition devices 50 and 51 of the processing block G3.

  The processing station 3 is provided with a plurality of, for example, three processing blocks G1, G2, and G3 including various processing apparatuses. For example, a first processing block G1 is provided on the front side of the processing station 3 (X direction negative direction side in FIG. 1), and on the back side of the processing station 3 (X direction positive direction side in FIG. 1). A second processing block G2 is provided. Further, a third processing block G3 is provided on the processing station 3 on the side of the loading / unloading station 2 (the Y direction negative direction side in FIG. 1).

  For example, in the first processing block G1, bonding devices 30 to 33 for pressing and bonding the processing target wafer W and the supporting wafer S via the adhesive G are provided in this order from the loading / unloading station 2 side in the Y direction. They are arranged side by side.

  For example, in the second processing block G2, as shown in FIG. 2, the coating apparatus 40 that applies the adhesive G to the wafer W to be processed and the wafer W to which the adhesive G is applied are heated to a predetermined temperature. Heat treatment apparatuses 41 to 43 and similar heat treatment apparatuses 44 to 46 are arranged in this order in the direction toward the loading / unloading station 2 (the negative direction in the Y direction in FIG. 1). The heat treatment apparatuses 41 to 43 and the heat treatment apparatuses 44 to 46 are provided in three stages in this order from the bottom. The number of heat treatment apparatuses 41 to 46 and the arrangement in the vertical direction and the horizontal direction can be arbitrarily set.

  For example, in the third processing block G3, transition devices 50 and 51 for the processing target wafer W, the supporting wafer S, and the overlapped wafer T are provided in two stages in this order from the bottom.

  As shown in FIG. 1, a wafer transfer region 60 is formed in a region surrounded by the first processing block G1 to the third processing block G3. For example, a wafer transfer device 61 is disposed in the wafer transfer region 60. Note that the pressure in the wafer transfer region 60 is equal to or higher than atmospheric pressure, and the wafer to be processed W, the support wafer S, and the superposed wafer T are transferred in a so-called atmospheric system in the wafer transfer region 60.

  The wafer transfer device 61 has, for example, a transfer arm that can move around the vertical direction, horizontal direction (Y direction, X direction), and vertical axis. The wafer transfer device 61 moves within the wafer transfer region 60, and moves to a predetermined device in the surrounding first processing block G1, second processing block G2, and third processing block G3. S and superposed wafer T can be conveyed.

  Next, the structure of the joining apparatuses 30 to 33 described above will be described. As shown in FIG. 4, the bonding apparatus 30 includes a processing container 100 that can seal the inside. A loading / unloading port 101 for the wafer W to be processed, the support wafer S, and the overlapped wafer T is formed on the side surface of the processing container 100 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port. Yes.

  The inside of the processing container 100 is partitioned by the inner wall 102 into a preprocessing region D1 and a joining region D2. The loading / unloading port 101 described above is formed on the side surface of the processing container 100 in the preprocessing region D1. In addition, a carry-in / out port 103 for the wafer W to be processed, the support wafer S, and the overlapped wafer T is also formed on the inner wall 102.

  In the pretreatment region D <b> 1, a delivery unit 110 for delivering the processing target wafer W, the support wafer S, and the overlapped wafer T to and from the outside of the bonding apparatus 30 is provided. The delivery unit 110 is disposed adjacent to the loading / unloading port 101. As will be described later, a plurality of, for example, two stages of delivery units 110 are arranged in the vertical direction, and any two of the processing target wafer W, the supporting wafer S, and the overlapped wafer T can be delivered at the same time. For example, the processing target wafer W or the support wafer S before bonding may be delivered by one delivery unit 110, and the superposed wafer T after joining may be delivered by another delivery unit 110. Alternatively, the wafer W to be processed before bonding may be delivered by one delivery unit 110 and the support wafer S before joining may be delivered by another delivery unit 110.

  On the Y direction negative direction side of the pretreatment region D1, that is, the loading / unloading port 103 side, an inversion unit 111 that reverses the front and back surfaces of the support wafer S, for example, is provided vertically above the delivery unit 110. Note that the reversing unit 111 can adjust the horizontal direction of the support wafer S as described later, and can also adjust the horizontal direction of the wafer W to be processed.

  On the Y direction positive direction side of the bonding region D2, a transfer unit 112 that transfers the wafer W, the support wafer S, and the overlapped wafer T to the delivery unit 110, the reversing unit 111, and the bonding unit 113 described later is provided. ing. The transport unit 112 is attached to the loading / unloading port 103.

  On the Y direction negative direction side of the bonding region D2, a bonding portion 113 that presses and bonds the processing target wafer W and the support wafer S via the adhesive G is provided.

  Next, the configuration of the delivery unit 110 described above will be described. As shown in FIG. 5, the delivery unit 110 includes a delivery arm 120 and wafer support pins 121. The delivery arm 120 can deliver the wafer W to be processed, the support wafer S, and the overlapped wafer T to the outside of the bonding apparatus 30, that is, between the wafer transfer device 61 and the wafer support pins 121. The wafer support pins 121 are provided in a plurality of, for example, three locations, and can support the processing target wafer W, the supporting wafer S, and the overlapped wafer T.

  The delivery arm 120 includes an arm unit 130 that holds the processing target wafer W, the support wafer S, and the overlapped wafer T, and an arm driving unit 131 that includes, for example, a motor. The arm part 130 has a substantially disk shape. The arm drive unit 131 can move the arm unit 130 in the X direction (vertical direction in FIG. 5). Moreover, the arm drive part 131 is attached to the rail 132 extended | stretched to a Y direction (left-right direction in FIG. 5), and is comprised so that the movement on the said rail 132 is possible. With this configuration, the delivery arm 120 can move in the horizontal direction (X direction and Y direction), and the wafer W to be processed, the support wafer S, and the overlap between the wafer transfer device 61 and the wafer support pins 121. The wafer T can be delivered smoothly.

  On the arm part 130, as shown in FIGS. 6 and 7, a plurality of, for example, four wafer support pins 140 for supporting the processing target wafer W, the supporting wafer S, and the overlapped wafer T are provided. A guide 141 for positioning the processing target wafer W, the supporting wafer S, and the overlapped wafer T supported by the wafer supporting pins 140 is provided on the arm unit 130. A plurality of guides 141 are provided, for example, at four locations so as to guide the side surfaces of the processing target wafer W, the supporting wafer S, and the overlapped wafer T.

  On the outer periphery of the arm part 130, as shown in FIGS. 5 and 6, notches 142 are formed at, for example, four locations. The notch 142 causes the transfer arm of the wafer transfer device 61 to interfere with the arm unit 130 when the wafer W to be processed, the support wafer S, and the overlapped wafer T are transferred from the transfer arm of the wafer transfer device 61 to the transfer arm 120. Can be prevented.

  The arm part 130 is formed with two slits 143 along the X direction. The slit 143 is formed from the end surface of the arm portion 130 on the wafer support pin 121 side to the vicinity of the center portion of the arm portion 130. The slit 143 can prevent the arm unit 130 from interfering with the wafer support pins 121.

  Next, the configuration of the reversing unit 111 described above will be described. As shown in FIGS. 8 to 10, the reversing unit 111 includes a holding arm 150 that holds the support wafer S and the wafer W to be processed. The holding arm 150 extends in the horizontal direction (X direction in FIGS. 8 and 9). The holding arm 150 is provided with, for example, four holding members 151 for holding the support wafer S and the wafer W to be processed. As shown in FIG. 11, the holding member 151 is configured to be movable in the horizontal direction with respect to the holding arm 150. Further, on the side surface of the holding member 151, a notch 152 for holding the outer periphery of the support wafer S and the wafer W to be processed is formed. These holding members 151 can sandwich and hold the support wafer S and the wafer W to be processed.

  As shown in FIGS. 8 to 10, the holding arm 150 is supported by a first drive unit 153 provided with, for example, a motor. By this first drive unit 153, the holding arm 150 is rotatable about the horizontal axis and can move in the horizontal direction (X direction in FIGS. 8 and 9 and Y direction in FIGS. 8 and 10). The first drive unit 153 may rotate the holding arm 150 about the vertical axis to move the holding arm 150 in the horizontal direction. Below the first drive unit 153, for example, a second drive unit 154 including a motor or the like is provided. By this second driving unit 154, the first driving unit 153 can move in the vertical direction along the support pillar 155 extending in the vertical direction. As described above, the support wafer S and the wafer W to be processed held by the holding member 151 by the first drive unit 153 and the second drive unit 154 can rotate around the horizontal axis and move in the vertical and horizontal directions. it can.

  A position adjustment mechanism 160 that adjusts the horizontal direction of the support wafer S and the wafer W to be processed held by the holding member 151 is supported by the support column 155 via a support plate 161. The position adjustment mechanism 160 is provided adjacent to the holding arm 150.

  The position adjustment mechanism 160 includes a base 162 and a detection unit 163 that detects the positions of the notches of the support wafer S and the wafer W to be processed. The position adjusting mechanism 160 detects the positions of the notch portions of the support wafer S and the wafer W to be processed by the detection unit 163 while moving the support wafer S and the wafer W to be processed held in the holding member 151 in the horizontal direction. Thus, the horizontal orientation of the support wafer S and the wafer W to be processed is adjusted by adjusting the position of the notch portion.

  As shown in FIG. 12, the delivery unit 110 configured as described above is arranged in two stages in the vertical direction, and the reversing unit 111 is arranged vertically above the delivery unit 110. That is, the delivery arm 120 of the delivery unit 110 moves in the horizontal direction below the holding arm 150 and the position adjustment mechanism 160 of the reversing unit 111. Further, the wafer support pins 121 of the delivery unit 110 are disposed below the holding arm 150 of the reversing unit 111.

  Next, the configuration of the transport unit 112 described above will be described. As shown in FIG. 13, the transport unit 112 has a plurality of, for example, two transport arms 170 and 171. The first transfer arm 170 and the second transfer arm 171 are arranged in two stages in this order from the bottom in the vertical direction. The first transfer arm 170 and the second transfer arm 171 have different shapes as will be described later.

  At the base end portions of the transfer arms 170 and 171, for example, an arm driving unit 172 provided with a motor or the like is provided. Each arm 170, 171 can be independently moved in the horizontal direction by the arm driving unit 172. The transfer arms 170 and 171 and the arm driving unit 172 are supported by the base 173.

  The conveyance part 112 is provided in the loading / unloading port 103 formed in the inner wall 102 of the processing container 100 as shown in FIG.4 and FIG.14. The transport unit 112 can be moved in the vertical direction along the loading / unloading port 103 by, for example, a driving unit (not shown) provided with a motor or the like.

The first transfer arm 170 holds and transfers the back surface of the processing target wafer W, the supporting wafer S, and the overlapped wafer T (non-bonding surfaces W _N and S _{N in the} processing target wafer W and the supporting wafer S). As shown in FIG. 15, the first transfer arm 170 has an arm portion 180 whose tip is branched into two tip portions 180 a and 180 a, and a support that is formed integrally with the arm portion 180 and supports the arm portion 180. Part 181.

  On the arm portion 180, as shown in FIGS. 15 and 16, a plurality of resin O-rings 182 are provided, for example, at four locations. The O-ring 182 is in contact with the back surface of the processing target wafer W, the supporting wafer S, and the overlapped wafer T, and the frictional force between the O-ring 182 and the processing target wafer W, the supporting wafer S, and the back surface of the overlapping wafer T is The O-ring 182 holds the back surface of the processing target wafer W, the supporting wafer S, and the overlapped wafer T. The first transfer arm 170 can horizontally hold the processing target wafer W, the supporting wafer S, and the superposed wafer T on the O-ring 182.

  On the arm portion 180, guide members 183 and 184 provided outside the wafer W to be processed, the support wafer S, and the overlapped wafer T held by the O-ring 182 are provided. The first guide member 183 is provided at the distal end of the distal end portion 180 a of the arm portion 180. The second guide member 184 is formed in an arc shape along the outer periphery of the processing target wafer W, the supporting wafer S, and the overlapped wafer T, and is provided on the supporting portion 181 side. These guide members 183 and 184 can prevent the wafer W to be processed, the support wafer S, and the overlapped wafer T from jumping out of the first transfer arm 170 or sliding down. In addition, when the to-be-processed wafer W, the support wafer S, and the overlapped wafer T are held at appropriate positions on the O-ring 182, the to-be-processed wafer W, the support wafer S, and the overlapped wafer T are in contact with the guide members 183 and 184. do not do.

Second transfer arm 171 carries for example the surface of the support wafer S, that is, holding the outer periphery of the joint surface S _J. That is, the second transfer arm 171 holds and conveys the outer periphery of the joint surface S _J of the support wafer S to the front and back surfaces by the reversing unit 111 has been reversed. As shown in FIG. 17, the second transfer arm 171 has an arm portion 190 whose front end branches into two front end portions 190 a and 190 a, and a support that is formed integrally with the arm portion 190 and supports the arm portion 190. Part 191.

On the arm part 190, as shown in FIG.17 and FIG.18, the 2nd holding member 192 is provided in multiple, for example, four places. The second holding member 192 includes a mounting portion 193 for mounting the outer peripheral portion of the joint surface S _J of the support wafer S, extending from the mounting portion 193 upwards, the inner surface from the lower side to the upper side And a taper portion 194 expanding in a taper shape. The mounting portion 193 holds an outer peripheral portion within 1 mm from the peripheral edge of the support wafer S, for example. Further, since the inner side surface of the tapered portion 194 is tapered from the lower side to the upper side, for example, the support wafer S delivered to the second holding member 192 is displaced from a predetermined position in the horizontal direction. In addition, the support wafer S is smoothly guided and positioned by the taper portion 194 and is held by the placement portion 193. The second transfer arm 171 can hold the support wafer S horizontally on the second holding member 192.

  In addition, as shown in FIG. 19, the notch 201a is formed in the 2nd holding | maintenance part 201 of the junction part 113 mentioned later, for example in four places. When the support wafer S is transferred from the second transfer arm 171 to the second holding unit 201, the second holding member 192 of the second transfer arm 171 is moved to the second holding unit 201 by the notch 201a. Interference can be prevented.

  Next, the structure of the junction part 113 mentioned above is demonstrated. As shown in FIG. 20, the bonding unit 113 includes a first holding unit 200 that holds and holds the processing target wafer W on the upper surface, and a second holding unit 201 that holds the supporting wafer S on the lower surface by suction. doing. The first holding unit 200 is provided below the second holding unit 201 and is disposed so as to face the second holding unit 201. That is, the wafer W to be processed held by the first holding unit 200 and the support wafer S held by the second holding unit 201 are arranged to face each other. The material of the first holding unit 200 is not limited to the present embodiment, and other ceramics such as silicon carbide ceramic and alumina ceramic may be used, for example, insulating on the surface of the first holding unit 200. When forming a layer, you may use metal materials, such as aluminum and stainless steel other than a ceramic, for example.

  For the first holding unit 200, for example, an electrostatic chuck for electrostatically attracting the wafer W to be processed is used. The first holding unit 200 is made of ceramic such as aluminum nitride ceramic having thermal conductivity. Further, for example, a DC high-voltage power supply 210 is connected to the first holding unit 200. Then, an electrostatic force can be generated on the surface of the first holding unit 200, and the wafer W to be processed can be electrostatically adsorbed on the first holding unit 200.

  A first heating mechanism 211 that heats the wafer W to be processed is provided inside the first holding unit 200. For the first heating mechanism 211, for example, a heater is used. The heating temperature of the processing target wafer W by the first heating mechanism 211 is controlled by the control unit 400, for example.

  In addition, a first cooling mechanism 212 is provided on the lower surface side of the first holding unit 200. For the first cooling mechanism 212, for example, a copper cooling jacket is used. That is, a cooling medium, for example, a cooling gas flows through the first cooling mechanism 212, and the processing target wafer W is cooled by the cooling medium. The first cooling temperature of the wafer W to be processed by the first cooling mechanism 212 is controlled by the control unit 400, for example. The first cooling mechanism 212 is not limited to the present embodiment, and various configurations can be adopted as long as the processing target wafer W can be cooled. For example, the first cooling mechanism 212 may incorporate a cooling member such as a Peltier element.

  Further, a heat insulating plate 213 is provided on the lower surface side of the first cooling mechanism 212. The heat insulating plate 213 prevents the heat generated when the processing target wafer W is heated by the first heating mechanism 211 from being transmitted to the lower chamber 281 described later. For example, silicon nitride is used for the step heat plate 213.

  Below the first holding part 200, for example, three raising / lowering pins 220 are provided for supporting and raising / lowering the wafer W or the overlapped wafer T from below. The elevating pin 220 can be moved up and down by the elevating drive unit 221. The elevating drive unit 221 includes, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. Further, in the vicinity of the central portion of the first holding unit 200, through holes 222 penetrating the first holding unit 200 and the lower chamber 281 in the thickness direction are formed at, for example, three locations. The elevating pin 220 is inserted through the through hole 222 and can protrude from the upper surface of the first holding unit 200. In addition, the raising / lowering drive part 221 is provided in the lower part of the lower chamber 281 mentioned later. The elevating drive unit 221 is provided on the support member 230.

  For the second holding unit 201, for example, an electrostatic chuck for electrostatically attracting the support wafer S is used. The second holding unit 201 is made of ceramic such as aluminum nitride ceramic having thermal conductivity. In addition, for example, a DC high-voltage power supply 240 is connected to the second holding unit 201. Then, an electrostatic force is generated on the surface of the second holding unit 201, and the support wafer S can be electrostatically adsorbed on the second holding unit 201. The material of the second holding unit 201 is not limited to the present embodiment, and other ceramics such as silicon carbide ceramic and alumina ceramic may be used, for example, insulating on the surface of the second holding unit 201. When forming a layer, you may use metal materials, such as aluminum and stainless steel other than a ceramic, for example.

  A second heating mechanism 241 for heating the support wafer S is provided inside the second holding unit 201. For example, a heater is used for the second heating mechanism 241. For example, a heater is used for the second heating mechanism 241. The heating temperature of the wafer W to be processed by the second heating mechanism 241 is controlled by the control unit 400, for example.

  In addition, a second cooling mechanism 242 is provided on the upper surface side of the second holding unit 201. For example, a copper cooling jacket is used for the second cooling mechanism 242. That is, a cooling medium, for example, a cooling gas flows through the second cooling mechanism 242 and the support wafer S is cooled by the cooling medium. The second cooling temperature of the wafer W to be processed by the second cooling mechanism 242 is controlled by the control unit 400, for example. Note that the second cooling mechanism 242 is not limited to the present embodiment, and various configurations can be adopted as long as the second cooling mechanism 242 can be cooled. For example, the second cooling mechanism 242 may incorporate a cooling member such as a Peltier element.

  Note that the second holding unit 201 may include a heat insulating plate (not shown) provided on the upper surface side of the second cooling mechanism 242. This heat insulating plate prevents heat when the support wafer S is heated by the second heating mechanism 241 from being transmitted to the support plate 250 side described later.

  On the upper surface side of the second holding unit 201, a pressurizing mechanism 260 that presses the second holding unit 201 vertically downward is provided via a support plate 250. The pressurizing mechanism 260 includes a pressure vessel 261 provided so as to cover the processing target wafer W and the support wafer S, a fluid supply pipe 262 for supplying a fluid, for example, compressed air, to the inside of the pressure vessel 261, and a fluid for the inside. A fluid supply source 263 has a fluid for storing and supplying a fluid to the fluid supply pipe 262.

  The members on the upper surface side of these second holding portions 201 are supported by an air cylinder (not shown) provided above the support plate 250. Then, parallel adjustment of the upper chamber 282 and adjustment of the gap between the second holding unit 201 and the first holding unit 200 are performed by an adjustment bolt (not shown) provided above the support plate 250.

  The pressure vessel 261 is configured by, for example, a stainless steel bellows that is extendable in the vertical direction. The pressure vessel 261 has a lower surface fixed to the upper surface of the support plate 250 and an upper surface fixed to the lower surface of the support plate 264 provided above the second holding unit 201. The fluid supply pipe 262 has one end connected to the pressure vessel 261 and the other end connected to the fluid supply source 263. Then, by supplying fluid from the fluid supply pipe 262 to the pressure vessel 261, the pressure vessel 261 extends. At this time, since the upper surface of the pressure vessel 261 and the lower surface of the support plate 264 are in contact with each other, the pressure vessel 261 extends only in the downward direction, and the second holding portion 201 provided on the lower surface of the pressure vessel 261 is moved downward. Can be pressed. And since the pressure vessel 261 has elasticity, even if the parallelism of the 2nd holding | maintenance part 201 and the parallelism of the 1st holding | maintenance part 200 have arisen, the pressure vessel 261 can absorb the difference. At this time, the inside of the pressure vessel 261 is pressurized by the fluid and can be pressed uniformly. Furthermore, the planar shape of the pressure vessel 261 is the same as the planar shape of the wafer to be processed W and the support wafer S, and the diameter of the pressure vessel 261 is the same as the diameter of the wafer to be processed W, for example, 300 mm. Does not occur. Therefore, regardless of the parallelism of the first holding unit 200 and the second holding unit 201, the pressure vessel 261 presses the second holding unit 201 (the processing target wafer W and the support wafer S) uniformly in the surface. Can do. Adjustment of the pressure when pressing the second holding unit 201 is performed by adjusting the pressure of the compressed air supplied to the pressure vessel 261. Note that the support plate 264 is preferably formed of a member having a strength that does not deform even when a reaction force of a load applied to the second holding unit 201 is received by the pressure mechanism 260.

  Between the 1st holding | maintenance part 200 and the 2nd holding | maintenance part 201, the 1st imaging part 270 which images the surface of the to-be-processed wafer W hold | maintained at the 1st holding | maintenance part 200, and 2nd holding | maintenance A second imaging unit 271 that images the surface of the support wafer S held by the unit 201 is provided. For example, a wide-angle CCD camera is used for each of the first imaging unit 270 and the second imaging unit 271. Further, the first imaging unit 270 and the second imaging unit 271 are configured to be movable in the vertical direction and the horizontal direction by a moving mechanism (not shown).

  The joint 113 has a processing container 280 that can be sealed inside. The processing container 280 accommodates the first holding unit 200, the second holding unit 201, the support plate 250, the pressure vessel 261, the support plate 264, the first imaging unit 270, and the second imaging unit 271 described above. To do.

  The processing container 280 includes a lower chamber 281 that supports the first holding unit 200 and an upper chamber 282 that supports the second holding unit 201. The upper chamber 282 is configured to be vertically movable by an elevating mechanism (not shown) such as an air cylinder. A sealing material 283 for maintaining the airtightness of the inside of the processing container 280 is provided on the joint surface of the lower chamber 281 with the upper chamber 282. For the sealing material 283, for example, an O-ring is used. Then, by bringing the lower chamber 281 and the upper chamber 282 into contact with each other as shown in FIG. 21, the inside of the processing container 280 is formed in a sealed space.

  Around the upper chamber 282, as shown in FIG. 22, a plurality of, for example, five moving mechanisms 290 for moving the second holding unit 201 in the horizontal direction via the upper chamber 282 are provided. Of the five moving mechanisms 290, four moving mechanisms 290 are used for moving the second holding unit 201 in the horizontal direction, and one moving mechanism 290 is around the vertical axis (θ direction) of the second holding unit 201. Used for rotation. As shown in FIG. 20, the moving mechanism 290 has a cam 291 that contacts the upper chamber 282 to move the second holding unit 201 and a cam 291 that rotates the cam 291 via the shaft 292, for example, a motor (not shown). And a built-in rotation drive unit 293. The cam 291 is provided eccentrically with respect to the central axis of the shaft 292. Then, by rotating the cam 291 by the rotation driving unit 293, the center position of the cam 291 with respect to the second holding unit 201 moves, and the second holding unit 201 can be moved in the horizontal direction.

  The lower chamber 281 is provided with a decompression mechanism 300 that decompresses the atmosphere in the processing container 280. The decompression mechanism 300 includes an intake pipe 301 for sucking the atmosphere in the processing container 280 and a negative pressure generator 302 such as a vacuum pump connected to the intake pipe 301.

  In addition, since the structure of the joining apparatuses 31-33 is the same as that of the structure of the joining apparatus 30 mentioned above, description is abbreviate | omitted.

  Next, the configuration of the coating apparatus 40 described above will be described. As shown in FIG. 23, the coating apparatus 40 has a processing container 310 that can be sealed inside. A loading / unloading port (not shown) for the wafer W to be processed is formed on the side surface of the processing container 310 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

  A spin chuck 320 that holds and rotates the wafer W to be processed is provided at the center of the processing container 310. The spin chuck 320 has a horizontal upper surface, and a suction port (not shown) for sucking the processing target wafer W is provided on the upper surface, for example. The wafer W to be processed can be sucked and held on the spin chuck 320 by suction from the suction port.

  Below the spin chuck 320, a chuck driving unit 321 including, for example, a motor is provided. The spin chuck 320 can be rotated at a predetermined speed by the chuck driving unit 321. In addition, the chuck driving unit 321 is provided with an elevating drive source such as a cylinder, and the spin chuck 320 can be moved up and down.

  Around the spin chuck 320, there is provided a cup 322 that receives and collects the liquid scattered or dropped from the wafer W to be processed. Connected to the lower surface of the cup 322 are a discharge pipe 323 for discharging the collected liquid and an exhaust pipe 324 for evacuating and exhausting the atmosphere in the cup 322.

  As shown in FIG. 24, a rail 330 extending along the Y direction (left and right direction in FIG. 24) is formed on the side of the cup 322 in the negative X direction (downward direction in FIG. 24). For example, the rail 330 is formed from the outer side of the cup 322 on the Y direction negative direction (left direction in FIG. 24) to the outer side of the Y direction positive direction (right direction in FIG. 24). An arm 331 is attached to the rail 330.

  As shown in FIGS. 23 and 24, the arm 331 supports an adhesive nozzle 332 for supplying a liquid adhesive G to the wafer W to be processed. The arm 331 is movable on the rail 330 by a nozzle driving unit 333 shown in FIG. As a result, the adhesive nozzle 332 can move from the standby portion 334 installed on the outer side of the Y direction positive side of the cup 322 to the upper part of the center of the wafer W to be processed in the cup 322, and further, the wafer W to be processed It can move in the radial direction of the wafer W to be processed. The arm 331 can be moved up and down by a nozzle driving unit 333 and the height of the adhesive nozzle 332 can be adjusted.

  As shown in FIG. 23, a supply pipe 335 that supplies the adhesive G to the adhesive nozzle 332 is connected to the adhesive nozzle 332. The supply pipe 335 communicates with an adhesive supply source 336 that stores the adhesive G therein. The supply pipe 335 is provided with a supply device group 337 including a valve that controls the flow of the adhesive G, a flow rate adjusting unit, and the like.

Note that a back rinse nozzle (not shown) for injecting the cleaning liquid toward the back surface of the processing target wafer W, that is, the non-bonded surface W _N may be provided below the spin chuck 320. The non-bonded surface W _N of the wafer to be processed W and the outer peripheral portion of the wafer to be processed W are cleaned by the cleaning liquid sprayed from the back rinse nozzle.

  Next, the structure of the heat processing apparatus 41-46 mentioned above is demonstrated. As shown in FIG. 25, the heat treatment apparatus 41 has a processing container 340 whose inside can be closed. A loading / unloading port (not shown) for the wafer W to be processed is formed on the side surface of the processing container 340 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

  A gas supply port 341 for supplying an inert gas such as nitrogen gas is formed inside the processing container 340 on the ceiling surface of the processing container 340. A gas supply pipe 343 communicating with the gas supply source 342 is connected to the gas supply port 341. The gas supply pipe 343 is provided with a supply device group 344 including a valve for controlling the flow of the inert gas, a flow rate adjusting unit, and the like.

  An air inlet 345 for sucking the atmosphere inside the processing container 340 is formed on the bottom surface of the processing container 340. An intake pipe 347 that communicates with a negative pressure generator 346 such as a vacuum pump is connected to the intake port 345.

  Inside the processing container 340, a heating unit 350 that heat-processes the processing target wafer W and a temperature control unit 351 that controls the temperature of the processing target wafer W are provided. The heating unit 350 and the temperature adjustment unit 351 are arranged side by side in the Y direction.

  The heating unit 350 includes an annular holding member 361 that houses the hot plate 360 and holds the outer peripheral portion of the hot plate 360, and a substantially cylindrical support ring 362 that surrounds the outer periphery of the holding member 361. The hot plate 360 has a thick and substantially disk shape, and can place and heat the wafer W to be processed. Further, the heating plate 360 incorporates a heating mechanism 363, for example. For the heating mechanism 363, for example, a heater is used. The heating temperature of the hot plate 360 is controlled by the control unit 400, for example, and the wafer W to be processed placed on the hot plate 360 is heated to a predetermined temperature.

  Below the heat plate 360, for example, three elevating pins 370 for supporting the wafer W to be processed from below and elevating it are provided. The elevating pin 370 can be moved up and down by an elevating drive unit 371. Near the center of the hot plate 360, through holes 372 that penetrate the hot plate 360 in the thickness direction are formed, for example, at three locations. The elevating pin 370 is inserted through the through hole 372 and can protrude from the upper surface of the hot plate 360.

  The temperature adjustment unit 351 has a temperature adjustment plate 380. As shown in FIG. 26, the temperature adjustment plate 380 has a substantially rectangular flat plate shape, and the end surface on the heat plate 360 side is curved in an arc shape. In the temperature adjusting plate 380, two slits 381 along the Y direction are formed. The slit 381 is formed from the end surface of the temperature adjustment plate 380 on the heat plate 360 side to the vicinity of the center of the temperature adjustment plate 380. The slit 381 can prevent the temperature adjustment plate 380 from interfering with the elevation pins 370 of the heating unit 350 and the elevation pins 390 of the temperature adjustment unit 351 described later. The temperature adjustment plate 380 includes a temperature adjustment member (not shown) such as a Peltier element. The cooling temperature of the temperature adjustment plate 380 is controlled by, for example, the control unit 400, and the processing target wafer W placed on the temperature adjustment plate 380 is cooled to a predetermined temperature.

  The temperature adjustment plate 380 is supported by the support arm 382 as shown in FIG. A drive unit 383 is attached to the support arm 382. The drive unit 383 is attached to a rail 384 extending in the Y direction. The rail 384 extends from the temperature adjustment unit 351 to the heating unit 350. With this drive unit 383, the temperature adjustment plate 380 can move between the heating unit 350 and the temperature adjustment unit 351 along the rail 384.

  Below the temperature adjustment plate 380, for example, three elevating pins 390 for supporting the wafer W to be processed from below and elevating it are provided. The elevating pin 390 can be moved up and down by an elevating drive unit 391. The elevating pin 390 is inserted through the slit 381 and can protrude from the upper surface of the temperature adjustment plate 380.

  In addition, since the structure of the heat processing apparatuses 42-46 is the same as that of the heat processing apparatus 41 mentioned above, description is abbreviate | omitted.

  Moreover, in the heat treatment apparatuses 41 to 46, the temperature of the superposed wafer T can also be adjusted. Further, in order to adjust the temperature of the superposed wafer T, a temperature adjusting device (not shown) may be provided. The temperature control device has the same configuration as the heat treatment device 41 described above, and a temperature control plate is used instead of the hot plate 360. A cooling member such as a Peltier element is provided inside the temperature adjustment plate, and the temperature adjustment plate can be adjusted to a set temperature.

  The above joining system 1 is provided with a control unit 400 as shown in FIG. The control unit 400 is a computer, for example, and has a program storage unit (not shown). The program storage unit stores a program for controlling processing of the processing target wafer W, the supporting wafer S, and the overlapped wafer T in the bonding system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize the below-described joining process in the joining system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 400 from the storage medium H.

  As will be described later, the processing target wafer W and the support wafer S are heated by the heating mechanisms 211 and 241 and then cooled at different temperatures by the cooling mechanisms 212 and 242, respectively. Further, as will be described later, the wafer W to be processed before bonding has a warped center portion that protrudes from the peripheral portion. Then, the control unit 400 sets the first cooling temperature of the wafer W to be processed by the first cooling mechanism 212, the second cooling temperature of the support wafer S by the second cooling mechanism 242, and the warpage amount of the wafer W to be processed. Have a correlation (database). This correlation is derived in advance by actually changing the amount of warpage of the wafer W to be processed and changing the first cooling temperature of the first cooling mechanism 212 and the cooling temperature of the second cooling mechanism 242.

  Next, a method for joining the processing target wafer W and the supporting wafer S performed using the joining system 1 configured as described above will be described. FIG. 27 is a flowchart showing an example of main steps of the joining process.

  In the present embodiment, as shown in FIG. 28, the wafer W to be processed before being transferred to the bonding system 1, that is, the wafer W to be processed before bonding, has a first holding portion at the center portion thereof compared to the peripheral portion. It protrudes and warps to the 200 side. The warpage amount δ of the wafer W to be processed is known in advance and is, for example, 300 μm in the present embodiment.

First, a cassette C _W housing a plurality of the processed the wafer _W, the cassette C _S accommodating a plurality of support wafer _S, and an empty cassette C _T is a predetermined cassette mounting plate 11 of the carry-out station 2 Placed. Thereafter, the wafer _W to be processed in the cassette CW is taken out by the wafer transfer device 22 and transferred to the transition device 50 of the third processing block G3 of the processing station 3. At this time, the wafer W to be processed is transported with its non-bonding surface W _N facing downward.

Next, the wafer W to be processed is transferred to the coating device 40 by the wafer transfer device 61. The wafer W to be processed loaded into the coating device 40 is transferred from the wafer transfer device 61 to the spin chuck 320 and held by suction. At this time, the non-bonding surface W _N of the wafer W is held by suction.

Subsequently, the adhesive nozzle 332 of the standby unit 334 is moved above the central portion of the wafer W to be processed by the arm 331. Thereafter, while rotating the wafer W by the spin chuck 320, and supplies the adhesive G from the adhesive nozzles 332 on the bonding surface W _J of wafer W. Supplied adhesive G is diffused into the entire surface of the bonding surface W _J of wafer W by the centrifugal force, the adhesive G on the bonding surface W _J of the wafer W is applied (step of FIG. 27 A1 ).

  Next, the wafer W to be processed is transferred to the heat treatment apparatus 41 by the wafer transfer apparatus 61. At this time, the inside of the heat treatment apparatus 41 is maintained in an inert gas atmosphere. When the wafer W to be processed is loaded into the heat treatment apparatus 41, the superposed wafer T is transferred from the wafer transfer apparatus 61 to the lift pins 390 that have been lifted and waited in advance. Subsequently, the elevating pins 390 are lowered, and the processing target wafer W is placed on the temperature adjustment plate 380.

  Thereafter, the temperature adjustment plate 380 is moved along the rail 384 to the upper side of the heat plate 360 by the driving unit 383, and the wafer W to be processed is transferred to the lift pins 370 that have been lifted and waited in advance. Thereafter, the elevating pins 370 are lowered, and the wafer W to be processed is placed on the hot plate 360. And the to-be-processed wafer W on the hot platen 360 is heated to predetermined temperature, for example, 320 degreeC (process A2 of FIG. 27). By performing the heating by the hot plate 360, the adhesive G on the processing target wafer W is heated and the adhesive G is cured.

  Thereafter, the elevating pins 370 are raised, and the temperature adjusting plate 380 is moved above the hot plate 360. Subsequently, the wafer W to be processed is transferred from the lift pins 370 to the temperature adjustment plate 380, and the temperature adjustment plate 380 moves to the wafer transfer region 60 side. During the movement of the temperature adjusting plate 380, the temperature of the processing target wafer W is adjusted to a predetermined temperature, for example, 23 ° C., which is normal temperature.

  The wafer W to be processed that has been heat-treated by the heat treatment apparatus 41 is transferred to the bonding apparatus 30 by the wafer transfer apparatus 61. The wafer W to be processed transferred to the bonding apparatus 30 is transferred from the wafer transfer apparatus 61 to the transfer arm 120 of the transfer unit 110 and then transferred from the transfer arm 120 to the wafer support pins 121. Thereafter, the wafer W to be processed is transferred from the wafer support pins 121 to the reversing unit 111 by the first transfer arm 170 of the transfer unit 112.

  The wafer to be processed W transferred to the reversing unit 111 is held by the holding member 151 and moved to the position adjusting mechanism 160. Then, the position adjusting mechanism 160 adjusts the position of the notch portion of the processing target wafer W to adjust the horizontal direction of the processing target wafer W (step A3 in FIG. 27).

Thereafter, the wafer W to be processed is transferred from the reversing unit 111 to the bonding unit 113 by the first transfer arm 170 of the transfer unit 112. At this time, the upper chamber 282 is located above the lower chamber 281, the upper chamber 282 and the lower chamber 281 are not in contact with each other, and the inside of the processing container 280 is not formed in a sealed space. The to-be-processed wafer W conveyed to the junction part 113 is mounted in the 1st holding | maintenance part 200 (process A4 of FIG. 27). On the first holding portion 200, a state where the bonding surface W _J of wafer W is facing upward, i.e. wafer W in a state where the adhesive G is facing upward is held by suction. As shown in FIG. 28, the central portion of the wafer W to be processed before bonding protrudes from the peripheral portion. That is, the wafer W to be processed held by the first holding unit 200 is warped so that the center part protrudes toward the first holding part 200 compared to the peripheral part. The wafer W to be processed is actually held flat on the first holding unit 200 by the electrostatic force of the first holding unit 200.

  While the processes A1 to A4 described above are performed on the processing target wafer W, the supporting wafer S is processed following the processing target wafer W. The support wafer S is transferred to the bonding apparatus 30 by the wafer transfer device 61. In addition, about the process in which the support wafer S is conveyed to the joining apparatus 30, since it is the same as that of the said embodiment, description is abbreviate | omitted.

  The support wafer S transferred to the bonding apparatus 30 is transferred from the wafer transfer apparatus 61 to the transfer arm 120 of the transfer unit 110 and then transferred from the transfer arm 120 to the wafer support pins 121. Thereafter, the support wafer S is transferred from the wafer support pins 121 to the reversing unit 111 by the first transfer arm 170 of the transfer unit 112.

The support wafer S transferred to the reversing unit 111 is held by the holding member 151 and moved to the position adjusting mechanism 160. Then, the position adjustment mechanism 160 adjusts the position of the notch portion of the support wafer S to adjust the horizontal direction of the support wafer S (step A5 in FIG. 27). The support wafer S whose horizontal direction has been adjusted is moved in the horizontal direction from the position adjustment mechanism 160 and moved upward in the vertical direction, and then the front and back surfaces thereof are reversed (step A6 in FIG. 27). That is, the bonding surface S _J of the support wafer S is directed downward.

Thereafter, the support wafer S is moved downward in the vertical direction, and then transferred from the reversing unit 111 to the bonding unit 113 by the second transfer arm 171 of the transfer unit 112. In this case, second transfer arm 171, since it holds only the outer peripheral portion of the joint surface S _J of the support wafer S, for example, that the joint surface S _J is soiled by particles or the like adhering to the second transfer arm 171 There is no. The support wafer S transferred to the bonding unit 113 is sucked and held by the second holding unit 201 (step A7 in FIG. 27). In the second holding portion 201, the supporting wafer S is held in a state where the bonding surfaces S _J is directed downward of the support wafer S.

Thus, when the to-be-processed wafer W and the support wafer S are conveyed to the junction part 113, the to-be-processed wafer W and the support wafer S will be joined. FIG. 29 shows time-series changes in the temperature of the wafer W to be processed and the temperature of the support wafer S in the bonding process at the bonding portion 113. In FIG. 29, the alternate long and short dash line indicates the temperature change of the wafer W to be processed, and the alternate long and two short dashes line indicates the temperature change of the support wafer S. The time wafer W in step A4 is held by the first holding portion 200 is the time t ₁ in FIG. 29, the time support wafer S in step A7 is held in the second holding portion 201 the time _{t 2} in FIG. 29. The temperature of the support wafer S and wafer W at time _t 1, _{t 2} are each temperatures _{T 1,} temperatures _{T 1} is 23 ° C. is cold for example. Further, the wafer W to be processed is waiting on the first holding unit 200 between the time t ₁ and the time t _2, and the wafer W to be processed is heated by the first heating mechanism 211.

  In the bonding unit 113, first, horizontal position adjustment between the wafer to be processed W held by the first holding unit 200 and the support wafer S held by the second holding unit 201 is performed. A plurality of predetermined reference points, for example, four or more reference points, are formed on the surface of the wafer W to be processed and the surface of the support wafer S. Then, the first imaging unit 270 is moved in the horizontal direction, and the surface of the processing target wafer W is imaged. Further, the second imaging unit 271 is moved in the horizontal direction, and the surface of the support wafer S is imaged. Thereafter, the position of the reference point of the processing target wafer W displayed in the image captured by the first imaging unit 270 and the position of the reference point of the support wafer S displayed in the image captured by the second imaging unit 271 The horizontal position (including the horizontal direction) of the support wafer S is adjusted by the moving mechanism 290 so that the two match. In other words, the cam 291 is rotated by the rotation driving unit 293 to move the second holding unit 201 in the horizontal direction via the upper chamber 282, and the horizontal position of the support wafer S is adjusted. Thus, the horizontal position of the wafer to be processed W and the support wafer S is adjusted (step A8 in FIG. 27).

  Thereafter, after the first imaging unit 270 and the second imaging unit 271 are withdrawn from between the first holding unit 200 and the second holding unit 201, the upper chamber 282 is moved by a moving mechanism (not shown). Lower. Then, the upper chamber 282 and the lower chamber 281 are brought into contact with each other, and the inside of the processing container 280 constituted by the upper chamber 282 and the lower chamber 281 is formed in a sealed space. At this time, a minute gap is formed between the processing target wafer W held by the first holding unit 200 and the support wafer S held by the second holding unit 201. That is, the wafer W to be processed and the support wafer S are not in contact with each other.

  Thereafter, the decompression mechanism 300 sucks the atmosphere in the processing container 280 and decompresses the processing container 280 to a vacuum state (step A9 in FIG. 27). In the present embodiment, the inside of the processing container 280 is depressurized to a predetermined vacuum pressure, for example, 10.0 Pa or less.

  Thereafter, as shown in FIG. 30, compressed air is supplied to the pressure vessel 261, and the pressure vessel 261 is brought to a predetermined pressure, for example, 1.00001 MPa. Here, the inside of the processing container 280 is maintained in a vacuum state, and the pressure container 261 is disposed in a vacuum atmosphere in the processing container 280. For this reason, the pressure pressed downward by the pressurizing mechanism 260, that is, the pressure transmitted from the pressure vessel 261 to the second holding unit 201 is a differential pressure between the pressure in the pressure vessel 261 and the pressure in the processing vessel 280. 1.0 MPa. That is, the pressure for pressing the second holding unit 201 by the pressurizing mechanism 260 is smaller than a predetermined vacuum pressure. Then, the second holding unit 201 is pressed downward by the pressurizing mechanism 260, and the entire surface of the wafer W to be processed and the entire surface of the support wafer S come into contact with each other. When the wafer to be processed W and the support wafer S come into contact with each other, the wafer to be processed W and the support wafer S are sucked and held by the first holding unit 200 and the second holding unit 201, respectively. The positional deviation of the wafer S does not occur. Further, since the planar shape of the pressure vessel 261 is the same as the planar shape of the processing target wafer W and the supporting wafer S, the pressurizing mechanism 260 presses the processing target wafer W and the supporting wafer S over the entire surface. In step A10, since the inside of the processing container 280 is maintained in a vacuum state, even if the wafer to be processed W and the support wafer S are brought into contact with each other, voids between the wafer to be processed W and the support wafer S are formed. Occurrence can be suppressed. In the present embodiment, the second holding unit 201 is pressed at 1.0 MPa by the pressurizing mechanism 260. The pressure at the time of pressing is the type of the adhesive G or the type of device on the wafer W to be processed. It is set according to etc.

Thus when pressing the support wafer S and wafer W by the pressing mechanism 260, temperature _{T 2} of the support wafer S and wafer W given by the heating mechanism 211,241 is heated, for example, 340 ° C.. The temperature _{T 2,} the melting point temperature _{T 3} which solidified adhesive G is softened, for example, higher than 320 ° C.. Therefore, the to-be-processed wafer W and the support wafer S are pressed and firmly bonded by the pressure mechanism 260 in a state where the adhesive G is softened (step A10 in FIG. 27). In addition, the to-be-processed wafer W and the support wafer S reach the temperature T ₂ described above at different times t ₃ and t ₄ .

Thereafter, at a time t ₅ to a predetermined time elapses, it starts each cooling of wafer W and the supporting wafer S by the first cooling mechanism 212 and the second cooling mechanism 242. The processed wafer W and the support wafer S are cooled at different temperatures by the first cooling mechanism 212 and the second cooling mechanism 242, respectively. At time t ₆ , the wafer W to be processed is cooled at a first cooling temperature T ₃ , for example, 320 ° C., and the support wafer S is cooled to a second cooling temperature T ₄ , for example, 310 that is lower than the first cooling temperature T _3. Cool at 0C. First cooling temperature T ₃ is the temperature softened adhesive G is solidified. Thus at time t _6, the adhesive G is solidified wafer W and the supporting wafer S is bonded (step A11 in FIG. 27). The supporting wafer S and wafer W is cooled to a temperature T ₁ of a further normal temperature. The processed wafer W and the support wafer S reach the temperature T ₁ at different times t ₇ and t ₈ , respectively. In the cooling process of the wafer to be processed W and the support wafer S, the pressing of the wafer to be processed W and the support wafer S by the pressurizing mechanism 260 is continuously performed. However, the pressing by the pressurizing mechanism 260 may be stopped together with the end of the above-described step A10 according to the bonding condition between the processing target wafer W and the supporting wafer S.

First cooling temperature _{T 3} and the second cooling temperature _{T 4} in the step A11, the first cooling temperature _{T 3} and the second wafer W by the first cooling mechanism 212 stored in the control unit 400 Is set based on the correlation between the second cooling temperature T ₄ of the support wafer S by the cooling mechanism 242 and the warpage amount δ of the wafer W to be processed. In the present embodiment, since the warpage amount δ of the wafer W to be processed is 300 μm, 320 ° C. of the first cooling temperature T ₃ and 310 ° C. of the second cooling temperature T ₄ are set from the above correlation. As another embodiment, for example, when the warpage amount δ of the wafer W to be processed before bonding is 600 μm, the temperature difference between the first cooling temperature T ₃ and the second cooling temperature T ₄ is 20 ° C. a first cooling temperature T ₃ second cooling temperature T ₄ is set.

  Here, as shown in FIG. 28, since the wafer W to be processed is warped before bonding, if the wafer W to be processed and the support wafer S are cooled at the same cooling temperature, the wafer before bonding is bonded as shown in FIG. The superposed wafer T after bonding warps following the warpage of the wafer W to be processed.

In this regard, in step A11 of this embodiment, and the second cooling temperature T ₄ lower than the first cooling temperature T _3. Then, the thermal expansion amount of the processing target wafer W can be made larger than the thermal expansion amount of the support wafer S. Then, the adhesive G is solidified in a state where the thermal expansion amount of the processing target wafer W is increased. Thereafter, for example, when the wafer to be processed W and the support wafer S are cooled to a temperature T ₁ that is room temperature, the shrinkage amounts of the wafer to be processed W and the support wafer S are different. T ₃ and warpage is generated according to the temperature difference between the second cooling temperature T _4. As a result, even when the wafer to be processed W before bonding is warped as shown in FIG. 28, the first cooling temperature T ₃ of the wafer to be processed W and the second cooling temperature T ₄ of the support base wafer S are processed. By adjusting, the overlapped wafer T can be warped in a direction to suppress warpage of the wafer W to be processed, and as a result, the overlapped wafer T can be joined flatly as shown in FIG.

  The overlapped wafer T in which the wafer to be processed W and the support wafer S are bonded in this way is transferred from the bonding unit 110 to the delivery unit 110 by the first transfer arm 170 of the transfer unit 112. The overlapped wafer T transferred to the transfer unit 110 is transferred to the transfer arm 120 via the wafer support pins 121, and further transferred from the transfer arm 120 to the wafer transfer device 61.

Thereafter bonded wafer T is transferred to the transition unit 51 by the wafer transfer apparatus 61, as by the wafer transfer apparatus 22 of the subsequent unloading station 2 is transported to the cassette C _T of predetermined cassette mounting plate 11. In this way, a series of bonding processing of the processing target wafer W and the supporting wafer S is completed.

According to the above embodiment, after heating the support wafer S and wafer W at temperature T ₂ in step A10, at step A11 the wafer W to support wafer S and the first cooling temperature T _3, respectively since cooling by the second cooling temperature T _4, it may be greater than the thermal expansion amount of support wafer S thermal expansion amount of the target wafer W. Thereafter, for example, when the wafer W to be processed and the support wafer S are cooled to a temperature T ₁ that is room temperature, the bonded superposed wafer T corresponds to the temperature difference between the first cooling temperature T ₃ and the second cooling temperature T ₄ . Since warpage occurs, the overlapped wafer T can be warped in a direction to suppress warpage of the wafer W to be processed, and as a result, the overlapped wafer T can be joined flatly. Therefore, according to this Embodiment, the to-be-processed wafer W and the support wafer S can be joined appropriately, and the subsequent superposition | polymerization wafer T can be conveyed and processed appropriately.

  Further, in step A11, the processing target wafer W and the support wafer T are positively cooled by the first cooling mechanism 212 and the second cooling mechanism 242, respectively, so that the cooling can be performed uniformly within the wafer surface. . From this point of view, the superposed wafer T is not distorted or warped.

Further, in step A10, while heating the support wafer S and wafer W at a predetermined temperature T ₂ by the heating mechanism 211,241, so to press the supporting wafer S and wafer W by the pressure mechanism 260, to be processed The wafer W and the support wafer S can be firmly adhered. Therefore, the wafer W to be processed and the support wafer S can be bonded more appropriately.

The control unit 400 also includes a first cooling temperature T ₃ of the wafer W to be processed by the first cooling mechanism 212, a second cooling temperature T ₄ of the support wafer S by the second cooling mechanism 242, and the wafer W to be processed. Therefore, the first cooling temperature T ₃ and the second cooling temperature T ₄ are set based on the warpage amount δ of the wafer W to be processed, which is known in advance. . Therefore, the first cooling temperature T ₃ and the second cooling temperature T ₄ can be automatically set appropriately, and the first cooling mechanism 212 and the second cooling mechanism 242 can be appropriately controlled.

  Further, since the bonding system 1 includes the bonding devices 30 to 31, the coating device 40, and the heat treatment devices 41 to 46, the processing target wafers W are sequentially processed to apply the adhesive G to the processing target wafers W. While heating to predetermined temperature, in the joining apparatus 30, the front and back of the support wafer S are reversed. Thereafter, in the bonding apparatus 30, the wafer W to be processed which has been applied with the adhesive G and heated to a predetermined temperature is bonded to the support wafer S whose front and back surfaces are reversed. As described above, according to the present embodiment, the processing target wafer W and the supporting wafer S can be processed in parallel. In addition, while the wafer to be processed W and the support wafer S are bonded in the bonding apparatus 30, another wafer to be processed W and the support wafer S can be processed in the coating apparatus 40, the heat treatment apparatus 41, and the bonding apparatus 30. Therefore, the wafer W to be processed and the support wafer S can be bonded efficiently, and the throughput of the bonding process can be improved.

  In the above embodiment, as shown in FIG. 28, the wafer W to be processed before bonding is warped so that the center portion protrudes toward the first holding portion 200 as compared with the peripheral portion. As shown, the wafer W to be processed may be warped with its central portion protruding toward the second holding portion 201 as compared with the peripheral portion.

  In such a case, in step A <b> 11, the first cooling temperature of the processing target wafer W by the first cooling mechanism 212 is set lower than the cooling temperature of the processing target wafer W by the second cooling mechanism 242. Then, the thermal expansion amount of the processing target wafer W can be made smaller than the thermal expansion amount of the support wafer S. Then, the adhesive G is solidified in a state where the thermal expansion amount of the processing target wafer W is reduced. Thereafter, for example, when the wafer to be processed W and the support wafer S are cooled to room temperature, the shrinkage amount of the wafer to be processed W and the support wafer S is different, so the first cooling temperature and the second cooling are performed on the bonded superposed wafer T. Warpage occurs according to the temperature difference. If it does so, even if the to-be-processed wafer W before a curvature has generate | occur | produced, the superposition | polymerization wafer T can be warped in the direction which suppresses the curvature of the said to-be-processed wafer W, As a result, the superposition | polymerization wafer T is joined flatly. be able to.

  Note that whether the first cooling temperature or the second cooling temperature is lowered depends on whether the central portion of the wafer W to be processed protrudes toward the first holding portion 200 as compared with the peripheral portion, or the second cooling temperature. It depends on whether it protrudes to the holding part 201 side. That is, since the thermal expansion amount of the wafer on the high temperature side becomes large, when the center portion of the wafer W to be processed protrudes toward the second holding portion 201 as compared with the peripheral portion, the first cooling temperature is set to the second cooling temperature. What is necessary is just to make it lower than the cooling temperature. On the other hand, when the central portion of the wafer W to be processed protrudes toward the first holding portion 200 as compared with the peripheral portion, the second cooling temperature may be set lower than the first cooling temperature.

In the above-described embodiment, the wafer to be processed W and the support wafer S are bonded in a state where the wafer to be processed W is disposed on the lower side and the support wafer S is disposed on the upper side. The support wafer S may be disposed upside down. At this time, the first holding unit 200 may support the support wafer S, and the second holding unit 201 may support the processing target wafer W. In such a case, the first holding unit 200 and the second holding unit are supported. 201 correspond to the second holding unit and the first holding unit of the present invention, respectively. Then, a step A1~A4 described above relative to the support wafer S, applying an adhesive agent G on the bonding surface S _J of the support wafer S. Further, the above-described steps A5 to A7 are performed on the processing target wafer W, and the front and back surfaces of the processing target wafer W are reversed. And the process A8-A11 mentioned above is performed, and the to-be-processed wafer W and the support wafer S are joined.

In addition the above embodiment, although the adhesive has been applied onto G on the bonding surface W _J of the processing the wafer W, Good be coated with adhesive G on the bonding surface S _J of the support wafer S, or be processed the adhesive G on both the bonding surfaces S _J of the joint surface W _J and support wafer S of the wafer W may be subjected coated.

  In the bonding system 1 of the above embodiment, as shown in FIG. 33, a warpage measuring apparatus 500 that measures the amount of warpage of the wafer W to be processed before bonding may be further provided. The warpage measuring apparatus 500 is disposed, for example, in the uppermost layer of the third processing block G3.

  The warpage measuring apparatus 500 includes a processing container 510 as shown in FIG. A loading / unloading port (not shown) for the wafer W to be processed is formed on the side surface of the processing container 510 on the wafer transfer region 60 side, and an opening / closing shutter (not shown) is provided at the loading / unloading port.

  In the central portion of the processing container 510, a mounting table 520 for mounting the processing target wafer W is provided. The mounting table 520 is horizontally installed, for example, by a mounting table support 521 fixed to the side wall 510a of the processing container 510. A plurality of support pins 522 that support the wafer W to be processed are provided on the mounting surface of the mounting table 520. Below the mounting table 520, a plurality of lifting pins 523 that pass through the mounting table 520 and can be moved up and down are provided. The elevating pin 523 is provided with a drive mechanism 525 via a bracket 524, and the elevating pin 523 moves up and down by the operation of the drive mechanism 525.

  Above the mounting table 520, for example, a laser displacement meter 526 is supported by a displacement meter support portion 527. The laser displacement meter 526 can be moved along the displacement meter support 527 by a moving mechanism (not shown). The laser displacement meter 526 can measure the distance from the surface of the wafer W to be processed. Then, the measurement result of the laser displacement meter 526 is output to the measurement unit 528, and the warpage amount of the processing target wafer W is measured. The warpage amount of the processing target wafer W is output to the control unit 400.

In such a case, in the bonding system 1, first, the wafer _W to be processed in the cassette CW is taken out by the wafer transfer device 22 and transferred to the warpage measuring device 500 of the third processing block G3 of the processing station 3.

  The wafer W to be processed carried into the warp transfer device 500 is placed on the placement table 520. Then, the laser displacement meter 526 is scanned in the radial direction of the wafer W to be processed along the displacement meter support portion 527, and the distance between the laser displacement meter 526 and the wafer W to be processed is measured. The measurement result is output to the measurement unit 528, and the amount of warpage of the processing target wafer W is measured. The measured warpage amount of the processing target wafer W is output to the control unit 400.

  In the control unit 400, based on the measured warpage amount of the processing target wafer W, the above-described first cooling temperature of the processing target wafer W, the second cooling temperature of the support wafer S, and the warping amount of the processing target wafer W. From the correlation, the first cooling temperature of the processing target wafer W by the first cooling mechanism 212 and the second cooling temperature of the support wafer S by the second cooling mechanism 242 are set.

  Since the subsequent steps are the same as the steps A1 to A11 in the above embodiment, description thereof is omitted.

  According to the present embodiment, the first cooling temperature of the first cooling mechanism 212 and the second cooling mechanism 242 are based on the warpage amount of the wafer W to be processed measured by the warpage measuring apparatus 500 before bonding. The second cooling temperature can be feedforward controlled. Thus, since the cooling temperature of each to-be-processed wafer W and the support wafer S can be controlled separately, the to-be-processed wafer W and the support wafer S can be joined more appropriately.

  In the above embodiment, the setting of the first cooling temperature of the first cooling mechanism 212 and the second cooling temperature of the second cooling mechanism 242 includes the first cooling temperature, the second cooling temperature, Although set based on the correlation with the warpage amount of the processing wafer W, if the correlation is not stored in the control unit 400, a simulation is performed using a model of the processing target wafer W in which the warpage has occurred, The first cooling temperature and the second cooling temperature may be calculated.

  In the above embodiment, the processing target wafer W and the support wafer S are heated using both the first heating mechanism 211 and the second heating mechanism 241, but either one of the heating mechanisms 211 and 241 is used. The wafer to be processed W and the support wafer S may be heated by using them.

  In the above embodiment, the upper chamber 282 is raised and lowered, but the lower chamber 281 may be raised and lowered instead of raising and lowering the upper chamber 282. Alternatively, the processing container 280 may be a single processing container, and gate valves (not shown) may be provided at the loading / unloading ports of the processing target wafer W, the supporting wafer S, and the overlapped wafer T. In any case, the inside of the processing container 280 can be formed in a sealed space.

  In the above embodiment, the upper chamber 282 and the lower chamber 281 are in contact with each other, and a mechanical stopper (not shown) is provided on the inner surface or the outer surface of the upper chamber 282 and the lower chamber 281. Also good. Here, if the contact surface of the upper chamber 282 and the contact surface of the lower chamber 281 are repeatedly contacted each time the chambers 281 and 282 are opened and closed, the contact surfaces may be damaged. Therefore, when the upper chamber 282 and the lower chamber 281 are closed, a clearance between the contact surfaces of the upper chamber 282 and the lower chamber 281 is secured to such an extent that the sealing material 283 can be crushed and the inside of the processing vessel 280 can be made into a vacuum sealed space. The mechanical stopper according to the present embodiment is provided.

  In the above embodiment, the moving mechanism 290 moves the second holding unit 201 in the horizontal direction, but may move the first holding unit 200 in the horizontal direction. Alternatively, as shown in FIG. 35, a moving mechanism 290 is provided on each of the first holding unit 200 side and the second holding unit 201 side, and both the first holding unit 200 and the second holding unit 201 are moved in the horizontal direction. It may be possible.

  As shown in FIG. 35, a support member 550 that supports the second holding unit 201 may be provided on the upper surface side of the second holding unit 201 via a support plate 250. The support member 550 is configured to be extendable in the vertical direction, and functions as a micrometer, for example, and further functions as a linear shaft. Further, the support member 550 is provided, for example, at three locations outside the pressure vessel 261. Note that, when the wafer to be processed W and the support wafer S are pressed in step A10, the support member 550 expands and contracts in conjunction with the expansion and contraction of the pressure vessel 261. When the pressure vessel 261 absorbs the difference between the parallelism of the second holding unit 201 and the parallelism of the first holding unit 200, the support member 550 does not prevent this absorption.

  In the above embodiment, the first holding unit 200 may be lifted from the lower chamber 281 in order to smoothly move the first holding unit 200 in the horizontal direction by the moving mechanism 290. Various means can be used as the means for floating the first holding unit 200. For example, an air bearing or an elevating pin may be used.

  In the above embodiment, the upper chamber 282 may be provided with a maintenance window for confirming the inside of the processing container 280.

  In the above embodiment, the wafer W to be processed was heated to a predetermined temperature of 320 ° C. in the step A2, but the heat treatment of the wafer W to be processed may be performed in two stages. For example, in the heat treatment apparatus 41, after heating to a first heat treatment temperature, for example, 100 ° C. to 150 ° C., the heat treatment apparatus 44 is heated to a second heat treatment temperature, for example, 320 ° C. In such a case, the temperature of the heating mechanism itself in the heat treatment apparatus 41 and the heat treatment apparatus 44 can be made constant. Therefore, it is not necessary to adjust the temperature of the heating mechanism, and the throughput of the bonding process between the processing target wafer W and the supporting wafer S can be further improved.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

DESCRIPTION OF SYMBOLS 1 Bonding system 2 Carrying in / out station 3 Processing station 30-33 Bonding apparatus 40 Coating apparatus 41-46 Heat processing apparatus 60 Wafer conveyance area | region 113 Bonding part 200 1st holding | maintenance part 201 2nd holding | maintenance part 211 1st heating mechanism 212 1st 1 cooling mechanism 241 second heating mechanism 242 second cooling mechanism 260 pressurizing mechanism 261 pressure vessel 262 fluid supply pipe 263 fluid supply source 400 controller 500 warpage measuring device G adhesive S support wafer T superposed wafer W processed Wafer

Claims (11)

A bonding apparatus for bonding a substrate to be processed and a support substrate via an adhesive of a thermoplastic resin,
A first holding unit for holding a substrate to be processed;
A second holding unit disposed opposite to the first holding unit and holding a support substrate;
A first heating mechanism that is provided on the first holding unit side and heats the substrate to be processed;
A second heating mechanism that is provided on the second holding unit side and heats the support substrate;
A first cooling mechanism that is provided on the first holding unit side and cools the substrate to be processed;
A second cooling mechanism that is provided on the second holding unit side and cools the support substrate;
The substrate to be processed and the support substrate are heated by at least the first heating mechanism or the second heating mechanism to bring the substrate to be processed and the support substrate into close contact, and then the substrate to be processed is bonded by the first cooling mechanism. In addition to cooling to the first cooling temperature, the bonding of the substrate to be processed and the support substrate is controlled so that the support substrate is cooled by the second cooling mechanism at a second cooling temperature different from the first cooling temperature. possess and a control unit,
When the central portion of the substrate to be processed before bonding protrudes toward the second holding portion as compared with the peripheral portion and the substrate to be processed is warped, the control unit sets the first cooling temperature to the second temperature. When the temperature of the substrate to be processed is lower than the cooling temperature, and the central portion of the substrate to be processed before bonding protrudes toward the first holding portion as compared with the peripheral portion, the substrate to be processed is warped. The joining device is characterized in that the first cooling mechanism and the second cooling mechanism are controlled to be lower than the cooling temperature of 1 . A bonding apparatus for bonding a substrate to be processed and a support substrate via an adhesive of a thermoplastic resin,
A first holding unit for holding a substrate to be processed;
A second holding unit disposed opposite to the first holding unit and holding a support substrate;
A first heating mechanism that is provided on the first holding unit side and heats the substrate to be processed;
A second heating mechanism that is provided on the second holding unit side and heats the support substrate;
A first cooling mechanism that is provided on the first holding unit side and cools the substrate to be processed;
A second cooling mechanism that is provided on the second holding unit side and cools the support substrate;
The substrate to be processed and the support substrate are heated by at least the first heating mechanism or the second heating mechanism to bring the substrate to be processed and the support substrate into close contact, and then the substrate to be processed is bonded by the first cooling mechanism. In addition to cooling to the first cooling temperature, the bonding of the substrate to be processed and the support substrate is controlled so that the support substrate is cooled by the second cooling mechanism at a second cooling temperature different from the first cooling temperature. A control unit,
The control unit has a correlation between the first cooling temperature and the second cooling temperature, and a warpage amount of the substrate to be processed.
The said control part sets the said 1st cooling temperature and the said 2nd cooling temperature from the said correlation based on the curvature amount of the to-be-processed substrate before joining, The joining apparatus characterized by the above-mentioned. Wherein, based on the amount of warp of the substrate to be processed, which is measured before bonding, and sets the second cooling temperature and the first cooling temperature from the correlation to claim 2 The joining apparatus as described. A pressure vessel that is vertically extendable so as to cover the support substrate held by the second holding unit; and the fluid is allowed to flow into and out of the pressure vessel so that the second holding unit is Having a pressurizing mechanism for pressing toward the first holding unit;
The controller is configured to press and adhere the substrate to be processed and the support substrate by the pressurizing mechanism while heating the substrate to be processed and the support substrate by at least the first heating mechanism or the second heating mechanism. , and controlling the bonding of the supporting substrate and the object substrate, the bonding apparatus according to any one of claims 1-3. A joining system comprising the joining device according to any one of claims 1 to 4 ,
The bonding apparatus, a coating apparatus that applies an adhesive to a substrate to be processed or a support substrate, a heat treatment apparatus that heats the substrate to be processed or the support substrate coated with the adhesive to a predetermined temperature, the coating apparatus, A treatment station having a substrate to be processed, a support substrate, or a transfer region for transferring the substrate to be processed and the support substrate bonded to the heat treatment apparatus and the bonding apparatus;
A bonding system comprising: a loading / unloading station for loading / unloading a substrate to be processed, a support substrate, or a superposed substrate to / from the processing station. A bonding method for bonding a substrate to be processed and a support substrate via a thermoplastic resin adhesive,
After the substrate to be processed held by the first holding unit and the support substrate held by the second holding unit are arranged to face each other, the first heating mechanism provided on the first holding unit side and the second An adhesion process in which the substrate to be processed and the support substrate are heated by either one or both of the second heating mechanisms provided on the holding unit side, and the substrate to be processed and the support substrate are in close contact with each other;
Thereafter, the substrate to be processed is cooled to the first cooling temperature by the first cooling mechanism provided on the first holding unit side, and the second cooling mechanism provided on the second holding unit side. the supporting substrate is cooled by the first cooling temperature is different from the second cooling temperature, have a, a bonding step of bonding the substrate to be processed and the supporting substrate,
In the bonding step, when the central portion of the substrate to be processed before bonding protrudes toward the second holding portion compared to the peripheral portion and the substrate to be processed is warped, the first cooling temperature is set to the second cooling temperature. When the temperature of the substrate to be processed is lower than the cooling temperature, and the central portion of the substrate to be processed before bonding protrudes toward the first holding portion as compared with the peripheral portion, the substrate to be processed is warped. 1. A bonding method, wherein the temperature is lower than the cooling temperature of 1 . A bonding method for bonding a substrate to be processed and a support substrate via a thermoplastic resin adhesive,
After the substrate to be processed held by the first holding unit and the support substrate held by the second holding unit are arranged to face each other, the first heating mechanism provided on the first holding unit side and the second An adhesion process in which the substrate to be processed and the support substrate are heated by either one or both of the second heating mechanisms provided on the holding unit side, and the substrate to be processed and the support substrate are in close contact with each other;
Thereafter, the substrate to be processed is cooled to the first cooling temperature by the first cooling mechanism provided on the first holding unit side, and the second cooling mechanism provided on the second holding unit side. A cooling step of cooling the support substrate at a second cooling temperature different from the first cooling temperature, and bonding the substrate to be processed and the support substrate,
Based on the warpage amount of the substrate to be processed before bonding, the first cooling temperature and the second cooling temperature are calculated from the correlation between the first cooling temperature and the second cooling temperature and the warpage amount of the substrate to be processed. A bonding method characterized by setting a temperature. The first cooling temperature and the second cooling temperature are set from the correlation based on the measured warpage amount of the target substrate after measuring the warpage amount of the target substrate before bonding. The joining method according to claim 7 . In the adhesion step, the substrate to be processed and the support substrate are pressed and brought into close contact with the pressurizing mechanism while the substrate to be processed and the support substrate are heated by at least the first heating mechanism or the second heating mechanism. The joining method according to any one of claims 6 to 8 . A program that operates on a computer of a control unit that controls the joining apparatus in order to cause the joining apparatus to execute the joining method according to any one of claims 6 to 9 . A readable computer storage medium storing the program according to claim 10 .

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